CN104241748A - Miniature high-performance double-zero-point double-mode ultra-narrow band filter - Google Patents
Miniature high-performance double-zero-point double-mode ultra-narrow band filter Download PDFInfo
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Abstract
The invention relates to a miniature high-performance double-zero-point double-mode ultra-narrow band filter. The miniature high-performance double-zero-point double-mode ultra-narrow band filter comprises input/output ports, input and output inductors, source and load coupling strip lines and three double-mode resonators, wherein the three double-mode resonators are achieved with a strip line structure. All the structures are achieved through the multi-layer low-temperature cofiring ceramics. The miniature high-performance double-zero-point double-mode ultra-narrow band filter has the advantages that the frequency coverage range is wide, the relative band width is small, the insertion loss is small, the weight is light, the size is small, the reliability is high, the electrical performance is good, the temperature stability is good, the electrical performance batch consistency is good, cost is low, and large-batch production can be achieved. The miniature high-performance double-zero-point double-mode ultra-narrow band filter is suitable for narrow-band communication systems, such as communication and satellite communication at radio frequency, the microwave frequency band and the millimeter wave frequency band, having quite high requirements for the size, the electrical performance, the temperature stability and the reliability.
Description
Technical field
The present invention relates to a kind of frequency microwave filter, particularly a kind of miniature high-performance bimodulus ultra-narrow bandwidth filter at two zero point.
Background technology
In recent years, along with the developing rapidly of microminiaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become the developing direction of microwave current/RF application, all have higher requirement to the performance of microwave filter, size, reliability and cost.In some national defence tip device, present use frequency range is quite full, so the tip device such as satellite communication develop towards millimeter wave band, so microwave and millimeter wave band filter has become the critical electronic parts in this band reception and transmitting branch, the leading indicator describing this component capabilities has had: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, passband input/output voltage standing-wave ratio, insertion phase shift and delay/frequency characteristic, temperature stability, volume, weight, reliability etc.
Current filter type surface acoustic wave filter, microstrip filter and the LC filter wider in the frequency microwave frequency range scope of application.Surface Acoustic Wave Filter filtering characteristic is better, but its cost of manufacture is higher and comparatively harsh to the requirement of processing technology, and yields is lower.Microstrip filter and LC filter are not easy to realize transmission zero and their volume is unfavorable for more greatly miniaturized integrated.There is the defect that simultaneously cannot realize the high and low characteristic of cost of good filtering and narrow-band characteristic, microminiaturization, yields in described prior art.
Summary of the invention
The object of the present invention is to provide and a kind of realize narrow bandwidth by strip lines configuration, the miniature high-performance of the one bimodulus ultra-narrow bandwidth filter at two zero point that volume is little, lightweight, reliability is high, excellent electrical property, structure are simple, rate of finished products is high, batch consistency is good, cost is low, temperature performance is stable.
The technical scheme realizing the object of the invention is: a kind of miniature high-performance bimodulus ultra-narrow bandwidth filter at two zero point, comprises 50 ohmage input port P1, input internal interface C1, interface input inductance C2, the banded line C6 of the first cross-couplings, the banded line C7 of the second cross-couplings, the first bimodulus resonant cavity B1 first strip line C3, the first bimodulus resonant cavity B1 second strip line C4, the first bimodulus resonant cavity B1 the 3rd strip line C14, the first bimodulus resonant cavity B1 the 4th strip line C15; Second bimodulus resonant cavity B2 first strip line C8, the second bimodulus resonant cavity B2 second strip line C9, the second bimodulus resonant cavity B2 the 3rd strip line C17, the second bimodulus resonant cavity B2 the 4th strip line C18; 3rd bimodulus resonant cavity B3 first strip line C10, the 3rd bimodulus resonant cavity B3 second strip line C11, the 3rd bimodulus resonant cavity B3 the 3rd strip line C19, the 3rd bimodulus resonant cavity B3 the 4th strip line C20, connect the first attaching strap-like line C5 of the first bimodulus resonant cavity B1, the second bimodulus resonant cavity B2 and the 3rd bimodulus resonant cavity B3, the second attaching strap-like line C16, output interface inductance C12, export internal interface C13,50 ohmage output port P2.
The center of 50 ohmage input port P1 arranges input internal interface C1, and the other end of input internal interface C1 inputs inductance C2 with interface and is connected, and the other end of interface input inductance C2 is connected with the banded line C6 of the first cross-couplings.
First bimodulus resonant cavity B1 first strip line C3, the first bimodulus resonant cavity B1 second strip line C4, the first bimodulus resonant cavity B1 the 3rd strip line C14 and the first bimodulus resonant cavity B1 the 4th strip line C15 form the first bimodulus resonant cavity B1.First bimodulus resonant cavity B1 first strip line C3 is positioned at the top of interface input inductance C2, and the two intercouples.First bimodulus resonant cavity B1 second strip line C4 is positioned at the top of the first bimodulus resonant cavity B1 first strip line C3, and the two intercouples.First bimodulus resonant cavity B1 the 3rd strip line C14 is positioned at the below of interface input inductance C2, and the two intercouples.Both belows that first bimodulus resonant cavity B1 the 4th strip line C15 is positioned at the first bimodulus resonant cavity B1 the 3rd strip line C14 intercouple.
The other end of the first bimodulus resonant cavity B1 first strip line C3 is connected with the first attaching strap-like line C5.The other end of the first bimodulus resonant cavity B1 the 3rd strip line C14 is connected with the second attaching strap-like line C16.
Second bimodulus resonant cavity B2 first strip line C8, the second bimodulus resonant cavity B2 second strip line C9, the second bimodulus resonant cavity B2 the 3rd strip line C17 and the second bimodulus resonant cavity B2 the 4th strip line C18 form the second bimodulus resonant cavity B2.Second bimodulus resonant cavity B2 first strip line C8 is set in the centre position of the first attaching strap-like line C5, the second bimodulus resonant cavity B2 the 4th strip line C18 is set in the centre position of the second attaching strap-like line C16.Second bimodulus resonant cavity B2 second strip line C9 is positioned at the top of the second bimodulus resonant cavity B2 first strip line C8, and the two intercouples; Second bimodulus resonant cavity B2 the 3rd strip line C17 is positioned at below the second bimodulus resonant cavity B2 the 4th strip line C18, and the two intercouples.
3rd bimodulus resonant cavity B3 first strip line C10, the 3rd bimodulus resonant cavity B3 second strip line C11, the 3rd bimodulus resonant cavity B3 the 3rd strip line C19 and the 3rd bimodulus resonant cavity B3 the 4th strip line C20 form the 3rd bimodulus resonant cavity B3.The other end of the first attaching strap-like line C5 is connected with the 3rd bimodulus resonant cavity B3 second strip line C11, and the 3rd bimodulus resonant cavity B3 first strip line C10 is positioned at the top of the 3rd bimodulus resonant cavity B3 second strip line C11, and the two intercouples.The other end of the second attaching strap-like line C16 is connected with the 3rd bimodulus resonant cavity B3 the 3rd strip line C19, and the 3rd bimodulus resonant cavity B3 the 4th strip line C20 is positioned at the below of the 3rd bimodulus resonant cavity B3 the 3rd strip line C19, and the two intercouples.
Output interface inductance C12 is positioned at the top of the 3rd bimodulus resonant cavity B3 the 3rd strip line C19, and both intercouple; Output interface inductance C12 is positioned at the below of the 3rd bimodulus resonant cavity B3 second strip line C11, and both intercouple.
The banded line C7 of second cross-couplings is positioned at the positive right side of the banded line C6 of the first cross-couplings, and the two intercouples, and the other end of the banded line C7 of the second cross-couplings is connected with output interface inductance C12.The other end of output interface inductance C12 is connected with output internal interface C13, and the other end exporting internal interface C13 is arranged at the center of 50 ohmage output port P2.
Described first bimodulus resonant cavity B1 second strip line C4, the first bimodulus resonant cavity B1 the 4th strip line C15, the second bimodulus resonant cavity B2 second strip line C9, the second bimodulus resonant cavity B2 the 3rd strip line C17, the 3rd bimodulus resonant cavity B3 first strip line C10 and the 3rd bimodulus resonant cavity B3 the 4th strip line C20 are deviating from the side ground connection respectively of the banded line C6 of the first cross-couplings.
First bimodulus resonant cavity B1 and the 3rd bimodulus resonant cavity B3 is about the second bimodulus resonant cavity B2 even symmetry; First bimodulus resonant cavity B1, the second bimodulus resonant cavity B2 and the 3rd bimodulus resonant cavity B3 itself are laterally zygomorphic geometry separately simultaneously.
Described structure all adopts LTCC processes to realize.
Compared with prior art, because the present invention adopts low-loss low-temperature co-burning ceramic material and new construction 3 D stereo integrated technology, the remarkable advantage brought is: (1) adjustable double mode structure, and in band, in smooth, passband, Insertion Loss is low; (2) filter bandwidht is narrower; (3) filter destructing is compact, and volume is little, lightweight, reliability is high; (4) excellent electrical property; (5) circuit realiration structure is simple, can realize producing in enormous quantities, and rate of finished products is high; (6) cost is low; (7) easy to install and use, full-automatic chip mounter can be used to install and welding.
Accompanying drawing explanation
Fig. 1 is the shape assumption diagram of miniature high-performance of the present invention bimodulus ultra-narrow bandwidth filter at two zero point.
Fig. 2 is the vertical view of miniature high-performance of the present invention bimodulus ultra-narrow bandwidth filter at two zero point.
Fig. 3 is the end view of miniature high-performance of the present invention bimodulus ultra-narrow bandwidth filter at two zero point.
Fig. 4 is the amplitude-versus-frequency curve figure of miniature high-performance of the present invention bimodulus ultra-narrow bandwidth filter output at two zero point.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Composition graphs 1, Fig. 2 and Fig. 3, the miniature high-performance of one of the present invention bimodulus ultra-narrow bandwidth filter at two zero point, this filter comprises 50 ohmage input port P1, input internal interface C1, interface input inductance C2, the banded line C6 of the first cross-couplings, the banded line C7 of the second cross-couplings, the first bimodulus resonant cavity B1 first strip line C3, the first bimodulus resonant cavity B1 second strip line C4, the first bimodulus resonant cavity B1 the 3rd strip line C14, the first bimodulus resonant cavity B1 the 4th strip line C15; Second bimodulus resonant cavity B2 first strip line C8, the second bimodulus resonant cavity B2 second strip line C9, the second bimodulus resonant cavity B2 the 3rd strip line C17, the second bimodulus resonant cavity B2 the 4th strip line C18; 3rd bimodulus resonant cavity B3 first strip line C10, the 3rd bimodulus resonant cavity B3 second strip line C11, the 3rd bimodulus resonant cavity B3 the 3rd strip line C19, the 3rd bimodulus resonant cavity B3 the 4th strip line C20, connect the first attaching strap-like line C5 of the first bimodulus resonant cavity B1, the second bimodulus resonant cavity B2 and the 3rd bimodulus resonant cavity B3, the second attaching strap-like line C16, output interface inductance C12, export internal interface C13,50 ohmage output port P2.
The center of 50 ohmage input port P1 arranges input internal interface C1, and the other end of input internal interface C1 inputs inductance C2 with interface and is connected, and the other end of interface input inductance C2 is connected with the banded line C6 of the first cross-couplings.
First bimodulus resonant cavity B1 first strip line C3, the first bimodulus resonant cavity B1 second strip line C4, the first bimodulus resonant cavity B1 the 3rd strip line C14 and the first bimodulus resonant cavity B1 the 4th strip line C15 form the first bimodulus resonant cavity B1.First bimodulus resonant cavity B1 first strip line C3 is positioned at the top of interface input inductance C2, and the two intercouples.First bimodulus resonant cavity B1 second strip line C4 is positioned at the top of the first bimodulus resonant cavity B1 first strip line C3, and the two intercouples.First bimodulus resonant cavity B1 the 3rd strip line C14 is positioned at the below of interface input inductance C2, and the two intercouples.Both belows that first bimodulus resonant cavity B1 the 4th strip line C15 is positioned at the first bimodulus resonant cavity B1 the 3rd strip line C14 intercouple.
The other end of the first bimodulus resonant cavity B1 first strip line C3 is connected with the first attaching strap-like line C5.The other end of the first bimodulus resonant cavity B1 the 3rd strip line C14 is connected with the second attaching strap-like line C16.
Second bimodulus resonant cavity B2 first strip line C8, the second bimodulus resonant cavity B2 second strip line C9, the second bimodulus resonant cavity B2 the 3rd strip line C17 and the second bimodulus resonant cavity B2 the 4th strip line C18 form the second bimodulus resonant cavity B2.Second bimodulus resonant cavity B2 first strip line C8 is set in the centre position of the first attaching strap-like line C5, the second bimodulus resonant cavity B2 the 4th strip line C18 is set in the centre position of the second attaching strap-like line C16.Second bimodulus resonant cavity B2 second strip line C9 is positioned at the top of the second bimodulus resonant cavity B2 first strip line C8, and the two intercouples; Second bimodulus resonant cavity B2 the 3rd strip line C17 is positioned at below the second bimodulus resonant cavity B2 the 4th strip line C18, and the two intercouples.
3rd bimodulus resonant cavity B3 first strip line C10, the 3rd bimodulus resonant cavity B3 second strip line C11, the 3rd bimodulus resonant cavity B3 the 3rd strip line C19 and the 3rd bimodulus resonant cavity B3 the 4th strip line C20 form the 3rd bimodulus resonant cavity B3.The other end of the first attaching strap-like line C5 is connected with the 3rd bimodulus resonant cavity B3 second strip line C11, and the 3rd bimodulus resonant cavity B3 first strip line C10 is positioned at the top of the 3rd bimodulus resonant cavity B3 second strip line C11, and the two intercouples.The other end of the second attaching strap-like line C16 is connected with the 3rd bimodulus resonant cavity B3 the 3rd strip line C19, and the 3rd bimodulus resonant cavity B3 the 4th strip line C20 is positioned at the below of the 3rd bimodulus resonant cavity B3 the 3rd strip line C19, and the two intercouples.
Output interface inductance C12 is positioned at the top of the 3rd bimodulus resonant cavity B3 the 3rd strip line C19, and both intercouple; Output interface inductance C12 is positioned at the below of the 3rd bimodulus resonant cavity B3 second strip line C11, and both intercouple.
The banded line C7 of second cross-couplings is positioned at the positive right side of the banded line C6 of the first cross-couplings, and the two intercouples, and the other end of the banded line C7 of the second cross-couplings is connected with output interface inductance C12.The other end of output interface inductance C12 is connected with output internal interface C13, and the other end exporting internal interface C13 is arranged at the center of 50 ohmage output port P2.
Composition graphs 1, the first bimodulus resonant cavity B1 second strip line C4, the first bimodulus resonant cavity B1 the 4th strip line C15, the second bimodulus resonant cavity B2 second strip line C9, the second bimodulus resonant cavity B2 the 3rd strip line C17, the 3rd bimodulus resonant cavity B3 first strip line C10 and the 3rd bimodulus resonant cavity B3 the 4th strip line C20 are deviating from the side ground connection respectively of the banded line C6 of the first cross-couplings.
Composition graphs 1, the first bimodulus resonant cavity B1, the second bimodulus resonant cavity B2 and the 3rd bimodulus resonant cavity B3 are the geometries of even symmetry; First bimodulus resonant cavity B1, the second bimodulus resonant cavity B2 and the 3rd bimodulus resonant cavity B3 itself are also laterally zygomorphic geometry separately simultaneously.According to the analytical method of parity mode, the size of Reasonable adjustment bimodulus resonant cavity just can adjust arbitrarily the resonance frequency of bimodulus, when the resonance frequency of two kinds of patterns and degree of coupling proper time, just can obtain the filter of function admirable.
Composition graphs 1, described structure all adopts LTCC processes to realize.
Below in conjunction with embodiment, further detailed description is done to the present invention.
Embodiment 1
First bimodulus resonant cavity B1 first strip line C3 of the miniature dual mode wideband filter of novel solid of the present invention, the first bimodulus resonant cavity B1 second strip line C4, the second bimodulus resonant cavity B2 first strip line C8 and the second bimodulus resonant cavity B2 second strip line C9 and size be respectively 1.52mm × 0.5mm, 1.8mm × 0.4mm, 1.8mm × 0.5mm and 1.9mm × 0.6mm
The size of a kind of miniature high-performance of the present invention bimodulus ultra-narrow bandwidth filter at two zero point is only 4.8mm × 4.2mm × 1.5mm, its simulation performance can be as can be seen from Figure 4, passband central frequency is 2.75GHz, passband 2.71GHz ~ 2.78GHz, relative bandwidth is very narrow is only 3.5%, and in passband, minimum insertion loss is 2dB, and input port return loss is all better than 17.7dB, band is outer creates two zero points, and Out-of-band rejection is better.
Claims (4)
1. a miniature high-performance bimodulus ultra-narrow bandwidth filter at two zero point, it is characterized in that, comprise 50 ohmage input ports (P1), input internal interface (C1), interface input inductance (C2), the banded line (C6) of first cross-couplings, the banded line (C7) of second cross-couplings, first bimodulus resonant cavity (B1) first strip line (C3), first bimodulus resonant cavity (B1) second strip line (C4), first bimodulus resonant cavity (B1) the 3rd strip line (C14), first bimodulus resonant cavity (B1) the 4th strip line (C15), second bimodulus resonant cavity (B2) first strip line (C8), the second bimodulus resonant cavity (B2) second strip line (C9), the second bimodulus resonant cavity (B2) the 3rd strip line (C17), the second bimodulus resonant cavity (B2) the 4th strip line (C18), 3rd bimodulus resonant cavity (B3) first strip line (C10), 3rd bimodulus resonant cavity (B3) second strip line (C11), 3rd bimodulus resonant cavity (B3) the 3rd strip line (C19), 3rd bimodulus resonant cavity (B3) the 4th strip line (C20), connect the first bimodulus resonant cavity (B1), first attaching strap-like line (C5) of the second bimodulus resonant cavity (B2) and the 3rd bimodulus resonant cavity (B3) and the second attaching strap-like line (C16), output interface inductance (C12), export internal interface (C13), 50 ohmage output ports (P2),
The center of 50 ohmage input ports (P1) arranges input internal interface (C1), the other end of input internal interface (C1) inputs inductance (C2) with interface and is connected, and the other end of interface input inductance (C2) is connected with the banded line (C6) of the first cross-couplings;
First bimodulus resonant cavity (B1) first strip line (C3), the first bimodulus resonant cavity (B1) second strip line (C4), the first bimodulus resonant cavity (B1) the 3rd strip line (C14) and the first bimodulus resonant cavity (B1) the 4th strip line (C15) form the first bimodulus resonant cavity (B1), first bimodulus resonant cavity (B1) first strip line (C3) is positioned at the top of interface input inductance (C2), and the two intercouples; First bimodulus resonant cavity (B1) second strip line (C4) is positioned at the top of the first bimodulus resonant cavity (B1) first strip line (C3), and the two intercouples; First bimodulus resonant cavity (B1) the 3rd strip line (C14) is positioned at the below of interface input inductance (C2), and the two intercouples; First bimodulus resonant cavity (B1) the 4th strip line (C15) is positioned at the below of the first bimodulus resonant cavity (B1) the 3rd strip line (C14), and the two intercouples;
The other end of the first bimodulus resonant cavity (B1) first strip line (C3) is connected with the first attaching strap-like line (C5), and the other end of the first bimodulus resonant cavity (B1) the 3rd strip line (C14) is connected with the second attaching strap-like line (C16);
Second bimodulus resonant cavity (B2) first strip line (C8), second bimodulus resonant cavity (B2) second strip line (C9), second bimodulus resonant cavity (B2) the 3rd strip line (C17) and the second bimodulus resonant cavity (B2) the 4th strip line (C18) form the second bimodulus resonant cavity (B2), in the centre position of the first attaching strap-like line (C5), the second bimodulus resonant cavity (B2) first strip line (C8) is set, in the centre position of the second attaching strap-like line (C16), the second bimodulus resonant cavity (B2) the 4th strip line (C18) is set, second bimodulus resonant cavity (B2) second strip line (C9) is positioned at the top of the second bimodulus resonant cavity (B2) first strip line (C8), the two intercouples, second bimodulus resonant cavity (B2) the 3rd strip line (C17) is positioned at the second bimodulus resonant cavity (B2) the 4th strip line (C18) below, and the two intercouples,
3rd bimodulus resonant cavity (B3) first strip line (C10), 3rd bimodulus resonant cavity (B3) second strip line (C11), 3rd bimodulus resonant cavity (B3) the 3rd strip line (C19) and the 3rd bimodulus resonant cavity (B3) the 4th strip line (C20) form the 3rd bimodulus resonant cavity (B3), the other end of the first attaching strap-like line (C5) is connected with the 3rd bimodulus resonant cavity (B3) second strip line (C11), 3rd bimodulus resonant cavity (B3) first strip line (C10) is positioned at the top of the 3rd bimodulus resonant cavity (B3) second strip line (C11), the two intercouples, the other end of the second attaching strap-like line (C16) is connected with the 3rd bimodulus resonant cavity (B3) the 3rd strip line (C19), 3rd bimodulus resonant cavity (B3) the 4th strip line (C20) is positioned at the below of the 3rd bimodulus resonant cavity (B3) the 3rd strip line (C19), the two intercouples,
Output interface inductance (C12) is positioned at the top of the 3rd bimodulus resonant cavity (B3) the 3rd strip line (C19), and both intercouple; Output interface inductance (C12) is positioned at the below of the 3rd bimodulus resonant cavity (B3) second strip line (C11), and both intercouple;
The banded line (C7) of second cross-couplings is positioned at the positive right side of the banded line (C6) of the first cross-couplings, the two intercouples, the other end of the banded line (C7) of the second cross-couplings is connected with output interface inductance (C12), the other end of output interface inductance (C12) is connected with output internal interface (C13), and the other end exporting internal interface (C13) is arranged at the center of 50 ohmage output ports (P2).
2. miniature high-performance according to claim 1 bimodulus ultra-narrow bandwidth filter at two zero point, it is characterized in that, first bimodulus resonant cavity (B1) second strip line (C4), first bimodulus resonant cavity (B1) the 4th strip line (C15), second bimodulus resonant cavity (B2) second strip line (C9), second bimodulus resonant cavity (B2) the 3rd strip line (C17), 3rd bimodulus resonant cavity (B3) first strip line (C10) and the 3rd bimodulus resonant cavity (B3) the 4th strip line (C20) are deviating from the side ground connection respectively of the banded line (C6) of the first cross-couplings.
3. miniature high-performance according to claim 1 bimodulus ultra-narrow bandwidth filter at two zero point, it is characterized in that, the first bimodulus resonant cavity (B1) and the 3rd bimodulus resonant cavity (B3) are about the second bimodulus resonant cavity (B2) even symmetry; First bimodulus resonant cavity (B1), the second bimodulus resonant cavity (B2) and the 3rd bimodulus resonant cavity (B3) itself are laterally zygomorphic geometry separately simultaneously.
4. miniature high-performance according to claim 1 bimodulus ultra-narrow bandwidth filter at two zero point, it is characterized in that, described structure all adopts LTCC processes to realize.
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| CN102006026A (en) * | 2010-11-24 | 2011-04-06 | 南京理工大学 | Ku-wave band and ultra-narrow band micro band-pass filter with low loss and high inhibition |
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| CN103413993A (en) * | 2013-08-01 | 2013-11-27 | 南京理工大学 | Distributed miniature band-pass balance filter |
| CN103441316A (en) * | 2013-08-01 | 2013-12-11 | 南京理工大学 | Minitype band-pass filter with amplitude equalization function |
| CN103457007A (en) * | 2013-09-06 | 2013-12-18 | 南京理工大学 | High-performance distributed 3100-3400 MHz miniature band-pass filter |
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- 2014-09-12 CN CN201410467081.6A patent/CN104241748B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102006026A (en) * | 2010-11-24 | 2011-04-06 | 南京理工大学 | Ku-wave band and ultra-narrow band micro band-pass filter with low loss and high inhibition |
| CN102006027A (en) * | 2010-11-24 | 2011-04-06 | 南京理工大学 | C-band low-loss and high-inhibition micro band-pass filter |
| CN103117428A (en) * | 2013-02-05 | 2013-05-22 | 江苏奕扬电子科技股份有限公司 | Miniature band-pass filter of 60G millimeter waves |
| CN103413993A (en) * | 2013-08-01 | 2013-11-27 | 南京理工大学 | Distributed miniature band-pass balance filter |
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| CN103457007A (en) * | 2013-09-06 | 2013-12-18 | 南京理工大学 | High-performance distributed 3100-3400 MHz miniature band-pass filter |
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