CN104242230A - Direct-current breaker structure used for electric power protection - Google Patents
Direct-current breaker structure used for electric power protection Download PDFInfo
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Abstract
The invention relates to a direct-current breaker structure used for electric power protection. A direct-current breaker is connected between the positive electrode of a direct-current circuit power source and the load of the direct-current circuit power source in series, and comprises a current detecting module, an electrical level locking module and an MOS tube turning-off module. The output end of the current detecting module is connected with the electrical level locking module and used for detecting the fault current of a load circuit. The output end of the electrical level locking module is connected with the MOS tube turning-off module and used for converting voltage signals produced through current detection into control signals and locking the electrical level of the current detecting module. The MOS tube turning-off module is used for controlling the on-off states of a SiC power MOS tube connected between the power source and the load in series by pulling down the MOS tube. When the load and the power source are turned off, the MOS tube connected in series bears the high voltage, and the advantage of resisting the high voltage of the MOS tube is shown; by means of the switching speed of the SiC MOS tube, the reaction speed of the circuit becomes high, an external device can be reduced, and therefore the size and weight of the whole direct-current breaker can be reduced; the power consumption of the direct-current breaker structure is low.
Description
Technical field
The present invention relates to electric power relay protection field, particularly relate to a kind of DC circuit breaker structure for electric power protection.
Background technology
Still a large amount of mechanical type circuit breakers is adopted in current transmission system, but raising power quality required along with user, their shortcoming is more and more obvious.Mechanical type circuit breaker can not work in real time, flexibly, continuously and rapidly, often easily makes fault spread, destroys Circuits System stability; And often having electric arc to produce when disconnecting consumers, contact is fragile, turns off the reaction time long, is difficult to meet the sensitive requirement of some users to fault current process.
In recent years, along with the develop rapidly of power semiconductor, the performance of solid-state direct-current circuit breaker is greatly improved.Compared with Si semiconductor, SiC power component can realize miniaturization, low-power consumption and high efficiency further; It possesses more excellent operating characteristic under high temperature and high pressure environment, and switching loss is lower, and as low-loss element of new generation, SiC power component replaces Si element that circuit can be made to have better service behaviour.
In view of above-mentioned defect and SiC power component are as the advantage of power electronic device, creator of the present invention obtains this creation finally through long research and practice.
Summary of the invention
The object of the present invention is to provide a kind of DC circuit breaker structure device for electric power protection being switch element with SiC power component, in order to overcome above-mentioned technological deficiency.
For achieving the above object, the invention provides a kind of DC circuit breaker structure for electric power protection, between the positive pole that this DC circuit breaker is connected on DC circuit power supply and load, it comprises current detection module, level catch module and metal-oxide-semiconductor and turns off module;
Wherein, the output of described current detection module and level catch model calling, it detects the fault current of load circuit;
Output and the metal-oxide-semiconductor of described level catch module turn off model calling, and the voltage signal that current detecting produces is changed into control signal by it, and locks its level;
Described metal-oxide-semiconductor turns off module, and it controls shutoff and the conducting of the SiC power MOS pipe of connecting between power supply and load by drop-down metal-oxide-semiconductor.
Further, described current detection module comprises a detection resistance R1, and described detection resistance R1 is connected with operational amplifier U1, detects resistance R1 detection failure electric current, and carrys out through operational amplifier U1 the current signal that amplification detection arrives.
Further, described level catch module comprises d type flip flop U5, NOR gate U4, NAND gate U8, wherein,
The output of described current detection module is held with the D of d type flip flop U5 and is connected, also be connected with the input one of NOR gate U4 by inverter U3, the non-input two by inverter U7 AND OR NOT gate U4 of output Q of d type flip flop is connected, NOR gate U4 output is connected with the input one of NAND gate U8, the clock input CLK that reset signal end is connected to the input two, NAND gate U8 of NAND gate U8 output by inverter U9 is connected to d type flip flop by inverter U10 holds.
Further, described metal-oxide-semiconductor turns off module and comprises a power supply, a resistance R2, a drop-down metal-oxide-semiconductor M2 and the SiC power MOS pipe M1 with circuit connected in series, wherein,
The Q end of described d type flip flop U5 is connected to the grid of drop-down metal-oxide-semiconductor M2, drop-down metal-oxide-semiconductor M2 and resistance R2 is connected in constant-voltage circuit, the grid of the SiC power MOS pipe M1 in DC circuit is connected with the drain electrode of M2, and the drain-source voltage of drop-down metal-oxide-semiconductor M2 in constant-voltage circuit is the gate voltage of M1.
Further, big current is produced rapidly in circuit when short trouble appears in load circuit, DC circuit breaker detects big current, by drive circuit, big current is changed into control signal, then by control signal, the power MOS pipe of connecting in circuit is turned off, cut off the electricity supply and the connection of load with this; When after Failure elimination, then by drive circuit, the power MOS pipe of connecting in circuit is reopened, make circuit normally.
Further, described d type flip flop U5 is D edge triggered flip flop;
Described level catch module, utilizes the edging trigger of d type flip flop U5, and the input signal of D end only passes to output Q at rising edge clock, and circuit only has three kinds of situations that the CLK end of d type flip flop can be made to produce rising edge clock;
One, when the C end maintenance low level of d type flip flop, the input two of NAND gate U8 is high level always, the output of the input one AND OR NOT gate U4 of U8 is connected, the CLK of d type flip flop holds the output level of level AND OR NOT gate U4 to be consistent, utilize NOR gate only when two inputs are simultaneously for low level, output is just high level, the non-end of Q due to d type flip flop is high level always, so the input two of NOR gate is low level, so when the output of current detection module becomes high level from low level, the output of NOR gate U4 produces a rising edge signal, and then the CLK of d type flip flop holds generation rising edge signal,
Two, when the output of current detection module is high level always, to clear terminal C pulse signal of d type flip flop, the non-end of Q of d type flip flop is high level, and the output of U4 becomes high level, and namely the input one of U8 keeps high level, the CLK of d type flip flop holds the level of level and U8 input two to be consistent, when pulse signal becomes low level from high level, the input of U8 produces one by the low signal uprised, and d type flip flop CLK holds generation rising edge clock;
Three, the pulse signal held as d type flip flop C becomes low level from high level, the input two of U8 produces a rising edge signal, the non-end of Q of d type flip flop keeps high level, and the input two of U4 keeps low level, simultaneously when the output of current detection module becomes high level from low level, the input of U4 produces a trailing edge signal, the output of U4 produces a rising edge signal, and namely two inputs of U8 produce rising edge signal simultaneously, and the CLK of d type flip flop holds generation rising edge signal;
All the other time d type flip flop U5 not conducting, thus make output Q keep original level constant;
Utilize the Protection Counter Functions of d type flip flop U5 simultaneously, output Q can be set to low level again, the reset of realizing circuit.Utilize the Protection Counter Functions of d type flip flop U5 simultaneously, output Q can be set to low level again, the reset of realizing circuit.
Further, described metal-oxide-semiconductor turns off module, be connected in by SiC power MOS pipe M1 in the series circuit of resistance R2 and drop-down metal-oxide-semiconductor M2, the grid end of SiC power MOS pipe M1 is connected with the drain terminal of drop-down metal-oxide-semiconductor M2, and the drain-source resistance of drop-down metal-oxide-semiconductor M1 provides gate voltage to power MOS pipe;
Utilize the feature that the high pressure resistant and threshold voltage of SiC power MOS pipe M1 is large, when drop-down metal-oxide-semiconductor M2 conducting, drain-source voltage, lower than the threshold voltage of SiC power MOS pipe M1, turns off by SiC power MOS pipe; When drop-down metal-oxide-semiconductor M2 turns off, drain-source voltage increases, and higher than the threshold voltage of SiC power MOS pipe M1, makes the conducting of SiC power MOS pipe.
Beneficial effect of the present invention is compared with prior art: the present invention's metal-oxide-semiconductor of connecting in circuit turns off module, comprises SiC power MOS pipe M1 and drop-down metal-oxide-semiconductor M2, and d type flip flop and interlock circuit structure; DC circuit breaker in the present invention is quick on the draw, and can turn off rapidly and reset, and SiC power MOS pipe is as switch element simultaneously, and power consumption is very low.
When disconnecting consumers and power supply, series connection metal-oxide-semiconductor assume responsibility for large voltage, embodies its high voltage bearing advantage; In drop-down module, make use of the large threshold voltage of series connection metal-oxide-semiconductor, the unlatching of ability realizing circuit and the switching rate of shutoff SiC metal-oxide-semiconductor, not only make the reaction speed of circuit accelerate, and can external device (ED) be reduced, therefore can cut down the volume and weight of the whole device of DC circuit breaker; The conducting resistance of SiC element is little, and power consumption when whole DC circuit breaker is normally worked is less.
Accompanying drawing explanation
Fig. 1 is the circuit diagram structure of DC circuit breaker of the present invention;
Fig. 2 DC circuit breaker of the present invention is load voltage U load oscillogram and load circuit current oscillogram when load circuit is short-circuited;
Fig. 3 DC circuit breaker is short circuit fault simulation signal voltage oscillogram, reset signal UC oscillogram, control level signal UQ oscillogram, load circuit U load and I oscillogram in reseting procedure.
Embodiment
Below in conjunction with accompanying drawing, to above-mentioned being described in more detail with other technical characteristic and advantage of the present invention.
Refer to shown in Fig. 1, it is the circuit diagram structure of DC circuit breaker of the present invention, and between the positive pole that this DC circuit breaker is connected on DC circuit power supply and load, it comprises current detection module, level catch module and metal-oxide-semiconductor and turns off module; Wherein, described current detection module output and level catch model calling, it detects the fault current of load circuit; Output and the metal-oxide-semiconductor of described level catch module turn off model calling, and the voltage signal that it is produced by current detecting produces control signal, and locks its level; Described metal-oxide-semiconductor turns off module, and it controls shutoff and the conducting of the SiC power MOS pipe of connecting between power supply and load by drop-down metal-oxide-semiconductor.
Big current is produced rapidly in circuit when short trouble appears in load circuit, DC circuit breaker detects big current, produce control signal by drive circuit, then by control signal, the power MOS pipe of connecting in circuit is turned off, cut off the electricity supply and the connection of load with this; When after Failure elimination, then by drive circuit, the power MOS pipe of connecting in circuit is reopened, make circuit normally.Therefore, DC circuit breaker has two large functions: turn-off function and reset function.
Please continue shown in composition graphs 1, described current detection module comprises one and detects resistance R1, and described detection resistance R1 is connected with operational amplifier U1, detection resistance R1 detection failure electric current, and carrys out through operational amplifier U1 the current signal that amplification detection arrives; Also be connected with an inverter U2 at the output of described operational amplifier U1.
Described level catch module comprises d type flip flop U5, NOR gate U4, NAND gate U8 and some not gates, wherein, the output of current detection module is held with the D of d type flip flop U5 and is connected, also be connected with the input one of NOR gate U4 by inverter U3, the non-input two by inverter U7 AND OR NOT gate U4 of output Q of d type flip flop is connected, NOR gate U4 output is connected with the input one of NAND gate U8, reset signal end is connected to the input two of NAND gate U8 by inverter U9, the output of NAND gate U8 is connected to the clock input CLK end of d type flip flop by inverter U10.
Described metal-oxide-semiconductor turns off module and comprises a power supply, a resistance R2, a drop-down metal-oxide-semiconductor M2 and the SiC power MOS pipe M1 with circuit connected in series, wherein, the Q end of described d type flip flop U5 is connected to the grid of drop-down metal-oxide-semiconductor M2, drop-down metal-oxide-semiconductor M2 and resistance R2 is connected in constant-voltage circuit, the grid of the SiC power MOS pipe M1 in DC circuit is connected with the drain electrode of M2, and the drain-source voltage of drop-down metal-oxide-semiconductor M2 in constant-voltage circuit is the gate voltage of M1.
When load circuit breaks down, resistance R1 detects big current, is transferred to operational amplifier U1 with voltage signal, voltage signal is higher than the reference voltage of operational amplifier U1, amplifier output low level, through reverser U2, therefore last current detection module exports high level.
The high level that current detection module exports has, and one is the input D being directly inputted to level catch module d type flip flop U5, and two are through inverter U3 is input to a NOR gate U4 input with low level form.
Described d type flip flop U5 is D edge triggered flip flop, and the high level that only current detection module exports when CLK rising edge clock could pass to Q end, other moment from the D end of d type flip flop U5, and Q holds the level keeping original constant.Due to before circuit malfunctions, the C end of d type flip flop is low level, the input two of U8 is high level, the CLK of d type flip flop holds the output level of level and U4 to be consistent, Q is non-is simultaneously high level, so only have when the output of current detection module is high level, two inputs of NOR gate U4 are just low level simultaneously, and the output of NOR gate U4 could become high level from low level.
Therefore when load circuit breaks down, current detection module exports high level, the output of NOR gate U4 becomes high level from low level, the input end of clock CLK of d type flip flop U5 obtains a rising edge clock, the high level that current detection module exports is held by the D of d type flip flop U5 and is outputted to Q end, and namely Q becomes high level.Now Q is non-becomes low level, and the output of U4 becomes low level, and the CLK end of d type flip flop U5 also becomes low level by high level.Q due to d type flip flop U5 is non-, and end becomes low level, two inputs of NOR gate U4 can not be low level simultaneously, the output of U4 cannot become high level from low level again, d type flip flop U5 is made to obtain rising edge clock, thus d type flip flop U5 output Q is remained unchanged, thus realize the locking of control level Q;
Drop-down metal-oxide-semiconductor M2 and resistance R2 is connected in constant-voltage circuit, and the grid of the SiC power MOS pipe M1 in DC circuit is connected with the drain electrode of M2, and the drain-source voltage of M2 in constant-voltage circuit is the gate voltage of M1.
Because control signal Q is high level, make drop-down metal-oxide-semiconductor M2 conducting, its resistance diminishes rapidly, and drain-source voltage reduces rapidly, and namely the gate voltage of M1 reduces rapidly.When the gate voltage of SiC power MOS pipe M1 is less than threshold voltage, the turn-off function of realizing circuit.In the circuit of this embodiment, using a metal-oxide-semiconductor turned off as load, by the grid voltage of metal-oxide-semiconductor as fault-signal, when fault-signal is high level, metal-oxide-semiconductor conducting represents load circuit and is short-circuited, and produces big current.
As shown in Figure 2, circuit circuit before t normally works, and load circuit current I is I1; In t, circuital current I sharply increases, and circuit is short-circuited fault, and DC circuit breaker works rapidly, and disconnected by circuit, make load voltage reduce to 0, load current I also reduces to 0, realizes turning off thus protecting whole circuit.
After load circuit Failure elimination, a reset signal is held to the clear terminal C of d type flip flop U5, the output Q of d type flip flop U5 becomes low level, zero is set to by control signal, drop-down metal-oxide-semiconductor M2 gate voltage is zero, and it turns off again, and the resistance of drop-down metal-oxide-semiconductor M2 pipe increases rapidly, its drain-source voltage becomes large, and the grid voltage of SiC power MOS pipe M1 becomes large.When the gate voltage of SiC power MOS pipe M1 pipe M1 is higher than threshold voltage, M1 manages conducting again, and DC circuit is conducting again, the reset function of realizing circuit.
As shown in Figure 3, U in figure
faultfor short-circuit fault simulation signal, U
loadfor the voltage of load circuit port, 1 is load circuit current, U
qfor the voltage control signal that level catch module produces, U
cfor the reset signal of d type flip flop clear terminal.At t
1before moment, circuit normally works, load voltage U
loadoperating voltage is V
1, load current I is l
1, control signal U
qbe 0; At t
1moment short circuit analog signal U
faultv is become from 0
4, circuit is short-circuited fault, and I sharply increases, and DC circuit breaker detects big current, control signal U
qbecome V
2, by the metal-oxide-semiconductor M connected in circuit
1turn off, U
loadbecome 0 rapidly, 1 reduces to 0, and circuit realiration turns off; After this U
faultbecome 0, load circuit short trouble is eliminated, but due to the level catch effect of DC circuit breaker level catch module, control signal U
qremain V always
2, M
1pipe keeps off state, load circuit U
load0 is remained with 1; At t
2in the moment, to DC circuit breaker reset signal, namely give U
ca pulse signal, control signal U
qbecome 0 rapidly, turn off module by M in circuit by metal-oxide-semiconductor
1pipe reopens, U
loadbecome V
1, I becomes l
1, load circuit recovers normal work; At t
3moment, I sharply increased, and circuit is short-circuited fault again, U
qbecome V
2, DC circuit breaker breaking circuit, U
loadbecome 0, I and become 0; At t
4moment is to circuit clear terminal U
ca pulse signal, DC circuit breaker control end U
qby V
2become 0, because short circuit fault is not still eliminated, there is big current in a flash, control signal U in unlatching in circuit
qagain get back to V
2, DC circuit device again by circuit shut-down, U
loadstill be 0 with I; Until t
5in the moment, short trouble is eliminated, to U
ca pulse signal, U
qbecome 0, I and become I
1, U
loadbecome V
1, circuit normally works again.Can show that DC circuit breaker ensure that circuit only just can reopen to circuit reset signal after short trouble is eliminated thus, when short trouble still exists, circuit can not be opened.
When circuit does not have fault, resistance R1 detects small area analysis, current detecting output is low level, due to the level catch of level catch module, the input Q of d type flip flop U5 keeps low level constant, drop-down metal-oxide-semiconductor M2 pipe keeps turning off, and SiC power MOS pipe M1 manages normal unlatching, and DC circuit keeps normally.
The foregoing is only preferred embodiment of the present invention, is only illustrative for invention, and nonrestrictive.Those skilled in the art is understood, and can carry out many changes in the spirit and scope that invention claim limits to it, amendment, even equivalence, but all will fall within the scope of protection of the present invention.
Claims (8)
1. for a DC circuit breaker structure for electric power protection, it is characterized in that, between the positive pole that this DC circuit breaker is connected on DC circuit power supply and load, it comprises current detection module, level catch module and metal-oxide-semiconductor and turns off module;
Wherein, the output of described current detection module and level catch model calling, it detects the fault current of load circuit;
Output and the metal-oxide-semiconductor of described level catch module turn off model calling, and the voltage signal that current detecting produces is changed into control signal by it, and locks its level;
Described metal-oxide-semiconductor turns off module, and it controls shutoff and the conducting of the SiC power MOS pipe of connecting between power supply and load by drop-down metal-oxide-semiconductor.
2. the DC circuit breaker structure for electric power protection according to claim 1; it is characterized in that; described current detection module comprises a detection resistance R1; described detection resistance R1 is connected with operational amplifier U1; detect resistance R1 detection failure electric current, and through current signal that operational amplifier U1 amplification detection arrives.
3. the DC circuit breaker structure for electric power protection according to claim 2, it is characterized in that, described level catch module comprises d type flip flop U5, NOR gate U4, NAND gate U8, wherein, the output of described current detection module is held with the D of d type flip flop U5 and is connected, also be connected with the input one of NOR gate U4 by inverter U3, the non-input two by inverter U7 AND OR NOT gate U4 of output Q of d type flip flop is connected, NOR gate U4 output is connected with the input one of NAND gate U8, reset signal end is connected to the input two of NAND gate U8 by inverter U9, the output of NAND gate U8 is connected to the clock input CLK end of d type flip flop by inverter U10.
4. the DC circuit breaker structure for electric power protection according to claim 3, is characterized in that, described metal-oxide-semiconductor turns off module and comprises a power supply, a resistance R2, a drop-down metal-oxide-semiconductor M2 and the SiC power MOS pipe M1 with circuit connected in series, wherein,
The Q end of described d type flip flop U5 is connected to the grid of drop-down metal-oxide-semiconductor M2, drop-down metal-oxide-semiconductor M2 and resistance R2 is connected in constant-voltage circuit, the grid of the SiC power MOS pipe M1 in DC circuit is connected with the drain electrode of M2, and the drain-source voltage of drop-down metal-oxide-semiconductor M2 in constant-voltage circuit is the gate voltage of M1.
5. the DC circuit breaker structure for electric power protection according to claim 4; it is characterized in that; the non-input two by inverter U7 AND OR NOT gate U4 of output Q of described d type flip flop is connected; NOR gate U4 output is connected with the input one of NAND gate U8; the clock input CLK that reset signal end is connected to the input two, NAND gate U8 of NAND gate U8 output by inverter U9 is connected to d type flip flop by inverter U10 holds.
6. the DC circuit breaker structure for electric power protection according to claim 1, it is characterized in that, big current is produced rapidly in circuit when short trouble appears in load circuit, DC circuit breaker detects big current, by drive circuit, big current is changed into control signal, then by control signal, the power MOS pipe of connecting in circuit is turned off, cut off the electricity supply and the connection of load with this; When after Failure elimination, then by drive circuit, the power MOS pipe of connecting in circuit is reopened, make circuit normally.
7. the DC circuit breaker structure for electric power protection according to claim 3, is characterized in that, described d type flip flop U5 is D edge triggered flip flop;
Described level catch module, utilizes the edging trigger of d type flip flop U5, and the input signal of D end only passes to output Q at rising edge clock, and circuit only has three kinds of situations that the CLK end of d type flip flop can be made to produce rising edge clock;
One, when the C end maintenance low level of d type flip flop, the input two of NAND gate U8 is high level always, the output of the input one AND OR NOT gate U4 of U8 is connected, the CLK of d type flip flop holds the output level of level AND OR NOT gate U4 to be consistent, utilize NOR gate only when two inputs are simultaneously for low level, output is just high level, the non-end of Q due to d type flip flop is high level always, so the input two of NOR gate is low level, so when the output of current detection module becomes high level from low level, the output of NOR gate U4 produces a rising edge signal, and then the CLK of d type flip flop holds generation rising edge signal,
Two, when the output of current detection module is high level always, to clear terminal C pulse signal of d type flip flop, the non-end of Q of d type flip flop is high level, and the output of U4 becomes high level, and namely the input of U8 keeps high level, the CLK of d type flip flop holds the level of level and U8 input to be consistent, when pulse signal becomes low level from high level, the input of U8 produces one by the low signal uprised, and d type flip flop CLK holds generation rising edge clock;
Three, the pulse signal held as d type flip flop C becomes low level from high level, the input of U8 produces a rising edge signal, the non-end of Q of d type flip flop keeps high level, and the input of U4 keeps low level, simultaneously when the output of current detection module becomes high level from low level, the input of U4 produces a trailing edge signal, the output of U4 produces a rising edge signal, and namely two inputs of U8 produce rising edge signal simultaneously, and the CLK of d type flip flop holds generation rising edge signal;
All the other time d type flip flop U5 not conducting, thus make output Q keep original level constant;
Utilize the Protection Counter Functions of d type flip flop U5 simultaneously, output Q can be set to low level again, the reset of realizing circuit.
8. the DC circuit breaker structure for electric power protection according to claim 7, it is characterized in that, described metal-oxide-semiconductor turns off module, SiC power MOS pipe M1 is connected in the series circuit of resistance R2 and drop-down metal-oxide-semiconductor M2, the grid end of SiC power MOS pipe M1 is connected with the drain terminal of drop-down metal-oxide-semiconductor M2, and the drain-source resistance of drop-down metal-oxide-semiconductor M1 provides gate voltage to power MOS pipe;
Utilize the feature that the high pressure resistant and threshold voltage of SiC power MOS pipe M1 is large, when drop-down metal-oxide-semiconductor M2 conducting, drain-source voltage, lower than the threshold voltage of SiC power MOS pipe M1, turns off by SiC power MOS pipe; When drop-down metal-oxide-semiconductor M2 turns off, drain-source voltage increases, and higher than the threshold voltage of SiC power MOS pipe M1, makes the conducting of SiC power MOS pipe.
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| CN106130522A (en) * | 2016-07-14 | 2016-11-16 | 南京航空航天大学 | A kind of SiC MOSFET gradual change level driving circuit being applicable to DC solid-state power controller and method |
| CN107317571A (en) * | 2017-07-03 | 2017-11-03 | 重庆大学 | A kind of all solid state dc circuit breaker SiC MOSFET drive systems and control method |
| CN109842102A (en) * | 2019-03-07 | 2019-06-04 | 深圳市晟瑞科技有限公司 | A kind of overload short circuit protection circuit and device |
| CN110719095A (en) * | 2018-07-12 | 2020-01-21 | 浙江海利普电子科技有限公司 | Power supply circuit and method for monitoring state of load supplied by power supply circuit |
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| CN106130522A (en) * | 2016-07-14 | 2016-11-16 | 南京航空航天大学 | A kind of SiC MOSFET gradual change level driving circuit being applicable to DC solid-state power controller and method |
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| CN107317571A (en) * | 2017-07-03 | 2017-11-03 | 重庆大学 | A kind of all solid state dc circuit breaker SiC MOSFET drive systems and control method |
| CN110719095A (en) * | 2018-07-12 | 2020-01-21 | 浙江海利普电子科技有限公司 | Power supply circuit and method for monitoring state of load supplied by power supply circuit |
| CN109842102A (en) * | 2019-03-07 | 2019-06-04 | 深圳市晟瑞科技有限公司 | A kind of overload short circuit protection circuit and device |
| CN109842102B (en) * | 2019-03-07 | 2024-02-23 | 深圳市晟瑞科技有限公司 | Overload short-circuit protection circuit and device |
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| CN104242230B (en) | 2017-11-24 |
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