CN104181401A - Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane - Google Patents
Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane Download PDFInfo
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- CN104181401A CN104181401A CN201310199846.8A CN201310199846A CN104181401A CN 104181401 A CN104181401 A CN 104181401A CN 201310199846 A CN201310199846 A CN 201310199846A CN 104181401 A CN104181401 A CN 104181401A
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Abstract
The invention relates to a testing device and testing method for light dark conductivity of an exclusive single-layer membrane for a high-efficiency heterojunction with intrinsic thin layer (HIT). The testing device comprises a lead, a probe, a sample platform, a dark box, an electrometer, a light source and a shielding case. According to the testing method, two coplanar aluminium electrodes are formed at the surface of a sample by evaporation, wherein the material between the two electrodes is used as the tested sample; the sample is placed at the sealed sampling platform; the programmable electrometer and the light source are connected; and the conductivity of the thin film is calculated based on the current obtained by testing. According to the invention, the testing device and the testing method are simple; the cost is low; and the photoelectric property of the material can be reflected accurately.
Description
Technical field
The present invention relates to solar cell, particularly the exclusive monofilm light of a kind of HIT dark conductance performance test apparatus and method of testing.
Background technology
Thin film silicon/crystalline silicon heterojunction HIT solar cell is a kind of high efficiency crystalline silicon solar cell that can adopt low cost to realize.This solar cell utilizes doping film silicon layer on crystal silicon substrate, to make pn knot.This layer film silicon layer only has tens nanometer thickness conventionally, and can using plasma enhancing chemical vapor deposition (PECVD) technique deposit below at 200 DEG C.Therefore,, than traditional solar cell by diffusion preparation pn knot, the required Energy input of thin film silicon/crystalline silicon heterojunction solar battery is few, and has higher open-circuit voltage, thereby causes very large concern.
The membrane silicon layer of HIT solar cell generally only has tens nanometer thickness, but its film quality has directly affected the efficiency of battery, and the quality of its photoelectric properties is related to the photoelectric properties of thin-film solar cells.For the intrinsic semiconductor film of device quality level, i.e. undoped film, its light sensitive characteristic, has the ratio of irradiation conductivity when without irradiation, should be the bigger the better, and under normal circumstances, the photosensitivity of HIT battery is about 10
5～10
6, when normal light shines, photoconductivity is 10
-5～10
-6s/cm, when unglazed photograph, dark conductivity is 10
-12～10
-11s/cm.There is no in the market light dark conductivity tester finished product releases.
Summary of the invention
Object of the present invention, is the photoelectric properties for material in accurate response film preparation process, proposes testing apparatus and the method for testing of the exclusive monofilm light of a kind of HIT dark conductance performance.
To achieve these goals, the present invention has adopted following technical scheme:
The exclusive monofilm light of a kind of HIT dark conductance performance test apparatus, it comprises:
Sample stage, contains two compressing tablet probes, and whole sample stage is built in a magazine, completely sealing;
Light source, be arranged on sample stage directly over;
Programmable electrometer, is arranged in a little radome, and is connected with two compressing tablet probes with shielded signal line and ground connection;
Large radome, shields above-mentioned sample stage, light source and programmable electrometer interior, and ground connection.
Described light source is bromine tungsten filament lamp or other Halogen lamp LED analog light source.
The method of testing of the exclusive monofilm light of HIT dark conductance performance, first to evaporate two coplanar type aluminium electrodes by monofilm surface in HIT battery preparation process, and then by apply a DC voltage between two strip electrodes, by electrometer read current and calculate the conductivity of film.
Specifically comprise the following steps:
A, open large radome, the sample thin film that test is put on the sample stage of magazine, two compressing tablet probes are contacted respectively to two strip electrodes on sample thin film;
B, close light source, by electrometer, two strip electrodes on sample thin film are applied the DC voltage of 100V, read the dark current I of demonstration
d, pass through formula
calculate the dark conductivity σ of film
d;
C, open light source, irradiate test sample with light source, by electrometer, two strip electrodes on sample thin film are applied the DC voltage of 100V, read the photocurrent I of demonstration
1, pass through formula
calculate the photoconductivity σ of film
1;
D, by photoconductivity σ
1divided by dark conductivity σ
d, obtain the light sensitive characteristic value of film;
In above-mentioned formula, I is loop current, and d is film thickness, and W is electrode separation, and L is electrode length, and V is impressed voltage.
Testing apparatus provided by the invention can accurately be reacted the photoelectric properties of the monofilm in HIT battery preparation process, provides effective means for preparing efficient HIT battery, and equipment is simple and cost is low.
Brief description of the drawings
Fig. 1 is the structural principle schematic diagram of testing apparatus of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Referring to Fig. 1, the exclusive monofilm light of HIT of the present invention dark conductance performance test apparatus, comprises sample stage 2, light source 4, programmable electrometer 3 and large radome 1.Wherein, sample stage 2 contains two compressing tablet probes, and whole sample stage to be built in a magazine (out not shown) inner, sealing completely; Light source 4 be arranged on sample stage 2 directly over; Programmable electrometer 3 is arranged in a little radome (out not shown), and is connected with two compressing tablet probes with shielded signal line and ground connection; Large radome 1 shields above-mentioned sample stage 2, light source 4 and programmable electrometer 3 interior, and ground connection.
The sample of test required for the present invention is in HIT battery preparation process, to deposit to evaporate two parallel coplanar aluminium electrodes of strip after the intrinsic amorphous silicon film of 5nm and form.Sample size is 2 × 2cm
2, the about 1mm of electrode separation (width), is about 2cm, the thickness that thickness is amorphous silicon membrane.Electrometer is selected keithley6517B, and light source is selected the bromine tungsten filament lamp of 100W, and light intensity is 100mW/cm
2.
The method of testing of the exclusive monofilm light of HIT dark conductance performance, is by applying a DC voltage between two strip electrodes on sample thin film, by electrometer read current and calculate the conductivity of film.
Specifically comprise the following steps:
Open large radome 1, the sample that test put into 2 li of the sample stages of magazine, contact two strip electrodes with compressing tablet probe, then with little radome in electrometer 3 join.
First close bromine tungsten filament lamp light source 4, open electrometer 3, by two electrodes are applied to DC voltage 100V, then read corresponding current value by electrometer, and calculate film conductivity now by formula, be i.e. dark conductivity σ
d.
Open magazine lid, open bromine tungsten filament lamp light source 4, now sample is in the condition that has illumination, and then open electrometer, by two electrodes are applied to DC voltage 100V, read corresponding current value by electrometer, and calculate film conductivity now by formula, i.e. photoconductivity σ
1.
Photoconductivity σ
1with dark conductivity σ
dratio be the light sensitive characteristic value of film, in conjunction with light dark conductivity, can evaluate the performance quality of membraneous material.
Claims (3)
1. the exclusive monofilm light of a HIT dark conductance performance test apparatus, is characterized in that comprising:
Sample stage, contains two compressing tablet probes, and whole sample stage is built in a magazine, completely sealing:
Light source, be arranged on sample stage directly over;
Programmable electrometer, is arranged in a little radome, and is connected with two compressing tablet probes with shielded signal line and ground connection;
Large radome, shields above-mentioned sample stage, light source and programmable electrometer interior, and ground connection.
2. the testing apparatus of the exclusive monofilm light of HIT dark conductance performance according to claim 1, is characterized in that, described light source is bromine tungsten filament lamp or other Halogen lamp LED analog light source.
3. the method for testing of the exclusive monofilm light of the HIT dark conductance performance that testing apparatus is carried out according to claim 1, is characterized in that, comprises the following steps:
A, open large radome, the sample thin film that test is put on the sample stage of magazine, two compressing tablet probes are contacted respectively to two strip electrodes on sample thin film;
B, close light source, by electrometer, two strip electrodes on sample thin film are applied the DC voltage of 100V, read the dark current I of demonstration
d, pass through formula
calculate the dark conductivity σ of film
d;
C, open light source, irradiate test sample with light source, by electrometer, two strip electrodes on sample thin film are applied the DC voltage of 100V, read the photocurrent I of demonstration
1, pass through formula
calculate the photoconductivity σ of film
1;
D, by photoconductivity σ
1divided by dark conductivity σ
d, obtain the light sensitive characteristic value of film;
In above-mentioned formula, I is loop current, and d is film thickness, and W is electrode separation, and L is electrode length, and V is impressed voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310199846.8A CN104181401A (en) | 2013-05-24 | 2013-05-24 | Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310199846.8A CN104181401A (en) | 2013-05-24 | 2013-05-24 | Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104181401A true CN104181401A (en) | 2014-12-03 |
Family
ID=51962618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310199846.8A Pending CN104181401A (en) | 2013-05-24 | 2013-05-24 | Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane |
Country Status (1)
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|---|---|
| CN (1) | CN104181401A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104535824A (en) * | 2015-01-06 | 2015-04-22 | 吉林大学 | Testing system and method for critical current density of high temperature superconductor film material |
| CN109283394A (en) * | 2018-10-23 | 2019-01-29 | 中山大学 | A kind of brightness conductivity and activation energy measuring system and method |
| CN110057842A (en) * | 2019-05-31 | 2019-07-26 | 苏州大学 | It is a kind of for detecting the device of semiconductor material X-ray performance |
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| CN1083935A (en) * | 1993-08-23 | 1994-03-16 | 浙江大学 | Adopt the liquid crystal light valve and the manufacture method thereof of crystalline silicon film shading layer |
| US6771083B1 (en) * | 2002-03-19 | 2004-08-03 | Sandia Corporation | Poole-frenkel piezoconductive element and sensor |
| CN101903562A (en) * | 2007-12-19 | 2010-12-01 | 东京毅力科创株式会社 | Photo-electric conversion element manufacturing installation and method and photo-electric conversion element |
| CN102539930A (en) * | 2012-01-19 | 2012-07-04 | 蚌埠玻璃工业设计研究院 | Method for testing photoelectric performance of semiconductor thin film |
| CN203337733U (en) * | 2013-05-24 | 2013-12-11 | 上海太阳能工程技术研究中心有限公司 | HIT special-purpose monolayer film light dark electric conduction performance test device |
-
2013
- 2013-05-24 CN CN201310199846.8A patent/CN104181401A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1083935A (en) * | 1993-08-23 | 1994-03-16 | 浙江大学 | Adopt the liquid crystal light valve and the manufacture method thereof of crystalline silicon film shading layer |
| US6771083B1 (en) * | 2002-03-19 | 2004-08-03 | Sandia Corporation | Poole-frenkel piezoconductive element and sensor |
| CN101903562A (en) * | 2007-12-19 | 2010-12-01 | 东京毅力科创株式会社 | Photo-electric conversion element manufacturing installation and method and photo-electric conversion element |
| CN102539930A (en) * | 2012-01-19 | 2012-07-04 | 蚌埠玻璃工业设计研究院 | Method for testing photoelectric performance of semiconductor thin film |
| CN203337733U (en) * | 2013-05-24 | 2013-12-11 | 上海太阳能工程技术研究中心有限公司 | HIT special-purpose monolayer film light dark electric conduction performance test device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104535824A (en) * | 2015-01-06 | 2015-04-22 | 吉林大学 | Testing system and method for critical current density of high temperature superconductor film material |
| CN104535824B (en) * | 2015-01-06 | 2017-04-19 | 吉林大学 | Testing system and method for critical current density of high temperature superconductor film material |
| CN109283394A (en) * | 2018-10-23 | 2019-01-29 | 中山大学 | A kind of brightness conductivity and activation energy measuring system and method |
| CN109283394B (en) * | 2018-10-23 | 2021-07-02 | 中山大学 | System and method for measuring light-dark conductivity and activation energy |
| CN110057842A (en) * | 2019-05-31 | 2019-07-26 | 苏州大学 | It is a kind of for detecting the device of semiconductor material X-ray performance |
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Application publication date: 20141203 |