CN104181026B - Indium phosphide cutting sheet chemical polishing solution and the dislocation assay method of indium phosphide cutting sheet - Google Patents
Indium phosphide cutting sheet chemical polishing solution and the dislocation assay method of indium phosphide cutting sheet Download PDFInfo
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- CN104181026B CN104181026B CN201410426888.5A CN201410426888A CN104181026B CN 104181026 B CN104181026 B CN 104181026B CN 201410426888 A CN201410426888 A CN 201410426888A CN 104181026 B CN104181026 B CN 104181026B
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- 238000005498 polishing Methods 0.000 title claims abstract description 108
- 239000000126 substance Substances 0.000 title claims abstract description 86
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000005520 cutting process Methods 0.000 title claims abstract description 41
- 238000003556 assay method Methods 0.000 title claims abstract description 22
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 190
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 114
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 95
- CPELXLSAUQHCOX-UHFFFAOYSA-N hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims abstract description 85
- 238000005260 corrosion Methods 0.000 claims abstract description 77
- 239000007788 liquid Substances 0.000 claims abstract description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 28
- 238000002360 preparation method Methods 0.000 claims abstract description 28
- 239000012530 fluid Substances 0.000 claims abstract description 16
- 238000005259 measurement Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000002178 crystalline material Substances 0.000 abstract description 4
- 239000008367 deionised water Substances 0.000 description 23
- 239000002253 acid Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 125000004429 atoms Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 231100000078 corrosive Toxicity 0.000 description 1
- 231100001010 corrosive Toxicity 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 229910052904 quartz Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004223 radioprotective Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Abstract
The invention discloses a kind of indium phosphide cutting sheet chemical polishing solution and the dislocation assay method of indium phosphide cutting sheet, belong to semiconductor crystalline material technical field.Polishing fluid is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide.The dislocation assay method of indium phosphide cutting sheet, comprises the following steps: (1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；(2) indium phosphide cutting sheet put into and carry out chemical polishing corrosion in described polishing fluid, after chemical polishing corrosion, taking-up water cleans up, and is dried；(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；(4) being put into by step (2) dried cutting sheet in dislocation corrosion liquid and corrode, after etching, taking-up water cleans, and is dried, utilizes measurement microscope dislocation density.The present invention can quickly measure the dislocation density in crystal, and operating process technique is simple, and economical and efficient is not affected by crystal shape.
Description
Technical field
The present invention relates to semiconductor crystalline material technical field, especially cutting sheet measuring dislocation density technical field.
Background technology
Indium phosphide (InP) is a kind of particularly important III-V group semi-conductor material, compared with silicon and GaAs, owing to it has the characteristic such as higher electronics average drift velocity, high electro-optical efficiency and high capability of resistance to radiation under higher breakdown electric field, High-Field, it is made to be widely used, such as devices such as InP-base laser diode, light emitting diode, photo-detector, transistors in many high-tech sectors such as Terahertz, optic communication, microwave, millimetric wave device, radioprotective solaode.
Dislocation is the microdefect in a kind of crystal.In semiconductor crystalline material, due to the change of lattice structure around dislocation line, can cause between forbidden band and conduction band, forming new carrying, thus change the band structure of quasiconductor；Dislocation line is likely to become the trapping centre of semiconductor carriers, thus changes carrier transport characteristic parameter；During utilizing semiconducting crystal substrate extension, dislocation line can be bred in epitaxial layer, thus reduces the crystal mass of epitaxial layer, affects physical characteristic and the life-span of device.Further, since the existence of stress field, impurity or foreign atom are enriched with near dislocation line near dislocation, affect the uniformity of crystal property.Dislocation line is likely to reduce the resistivity of crystalline material and increase the diffusion coefficient of crystal.When carrying out crystal growth, the dislocation of seed crystal can extend in crystal, increases the dislocation density of crystal, and the crystal of high dislocation is more readily formed fault and grain boundary defects in growth course.Thus the dislocation density in semi-conducting material is one of important parameter weighing growth crystal mass.
People add up the dislocation density of crystal at present is to corrode the cutting sheet after chemically mechanical polishing to disclose, and chemically-mechanicapolish polish and need the operations such as grinding, chamfering, sticky wax, paster, rough polishing, half finishing polish, finishing polish, complex process, cycle length and irregular wafer are difficult to processing, it is more difficult to carry out dislocation density measurement.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of indium phosphide cutting sheet chemical polishing solution and the dislocation assay method of indium phosphide cutting sheet, can quickly measure the dislocation density in crystal, and operating process technique is simple, and economical and efficient is not affected by crystal shape.
For solving above-mentioned technical problem, the technical solution used in the present invention is: a kind of indium phosphide cutting sheet chemical polishing solution, is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide.
The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1～3:1～6:1～4；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
Preferably the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1～2:2～5:1～2.
The dislocation assay method of indium phosphide cutting sheet, it is characterised in that comprise the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；
First phosphoric acid can be poured in container, then hydrobromic acid is poured slowly into wherein, indium phosphide be cut in the mixed liquor that sheet puts into above two acid, pour hydrogen peroxide again into, because hydrobromic acid high volatility, therefore first put phosphoric acid, put hydrobromic acid again, and hydrogen peroxide can react with hydrobromic acid, therefore finally put hydrogen peroxide；
(2) indium phosphide cutting sheet put into and carry out chemical polishing corrosion in described polishing fluid, after chemical polishing corrosion, taking-up water cleans up, and is dried；
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；
(4) being put into by step (2) dried cutting sheet in dislocation corrosion liquid and corrode, after etching, taking-up water cleans, and is dried, utilizes measurement microscope dislocation density.
In step (1), the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1～3:1～6:1～4；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
Preferably in step (1), the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1～2:2～5:1～2.
Chemical polishing etching time in step (2) is 2～6 minutes.
In step (3), phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
In step (4), etching time is 3～6 minutes.
The model of optical microscope used by the present invention is Olympus BX51.
Using and have the beneficial effects that produced by technique scheme: the dislocation density that the inventive method can quickly be measured in crystal, operating process technique is simple, and economical and efficient is not affected by crystal shape.
The present invention can be also used in rough grinding pass prepared by indium phosphide polishing wafer, and the corner angle many due to surface are corroded, it is possible to reduce the consumption of polishing cloth.Furthermore it is possible to the dislocation detection before mechanical polishing.
Before polishing, cutting sheet surface irregularity (see accompanying drawing 1)；With polishing fluid surface of polished of the present invention smooth (see figure accompanying drawing 2)；After corrosion dislocation, dislocation pit is clear, for the dislocation pit pattern (see figure accompanying drawing 3) of typical (100) crystal face, can directly calculate dislocation density by these dislocation pits.
Accompanying drawing explanation
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.
Fig. 1 is the surface topography of indium phosphide cutting sheet；
Fig. 2 is the surface topography after indium phosphide cutting sheet chemical polishing corrosion；
After Fig. 3 is chemical polishing corrosion, the surface dislocation hole pattern obtained by dislocation corrosion.
Detailed description of the invention
Embodiment 1
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:2:1；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 3 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 2
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:2:1；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide cuts sheet to be placed on fixture, fixture is quartz material, indium phosphide with fixture is cut sheet and puts in vessel, by phosphoric acid, the ratio mixing of hydrobromic acid by volume percentage ratio 1:2, stir and pour in above-mentioned vessel, hydrogen peroxide is poured slowly in above-mentioned vessel, and whole vessel are placed on the unobstructed place of air draft, when hydrobromic acid mixes with hydrogen peroxide, chemical reaction can be produced, discharge substantial amounts of heat, it is water-cooled outside vessel, to reduce temperature, corrode 3 minutes, open vessel cover and take out indium phosphide cutting sheet, put into rapidly in deionized water and clean, rapidly the corrosive liquid of residual is washed by deionized water, in order to avoid continuing corrosion in atmosphere, plane of crystal is made to produce the deposit of chemical reaction, to prevent from being brought in dislocation corrosion liquid remnants polishing fluid, affect dislocation corrosion process.By being dried, the water on wafer can being removed, in order to avoid affecting next step dislocation corrosion, causing dislocation corrosion uneven.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer being dried after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 3
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:2:1；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 3 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.First phosphoric acid is poured in container during use, then hydrobromic acid is poured slowly into wherein, indium phosphide is cut in the mixed liquor that sheet puts into above two acid, then pour hydrogen peroxide into.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 4
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:2:1；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 6 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 5
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:3:2；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 3 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 6
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:3:2；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 6 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 7
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 2:4:1；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 3 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 8
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 2:4:1；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 6 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 9
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 2:5:1；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 2 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 6 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 10
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 2:6:1；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 5 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 4 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Embodiment 11
The dislocation assay method of indium phosphide cutting sheet, comprises the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 3:6:4；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
(2) indium phosphide with fixture being cut sheet to put into and carry out chemical polishing corrosion in described polishing fluid, chemical polishing etching time is 3 minutes, takes out to put into rapidly in deionized water and cleans, be dried after chemical polishing corrosion.
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；Phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
(4) being placed on fixture by the inp wafer after described chemical polishing, put in dislocation corrosion liquid and corrode 3 minutes, after etching, taking-up deionized water cleans rapidly, is dried, and utilizes metallurgical microscope to measure dislocation density.
Claims (7)
1. an indium phosphide cutting sheet chemical polishing solution, it is characterised in that: it is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；
The volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1～3:1～6:1～4；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
Indium phosphide the most according to claim 1 cutting sheet chemical polishing solution, it is characterised in that: the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1～2:2～5:1～2.
3. the dislocation assay method of indium phosphide cutting sheet, it is characterised in that comprise the following steps:
(1) preparation chemical polishing solution, chemical polishing solution is made up of phosphoric acid, hydrobromic acid and hydrogen peroxide；
(2) indium phosphide cutting sheet put into and carry out chemical polishing corrosion in described polishing fluid, after chemical polishing corrosion, taking-up water cleans up, and is dried；
(3) preparation dislocation corrosion liquid: dislocation corrosion liquid is made up of phosphoric acid and hydrobromic acid；
(4) being put into by step (2) dried cutting sheet in dislocation corrosion liquid and corrode, after etching, taking-up water cleans, and is dried, utilizes measurement microscope dislocation density；
In step (1), the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1～3:1～6:1～4；Phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%, and hydrogen peroxide mass fraction is 30%.
The dislocation assay method of indium phosphide the most according to claim 3 cutting sheet, it is characterised in that: in step (1), the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1～2:2～5:1～2.
The dislocation assay method of indium phosphide the most according to claim 3 cutting sheet, it is characterised in that: the chemical polishing etching time in step (2) is 2～6 minutes.
The dislocation assay method of indium phosphide the most according to claim 3 cutting sheet, it is characterised in that: in step (3), phosphoric acid and hydrobromic volume ratio are 1:2, and phosphoric acid quality mark is 85%, and hydrobromic acid mass fraction is 40%.
The dislocation assay method of indium phosphide the most according to claim 3 cutting sheet, it is characterised in that: in step (4), etching time is 3～6 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410426888.5A CN104181026B (en) | 2014-08-27 | Indium phosphide cutting sheet chemical polishing solution and the dislocation assay method of indium phosphide cutting sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410426888.5A CN104181026B (en) | 2014-08-27 | Indium phosphide cutting sheet chemical polishing solution and the dislocation assay method of indium phosphide cutting sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104181026A CN104181026A (en) | 2014-12-03 |
| CN104181026B true CN104181026B (en) | 2017-01-04 |
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