CN104242676A - Frequency conversion circuit used for high-voltage and high-power frequency control - Google Patents
Frequency conversion circuit used for high-voltage and high-power frequency control Download PDFInfo
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- CN104242676A CN104242676A CN201310232371.8A CN201310232371A CN104242676A CN 104242676 A CN104242676 A CN 104242676A CN 201310232371 A CN201310232371 A CN 201310232371A CN 104242676 A CN104242676 A CN 104242676A
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Abstract
The invention discloses a frequency conversion circuit used for high-voltage and high-power frequency control. The frequency conversion circuit comprises a rectifying circuit, a filtering circuit, a braking circuit and an inverter circuit. The positive electrode output end and the negative electrode output end of the rectifying circuit are connected with the positive electrode input end and the negative electrode input end of the filtering circuit respectively, the positive electrode output end and the negative electrode output end of the filtering circuit are connected with the positive electrode input end an the negative electrode input end of the braking circuit respectively, and the positive electrode output end and the negative electrode output end of the braking circuit are connected with the positive electrode input end and the negative electrode input end of the inverter circuit respectively. The frequency conversion circuit used for high-voltage and high-power frequency control converts high-voltage and high-power alternating currents into direct currents through series connection of electronic devices or parallel connection of electronic units, the direct currents are then converted into alternating currents with the needed voltage and the needed frequency, and therefore the high-voltage and high-power frequency control problem can be well solved.
Description
Technical field
The present invention relates to a kind of frequency changer circuit, particularly relate to a kind of frequency changer circuit for high-power frequency control.
Background technology
Frequency converter is application converter technique and microelectric technique, the electric control appliance of alternating current motor is controlled by changing machine operation supply frequency mode, nowadays the use voltage of frequency converter is more and more higher, use power also increasing, and most of frequency converter not can solve the problem of high-power, limitation is caused to the application of frequency converter.
Summary of the invention
Object of the present invention is just to provide a kind of frequency changer circuit that effectively can solve the high-power frequency conversion speed governing of high-voltage problem to solve the problem.
The present invention is achieved through the following technical solutions above-mentioned purpose:
A kind of frequency changer circuit for high-power frequency control, comprise rectification circuit, filter circuit, braking circuit and inverter circuit, the cathode output end of described rectification circuit and cathode output end are connected with the electrode input end of described filter circuit and negative input respectively, the cathode output end of described filter circuit is connected respectively at described braking circuit electrode input end and negative input with cathode output end, the cathode output end of described braking circuit is connected with described inverter circuit electrode input end and negative input respectively with cathode output end, described rectification circuit comprises the first diode, second diode, 3rd diode, 4th diode, 5th diode, 6th diode, 7th diode, 8th diode, 9th diode, tenth diode, 11 diode and the 12 diode, the first-phase input of three-phase alternating current is connected with the negative pole of described 7th diode respectively at the positive pole of described 4th diode, the negative pole of described 4th diode is connected with the positive pole of described first diode, the negative pole of described first diode is connected with the negative pole of described second diode and the negative pole of described 3rd diode respectively, the positive pole of described second diode is connected with the negative pole of described 5th diode, the second-phase input of three-phase alternating current is connected with the negative pole of described 8th diode with the positive pole of described 5th diode respectively, the positive pole of described 8th diode is connected with the negative pole of described 11 diode, the positive pole of described 11 diode is connected with the positive pole of described tenth diode and the positive pole of described 12 diode respectively, the negative pole of described tenth diode is connected with the positive pole of described 7th diode, the negative pole of described 12 diode is connected with the positive pole of described 9th diode, the third phase input of three-phase alternating current is connected with the positive pole of described 6th resistance and the negative pole of described 9th diode respectively, the negative pole of described 3rd diode is the cathode output end of described rectification circuit, the cathode output end of the just very described rectification circuit of described 12 diode.
Particularly, described filter circuit comprises the first resistance, the second resistance, the 4th resistance, switch, the first electric capacity and the second electric capacity, the first end of described 4th resistance is connected with the first end of described switch and the negative pole of described 3rd diode respectively, second end of described 4th resistance is connected with the first end of described first resistance and the first end of described first electric capacity respectively, second end of described first resistance is connected with the first end of described second resistance, and the second end of described first electric capacity is connected with the first end of described second electric capacity and the positive pole of described 12 diode respectively.
Particularly, described braking circuit comprises the 3rd resistance and the 13 insulated gate bipolar transistor, the described first end of the 3rd resistance is connected with the second end of described switch, second end of described 3rd resistance is connected with the collector electrode of described 13 insulated gate bipolar transistor, and the emitter of described 13 insulated gate bipolar transistor is connected with the second end of described second electric capacity.
Particularly, described inverter circuit comprises the first insulated gate bipolar transistor, second insulated gate bipolar transistor, 3rd insulated gate bipolar transistor, 4th insulated gate bipolar transistor, 5th insulated gate bipolar transistor, 6th insulated gate bipolar transistor, 7th insulated gate bipolar transistor, 8th insulated gate bipolar transistor, 9th insulated gate bipolar transistor, tenth insulated gate bipolar transistor, 11 insulated gate bipolar transistor, 12 insulated gate bipolar transistor, 13 diode, 14 diode, 15 diode, 16 diode, 17 diode, 18 diode, 19 diode, 20 diode, 21 diode, 22 diode, 23 diode and the 24 diode, the collector electrode of described first insulated gate bipolar transistor respectively with the negative pole of described 13 diode, the collector electrode of described second insulated gate bipolar transistor, the negative pole of described 14 diode, the collector electrode of described 3rd insulated gate bipolar transistor, the negative pole of described 15 diode is connected with the first end of described 3rd resistance, the emitter of described first insulated gate bipolar transistor respectively with the collector electrode of described 4th insulated gate bipolar transistor, the positive pole of described 13 diode is connected with the negative pole of described 16 diode, the emitter of described 3rd insulated gate bipolar transistor respectively with the collector electrode of described 6th insulated gate bipolar transistor, the positive pole of described 15 diode is connected with the negative pole of described 18 diode, the emitter of described 4th insulated gate bipolar transistor respectively with the positive pole of described 16 diode, the collector electrode of described 7th insulated gate bipolar transistor, the described negative pole of the 19 diode is connected with the first-phase output of three-phase alternating current, the emitter of described 5th insulated gate bipolar transistor respectively with the positive pole of described 17 diode, the collector electrode of described 8th insulated gate bipolar transistor, the described negative pole of the 20 diode is connected with the second-phase output of three-phase alternating current, the emitter of described 6th insulated gate bipolar transistor respectively with the positive pole of described 18 diode, the collector electrode of described 9th insulated gate bipolar transistor, the negative pole of described 21 diode is connected with three-phase alternating current third phase output, and the collector electrode of described 7th insulated gate bipolar transistor is respectively at the positive pole of described 19 diode, the collector electrode of described tenth insulated gate bipolar transistor is connected with the negative pole of described 22 diode, and the emitter of described 8th insulated gate bipolar transistor is respectively at the collector electrode of described 11 insulated gate bipolar transistor, the positive pole of described 20 diode is connected with the negative pole of described 23 diode, the emitter of described 9th insulated gate bipolar transistor respectively with the collector electrode of described 12 insulated gate bipolar transistor, the positive pole of described 21 diode is connected with the negative pole of described 24 diode, and the emitter of described tenth insulated gate bipolar transistor is respectively at the positive pole of described 22 diode, the emitter of described 11 insulated gate bipolar transistor, the positive pole of described 23 diode, the emitter of described 12 insulated gate bipolar transistor, the positive pole of described 24 diode is connected with the emitter of described 13 insulated gate bipolar transistor.
Beneficial effect of the present invention is:
Series connection between a kind of utilization of the frequency changer circuit for high-power frequency control of the present invention electronic devices and components or the parallel connection between electronic unit, be direct current by the AC conversion of high-power, again direct current is changed into the alternating current of required voltage and frequency, well can solve the frequency control problem to high-power.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of a kind of frequency changer circuit in high-power frequency control of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
As shown in Figure 1, a kind of frequency changer circuit for high-power frequency control of the present invention, comprise rectification circuit, filter circuit, braking circuit and inverter circuit, the cathode output end of rectification circuit and cathode output end are connected with the electrode input end of filter circuit and negative input respectively, the cathode output end of filter circuit and cathode output end are connected with the electrode input end of braking circuit and negative input respectively, the cathode output end of braking circuit and cathode output end are connected with the electrode input end of inverter circuit and negative input respectively, rectification circuit comprises the first diode D1, second diode D2, 3rd diode D3, 4th diode D4, 5th diode D5, 6th diode D6, 7th diode D7, 8th diode D8, 9th diode D9, tenth diode D10, 11 diode D11 and the 12 diode D12, the first-phase input of three-phase alternating current is connected with the negative pole of the 7th diode D7 respectively at the positive pole of the 4th diode D4, the negative pole of the 4th diode D4 is connected with the positive pole of the first diode D1, the negative pole of the first diode D1 is connected with the negative pole of the second diode D2 and the negative pole of the 3rd diode D3 respectively, the positive pole of the second diode D2 is connected with the negative pole of the 5th diode D5, the second-phase input of three-phase alternating current is connected with the negative pole of the 8th diode D8 with the positive pole of the 5th diode D5 respectively, the positive pole of the 8th diode D8 is connected with the negative pole of the 11 diode D11, the positive pole of the 11 diode D11 is connected with the positive pole of the tenth diode D10 and the positive pole of the 12 diode D12 respectively, the negative pole of the tenth diode D10 is connected with the positive pole of the 7th diode D7, the negative pole of the 12 diode D12 is connected with the positive pole of the 9th diode D9, the third phase input of three-phase alternating current is connected with the positive pole of the 6th resistance and the negative pole of the 9th diode D9 respectively, the negative pole of the 3rd diode D3 is the cathode output end of rectification circuit, the cathode output end of the just very rectification circuit of the 12 diode D12.
Filter circuit comprises the first resistance R1, the second resistance R2, the 4th resistance R4, K switch s, the first electric capacity C1 and the second electric capacity C2, the first end of the 4th resistance R4 is connected with the first end of K switch s and the negative pole of the 3rd diode D3 respectively, second end of the 4th resistance R4 is connected with the first end of the first resistance R1 and the first end of the first electric capacity C1 respectively, second end of the first resistance R1 is connected with the first end of the second resistance R2, and second end of the first electric capacity C1 is connected with the first end of the second electric capacity C2 and the positive pole of the 12 diode D12 respectively.
Braking circuit comprises the 3rd resistance R3 and the 13 insulated gate bipolar transistor VT13, the first end of the 3rd resistance R3 is connected with second end of K switch s, second end of the 3rd resistance R3 is connected with the collector electrode of the 13 insulated gate bipolar transistor VT13, and the emitter of the 13 insulated gate bipolar transistor is connected with second end of the second electric capacity C2.
Inverter circuit comprises the first insulated gate bipolar transistor VT1, second insulated gate bipolar transistor VT2, 3rd insulated gate bipolar transistor VT3, 4th insulated gate bipolar transistor VT4, 5th insulated gate bipolar transistor VT5, 6th insulated gate bipolar transistor VT6, 7th insulated gate bipolar transistor VT7, 8th insulated gate bipolar transistor VT8, 9th insulated gate bipolar transistor VT9, tenth insulated gate bipolar transistor VT10, 11 insulated gate bipolar transistor VT11, 12 insulated gate bipolar transistor VT12, 13 diode VT13, 14 diode VT14, 15 diode VT15, 16 diode VT16VT16, 17 diode VT17, 18 diode VT18, 19 diode VT19, 20 diode VT20, 21 diode VT21, 22 diode VT22, the collector electrode of the 23 diode VT23 and the 24 diode VT24, the first insulated gate bipolar transistor VT1 respectively with the negative pole of the 13 diode VT13, the collector electrode of the second insulated gate bipolar transistor VT2, the negative pole of the 14 diode VT14, the collector electrode of the 3rd insulated gate bipolar transistor VT3, the negative pole of the 15 diode VT15 is connected with the first end of the 3rd resistance R3, the emitter of the first insulated gate bipolar transistor VT1 respectively with the collector electrode of the 4th insulated gate bipolar transistor VT4, the positive pole of the 13 diode VT13 is connected with the negative pole of the 16 diode VT16VT16, the emitter of the 3rd insulated gate bipolar transistor VT3 respectively with the collector electrode of the 6th insulated gate bipolar transistor VT6, the positive pole of the 15 diode VT15 is connected with the negative pole of the 18 diode VT18, the emitter of the 4th insulated gate bipolar transistor VT4 respectively with the positive pole of the 16 diode VT16VT16, the collector electrode of the 7th insulated gate bipolar transistor VT7, the negative pole of the 19 diode VT19 is connected with the first-phase output of three-phase alternating current, the emitter of the 5th insulated gate bipolar transistor VT5 respectively with the positive pole of the 17 diode VT17, the collector electrode of the 8th insulated gate bipolar transistor VT8, the negative pole of the 20 diode VT20 is connected with the second-phase output of three-phase alternating current, the emitter of the 6th insulated gate bipolar transistor VT6 respectively with the positive pole of the 18 diode VT18, the collector electrode of the 9th insulated gate bipolar transistor VT9, the negative pole of the 21 diode VT21 is connected with three-phase alternating current third phase output, and the collector electrode of the 7th insulated gate bipolar transistor VT7 is respectively at the positive pole of the 19 diode VT19, the collector electrode of the tenth insulated gate bipolar transistor VT10 is connected with the negative pole of the 22 diode VT22, and the emitter of the 8th insulated gate bipolar transistor VT8 is respectively at the collector electrode of the 11 insulated gate bipolar transistor VT11, the positive pole of the 20 diode VT20 is connected with the negative pole of the 23 diode VT23, the emitter of the 9th insulated gate bipolar transistor VT9 respectively with the collector electrode of the 12 insulated gate bipolar transistor VT12, the positive pole of the 21 diode VT21 is connected with the negative pole of the 24 diode VT24, and the emitter of the tenth insulated gate bipolar transistor VT10 is respectively at the positive pole of the 22 diode VT22, the emitter of the 11 insulated gate bipolar transistor VT11, the positive pole of the 23 diode VT23, the emitter of the 12 insulated gate bipolar transistor VT12, the positive pole of the 24 diode VT24 is connected with the emitter of the 13 insulated gate bipolar transistor VT13.
Use the operation principle of a kind of frequency changer circuit for high-power frequency control of the present invention as follows:
First diode D1 ~ the 12 diode D12 forms the uncontrollable rectifier bridge of three-phase, change three-phase alternating current into direct current, voltage after rectification is pulse voltage, filter circuit filtering in addition must be connect, be in regenerative braking state to prevent the rotating speed of motor rotor when slowing down from may exceed synchronous speed now simultaneously, the kinetic energy of dragging system makes the voltage of DC bus constantly rise by feeding back in DC circuit, frequency converter overvoltage can be made like this, even frequency converter may be damaged, therefore need with braking circuit, this feedback energy to be consumed, the alternating current that DC inverter becomes electric voltage frequency and amplitude all adjustable by the inverter bridge that the first insulated gate bipolar transistor VT1 ~ the 12 insulated gate bipolar transistor VT12 forms, thus reach the object of frequency control.
Claims (4)
1. the frequency changer circuit for high-power frequency control, it is characterized in that: comprise rectification circuit, filter circuit, braking circuit and inverter circuit, the cathode output end of described rectification circuit and cathode output end are connected with the electrode input end of described filter circuit and negative input respectively, the cathode output end of described filter circuit and cathode output end are connected with the electrode input end of described braking circuit and negative input respectively, the cathode output end of described braking circuit and cathode output end are connected with the electrode input end of described inverter circuit and negative input respectively, described rectification circuit comprises the first diode, second diode, 3rd diode, 4th diode, 5th diode, 6th diode, 7th diode, 8th diode, 9th diode, tenth diode, 11 diode and the 12 diode, the first-phase input of three-phase alternating current is connected with the negative pole of described 7th diode respectively at the positive pole of described 4th diode, the negative pole of described 4th diode is connected with the positive pole of described first diode, the negative pole of described first diode is connected with the negative pole of described second diode and the negative pole of described 3rd diode respectively, the positive pole of described second diode is connected with the negative pole of described 5th diode, the second-phase input of three-phase alternating current is connected with the negative pole of described 8th diode with the positive pole of described 5th diode respectively, the positive pole of described 8th diode is connected with the negative pole of described 11 diode, the positive pole of described 11 diode is connected with the positive pole of described tenth diode and the positive pole of described 12 diode respectively, the negative pole of described tenth diode is connected with the positive pole of described 7th diode, the negative pole of described 12 diode is connected with the positive pole of described 9th diode, the third phase input of three-phase alternating current is connected with the positive pole of described 6th resistance and the negative pole of described 9th diode respectively, the negative pole of described 3rd diode is the cathode output end of described rectification circuit, the cathode output end of the just very described rectification circuit of described 12 diode.
2. a kind of frequency changer circuit for high-power frequency control according to claim 1, it is characterized in that: described filter circuit comprises the first resistance, second resistance, 4th resistance, switch, first electric capacity and the second electric capacity, the first end of described 4th resistance is connected with the first end of described switch and the negative pole of described 3rd diode respectively, second end of described 4th resistance is connected with the first end of described first resistance and the first end of described first electric capacity respectively, second end of described first resistance is connected with the first end of described second resistance, second end of described first electric capacity is connected with the first end of described second electric capacity and the positive pole of described 12 diode respectively.
3. a kind of frequency changer circuit for high-power frequency control according to claim 1, it is characterized in that: described braking circuit comprises the 3rd resistance and the 13 insulated gate bipolar transistor, the described first end of the 3rd resistance is connected with the second end of described switch, second end of described 3rd resistance is connected with the collector electrode of described 13 insulated gate bipolar transistor, and described is that the emitter of three insulated gate bipolar transistors is connected with the second end of described second electric capacity.
4. a kind of frequency changer circuit for high-power frequency control according to claim 1, is characterized in that: described inverter circuit comprises the first insulated gate bipolar transistor, second insulated gate bipolar transistor, 3rd insulated gate bipolar transistor, 4th insulated gate bipolar transistor, 5th insulated gate bipolar transistor, 6th insulated gate bipolar transistor, 7th insulated gate bipolar transistor, 8th insulated gate bipolar transistor, 9th insulated gate bipolar transistor, tenth insulated gate bipolar transistor, 11 insulated gate bipolar transistor, 12 insulated gate bipolar transistor, 13 diode, 14 diode, 15 diode, 16 diode, 17 diode, 18 diode, 19 diode, 20 diode, 21 diode, 22 diode, 23 diode and the 24 diode, the collector electrode of described first insulated gate bipolar transistor respectively with the negative pole of described 13 diode, the collector electrode of described second insulated gate bipolar transistor, the negative pole of described 14 diode, the collector electrode of described 3rd insulated gate bipolar transistor, the negative pole of described 15 diode is connected with the first end of described 3rd resistance, the emitter of described first insulated gate bipolar transistor respectively with the collector electrode of described 4th insulated gate bipolar transistor, the positive pole of described 13 diode is connected with the negative pole of described 16 diode, the emitter of described 3rd insulated gate bipolar transistor respectively with the collector electrode of described 6th insulated gate bipolar transistor, the positive pole of described 15 diode is connected with the negative pole of described 18 diode, the emitter of described 4th insulated gate bipolar transistor respectively with the positive pole of described 16 diode, the collector electrode of described 7th insulated gate bipolar transistor, the described negative pole of the 19 diode is connected with the first-phase output of three-phase alternating current, the emitter of described 5th insulated gate bipolar transistor respectively with the positive pole of described 17 diode, the collector electrode of described 8th insulated gate bipolar transistor, the described negative pole of the 20 diode is connected with the second-phase output of three-phase alternating current, the emitter of described 6th insulated gate bipolar transistor respectively with the positive pole of described 18 diode, the collector electrode of described 9th insulated gate bipolar transistor, the negative pole of described 21 diode is connected with three-phase alternating current third phase output, and the collector electrode of described 7th insulated gate bipolar transistor is respectively at the positive pole of described 19 diode, the collector electrode of described tenth insulated gate bipolar transistor is connected with the negative pole of described 22 diode, and the emitter of described 8th insulated gate bipolar transistor is respectively at the collector electrode of described 11 insulated gate bipolar transistor, the positive pole of described 20 diode is connected with the negative pole of described 23 diode, the emitter of described 9th insulated gate bipolar transistor respectively with the collector electrode of described 12 insulated gate bipolar transistor, the positive pole of described 21 diode is connected with the negative pole of described 24 diode, and the emitter of described tenth insulated gate bipolar transistor is respectively at the positive pole of described 22 diode, the emitter of described 11 insulated gate bipolar transistor, the positive pole of described 23 diode, the emitter of described 12 insulated gate bipolar transistor, the positive pole of described 24 diode is connected with the emitter of described 13 insulated gate bipolar transistor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310232371.8A CN104242676A (en) | 2013-06-13 | 2013-06-13 | Frequency conversion circuit used for high-voltage and high-power frequency control |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310232371.8A CN104242676A (en) | 2013-06-13 | 2013-06-13 | Frequency conversion circuit used for high-voltage and high-power frequency control |
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| CN104242676A true CN104242676A (en) | 2014-12-24 |
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| CN201310232371.8A Pending CN104242676A (en) | 2013-06-13 | 2013-06-13 | Frequency conversion circuit used for high-voltage and high-power frequency control |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418456A (en) * | 2018-04-26 | 2018-08-17 | 佛山科学技术学院 | A kind of four level shifter circuits of double inversion outputs |
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| CN201075834Y (en) * | 2007-06-12 | 2008-06-18 | 上海申传电气有限公司 | High power alternating current frequency conversion apparatus for coal mining machine drag system |
| CN201466984U (en) * | 2009-08-23 | 2010-05-12 | 山西科达自控工程技术有限公司 | Primary fan special-purpose rapid packing high voltage transducer for mine |
| CN203289379U (en) * | 2013-06-13 | 2013-11-13 | 成都昊地科技有限责任公司 | A frequency conversion circuit for converting frequency and regulating speed of AC with high voltage and large power |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201054552Y (en) * | 2007-06-01 | 2008-04-30 | 李志宏 | IGBT direct serial connection breaking high-voltage converter |
| CN201075834Y (en) * | 2007-06-12 | 2008-06-18 | 上海申传电气有限公司 | High power alternating current frequency conversion apparatus for coal mining machine drag system |
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| CN203289379U (en) * | 2013-06-13 | 2013-11-13 | 成都昊地科技有限责任公司 | A frequency conversion circuit for converting frequency and regulating speed of AC with high voltage and large power |
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| CN108418456A (en) * | 2018-04-26 | 2018-08-17 | 佛山科学技术学院 | A kind of four level shifter circuits of double inversion outputs |
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