CN104183790A - Organic light emission diode and preparation method thereof - Google Patents
Organic light emission diode and preparation method thereof Download PDFInfo
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- CN104183790A CN104183790A CN201310194278.2A CN201310194278A CN104183790A CN 104183790 A CN104183790 A CN 104183790A CN 201310194278 A CN201310194278 A CN 201310194278A CN 104183790 A CN104183790 A CN 104183790A
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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Abstract
The invention provides an organic light emission diode and a preparation method thereof. The organic light emission diode comprises a substrate, a cathode, an electron injection layer, an electron transfer layer, a light-emitting layer, a hole transfer layer, a hole injection layer and an anode which are stacked in sequence. The cathode is made of a mixed material formed by lanthanum hexaboride and silver, aluminium, magnesium or gold. Since the lanthanum hexaboride is used as the material of the cathode, and the silver, aluminium, magnesium or gold are mixed to the lanthanum hexaboride to form a mixed film, the overall electroconductivity can be improved, and the prepared cathode has relatively-high light transmittance and has relatively-low work function and high electroconductivity. The invention provides the preparation method of the organic light emission diode. The preparation method is simple in process, wide in material sources, and low in cost.
Description
Technical field
The invention belongs to organic electroluminescent field, be specifically related to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) is a kind ofly to take organic material as luminescent material, the energy conversion device that can be luminous energy the electric energy conversion applying.It has the outstanding properties such as ultra-thin, self-luminous, response are fast, low-power consumption, in fields such as demonstration, illuminations, has application prospect very widely.
The structure of organic electroluminescence device is sandwich structure, accompanies one or more layers organic film between negative electrode and conductive anode.In containing the device of sandwich construction, inner side, the two poles of the earth mainly comprises luminescent layer, implanted layer and transport layer.Organic electroluminescence device is carrier injection type luminescent device, at anode and negative electrode, add after operating voltage, hole is from anode, electronics is injected into respectively the organic material layer of device work from negative electrode, it is luminous that two kinds of charge carriers form hole-duplet in luminous organic material, and then light sends from electrode.
At present, in the Driving technique of active matrix organic light-emitting diode (AMOLED) panel (AMOLED), except driving the OLED just putting, some serial inverted OLED Driving technique have also been developed.For inverted OLED, its hearth electrode is negative electrode, be connected with the drain electrode of field-effect transistor, can obtain than just putting the better performance of OLED, but, conventionally need electrode to there is lower work content, higher conductance, and consider direction of light, also need to ask electrode to there is higher visible light transmissivity.Conventionally the metal material Ag adopting, although the conductivity such as Al are better, work content is higher, and transmitance is not high, and the application of being inverted OLED technology is subject to certain restrictions.
Summary of the invention
In order to address the above problem, the present invention aims to provide a kind of organic electroluminescence device having compared with high light-emitting efficiency.The present invention also provides a kind of preparation method of organic electroluminescence device.
First aspect, the invention provides a kind of organic electroluminescence device, comprises the substrate, negative electrode, electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and the anode that stack gradually; The material of described negative electrode is the composite material that a kind of and lanthanum hexaboride in silver, aluminium, magnesium and gold forms, and in described composite material, the mass fraction of silver, aluminium, magnesium or gold is 5～20%.
Inversion Organnic electroluminescent device provided by the invention, has adopted lanthanum hexaboride (LaB
6) as cathode material, silver, aluminium, magnesium or gold are entrained in lanthanum hexaboride and form mixed film, can improve whole conductivity.Lanthanum hexaboride fusing point is 2210 ° of C, has extraordinary thermal stability, and chemical property is highly stable, and its work function is between 2.6～2.9eV, is conducive to the injection of electronics.
Simultaneously, Organnic electroluminescent device provided by the invention, adopt inverted structure, negative electrode is placed on substrate, then on negative electrode, set gradually electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode, can avoid like this structure of the high energy particle destruction luminescent layer of sputtering technology generation, guarantee the stability of device membrane structure.
Preferably, in composite material, the mass fraction of silver, aluminium, magnesium or gold is 10～15%.
Preferably, the thickness of negative electrode is 30～200nm.
Preferably, substrate is clear glass.
Preferably, the material of electron injecting layer is lithium fluoride (LiF).
Preferably, the thickness of electron injecting layer is 1nm.
Preferably, the material of electron transfer layer is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi).
Preferably, the thickness of electron transfer layer is 30nm.
Preferably, the material of luminescent layer is the material of main part doped with guest materials, described guest materials is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl closes that iridium (FIrpic), two (4,6-difluorophenyl pyridines)-tetra-(1-pyrazolyl) boric acid close iridium (FIr6), (acetylacetone,2,4-pentanedione) closes iridium (Ir (MDQ)
2(acac)), three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3) or three (2-phenylpyridines) close iridium (Ir (ppy)
3), described material of main part is 4,4'-bis-(9-carbazole) biphenyl (CBP), oxine aluminium (Alq
3), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) or N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), the doping mass fraction of described guest materials in material of main part is 1%～20%.
Also preferably, the material of luminescent layer is 4,4'-bis-(2,2-diphenylethyllene)-1,1'-biphenyl (DPVBi), 4,4'-two [4-(di-p-tolyl is amino) styryl] biphenyl (DPAVBi) or 5,6,11,12-tetraphenyl naphthonaphthalene (Rubrene).
Preferably, the thickness of luminescent layer is 1～15nm.
Preferably, the material of hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB).
Preferably, the material of hole transmission layer is 40nm.
Preferably, the material of hole injection layer is 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA).
Preferably, the material of hole injection layer is 20nm.
Preferably, the material of anode is gold (Au), aluminium (Al), silver (Ag) or its alloy.
Preferably, the thickness of anode is 18～100nm.
Second aspect, the invention provides a kind of preparation method of organic electroluminescence device, comprises the following steps:
Clean substrate is provided;
On described substrate, negative electrode is prepared in sputter, step is for to be mixed to form composite material by a kind of and lanthanum hexaboride in silver, aluminium, magnesium and gold, in described composite material, the mass fraction of silver, aluminium, magnesium or gold is 5～20%, and it is 1 * 10 that described composite material is placed in to vacuum degree
-5～1 * 10
-3target position in the vacuum system of Pa, sputter preparation, described sputtering condition comprises base target spacing 60mm, working gas argon gas, gas flow 25sccm, pressure 2.0Pa, sputtering power 50～150W, sputtering rate 0.1～0.5nm/s;
On described negative electrode, electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode are prepared in thermal evaporation successively, and described thermal resistance evaporation condition is pressure 1 * 10
-5～1 * 10
-3pa, the evaporation speed of electron injecting layer is 0.1～1nm/s; The evaporation speed of electron transfer layer, luminescent layer, hole transmission layer and hole injection layer is 0.01～1nm/s, and the evaporation speed of anode is 0.2～2nm/s;
Finally obtain described organic electroluminescence device.
By the cleaning to substrate, remove the organic pollution of substrate surface.
Particularly, the clean operation of substrate is: substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dry up with nitrogen, remove the organic pollution of glass surface, obtain clean substrate.
Inversion Organnic electroluminescent device provided by the invention, has adopted lanthanum hexaboride as cathode material, and silver, aluminium, magnesium or gold are entrained in lanthanum hexaboride and form mixed film, can improve whole conductivity.Lanthanum hexaboride fusing point is 2210 ° of C, has extraordinary thermal stability, and chemical property is highly stable, and its work function is between 2.6～2.9eV, is conducive to the injection of electronics.
Simultaneously, because the fusing point of lanthanum hexaboride is higher, adopt sputtering technology preparation can obtain better effect, the present invention adopts sputtering technology to prepare lanthanum hexaboride film, and be prepared into inverted OLED device, and negative electrode is placed on substrate, then on negative electrode, set gradually electron transfer layer, luminescent layer, hole transmission layer and anode, can avoid like this structure of the high energy particle destruction luminescent layer of sputtering technology generation, guarantee the stability of device.By metal and LaB
6mixing, adopt sputtering technology preparation, easily obtain stable dopant states.
Preferably, substrate is clear glass.
Negative electrode is arranged on substrate by sputtering method.
Preferably, in composite material, the mass fraction of silver, aluminium, magnesium or gold is 10～15%.
Preferably, the thickness of negative electrode is 30～200nm.
Preferably, the material of electron injecting layer is lithium fluoride (LiF).
Preferably, the thickness of electron injecting layer is 1nm.
Preferably, the material of electron transfer layer is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi).
Preferably, the thickness of electron transfer layer is 30nm.
Preferably, the material of luminescent layer is the material of main part doped with guest materials, described guest materials is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl closes that iridium (FIrpic), two (4,6-difluorophenyl pyridines)-tetra-(1-pyrazolyl) boric acid close iridium (FIr6), (acetylacetone,2,4-pentanedione) closes iridium (Ir (MDQ)
2(acac)), three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3) or three (2-phenylpyridines) close iridium (Ir (ppy)
3), described material of main part is 4,4'-bis-(9-carbazole) biphenyl (CBP), oxine aluminium (Alq
3), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) or N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), the doping mass fraction of described guest materials in material of main part is 1%～20%.
Also preferably, the material of luminescent layer is 4,4'-bis-(2,2-diphenylethyllene)-1,1'-biphenyl (DPVBi), 4,4'-two [4-(di-p-tolyl is amino) styryl] biphenyl (DPAVBi) or 5,6,11,12-tetraphenyl naphthonaphthalene (Rubrene).
Preferably, the thickness of luminescent layer is 1～15nm.
Preferably, the material of hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB).
Preferably, the material of hole transmission layer is 40nm.
Preferably, the material of hole injection layer is 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA).
Preferably, the material of hole injection layer is 20nm.
Preferably, the material of anode is gold (Au), aluminium (Al), silver (Ag) or its alloy.
Preferably, the thickness of anode is 18～100nm.
The present invention has following beneficial effect:
(1) organic electroluminescence device that the present invention makes is frivolous;
(2) OLED provided by the invention, has adopted lanthanum hexaboride (LaB
6) as cathode material, silver, aluminium, magnesium or gold are entrained in lanthanum hexaboride and form mixed film, can improve whole conductivity.Lanthanum hexaboride fusing point is 2210 ° of C, has extraordinary thermal stability, and chemical property is highly stable, and its work function is between 2.6～2.9eV, be conducive to the injection of electronics, the negative electrode making has high light transmitance, simultaneously with lower work content and higher conductivity;
(3) adopt sputtering technology to prepare lanthanum hexaboride film, and be prepared into inverted OLED device, negative electrode is placed on substrate, then on negative electrode, set gradually electron transfer layer, luminescent layer, hole transmission layer and anode, can avoid like this structure of the high energy particle destruction luminescent layer of sputtering technology generation, guarantee the stability of device.By metal and LaB
6mixing, adopt sputtering technology preparation, easily obtain stable dopant states;
(4) it is high that the OLED device of preparing has luminous efficiency, long service life, and preparation technology is simple, material source is extensive, and cost is low.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the organic electroluminescence device of the embodiment of the present invention 1 preparation.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A preparation method for organic electroluminescence device, comprises the following steps:
(1) glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen, obtains clean substrate;
(2) on substrate, negative electrode is prepared in sputter, and step is by LaB
6be mixed to form composite material with Ag, the mass fraction of Ag in this composite material is 5%; It is 1 * 10 that this composite material is placed in to vacuum degree
-4target position in the vacuum system of Pa, sputter preparation, sputtering condition comprises base target spacing 60mm, working gas argon gas, gas flow 25sccm, pressure 2.0Pa, sputtering power 50W, sputtering rate 0.1nm/s; Obtain the negative electrode that thickness is 50nm;
(3) in vacuum degree, be 1 * 10
-4vacuum thermal evaporation coating system in, at cathode surface successively evaporation, prepare electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode;
Particularly, in the present embodiment, the material of electron injecting layer is LiF, and thickness is 1nm; The material of electron transfer layer is TPBi, and thickness is 30nm; The material of luminescent layer is DPVBi, and thickness is 10nm; The material of hole transmission layer is NPB, and thickness is 40nm; The material of hole injection layer is m-MTDATA, and thickness is 20nm; The material of anode is Ag, and thickness is 100nm.
Wherein, the evaporation speed of LiF is 0.5nm/s; The evaporation speed of TPBi, DPVBi, NPB and m-MTDATA is 0.5nm/s, and the evaporation speed of Ag is 0.2nm/s;
After above step completes, obtain organic electroluminescence device, structure is specifically expressed as: glass substrate/LaB
6: Ag (5%, 50nm)/LiF (1nm)/TPBi (30nm)/DPVBi (10nm)/NPB (40nm)/m-MTDAT A (20nm)/Ag (100nm).
Fig. 1 is the structural representation of the organic electroluminescence device of the present embodiment 1 preparation.As shown in Figure 1, the structure of this organic electroluminescence device comprises substrate 101, negative electrode 102, electron injecting layer 103, electron transfer layer 104, luminescent layer 105, hole transmission layer 106, hole injection layer 107 and the anode 108 stacking gradually.
Embodiment 2
A preparation method for organic electroluminescence device, comprises the following steps:
(1) glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen, obtains clean substrate;
(2) on substrate, negative electrode is prepared in sputter, and step is by LaB
6be mixed to form composite material with Al, the mass fraction of Al in this composite material is 10%; It is 1 * 10 that this composite material is placed in to vacuum degree
-5target position in the vacuum system of Pa, sputter preparation, sputtering condition comprises base target spacing 60mm, working gas argon gas, gas flow 25sccm, pressure 2.0Pa, sputtering power 100W, sputtering rate 0.5nm/s; Obtain the negative electrode that thickness is 100nm;
(3) in vacuum degree, be 1 * 10
-5vacuum thermal evaporation coating system in, at cathode surface successively evaporation, prepare electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode;
Particularly, in the present embodiment, the material of electron injecting layer is LiF, and thickness is 1nm; The material of electron transfer layer is TPBi, and thickness is 30nm; The material of luminescent layer is DPVBi, and thickness is 10nm; The material of hole transmission layer is NPB, and thickness is 40nm; The material of hole injection layer is m-MTDATA, and thickness is 20nm; The material of anode is Ag, and thickness is 100nm.
Wherein, the evaporation speed of LiF is 0.5nm/s; The evaporation speed of TPBi, DPVBi, NPB and m-MTDATA is 0.5nm/s, and the evaporation speed of Ag is 0.2nm/s;
After above step completes, obtain organic electroluminescence device, structure is specifically expressed as: glass substrate/LaB
6: Al (10%, 100nm)/LiF (1nm)/TPBi (30nm)/DPVBi (10nm)/NPB (40nm)/m-MTDATA (20nm)/Ag (100nm).
Embodiment 3
A preparation method for organic electroluminescence device, comprises the following steps:
(1) glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen, obtains clean substrate;
(2) on substrate, negative electrode is prepared in sputter, and step is by LaB
6be mixed to form composite material with Au, the mass fraction of Au in this composite material is 15%; It is 1 * 10 that this composite material is placed in to vacuum degree
-3target position in the vacuum system of Pa, sputter preparation, sputtering condition comprises base target spacing 60mm, working gas argon gas, gas flow 25sccm, pressure 2.0Pa, sputtering power 150W, sputtering rate 0.2nm/s; Obtain the negative electrode that thickness is 100nm;
(3) in vacuum degree, be 1 * 10
-3vacuum thermal evaporation coating system in, at cathode surface successively evaporation, prepare electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode;
Particularly, in the present embodiment, the material of electron injecting layer is LiF, and thickness is 1nm; The material of electron transfer layer is TPBi, and thickness is 30nm; The material of luminescent layer is DPVBi, and thickness is 10nm; The material of hole transmission layer is NPB, and thickness is 40nm; The material of hole injection layer is m-MTDATA, and thickness is 20nm; The material of anode is Ag, and thickness is 100nm.
Wherein, the evaporation speed of LiF is 0.5nm/s; The evaporation speed of TPBi, DPVBi, NPB and m-MTDATA is 0.5nm/s, and the evaporation speed of Ag is 0.2nm/s;
After above step completes, obtain organic electroluminescence device, structure is specifically expressed as: glass substrate/LaB
6: Au (15%, 100nm)/LiF (1nm)/TPBi (30nm)/DPVBi (10nm)/NPB (40nm)/m-MTD ATA (20nm)/Ag (100nm).
Embodiment 4
A preparation method for organic electroluminescence device, comprises the following steps:
(1) glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen, obtains clean substrate;
(2) on substrate, negative electrode is prepared in sputter, and step is by LaB
6be mixed to form composite material with Mg, the mass fraction of Mg in this composite material is 20%; It is 1 * 10 that this composite material is placed in to vacuum degree
-5target position in the vacuum system of Pa, sputter preparation, sputtering condition comprises base target spacing 60mm, working gas argon gas, gas flow 25sccm, pressure 2.0Pa, sputtering power 100W, sputtering rate 0.2nm/s; Obtain the negative electrode that thickness is 200nm;
(3) in vacuum degree, be 1 * 10
-5vacuum thermal evaporation coating system in, at cathode surface successively evaporation, prepare electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode;
Particularly, in the present embodiment, the material of electron injecting layer is LiF, and thickness is 1nm; The material of electron transfer layer is TPBi, and thickness is 30nm; The material of luminescent layer is DPVBi, and thickness is 10nm; The material of hole transmission layer is NPB, and thickness is 40nm; The material of hole injection layer is m-MTDATA, and thickness is 20nm; The material of anode is Ag, and thickness is 100nm.
Wherein, the evaporation speed of LiF is 0.5nm/s; The evaporation speed of TPBi, DPVBi, NPB and m-MTDATA is 0.5nm/s, and the evaporation speed of Ag is 0.2nm/s;
After above step completes, obtain organic electroluminescence device, structure is specifically expressed as: glass substrate/LaB
6: Mg (20%, 200nm)/LiF (1nm)/TPBi (30nm)/DPVBi (10nm)/NPB (40nm)/m-MTD ATA (20nm)/Ag (100nm).
Comparative example 1
A preparation method for organic electroluminescence device, comprises the following steps:
(1) glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen, obtains clean substrate;
(2) in vacuum degree, be 1 * 10
-4in the vacuum thermal evaporation coating system of Pa, at substrate surface evaporation Ag, as negative electrode, thickness is 30nm, and evaporation rate is 0.5nm/s;
(3) in vacuum degree, be 1 * 10
-4vacuum thermal evaporation coating system in, at cathode surface successively evaporation, prepare electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode;
Particularly, in the present embodiment, the material of electron injecting layer is LiF, and thickness is 1nm; The material of electron transfer layer is TPBi, and thickness is 30nm; The material of luminescent layer is DPVBi, and thickness is 10nm; The material of hole transmission layer is NPB, and thickness is 40nm; The material of hole injection layer is m-MTDATA, and thickness is 20nm; The material of anode is Ag, and thickness is 100nm.
Wherein, the evaporation speed of LiF is 0.5nm/s; The evaporation speed of TPBi, DPVBi, NPB and m-MTDATA is 0.5nm/s, and the evaporation speed of Ag is 0.2nm/s;
After above step completes, obtain organic electroluminescence device, structure is specifically expressed as: glass substrate/Ag (30nm)/LiF (1nm)/TPBi (30nm)/DPVBi (10nm)/NPB (40nm)/m-MTDATA (20nm)/Ag (100nm).
Comparative example 2
A preparation method for organic electroluminescence device, comprises the following steps:
(1) glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen, obtains clean substrate;
(2) on substrate, negative electrode is prepared in sputter, and step is by LaB
6being placed in vacuum degree is 1 * 10
-4target position in the vacuum system of Pa, sputter preparation, sputtering condition comprises base target spacing 60mm, working gas argon gas, gas flow 25sccm, pressure 2.0Pa, sputtering power 50W, sputtering rate 0.1nm/s; Obtain the negative electrode that thickness is 50nm;
(3) in vacuum degree, be 1 * 10
-4vacuum thermal evaporation coating system in, at cathode surface successively evaporation, prepare electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode;
Particularly, in the present embodiment, the material of electron injecting layer is LiF, and thickness is 1nm; The material of electron transfer layer is TPBi, and thickness is 30nm; The material of luminescent layer is DPVBi, and thickness is 10nm; The material of hole transmission layer is NPB, and thickness is 40nm; The material of hole injection layer is m-MTDATA, and thickness is 20nm; The material of anode is Ag, and thickness is 100nm.
Wherein, the evaporation speed of LiF is 0.5nm/s; The evaporation speed of TPBi, DPVBi, NPB and m-MTDATA is 0.5nm/s, and the evaporation speed of Ag is 0.2nm/s;
After above step completes, obtain organic electroluminescence device, structure is specifically expressed as: glass substrate/LaB
6(50nm)/LiF (1nm)/TPBi (30nm)/DPVBi (10nm)/NPB (40nm)/m-MTDATA (20nm)/Ag (100nm).
Table 1 is the performance data of the device of embodiment 1～4 and comparative example 1～2, and wherein negative electrode transmitance refers to the transmitance of independent cathode thin film.The negative electrode of comparative example 2 is the LaB using separately
6, from table, can learn, adopt LaB
6as negative electrode, have higher transmitance, the negative electrode of comparative example 1 is the argent using separately, and adopts the negative electrode of metal material, its transmitance and LaB
6negative electrode is compared, obviously on the low side.From embodiment 1～4 data, can find out, at LaB
6in while mixing the metal material of certain mass, the transmitance of device is not had a significant effect.
For the square resistance of negative electrode, adopted the LaB after metal-doped
6, its electric conductivity is improved, and square resistance has been reduced to below 28 ohms/square from 65 ohms/square, is beneficial to electroluminescent electronic injection and transmitting procedure.After being prepared into device, contrast known, inversion type electroluminescent device provided by the invention, negative electrode has higher transmitance and conductivity, therefore relatively traditional device and comparative device, its light efficiency is higher.
The performance data of the organic electroluminescence device of table 1 embodiment 1～4 and comparative example 1～2 preparation
| ? | Square resistance (ohms/square) | Negative electrode transmitance | Luminous efficiency (lm/W) |
| Embodiment 1 | 25 | 80.6% | 12.6 |
| Embodiment 2 | 28 | 79.8% | 10.1 |
| Embodiment 3 | 16 | 81.6% | 15.8 |
| Embodiment 4 | 24 | 76.6% | 11.8 |
| Comparative example 1 | 10 | 56.5% | 7.5 |
| Comparative example 2 | 65 | 82.1% | 8.6 |
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. an organic electroluminescence device, comprise the substrate, negative electrode, electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and the anode that stack gradually, it is characterized in that, the material of described negative electrode is the composite material that a kind of and lanthanum hexaboride in silver, aluminium, magnesium and gold forms, and in described composite material, the mass fraction of silver, aluminium, magnesium or gold is 5～20%.
2. organic electroluminescence device as claimed in claim 1, is characterized in that, in described composite material, the mass fraction of silver, aluminium, magnesium or gold is 10～15%.
3. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described negative electrode is 30～200nm.
4. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Clean substrate is provided;
On described substrate, negative electrode is prepared in sputter, step is for to be mixed to form composite material by a kind of and lanthanum hexaboride in silver, aluminium, magnesium and gold, in described composite material, the mass fraction of silver, aluminium, magnesium or gold is 5～20%, and it is 1 * 10 that described composite material is placed in to vacuum degree
-5～1 * 10
-3target position sputter in the vacuum system of Pa, described sputtering condition comprises base target spacing 60mm, working gas argon gas, gas flow 25sccm, pressure 2.0Pa, sputtering power 50～150W, sputtering rate 0.1～0.5nm/s;
On described negative electrode, electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and anode are prepared in thermal evaporation successively, and described thermal resistance evaporation condition is pressure 1 * 10
-5～1 * 10
-3pa, the evaporation speed of electron injecting layer is 0.1～1nm/s; The evaporation speed of electron transfer layer, luminescent layer, hole transmission layer and hole injection layer is 0.01～1nm/s, and the evaporation speed of anode is 0.2～2nm/s;
Finally obtain described organic electroluminescence device.
5. the preparation method of organic electroluminescence device as claimed in claim 4, is characterized in that, in described composite material, the mass fraction of silver, aluminium, magnesium or gold is 10～15%.
6. the preparation method of organic electroluminescence device as claimed in claim 4, is characterized in that, the thickness of described negative electrode is 30～200nm.
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Application publication date: 20141203 |