CN104178727A - Conductive film and preparation method and application thereof - Google Patents

Conductive film and preparation method and application thereof Download PDF

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Publication number
CN104178727A
CN104178727A CN201310192124.XA CN201310192124A CN104178727A CN 104178727 A CN104178727 A CN 104178727A CN 201310192124 A CN201310192124 A CN 201310192124A CN 104178727 A CN104178727 A CN 104178727A
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layer
tio
conductive film
target
moo
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周明杰
王平
陈吉星
冯小明
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Abstract

A conductive film comprises a TiO2-xFx layer and a MoO3 layer which are stacked up, wherein x is 0.1-0.6. According to the above conductive film, the MoO3 layer with high work function is deposited on the surface of the TiO2-xFx layer to prepare a double-layered conductive film. Good conductivity of the TiO2-xFx layer can be maintained, and work function of the conductive film also can be raised remarkably. The invention also provides a preparation method and an application of the conductive film.

Description

Conductive film, its preparation method and application
Technical field
The present invention relates to photoelectric semiconductor material, particularly relate to conductive film, its preparation method, use substrate, its preparation method and the organic electroluminescence device of the organic electroluminescence device of this conductive film.
Background technology
Conductive film electrode is the basic component of organic electroluminescence device (OLED), and the quality of its performance directly affects the luminous efficiency of whole device.Wherein, the doped semiconductor of Cadmium oxide is Recent study transparent conductive film material the most widely, has higher visible light transmittance rate and low resistivity.But improve the luminous efficiency of device, require transparent conductive film anode to there is higher surface work function.And the work function of the zinc oxide of aluminium, gallium and indium doping generally only has 4.3eV, through also reaching 4.5～5.1eV after the processing such as UV optical radiation or ozone, also has larger energy level difference distance with the HOMO energy level (being typically 5.7～6.3eV) of general organic luminous layer, cause the increase of carrier injection potential barrier, hinder the raising of luminous efficiency.
Summary of the invention
Based on this, be necessary the problem lower for conductive film work function, a kind of transparent conductive film, its preparation method of nano wire, the substrate that uses the organic electroluminescence device of this conductive film, its preparation method and organic electroluminescence device are provided.
A kind of conductive film, comprises stacked TiO 2-xf xlayer and MoO 3layer, wherein, x is 0.1～0.6.
Described conductive film is the conductive film of nano thread structure, and described nanowire diameter is 70nm～600nm.
Described TiO 2-xf xthe thickness of layer is 30nm～550nm, described MoO 3the thickness of layer is 0.5nm～5nm.
A preparation method for conductive film, comprises the following steps:
By TiO 2-xf xtarget and MoO 3target and substrate pack the vacuum cavity of magnetic-controlled sputtering coating equipment into, and wherein, the vacuum tightness of vacuum cavity is 1.0 × 10 -3pa～1.0 × 10 -5pa, wherein, x is 0.1～0.6;
At described substrate surface sputter TiO 2-xf xlayer, TiO described in sputter 2-xf xthe processing parameter of layer is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C;
At described TiO 2-xf xthe surperficial sputter MoO of layer 3layer, Pr described in sputter 2o 3the processing parameter of layer is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C; And
Peel off described substrate, obtain described conductive film.
Described TiO 2-xf xtarget is obtained by following steps: by TiO 2and TiF 4powder mixes, wherein, and described TiF 4the molecular fraction that accounts for mixed powder is 2.6%～17.6%, and the powder mixing sintering at 900 DEG C～1300 DEG C is made to target.
A substrate for organic electroluminescence device, comprises the substrate stacking gradually, stacked TiO 2-xf xlayer and MoO 3layer, wherein, x is 0.1～0.6.
Conductive film in described substrate is the conductive film of nano thread structure, and described nanowire diameter is 70nm～600nm.
A preparation method for the substrate of organic electroluminescence device, comprises the following steps:
By TiO 2-xf xtarget and MoO 3target and substrate pack the vacuum cavity of magnetic-controlled sputtering coating equipment into, and wherein, the vacuum tightness of vacuum cavity is 1.0 × 10 -3pa～1.0 × 10 -5pa, wherein, x is 0.1～0.6;
At described substrate surface sputter TiO 2-xf xlayer, TiO described in sputter 2-xf xthe processing parameter of layer is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C;
At described TiO 2-xf xthe surperficial sputter MoO of layer 3layer, MoO described in sputter 3the processing parameter of layer is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C.
The TiO of institute 2-xf xtarget is obtained by following steps: by TiO 2and TiF 4powder mixes, wherein, and described TiF 4the molecular fraction that accounts for mixed powder is 2.6%～17.6%, and the powder mixing sintering at 900 DEG C～1300 DEG C is made to target.
A kind of organic electroluminescence device, comprises the anode, luminescent layer and the negative electrode that stack gradually, and described anode comprises stacked TiO 2-xf xlayer and MoO 3layer, wherein, x is 0.1～0.6.
Above-mentioned conductive film passes through at TiO 2-xf xthe surface deposition MoO of layer 3the double-deck conductive film of layer preparation, can keep TiO 2-xf xthe good conductivity of layer, makes again the work function of conductive film obtain significant raising, and conductive film is at 300～900nm wavelength region visible light transmissivity 88%～91%, square resistance scope 10～33 Ω/, surface work function 5.2～5.9eV; The preparation method of above-mentioned conductive film, adopt laser ablation target, make the ablated one-tenth atom of material in target or the particle of ionic group, in the process that particle deposits in substrate, by passing into a large amount of rare gas elementes, make particle passivation, on substrate, disperse nucleation, then at each nucleation site vertical-growth, the pillared nano wire of shape; Use the anode of this conductive film as organic electroluminescence device, between the surface work function of conductive film and the HOMO energy level of general organic luminous layer, gap is less, has reduced the injection barrier of current carrier, can improve significantly luminous efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the conductive film of an embodiment;
Fig. 2 is the structural representation of the substrate of the organic electroluminescence device of an embodiment;
Fig. 3 is the structural representation of the organic electroluminescence device of an embodiment;
Fig. 4 is the transmitted spectrum spectrogram of the conductive film prepared of embodiment 1;
Fig. 5 is the electron-microscope scanning figure of the conductive film prepared of embodiment 1;
Fig. 6 is voltage and electric current and the brightness relationship figure of device embodiment.
Embodiment
Below in conjunction with the drawings and specific embodiments, conductive film, its preparation method, the substrate that uses the organic electroluminescence device of this conductive film, its preparation method and organic electroluminescence device are further illustrated.
Refer to Fig. 1, the conductive film 100 of an embodiment comprises stacked TiO 2-xf xlayer 10 and MoO 3layer 30, wherein, x is 0.1～0.6.
Described conductive film 100 is conductive films of nano thread structure, and described nanowire diameter is 70nm～600nm, is preferably 200nm.
Described TiO 2-xf xthe thickness of layer 10 is 30nm～550nm, is preferably 130nm,
Described MoO 3the thickness of layer 30 is 0.5nm～5nm, is preferably 2nm.
Above-mentioned conductive film 100 passes through at TiO 2-xf xthe surface deposition MoO of layer 10 3the double-deck conductive film of layer 30 preparation, can keep TiO 2-xf xlayer 10 good conductivity, makes again the work function of conductive film 100 obtain significant raising, and conductive film 100 is at 300～900nm wavelength region visible light transmissivity 88%～91%, square resistance scope 10～33 Ω/, surface work function 5.2～5.9eV.
The preparation method of above-mentioned conductive film 100, comprises the following steps:
S110, by TiO 2-xf xtarget and MoO 3target and substrate pack the vacuum cavity of magnetic-controlled sputtering coating equipment into, and wherein, the vacuum tightness of vacuum cavity is 1.0 × 10 -3pa～1.0 × 10 -5pa.
In present embodiment, the TiO of institute 2-xf xtarget is obtained by following steps: by TiO 2and TiF 4powder mixes, wherein, and described TiF 4the molecular fraction that accounts for mixed powder is 2.6%～17.6%, and the powder mixing sintering at 900 DEG C～1300 DEG C is made to target.
Substrate is glass substrate.Preferably, substrate is used acetone, dehydrated alcohol and deionized water ultrasonic cleaning before use.
In present embodiment, the vacuum tightness of vacuum cavity is preferably 5 × 10 -4pa.
Step S120, at substrate surface sputter TiO 2-xf xlayer 10, sputter TiO 2-xf xthe processing parameter of layer 10 is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C.
Preferably, base target spacing is 60mm, and the energy of laser is 150W, and pressure is 10Pa, and rare gas element is argon gas, and the flow of rare gas element is 20sccm, and underlayer temperature is 500 DEG C.
The TiO forming 2-xf xthe thickness of layer 10 is 30nm～550nm, is preferably 130nm.
Step S130, at TiO 2-xf xlayer 10 surperficial sputter MoO 3layer 30, magnetron sputtering MoO 3the processing parameter of layer 30 is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C;
Form MoO 3the thickness of layer 30 is 0.5nm～5nm, is preferably 2nm.
At the bottom of step S140, peeling liner, obtain conductive film 100.
The preparation method of above-mentioned conductive film, adopt laser ablation target, make the ablated one-tenth atom of material in target or the particle of ionic group, in the process that particle deposits in substrate, by passing into a large amount of rare gas elementes, make particle passivation, on substrate, disperse nucleation, then at each nucleation site vertical-growth, the pillared nano wire of shape.Can be by regulating the size of rare gas element pressure to control thickness and the distance between centers of tracks of nano wire.Pass into rare gas element pressure large, the nano wire obtaining is thinner, and distance between centers of tracks is larger.
Refer to Fig. 2, the substrate 200 of the organic electroluminescence device of an embodiment, comprises stacked substrate 201, TiO 2-xf xlayer 202 and MoO 3layer 203.
Substrate 201 is glass substrate.The thickness of substrate 201 is 0.1mm～3.0mm, is preferably 1mm.
TiO 2-xf xlayer 202 and MoO 3layer 203 is conductive films of nano thread structure, and described nanowire diameter is 70nm～600nm.
TiO 2-xf xthe thickness of layer 202 is 30nm～550nm, is preferably 130nm.
MoO 3the thickness of layer 203 is 0.5nm～5nm, is preferably 2nm.
The substrate 200 of above-mentioned organic electroluminescence device is passed through at TiO 2-xf xthe surface deposition MoO of layer 202 3layer 203 is prepared multilayer conductive film, can keep TiO 2-xf xthe good conductivity of layer 202, make again the work function of the substrate 200 of organic electroluminescence device obtain significant raising, the substrate 200 of organic electroluminescence device is at 300～900nm wavelength region visible light transmissivity 88%～91%, square resistance scope 10～33 Ω/, surface work function 5.2～5.9eV.
The preparation method of the substrate 200 of above-mentioned organic electroluminescence device, comprises the following steps:
S210, by TiO 2-xf xtarget and MoO 3target and substrate 201 pack the vacuum cavity of magnetic-controlled sputtering coating equipment into, and wherein, the vacuum tightness of vacuum cavity is 1.0 × 10 -3pa～1.0 × 10 -5pa.
In present embodiment, the TiO of institute 2-xf xtarget is obtained by following steps: by TiO 2and TiF 4powder mixes, wherein, and described TiF 4the molecular fraction that accounts for mixed powder is 2.6%～17.6%, and the powder mixing sintering at 900 DEG C～1300 DEG C is made to target.
Substrate is glass substrate.Preferably, substrate is used acetone, dehydrated alcohol and deionized water ultrasonic cleaning before use.
In present embodiment, the vacuum tightness of vacuum cavity is preferably 5 × 10 -4pa.
Step S220, at substrate surface sputter TiO 2-xf xlayer 202, sputter TiO 2-xf xthe processing parameter of layer 202 is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C.
Preferably, base target spacing is 60mm, and the energy of laser is 150W, and pressure is 10Pa, and rare gas element is argon gas, and the flow of rare gas element is 20sccm, and underlayer temperature is 500 DEG C.
The TiO forming 2-xf xthe thickness of layer 202 is 30nm～550nm, is preferably 130nm.
Step S203, at TiO 2-xf xlayer 202 surperficial sputter MoO 3the processing parameter of layer 203 is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C.
The MoO forming 3the thickness of layer 203 is 0.5nm～5nm, is preferably 2nm.
The preparation method of the substrate 200 of above-mentioned organic electroluminescence device, adopt laser ablation target, make the ablated one-tenth atom of material in target or the particle of ionic group, in the process that particle deposits in substrate, by passing into a large amount of rare gas elementes, make particle passivation, on substrate, disperse nucleation, then at each nucleation site vertical-growth, the pillared nano wire of shape.Can be by regulating the size of rare gas element pressure to control thickness and the distance between centers of tracks of nano wire.Pass into rare gas element pressure large, the nano wire obtaining is thinner, and distance between centers of tracks is larger, on substrate 201, prepares TiO 2-xf xlayer 202 and MoO 3layer 203, technique is comparatively simple.
Refer to Fig. 3, the organic electroluminescence device 300 of an embodiment comprises the substrate 301, anode 302, luminescent layer 303 and the negative electrode 304 that stack gradually.Anode 302 is made up of conductive film 100, comprises stacked TiO 2-xf xlayer 10 and MoO 3layer 30.Substrate 301 is glass substrate, is appreciated that, according to the difference of organic electroluminescence device 300 concrete structures, substrate 301 can omit.The material of luminescent layer 303 is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl-Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylidene anthracene (AND), two (2-methyl-oxine)-(4-xenol) aluminium (BALQ), 4-(dintrile methene)-2-sec.-propyl-6-(1,1,7,7-tetramethyl-Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTI), dimethylquinacridone (DMQA), oxine aluminium (Alq3), two (4,6-difluorophenyl pyridine-N, C 2) pyridine formyl closes iridium (FIrpic), two (2-methyl-phenylbenzene [f, h] quinoxaline) (methyl ethyl diketone) and close iridium (Ir (MDQ) 2(acac)) or three (2-phenylpyridines) close iridium (Ir (ppy) 3).The material of negative electrode 304 is silver (Ag), gold (Au), aluminium (Al), platinum (Pt) or magnesium silver alloys.
Described TiO 2-xf xthe thickness of layer 10 is 30nm～550nm, is preferably 130nm,
Described MoO 3the thickness of layer 30 is 0.5nm～5nm, is preferably 2nm.
Be appreciated that above-mentioned organic electroluminescence device 300 also can arrange other functional layers according to user demand.
Above-mentioned organic electroluminescence device 300, use the anode of conductive film 100 as organic electroluminescence device, surface work function 5.2～the 5.9eV of conductive film, and between the HOMO energy level (being typically 5.7～6.3eV) of general organic luminous layer, gap is less, reduce the injection barrier of current carrier, can improve luminous efficiency.
Be specific embodiment below.
Embodiment 1
Selecting purity is 99.9% powder, by TiO 2and TiF 4powder mixes through even, wherein, and TiF 4the molecular fraction that accounts for mixed powder is 12.5%, and at 1250 DEG C, sintering diameter into is 50mm, the TiO that thickness is 2mm 1.6f 0.4ceramic target, then by MoO 3target packs in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump -4pa, the working gas flow of argon gas is 20sccm, and pressure is adjusted to 10Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W.Successively sputtered with Ti O 1.6f 0.4target and MoO 3target, deposits respectively the film of 130nm and 2nm film, obtains TiO 1.6f 0.4-MoO 3double-deck transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 10 Ω/, surface work function tester records surface work function 5.8eV.
Refer to Fig. 4, Figure 4 shows that the transmitted spectrum of the transparent conductive film obtaining, use ultraviolet-visible pectrophotometer test, test wavelength is 300～900nm.Film has reached 90% at visible ray 470～790nm wavelength region average transmittances as seen from Figure 4.
Refer to Fig. 5, Fig. 5 is the electron-microscope scanning figure of the conductive film prepared of embodiment 1, and as can be seen from Figure 5 the diameter of nano wire is taking 70nm～600nm as main.
Select TiO 1.6f 0.4-MoO 3double-deck transparent conductive film is as the anode of organic semiconductor device, evaporation luminescent layer Alq in the above 3, and negative electrode employing Ag, prepare organic electroluminescence device.
Refer to Fig. 6, Fig. 6 is voltage and electric current and the brightness relationship figure of the organic electroluminescence device prepared of above-mentioned device embodiment, in accompanying drawing 6, curve 1 is voltage and current density relation curve, can find out that device starts from 6.0V luminous, curve 2 is voltage and brightness relationship curve, and high-high brightness is 71cd/m 2, show that device has the good characteristics of luminescence.
Embodiment 2
Selecting purity is 99.9% powder, by TiO 2and TiF 4powder mixes through even, wherein, and TiF 4the molecular fraction that accounts for mixed powder is 2.6%, and at 1350 DEG C, sintering diameter into is 50mm, the TiO that thickness is 2mm 1.9f 0.1ceramic target, then by MoO 3target packs in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -5pa, the working gas flow of argon gas is 10sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 250 DEG C, and laser energy is 300W.Successively sputtered with Ti O 1.9f 0.1target and MoO 3target, deposits respectively the film of 30nm and 5nm film, obtains TiO 1.9f 0.1-MoO 3the transparent conductive film of multilayer.
Test result: adopt four point probe resistance meter to record square resistance 15 Ω/, surface work function tester records surface work function 5.2eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 88% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 3
Selecting purity is 99.9% powder, by TiO 2and TiF 4powder mixes through even, wherein, and TiF 4the molecular fraction that accounts for mixed powder is 17.6%, and at 1250 DEG C, sintering diameter into is 50mm, the TiO that thickness is 2mm 1.4f 0.6ceramic target, then by MoO 3target packs in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -3pa, the working gas flow of argon gas is 40sccm, and pressure is adjusted to 30Pa, and underlayer temperature is 750 DEG C, and laser energy is 80W.Successively sputtered with Ti O 1.6f 0.6target and MoO 3target, deposits respectively the film of 120nm and 4.5nm film, obtains TiO 1.6f 0.6-MoO 3the transparent conductive film of multilayer.
Test result: adopt four point probe resistance meter to record square resistance 33 Ω/, surface work function tester records surface work function 5.9eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 91% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 4
Selecting purity is 99.9% powder, by TiO 2and TiF 4powder mixes through even, wherein, and TiF 4the molecular fraction that accounts for mixed powder is 8.8%, and at 1250 DEG C, sintering diameter into is 50mm, the TiO that thickness is 2mm 1.7f 0.3ceramic target, then by MoO 3target packs in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 3.0 × 10 with mechanical pump and molecular pump -4pa, the working gas flow of argon gas is 30sccm, and pressure is adjusted to 22Pa, and underlayer temperature is 400 DEG C, and laser energy is 100W.Successively sputter ZITO target and Pr 2o 3target, deposits respectively the film of 330nm and 3nm film, obtains ZITO-Pr 2o 3the transparent conductive film of multilayer.
Test result: adopt four point probe resistance meter to record square resistance 18 Ω/, surface work function tester records surface work function 5.7eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 90% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 5
Selecting purity is 99.9% powder, by TiO 2and TiF 4powder mixes through even, wherein, and TiF 4the molecular fraction that accounts for mixed powder is 5.5%, and at 1250 DEG C, sintering diameter into is 50mm, the TiO that thickness is 2mm 1.8f 0.2ceramic target, then by MoO 3target packs in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 80mm.The vacuum tightness of cavity is extracted into 7.0 × 10 with mechanical pump and molecular pump -4pa, the working gas flow of argon gas is 20sccm, and pressure is adjusted to 13Pa, and underlayer temperature is 650 DEG C, and laser energy is 280W.Successively sputter ZITO target and Pr 2o 3target, deposits respectively the film of 180nm and 3.5nm film, obtains ZITO-Pr 2o 3the transparent conductive film of multilayer.
Test result: adopt four point probe resistance meter to record square resistance 22 Ω/, surface work function tester records surface work function 5.4eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 90% at visible ray 470～790nm wavelength region average transmittances.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.

Claims (10)

1. a conductive film, is characterized in that, comprises stacked TiO 2-xf xlayer and MoO 3layer, wherein, x is 0.1～0.6.
2. conductive film according to claim 1, is characterized in that, described conductive film is the conductive film of nano thread structure, and described nanowire diameter is 70nm～600nm.
3. conductive film according to claim 1, is characterized in that, described TiO 2-xf xthe thickness of layer is 30nm～550nm, described MoO 3the thickness of layer is 0.5nm～5nm.
4. a preparation method for conductive film, is characterized in that, comprises the following steps:
By TiO 2-xf xtarget and MoO 3target and substrate pack the vacuum cavity of magnetic-controlled sputtering coating equipment into, and wherein, the vacuum tightness of vacuum cavity is 1.0 × 10 -3pa～1.0 × 10 -5pa, wherein, x is 0.1～0.6;
At described substrate surface sputter TiO 2-xf xlayer, TiO described in sputter 2-xf xthe processing parameter of layer is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C;
At described TiO 2-xf xthe surperficial sputter MoO of layer 3layer, MoO described in sputter 3the processing parameter of layer is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C; And
Peel off described substrate, obtain described conductive film.
5. the preparation method of conductive film according to claim 4, is characterized in that, described TiO 2-xf xtarget is obtained by following steps: by TiO 2and TiF 4powder mixes, wherein, and described TiF 4the molecular fraction that accounts for mixed powder is 2.6%～17.6%, and the powder mixing sintering at 900 DEG C～1300 DEG C is made to target.
6. a substrate for organic electroluminescence device, is characterized in that, comprises the substrate, the TiO that stack gradually 2-xf xlayer and MoO 3layer, wherein, x is 0.1～0.6.
7. the substrate of organic electroluminescence device according to claim 6, is characterized in that, the conductive film in described substrate is the conductive film of nano thread structure, and described nanowire diameter is 70nm～600nm.
8. a preparation method for the substrate of organic electroluminescence device, is characterized in that, comprises the following steps:
By TiO 2-xf xtarget and MoO 3target and substrate pack the vacuum cavity of magnetic-controlled sputtering coating equipment into, and wherein, the vacuum tightness of vacuum cavity is 1.0 × 10 -3pa～1.0 × 10 -5pa, wherein, x is 0.1～0.6;
At described substrate surface sputter TiO 2-xf xlayer, TiO described in sputter 2-xf xthe processing parameter of layer is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C;
At described TiO 2-xf xthe surperficial sputter MoO of layer 3layer, MoO described in sputter 3the processing parameter of layer is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C.
9. the preparation method of the substrate of organic electroluminescence device according to claim 8, is characterized in that, the TiO of institute 2-xf xtarget is obtained by following steps: by TiO 2and TiF 4powder mixes, wherein, and described TiF 4the molecular fraction that accounts for mixed powder is 2.6%～17.6%, and the powder mixing sintering at 900 DEG C～1300 DEG C is made to target.
10. an organic electroluminescence device, comprises the anode, luminescent layer and the negative electrode that stack gradually, it is characterized in that, described anode comprises stacked TiO 2-xf xlayer and MoO 3layer, wherein, x is 0.1～0.6.
CN201310192124.XA 2013-05-22 2013-05-22 Conductive film and preparation method and application thereof Pending CN104178727A (en)

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Application publication date: 20141203