CN104201555A - Polarization insensitive electro-optic Q switch - Google Patents
Polarization insensitive electro-optic Q switch Download PDFInfo
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- CN104201555A CN104201555A CN201410476898.XA CN201410476898A CN104201555A CN 104201555 A CN104201555 A CN 104201555A CN 201410476898 A CN201410476898 A CN 201410476898A CN 104201555 A CN104201555 A CN 104201555A
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Abstract
The invention relates to the field of laser, in particular to a polarization insensitive electro-optic Q switch. A polarization light splitting element and a polarization light combining element (walk-off crystal) optically contact with two light pass surfaces of an electro-optic crystal, so that the electro-optic switch in a free space can perform polarization insensitive operation. A right-angle prism optically contacts with the other side of the walk-off crystal, a laser performs total internal reflection in a cavity for multiple times to penetrate, half wave voltage of electro-optic crystal is reduced by increasing the equivalent length of the electro-optic crystal, and the lower modulation voltage is acquired. The electro-optic switch is simple in structure and low in drive voltage, can serve as a Q switch of a laser device and light intensity modulation device and is applied to the field of optical communication.
Description
Technical field
The present invention relates to a kind of laser device field, especially relate to a kind of polarization irrelevant electric light Q and open the light.
Background technology
Laser Q-switching technology is that laser energy is compressed in the extremely narrow pulse of width, thereby makes the peak power of LASER Light Source improve a kind of technology of several orders of magnitude.The basis of laser Q-switching technology is a kind of special optical element--fast optical switch in chamber, is commonly referred to as laser Q-switching switch or referred to as Q switch.The object of laser Q-switching technology is: compressed pulse widths, improves peak power.
Q value is the index of optical resonator quality in evaluation laser, quality factor.The energy of the energy/every concussion cycle loss storing in Q value definition=2 π × resonant cavity.Q value is higher, and needed pumping threshold is just lower, that is more easily starting of oscillation of laser.Swash at general pulse solid
In light device, if do not adopt special measure, duration of oscillation and the optical pumping burst length (millisecond magnitude left and right) of pulse laser in chamber is roughly the same, and therefore the pulse power level of Output of laser is also always limited.
Electric light Q switch is exactly a kind of important devices in laser Q-switching, and it is the electro optic effect of utilizing crystal, adds a phase step type voltage on crystal, regulates the launch loss of photon in chamber.While starting working, crystal two ends add a voltage, and due to the polarization effect of crystal, the loss of resonant cavity is very large, and Q value is low, laser nonoscillatory, and the continuous accumulate particle number of upper laser level, Q opens the light in closed condition.A certain particular moment, removes suddenly crystal both end voltage, and resonant cavity suddenlys change low to loss, and Q value is high, and Q switch opens forms giant pulse laser.
In electric-optically Q-switched device, have KDP, lithium niobate (LN) etc. with conventional electrooptic crystal compared with, the anti-damage threshold of barium metaborate (BBO) crystal and extinction ratio are higher; Secondly bbo crystal is uniaxial crystal, and in larger range of temperature, BBO electric light Q switch there will not be static birefringent phenomenon, compared with other electrooptic crystals, and half-wave voltage and variations in refractive index minimum that BBO electro-optical Q-switch causes because of variations in temperature.Bbo crystal is trigonal system, and when without extra electric field, equation of refract rate ellipsoid is
If in the time that y direction of principal axis extra electric field is, index ellipsoid generation deformation, if the half-wave voltage of deriving thus BBO electro-optical Q-switch for to get d=2 mm, l=20 mm, no=2.3, γ 22=2.7 × 10-12 m/V, λ=1064 nm, calculates U=4.3 kV.This is a very high half-wave voltage, will cause interference to other electronic devices and components, and high voltage is also very dangerous to operating personnel simultaneously, the requirement of power supply has also been improved simultaneously.If reduce the driving voltage being added on electrooptic crystal, will increase the size of electrooptic crystal, greatly increase cost.
While is because electrooptical switching is positioned in laserresonator conventionally, and electrooptical switching needs the incident of line polarisation, and the most typical scheme is the design adopting with polarizer.This tune Q mode will add partially and Calibrator in switch external, has improved the complexity of device, has also increased the size of laser system simultaneously.
Summary of the invention
The present invention has overcome the deficiencies in the prior art, and a kind of polarization irrelevant electro-optical Q-switch is provided, and by increasing length, reduces half-wave voltage, secondly in Q switching, carries out the polarization of incident light by walk-off crystal.
To achieve these goals, the present invention adopts following technical scheme:
On a logical light end face optical cement of electrooptic crystal (103), walk from (walk-off) crystal (102), make unpolarized luminous energy in walk-off crystal, form two bunch polarised lights; Walk-off crystal (104) on another light exit side face optical cement of photoelectric crystal, makes two bundle polarised lights again become a branch of; Two right-angle prisms (101,105) on the optical cement of outside after walk-off crystal, wherein a prism (101) right angle place wears into the incident port of plane as light.
Described electrooptic crystal (103) is for having the cuboid uniaxial crystal of transverse electric light modulation performance, electrooptic crystal (103) optical axis direction is z direction, upper two the xz planes parallel with optical axis of electrooptic crystal (103) are coated with conductive gold layer, voltage-drop loading is in Y direction, and two the xy planes vertical with optical axis are coated with anti-reflection film.Described prism (101,105) is all coated with anti-reflection film with the logical light face of walk-off crystal (102,104); Two right angle reflecting surface polishings of prism (101,105).
The present invention is compared with conventional electric light Q tune switch, and its profitable fruit is, by adjusting size, adjustable laser in bbo crystal through number of times.Can see from the comparison diagram of Fig. 3, the present invention and conventional electro-optic Q switch structure compared are compacter, can or else significantly change under the prerequisite of crystal length size, significantly reduce the driving voltage of electrooptic crystal, thereby reduce the requirement to driving power fan-out capability, simultaneously to input polarisation of light degree not requirement, and this structure also can be applied on the crystal such as KDP, LN.
Brief description of the drawings
Fig. 1 is the electric-optically Q-switched optical switch construction schematic diagram of the present invention;
Fig. 2 is crystal voltage loading direction figure in electro-optic Q switch of the present invention;
Fig. 3 is that the present invention and conventional electro-optic Q switch are applied to respectively the comparison diagram in laser cavity.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described.The present invention adopts right-angle prism to carry out deviation to light path, regulate laser in bbo crystal through number of times, reduce with the crystal-like half-wave voltage headed by bbo crystal; Add walk-off crystal at crystal two ends, make the electrooptical switching of free space also can carry out polarization irrelevant operation.
Execution mode one: as shown in Figure 2,101 is treated right-angle prism, and its right angle place is polished polishing, and is coated with anti-reflection film, the form of a terrace with edge of formation.102 and 104 is walk-off crystal, and 103 is bbo crystal, and 105 is right-angle prism.Light, from 101 cut-out surface feeding sputterings, through right-angle prism (101), becomes two bundle direction of vibration mutual vertical line polarisation o light and e light through walk-off crystal (102); Then this two-beam is combined into a branch of through bbo crystal (103) again in walk-off crystal (104); Be reflected back for twice through walk-off crystal (104) by the right angle face of right-angle prism (105) again.Walk-off crystal (104) has now become polarization spectro element, and light beam is separated into the two orthogonal line polarisations in bundle polarization direction again through bbo crystal (103).Then light beam just constantly comes and goes between two prisms, the finally gap outgoing with right-angle prism (105) from walk-off crystal (104).This structure has not only increased its equivalent length, has reduced half-wave voltage, has also directly carried out polarisation of light processing in photoelectricity Q switching inside.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but those skilled in the art should be understood that; not departing from the spirit and scope of the present invention that appended claims limits; can make a variety of changes the present invention in the form and details, be protection scope of the present invention.
Claims (3)
1. a polarization irrelevant electro-optical Q-switch, is characterized in that: on a logical light end face optical cement of electrooptic crystal (103), walk from (walk-off) crystal (102), make unpolarized luminous energy in walk-off crystal, form two bunch polarised lights; Walk-off crystal (104) on another light exit side face optical cement of photoelectric crystal, makes two bundle polarised lights again become a branch of; Two right-angle prisms (101,105) on the optical cement of outside after walk-off crystal, wherein a prism (101) right angle place wears into the incident port of plane as light.
2. a kind of polarization irrelevant electro-optical Q-switch according to claim 1, it is characterized in that: described electrooptic crystal (103) is for having the cuboid uniaxial crystal of transverse electric light modulation performance, electrooptic crystal (103) optical axis direction is z direction, upper two the xz planes parallel with optical axis of electrooptic crystal (103) are coated with conductive gold layer, voltage-drop loading is in Y direction, and two the xy planes vertical with optical axis are coated with anti-reflection film.
3. a kind of polarization irrelevant electro-optical Q-switch according to claim 1 and 2, is characterized in that: described prism (101,105) is all coated with anti-reflection film with the logical light face of walk-off crystal (102,104); Two right angle reflecting surface polishings of prism (101,105).
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CN201410476898.XA CN104201555A (en) | 2014-09-18 | 2014-09-18 | Polarization insensitive electro-optic Q switch |
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CN201410476898.XA CN104201555A (en) | 2014-09-18 | 2014-09-18 | Polarization insensitive electro-optic Q switch |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104836106A (en) * | 2015-06-09 | 2015-08-12 | 福建福晶科技股份有限公司 | Miniature solid mode locked laser |
CN105977781A (en) * | 2016-07-28 | 2016-09-28 | 福建福晶科技股份有限公司 | Voltage-adjustable electro-optical Q switch |
CN109521247A (en) * | 2018-12-11 | 2019-03-26 | 龙岩学院 | The temperature self-compensation method of transverse modulation optical voltage transformer |
CN109975241A (en) * | 2019-02-27 | 2019-07-05 | 哈尔滨工业大学 | A kind of corner reflection enhancing optoacoustic spectroscopy formula trace gas detection device and method |
CN110398845A (en) * | 2018-04-25 | 2019-11-01 | 福州高意光学有限公司 | A kind of electric light photoswitch |
CN110401095A (en) * | 2018-04-25 | 2019-11-01 | 福州高意光学有限公司 | A kind of electric-optically Q-switched device |
CN110600979A (en) * | 2019-08-31 | 2019-12-20 | 湖北久之洋红外系统股份有限公司 | Pyramid prism folding cavity laser |
CN110649453A (en) * | 2019-08-31 | 2020-01-03 | 湖北久之洋红外系统股份有限公司 | Right-angle prism folding cavity laser |
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US3719414A (en) * | 1970-08-28 | 1973-03-06 | Westinghouse Electric Corp | Polarization independent light modulation means using birefringent crystals |
CN1315790A (en) * | 2000-03-24 | 2001-10-03 | 信息产业部武汉邮电科学研究院 | Comb method for dividing waves |
US6330097B1 (en) * | 1998-04-08 | 2001-12-11 | Corning Applied Technologies Corp. | High-speed electro-optic modulator |
US20040184699A1 (en) * | 2001-08-01 | 2004-09-23 | Digilens, Inc. | Electro optical device with parallel sections for orthogonal polarization modes |
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CN203490436U (en) * | 2013-10-12 | 2014-03-19 | 福州高意通讯有限公司 | Electro-optics Q-switch optical switch |
CN103715597A (en) * | 2013-12-30 | 2014-04-09 | 福建福晶科技股份有限公司 | Electro-optical Q-switch unrelated to polarization |
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2014
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Patent Citations (8)
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US3719414A (en) * | 1970-08-28 | 1973-03-06 | Westinghouse Electric Corp | Polarization independent light modulation means using birefringent crystals |
US6330097B1 (en) * | 1998-04-08 | 2001-12-11 | Corning Applied Technologies Corp. | High-speed electro-optic modulator |
CN1315790A (en) * | 2000-03-24 | 2001-10-03 | 信息产业部武汉邮电科学研究院 | Comb method for dividing waves |
US20040184699A1 (en) * | 2001-08-01 | 2004-09-23 | Digilens, Inc. | Electro optical device with parallel sections for orthogonal polarization modes |
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CN203466420U (en) * | 2013-10-12 | 2014-03-05 | 福州高意通讯有限公司 | Electro-optic Q-switching optical switch and Q-switching laser device |
CN203490436U (en) * | 2013-10-12 | 2014-03-19 | 福州高意通讯有限公司 | Electro-optics Q-switch optical switch |
CN103715597A (en) * | 2013-12-30 | 2014-04-09 | 福建福晶科技股份有限公司 | Electro-optical Q-switch unrelated to polarization |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104836106A (en) * | 2015-06-09 | 2015-08-12 | 福建福晶科技股份有限公司 | Miniature solid mode locked laser |
CN105977781A (en) * | 2016-07-28 | 2016-09-28 | 福建福晶科技股份有限公司 | Voltage-adjustable electro-optical Q switch |
CN110398845A (en) * | 2018-04-25 | 2019-11-01 | 福州高意光学有限公司 | A kind of electric light photoswitch |
CN110401095A (en) * | 2018-04-25 | 2019-11-01 | 福州高意光学有限公司 | A kind of electric-optically Q-switched device |
CN109521247A (en) * | 2018-12-11 | 2019-03-26 | 龙岩学院 | The temperature self-compensation method of transverse modulation optical voltage transformer |
CN109975241A (en) * | 2019-02-27 | 2019-07-05 | 哈尔滨工业大学 | A kind of corner reflection enhancing optoacoustic spectroscopy formula trace gas detection device and method |
CN110600979A (en) * | 2019-08-31 | 2019-12-20 | 湖北久之洋红外系统股份有限公司 | Pyramid prism folding cavity laser |
CN110649453A (en) * | 2019-08-31 | 2020-01-03 | 湖北久之洋红外系统股份有限公司 | Right-angle prism folding cavity laser |
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Application publication date: 20141210 |