CN104223536A - Anti-static memory anti-radiation slightly-fragrant fabric - Google Patents
Anti-static memory anti-radiation slightly-fragrant fabric Download PDFInfo
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- CN104223536A CN104223536A CN201410464497.2A CN201410464497A CN104223536A CN 104223536 A CN104223536 A CN 104223536A CN 201410464497 A CN201410464497 A CN 201410464497A CN 104223536 A CN104223536 A CN 104223536A
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Abstract
The invention relates to an anti-static memory anti-radiation slightly-fragrant fabric. The fabric comprises a polyurethane film (1), a fabric substrate and a woven fabric layer (5) in sequence from outside to inside, wherein the fabric substrate comprises warps (2) and wefts (3); a base layer is compounded on the back side of the woven fabric layer; PTT (Polytrimethylene Terephthalate) memory color yarns adopted in the base layer are warp direction yarns; PET (Polyethylene Terephthalate) polyester fine-denier profiled bright yarns are taken as weft direction yarns; the warp direction yarns and the weft direction yarns are woven into the fabric by adopting a calvary twill organization with 3/1 twills or 1/1 tabbies or 3/1 twills+1/1 tabbies. The anti-static memory anti-radiation slightly-fragrant fabric disclosed by the invention is slightly-fragrant, has high fragrance durability, a very good anti-static function, a memory function and anti-static property, and is resistant to radiation.
Description
Technical field
The present invention relates to a kind of fabric.Belong to technical field of textile fabric.
Background technology
Synthetic fibers, yarn or fabric easily produce electrostatic due to reasons such as frictions in processing or use procedure.Fiber with electrostatic easily adsorbs dust and forms dirt, and in process, the attraction of electric charge or repulsion also can strengthen the difficulty of processing.In spinning process, electrostatic can cause poor, the easy winding of coherent between fiber and broken end, and carrying out smoothly of impact spinning, when the electrostatic potential of gathering is higher than 500V, very easily produces spark because discharging and cause fire, along with the raising of people's living standard, the requirement of people to fabric is also more and more higher, women favors fragrant fabric very much, the mode of stacte generally taked by this kind of fabric, namely the leaf of fragrant plant, flowers etc. and clothing are put together, fragrance volatilizing is made to penetrate into the space of clothes fiber, reach the object of lasting, there is perfume finally, face powder etc., just these are sprinkled upon on clothing, or essence is adhered on the textile, but the aroma type fabric that these methods obtain, fragrance remaining time is short, after washing, fragrance will disappear, persistence is poor, simultaneously because the pungent taste of essence is heavier.Reduce the comfortableness of fabric.In addition, the fabric of traditional making garment body has memory function, antistatic and radiation-proof effect time different.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, provide a kind of micro-fragrant fabric of memory Antistatic radiation-proof of antistatic, this fabric has micro-Xiang Gong energy, and lasting fragrance is strong, and has good electrostatic-proof function.
The object of the present invention is achieved like this:
A kind of micro-fragrant fabric of memory Antistatic radiation-proof of antistatic, be characterized in: described fabric comprises polyurethane film, fabric substrate and woven layer from outside to inside successively, described fabric substrate comprises warp thread and weft yarn, the twills matrix that fabric substrate is become with weft yarns by warp thread, carbon fiber is inweaved in described fabric substrate, be provided with the some groups of micro-sachets fixed by adhesive in the space of described woven layer, the described outside often organizing micro-sachet is equipped with watertight composition; The described woven layer back side is compounded with a basic unit, and described basic unit adopts PTT memory colour silk to be warp-wise silk, adopts PET dacron fine-denier abnormity bright yarn to be broadwise silk; The structure that described warp-wise silk and broadwise silk adopt the cavalryman of 3/1 twill or 1/1 plain weave or 3/1 twill+1/1 plain weave tiltedly to organize is woven into fabric.
The micro-fragrant fabric of memory Antistatic radiation-proof of a kind of antistatic of the present invention, its carbon fiber is filament fiber.
The micro-fragrant fabric of memory Antistatic radiation-proof of a kind of antistatic of the present invention, its warp thread and weft yarn all select common Tynex or polyester filament.
The micro-fragrant fabric of memory Antistatic radiation-proof of a kind of antistatic of the present invention, its woven layer is DTY macromolecule elater fabric.
Compared with prior art, the invention has the beneficial effects as follows:
1, micro-sachet is fixed in the space of fabric substrate by adhesive by the present invention, ensures the persistence of fragrance, and when being drenched by rainwater or with wet cloth wiping, fragrance also can not thin out or disappearance, and result of use is good.
2, the present invention effectively can reduce the coefficient of friction of web surface, reduces the generation of electrostatic charge in friction, has higher antistatic performance.
3, the present invention has unique memory function, there is antistatic, radiation-proof effect simultaneously, breach the limitation that common memory face fabric pattern is single, there is cloth cover third dimension strong, the effect that outstanding broadwise has the glittering luminescence of light profiled filaments and the color silk color of stainless steel to glitter and cloth style are a kind of high-grade clothing body fabrics.
Accompanying drawing explanation
Fig. 1 is the structural representation of the micro-fragrant fabric of memory Antistatic radiation-proof of a kind of antistatic of the present invention.
In figure:
Polyurethane film 1,
Weft yarn 2,
Warp thread 3,
Carbon fiber 4,
Woven layer 5,
Micro-sachet 6.
Detailed description of the invention
See Fig. 1, the present invention relates to a kind of micro-fragrant fabric of memory Antistatic radiation-proof of antistatic, comprise polyurethane film 1 successively from outside to inside, fabric substrate and woven layer 5, described fabric substrate to be interweaved the twills matrix being by warp thread 2 and weft yarn 3, because twills matrix has finer and close institutional framework compared with plain cloth matrix, thus better shielding properties is had to particulate, carbon fiber 4 is inweaved in described twills matrix, described carbon fiber 4 is filament fiber, there is good electric conductivity, contribute to the electrostatic charge dispersion that will produce, shift and neutralized by corona discharge, eliminate electric charge.
Warp thread 2 of the present invention and weft yarn 3 all select common Tynex or polyester filament, and its Main Function is the physical properties strengthening conductive fiber, thus the performance anti-static electrification that protection conductive fiber is more stable, lasting.And the inclusion be formed by weaving by polyester filament has excellent performance in the physical property such as wear-resisting, tear-resistant, again because polyester filament has fine and close yarn texture, therefore the shielding of inclusion, filter dirt performance are good.
The thickness of described polyurethane film 1 is 0.01 ~ 0.02mm, and the thickness of the preferred described polyurethane film 1 of the present invention is 0.015mm.Polyurethane film 1 mainly adopts to be extruded, to roll and prepared by the technique such as blowing, belong to environmental protection macromolecule polymer, polyurethane film equally has remarkable high-tension, high-tensile strength, water-proof breathable properties, obdurability and ageing-resistant performance with polyurethane elastomer, possess ventilative, fungi-proofing, liquidproof through advantages such as non-degradable under, long-term washing and wet sterilization condition and reasonable prices simultaneously, ensure that inclusion has good comfort and excellent shielding, antistatic performance.
Be provided with the some groups of micro-sachets 6 fixed by adhesive in the space of described woven layer 5, the described outside often organizing micro-sachet 6 is equipped with watertight composition, and described micro-sachet 6 is spheric granules, the diameter of micro-sachet 6 is 50 μm, spheric granules structure is simple, and be convenient to built-in, result of use is good; Described woven layer 5 is DTY macromolecule elater fabric, and DTY macromolecule elater fabric has high flexibility and high adsorption, and result of use is good, and fragrance can be lasting, and on the woven layer 5 of every square metre, the content of micro-sachet 6 is 2.7g.
By adhesive, some groups of micro-sachets 6 are fixed in the space of woven layer 5, during use, because the woven layer 5 adopting DTY macromolecule elater fabric to make has high flexibility and high adsorption, thus make DTY macromolecule elater fabric make micro-sachet 6 progressively broken in friction, washing, thus micro-sachet 6 is adsorbed on woven layer 5 for a long time.
The described woven layer back side is compounded with a basic unit, and described basic unit adopts PTT memory colour silk to be warp-wise silk, adopts PET dacron fine-denier abnormity bright yarn to be broadwise silk; The structure that described warp-wise silk and broadwise silk adopt the cavalryman of 3/1 twill or 1/1 plain weave or 3/1 twill+1/1 plain weave tiltedly to organize is woven into fabric.
Claims (4)
1. the micro-fragrant fabric of the memory Antistatic radiation-proof of an antistatic, it is characterized in that: described fabric comprises polyurethane film (1), fabric substrate and woven layer (5) from outside to inside successively, described fabric substrate comprises warp thread (2) and weft yarn (3), the twills matrix that fabric substrate is woven into by warp thread (2) and weft yarn (3), carbon fiber (4) is inweaved in described fabric substrate, be provided with the some groups of micro-sachets (6) fixed by adhesive in the space of described woven layer (5), the described outside often organizing micro-sachet (6) is equipped with watertight composition; The described woven layer back side is compounded with a basic unit, and described basic unit adopts PTT memory colour silk to be warp-wise silk, adopts PET dacron fine-denier abnormity bright yarn to be broadwise silk; The structure that described warp-wise silk and broadwise silk adopt the cavalryman of 3/1 twill or 1/1 plain weave or 3/1 twill+1/1 plain weave tiltedly to organize is woven into fabric.
2. the micro-fragrant fabric of the memory Antistatic radiation-proof of a kind of antistatic according to claim 1, is characterized in that: described carbon fiber (4) is filament fiber.
3. the micro-fragrant fabric of the memory Antistatic radiation-proof of a kind of antistatic according to claim 1, is characterized in that: described warp thread (2) and weft yarn (3) all select common Tynex or polyester filament.
4. the micro-fragrant fabric of the memory Antistatic radiation-proof of a kind of antistatic according to claim 1, is characterized in that: described woven layer (5) is DTY macromolecule elater fabric.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410464497.2A CN104223536A (en) | 2014-09-15 | 2014-09-15 | Anti-static memory anti-radiation slightly-fragrant fabric |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410464497.2A CN104223536A (en) | 2014-09-15 | 2014-09-15 | Anti-static memory anti-radiation slightly-fragrant fabric |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104223536A true CN104223536A (en) | 2014-12-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410464497.2A Pending CN104223536A (en) | 2014-09-15 | 2014-09-15 | Anti-static memory anti-radiation slightly-fragrant fabric |
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| CN (1) | CN104223536A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105297239A (en) * | 2015-09-17 | 2016-02-03 | 无锡市长安曙光手套厂 | Fragrance-releasing fabric and preparation method for same |
| CN114045595A (en) * | 2021-11-02 | 2022-02-15 | 广东鹏运实业有限公司 | Antistatic and anti-electromagnetic radiation composite fabric and preparation method thereof |
-
2014
- 2014-09-15 CN CN201410464497.2A patent/CN104223536A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105297239A (en) * | 2015-09-17 | 2016-02-03 | 无锡市长安曙光手套厂 | Fragrance-releasing fabric and preparation method for same |
| CN114045595A (en) * | 2021-11-02 | 2022-02-15 | 广东鹏运实业有限公司 | Antistatic and anti-electromagnetic radiation composite fabric and preparation method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141224 |