CN104267574A

CN104267574A - Mask

Info

Publication number: CN104267574A
Application number: CN201410446667.4A
Authority: CN
Inventors: 张家祥; 郭建
Original assignee: BOE Technology Group Co Ltd; Beijing BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Beijing BOE Optoelectronics Technology Co Ltd
Priority date: 2014-09-03
Filing date: 2014-09-03
Publication date: 2015-01-07

Abstract

The invention provides a mask, which is used for solving the problem in the prior art that a contact hole of less than 4 micrometers cannot be formed because a through hole of the mask generates a diffraction effect. A phase inversion layer in the mask can be used for inverting the phase of partial light passing through the phase inversion layer, at the moment when partial light passing through a hollowed area generates the diffraction effect, the diffraction effect is counteracted by the light with the inverted phase, the diffraction effect of the hollowed area of the mask can be eliminated, the size of a graph formed by the exposure and corresponding to the hollowed area is smaller, and the preparation of a smaller pixel structure can be completed; meanwhile, the light intensity is more rapidly reduced from the center to the periphery of the hollowed area, and a slope angle of a graph formed by the exposure and corresponding to the hollowed area is larger.

Description

A kind of mask plate

Technical field

The present invention relates to display technique field, particularly, relate to a kind of mask plate.

Background technology

Current high pixel product more and more occurs, dot structure is also more and more less, and this just requires that the diameter of contact hole is also more and more less.Same also more and more less for the diameter of the via hole making the mask plate of dot structure, but the diffraction effect that can produce due to the via hole of mask plate and device-restrictive, the contact hole of below 4um cannot be made; Can only, by upgrading exposure machine, the higher exposure machine of numerical aperture (Numerical Aperture) be used to realize the lifting of resolution.But the cost upgrading an exposure machine is very expensive, makes many panel vendors face cost pressure.

Summary of the invention

The object of the invention is to solve the prior art via hole existed due to mask plate to produce diffraction effect and cause the problem of the contact hole that cannot make below 4um, a kind of mask plate can eliminating diffraction effect is provided.

The technical scheme that solution the technology of the present invention problem adopts is a kind of mask plate, comprises substrate and the phase reversing layer set gradually over the substrate, light blocking layer;

Wherein, described light blocking layer is provided with void region;

The be projected to small part of described phase reversing layer on described light blocking layer is positioned at described void region;

Light from substrate side incidence is carried out phase reversal and is used for offsetting described light produces diffraction light through void region by described phase reversing layer.

Preferably, between described phase reversing layer and described substrate, also antireflection layer is provided with; The projection of described antireflection layer on described light blocking layer covers described void region.

Preferably, the thickness range of described antireflection layer is 200-400 dust.

Preferably, the thickness range of described phase reversing layer is 400-600 dust.

Preferably, the light penetration scope of described phase reversing layer is 5-8%.

Preferably, the thickness range of described light blocking layer is 1500-2000 dust.

Preferably, described void region comprises via hole.

Preferably, the diameter range of described via hole is 1.7-2.0um.

Preferably, the distance at the edge of the projection of described phase reversing layer on described light blocking layer and the edge of described via hole is 0.5-0.8um.

Preferably, the material of described antireflection layer comprises MgF; The material of described light blocking layer comprises chromium; The material of described phase reversing layer comprises SiMo.

In mask plate of the present invention, the some light through phase reversing layer 2 can be carried out phase reversal by phase reversing layer 2, now, some light through void region produces diffraction effect, offset with the light through phase reversal, eliminate the diffraction effect of the void region of mask plate, the size of the figure of the corresponding void region that exposure is formed is less, can complete the preparation of more small pixel structure; Meanwhile, light intensity also faster from the peritropous reduction in the center of void region, the angle of gradient of the figure of the corresponding void region that exposure is formed is larger.

Accompanying drawing explanation

Fig. 1 is the structural representation of mask plate in the embodiment of the present invention 1;

Fig. 2 is that the light path of the mask plate in the embodiment of the present invention 1 with phase reversing layer and the mask plate without phase reversing layer contrasts schematic diagram;

Fig. 3 is the structural representation of the mask plate in the embodiment of the present invention 1 with antireflection layer;

Description of reference numerals:

1. substrate; 2. phase reversing layer; 3. light blocking layer; 4. antireflection layer; 5. void region.

Embodiment

For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.

Embodiment 1:

Shown in Fig. 1, the present embodiment provides a kind of mask plate, the phase reversing layer 2, the light blocking layer 3 that comprise substrate 1 and set gradually on described substrate 1;

Wherein, light blocking layer 3 is provided with void region 5;

The be projected to small part of described phase reversing layer 2 on described light blocking layer 3 is positioned at described void region 5;

Light from substrate side incidence is carried out phase reversal and is used for offsetting described light produces diffraction light through void region 5 by described phase reversing layer 2.

As shown in Figure 2, light is through having the comparison diagram of the mask plate of phase reversing layer 2 and the mask plate without phase reversing layer 2, as seen from Figure 2, some light through phase reversing layer 2 can be carried out phase reversal by the mask plate with phase reversing layer 2, now, some light through void region 5 produces diffraction effect, offset with the light through phase reversal, eliminate the diffraction effect (in Fig. 2, the floorage of black circular cone is less) of the void region 5 of mask plate, the size of the figure of the corresponding void region 5 that exposure is formed is less, the preparation of more small pixel structure can be completed, meanwhile, light intensity from the peritropous reduction in the center of void region 5 also faster (Fig. 2, the ratio of height to diameter of black circular cone is larger), the angle of gradient of the figure of the corresponding void region 5 that exposure is formed is larger.

As shown in Figure 3, preferably, between described phase reversing layer 2 and described substrate 1, antireflection layer 4 is also provided with; The projection of described antireflection layer 4 on described light blocking layer 3 covers described void region 5.

As from the foregoing, phase reversing layer 2 can by through light carry out 180 ° of phase reversals, disappeared mutually by the light of diffraction effect crossing void region 5, the angle of gradient of the figure of the corresponding void region 5 that exposure is formed is large, but required exposure is very large, there is the problem of production capacity deficiency; And antireflection layer 4 can make through light increase, to production capacity promote very large.But, if arrange antireflection layer 4 separately on mask plate, can be large due to diffraction effect, the angle of gradient of the figure of the corresponding void region 5 that exposure is formed is less, size becomes large.

Can by both mutual supplement with each other's advantages by arranging antireflection layer 4 and phase reversing layer 2 on mask plate simultaneously, in less exposure, under not affecting production capacity situation, the angle of gradient realizing the figure of the corresponding void region 5 that exposure is formed is larger, size is less.

Preferably, the thickness range of described phase reversing layer 2 is 400-600 dust.The light penetration scope of described phase reversing layer 2 is 5-8%.Should be understood that, the thickness of above-mentioned phase reversing layer 2 and light penetration can adjust according to the size of diffraction effect, as long as diffraction effect can be offset.

Particularly, the thickness range of light blocking layer 3 is 1500-2000 dust.

Preferably, the thickness range of described antireflection layer 4 is 200-400 dust.

Particularly, prepare void region 5 described in dot structure in exposure and comprise via hole.Diameter is as shown in Figure 3 the via hole of d, and the diameter range of this via hole is 1.7-2.0um.

Preferably, the distance d1 at the edge of the projection of described phase reversing layer 2 on described light blocking layer 3 and the edge of described via hole is 0.5-0.8um.

There is the mask plate of above-mentioned structure, without the need to upgrading exposure machine, just can make the via pattern that diameter is less than or equal to 2.5um, there is great application prospect.

In this enforcement, the material of antireflection layer 4 can be MgF; The material of light blocking layer 3 can be chromium; The material of phase reversing layer 2 can be SiMo.Should be understood that, the material of above-mentioned functions layer also can adopt other material in prior art, in this no limit.

Should be understood that, the preparation method of above-mentioned antireflection layer 4 and phase reversing layer 2 is that this is no longer going to repeat them for prior art category.

Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.

Claims

1. a mask plate, is characterized in that, comprises substrate and the phase reversing layer set gradually over the substrate, light blocking layer;

Wherein, described light blocking layer is provided with void region;

2. mask plate according to claim 1, is characterized in that, between described phase reversing layer and described substrate, be also provided with antireflection layer; The projection of described antireflection layer on described light blocking layer covers described void region.

3. mask plate according to claim 2, is characterized in that, the thickness range of described antireflection layer is 200-400 dust.

4. mask plate according to claim 1, is characterized in that, the thickness range of described phase reversing layer is 400-600 dust.

5. mask plate according to claim 1, is characterized in that, the light penetration scope of described phase reversing layer is 5-8%.

6. mask plate according to claim 1, is characterized in that, the thickness range of described light blocking layer is 1500-2000 dust.

7. mask plate according to claim 1, is characterized in that, described void region comprises via hole.

8. mask plate according to claim 7, is characterized in that, the diameter range of described via hole is 1.7-2.0um.

9. mask plate according to claim 8, is characterized in that, the distance at the edge of the projection of described phase reversing layer on described light blocking layer and the edge of described via hole is 0.5-0.8um.

10. mask plate according to claim 1, is characterized in that, the material of described antireflection layer comprises MgF; The material of described light blocking layer comprises chromium; The material of described phase reversing layer comprises SiMo.