CN104267055B - Synchrotron radiation energy stabilization device and method - Google Patents
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- 230000005469 synchrotron radiation Effects 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000006641 stabilisation Effects 0.000 title claims abstract description 14
- 238000011105 stabilization Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 71
- 239000013078 crystal Substances 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 239000010408 film Substances 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims description 22
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 230000000087 stabilizing effect Effects 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000013480 data collection Methods 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 230000002547 anomalous effect Effects 0.000 description 13
- 239000011669 selenium Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000000790 scattering method Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 208000035389 Ring chromosome 6 syndrome Diseases 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 102000004169 proteins and genes Human genes 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
本发明提供一种同步辐射能量稳定装置及方法。该同步辐射能量稳定装置,包括双晶单色器,还包括电离室、金属薄膜、荧光探测器、控制模块,所述电离室位于所述双晶单色器的出射光路上,所述金属薄膜位于所述电离室的出射光路上,且所述金属薄膜相对于所述电离室的出射光路倾斜设置,所述荧光探测器的探测端朝向所述金属薄膜,用于获取从所述电离室出射的光照射到所述金属薄膜上产生的荧光强度,所述控制模块用于根据所述荧光强度所对应的控制系数与转动阈值之间的关系,对双晶单色器的转动进行控制。该方案该方案实现了边实验边进行能量的监测与调整,保证了工作的稳定性,确保了数据收集的正确性。
The invention provides a synchrotron radiation energy stabilization device and method. The synchrotron radiation energy stabilization device includes a twin-crystal monochromator, and also includes an ionization chamber, a metal film, a fluorescence detector, and a control module. The ionization chamber is located on the outgoing light path of the twin-crystal monochromator, and the metal film Located on the outgoing optical path of the ionization chamber, and the metal thin film is arranged obliquely relative to the outgoing optical path of the ionization chamber, the detection end of the fluorescence detector faces the metal thin film, and is used to obtain light from the ionization chamber The emitted light irradiates the fluorescence intensity generated on the metal thin film, and the control module is used to control the rotation of the twin-crystal monochromator according to the relationship between the control coefficient corresponding to the fluorescence intensity and the rotation threshold. This scheme realizes energy monitoring and adjustment while experimenting, which ensures the stability of work and the correctness of data collection.
Description
技术领域technical field
本发明属于蛋白质晶体结构解析技术领域,尤其涉及一种同步辐射能量稳定装置及方法。The invention belongs to the technical field of protein crystal structure analysis, and in particular relates to a synchrotron radiation energy stabilization device and method.
背景技术Background technique
进行蛋白质晶体结构解析的过程中,一个关键问题是相位的获取。获取相位的方法有很多种,目前最为常用的方法是反常散射法。当入射X射线能量接近原子中某个电子的束缚能时会产生光电效应,这时原子的散射因子会产生很大变化,这种现象叫做反常散射。利用反常散射法可以在不实际替换晶体中原子的情况下快捷的得到相位。In the process of protein crystal structure analysis, a key issue is phase acquisition. There are many methods to obtain the phase, and the most commonly used method at present is the anomalous scattering method. When the incident X-ray energy is close to the binding energy of an electron in the atom, the photoelectric effect will occur, and the scattering factor of the atom will change greatly. This phenomenon is called anomalous scattering. Using the anomalous scattering method, the phase can be quickly obtained without actually replacing the atoms in the crystal.
利用反常散射法解决相位问题,需要在发生反常散射的原子吸收边附近用几个波长分别收集反常散射数据。只收集一个波长的数据称为单波长反常散射(single wavelength anomalous diffraction,SAD);收集多个波长的数据称为多波长反常散射(multi-wavelength anomalous diffraction,MAD)。收集MAD数据时,一般选择吸收边上吸收最大的波长,吸收边拐点处的波长,和吸收边高能端的波长。其中,吸收边拐点处的数据收集最为困难。因为在元素陡峭的吸收边拐点处,如图1所示Se元素吸收边及吸收边拐点处示意图,微小的能量抖动就会引起原子散射因子的剧烈变化,严重的情况最终会导致结构解析失败。Using the anomalous scattering method to solve the phase problem requires collecting anomalous scattering data at several wavelengths near the atomic absorption edge where the anomalous scattering occurs. Collecting data at only one wavelength is called single-wavelength anomalous diffraction (SAD); collecting data at multiple wavelengths is called multi-wavelength anomalous diffraction (MAD). When collecting MAD data, the wavelength of the maximum absorption on the absorption edge, the wavelength at the inflection point of the absorption edge, and the wavelength at the high energy end of the absorption edge are generally selected. Among them, data collection at the inflection point of the absorbing edge is the most difficult. Because at the inflection point of the steep absorption edge of the element, as shown in Figure 1, the schematic diagram of the absorption edge of the Se element and the inflection point of the absorption edge, a small energy jitter will cause a drastic change in the atomic scattering factor, and in severe cases, the structural analysis will eventually fail.
引起入射光能量变化的原因主要有以下两点:1.电子轨道变化引起的入射光角度变化;2.双晶单色器中的第一晶受热形变。There are two main reasons for the energy change of the incident light: 1. The change of the angle of the incident light caused by the change of the electron orbit; 2. The thermal deformation of the first crystal in the double crystal monochromator.
发明内容Contents of the invention
在下文中给出关于本发明的简要概述,以便提供关于本发明的某些方面的基本理解。应当理解,这个概述并不是关于本发明的穷举性概述。它并不是意图确定本发明的关键或重要部分,也不是意图限定本发明的范围。其目的仅仅是以简化的形式给出某些概念,以此作为稍后论述的更详细描述的前序。A brief overview of the invention is given below in order to provide a basic understanding of some aspects of the invention. It should be understood that this summary is not an exhaustive overview of the invention. It is not intended to identify key or critical parts of the invention nor to delineate the scope of the invention. Its purpose is merely to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
本发明提供一种同步辐射能量稳定装置,包括双晶单色器,还包括电离室、金属薄膜、荧光探测器、控制模块;The invention provides a synchrotron radiation energy stabilization device, which includes a twin-crystal monochromator, an ionization chamber, a metal film, a fluorescence detector, and a control module;
所述电离室位于所述双晶单色器的出射光路上,所述金属薄膜位于所述电离室的出射光路上,且所述金属薄膜相对于所述电离室的出射光路倾斜设置;The ionization chamber is located on the outgoing optical path of the twin crystal monochromator, the metal thin film is located on the outgoing optical path of the ionization chamber, and the metal thin film is arranged obliquely relative to the outgoing optical path of the ionization chamber;
所述荧光探测器的探测端朝向所述金属薄膜,用于获取从所述电离室出射的光照射到所述金属薄膜上产生的荧光并计算其强度;The detection end of the fluorescence detector faces the metal thin film, and is used to obtain the fluorescence generated by the light emitted from the ionization chamber and irradiate the metal thin film and calculate its intensity;
其中,I0为电离室标准入射光强度,If0为标准入射光照射到薄膜上产生的标准荧光强度,I为电离室实时入射光强度,If为实时入射光照射到金属薄膜上产生的实时荧光强度。in, I 0 is the standard incident light intensity of the ionization chamber, I f0 is the standard fluorescence intensity produced by the standard incident light on the film, I is the real-time incident light intensity of the ionization chamber, and If is the real-time fluorescence produced by the real-time incident light on the metal film strength.
本发明还提供一种同步辐射能量稳定方法,包括以下步骤:The present invention also provides a method for stabilizing synchrotron radiation energy, comprising the following steps:
获取电离室标准入射光强度,及标准入射光照射到薄膜上产生的标准荧光强度;Obtain the standard incident light intensity of the ionization chamber, and the standard fluorescence intensity produced by the standard incident light on the film;
获取电离室实时入射光强度,及实时入射光照射到金属薄膜上产生的实时荧光强度;Obtain the real-time incident light intensity of the ionization chamber and the real-time fluorescence intensity generated by the real-time incident light irradiating on the metal film;
其中,I0为电离室标准入射光强度,If0为标准入射光照射到薄膜上产生的标准荧光强度,I为电离室实时入射光强度,If为实时入射光照射到金属薄膜上产生的实时荧光强度;in, I 0 is the standard incident light intensity of the ionization chamber, I f0 is the standard fluorescence intensity produced by the standard incident light on the film, I is the real-time incident light intensity of the ionization chamber, and If is the real-time fluorescence produced by the real-time incident light on the metal film strength;
根据所述薄膜产生荧光的实时强度所对应的控制系数与转动阈值之间的关系,对双晶单色器的转动进行控制,所述控制系数为 According to the relationship between the control coefficient corresponding to the real-time intensity of fluorescence produced by the film and the rotation threshold, the rotation of the twin crystal monochromator is controlled, and the control coefficient is
本发明提供的上述方案,优点在于:可以通过改变其与入射光角度改变入射光能量,可以实现将多波长反常散射吸收边拐点处的能量稳定在0.2eV范围内;可以实现边实验边进行能量的监测与调整,确保了数据收集的正确性;简单易行,实施成本低。The above scheme provided by the present invention has the advantage that the energy of the incident light can be changed by changing the angle between it and the incident light, and the energy at the inflection point of the multi-wavelength anomalous scattering absorption can be stabilized within the range of 0.2eV; The monitoring and adjustment ensure the correctness of data collection; it is simple and easy to implement, and the implementation cost is low.
附图说明Description of drawings
参照下面结合附图对本发明实施例的说明,会更加容易地理解本发明的以上和其它目的、特点和优点。附图中的部件只是为了示出本发明的原理。在附图中,相同的或类似的技术特征或部件将采用相同或类似的附图标记来表示。The above and other objects, features and advantages of the present invention will be more easily understood with reference to the following description of the embodiments of the present invention in conjunction with the accompanying drawings. The components in the drawings are only to illustrate the principles of the invention. In the drawings, the same or similar technical features or components will be denoted by the same or similar reference numerals.
图1为Se元素吸收边及吸收边拐点处能量变化示意图;Figure 1 is a schematic diagram of the energy change at the absorption edge of Se element and the inflection point of the absorption edge;
图2为本发明实施例提供的同步辐射能量稳定装置的原理图;Fig. 2 is the schematic diagram of the synchrotron radiation energy stabilization device provided by the embodiment of the present invention;
图3为本发明实施例提供的同步辐射能量稳定方法的流程图。Fig. 3 is a flowchart of a method for stabilizing synchrotron radiation energy provided by an embodiment of the present invention.
附图标记说明:Explanation of reference signs:
电离室-1; 金属薄膜-2; 荧光探测器-3;Ionization chamber-1; Metal film-2; Fluorescence detector-3;
控制模块-4; 双晶单色器-5; 储存环-6;Control module-4; Twin crystal monochromator-5; Storage ring-6;
准直镜-7; 聚焦镜-8; 待测晶体-9;Collimating mirror-7; Focusing mirror-8; Crystal to be measured-9;
检测器-10。detector-10.
具体实施方式detailed description
下面参照附图来说明本发明的实施例。在本发明的一个附图或一种实施方式中描述的元素和特征可以与一个或更多个其它附图或实施方式中示出的元素和特征相结合。应当注意,为了清楚的目的,附图和说明中省略了与本发明无关的、本领域普通技术人员已知的部件和处理的表示和描述。Embodiments of the present invention will be described below with reference to the drawings. Elements and features described in one drawing or one embodiment of the present invention may be combined with elements and features shown in one or more other drawings or embodiments. It should be noted that representation and description of components and processes that are not related to the present invention and known to those of ordinary skill in the art are omitted from the drawings and descriptions for the purpose of clarity.
图2为本发明实施例提供的同步辐射能量稳定装置的原理图。Fig. 2 is a schematic diagram of a synchrotron radiation energy stabilization device provided by an embodiment of the present invention.
本实施例提供一种同步辐射能量稳定装置,包括双晶单色器5,还包括电离室1、金属薄膜2、荧光探测器3、控制模块4;This embodiment provides a synchrotron radiation energy stabilization device, which includes a twin crystal monochromator 5, and also includes an ionization chamber 1, a metal film 2, a fluorescence detector 3, and a control module 4;
电离室1位于双晶单色器5的出射光路上,金属薄膜2位于电离室1的出射光路上,且金属薄膜2相对于电离室1的出射光路倾斜设置;The ionization chamber 1 is located on the outgoing light path of the twin crystal monochromator 5, the metal thin film 2 is located on the outgoing light path of the ionization chamber 1, and the metal thin film 2 is arranged obliquely relative to the outgoing light path of the ionization chamber 1;
荧光探测器3的探测端朝向金属薄膜2,用于获取从电离室1出射的光照射到金属薄膜2上产生的荧光强度;The detecting end of the fluorescent detector 3 faces the metal thin film 2, and is used to obtain the fluorescence intensity generated by the light emitted from the ionization chamber 1 and irradiated on the metal thin film 2;
控制模块4,用于根据荧光强度所对应的控制系数与转动阈值之间的关系,对双晶单色器5的转动进行控制,控制系数为 The control module 4 is used to control the rotation of the twin crystal monochromator 5 according to the relationship between the control coefficient corresponding to the fluorescence intensity and the rotation threshold, and the control coefficient is
其中,I0为电离室标准入射光强度,If0为标准入射光照射到薄膜上产生的标准荧光强度,I为电离室实时入射光强度,If为实时入射光照射到金属薄膜上产生的实时荧光强度。in, I 0 is the standard incident light intensity of the ionization chamber, I f0 is the standard fluorescence intensity produced by the standard incident light on the film, I is the real-time incident light intensity of the ionization chamber, and If is the real-time fluorescence produced by the real-time incident light on the metal film strength.
储存环6发出一束光,光束经过准直镜7后入射到双晶单色器5上,双晶单色器5的出射光路上设置有聚焦镜8,光束经由双晶单色器5入射到准直镜7上。准直镜7的出射光路上设置有聚焦镜8,光束经由准直镜7入射到聚焦镜8上。聚焦镜8的出射光路上设置有电离室1,光束经由聚焦镜8入射到电离室1上。电离室1的出射光路上设置有金属薄膜2,光束从电离室1出射后入射到金属薄膜2上。入射到金属薄膜2上的其中一部分光子会穿过金属薄膜2,一部分光子会激发金属薄膜2。金属薄膜2相对于电离室1的出射光路倾斜设置,可以有效吸收由电离室1出射的光束。The storage ring 6 emits a beam of light, and the beam passes through the collimating mirror 7 and then enters the twin-crystal monochromator 5 . to the collimating mirror 7. A focusing mirror 8 is arranged on the outgoing light path of the collimating mirror 7 , and the light beam is incident on the focusing mirror 8 through the collimating mirror 7 . The ionization chamber 1 is arranged on the outgoing light path of the focusing mirror 8 , and the light beam is incident on the ionization chamber 1 through the focusing mirror 8 . A metal thin film 2 is arranged on the exit optical path of the ionization chamber 1 , and the light beam is incident on the metal thin film 2 after exiting the ionization chamber 1 . Part of the photons incident on the metal film 2 will pass through the metal film 2 , and some photons will excite the metal film 2 . The metal thin film 2 is arranged obliquely with respect to the outgoing light path of the ionization chamber 1 , and can effectively absorb the light beam outgoing from the ionization chamber 1 .
待测晶体9设置在金属薄膜2的出射光路上,穿过金属薄膜2的光入射到待测晶体9上,待测晶体9的出射光路上设置有检测器10,检测器10收集待测晶体9的MAD数值。The crystal to be measured 9 is arranged on the outgoing light path of the metal thin film 2, the light passing through the metal thin film 2 is incident on the crystal to be measured 9, and a detector 10 is arranged on the outgoing light path of the crystal to be measured 9, and the detector 10 collects the crystal to be measured MAD value of 9.
荧光探测器3的探测端朝向金属薄膜2,金属薄膜2上的金属元素被光子激发,产生的荧光强度被荧光探测器3捕捉。The detection end of the fluorescent detector 3 faces the metal thin film 2 , and the metal elements on the metal thin film 2 are excited by photons, and the generated fluorescence intensity is captured by the fluorescent detector 3 .
控制模块4根据根据荧光强度所对应的控制系数与转动阈值之间的关系,对双晶单色器5的转动进行控制,控制系数为 The control module 4 controls the rotation of the twin crystal monochromator 5 according to the relationship between the control coefficient corresponding to the fluorescence intensity and the rotation threshold, and the control coefficient is
其中,I0为电离室标准入射光强度,If0为标准入射光照射到薄膜上产生的标准荧光强度,I为电离室实时入射光强度,If为实时入射光照射到金属薄膜上产生的实时荧光强度。in, I 0 is the standard incident light intensity of the ionization chamber, I f0 is the standard fluorescence intensity produced by the standard incident light on the film, I is the real-time incident light intensity of the ionization chamber, and If is the real-time fluorescence produced by the real-time incident light on the metal film strength.
本实施例能够根据数据有效控制双晶单色器的转动,可以实现将多波长反常散射吸收边拐点处的能量稳定在0.2eV范围内;This embodiment can effectively control the rotation of the twin-crystal monochromator according to the data, and can stabilize the energy at the inflection point of the multi-wavelength anomalous scattering absorption edge within the range of 0.2eV;
可以实现边实验边进行能量的监测与调整,确保了数据收集的正确性。It can realize energy monitoring and adjustment while experimenting, ensuring the correctness of data collection.
进一步的,基于上述实施例,金属薄膜2为一侧镀有金属元素的聚酰亚胺薄膜。Further, based on the above embodiments, the metal film 2 is a polyimide film with one side coated with metal elements.
当光束入射到金属薄膜2上时,一部分光子会激发金属元素产生荧光,产生的荧光信号由荧光探测器3收集。一部分光子穿过金属薄膜2。When the light beam is incident on the metal thin film 2 , some photons will excite the metal element to generate fluorescence, and the generated fluorescence signal is collected by the fluorescence detector 3 . Part of the photons pass through the metal thin film 2 .
进一步的,基于上述实施例,金属元素为硒、铜、金、银、镍中的至少一种。Further, based on the above embodiments, the metal element is at least one of selenium, copper, gold, silver, and nickel.
检测时根据选定的上述一种元素,将对应的金属薄膜放入到光路中。According to the above-mentioned selected element during detection, the corresponding metal thin film is put into the optical path.
进一步的,上述金属元素通过离子溅射法蒸镀到聚酰亚胺薄膜上。Further, the above-mentioned metal elements are vapor-deposited on the polyimide film by ion sputtering.
进一步的,基于上述实施例,金属薄膜的金属元素面与电离室的出射光路夹角为45度。Further, based on the above embodiment, the included angle between the metal element surface of the metal thin film and the exit light path of the ionization chamber is 45 degrees.
这样可以保证有足够的直通光和足够荧光信号反馈给荧光探测器3。In this way, sufficient through-light and sufficient fluorescence signals can be fed back to the fluorescence detector 3 .
进一步的,基于上述实施例,荧光探测器3朝向与金属薄膜的金属元素面形成的夹角为45度。Further, based on the above-mentioned embodiment, the included angle between the orientation of the fluorescence detector 3 and the metal element surface of the metal thin film is 45 degrees.
这样可以保证荧光探测器3最大量的接收金属薄膜产生的荧光信号。This can ensure that the fluorescence detector 3 receives the maximum amount of fluorescence signals generated by the metal thin film.
进一步的,基于上述实施例,金属薄膜2所镀元素厚度优选为60-120nm。Further, based on the above-mentioned embodiments, the thickness of the elements plated on the metal thin film 2 is preferably 60-120 nm.
这个金属元素的厚度范围可以保证足够强的直通光和产生足够强的荧光信号。The thickness range of this metal element can ensure a strong enough through-light and generate a strong enough fluorescent signal.
进一步的,上述薄膜所镀元素厚度优选为100nm。Further, the thickness of the element plated on the above thin film is preferably 100 nm.
图3为本发明实施例提供的同步辐射能量稳定方法的流程图。Fig. 3 is a flowchart of a method for stabilizing synchrotron radiation energy provided by an embodiment of the present invention.
如图3所示,本发明又一实施例公开了一种同步辐射能量稳定方法,包括以下步骤:As shown in Figure 3, another embodiment of the present invention discloses a method for stabilizing synchrotron radiation energy, comprising the following steps:
S1,获取电离室标准入射光强度,及标准入射光照射到薄膜上产生的标准荧光强度;S1, obtain the standard incident light intensity of the ionization chamber, and the standard fluorescence intensity generated by the standard incident light irradiating on the film;
S2,获取电离室实时入射光强度,及实时入射光照射到金属薄膜上产生的实时荧光强度;S2, obtaining the real-time incident light intensity of the ionization chamber, and the real-time fluorescence intensity generated by the real-time incident light irradiating on the metal film;
在实际的测试过程中,选定待测晶体中某一特定元素吸收边拐点处能量E0,根据该特定元素来相应的选择金属薄膜。例如但不限于,若选定收集待测晶体中的硒元素进行多波长反常散射实验,则在收集吸收边拐点处反常散射数据时采用具有金属硒的金属薄膜。在实验指出,也即双晶单色器处于标准稳定工作状态的情况下,获取特定元素吸收边拐点处能量E0所对应的电离室标准入射光强度,及标准入射光照射到薄膜上产生的标准荧光强度,并根据以下关系式获得初始的吸收系数μ0。另外,还根据下述关系式获得实时的吸收系数μ。In the actual test process, a specific element in the crystal to be tested is selected to absorb the energy E 0 at the inflection point of the edge, and the metal film is selected accordingly according to the specific element. For example but not limited to, if the selenium element in the crystal to be tested is selected for multi-wavelength anomalous scattering experiments, a metal thin film with metal selenium is used when collecting anomalous scattering data at the inflection point of the absorption edge. According to the experiment, that is, when the twin-crystal monochromator is in the standard stable working state, the standard incident light intensity of the ionization chamber corresponding to the energy E 0 at the inflection point of the absorption edge of the specific element is obtained, and the standard incident light is irradiated on the thin film. Standard fluorescence intensity, and obtain the initial absorption coefficient μ 0 according to the following relationship. In addition, the real-time absorption coefficient μ is also obtained from the following relational expression.
其中,I0为电离室标准入射光强度,If0为标准入射光照射到薄膜上产生的标准荧光强度,I为电离室实时入射光强度,If为实时入射光照射到金属薄膜上产生的实时荧光强度;in, I 0 is the standard incident light intensity of the ionization chamber, I f0 is the standard fluorescence intensity produced by the standard incident light on the film, I is the real-time incident light intensity of the ionization chamber, and If is the real-time fluorescence produced by the real-time incident light on the metal film strength;
S3,根据所述薄膜产生荧光的实时强度所对应的控制系数与转动阈值之间的关系,对双晶单色器的转动进行控制,所述控制系数为 S3, according to the relationship between the control coefficient corresponding to the real-time intensity of fluorescence generated by the thin film and the rotation threshold, the rotation of the twin crystal monochromator is controlled, and the control coefficient is
本实施例可实现根据金属薄膜产生的荧光的实时强度对所对应的控制系数与转动阈值之间的关系,对双晶单色器的转动进行控制,进而得到稳定的同步辐射能量。In this embodiment, the rotation of the twin-crystal monochromator can be controlled according to the relationship between the real-time intensity of the fluorescence generated by the metal film and the corresponding control coefficient and the rotation threshold, so as to obtain stable synchrotron radiation energy.
进一步的,根据所述金属薄膜产生荧光的实时强度所对应的控制系数与转动阈值之间的关系,对双晶单色器的转动进行控制,包括:Further, according to the relationship between the control coefficient corresponding to the real-time intensity of fluorescence generated by the metal thin film and the rotation threshold, the rotation of the twin-crystal monochromator is controlled, including:
若所述控制系数大于所述转动阈值,则控制所述双晶单色器转动一步引起0.2eV能量变化(也即通过改变双晶单色器与入射光角度来改变入射光能量),否则控制所述双晶单色器保持不动。其中,转动阈值用于表征双晶单色器需要转动时的最小值,例如但不限于转动阈值可以为0.1。If the control coefficient is greater than the rotation threshold, control the twin-crystal monochromator to rotate one step to cause a 0.2eV energy change (that is, change the incident light energy by changing the angle between the twin-crystal monochromator and the incident light), otherwise control The twin crystal monochromator remains stationary. Wherein, the rotation threshold is used to characterize the minimum value when the twin crystal monochromator needs to rotate, for example but not limited to the rotation threshold may be 0.1.
本实施例可以实现在可控范围内,即多波长反常散射吸收边拐点处的能量稳定在0.2eV范围内,收集MAD数据。避免因为在元素陡峭的吸收边拐点处,微小的能量抖动引起的原子散射因子的剧烈变化,导致数据收集不准确甚至结构解析失败。In this embodiment, the MAD data can be collected within a controllable range, that is, the energy at the inflection point of the multi-wavelength anomalous scattering absorption edge is stable within the range of 0.2 eV. Avoid drastic changes in atomic scattering factors caused by small energy jitters at the inflection point of the steep absorption edge of the element, resulting in inaccurate data collection or even failure in structural analysis.
在实验时检测器多次的去采集数据,其中,检测器可以但不限于为CCD探测器,每次数据采集后,均会判断一下控制系数与转动阈值之间的关系,并根据判断结果对双晶单色器进行转动控制,该方案实现了边实验边进行能量的监测与调整,保证了工作的稳定性,确保了数据收集的正确性。During the experiment, the detector collects data multiple times. The detector can be but not limited to a CCD detector. After each data collection, it will judge the relationship between the control coefficient and the rotation threshold, and according to the judgment result. The double-crystal monochromator is used for rotation control. This scheme realizes the monitoring and adjustment of energy while experimenting, which ensures the stability of the work and the accuracy of data collection.
最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still be Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.
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