CN104193772B - A kind of trialkyl indium etherate takes off ether device - Google Patents
A kind of trialkyl indium etherate takes off ether device Download PDFInfo
- Publication number
- CN104193772B CN104193772B CN201410450662.9A CN201410450662A CN104193772B CN 104193772 B CN104193772 B CN 104193772B CN 201410450662 A CN201410450662 A CN 201410450662A CN 104193772 B CN104193772 B CN 104193772B
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- CN
- China
- Prior art keywords
- ether
- dissociation
- retort
- etherate
- trialkyl indium
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052738 indium Inorganic materials 0.000 title abstract description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 4
- 238000009833 condensation Methods 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 238000010494 dissociation reaction Methods 0.000 abstract description 13
- 230000005593 dissociations Effects 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000007599 discharging Methods 0.000 abstract description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000003747 Grignard reaction Methods 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
Abstract
The present invention provides a kind of trialkyl indium etherate and takes off ether device; fed by setting head tank; retort is stirred dissociation; after the condensed device of ether after dissociation into receiving tank; the mixture for taking off the trialkyl indium of ether carries out rectifying by discharge valve discharging, and is all connected with the logical nitrogen of nitrogen tube in head tank and condenser and whole reaction is protected；The present apparatus can realize that the ether dissociateed separates immediately from mixed system while ether is dissociated, and the trialkyl indium etherate dissociation ether and ether of routine are separated into two different flows merging realizes in the same apparatus；By the technical program, when obtaining identical trialkyl indium product, the efficiency of de- ether improves 20% 40%；Simultaneously because dissociation merges in the operation of same unit with separating, production efficiency is improved, reduces production cost.
Description
Technical field
The present invention relates to high-purity trialkyl indium production technical field, more particularly to a kind of trialkyl indium-etherate
De- ether device.
Background technology
High-purity trimethyl indium is metal organic chemical vapor deposition（MOCVD）Technique epitaxial growth indium phosphide and other indiums
The key raw material of compound semiconductor light electric material.Conventional high-purity trialkyl indium production mainly first passes through grignard reaction and is made
Trialkyl indium-etherate, then again by adding new part, after trimethyl indium is formed new part with new part,
The ether of dissociation is separated again.But existing technology, it can not be given in instant separation of the realization to ether simultaneously of dissociation ether
Trimethyl indium large-scale production adds equipment and human cost.Therefore solve the above problems and just seem very necessary.
The content of the invention
The invention provides a kind of trialkyl indium-etherate to take off ether device, by using the device, not only improves
The efficiency rate of de- ether, moreover it is possible to simplify production equipment, reduce production cost.
In order to solve the above problems, the invention provides a kind of trialkyl indium-etherate to take off ether device, includes
Retort and receiving tank, the retort upper left side are provided with the first form, head tank are provided with the first form；In retort
Right side is connected with the "T"-shaped discharge nozzle in longitudinal direction, and level is practiced on the horizontal right side of discharge nozzle condenser, is connected with and connects below condenser
Closed tube, receive pipe end and be provided with the second form, receiving tank is connected to below the second form and is used to connect ether；The longitudinal direction of discharge nozzle
Upside be provided with the mixture that discharge valve is used to after de- ether.
Further improvement is that：Agitator is provided with the top of the retort to extend into retort.
Further improvement is that：Right side is provided with material inlet valve on the head tank.
Further improvement is that：Nitrogen tube is connected with the top of the head tank, condenser overhead is connected with nitrogen tube.
Beneficial effects of the present invention：The present apparatus is fed by setting head tank, and retort is stirred dissociation, after dissociation
The condensed device of ether after into receiving tank, took off ether trialkyl indium mixture by discharge valve discharging carry out rectifying, and
And it is all connected with the logical nitrogen of nitrogen tube in head tank and condenser and whole reaction is protected；The present apparatus is same dissociation ether
When, and can realize that the ether dissociateed separates immediately from mixed system, the trialkyl indium of routine-etherate is dissociated into second
Ether separates two different flows merging from ether and realized in the same apparatus；By the technical program, identical trialkyl is being obtained
During indium product, the efficiency of de- ether improves 20%-40%；Simultaneously because dissociation merges in the operation of same unit with separating,
Production efficiency is improved, reduces production cost.
Brief description of the drawings
Fig. 1 is the schematic diagram of the present invention.
Wherein：1- retort, 2- receiving tanks, the forms of 3- first, 4- head tanks, 5- discharge nozzles, 6- condensers, 7- are received
Pipe, the forms of 8- second, 9- discharge valves, 10- agitators, 11- material inlet valves, 12- nitrogen tubes.
Embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment, the invention will be further described, the embodiment
It is only used for explaining the present invention, is not intended to limit the scope of the present invention..
As shown in figure 1, the present embodiment, which provides a kind of trialkyl indium-etherate, takes off ether device, include retort 1
With receiving tank 2, the upper left side of retort 1 is provided with the first form 3, head tank 4 is provided with the first form 3；In retort 1
Right side is connected with the "T"-shaped discharge nozzle 5 in longitudinal direction, and level is practiced on the horizontal right side of discharge nozzle 5 condenser 6, and the lower section of condenser 6 connects
There is reception pipe 7, the end of reception pipe 7 is provided with the second form 8, and the lower section of the second form 8 is connected to receiving tank 2 and is used to connect ether；Go out
Longitudinal upside of expects pipe 5 is provided with the mixture that discharge valve 9 is used to after de- ether；The top of retort 1, which is provided with, to be stirred
Device 10 is mixed to extend into retort 1；Right side is provided with material inlet valve 11 on the head tank 4；The top of head tank 4 is connected with
Nitrogen tube 12, the top of condenser 6 are connected with nitrogen tube 12.
For the present apparatus by setting head tank 4 to feed, retort 1 is stirred dissociation, after the condensed device 6 of the ether after dissociation
Into receiving tank 2, the mixture for taking off the trialkyl indium of ether carries out rectifying by the discharging of discharge valve 9, and in the He of head tank 4
Condenser 6 is all connected with nitrogen tube 12 and leads to nitrogen protecting whole reaction；The present apparatus can be realized while ether is dissociated
The ether dissociateed is separated immediately from mixed system, and the trialkyl indium of routine-etherate is dissociated into ether and ether point
From two different flows merge to be realized in the same apparatus.
By the technical program, when obtaining identical trialkyl indium product, the efficiency of de- ether improves 20%-40%；Together
When due to dissociation with separate merging same unit operation in, improve production efficiency, reduction production cost.
Claims (1)
1. a kind of trialkyl indium-etherate takes off ether device, include retort（1）And receiving tank（2）, its feature exists
In：The retort（1）Upper left side is provided with the first form（3）, the first form（3）On be provided with head tank（4）；Retort
（1）Upper right side is connected with the "T"-shaped discharge nozzle in longitudinal direction（5）, discharge nozzle（5）Horizontal right side be connected with condenser（6）, condensation
Device（6）Lower section is connected with reception pipe（7）, reception pipe（7）End is provided with the second form（8）, the second form（8）Lower section is connected to
Receiving tank（2）For connecing ether；Discharge nozzle（5）Longitudinal upside be provided with discharge valve（9）For going out the mixing after de- ether
Thing；The retort（1）Top is provided with agitator（10）It extend into retort（1）It is interior；The head tank（4）Upper right side is set
There is material inlet valve（11）；The head tank（4）Top is connected with nitrogen tube（12）, condenser（6）Top and nitrogen tube（12）Phase
Even.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410450662.9A CN104193772B (en) | 2014-09-05 | 2014-09-05 | A kind of trialkyl indium etherate takes off ether device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410450662.9A CN104193772B (en) | 2014-09-05 | 2014-09-05 | A kind of trialkyl indium etherate takes off ether device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104193772A CN104193772A (en) | 2014-12-10 |
| CN104193772B true CN104193772B (en) | 2018-01-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410450662.9A Active CN104193772B (en) | 2014-09-05 | 2014-09-05 | A kind of trialkyl indium etherate takes off ether device |
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| CN (1) | CN104193772B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104587939A (en) * | 2015-01-07 | 2015-05-06 | 安徽亚格盛电子新材料有限公司 | Device for directly preparing gallium trichloride-tetrahydrofuran solution at normal temperature |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203741248U (en) * | 2014-03-17 | 2014-07-30 | 湖北省宏源药业有限公司 | Improved oxidation reaction and tail gas adsorption device for synthesizing glyoxylic acid |
| CN204111631U (en) * | 2014-09-05 | 2015-01-21 | 安徽亚格盛电子新材料有限公司 | A kind of trialkyl indium-etherate takes off ether device |
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2014
- 2014-09-05 CN CN201410450662.9A patent/CN104193772B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203741248U (en) * | 2014-03-17 | 2014-07-30 | 湖北省宏源药业有限公司 | Improved oxidation reaction and tail gas adsorption device for synthesizing glyoxylic acid |
| CN204111631U (en) * | 2014-09-05 | 2015-01-21 | 安徽亚格盛电子新材料有限公司 | A kind of trialkyl indium-etherate takes off ether device |
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| Publication number | Publication date |
|---|---|
| CN104193772A (en) | 2014-12-10 |
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Address after: No. 88 Baoshun Road, Economic and Technological Development Zone, Wuhu City, Anhui Province, 241000 Patentee after: Anhui Yagesheng Electronic New Materials Co.,Ltd. Address before: 241009 Third Floor, Management Committee of Wuhu Economic and Technological Development Zone, Anhui Province Patentee before: ANHUI ARGOSUN NEW ELECRONIC MATERIALS Co.,Ltd. |
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