CN104261827B - 可低温烧结的低介电常数微波介质陶瓷Bi2MgW5O19 - Google Patents
可低温烧结的低介电常数微波介质陶瓷Bi2MgW5O19 Download PDFInfo
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- CN104261827B CN104261827B CN201410481582.XA CN201410481582A CN104261827B CN 104261827 B CN104261827 B CN 104261827B CN 201410481582 A CN201410481582 A CN 201410481582A CN 104261827 B CN104261827 B CN 104261827B
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
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CN201410481582.XA CN104261827B (zh) | 2014-09-21 | 2014-09-21 | 可低温烧结的低介电常数微波介质陶瓷Bi2MgW5O19 |
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CN201410481582.XA CN104261827B (zh) | 2014-09-21 | 2014-09-21 | 可低温烧结的低介电常数微波介质陶瓷Bi2MgW5O19 |
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CN104261827A CN104261827A (zh) | 2015-01-07 |
CN104261827B true CN104261827B (zh) | 2016-04-06 |
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CN201410481582.XA Active CN104261827B (zh) | 2014-09-21 | 2014-09-21 | 可低温烧结的低介电常数微波介质陶瓷Bi2MgW5O19 |
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Families Citing this family (2)
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CN105439553A (zh) * | 2015-12-19 | 2016-03-30 | 桂林理工大学 | 一种温度稳定型低介电常数微波介电陶瓷Bi4MgB2O10及其制备方法 |
CN105801102A (zh) * | 2016-02-17 | 2016-07-27 | 桂林理工大学 | 高品质因数超低介电常数微波介电陶瓷Mg3Bi2Ge3O12及其制备方法 |
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CN101439970A (zh) * | 2008-12-17 | 2009-05-27 | 电子科技大学 | 用于微波调谐的铋基介质材料及其制备方法 |
CN103496981B (zh) * | 2013-09-26 | 2015-01-07 | 桂林理工大学 | 低温烧结温度稳定型微波介电陶瓷Bi14W2O27及其制备方法 |
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Effective date of registration: 20201201 Address after: No.30, group 7, Shangqiao village, yong'anzhou Town, Gaogang District, Taizhou City, Jiangsu Province 225300 Patentee after: Yang Rongrong Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12 Patentee before: GUILIN University OF TECHNOLOGY |
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Effective date of registration: 20210105 Address after: No.25-1, Gangcheng Road, dongyinggang Economic Development Zone, Hekou District, Dongying City, Shandong Province Patentee after: Shandong Xingqiang Chemical Industry Technology Research Institute Co., Ltd Address before: No.30, group 7, Shangqiao village, yong'anzhou Town, Gaogang District, Taizhou City, Jiangsu Province 225300 Patentee before: Yang Rongrong |