CN104238260A - Method for improving process window of semiconductor device - Google Patents
Method for improving process window of semiconductor device Download PDFInfo
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- CN104238260A CN104238260A CN201310242416.XA CN201310242416A CN104238260A CN 104238260 A CN104238260 A CN 104238260A CN 201310242416 A CN201310242416 A CN 201310242416A CN 104238260 A CN104238260 A CN 104238260A
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Abstract
The invention relates to a method for improving a process window of a semiconductor device. The method at least comprises the steps of (1) setting a first target outline pattern: executing optical proximity correction according to a first target outline pattern setting mask plate to obtain the first target outline pattern; (2) setting a final target outline pattern: executing the optical proximity correction according to a final target outline pattern setting mask plate to obtain the final target outline pattern, wherein the final target outline pattern is square or circular. According to the method disclosed by the invention, the method which only comprises one step of executing the optical proximity correction in the prior art is changed. The method comprises at least two steps; the final target outline obtained by the method is square or circular; compared with the process window of an existing technical device, the process window is more excellent in performance, and the device performance is improved; the method can be used for etching a through hole or a contact hole but is not limited to the through hole or the contact hole.
Description
Technical field
The present invention relates to semiconductor applications, particularly, the present invention relates to a kind of method improving semiconductor device technology window.
Background technology
Ic manufacturing technology is a complicated technique, and technology innovation is very fast.The key parameter characterizing ic manufacturing technology is minimum feature size, i.e. critical size (critical dimension, CD), along with the development of semiconductor technology, the critical size of device constantly reduces, and the reduction just because of critical size just makes each chip to be arranged 1,000,000 devices becomes possibility.
Photoetching technique is the driving force of integrated circuit fabrication process development, is also one of technology of complexity the most.Relatively and other single manufacturing technology, the development of raising to integrated circuit of photoetching technique is significant.Before photoetching process starts, first need pattern to copy on mask plate by particular device, then by the light of lithographic equipment generation specific wavelength, the patterning on mask plate is copied on the silicon chip of production chip.But due to reducing of dimensions of semiconductor devices, can distortion phenomenon there is by design transfer to the process of silicon chip, if do not eliminate the failure that this distortion phenomenon can cause whole manufacturing technology.Therefore, optics can be carried out to described mask plate close on correction (Optical Proximity Correction to solve described problem, OPC), described OPC method is carries out pre-service before photoetching to described lithography mask version, revise in advance, the amount that amendment is compensated just in time can compensate the optical proximity effect that exposure system causes.
Along with constantly reducing of dimensions of semiconductor devices, need when forming electrical connection to form through hole (via) or contact hole (contact), wherein said through hole (via) or contact hole (contact) need to carry out OPC correction in forming process, method of the prior art as shown in Figure 1, first, select objective contour numerical value as mask plate critical size (mask CD), carry out simulating (simulation) with described mask plate, obtain simulating profile for the first time, then empirical value adjustment is carried out according to first time simulation profile errors, then the second mask plate critical size is obtained, then second time simulation is carried out, obtain second time and simulate profile, then OPC calculating is carried out according to profile errors, obtain the 3rd mask plate critical size, then the convergence of continuous several times is carried out in the described operation that circulates, correct, eventually pass n simulation, finally obtain objective contour, but mask plate described in prior art is mostly rectangle (Rectangle), it is long and wide and unequal, described mask plate critical size is compared with foursquare mask plate (Square mask), its critical size is little, device performance is reduced, therefore need to improve current OPC method, to eliminate the problems referred to above, improve device performance and yield.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in embodiment part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The invention provides a kind of method improving semiconductor device technology window, described method at least comprises:
1) set first object contour patterns, according to described first object contour patterns setting mask plate, perform optics and close on correction step, obtain described first object contour patterns;
2) set final goal contour patterns, according to described final goal contour patterns setting mask plate, perform optics and close on correction step, obtain described final goal contour patterns;
Wherein, described final goal contour patterns is in square or circular.
As preferably, in described step 2) also comprise at least one step before, in at least one step described, each step all sets an objective contour pattern, according to described objective contour pattern setting mask plate, perform optics and close on correction step, obtain the described objective contour pattern set in each step described.As preferably, in described step 1), optics closes on and revises step and comprise following sub-step:
1-1) set the first mask plate according to described first object contour patterns, select the first mask plate to simulate, obtain the first simulation contour patterns;
1-2) according to described first simulation contour patterns and described first object contour patterns error, described first mask plate is revised, obtains the second mask plate;
1-3) select described second mask plate to simulate, obtain the second simulation contour patterns;
1-4) simulate the error of contour patterns and described first object contour patterns according to described second, carry out optics and close on corrected Calculation, obtain the 3rd mask plate;
1-5) simulate according to described 3rd mask plate, obtain the 3rd simulation contour patterns;
As preferably, if described 3rd simulation contour patterns is identical with described first object contour patterns, then stop revising;
If described 3rd simulation contour patterns is not identical with described first object contour patterns, then perform step 1-6) repeat 1-1)-1-5), identical with described first object contour patterns to simulating contour patterns described in this step 1).
As preferably, in described step 1), first object contour patterns is oval or rectangle, and its minor axis or width are X, and major axis or length are Y, wherein Y>X, and closes on to revise in step at described optics and increase X gradually, reduces Y.
As preferably, described first mask plate, the second mask plate and the 3rd mask plate are square or rectangle.
As preferably, described step 2) in optics close on and revise step and comprise following sub-step:
2-1) according to final first mask plate of described final goal contour patterns setting, select final first mask plate to simulate, obtain final first simulation contour patterns;
2-2) simulate the error of contour patterns and described final goal contour patterns according to described final first, described final first mask plate is revised, obtains final second mask plate;
2-3) select described final second mask plate to simulate, obtain final second simulation contour patterns;
2-4) simulate the error of contour patterns and described final goal contour patterns according to described final second, carry out optics and close on corrected Calculation, obtain final 3rd mask plate;
2-5) simulate according to described final 3rd mask plate, obtain final 3rd simulation contour patterns;
As preferably, if described 3rd simulation contour patterns is identical with described final goal contour patterns, then stop revising;
If described 3rd simulation contour patterns is not identical with described final goal contour patterns, then execution step 2-6) repeat 1-1)-1-5), to step 2) described in simulate contour patterns identical with described final goal contour patterns.
As preferably, described final first mask plate, final second mask plate and final 3rd mask plate are square or rectangle.
As preferably, after described step 1), described X becomes large, in described step 2) in, closing on to revise in step at described optics keeps described X constant, continues to reduce described Y, to described X=Y, obtain in square or circular described final goal contour patterns, to improve the process window of device.
As preferably, described final goal contour patterns is through hole or contact hole.
The present invention changes in prior art and only comprises the method that a step carries out Optical Proximity Correction, described method comprises at least two steps, wherein set an objective contour in each step, objective contour wherein in last step is final goal profile, the ideal profile obtained by described method is for square or circular, more excellent relative to the process window performance of prior art device, device performance improves, described method may be used for the etching of through hole or contact hole, but is not limited to through hole or contact hole.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
Fig. 1 utilizes mask plate to carry out the process flow diagram of OPC in prior art;
Fig. 2 utilizes mask plate to carry out the process flow diagram of OPC in the embodiment of the invention;
Fig. 3 is that the present invention utilizes mask plate to carry out the process flow diagram of OPC;
Fig. 4 be in the present invention in utilize mask plate to carry out the process chart of OPC.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
Should give it is noted that term used here is only to describe specific embodiment, and be not intended to restricted root according to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative be also intended to comprise plural form.In addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Now, describe in more detail with reference to the accompanying drawings according to exemplary embodiment of the present invention.But these exemplary embodiments can multiple different form be implemented, and should not be interpreted as being only limited to the embodiments set forth herein.Should be understood that, providing these embodiments to be of the present inventionly disclose thorough and complete to make, and the design of these exemplary embodiments fully being conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, use the element that identical Reference numeral represents identical, thus will omit description of them.
The invention provides the method improving semiconductor device technology window, described method at least comprises:
1) set first object contour patterns, according to described first object profile setting mask plate, perform optics and close on correction step, obtain described first object contour patterns;
2) set final goal contour patterns, according to described final goal profile setting mask plate, perform optics and close on correction step, obtain described final goal contour patterns;
Wherein, described final goal contour patterns is in square or circular.
As preferably, in described step 2) also comprise multiple step before, in described multiple step, wherein each step all sets an objective contour pattern, according to described objective contour setting mask plate, perform optics and close on correction step, obtain the described objective contour pattern set in each step described.
The method of improvement semiconductor device technology window of the present invention is different with the method for a step in prior art, described method comprises at least two steps, can comprise multiple step, the number of described step is not limited to a certain numerical range, can carry out as required.
Wherein, in described multiple step, the equal target setting contour patterns of each step, then set rational mask plate critical size according to described objective contour pattern, carry out optics and close on correction, obtain the objective contour pattern set in this step, the objective contour pattern wherein set in last step is final goal profile, in order to improve the performance of device, described final goal contour patterns is the figure of upright (Squared), such as square or circular.
Embodiment 1
Below in conjunction with accompanying drawing 2, one of the present invention is preferred embodiment further described.
As shown in Figure 2, the method for described improvement semiconductor device technology window comprises two steps, wherein comprises again n sub-steps in each step.
First, in step 1), set first object contour patterns, according to described first object profile setting mask plate, perform optics and close on correction step, obtain described first object contour patterns;
Described step 1) comprises following sub-step:
1-1) set the first mask plate according to described first object profile, as shown in Figure 2, described first mask plate is square, comprise square or rectangle, the critical size of described mask plate is X1, Y1, wherein X1 is the length of described first mask plate, described Y1 is the wide of described first mask plate, the first mask plate is selected to simulate, obtain the first simulation contour patterns, wherein said first simulation contour patterns is oval, wherein, its minor axis or width are X, major axis or length are Y, wherein Y>X, and close on to revise in step at described optics and increase X gradually, reduce Y,
1-2) simulate the error of contour patterns and described first object profile according to described first, described first mask plate is revised, obtains the second mask plate;
1-3) select described second mask plate to simulate, obtain the second simulation contour patterns;
1-4) according to described second simulation contour patterns and described first object profile errors, carry out optics and close on corrected Calculation, obtain the 3rd mask plate;
1-5) simulate according to described 3rd mask plate, obtain the 3rd simulation contour patterns;
As preferably, if described 3rd simulation contour patterns is identical with described first object contour patterns, then stop revising;
If described 3rd simulation contour patterns is not identical with described first object contour patterns, more multi-step can be comprised in this OPC process, repeat step 1-1)-1-5), the n-th mask plate to step 1), when obtaining plan contour patterns after described n-th mask plate is simulated and being identical with described first object profile, stop described step 1).
As preferably, in described step 1), first object contour patterns is oval or rectangle, and its minor axis or width are X, major axis or length are Y, wherein Y>X, at described step 1-1)-1-n) process in by optics close on revise step increase X gradually, reduce Y.
Then step 2 is performed) setting final goal contour patterns, according to described final goal profile setting mask plate, perform optics and close on correction step, obtain described final goal contour patterns;
Wherein, described final goal contour patterns is in square or circular.
Described step 2) in optics close on revise step comprise following sub-step:
2-1) according to final first mask plate of described final goal profile setting, final first mask plate is selected to simulate, obtain final first simulation contour patterns, wherein after described step 1), described X becomes large, in this sub-step described, closing on to revise in step at described optics keeps described X constant, continues to reduce described Y, to described X=Y, obtain in square or circular described final goal contour patterns, to improve the process window of device;
2-2) according to described final first simulation contour patterns and described final goal profile errors, described final first mask plate is revised, obtains final second mask plate;
2-3) select described final second mask plate to simulate, obtain final second simulation contour patterns, keep described X constant in described second simulation contour patterns, continue to reduce described Y, the gap between described X and Y reduces;
2-4) according to described final second simulation contour patterns and described final first object profile errors, carry out optics and close on corrected Calculation, obtain final 3rd mask plate;
2-5) simulate according to described final 3rd mask plate, obtain final 3rd simulation contour patterns, keep described X constant in described second simulation contour patterns, continue to reduce described Y, the gap between described X and Y is less;
As preferably, if described 3rd simulation contour patterns is identical with described final goal contour patterns, then stop revising; If described 3rd simulation contour patterns is not identical with described final goal contour patterns, more multi-step can be comprised in this OPC process, repeat step 2-1)---2-5), to step 2) in the n-th mask plate, after described n-th mask plate is simulated, obtain intending contour patterns identical with described final goal profile, to during described X=Y, obtain in square or circular described final goal contour patterns, to improve the process window of device, then stop described step 2).
Embodiment 2
Below in conjunction with accompanying drawing 3, one of the present invention is preferred embodiment further described.
As shown in Figure 3, the method for described improvement semiconductor device technology window comprises n step, wherein comprises again n sub-steps in each step.
First, in step 1), set first object contour patterns, according to described first object profile setting mask plate, perform optics and close on correction step, obtain described first object contour patterns;
Described step 1) comprises following sub-step:
1-1) set the first mask plate according to described first object profile, as shown in Figure 3, described first mask plate is square, comprise square or rectangle, the critical size of described mask plate is X1, Y1, wherein X1 is the length of described first mask plate, described Y1 is the wide of described first mask plate, the first mask plate is selected to simulate, obtain the first simulation contour patterns, wherein said first simulation contour patterns is oval, wherein, its minor axis or width are X, major axis or length are Y, wherein Y>X, and close on to revise in step at described optics and increase X gradually, reduce Y,
1-2) simulate the error of contour patterns and described first object profile according to described first, described first mask plate is revised, obtains the second mask plate;
1-3) select described second mask plate to simulate, obtain the second simulation contour patterns;
1-4) according to described second simulation contour patterns and described first object profile errors, carry out optics and close on corrected Calculation, obtain the 3rd mask plate;
1-5) simulate according to described 3rd mask plate, obtain the 3rd simulation contour patterns;
More multi-step can be comprised in this OPC process, repeat step 1-1)-1-5), the n-th mask plate to step 1), when obtaining plan contour patterns after described n-th mask plate is simulated and being identical with described first object profile, stops described step 1).
As preferably, in described step 1), first object contour patterns is oval or rectangle, and its minor axis or width are X, major axis or length are Y, wherein Y>X, at described step 1-1)-1-n) process in by optics close on revise step increase X gradually, reduce Y.
Then step 2 is performed) set the second objective contour pattern, according to described second objective contour setting mask plate, perform optics and close on correction step, obtain described second objective contour pattern;
Described step 2) in optics close on revise step comprise following sub-step:
2-1) according to the first mask plate in described second objective contour setting second step, this first mask plate is selected to simulate, obtain the first simulation contour patterns in second step, wherein after described step 1), described X becomes large, in this sub-step described, closes in correction step keep described X constant at described optics, continue reduce described Y or increase X, continue to reduce described Y;
2-2) according to step 2-1) in the first simulation contour patterns and error of described second objective contour, the first mask plate in described second step is revised, obtains the second mask plate in second step;
2-3) select the second mask plate in described second step to simulate, obtain the second simulation contour patterns in second step, described in this second simulation contour patterns, X continues to become large, and continue to reduce described Y, the gap between described X and Y reduces;
2-4) according to the second simulation contour patterns and described second objective contour error in described second step, carry out optics and close on corrected Calculation, obtain the 3rd mask plate in second step;
2-5) simulate according to the 3rd mask plate in described second step, obtain the 3rd simulation contour patterns in second step, described in the 3rd simulation contour patterns, X continues to become large, and continue to reduce described Y, the gap between described X and Y is less;
In described step 2) after also comprise multiple step, described multiple step and step 1), step 2) substantially identical, an objective contour pattern is all set in each step, unlike, keep described X constant in the simulation contour patterns obtained when carrying out Optical Proximity Correction in described step, continue to reduce described Y, the gap between described X and Y reduces.
Then step n is performed) set final goal contour patterns, according to described final goal profile setting mask plate, perform optics and close on correction step, obtain described final goal contour patterns;
Wherein, described final goal contour patterns is in square or circular.
Described step n) in optics close on revise step comprise following sub-step:
N-1) according to final first mask plate of described final goal profile setting, final first mask plate is selected to simulate, obtain final first simulation contour patterns, wherein after described step 1), described X becomes large, in this sub-step described, closing on to revise in step at described optics keeps described X constant, continues to reduce described Y, to described X=Y, obtain in square or circular described final goal contour patterns, to improve the process window of device;
N-2) according to described final first simulation contour patterns and described final goal profile errors, described final first mask plate is revised, obtains final second mask plate;
N-3) select described final second mask plate to simulate, obtain final second simulation contour patterns, keep described X constant in described second simulation contour patterns, continue to reduce described Y, the gap between described X and Y reduces;
N-4) according to described final second simulation contour patterns and described final first object profile errors, carry out optics and close on corrected Calculation, obtain final 3rd mask plate;
N-5) simulate according to described final 3rd mask plate, obtain final 3rd simulation contour patterns, keep described X constant in described second simulation contour patterns, continue to reduce described Y, the gap between described X and Y is less;
More multi-step can be comprised in this OPC process, repeat step n-1)---n-5), to step n) in the n-th mask plate, after described n-th mask plate is simulated, obtain intending contour patterns identical with described final goal profile, to during described X=Y, obtain in square or circular described final goal contour patterns, to improve the process window of device, then stop described step n).
The present invention changes in prior art and only comprises the method that a step carries out Optical Proximity Correction, described method comprises at least two steps, wherein set an objective contour in each step, objective contour wherein in last step is final goal profile, the ideal profile obtained by described method is for square or circular, more excellent relative to the process window performance of prior art device, device performance improves, described method may be used for the etching of through hole or contact hole, but is not limited to through hole or contact hole.
Fig. 4 be in the present invention in utilize mask plate to carry out the process chart of OPC, specifically comprise the following steps:
1) set first object contour patterns, according to described first object contour patterns setting mask plate, perform optics and close on correction step, obtain described first object contour patterns;
2) set final goal contour patterns, according to described final goal contour patterns setting mask plate, perform optics and close on correction step, obtain described final goal contour patterns;
Wherein, described final goal contour patterns is in square or circular.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (11)
1. improve a method for semiconductor device technology window, described method at least comprises:
1) set first object contour patterns, according to described first object contour patterns setting mask plate, perform optics and close on correction step, obtain described first object contour patterns;
2) set final goal contour patterns, according to described final goal contour patterns setting mask plate, perform optics and close on correction step, obtain described final goal contour patterns;
Wherein, described final goal contour patterns is in square or circular.
2. method according to claim 1, it is characterized in that, in described step 2) also comprise at least one step before, in at least one step described, each step all sets an objective contour pattern, according to described objective contour pattern setting mask plate, perform optics and close on correction step, obtain the described objective contour pattern set in each step described.
3. method according to claim 1, is characterized in that, in described step 1) optics close on revise step comprise following sub-step:
1-1) set the first mask plate according to described first object contour patterns, select the first mask plate to simulate, obtain the first simulation contour patterns;
1-2) according to described first simulation contour patterns and described first object contour patterns error, described first mask plate is revised, obtains the second mask plate;
1-3) select described second mask plate to simulate, obtain the second simulation contour patterns;
1-4) simulate the error of contour patterns and described first object contour patterns according to described second, carry out optics and close on corrected Calculation, obtain the 3rd mask plate;
1-5) simulate according to described 3rd mask plate, obtain the 3rd simulation contour patterns.
4. method according to claim 3, is characterized in that, if described 3rd simulation contour patterns is identical with described first object contour patterns, then stops revising;
If described 3rd simulation contour patterns is not identical with described first object contour patterns, then perform step 1-6) repeat 1-1)-1-5), identical with described first object contour patterns to simulating contour patterns described in this step 1).
5. the method according to claim 1 or 3, it is characterized in that, in described step 1), first object contour patterns is oval or rectangle, its minor axis or width are X, major axis or length are Y, wherein Y>X, and close on to revise in step at described optics and increase X gradually, reduce Y.
6. method according to claim 3, is characterized in that, described first mask plate, the second mask plate and the 3rd mask plate are square or rectangle.
7. method according to claim 1, is characterized in that, described step 2) in optics close on revise step comprise following sub-step:
2-1) according to final first mask plate of described final goal contour patterns setting, select final first mask plate to simulate, obtain final first simulation contour patterns;
2-2) simulate the error of contour patterns and described final goal contour patterns according to described final first, described final first mask plate is revised, obtains final second mask plate;
2-3) select described final second mask plate to simulate, obtain final second simulation contour patterns;
2-4) simulate the error of contour patterns and described final goal contour patterns according to described final second, carry out optics and close on corrected Calculation, obtain final 3rd mask plate;
2-5) simulate according to described final 3rd mask plate, obtain final 3rd simulation contour patterns.
8. method according to claim 7, is characterized in that, if described 3rd simulation contour patterns is identical with described final goal contour patterns, then stops revising;
If described 3rd simulation contour patterns is not identical with described final goal contour patterns, then execution step 2-6) repeat 2-1)-2-5), to step 2) described in simulate contour patterns identical with described final goal contour patterns.
9. method according to claim 7, is characterized in that, described final first mask plate, final second mask plate and final 3rd mask plate are square or rectangle.
10. method according to claim 5, it is characterized in that, after described step 1), described X becomes large, in described step 2) in, close in correction step at described optics and keep described X constant, continue to reduce described Y, to described X=Y, obtain in square or circular described final goal contour patterns, to improve the process window of device.
11. according to the method one of claim 1-10 Suo Shu, and described final goal contour patterns is through hole or contact hole.
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| CN104238260B (en) | 2019-04-09 |
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