CN104250522A - Environmentally friendly polishing liquid for memory material - Google Patents

Environmentally friendly polishing liquid for memory material Download PDF

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Publication number
CN104250522A
CN104250522A CN201410433925.5A CN201410433925A CN104250522A CN 104250522 A CN104250522 A CN 104250522A CN 201410433925 A CN201410433925 A CN 201410433925A CN 104250522 A CN104250522 A CN 104250522A
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CN
China
Prior art keywords
parts
environmentally friendly
polishing liquid
friendly polishing
memory material
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Pending
Application number
CN201410433925.5A
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Chinese (zh)
Inventor
宁贻伟
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Individual
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Individual
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Priority to CN201410433925.5A priority Critical patent/CN104250522A/en
Publication of CN104250522A publication Critical patent/CN104250522A/en
Pending legal-status Critical Current

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  • Semiconductor Memories (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention discloses an environmentally friendly polishing liquid for a memory material, and the environmentally friendly polishing liquid is characterized by including the following materials by weight: 25-30 parts of abrasive particles, 11-25 parts of bisphenol A polycarbonate, 8-15 parts of nano calcium carbonate, 7-13 parts of methylene chloride, 5-10 parts of benzyl alcohol, 1-9 parts of n-pentane, 1-3 parts of chloroform, 2-8 parts of sodium chloride, 7-16 parts of diphenyl ketone, 1-7 parts of a coupling agent and 1-2 parts of sodium dodecyl benzene sulfonate. The environmentally friendly polishing liquid is stable in performance and good in polishing effect, and can meet the need of the preparation process of a nano electronic phase change memory.

Description

A kind of storage material environmental protection polishing fluid
Technical field
The present invention relates to a kind of storage material environmental protection polishing fluid.
Background technology
Phase transition storage because of have at a high speed readings, high erasable number of times, non-volatile, component size is little, low in energy consumption, anti-strong motion and radioprotective, cost have the advantages such as competitive power, and thought the nonvolatile memory of future generation of the flash memories that most possible replacement is current by international semiconductor employer's organization.The ultimate principle of Phase change memory technology is storage media with chalcogenide compound, and utilize electric energy to make material between crystalline state and non-crystalline state (high resistant), mutually change write and the erasing of the information that realizes, the reading of information then realizes by the change of measuring resistance.Storage unit comprises the pore defined by dielectric substance, and phase change material deposition is in pore, and phase change material is connection electrode on one end of pore.Electrode contact makes electric current be programmed to this unit by this passage generation joule heating, or reads the resistance states of this unit.
At present, when building phase-change memory cell, current way is: first by the method depositing phase change material of magnetron sputtering in the pore defined by dielectric substance, then by reactive ion etching CRIE) or the method for chemically machinery polished, the phase change material of thin empty top is removed.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of storage material environmental protection polishing fluid.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of storage material environmental protection polishing fluid, is characterized in that, comprise the material of following parts by weight: polishing particles 25-30 part, bisphenol A polycarbonate 11-25 part, nano-calcium carbonate 8-15 part, methylene dichloride 7-13 part, phenylcarbinol 5-10 part, Skellysolve A 1-9 part, trichloromethane 1-3 part, sodium-chlor 2-8 part, two ketone 7-16 parts, coupling agent 1-7 part, Sodium dodecylbenzene sulfonate 1-2 part.
Polishing fluid stable performance of the present invention, polishing effect is good, can meet the needs preparing technique in sodium electronic phase-variable memory.
Embodiment
Embodiment 1
A kind of storage material environmental protection polishing fluid, is characterized in that, comprise the material of following parts by weight: polishing particles 25-30 part, bisphenol A polycarbonate 11-25 part, nano-calcium carbonate 8-15 part, methylene dichloride 7-13 part, phenylcarbinol 5-10 part, Skellysolve A 1-9 part, trichloromethane 1-3 part, sodium-chlor 2-8 part, two ketone 7-16 parts, coupling agent 1-7 part, Sodium dodecylbenzene sulfonate 1-2 part.

Claims (1)

1. a storage material environmental protection polishing fluid, is characterized in that, comprises the material of following parts by weight: polishing particles 25-30 part, bisphenol A polycarbonate 11-25 part, nano-calcium carbonate 8-15 part, methylene dichloride 7-13 part, phenylcarbinol 5-10 part, Skellysolve A 1-9 part, trichloromethane 1-3 part, sodium-chlor 2-8 part, two ketone 7-16 parts, coupling agent 1-7 part, Sodium dodecylbenzene sulfonate 1-2 part.
CN201410433925.5A 2014-08-29 2014-08-29 Environmentally friendly polishing liquid for memory material Pending CN104250522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410433925.5A CN104250522A (en) 2014-08-29 2014-08-29 Environmentally friendly polishing liquid for memory material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410433925.5A CN104250522A (en) 2014-08-29 2014-08-29 Environmentally friendly polishing liquid for memory material

Publications (1)

Publication Number Publication Date
CN104250522A true CN104250522A (en) 2014-12-31

Family

ID=52185786

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410433925.5A Pending CN104250522A (en) 2014-08-29 2014-08-29 Environmentally friendly polishing liquid for memory material

Country Status (1)

Country Link
CN (1) CN104250522A (en)

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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20141231

WD01 Invention patent application deemed withdrawn after publication