CN104274212A - High-density electrode array based high spatial resolution ultrasonic detector - Google Patents
High-density electrode array based high spatial resolution ultrasonic detector Download PDFInfo
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- CN104274212A CN104274212A CN201410535088.7A CN201410535088A CN104274212A CN 104274212 A CN104274212 A CN 104274212A CN 201410535088 A CN201410535088 A CN 201410535088A CN 104274212 A CN104274212 A CN 104274212A
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 16
- 230000001939 inductive effect Effects 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 8
- 238000007596 consolidation process Methods 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 abstract description 7
- 238000002604 ultrasonography Methods 0.000 description 16
- 238000002591 computed tomography Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 insulation glue-line Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000002603 single-photon emission computed tomography Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4416—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to combined acquisition of different diagnostic modalities, e.g. combination of ultrasound and X-ray acquisitions
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/52—Devices using data or image processing specially adapted for radiation diagnosis
- A61B6/5211—Devices using data or image processing specially adapted for radiation diagnosis involving processing of medical diagnostic data
- A61B6/5229—Devices using data or image processing specially adapted for radiation diagnosis involving processing of medical diagnostic data combining image data of a patient, e.g. combining a functional image with an anatomical image
- A61B6/5247—Devices using data or image processing specially adapted for radiation diagnosis involving processing of medical diagnostic data combining image data of a patient, e.g. combining a functional image with an anatomical image combining images from an ionising-radiation diagnostic technique and a non-ionising radiation diagnostic technique, e.g. X-ray and ultrasound
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/52—Devices using data or image processing specially adapted for diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/5215—Devices using data or image processing specially adapted for diagnosis using ultrasonic, sonic or infrasonic waves involving processing of medical diagnostic data
- A61B8/5238—Devices using data or image processing specially adapted for diagnosis using ultrasonic, sonic or infrasonic waves involving processing of medical diagnostic data for combining image data of patient, e.g. merging several images from different acquisition modes into one image
- A61B8/5261—Devices using data or image processing specially adapted for diagnosis using ultrasonic, sonic or infrasonic waves involving processing of medical diagnostic data for combining image data of patient, e.g. merging several images from different acquisition modes into one image combining images from different diagnostic modalities, e.g. ultrasound and X-ray
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- Animal Behavior & Ethology (AREA)
- Radiology & Medical Imaging (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
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- Molecular Biology (AREA)
- Surgery (AREA)
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- Computer Vision & Pattern Recognition (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
Abstract
A high-density electrode array based high spatial resolution ultrasonic detector comprises a matching layer, an array-structured piezoelectric material chip, an insulating rubber layer, a silicon pixel chip and a chip bonding circuit board. The array-structured piezoelectric material chip is composed of a single-side electrode and small array-structured piezoelectric material units, the matching layer is attached to the single-side electrode which is grounded, and the array-structured piezoelectric material units are adhered to the silicon pixel chip through the insulating rubber layer; the silicon pixel chip is fixedly installed on the chip bonding circuit board; the detector receives ultrasonic waves which are converted into nonequivalent electrical signals on the compact small piezoelectric material units of the array-structured piezoelectric material chip through the matching layer, pixels on the silicon pixel chip sense nonequivalent electrical charge via the insulating layer, the chip bonding circuit board outputs relative analog signals or digital signals to acquire three-dimension information inside to-be-detected objects. Real-time response to the ultrasonic waves is performed by adopting the silicon pixel chip, so that imaging of the detector is high in resolution and accuracy.
Description
Technical field
The present invention relates to the detection treatment field of B ultrasonic and ultrasound computed tomography, be specifically related to a kind of high-space resolution ultrasonic detector based on high-density electrode array, can be applicable to B ultrasonic machine, imaging that ultrasound computed tomography machine realizes high-resolution and pinpoint accuracy.
Background technology
The supersonic detection device often used at present has B ultrasonic machine and ultrasound computed tomography machine, and CT detects to be had: X-ray CT, Ultrasonic CT (Ultrasonic CT), photon radiation CT(SPECT), nuclear magnetic resonance, NMR CT(MRICT); And what be most widely used in medicine CT detection technique is x-ray ct technology.
Have directivity compared with ultrasound detection detects with X-ray good, cheap, harmless, equipment such as to be easy to carry at the advantage.Therefore ultrasound wave carrys out irradiation object as the detection technique replacement ray of emission source, and produces the ultrasonic detector of high spatial resolution, one of fresh target that the researcheres becoming applications of ultrasound field are gradually pursued.But there is the problem of the lower and imaging accuracy of space exploration resolution, poor stability in existing B ultrasonic machine and ultrasound computed tomography machine, therefore be necessary to provide a kind of device, be applied in the receiving terminal of B ultrasonic and ultrasound computed tomography machines, improve ultra sonic imaging degree of accuracy and stability.
Summary of the invention
The technical problem to be solved in the present invention is, the problem of the low and imaging accuracy of space exploration resolution, poor stability is there is for existing B ultrasonic machine and ultrasound computed tomography machine, a kind of high-space resolution ultrasonic detector based on high-density electrode array is provided, be applied in the receiving terminal of B ultrasonic machine and ultrasound computed tomography machines, improve ultra sonic imaging degree of accuracy and stability.
The present invention for solving the problems of the technologies described above adopted technical scheme is:
Based on the high-space resolution ultrasonic detector of high-density electrode array, comprise matching layer, array structure thin sheets of piezoelectric material, insulation glue-line, silicon pixel chip, chip bonding circuit board; Described array structure thin sheets of piezoelectric material is made up of the piezoelectric junior unit of single-side electrode and array structure, and matching layer sticks on single-side electrode, single-side electrode ground connection, and the piezoelectric junior unit of array structure is bonding with silicon pixel chip by insulation glue-line; Silicon pixel chip is fixedly mounted on chip bonding circuit board.
By such scheme, described silicon pixel chip adopts picture element array structure, the piezoelectric junior unit of array structure thin sheets of piezoelectric material is etched into the array structure of consolidation, the pel array one_to_one corresponding with silicon pixel chip, to ensure locality (the single-side electrode ground connection of array structure thin sheets of piezoelectric material, zero potential that charge inducing produces, form electric potential difference for making between the piezoelectric junior unit of array structure and silicon pixel chip, and then produce charge inducing in the pixel of silicon pixel chip).
By such scheme, described silicon pixel chip is made up of the pel array based on CMOS integrated circuit, Pixel Dimensions is less than 200 μm, each pixel comprises top-level metallic, silicon pixel chip is for according to the signal of telecommunication on array structure thin sheets of piezoelectric material, produce charge inducing signal, charge inducing signal becomes analogue signal or digital signal to read in pixel internal conversion.
By such scheme, described array structure thin sheets of piezoelectric material and the structure adopting piezoelectric to match with electrod-array (each top-level metallic of the pel array of silicon pixel chip forms electrod-array) between silicon pixel chip.
By such scheme, described chip bonding circuit board comprises 3.3V voltage conversion circuit, 5.0V voltage conversion circuit, analog output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter; Described 3.3V voltage conversion circuit is connected with digital signal processing circuit, silicon pixel chip, digital to analog converter respectively, for providing analog power and digital power for digital signal processing circuit, silicon pixel chip, digital to analog converter; Described digital signal processing circuit is connected with silicon pixel chip, for differential digital signal is converted to single ended digital signals, for silicon pixel chip provides digital controlled signal; Described digital to analog converter is connected with silicon pixel chip, for digital signal is changed into analogue signal, for silicon pixel chip provides external reset voltage; Described 5.0V voltage conversion circuit is connected with analog output voltage drive circuit, for providing voltage for analog output voltage drive circuit; The analog output of silicon pixel chip is connected with MCX adapter through analog output voltage drive circuit, and analog output voltage drive circuit is used for providing voltage driven for the simulation of silicon pixel chip reads, the simulation of silicon pixel chip reading being exported by MCX adapter.
By such scheme, described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit adopt LM1117-3.3 chip, LM1117-5.0 chip respectively, described analog output voltage drive circuit adopts THS4281 chip, described digital to analog converter adopts DAC8568 chip, and described digital signal processing circuit adopts SN65LVDT14 chip.
Operation principle of the present invention: the high-space resolution ultrasonic detector based on high-density electrode array have employed the structure that piezoelectric combines with electrod-array, detector receives ultrasound wave, ultrasound wave passes through matching layer, the piezoelectric junior unit of the consolidation of array structure thin sheets of piezoelectric material is converted into the signal of telecommunication of inequality, through insulation glue-line, pixel in silicon pixel chip induces the electric charge of inequality, according to the response of silicon pixel chip, chip bonding circuit board exports corresponding analogue signal or digital signal, obtain the three-dimensional information of object under test inside.
Beneficial effect of the present invention: the present invention adopts harmless ultrasound wave and silicon pixel chip to hyperacoustic real-time response, be applied in the receiving terminal of B ultrasonic machine and ultrasound computed tomography machines, greatly improve ultra sonic imaging degree of accuracy, make detector image-forming have high spatial resolution and pinpoint accuracy and stability.
Accompanying drawing explanation
Fig. 1 is the structural representation based on the high-space resolution ultrasonic detector of high-density electrode array in the present invention;
Fig. 2 is the planar structure schematic diagram of array structure thin sheets of piezoelectric material;
Fig. 3 is the local side perspective view of Fig. 2 array structure thin sheets of piezoelectric material;
Fig. 4 is the structured flowchart that chip bonding circuit board of the present invention and silicon pixel chip are connected;
Fig. 5 is the example structure schematic diagram of silicon pixel chip and peripheral circuit thereof in Fig. 4;
Fig. 6 is the example structure schematic diagram of 3.3V voltage conversion circuit in Fig. 4;
Fig. 7 is the example structure schematic diagram of 5V voltage conversion circuit in Fig. 3;
Fig. 8 is the example structure schematic diagram of analog output voltage drive circuit in Fig. 4;
Fig. 9 is the structural representation of MCX adapter in Fig. 4;
Figure 10 is the example structure schematic diagram of digital to analog converter in Fig. 4;
Figure 11 is the example structure schematic diagram of digital signal processing circuit in Fig. 4;
Figure 12 is the electrical block diagram that in Fig. 4, silicon pixel chip and outside input the connector be connected;
In Fig. 1,1-matching layer, 2-array structure thin sheets of piezoelectric material, 3-insulate glue-line, 4-silicon pixel chip, 5-chip bonding circuit board.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in detail.
With reference to shown in Fig. 1, the high-space resolution ultrasonic detector based on high-density electrode array of the present invention, comprises matching layer 1, array structure thin sheets of piezoelectric material 2, insulation glue-line 3, silicon pixel chip 4, chip bonding circuit board 5; Described array structure thin sheets of piezoelectric material 2 is made up of (single-side electrode face is not by complete array) the piezoelectric junior unit of single-side electrode and array structure, matching layer 1 sticks on single-side electrode, single-side electrode ground connection, the piezoelectric junior unit of array structure is bonding with silicon pixel chip 4 by insulation glue-line 3; Silicon pixel chip 4 is fixedly mounted on chip bonding circuit board 5.
Described silicon pixel chip 4 adopts picture element array structure, and the piezoelectric junior unit of array structure thin sheets of piezoelectric material 2 is etched into the array structure of consolidation, pel array one_to_one corresponding with silicon pixel chip 4.
With reference to shown in Fig. 2 ~ Fig. 3, the square array structure that described array structure thin sheets of piezoelectric material 2 adopts 64 row * 64 to arrange, for forming relation one to one with the pel array of silicon pixel chip 4, to ensure the locality that charge inducing produces; The single-side electrode ground connection of array structure thin sheets of piezoelectric material 2, zero potential, form electric potential difference for making between the piezoelectric junior unit of array structure and silicon pixel chip 4, and then produce charge inducing in the pixel of silicon pixel chip 4.Its processing technique has following step: first by the wherein one side in the double-sided electrode of array structure thin sheets of piezoelectric material 2, removed by the method for mechanical lapping or chemical attack; On the face of removing electrode, by micro Process etching method, array structure thin sheets of piezoelectric material 2 is cut into the array structure that 64 row * 64 arrange, but will ensures that the single-side electrode face retained is still complete plane, and not cut division.
Described silicon pixel chip 4 is made up of the pel array based on CMOS integrated circuit, Pixel Dimensions is less than 200 μm, each pixel comprises top-level metallic, silicon pixel chip 4 is for according to the signal of telecommunication on array structure thin sheets of piezoelectric material 2, produce charge inducing signal, charge inducing signal becomes analogue signal or digital signal to read in pixel internal conversion.In embodiment, silicon pixel chip 4 is specially patent publication No. is the IC chip that CN102931202A openly designs.
Described array structure thin sheets of piezoelectric material 2 and the structure adopting piezoelectric to match with electrod-array (each top-level metallic of the pel array of silicon pixel chip 4 forms electrod-array) between silicon pixel chip 4.
During work, detector receives ultrasound wave, ultrasound wave is by matching layer 1, the piezoelectric junior unit of the consolidation of array structure thin sheets of piezoelectric material 2 is converted into the signal of telecommunication of inequality, through insulation glue-line 3, the pixel in silicon pixel chip 4 induces the electric charge of inequality, according to the response of silicon pixel chip 4, chip bonding circuit board 5 exports corresponding analogue signal or digital signal, obtains the three-dimensional information (the hyperacoustic precise information namely received) of object under test inside.
With reference to shown in Fig. 4 ~ Fig. 5, described chip bonding circuit board 5 comprises 3.3V voltage conversion circuit, 5.0V voltage conversion circuit, analog output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter; Described 3.3V voltage conversion circuit is connected with digital signal processing circuit, silicon pixel chip 4, digital to analog converter respectively, for providing analog power and digital power for digital signal processing circuit, silicon pixel chip, digital to analog converter; Described digital signal processing circuit is connected with silicon pixel chip 4, for differential digital signal is converted to single ended digital signals, for silicon pixel chip 4 provides digital controlled signal; Described digital to analog converter is connected with silicon pixel chip 4, for digital signal is changed into analogue signal, for silicon pixel chip 4 provides external reset voltage; Described 5.0V voltage conversion circuit is connected with analog output voltage drive circuit, for providing voltage for analog output voltage drive circuit; The analog output of silicon pixel chip 4 is connected with MCX adapter through analog output voltage drive circuit, and analog output voltage drive circuit is used for providing voltage driven for the simulation of silicon pixel chip 4 reads, the simulation of silicon pixel chip 4 reading being exported by MCX adapter.
Described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit adopt the LMS1117-3.3 chip shown in Fig. 6, the LM1117-5.0 chip shown in Fig. 7 respectively, described analog output voltage drive circuit adopts the THS4281 chip of Texas Instrument (Texas Instruments) company shown in Fig. 8, the outfan of THS4281 chip is connected with the MCX adapter shown in Fig. 9, described digital to analog converter adopts the DAC8568 chip shown in Figure 10, and described digital signal processing circuit adopts the SN65LVDT14 chip shown in Figure 11; Silicon pixel chip 4 is inputted with outside and is connected by the connector shown in Figure 12.
Described silicon pixel chip 4 is fixed on chip bonding circuit board 5 by bonding technology, chip bonding circuit board 5 drives for providing analog power, digital power, digital controlled signal, external reset voltage and analog output voltage for silicon pixel chip 4, and the MCX adapter that the simulation that silicon pixel chip 4 is changed reads on chip bonding circuit board 5 exports.
Finally should be noted that; above content is only in order to illustrate technical scheme of the present invention; but not limiting the scope of the invention; the simple modification that those of ordinary skill in the art carries out technical scheme of the present invention or equivalently to replace, does not all depart from essence and the scope of technical solution of the present invention.
Claims (6)
1. based on the high-space resolution ultrasonic detector of high-density electrode array, it is characterized in that, comprise matching layer (1), array structure thin sheets of piezoelectric material (2), insulation glue-line (3), silicon pixel chip (4), chip bonding circuit board (5); Described array structure thin sheets of piezoelectric material (2) is made up of the piezoelectric junior unit of single-side electrode and array structure, matching layer (1) sticks on single-side electrode, single-side electrode ground connection, the piezoelectric junior unit of array structure is bonding with silicon pixel chip (4) by insulation glue-line (3), and silicon pixel chip (4) is fixedly mounted on chip bonding circuit board (5).
2. the high-space resolution ultrasonic detector based on high-density electrode array according to claim 1, it is characterized in that, described silicon pixel chip (4) adopts picture element array structure, and the piezoelectric junior unit of array structure thin sheets of piezoelectric material (2) is etched into the array structure of consolidation, pel array one_to_one corresponding with silicon pixel chip (4).
3. the high-space resolution ultrasonic detector based on high-density electrode array according to claim 1, it is characterized in that, described silicon pixel chip (4) is made up of the pel array based on CMOS integrated circuit, Pixel Dimensions is less than 200 μm, each pixel comprises top-level metallic, silicon pixel chip (4), for according to the signal of telecommunication on array structure thin sheets of piezoelectric material (2), produces charge inducing signal, and charge inducing signal becomes analogue signal or digital signal to read in pixel internal conversion.
4. the high-space resolution ultrasonic detector based on high-density electrode array according to claim 1 and 2, it is characterized in that, described array structure thin sheets of piezoelectric material (2) and the structure adopting piezoelectric to match with electrod-array between silicon pixel chip (4).
5. the high-space resolution ultrasonic detector based on high-density electrode array according to claim 1, it is characterized in that, described chip bonding circuit board (5) comprises 3.3V voltage conversion circuit, 5.0V voltage conversion circuit, analog output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter; Described 3.3V voltage conversion circuit is connected with digital signal processing circuit, silicon pixel chip (4), digital to analog converter respectively; Described digital signal processing circuit is connected with silicon pixel chip (4); Described digital to analog converter is connected with silicon pixel chip (4); Described 5.0V voltage conversion circuit is connected with analog output voltage drive circuit; The analog output of silicon pixel chip (4) is connected with MCX adapter through analog output voltage drive circuit.
6. the high-space resolution ultrasonic detector based on high-density electrode array according to claim 5, it is characterized in that, described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit adopt LM1117-3.3 chip, LM1117-5.0 chip respectively, described analog output voltage drive circuit adopts THS4281 chip, described digital to analog converter adopts DAC8568 chip, and described digital signal processing circuit adopts SN65LVDT14 chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410535088.7A CN104274212B (en) | 2014-10-11 | High-space resolution ultrasonic detector based on high-density electrode array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410535088.7A CN104274212B (en) | 2014-10-11 | High-space resolution ultrasonic detector based on high-density electrode array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104274212A true CN104274212A (en) | 2015-01-14 |
| CN104274212B CN104274212B (en) | 2017-01-04 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020036270A1 (en) * | 1996-02-02 | 2002-03-28 | Tumay O. Tumer | Method and apparatus for gamma ray detection |
| US20040118991A1 (en) * | 2002-12-18 | 2004-06-24 | Richard Colbeth | Electrostatic imager |
| US20060238067A1 (en) * | 2005-03-02 | 2006-10-26 | Mcnc Research And Development Institute | Piezoelectric micromachined ultrasonic transducer with air-backed cavities |
| CN102931202A (en) * | 2012-02-21 | 2013-02-13 | 华中师范大学 | Free charge pixel detector |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020036270A1 (en) * | 1996-02-02 | 2002-03-28 | Tumay O. Tumer | Method and apparatus for gamma ray detection |
| US20040118991A1 (en) * | 2002-12-18 | 2004-06-24 | Richard Colbeth | Electrostatic imager |
| US20060238067A1 (en) * | 2005-03-02 | 2006-10-26 | Mcnc Research And Development Institute | Piezoelectric micromachined ultrasonic transducer with air-backed cavities |
| CN102931202A (en) * | 2012-02-21 | 2013-02-13 | 华中师范大学 | Free charge pixel detector |
Non-Patent Citations (1)
| Title |
|---|
| ERIKSON, K.等: "A 128×128 ultrasonic transducer hybrid array", 《ULTRASONICS SYMPOSIUM, IEEE PROCEEDINGS》 * |
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