CN104183612B - A kind of pel array of the inclined cmos image sensor of light path - Google Patents
A kind of pel array of the inclined cmos image sensor of light path Download PDFInfo
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- CN104183612B CN104183612B CN201410377485.6A CN201410377485A CN104183612B CN 104183612 B CN104183612 B CN 104183612B CN 201410377485 A CN201410377485 A CN 201410377485A CN 104183612 B CN104183612 B CN 104183612B
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Abstract
The invention discloses a kind of pel array of the inclined cmos image sensor of light path,Pel array is formed by the way that pixel unit is formed pixel unit group repeated arrangement by the arrangement mode of n × n with the odd number not less than 3 or even number,And make the pixel unit in group positioned at center that there is the light path in the vertical irradiation direction parallel to incident light,Pixel unit positioned at surrounding has the light path in the vertical irradiation direction for favouring incident light,And the lenticule of surrounding pixel unit,The color filter,Optical channel and light sensitive diode are also set by identical angle of inclination,The light of vertical incidence can be gathered a pixel unit group position by realizing,The light of oblique incidence can be gathered again,So as to optimize synthesis responding ability of the pel array to different directions incident ray,Substantially increase overall lightsensitivity," dark angle " phenomenon of lens edge can fully be optimized,And significantly improve the picture quality of pel array entirety.
Description
Technical field
The present invention relates to a kind of cmos image sensor, contains the cmos image for tilting light path more particularly, to a kind of
The pel array of sensor.
Background technology
Imaging sensor is the device for converting optical signals to electric signal, is had in DTV, face-to-face communication in market
It is widely applied.According to the difference of photoelectric conversion mode, imaging sensor can be generally divided into ccd image sensing
Device (Charge-coupled Device, CCD) and cmos image sensor (CMOS IMAGE SENSOR, CIS) two classes.
For CCD, on the one hand, scientific research and industrial circle in specialty, the CCD with high s/n ratio become first choice；
On the other hand, also quite favored in high-end photography and vedio recording field, the CCD that high image quality can be provided.And for CIS,
IP Camera and mobile phone photograph module are also widely applied.
CCD is compared with CIS, the former power consumption is higher, integrated difficulty is larger, and the latter is low in energy consumption, easy of integration and resolution ratio compared with
It is high.Although CCD may be better than CIS in terms of picture quality, still, as the continuous improvement of CIS technologies and CMOS manufacture
Technological level is substantially improved, the CCD of the picture quality of a part of CIS already close to same specification.CIS is taking in performance
Substantive progress, and advantage is widely used in tablet computer, intelligence soon etc. by its low cost, high efficiency, transmission speed
All kinds of emerging fields such as mobile phone.With promotion of the field of consumer electronics such as camera cell phone to CIS, following cmos image passes
The market prospects of sensor will be more wide.One of small size, important topic for being designed to this area research of high-performance CIS.
Intuitively performance indicator is exactly reproduction ability to image to imaging sensor one, and the pixel battle array of imaging sensor
Row are exactly the critical function module for being directly related to this index.Pel array can be divided into front illuminated formula (Front Side
Illuminated, FSI) pel array and back-illuminated type (Back Side Illuminated, BSI) pel array.In FSI pixels
In the structure of array, include filter layer, metal layer and silicon base layer successively along incident light direction；Include photosensitive two pole in silicon base layer
Manage (Photo Diode, PD), filter layer generally comprises lenticule (Micro-lens) and color filter array (Color
Filter Array, CFA) the two or one.If BSI pel arrays, then along incident light direction successively include filter layer,
Silicon base layer and metal layer.Above two pel array is designed with optical channel between filter layer and photosensitive layer, and incident light is filtered
Mirror layer, reaches the PD in silicon base layer along optical channel, makes PD photosensitive, realize opto-electronic conversion, analog-to-digital conversion, and output digital image.
In using pel array of the CMOS active pixel sensor (Active Pixel Sensor, APS) as the CIS of its photosensitive unit,
One APS (i.e. a pixel unit) includes a light sensitive diode (Photo Diode, PD) and an activated amplifier
(Active Amplifier)。
Referring to Fig. 1, Fig. 1 is a kind of structure diagram of the pel array of cmos image sensor of the prior art.Such as
Shown in Fig. 1, this pel array is plane BSI pel arrays, using APS as photosensitive unit, the microlens layer in its structure
6th, layered arrangement (made at omission by the identical structure that part repeats in a planar form for the color filter layer 7, silicon base layer 1 and metal layer 8
Reason).The color filter 4 for a kind of color in 5 corresponding color filter layer 7 of each lenticule in microlens layer 6；Silicon base layer
1 is also known as PD layers, and main component is silicon, is provided with light sensitive diode (PD) 2 and optical channel 3, and optical channel 3 leads to face by PD2
Color filter 4；8 main component of metal layer is silica, wherein having circuit structure 9, for transmitting the telecommunications exported after photovoltaic reaction
Number.One lenticule 5, the color filter 4, optical channel 3, PD2 and corresponding circuit structure 9 form a pixel unit, pixel list
Member is arranged in order composition pel array.Lenticule 5, the color filter 4, optical channel 3 and the PD2 of each pixel unit form incident light
Conduction light path (in such as figure hollow arrow signified), incident light is conducted to PD by light path, is made PD photosensitive, is realized opto-electronic conversion.
In actual fabrication, metal layer 8 and silicon base layer 1 are processed as a whole.
In the pel array of the above-mentioned prior art, the setting direction of light path all with the light perpendicular to pel array incidence
Line direction is parallel.When incident light is irradiated to APS, the metal material on Sensor (sensor) surface can reflect away a part of incidence
Light；Remaining light can just be converged by lenticule, and PD is reached by the color filter and optical channel.This causes the light of the photosensitive needs of PD
Powerful is impaired.In FSI pel arrays, when light passes through optical channel, since metal layer therein has plurality of layers hardware cloth
Line so that light further incurs loss.When light vertical incidence, the probability of reflection is smaller, therefore its loss is less；And work as
When Ray obliquity is incident, the probability of reflection is larger, its loss increases suddenly.Compared with FSI pel arrays, BSI pel arrays because
Metal layer is in the outside of silicon base layer, and the lightsensitivity of its pel array can be improved by the optical channel of shortening.However, BSI is still
It cannot thoroughly solve the problems, such as to respond during Ray obliquity incidence poor.Therefore, for whole image system, in camera lens module
Edge, the pel array of the prior art can collect obvious light attenuation, i.e. " dark angle " phenomenon, influence the matter of image
Amount.
The content of the invention
It is an object of the invention to overcome drawbacks described above existing in the prior art, there is provided a kind of to contain the CMOS for tilting light path
The pel array of imaging sensor, by the arrangement that the quantity n of pixel unit is pressed to n × n with the odd number not less than 3 or even number
Mode forms pixel unit group repeated arrangement and forms the pel array, and makes a pictures of (n-2) × (n-2) for being located at center in group
Plain unit has the light path in the vertical irradiation direction parallel to incident light, remaining be located at pixel unit of surrounding with favour into
Penetrate the light path in the vertical irradiation direction of light, realize light that vertical incidence can be gathered a pixel unit group position and
The light of oblique incidence is gathered, so as to respond the problem of poor when overcoming Ray obliquity incidence existing in the prior art, is optimized
Synthesis responding ability of the pel array to different directions incident ray.
To achieve the above object, the present invention uses following two technical solutions：
A kind of pel array of the inclined cmos image sensor of light path, the pel array are back-illuminated type pel array,
Lenticule, the color filter, optical channel and the light sensitive diode of the optical routing pixel unit are formed, it is characterised in that the picture
The quantity of plain unit is represented with n, and pixel unit group is formed by the arrangement modes of n × n, and in units of the pixel unit group
Repeated arrangement forms the pel array, and the n is the odd number not less than 3, in each pixel unit group with (n-2) ×
(n-2) pixel unit centered on a pixel unit, remaining described pixel unit are arranged around the center pixel unit
Form surrounding pixel unit；The whole pixel unit in each pixel unit group is using red, green, blue ternary
Described the color filter of wherein same color in mass-tone, the color filter array of the pel array is with the pixel unit
Group is arranged to make up for unit by Bayer (Bayer) pattern；The center pixel unit has the vertical irradiation parallel to incident light
The light path in direction, i.e., have the vertical irradiation for favouring the incident light with vertical optical path, the surrounding pixel unit
The light path in direction, that is, have and tilt light path, and the lenticule, the color filter, the light of each surrounding pixel unit lead to
Road and light sensitive diode are obliquely installed at the same angle.The inclined pixel unit of light path is arranged in the vertical pixel unit of light path
Around, the incident intensity that the pixel unit group position obtains is exported jointly.
The image pixel array of the invention described above is in the form of in units of pixel unit group, according to the face of Bayer pattern
Color filter array arranges；If it is to use similar Bayer pattern from the point of view of in units of 1 pixel unit, between pixel unit
Color filter array arrangement.For example, representing red filter with letter r, G represents green filter, and B represents blue filter,
In a kind of color filter array of spread pattern of Bayer pattern, the color filter of pixel unit according to the first row RGRG ...,
Second row GBGB ... and so on form arrangement；And in the pel array of the present invention, it is using n as the odd number not less than 3
N × n pixel unit be the color filter that whole pixel units in one group, one group use same color, be single with group
Position according to Bayer pattern color filter array arrange, i.e., according to：The first row R1R2…RnG1G2…Gn..., the second row R1R2…
RnG1G2…Gn..., line n R1R2…RnG1G2…Gn..., the (n+1)th row G1G2…GnB1B2…Bn..., the n-th+2 row G1G2…
GnB1B2…Bn..., the n-th+n rows G1G2…GnB1B2…Bn... and so on form arrangement.
Since the light path of partial pixel unit has certain inclination angle, pel array of the invention is for each side
To the light of incidence, its complex sensitivitg greatly improves, i.e., the light of vertical incidence can be gathered a pixel unit group position
Line, and the light of oblique incidence can be gathered.Since the inclined incident ray in part also can be in the case of less reflection along inclination
Light path arrive at light sensitive diode, make response of these pixel units to the light of oblique incidence be improved significantly so that greatly
The big lightsensitivity for improving pel array entirety.For whole image system, in camera lens module edge, the prior art
Pel array can collect obvious light attenuation, i.e. " dark angle " phenomenon, and the pel array of the present invention being capable of high degree
Optimization such case, export more bright, relatively sharp image in edge.
Further, the light path of each surrounding pixel unit relative to the center pixel unit the light path
It is obliquely installed by identical flare angle, i.e. the lateral direction of surrounding pixel unit towards center pixel unit, which symmetrically tilts, to be set
Put, form the bell shape towards incident light direction, the lenticule, the color filter, the light of each surrounding pixel unit
Passage and light sensitive diode are set by the angle tilt identical with the flare angle, that is, in each surrounding pixel unit light path
Lenticule, the color filter, optical channel and light sensitive diode are overall symmetrically deflects phase to the lateral direction of center pixel unit
Same angle.
Further, the outer junction of the lenticule of each pixel unit in each pixel unit group is formed
Convex surface shape.
Further, the light path of each surrounding pixel unit relative to the center pixel unit the light path
It is obliquely installed by identical introversion angle, i.e. the interior direction of surrounding pixel unit towards center pixel unit, which symmetrically tilts, to be set
Put, form the bell shape backwards to incident light direction, the lenticule, the color filter, the light of each surrounding pixel unit
Passage and light sensitive diode are set by the angle tilt identical with the introversion angle, that is, in each surrounding pixel unit light path
Lenticule, the color filter, optical channel and light sensitive diode are overall symmetrically deflects phase to the interior direction of center pixel unit
Same angle.
Further, the outer junction of the lenticule of each pixel unit in each pixel unit group forms concave surface
Curve form.
The outer junction of the lenticule of each pixel unit forms convex surface or concave surface curve form, can make in each light path
Lenticule, the color filter, optical channel and light sensitive diode keep original shapes and sizes, and tight by tie point of the color filter
Solid matter arranges, and avoids having an impact original opto-electronic conversion performance.
Further, the angle is less than the half-angle at pick-up lens visual angle, otherwise, the week positioned at whole pel array edge
The light of oblique incidence will cannot be gathered by enclosing pixel unit.
The present invention another technical solution be：
A kind of pel array of the inclined cmos image sensor of light path, the pel array are back-illuminated type pel array,
Lenticule, the color filter, optical channel and the light sensitive diode of the optical routing pixel unit are formed, it is characterised in that the picture
The quantity of plain unit is represented with n, and pixel unit group is formed by the arrangement modes of n × n, and in units of the pixel unit group
Repeated arrangement forms the pel array, and the n is the even number not less than 4, in each pixel unit group with (n-2) ×
(n-2) pixel unit centered on a pixel unit, remaining described pixel unit are arranged around the center pixel unit
Form surrounding pixel unit；The whole pixel unit of the pixel unit group is divided equally into four quadrants in plane coordinate system
In, the whole pixel unit in each quadrant is using the wherein same face in red, green, blue ternary mass-tone
Described the color filter of color, the color filter array of the pel array is with the whole pixel unit in each quadrant
It is arranged to make up for unit by Bayer (Bayer) pattern；The center pixel unit has the vertical irradiation side parallel to incident light
To the light path, i.e., with vertical optical path, the surrounding pixel unit has the vertical irradiation side for favouring the incident light
To the light path, that is, have and tilt light path, and the lenticule, the color filter, the optical channel of each surrounding pixel unit
It is obliquely installed at the same angle with light sensitive diode.The inclined pixel unit of light path is arranged in light path vertical pixel unit week
Enclose, export the incident intensity of pixel unit group position acquisition jointly.
The image pixel array of second technical solution of the invention described above is that whole pixel units of pixel unit group are equal
Divide in four quadrants of plane coordinate system, and in units of the pixel unit of the whole in each quadrant, according to Bayer moulds
The color filter array arrangement of formula；If it is using similar from the point of view of in units of 1 pixel unit, between pixel unit
The color filter array arrangement of Bayer pattern.For example, representing red filter with letter r, G represents green filter, and B represents blueness
Filter, in a kind of color filter array of spread pattern of Bayer pattern, the color filter of pixel unit is according to the first row
RGRG ..., the second row GBGB ... and so on form arrangement；And in the above-mentioned pel array of the present invention, it is by pixel
N × n pixel unit of unit group is divided equally includes n/4 pixel unit in four quadrants, each quadrant, and with each quadrant
N/4 pixel unit is the color filter of whole pixel units in one group, one group using same color, in units of this group
According to Bayer pattern color filter array arrange, i.e., according to：The first row R1…Rn/2Gn/2+1…Gn..., the n-th/2 row R1…
Rn/2G n/2+1…Gn..., n-th/2+1 rows G1…Gn/2B n/2+1…Bn..., line n G1…Gn/2B n/2+1…Bn... with such
The form arrangement pushed away.
Using second technical solution can realize with first technical solution similar in technique effect, for by different numbers
The pixel unit group that the pixel unit of n is formed is measured, difference lies in the increase of n, center pixel unit is in pixel unit group
Quantitative proportion also increasing, make the pixel unit increasing proportion that light path is vertical in pel array, so, to vertical incidence light
Collection effect improve.
Further, the light path of each surrounding pixel unit relative to the center pixel unit the light path
It is obliquely installed by identical flare angle, i.e. outside of the surrounding pixel unit in pixel unit group towards center pixel unit
To being symmetrically obliquely installed, the bell shape towards incident light direction is formed, the lenticule of each surrounding pixel unit,
The color filter, optical channel and light sensitive diode are set by the angle tilt identical with the flare angle, that is, pixel unit
The lenticule in each surrounding pixel unit light path, the color filter, optical channel and light sensitive diode in group is overall to center pixel
The lateral direction of unit symmetrically deflects identical angle.
Further, the outer junction of the lenticule of each pixel unit in each pixel unit group is formed
Convex surface shape.
Further, the light path of each surrounding pixel unit relative to the center pixel unit the light path
It is obliquely installed by identical introversion angle, i.e. surrounding pixel unit in pixel unit group is towards the interior side of center pixel unit
To being symmetrically obliquely installed, the bell shape backwards to incident light direction is formed, the lenticule of each surrounding pixel unit,
The color filter, optical channel and light sensitive diode are set by the angle tilt identical with the introversion angle, that is, pixel unit
The lenticule in each surrounding pixel unit light path, the color filter, optical channel and light sensitive diode in group is overall to center pixel
The interior direction of unit symmetrically deflects identical angle.
Further, the outer junction of the lenticule of each pixel unit in each pixel unit group is formed
Concave surface curve form.
Further, the angle is less than the half-angle at pick-up lens visual angle, otherwise, the week positioned at whole pel array edge
The light of oblique incidence will cannot be gathered by enclosing pixel unit.
It can be seen from the above technical proposal that the present invention, by the way that the quantity of pixel unit is represented with n, n is not less than 3
Odd number or even number, pixel unit group is formed by the arrangement modes of n × n, and using the pixel unit group as unit repeated arrangement
The pel array is formed, and makes a pixel units of (n-2) × (n-2) in group positioned at center that there is hanging down parallel to incident light
The light path of straight direction of illumination, remaining pixel unit for being located at surrounding have the light path in the vertical irradiation direction for favouring incident light,
It is real and lenticule, the color filter, optical channel and the light sensitive diode of the pixel unit of surrounding are also set by identical angle of inclination
Present pixel unit group position can gather the light of vertical incidence and gather the light of oblique incidence, and can basis
Need to adjust the vertical optical path ratio shared in pixel unit group with tilting light path, so as to optimize pel array to not Tongfang
To the synthesis responding ability of incident ray, overall lightsensitivity is substantially increased.It is base that the present invention, which makes full use of the prior art,
Plinth is innovated, its cost is controllable, can fully optimize " dark angle " phenomenon of lens edge, and it is whole significantly to improve pel array
The picture quality of body.
Brief description of the drawings
Fig. 1 is a kind of structure diagram of the pel array of cmos image sensor of the prior art；
Fig. 2 is the CFA pattern diagrams of Bayer pattern；
Fig. 3 is the structure diagram of the CMOS image pixel array in the embodiment of the present invention one；
Fig. 4 is the structure diagram of the CMOS image pixel array in the embodiment of the present invention two；
Fig. 5 is the CFA pattern diagrams of the embodiment of the present invention one and the CMOS image pixel array in embodiment two；
Fig. 6 is the structure diagram of the CMOS image pixel array in the embodiment of the present invention three；
Fig. 7 is the structure diagram of the CMOS image pixel array in the embodiment of the present invention four；
Fig. 8 is the CFA pattern diagrams of the CMOS image pixel array in the embodiment of the present invention three and example IV.
Embodiment
Below in conjunction with the accompanying drawings, the embodiment of the present invention is described in further detail.
It should be noted that in following embodiments, when embodiments of the present invention are described in detail, in order to clearly show that
The structure of the present invention is special not draw to the structure in attached drawing according to general proportion in order to illustrate, and has carried out partial enlargement, become
Shape and omission processing, therefore, should avoid in this, as limitation of the invention to understand.
Embodiment one
In the present embodiment, referring to Fig. 3, Fig. 3 is the structure of the CMOS image pixel array in the embodiment of the present invention one
Schematic diagram.As shown in figure 3, the pel array of cmos image sensor of the present invention uses back-illuminated type pel array, by towards entering
Penetrate light direction includes metal layer 21, silicon base layer 12, the color filter layer 20 and microlens layer 19 successively.21 main component of metal layer is
Silica, wherein having circuit structure 22, for the electric signal transmission of opto-electronic conversion to be handled to peripheral circuit；Silicon base layer 12
Also known as PD (light sensitive diode) layer, main component is silicon, and equipped with light sensitive diode 13 and optical channel 14, light sensitive diode 13 is used
Opto-electronic conversion is carried out in the incident light to reception, optical channel 14 is used to conduct incident light；The color filter layer 20 and microlens layer 19
For coloured image to be focused and obtained to incident light.
Please continue to refer to Fig. 3.Each pixel unit of pel array includes a lenticule 16, the color filter 15, light and leads to
21 part of metal layer in road 14, PD13 and corresponding circuits structure 22, pixel unit are arranged in order composition pel array.In reality
Silicon base layer 12, metal layer 21 are integrally processed using existing process, then make color on silicon base layer 12 in making
Filter layer 20 and microlens layer 19.Lenticule 16, the color filter 15, optical channel 14 and the light sensitive diode 13 of pixel unit are formed
The light path of incident light conduction (hollow arrow is signified in such as figure).
Please continue to refer to Fig. 3.The pixel unit of pel array is formed into pixel by the arrangement mode of 3 × 3 of odd number
Unit group, and formed whole pel array by unit repeated arrangement of pixel unit group.Shown in figure is 2 pixel unit groups
In each 3 pixel units therein positioned at middle row structure (metal layer and silicon base layer in the pixel unit group of 1, right side
Make omission processing), in pixel unit group centered on 1 middle pixel unit pixel unit, around center pixel unit
Surrounding is arranged with 8 surrounding pixel units.Center pixel unit has the vertical light in the vertical irradiation direction parallel to incident light
Road, 8 surrounding pixel units have the inclination light path in the vertical irradiation direction for favouring incident light.Around 8 light paths are inclined
Pixel unit is arranged in around the vertical center pixel unit of light path, exports the incident light of pixel unit group position acquisition jointly
By force.
Please continue to refer to Fig. 3.The light path of 8 surrounding pixel units is relative to the light path of center pixel unit by identical outer
The angle 17 that inclines is obliquely installed, i.e. the lateral direction of surrounding pixel unit towards center pixel unit is symmetrically obliquely installed, forming face
To the bell shape of incident light direction.The vertex 23 of each angle 17 formed respectively intersects at a point, and ensure that around 8
The symmetry of the light path incline direction of pixel unit.Lenticule, the color filter, the optical channel and photosensitive two of each surrounding pixel unit
Pole pipe is similarly set by the angle tilt identical with flare angle 17, that is, micro- in each surrounding pixel unit light path
Mirror, the color filter, optical channel and light sensitive diode are overall symmetrically to deflect identical angle to the lateral direction of center pixel unit
Degree.The outer junction 18 of the lenticule of 9 pixel units in each pixel unit group forms convex surface shape, makes each light path
In lenticule, the color filter, optical channel and light sensitive diode keep original shapes and sizes, and using the color filter to connect
Point close-packed arrays, avoid having an impact original opto-electronic conversion performance.Flare angle 17 should be less than the half of pick-up lens visual angle
Angle, otherwise, the surrounding pixel unit positioned at whole pel array edge will cannot gather the light of oblique incidence.For example, for
36 millimeters of mainstream camera lens, its visual angle be calculated as 89 degree, then half angle of view is 44.5 degree, i.e. the light path of surrounding pixel unit is inclined
Rake angle should be less than 44.5 degree, can just ensure the surrounding pixel unit positioned at whole pel array edge can gather tilt into
The light penetrated.
In the present embodiment, the color filter array of pel array presses Bayer moulds in units of above-mentioned pixel unit group
Formula is arranged to make up.The composition of the color filter array of pel array in the present embodiment is illustrated below by Fig. 2 and Fig. 5
Mode.
Referring to Fig. 2, Fig. 2 is the CFA pattern diagrams of Bayer pattern.As shown in Fig. 2, form the pixel of pel array
The color filter 10 of unit presses graphic form arrangement form color filter array 11.Red filter is represented with letter r, G represents green
Color filter, B represent blue filter, in a kind of color filter array of spread pattern of Bayer pattern, the color of pixel unit
Filter according to the first row RGRG ..., the second row GBGB ... and so on form arrange.Bayer pattern also has other 3
Kind of color filter array form, i.e., according to the first row GRGR ..., the second row BGBG ... and so on form arrange；Or press
According to the first row GBGB ..., the second row RGRG ... and so on form arrange；And according to the first row BGBG ..., second
Row GRGR ... and so on form arrangement.In the following, by taking the first above-mentioned spread pattern of Bayer pattern as an example, come detailed
Illustrate the constituted mode of the color filter array of pel array in the present embodiment.
Referring to Fig. 5, Fig. 5 is the CFA patterns of the embodiment of the present invention one and the CMOS image pixel array in embodiment two
Schematic diagram.As shown in figure 5, form arranges 4 pixel unit groups 27,28,31 and 32 as shown, it is complete in each pixel unit group
9, portion pixel unit uses the color filter of the wherein same color in red, green, blue ternary mass-tone, i.e. pixel list
All 9 pixel units 29 in tuple 28 use red color filters, all 9 pixel units 30 in pixel unit group 31
Using green color filter, all 9 pixel units 34 in pixel unit group 27 use green color filter, pixel unit group
All 9 pixel units 33 in 32 use Blue filter.
Please continue to refer to Fig. 5.The image pixel array of the present embodiment is in the form of in units of pixel unit group, according to figure
Pattern of rows and columns of the color filter array of 2 Bayer pattern is formed.I.e. according to：The first row RRRGGG ..., the second row
RRRGGG ..., the third line RRRGGG ..., fourth line GGGBBB ..., fifth line GGGBBB ..., the 6th row
GGGBBB ... and so on form arrangement.That is, the image pixel array of the present embodiment is with pixel unit group
Form substitutes the single pixel unit in Bayer pattern, to be arranged to make up color filter array according to Bayer pattern.
Since the light path of partial pixel unit has certain inclination angle, pel array of the invention is for each side
To the light of incidence, its complex sensitivitg greatly improves, i.e., the light of vertical incidence can be gathered a pixel unit group position
Line, and the light of oblique incidence can be gathered.Since the inclined incident ray in part also can be in the case of less reflection along inclination
Light path arrive at light sensitive diode, make response of these pixel units to the light of oblique incidence be improved significantly so that greatly
The big lightsensitivity for improving pel array entirety.For whole image system, in camera lens module edge, the prior art
Pel array can collect obvious light attenuation, i.e. " dark angle " phenomenon, and the pel array of the present invention being capable of high degree
Optimization such case, export more bright, relatively sharp image in edge.
Embodiment two
In the present embodiment, referring to Fig. 4, Fig. 4 is the structure of the CMOS image pixel array in the embodiment of the present invention two
Schematic diagram.As shown in figure 4, being with the difference of embodiment one, the light path of 8 surrounding pixel units is relative to center pixel
The light path (hollow arrow meaning represents optical path direction in figure) of unit is obliquely installed by identical introversion angle 24, i.e. surrounding pixel
The interior direction of unit towards center pixel unit is symmetrically obliquely installed, and forms the bell shape backwards to incident light direction.Point
The vertex 25 for each angle not formed equally intersects at a point, and ensure that the light path incline direction of 8 surrounding pixel units
Symmetry.Lenticule, the color filter, optical channel and the light sensitive diode of each surrounding pixel unit are similarly pressed and introversion angle phase
Same angle tilt is set, that is, lenticule, the color filter, optical channel and photosensitive two pole in each surrounding pixel unit light path
Pipe is overall symmetrically to deflect identical angle to the interior direction of center pixel unit.9 pixels in each pixel unit group
The outer junction 26 of the lenticule of unit forms concave surface curve form, leads to the lenticule 16 in each light path, the color filter 15, light
Road 14 and light sensitive diode 13 keep original shapes and sizes, and using the color filter as tie point close-packed arrays, avoid to original
Some opto-electronic conversion performances have an impact.The image pixel array of the present embodiment is equally to form color filter according to the pattern of Fig. 5
Lens array.The difference of the present embodiment and the incline direction of the light path for differing only in each surrounding pixel unit of embodiment one, its
His aspect is essentially identical, therefore is not repeated to be described in detail.
Embodiment three
In the present embodiment, referring to Fig. 6, Fig. 6 is the structure of the CMOS image pixel array in the embodiment of the present invention three
Schematic diagram.As shown in fig. 6, being with the difference of embodiment one, pixel unit is the arrangement side of 4 × 4 by even number
Formula forms pixel unit group, and is formed pel array by unit repeated arrangement of pixel unit group.Shown in figure is 2 pixels
The arrangement architecture of each 4 pixel units therein for being located at the second row is (to the metal layer and silicon in pixel unit group in unit group
Basic unit makees omission processing), using 2 × 2 pixel units as center pixel unit in each pixel unit group, other 12 pixels
Unit surrounds center pixel unit arrangement form surrounding pixel unit.4 center pixel units have hanging down parallel to incident light
The vertical optical path of straight direction of illumination, 12 surrounding pixel units have the inclination light path in the vertical irradiation direction for favouring incident light
(hollow arrow meaning represents optical path direction in figure).It is vertical that the inclined surrounding pixel unit of 12 light paths is arranged in 4 light paths
Around center pixel unit, the incident intensity of pixel unit group position acquisition is exported jointly.
Please continue to refer to Fig. 6.The light of 3 surrounding pixel units corresponding with each center pixel unit in pixel unit group
Road is obliquely installed relative to the light path of the center pixel unit by identical flare angle 35, i.e., and whole 12 in pixel unit group
The lateral direction of a surrounding pixel unit towards 4 center pixel units is symmetrically obliquely installed, and is formed towards incident light direction
Bell shape.The top for 3 angles that the light path of 3 surrounding pixel units is formed respectively with the light path of corresponding center pixel unit
Point 37 intersects at a point, also, all the vertex 38 of 12 angles also intersects at a point, and ensure that the light path of surrounding pixel unit
The symmetry of incline direction.Lenticule, the color filter, optical channel and the light sensitive diode of each surrounding pixel unit similarly press with
The identical angle tilt of flare angle 35 is set, that is, in pixel unit group it is micro- in 12 surrounding pixel unit light paths
Mirror, the color filter, optical channel and light sensitive diode integrally symmetrically deflect identical to the lateral direction of 4 center pixel units
Angle.The outer junction 36 of the lenticule of 16 pixel units in each pixel unit group forms convex surface shape, makes each
Lenticule 16, the color filter 15, optical channel 14 and light sensitive diode 13 in light path keep original shapes and sizes, and with face
Color filter is tie point close-packed arrays, avoids having an impact original opto-electronic conversion performance.
The constituted mode of the color filter array of pel array in the present embodiment is illustrated below by Fig. 8.
Referring to Fig. 8, Fig. 8 is the CFA patterns of the CMOS image pixel array in the embodiment of the present invention three and example IV
Schematic diagram.As shown in figure 8,16 pixel units form 1 pixel unit group 41 in a manner of 4 × 4.Each center pixel unit with
Its peripheral 3 corresponding surrounding pixel unit is jointly using the wherein same color in red, green, blue ternary mass-tone
The color filter, i.e. center pixel unit 43 surrounding pixel unit 42 corresponding with its periphery 3 use red color filter, center
Pixel unit 44 and its corresponding surrounding pixel unit 45 in periphery 3 use green color filter, center pixel unit 48 and its
The corresponding surrounding pixel unit 49 in periphery 3 uses green color filter, center pixel unit 47 and its peripheral 3 corresponding week
Enclose pixel unit 46 and use Blue filter.
Please continue to refer to Fig. 8.The image pixel array of the present embodiment is with 1 center pixel unit in pixel unit group
The form combined with its corresponding surrounding pixel unit in periphery 3 for 4 pixel units of unit, is arranged by the Bayer pattern of Fig. 2
Row form the color filter array of pel array.I.e. according to：The first row RRGG ..., the second row RRGG ..., the third line
GGBB ..., fourth line GGBB ... and so on form arrangement.That is, the image pixel array of the present embodiment be by
Divide equally in four quadrants by totally 16 pixel units by 4 × 4 of pixel unit group.First quartile includes 4 pixel units, wherein 1
A is center pixel unit 44, other are the peripheral 3 corresponding surrounding pixel units 45 of the center pixel unit, second and third, four
Quadrant and so on.And using 4 pixel units of each quadrant as one group, 4 pixel units in one group use same face
The color filter of color, substitutes the single pixel unit in Bayer pattern, according to Bayer pattern in the form of in units of this group
It is arranged to make up color filter array.
Using the present embodiment can realize with embodiment one similar in technique effect, difference lies in the pixel of the present embodiment
The vertical pixel unit increasing proportion of light path in array, so, the collection effect of vertical incidence light is improved.The present embodiment
Other aspects it is essentially identical with embodiment one, therefore be not repeated to be described in detail.
Example IV
In the present embodiment, referring to Fig. 7, Fig. 7 is the structure of the CMOS image pixel array in the embodiment of the present invention four
Schematic diagram.As shown in fig. 7, it is with the difference of embodiment three, 3 surrounding pixels corresponding with each center pixel unit
The light path of unit is obliquely installed relative to the light path of the center pixel unit by identical introversion angle 39, i.e. pixel unit
The interior direction of all 12 surrounding pixel units towards 4 center pixel units in group is symmetrically obliquely installed, and is formed backwards
The bell shape of incident light direction.The outer junction 40 of the lenticule of 16 pixel units in each pixel unit group forms recessed
Face curve form, makes the lenticule 16 in each light path, the color filter 15, optical channel 14 and light sensitive diode 13 keep original
Shapes and sizes, and using the color filter as tie point close-packed arrays, avoid having an impact original opto-electronic conversion performance.This reality
The image pixel array for applying example is equally to form color filter array according to the pattern of Fig. 8.The present embodiment and the area of embodiment three
The difference of the incline direction of the light path of each surrounding pixel unit is not only that, other aspects are essentially identical, therefore are not repeated to be described in detail.
It is above-described to be merely a preferred embodiment of the present invention, the embodiment and the patent guarantor for being not used to the limitation present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made are protected, similarly should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of pel array of the inclined cmos image sensor of light path, the pel array is back-illuminated type pel array, institute
Lenticule, the color filter, optical channel and the light sensitive diode for stating optical routing pixel unit are formed, it is characterised in that the pixel
The quantity of unit is represented with n, and pixel unit group, and the weight in units of the pixel unit group are formed by the arrangement modes of n × n
The pel array is arranged to make up again, and the n is the odd number not less than 3, with (n-2) × (n- in each pixel unit group
2) pixel unit centered on a pixel unit, remaining described pixel unit surround the center pixel unit arrangement form
Surrounding pixel unit；The whole pixel unit in each pixel unit group is filtered using the color of same color
Mirror, the color filter array of the pel array are arranged to make up in units of the pixel unit group by bayer-pattern；In described
Heart pixel unit has the light path in the vertical irradiation direction parallel to incident light, and the surrounding pixel unit, which has, to be favoured
The light path in the vertical irradiation direction of the incident light, and the lenticule of each surrounding pixel unit, the color filter,
Optical channel and light sensitive diode are obliquely installed at the same angle.
2. pel array as claimed in claim 1, it is characterised in that the light path of each surrounding pixel unit relative to
The light path of the center pixel unit is obliquely installed by identical flare angle, each surrounding pixel unit it is described micro-
Lens, the color filter, optical channel and light sensitive diode are set by the angle tilt identical with the flare angle.
3. pel array as claimed in claim 2, it is characterised in that each pixel list in each pixel unit group
The outer junction of the lenticule of member forms convex surface shape.
4. pel array as claimed in claim 1, it is characterised in that the light path of each surrounding pixel unit relative to
The light path of the center pixel unit is obliquely installed by identical introversion angle, each surrounding pixel unit it is described micro-
Lens, the color filter, optical channel and light sensitive diode are set by the angle tilt identical with the introversion angle.
5. pel array as claimed in claim 4, it is characterised in that each pixel list in each pixel unit group
The outer junction of the lenticule of member forms concave surface curve form.
6. a kind of pel array of the inclined cmos image sensor of light path, the pel array is back-illuminated type pel array, institute
Lenticule, the color filter, optical channel and the light sensitive diode for stating optical routing pixel unit are formed, it is characterised in that the pixel
The quantity of unit is represented with n, and pixel unit group, and the weight in units of the pixel unit group are formed by the arrangement modes of n × n
The pel array is arranged to make up again, and the n is the even number not less than 4, with (n-2) × (n- in each pixel unit group
2) pixel unit centered on a pixel unit, remaining described pixel unit surround the center pixel unit arrangement form
Surrounding pixel unit；The whole pixel unit of the pixel unit group is divided equally in four quadrants of plane coordinate system,
The whole pixel unit in each quadrant uses described the color filter of same color, the face of the pel array
Color filter array is arranged to make up in units of the whole pixel unit in each quadrant by bayer-pattern；The center
Pixel unit has the light path in the vertical irradiation direction parallel to incident light, and the surrounding pixel unit, which has, favours institute
State the light path in the vertical irradiation direction of incident light, and the lenticule, the color filter, the light of each surrounding pixel unit
Passage and light sensitive diode are obliquely installed at the same angle.
7. pel array as claimed in claim 6, it is characterised in that the light path of each surrounding pixel unit relative to
The light path of the center pixel unit is obliquely installed by identical flare angle, each surrounding pixel unit it is described micro-
Lens, the color filter, optical channel and light sensitive diode are set by the angle tilt identical with the flare angle.
8. pel array as claimed in claim 7, it is characterised in that each pixel list in each pixel unit group
The outer junction of the lenticule of member forms convex surface shape.
9. pel array as claimed in claim 6, it is characterised in that the light path of each surrounding pixel unit relative to
The light path of the center pixel unit is obliquely installed by identical introversion angle, each surrounding pixel unit it is described micro-
Lens, the color filter, optical channel and light sensitive diode are set by the angle tilt identical with the introversion angle.
10. pel array as claimed in claim 9, it is characterised in that each pixel in each pixel unit group
The outer junction of the lenticule of unit forms concave surface curve form.
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| KR20170029175A (en) * | 2015-09-07 | 2017-03-15 | 에스케이하이닉스 주식회사 | Image sensor include the phase difference detection pixel |
| CN108055487B (en) * | 2017-12-19 | 2020-02-21 | 清华大学 | Method and system for consistent correction of image sensor array nonuniformity |
| CN110505387B (en) * | 2019-08-29 | 2021-06-11 | Oppo广东移动通信有限公司 | Imaging system, terminal and image acquisition method |
| WO2021042395A1 (en) * | 2019-09-06 | 2021-03-11 | 深圳市汇顶科技股份有限公司 | Fingerprint detection device and electronic apparatus |
| CN115278101B (en) * | 2022-07-29 | 2024-02-27 | 维沃移动通信有限公司 | Shooting method and device and electronic equipment |
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