CN104221163A - Method and apparatus for photovoltaic device manufacture - Google Patents
Method and apparatus for photovoltaic device manufacture Download PDFInfo
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- CN104221163A CN104221163A CN201380006428.0A CN201380006428A CN104221163A CN 104221163 A CN104221163 A CN 104221163A CN 201380006428 A CN201380006428 A CN 201380006428A CN 104221163 A CN104221163 A CN 104221163A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A apparatus and method for manufacturing a photovoltaic module includes components for heating the module and applying an electrical bias to the module to improve photovoltaic module performance and manufacture multiple photovoltaic modules with similar performance.
Description
This application claims the 61/589th in submission on January 23rd, 2012, the priority of No. 449 U.S. Provisional Patent Application, its full content is contained in this by reference.The application is also part continuation application and requires the 13/035th in submission on February 25th, 2011, the priority of No. 594 U. S. applications, this U.S. Application claims on March 1st, 2010 submit to the 61/309th, the priority of No. 064 U.S. Provisional Application, the full content of each application in this U. S. application and U.S. Provisional Application is contained in this by reference.The application is also part continuation application and requires the 13/615th in submission on September 14th, 2012, the priority of No. 815 U. S. applications, this U.S. Application claims on September 26th, 2011 submit to the 61/539th, the priority of No. 314 U.S. Provisional Applications, the full content of each application in this U. S. application and U.S. Provisional Application is contained in this by reference.
Technical field
The present invention relates to photovoltaic devices and the method for the manufacture of photovoltaic devices.
Background technology
Typical photovoltaic (PV) device is the PV module that light radiation can be converted to electric current.Typical PV module comprises two conductive electrodes be clipped between a series of semiconductor layer, thus provides connection (junction) at opto-electronic conversion nidus.
Can be formed in optical clear substrate to the photovoltaic module in multiple PV unit by patterning.Described substrate can be any applicable transparent substrate material (such as, glass (including but not limited to soda-lime glass or float glass) or polymer (sheet or plate)).The first conductive electrode in two conductive electrodes is arranged on the top of transparent substrates.First conductive electrode can be transparent conductive oxide (TCO) layer (such as, indium tin oxide).Tco layer can be connected with the barrier layer between tco layer with transparent substrates and also can be connected by the resilient coating (providing the TCO as the first conductive electrode to pile together with tco layer) above TOC layer.Above the first conductive electrode (if be provided with resilient coating, then on resilient coating) semiconductor layer is set.Semiconductor layer can be double-deck (bi-layer), and this bilayer comprises semiconductor Window layer (such as, cadmium sulfide) and semiconductor absorption layer (such as, cadmium telluride).Above semiconductor layer, there is the second conductive electrode (that is, back contact) in order, be used for sealing the interlayer of PV module and the back cover (back cover) of support of PV module is provided.
During operation, photon through semiconductor layer and the junction be drawn onto Window layer and absorbed layer or its near.The electron-hole pair that such generation is produced by light, promotes the motion of electron-hole pair by built-in electric field, thus produces the electric current that can export from device.
Can based on the short circuit current (I confirming module
sc), open circuit voltage (V
oc), fill factor, curve factor (FF) or open cell resistance (R
oc) (being referred to as, variable) estimate the performance characteristics of PV module.Short circuit current (I
sc) be when the voltage of PV device is zero (that is, when solar cell short circuit) by the electric current of PV device; Short circuit current (I
sc) with produce and collect by produce carrier related of light and represent the maximum current that can draw from PV device.Open circuit voltage (V
oc) be the value of the maximum voltage available determined from PV device, open circuit voltage (V
oc) when to occur in electric current be zero; Open circuit voltage (V
oc) be the measured value of the amount (the amount of recombination) of recombinating in PV device.Fill factor, curve factor (FF) determines value from the maximum power of PV device and the maximum power be defined as from PV device and V
ocand I
scproduct between ratio; Higher voltage provides higher available FF.Open cell resistance (R
oc) be the value that the resistance provided from open circuit PV device is provided.
During the manufacture of PV module, the little change of technological parameter can cause the PV module with different performance characteristics (different performance characteristics is measured by testing and determine above-mentioned performance variable).Because the performance of PV module array can be dependent on each PV module of producing according to product specification, so undesirably there is different performance characteristicses with design.Therefore, expect that manufacture shows the PV module of similar performance characteristics when time during PV module is arranged on place (field).In addition, the PV module keeping similar performance characteristics in the life expectancy process of PV module is expected to be manufactured on.Expect during manufacture a kind of and/or test after manufacturing and regulate the effective ways of PV module.
Accompanying drawing explanation
Fig. 1 is the equipment for the manufacture of PV module.
Fig. 2 is the bias voltage instrument for electrical bias being applied to PV module.
Fig. 3 is the equipment for the manufacture of PV module.
Fig. 4 is the example of the electrical bias waveform with constant current.
Fig. 5 is the example of the electrical bias waveform with alternating current.
Fig. 6 illustrates the flow chart that can be used in the method manufacturing PV module.
Fig. 7 is the sectional view of prototype PV module.
Fig. 8 illustrates the flow chart that can be used in the method manufacturing PV module.
Fig. 9 shows the equipment for processing multiple PV module.
Figure 10 shows the equipment for processing multiple PV module.
Embodiment
In next detailed description, have references to and form a part of the present invention and the accompanying drawing that illustrative specific embodiment of the present invention is shown, wherein, illustrative specific embodiment of the present invention provide a kind of manufacture PV module time for testing and regulate the system of PV module.Fully describe in detail these embodiments to enable those skilled in the art to manufacture and use them, it will also be understood that, without departing from the spirit and scope of the present invention, can to disclosed specific embodiment make structural, in logic or change in program.In the accompanying drawings, identical label indicates identical feature.
Fig. 1 shows a part for equipment 100, and equipment 100 can be can be used in electrical bias and temperature to regulate (optional, Illumination adjusting) to be applied to PV module 105 production line of PV module 105 or a part for independent device.Multiple parts of equipment 100 can comprise conveyer (such as, roller bearing 120), and conveyer can make PV module 105 move along the direction of arrow A.Alternatively, conveyer can comprise band, chain or any other be applicable to transmit the parts of PV module 105, with alternative roller bearing 120.In addition, equipment 100 can comprise heater 110 and bias voltage instrument 115.Can comprise photophore 122, the described sidepiece for the sidepiece place in PV module 105 Illumination adjusting being applied to PV module 105, PV module 105 is designed to receive light during use.As discussed further below, the method for using equipment 100 to manufacture photovoltaic module 105 is included in PV module 105 when being in the temperature of rising, electrical bias is applied to the electrode 305 and 310 (Fig. 3) of PV module 105.
Use equipment 100 pairs of PV modules 105 carry out regulating can be provided the reliability of improvement with performance characteristics to PV module 105 and can provide more consistent performance to the different PV module of batch production.During manufacture process, equipment 100 pairs of PV modules 105 comprise the adjustment of applying electrical bias and thermal conditioning and can carry out light application adjustment, pressurize with the material to PV module 105.The electrical bias being applied to prototype PV module 105 can be preferably that about 0.1 ampere (amp) can reach about 600 volts to about 25amp.In addition, can according to (such as) constant, change or the electric current of pulse and/or the combination of voltage and these variablees form apply electrical bias.The temperature range of prototype PV module 105 (applying the temperature range of electrical bias) preferably can between about 85 DEG C and about 160 DEG C, most preferably between about 110 DEG C and about 160 DEG C.In addition, use equipment 100 carries out time preferably about 0-30 minute of electrical bias and thermal conditioning, is more preferably less than 6 minutes.
Electrical bias and thermal stress can be applied in together with particular association ground each other, or are applied in as independent step, and wherein, biasing step utilizes the heating carried out between other PV module 105 processing periods.No matter when apply thermal stress, electrical bias and the thermal conditioning of combination are provided all associated with one anotherly, to provide the PV module 105 of the performance with improvement and to produce many groups PV module between the PV module manufactured similarly with less performance change.The performance of such PV module 105 can according to the I of PV module 105 with other PV modules
sc, V
oc, FF and/or R
octested and measure.
Such as, when the part of equipment 100 by preferably production line, for each PV module manufactured on a production line (such as, 105 and 125), disclosed adjustment can be performed as the process of standard.Alternatively, when equipment 100 can separate with production line, described adjustment can be performed as off-line application.Alternatively, described adjustment can be performed as and single PV module (such as, 105,125) or preconditioning performance (such as, the I organized in such PV module more
sc, V
oc, FF and/or R
oc) concrete test relevant or in response to preconditioning performance (such as, the I in single PV module (such as, 105,125) or the such PV module of many groups
sc, V
oc, FF and/or R
oc) concrete test and be performed.Alternatively, if known particular process conditioned disjunction event can cause the correctable performance issue in PV module, so described adjustment can be performed as relevant with PV module or batch production history or be performed in response to PV module or batch production history.
PV module 105 be preferably in temperature between about 85 DEG C and about 160 DEG C, most preferred be between about 110 DEG C and about 160 DEG C temperature time, equipment 100 can apply electrical bias to PV module 105 electrode and regulate.Electrical bias process is accelerated by heat, and this just means that the temperature of PV module 105 in preferred scope is higher, and bias voltages needs the time of cost shorter.In the most preferred temperature range of about 110 DEG C to about 160 DEG C, the time of bias voltages cost can be less than 6 minutes.
As shown in figures 1 and 3, bias voltage instrument 115 can be installed near the conveyer of assembly line.Bias voltage instrument 115 can move along at least one axis (X, Y and/or Z) or rotate around at least one axis (X, Y and/or Z).Result, bias voltage instrument 115 can move and regulate to engage with the electrode 305 and 310 of PV module 105, PV module 105 is supported by the roller bearing 120 of conveyer and is transmitted, and conveyer is between the downstream of heater 110 and/or other treating stations or heater 110 and/or other treating stations.
Fig. 2 illustrates in greater detail the embodiment of bias voltage instrument 115, and bias voltage instrument 115 provides electrical bias at conditioning period to the electrode 305 and 310 of PV module 105.Bias voltage instrument 115 comprises the first contact 205 and contacts 210 with second.First contact 205 contact with second 210 be constructed to (such as) via the electrode 305 with 310 that are connected to PV module 105 conductive lead wire (from PV module 105 out and its outside can be arrived) contact with 310 with the electrode 305 of PV module 105.Positive pole 305 and negative pole 310 are electrical contacts of PV module 105, and positive pole 305 and negative pole 310 can be connected to external circuit, to export when being in place or at the electricity of test period supply from PV module 105.First contact 205 of bias voltage instrument 115 contact with second 210 be electrical contact and to the electrode 305 and 310 of PV module 105 provide from electric power source 113 constant, change or the electric current of pulse and/or voltage or these combination.
As shown in Figure 3, the first contact 205 of bias voltage instrument 115 contact 210 and is constructed to positive pole 305 in contact PV module 105 and negative pole 310 with second.In order to coordinate with bias voltage instrument 115, be in the PV module 105 of the temperature of expectation by moving along roller bearing 120 and being sent to the Working position near bias voltage instrument 115.When PV module 105 is in suitable position, bias voltage instrument 115 and PV module 105 contact with each other.
Bias voltage instrument 115 can be constructed to contact with PV module 105 during the later stage manufactured.Therefore, when bias voltage instrument 115 contacts PV module 105, PV module 105 can partly be manufactured or fully be manufactured.Such as, before back cover is adjacent to be formed with PV module 105, bias voltage instrument 115 can contact the electrode 305 and 310 of PV module 105.Alternatively, the formation of back cover can come as shown in Figure 3, and bias voltage instrument can contact PV module 105 before installation cord plate (aerial lug being connected to the electrode 305 and 310 of PV module 105).
The electrical bias being applied to electrode 305 and 310 by bias voltage instrument 115 derives from electric power source 113, and electric power source 113 can be controlled by processor 114, exports predetermined electrical bias to make bias voltage instrument 115 to PV module 105.Electric power source 113 can provide multiple voltage, electric current and pulse.In some exemplary embodiments, electric power source 113 provides constant voltage, constant electric current, variable voltage, variable current, the pulse of constant current, the pulse of constant voltage or the combination in any among them.
In the exemplary embodiment, when the electrical bias carrying out PV module 105 regulates, electric power source 113 can provide constant electric current within the scheduled time from T1 to T2, as shown in by the figure in Fig. 4.Electric power source 113 also can be constructed to the sine wave (between A1 and A2) providing alternating current in duration section (T1-T2 second), as shown in Figure 5.By bias voltage instrument 115, electrical bias is applied to PV module 105, and continues the time that can reach the scope of about 30 minutes (T2-T1 of Fig. 4 and Fig. 5), preferably continue between about 1 minute and about 6 minutes.When applying electrical bias, the temperature of PV module 105 can increase, reduce, constant or their combination, as long as PV module 105 is in preferred temperature range (such as, between about 85 DEG C and about 160 DEG C, most preferably between about 110 DEG C and about 160 DEG C).
The electrical bias produced by electric power source 113 and bias voltage instrument 115 can comprise the voltage of the scope that can reach about 600 volts.In a preferred embodiment, electrical bias has the voltage from the scope of about 30 volts to about 200 volts.Or the electrical bias alternatively, produced by electric power source 113 and bias voltage instrument 115 also can comprise the electric current from about 0.1amp to the scope of about 25amp.In one embodiment, the amperage of generation depends on characteristic (such as, the I of PV module 105 of the measurement of the PV module 105 be conditioned
sc), as discussed below, before the application of electrical bias, if needed, estimate the characteristic of PV module 105 by testing equipment.
The setting of electrical bias preferably with I
screlevant, this is because I
scbias voltage set-point is allowed to calibrate along with the change of PV modular design.The amperage applied by bias voltage instrument 115 can be the I being multiplied by PV module 105 from about 0.3
scto about 5 I being multiplied by PV module 105
scscope.Therefore, if PV module 105 is adjusted to the I with about 1.44amp
sc, then the electric current being applied to PV module 105 by electrical bias can be the scope from about 0.43amp to about 7.2amp.
Referring again to Fig. 1, equipment 100 can comprise temperature sensor 126, and temperature sensor 126 to be positioned near conveyer device and temperature for detecting PV module 105.Such as, temperature sensor 126 can be any applicable temperature sensor (such as infrared temperature sensor or touch sensor).Can expect to select infrared temperature sensor, this is because infrared temperature sensor can determine the temperature of PV module 105 rapidly when not contacting PV module 105, when equipment 100 is merged in allegro assembly line, there is advantage in such transducer.The temperature (such as, during carrying out bias voltage or before) of PV module 105 can be estimated and the temperature influence of PV module 105 is applied to the parameter of the electrical bias of PV module 105 in conjunction with electrical bias.As mentioned above, when being in higher temperature, the bias voltage time can be shortened.Consider the temperature of PV module 105, electric power source 113 can be controlled as (such as, by processor 114 (Fig. 3)) provide specific electrical bias (such as, can electrical bias be applied when PV module 105 is in preferred temperature) to the contact 205,210 (Fig. 2) of bias voltage instrument 115.As a result, electrical bias can in real time according to temperature correction.
Thermal source 110 can be constructed to the temperature of PV module 105 to be increased to the temperature of (such as, between about 85 DEG C and about 160 DEG C, most preferred between about 110 DEG C and about 160 DEG C) in preferable range.Thermal source 110 provides heat energy by any applicable method to PV module 105 before carrying out electrical bias or during carrying out electrical bias.Such as, thermal source 110 can comprise electric heater, flame, maybe the temperature of PV module 105 can be increased to any thermal source of applicable temperature.In FIG, thermal source 110 be illustrated in PV module 105 top and near the position of carrying out electrical bias; But thermal source 110 can be arranged on any rational position near PV module 105 and bias voltage instrument 115, to provide heat energy to PV module 105, for carrying out electrical bias.
Substituting as the example devices 100 shown in Fig. 1, the thermal source 110 of specifying being exclusively used in and being associated with bias voltage instrument 115 can be omitted, and be positioned at the result before electrical bias operation (applying heat to PV module 105) as the manufacturing step of one or more PV module 105 or process, heat energy can be provided to PV module 105.Such as, the heat of applying can be a part for thermal annealing process or the module lamination process carried out before PV module 105 arrives equipment 100.In so exemplary lamination process; interlayer in the internal structure of PV module 105 (such as; 1020 (Fig. 7)) by heating PV module 105 and being softened; to make interlayer be attached to other layers in PV module 105, and provide protective finish to carry out anti-sealing to infiltrate and for making internal structure and the external environment condition electric isolution of PV module 105.Lamination process heating can be scope from about 120 DEG C to about 180 DEG C and continue the time period from the scope of about 5 minutes to about 20 minutes, thus can be applicable to use bias voltage instrument 115 to apply the temperature of electrical bias for PV module 105 provides.
As another example, the part that heat can be used as manufacturing the annealing process used in PV module 105 is applied to PV module 105.During annealing process, PV module 105 can be heat-treated, to change the material properties of one or more layer in PV module 105.PV module 105 can be heated to the temperature between about 85 DEG C and about 160 DEG C by annealing process, thus can be applicable to use bias voltage instrument 115 to apply the temperature of electrical bias for PV module 105 provides.
If heating process (such as, lamination or annealing) makes the temperature increase of PV module 105 exceed 130 DEG C, so sufficient cooling time can be provided before applying electrical bias by bias voltage instrument 115 to PV module 105.On the contrary, if heating process (such as, lamination or annealing) make the temperature of PV module 105 not be increased to more than 85 DEG C or preferred more than 110 DEG C, so can utilize other heating steps that PV module 105 is reached to be suitable for the temperature of carrying out electrical bias.
Referring again to Fig. 1, although equipment 100 can in the dark or use under surround lighting and disclosed method can be carried out in the dark or under surround lighting, but in the alternative embodiment, disclosed adjustment also comprise use photophore 122 (part for equipment 100 can be set to) apply light 124 to PV module 105.Light bias voltage has the effect similar with electrical bias and can be used to strengthen electrical bias and regulates.When electrical bias adjustment and luminous energy 124 regulate connected applications, the luminous energy 124 being applied to PV module 105 can change from 1sun to 100sun.
In a preferred embodiment, photophore 122 can produce and have from about 0.01kW/m
2to about 10kW/m
2the light 124 of the intensity in scope.Such strength range comprises and is approximately 1.366kW/m
2solar constant.Solar constant is the amount of the solar electromagnetic radiation of per unit area on the distance (being approximately the average distance from the sun to the earth) of an astronomical unit (AU) incides perpendicular to incident sunray plane.Therefore, solar constant represents the intensity of the solar radiation that PV module (such as, 105) will expose at fine day.Photophore 122 can send monochromatic light and optimization so that the absorption of the especially semiconductor layer of PV module 105.Alternatively, photophore 122 can send the light of the light of several discrete frequency, the light of special spectrum and/or frequency change.Can before applying electrical bias to PV module 105, period or after-applied smooth bias voltage.It should be noted, be used to regulate PV module with light bias voltage and this exposure adding thermal, but as described below, the independent exposure of the another kind using identical photophore 122 or another light source to produce by under making PV module 105 be exposed to light and the relevant electricity of test export and performance characteristics for estimating PV module 105.
If before being desirably in disclosed adjustment or carry out the test of performance characteristics and the estimation of PV module 105 together with disclosed adjustment, so the equipment 100 of Fig. 1 also can comprise testing tool 119.Testing tool 119 can comprise the test circuit 127 being connected to the first electrode 121 and the second electrode 123 (for being connected with first electrode 305 and the second electrode 310 of PV module 105).Alternatively, bias voltage instrument 115 can be connected to test circuit 127 and except performing electrical bias process, also perform the function of testing tool, thus need not add independent testing tool 119.
The performance test of PV module 105 can perform before or after adjustment PV module 105.Such test can comprise PV module 105 is exposed to light under also measure the photoelectric current produced by PV module 105.As seen above, in order to perform such performance estimation, equipment 100 can comprise the light source of specifying or utilize the photophore 122 arranged to carry out regulating.Testing light source can be installed near assembly line.Light source can produce the light had from the intensity within the scope of about 0.1kW/m2 to about 10kW/m2.Therefore, the light source for testing can be simulated and be equaled the solar spectrum of about 1sun to about 10sun.
If test and estimation procedure disclose the level of performance lower than minimum expectation of PV module 105, so underproof PV module 105 can be removed from assembly line, or, alternatively, underproof PV module 105 can turn back to equipment 100, carries out heating as above and electricity (and/or light) bias voltages (if described performance is improved by such process) in addition.Estimation procedure also can allow to divide into groups to qualified PV module according to performance.Such as, qualified module can be subdivided into the PV module group with closely similar performance characteristics.Then, these PV module groups can be used as the set sale of Performance Match.
Fig. 7 shows and can use disclosed method and the sectional view of the prototype PV module 105 utilizing disclosed method to manufacture.PV module 105 can comprise optical clear substrate 1001.Substrate 1001 can be any applicable transparent substrate material of such as glass (including, but are not limited to soda-lime glass or float glass) or polymer (sheet or plate).First conductive electrode (such as, transparent conductive oxide (TCO) layer 1003 (such as, indium tin oxide)) is arranged between substrate 1001 and semiconductor layer 1010.Semiconductor layer 1010 can be the bilayer comprising semiconductor Window layer 1011 (such as, cadmium sulfide) and semiconductor absorption layer 1012 (such as, cadmium telluride).
Resilient coating 1004 (such as, metal chalcogenide compound material) can be arranged between tco layer 1003 and semiconductor Window layer 1011, to provide the smooth surface that can place semiconductor Window layer 1001 and to reduce the irregular behavior that can occur between the Formation period of semiconductor Window layer 1011.In addition, barrier layer 1002 can be included between substrate 1001 and tco layer 1003, to reduce the sodium that PV module 105 performance can be caused to reduce or other pollutants are diffused into semiconductor layer from substrate 1001.Barrier layer 1002 can be (such as) SiO
2or SnO.Meanwhile, resilient coating 1004, tco layer 1003 and barrier layer 1002 can be considered to TCO heap.
Photovoltaic module 105 also can comprise conductive back contact layer 1014 and back cover 1016; conductive back contact layer 1014 is adjacent with absorbed layer 1012 and can be used as the second conductive electrode of PV module 105, and back cover 1016 is adjacent with back contact and can be used as the protective layer of PV module 105.Every layer of above-mentioned PV module 105 can be made up of successively a more than layer or film.Conductive electrode (that is, tco layer 1003 and back contact 1014) can be the assembly in PV module 105, and bias voltage instrument 115 (such as) is connected to conductive electrode via conductive lead wire, to regulate.
PV module 105 also can comprise the interlayer 1020 between back cover 1016 and back contact 1014.Interlayer 1020 can be used for the layer between the back cover layer 1016 of lamination PV module 105 and substrate 1001; Therefore the layer sealing PV module 105 makes it be isolated from the outside.In addition, interlayer 1020 also can be used for, by lamination process, front substrate 1001 is attached to back of the body substrate 1016.Interlayer 1012 can comprise any applicable material (such as, polymer).
Interlayer 1020 can be set to contact with other layers of PV module 105 (such as, back contact 1014, back cover 1016 and substrate 1001) before or after use thermal source (such as, passing through infrared radiation) is heated interlayer 1020.When heating, interlayer 1020 and other layers (such as, back contact 1014, back cover 1016 and substrate 1001) are pressed together (such as, using vacuum laminator).The material of interlayer 1020 melts by heating and allows it to flow and fill gap, then cure hard.As discussed above, such heating steps can be used when the electrical bias of PV module 105 regulates.
Regulating step described here and equipment 100 extend to and regulate multiple PV module (such as, 105 (Fig. 1) and 125 (Fig. 7)) on a production line.Such as, be not the PV module 105 once electrical bias being applied to a heating, but can be applied to by electrical bias can by the PV module (such as, 105,125) of multiple heating heated together simultaneously.This is by introducing other bias voltage instrument 115 or realizing by adding the multiple PV module of permission other contact plate interconnected rapidly.As a result, the time needing to manufacture a collection of PV module (such as, 105) can be reduced.
As shown in Figure 10, when arranging multiple bias voltage instrument 115, special electric power source 113 can be connected to each independent bias voltage instrument 115, to allow controls transfer individually to the bias-voltage of each PV module 105 and electric current.Alternatively, as shown in Figure 9, an electric power source 113 can be connected to a more than bias voltage instrument 115.Such as, for the structure with five bias voltage instruments 115, three bias voltage instruments 115 can be connected to the first electric power source (as shown in Figure 9), and remaining two bias voltage instruments can be connected to the second electric power source 113 (not shown).In this configuration, identical bias-voltage and electric current can be transferred to three the bias voltage instruments 115 being connected to the first electric power source 113.As a result, in this configuration may not independently controls transfer to the voltage and current of each PV module 105.But for each PV module 105, the duration of the electrical bias be transmitted controls by arranging relay 117 (Fig. 9) at each bias voltage instrument 115 place.Each relay 117 allows to carry out the electric power of controls transfer to each PV module 105 by opening or cut out corresponding relay 117.Therefore, relay 117 allows each PV module 105 to obtain the respective electrical bias duration.Alternatively, all relays 117 can as one man open and close, thus have the electrical bias of similar duration to whole PV module 105 transmission.
As shown in Figure 6, a kind of method for the manufacture of PV module (such as, 105) can comprise the following steps: PV module is heated to the temperature between about 85 DEG C and about 160 DEG C by (605), preferably about more than 110 DEG C; (610) electrical bias is applied to PV module.Described method also can comprise the following steps: (612) confirm the temperature of photovoltaic module; (614) at least in part based on the thermal creep stress electrical bias scheme (such as, duration) of PV module.Described method also can comprise step (616): the temperature of PV module is transferred to processor also at least in part based on described thermal creep stress electrical bias scheme.Temperature, transmission temperature can be confirmed in real time and select electrical bias.
As shown in Figure 8, the alternative embodiment for the manufacture of PV module (such as, 105) comprises step (702): in PV module 105, perform test, to determine its performance characteristics (such as, V
oc, FF, R
ocand/or I
sc).Preferably determine I
sc.If needed, described method can proceed to step (704): PV module be heated in the temperature range between about 85 DEG C and 160 DEG C, preferably more than 110 DEG C.This can supervene step (706): carry out electrical bias to PV module simultaneously.If step 704 and step 706 are not perform simultaneously, so electrical bias step 708 can follow heating steps 704.Such electrical bias step 708 can perform together with the illumination step 710 of PV module as above.
After these regulating steps complete, testing procedure 714 can be performed, be determined 716 in the performance characteristics of testing procedure 714 period PV module, to infer whether PV module has satisfactory performance characteristics.If the performance characteristics of PV module is confirmed as meeting the requirements (such as, if I
scbe determined to be in about 1.22A to (for the first solar energy FS series 2PV module) between about 1.33A or between about 1.84A to about 1.98A (for the first solar energy FS series 3PV module)), so can terminate this process.If the performance characteristics of PV module is confirmed as undesirable, PV module so can be made to be subject to further being similar to the process started in step 702 or 704 places.
Embodiment described here is exemplary and is preferred embodiment, and should not be interpreted as limiting invention disclosed.By specification, drawings and the claims, other features, target and advantage will be obvious.Although describe multiple embodiment of the present invention, will be appreciated that without departing from the scope of the invention, various modification can be made.In addition, also it should be understood that accompanying drawing is not necessarily drawn in proportion, and show some expression simplified of general principle of the present invention and various feature.The invention is not restricted to content disclosed in specification, and be only limitted to claim.
Claims (20)
1., for the formation of an equipment for photovoltaic module, comprising:
Thermal source, for heating photovoltaic module;
Electric power source;
Bias voltage instrument, is connected to described electric power source, for electrical bias being applied to when being heated photovoltaic module by described thermal source the electrode of photovoltaic module.
2. equipment as claimed in claim 1, wherein, described bias voltage instrument and electric power source are constructed to electrode bias voltage being applied to photovoltaic module, and wherein, described bias voltage can be constant, change or the curtage of pulse or their combination.
3. equipment as claimed in claim 1, wherein, described thermal source is the thermal source of specifying be associated with described bias voltage instrument.
4. equipment as claimed in claim 1, described equipment also comprises temperature sensor, and described temperature sensor is constructed to the temperature detecting photovoltaic module.
5. equipment as claimed in claim 4, wherein, based on the photovoltaic module detected by described temperature sensor temperature and control described electric power source.
6. equipment as claimed in claim 1, described equipment also comprises light source, for carrying out illumination to the light-receiving side of photovoltaic module.
7. equipment as claimed in claim 1, described equipment also comprises a kind of instrument, for test photovoltaic module from comprising at least one performance characteristics selected the group of short circuit current, open circuit voltage, fill factor, curve factor and open cell resistance.
8. equipment as claimed in claim 1, wherein, described electrical bias based on the determination of photovoltaic module performance characteristics and select.
9. equipment as claimed in claim 8, wherein, the performance characteristics of the determination of described photovoltaic module is short circuit current.
10., for the formation of a method for photovoltaic module, comprising:
Heating photovoltaic module;
When described photovoltaic module is in the temperature of rising by described heating, electrical bias is applied to the electrode of photovoltaic module, wherein, heating and applying electrical bias perform on particular association ground each other.
11. methods as claimed in claim 10, wherein, described photovoltaic module is heated to the temperature between about 85 DEG C and about 160 DEG C.
12. methods as claimed in claim 10, wherein, apply electrical bias comprise apply constant current, apply constant voltage, apply variable current, apply variable voltage, apply the pulse of multiple constant current and apply in the pulse of multiple constant voltage at least one.
13. methods as claimed in claim 10, wherein, applying electrical bias continues the time between about 1 minute and about 30 minutes.
14. methods as claimed in claim 10, described method also comprises: with apply together with electrical bias be that photovoltaic module is exposed to light under.
15. methods as claimed in claim 14, wherein, described light has the intensity between 0.1kW/m2 and 10kW/m2.
16. methods as claimed in claim 10, wherein, apply electrical bias and comprise the voltage applying to reach about 600 volts.
17. methods as claimed in claim 10, wherein, apply electrical bias and comprise the electric current applied between about 0.1amp to about 25amp.
18. methods as claimed in claim 10, wherein, based on photovoltaic module at least one performance characteristics determined and select described electrical bias.
19. methods as claimed in claim 18, wherein, at least one performance characteristics determined of described photovoltaic module is short circuit current.
20. 1 kinds of methods forming photovoltaic module, comprising:
Perform at least one performance characteristics of photovoltaic module first estimates;
If at least one performance characteristics described of photovoltaic module is confirmed to be lower than minimum level, then process photovoltaic module by heating and electrical bias;
Perform at least one performance characteristics described of photovoltaic module second estimates.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261589449P | 2012-01-23 | 2012-01-23 | |
| US61/589,449 | 2012-01-23 | ||
| PCT/US2013/022699 WO2013112551A2 (en) | 2012-01-23 | 2013-01-23 | Method and apparatus for photovoltaic device manufacture |
Publications (1)
| Publication Number | Publication Date |
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| CN104221163A true CN104221163A (en) | 2014-12-17 |
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|---|---|---|---|
| CN201380006428.0A Pending CN104221163A (en) | 2012-01-23 | 2013-01-23 | Method and apparatus for photovoltaic device manufacture |
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| Country | Link |
|---|---|
| EP (1) | EP2807680A2 (en) |
| CN (1) | CN104221163A (en) |
| WO (1) | WO2013112551A2 (en) |
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| US9202964B2 (en) | 2010-03-01 | 2015-12-01 | First Solar, Inc. | System and method for photovoltaic device temperature control while conditioning a photovoltaic device |
| BR112015023519A2 (en) * | 2013-03-15 | 2017-08-22 | First Solar Inc | SYSTEM AND METHOD FOR TEMPERATURE CONTROL OF THE CONDITIONED PHOTOVOLTAIC DEVICE AS A PHOTOVOLTAIC DEVICE |
| WO2020234630A1 (en) * | 2019-05-22 | 2020-11-26 | Garmin Switzerland | Method for optimizing electrical conduction through a metal/native oxide/metal interface |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090127448A1 (en) * | 2006-05-02 | 2009-05-21 | Takashi Fuyuki | Method and Device for Evaluating Solar Cell and Use Thereof |
| US20100201374A1 (en) * | 2009-02-07 | 2010-08-12 | Vasilyev Leonid A | High speed detection of shunt defects in photovoltaic and optoelectronic devices |
| US20110193561A1 (en) * | 2010-02-10 | 2011-08-11 | Sunpower Corporation | Chucks for supporting solar cell in hot spot testing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US3303059A (en) * | 1964-06-29 | 1967-02-07 | Ibm | Methods of improving electrical characteristics of semiconductor devices and products so produced |
| US3436275A (en) * | 1965-03-03 | 1969-04-01 | Thomas K Tsao | Method of treating solar cells |
| US4129823A (en) * | 1977-11-03 | 1978-12-12 | Sensor Technology, Inc. | System for determining the current-voltage characteristics of a photovoltaic array |
| US7309850B2 (en) * | 2005-08-05 | 2007-12-18 | Sinton Consulting, Inc. | Measurement of current-voltage characteristic curves of solar cells and solar modules |
| TW200940977A (en) * | 2008-03-19 | 2009-10-01 | Viswell Technology Co Ltd | Optical imaging apparatus and method for inspection of solar cells |
-
2013
- 2013-01-23 EP EP13702563.1A patent/EP2807680A2/en not_active Withdrawn
- 2013-01-23 WO PCT/US2013/022699 patent/WO2013112551A2/en active Application Filing
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090127448A1 (en) * | 2006-05-02 | 2009-05-21 | Takashi Fuyuki | Method and Device for Evaluating Solar Cell and Use Thereof |
| US20100201374A1 (en) * | 2009-02-07 | 2010-08-12 | Vasilyev Leonid A | High speed detection of shunt defects in photovoltaic and optoelectronic devices |
| US20110193561A1 (en) * | 2010-02-10 | 2011-08-11 | Sunpower Corporation | Chucks for supporting solar cell in hot spot testing |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013112551A3 (en) | 2013-09-19 |
| WO2013112551A2 (en) | 2013-08-01 |
| EP2807680A2 (en) | 2014-12-03 |
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