CN104178154A - Samarium-doped fluorine beryllium phosphate light-emitting film and preparation method thereof and electroluminescent device - Google Patents

Samarium-doped fluorine beryllium phosphate light-emitting film and preparation method thereof and electroluminescent device Download PDF

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Publication number
CN104178154A
CN104178154A CN201310196684.2A CN201310196684A CN104178154A CN 104178154 A CN104178154 A CN 104178154A CN 201310196684 A CN201310196684 A CN 201310196684A CN 104178154 A CN104178154 A CN 104178154A
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light
emitting film
phosphatic
preparation
film
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周明杰
陈吉星
王平
张娟娟
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Abstract

The invention belongs to the field of photoelectric materials, and discloses a samarium-doped fluorine beryllium phosphate light-emitting film and a preparation method thereof and an electroluminescent device; the light-emitting film has a chemical formula of BeMe4(PO4)3F:xSm<3 +>; wherein BeMe4(PO4)3F is a matrix, Sm<3 +> is activated light ions, and is light-emitting centers of the light-emitting film, Me is selected from the group consisting of Mg, Ca, Sr or Ba element, and the value range of x is 0.01-0.05. In the electroluminescence spectrum (EL) of the samarium-doped fluorine beryllium phosphate light-emitting film, strong light-emitting peaks show at 620 nm and 727nm positions.

Description

Phosphatic light-emitting film of samarium doped with fluorine beryllium and preparation method thereof and electroluminescent device
Technical field
The present invention relates to field of photovoltaic materials, relate in particular to phosphatic light-emitting film of a kind of samarium doped with fluorine beryllium and preparation method thereof.The invention still further relates to a kind of electroluminescent device of this light-emitting film as luminescent layer that use.
Background technology
Thin-film electroluminescent displays (TFELD), due to its active illuminating, total solids, the advantage such as shock-resistant, reaction is fast, visual angle is large, Applicable temperature is wide, operation is simple, has caused and paid close attention to widely, and development rapidly.At present, research colour and extremely panchromatic TFELD, the luminous material of exploitation multiband, is the developing direction of this problem.
In the research of LED fluorescent material, rear-earth-doped fluorine beryllium phosphate phosphor, its excitation spectrum can mate the emmission spectrum of existing near ultraviolet LED preferably, can obtain good green glow exciting to blue light.But, be prepared into electroluminescent film with fluorine beryllium phosphoric acid salt luminescent material, have not yet to see report.
Summary of the invention
The phosphatic light-emitting film of samarium doped with fluorine beryllium of the emmission spectrum that provides a kind of excitation spectrum can mate preferably existing near ultraviolet LED is provided problem to be solved by this invention.
Technical scheme of the present invention is as follows:
The phosphatic light-emitting film of samarium doped with fluorine beryllium provided by the invention, its chemical general formula is: BeMe 4(PO 4) 3f:xSm 3+; Wherein, BeMe 4(PO 4) 3f is matrix, Sm 3+be exciting light ion, serve as main luminescence center in film, Me is Mg, Ca, and Sr or Ba element, the value of x is 0.01～0.05, preferably 0.02.
The present invention also provides the preparation method of the phosphatic light-emitting film of above-mentioned samarium doped with fluorine beryllium, and it utilizes pulsed laser deposition (PLD) to prepare, and processing step is as follows:
(1), the preparation of ceramic target: selecting respectively purity is 99.99% MeO, BeF 2, P 2o 5and Sm 2o 3powder, after evenly mixing, sintering at 900～1300 DEG C, makes ceramic target, wherein, MeO, BeF 2, P 2o 5and Sm 2o 3mol ratio be 8:2:3:x;
Preferably, ceramic target is cut, its specification is Φ 50 × 2mm; Preferably 1250 DEG C of sintering temperatures.
(2), the ceramic target making and ito glass substrate are packed in the cavity of filming equipment, after enclosed housing, cavity is vacuumized to processing, controlling cavity vacuum tightness is 1.0 × 10 -3pa～1.0 × 10 -5pa;
Preferably, ito glass substrate needs clean putting into before cavity: successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, and then put into vacuum cavity;
Vacuumizing to process adopts mechanical pump and molecular pump that cavity is carried out; Chamber vacuum degree is 5.0 × 10 -4pa.
(3), coating process parameter is set: it is 45～95mm that base target spacing is set, and underlayer temperature is 250 DEG C～750 DEG C, and the energy of plated film laser is 80～300W, passes into the oxygen that flow is 10～40sccm in process, and operating pressure is 0.5～5Pa; After processing parameter setting completes, carry out coating film treatment; Make subsequently the phosphatic light-emitting film of samarium doped with fluorine beryllium on the ITO of ito glass substrate layer surface, its chemical general formula of this light-emitting film is: BeMe 4(PO 4) 3f:xSm 3+; Wherein, BeMe 4(PO 4) 3f is matrix, Sm 3+being exciting light ion, is the luminescence center of light-emitting film, and Me is selected from Mg, Ca, and Sr or Ba element, the span of x is 0.01～0.05;
Preferably, coating process parameter is: base target spacing is 60mm, and underlayer temperature is 500 DEG C, and the energy of plated film laser is 150W, passes into the oxygen that flow is 20sccm in process, and operating pressure is 3Pa; And the value of x is 0.02.
The present invention also provides a kind of electroluminescent device, comprises glass substrate, ito anode, light-emitting film layer and cathode layer, it is characterized in that, described light-emitting film is the phosphatic light-emitting film of samarium doped with fluorine beryllium, and its chemical general formula is: BeMe 4(PO 4) 3f:xSm 3+; Wherein, BeMe 4(PO 4) 3f is matrix, Sm 3+being exciting light ion, is the luminescence center of light-emitting film, and Me is selected from Mg, Ca, and Sr or Ba element, the span of x is 0.01～0.05.
The preparation technology of electroluminescent device is as follows:
(1), the preparation of ceramic target: selecting respectively purity is 99.99% MeO, BeF 2, P 2o 5and Sm 2o 3powder, after evenly mixing, sintering at 900～1300 DEG C, makes ceramic target, wherein, MeO, BeF 2, P 2o 5and Sm 2o 3mol ratio be 8:2:3:x;
(2), the ceramic target making and ito glass substrate are packed in the cavity of filming equipment, after enclosed housing, cavity is vacuumized to processing, controlling cavity vacuum tightness is 1.0 × 10 -3pa～1.0 × 10 -5pa;
(3), coating process parameter is set: it is 45～95mm that base target spacing is set, and underlayer temperature is 250 DEG C～750 DEG C, and the energy of plated film laser is 80～300W, passes into the oxygen that flow is 10～40sccm in process, and operating pressure is 0.5～5Pa; After processing parameter setting completes, carry out coating film treatment; Make subsequently the phosphatic light-emitting film of samarium doped with fluorine beryllium on the ITO of ito glass substrate layer surface, its chemical general formula of this light-emitting film is: BeMe 4(PO 4) 3f:xSm 3+; Wherein, BeMe 4(PO 4) 3f is matrix, Sm 3+being exciting light ion, is the luminescence center of light-emitting film, and Me is selected from Mg, Ca, and Sr or Ba element, the span of x is 0.01～0.05;
(4), step (3) makes containing the ito glass substrate of light-emitting film and Ag nanoparticle and moves in vacuum evaporation equipment, plays the Ag layer of cathodic process at light-emitting film surface evaporation one deck;
After above-mentioned steps completes, make electroluminescent device.
The present invention adopts PLD equipment, prepares samarium doped with fluorine beryllium phosphoric acid salt BeMe 4(PO 4) 3f:xSm 3+light-emitting film, obtains, in the electroluminescence spectrum (EL) of film, having very strong glow peak at 638nm and 727nm position.
Brief description of the drawings
Fig. 1 is the EL spectrogram of the light-emitting film sample that makes of embodiment 7;
Fig. 2 is the EL device structure schematic diagram that embodiment 12 makes.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Embodiment 1
Select MgO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.02, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 1250 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump -4pa, the working gas flow of oxygen is 20sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W, obtains sample BeMg 4(PO 4) 3f:0.02Sm 3+light-emitting film.
Embodiment 2
Select MgO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.01, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 900 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -3pa, the working gas flow of oxygen is 10sccm, and pressure is adjusted to 0.5Pa, and underlayer temperature is 250 DEG C, and laser energy is 80W, obtains sample BeMg 4(PO 4) 3f:0.01Sm 3+light-emitting film.
Embodiment 3
Select MgO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.05, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 1300 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -5pa, the working gas flow of oxygen is 40sccm, and pressure is adjusted to 5Pa, and underlayer temperature is 750 DEG C, and laser energy is 300W, obtains sample BeMg 4(PO 4) 3f:0.05Sm 3+.
Embodiment 4
Select CaO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.02, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 1250 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump -4pa, the working gas flow of oxygen is 20sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W, obtains sample BeCa 4(PO 4) 3f:0.02Sm 3+light-emitting film.
Embodiment 5
Select CaO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.01, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 900 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -3pa, the working gas flow of oxygen is 10sccm, and pressure is adjusted to 0.5Pa, and underlayer temperature is 250 DEG C, and laser energy is 80W, obtains sample BeCa 4(PO 4) 3f:0.01Sm 3+light-emitting film.
Embodiment 6
Select CaO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.05, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 1300 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -5pa, the working gas flow of oxygen is 40sccm, and pressure is adjusted to 5Pa, and underlayer temperature is 750 DEG C, and laser energy is 300W, obtains sample BeCa 4(PO 4) 3f:0.05Sm 3+light-emitting film.
Embodiment 7
Select SrO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.02, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 1250 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump -4pa, the working gas flow of oxygen is 20sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W, obtains sample BeSr 4(PO 4) 3f:0.02Sm 3+light-emitting film.
Fig. 1 is the EL spectrogram of the light-emitting film sample that makes of embodiment 7; As can be seen from Figure 1, there is very strong glow peak at 638nm and 727nm position.
Embodiment 8
Select SrO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.01, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 900 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -3pa, the working gas flow of oxygen is 10sccm, and pressure is adjusted to 0.5Pa, and underlayer temperature is 250 DEG C, and laser energy is 80W, obtains sample BeSr 4(PO 4) 3f:0.01Sm 3+light-emitting film.
Embodiment 9
Select SrO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.05, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 1300 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -5pa, the working gas flow of oxygen is 40sccm, and pressure is adjusted to 5Pa, and underlayer temperature is 750 DEG C, and laser energy is 300W, obtains sample BeSr 4(PO 4) 3f:0.05Sm 3+light-emitting film.
Embodiment 10
Select BaO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.02, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 1250 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump -4pa, the working gas flow of oxygen is 20sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W, obtains sample BeBa 4(PO 4) 3f:0.02Sm 3+light-emitting film.
Embodiment 11
Select BaO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.01, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 900 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -3pa, the working gas flow of oxygen is 10sccm, and pressure is adjusted to 0.5Pa, and underlayer temperature is 250 DEG C, and laser energy is 80W, obtains sample BeBa 4(PO 4) 3f:0.01Sm 3+light-emitting film.
Embodiment 12
Originally be embodied as electroluminescent device, as shown in Figure 2, wherein, 1 is glass substrate; 2 is ITO transparent conductive film, as anode; 3 is luminescent material thin-film layer; 4 is Ag layer, as negative electrode.
Select BaO, BeF 2, P 2o 5and Sm 2o 3powder, its mol ratio is 8:2:3:0.05, after even mixing, sinters the ceramic target of Φ 50 × 2mm at 1300 DEG C into, and target is packed in vacuum cavity.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and use it is carried out to oxygen plasma treatment, put into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump -5pa, the working gas flow of oxygen is 40sccm, and pressure is adjusted to 5Pa, and underlayer temperature is 750 DEG C, and laser energy is 300W, obtains sample BeBa 4(PO 4) 3f:0.05Sm 3+light-emitting film.Then light-emitting film is moved in vacuum evaporation equipment, evaporation one deck Ag on light-emitting film, as negative electrode.
Should be understood that, the above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.

Claims (10)

1. the phosphatic light-emitting film of samarium doped with fluorine beryllium, is characterized in that, its chemical general formula is: BeMe 4(PO 4) 3f:xSm 3+; Wherein, BeMe 4(PO 4) 3f is matrix, Sm 3+being exciting light ion, is the luminescence center of light-emitting film, and Me is selected from Mg, Ca, and Sr or Ba element, the span of x is 0.01～0.05.
2. the phosphatic light-emitting film of samarium doped with fluorine beryllium according to claim 1, is characterized in that, the value of x is 0.02.
3. the phosphatic light-emitting film of samarium doped with fluorine beryllium according to claim 1, is characterized in that, comprises the light-emitting film of following chemical formula:
BeMg 4(PO 4) 3F:0.01Sm 3+；BeMg 4(PO 4) 3F:0.02Sm 3+；BeMg 4(PO 4) 3F:0.05Sm 3+；BeCa 4(PO 4) 3F:0.02Sm 3+；BeCa 4(PO 4) 3F:0.01Sm 3+；BeCa 4(PO 4) 3F:0.05Sm 3+；BeCa 4(PO 4) 3F:0.05Sm 3+；BeSr 4(PO 4) 3F:0.02Sm 3+；BeSr 4(PO 4) 3F:0.01Sm 3+；BeSr 4(PO 4) 3F:0.05Sm 3+；BeBa 4(PO 4) 3F:0.01Sm 3+；BeBa 4(PO 4) 3F:0.05Sm 3+。
4. a preparation method for the phosphatic light-emitting film of samarium doped with fluorine beryllium, is characterized in that, comprises the steps:
The preparation of ceramic target: selecting respectively purity is 99.99% MeO, BeF 2, P 2o 5and Sm 2o 3powder, after evenly mixing, sintering at 900～1300 DEG C, makes ceramic target, wherein, MeO, BeF 2, P 2o 5and Sm 2o 3mol ratio be 8:2:3:x;
The ceramic target making and ito glass substrate are packed in the cavity of filming equipment, after enclosed housing, cavity is vacuumized to processing, controlling cavity vacuum tightness is 1.0 × 10 -3pa～1.0 × 10 -5pa;
Coating process parameter is set: it is 45～95mm that base target spacing is set, and underlayer temperature is 250 DEG C～750 DEG C, and the energy of plated film laser is 80～300W, passes into the oxygen that flow is 10～40sccm in process, and operating pressure is 0.5～5Pa; After processing parameter setting completes, carry out coating film treatment; Make subsequently the phosphatic light-emitting film of samarium doped with fluorine beryllium on the ITO of ito glass substrate layer surface, its chemical general formula of this light-emitting film is: BeMe 4(PO 4) 3f:xSm 3+; Wherein, BeMe 4(PO 4) 3f is matrix, Sm 3+being exciting light ion, is the luminescence center of light-emitting film, and Me is selected from Mg, Ca, and Sr or Ba element, the span of x is 0.01～0.05.
5. the preparation method of the phosphatic light-emitting film of samarium doped with fluorine beryllium according to claim 4, is characterized in that, the sintering temperature in described ceramic target preparation process is 1250 DEG C.
6. the preparation method of the phosphatic light-emitting film of samarium doped with fluorine beryllium according to claim 4, is characterized in that, described in vacuumize to process and adopt mechanical pump and molecular pump that cavity is carried out.
7. the preparation method of the phosphatic light-emitting film of samarium doped with fluorine beryllium according to claim 4, is characterized in that, described chamber vacuum degree is 5.0 × 10 -4pa.
8. the preparation method of the phosphatic light-emitting film of samarium doped with fluorine beryllium according to claim 4, it is characterized in that, described coating process parameter is: base target spacing is 60mm, underlayer temperature is 500 DEG C, the energy of plated film laser is 150W, in process, pass into the oxygen that flow is 20sccm, operating pressure is 3Pa.
9. the preparation method of the phosphatic light-emitting film of samarium doped with fluorine beryllium according to claim 4, is characterized in that, the value of x is 0.02.
10. an electroluminescent device, comprises glass substrate, ito anode, light-emitting film layer and Ag cathode layer, it is characterized in that, described light-emitting film is the phosphatic light-emitting film of samarium doped with fluorine beryllium, and its chemical general formula is: BeMe 4(PO 4) 3f:xSm 3+; Wherein, BeMe 4(PO 4) 3f is matrix, Sm 3+being exciting light ion, is the luminescence center of light-emitting film, and Me is selected from Mg, Ca, and Sr or Ba element, the span of x is 0.01～0.05.
CN201310196684.2A 2013-05-23 2013-05-23 Samarium-doped fluorine beryllium phosphate light-emitting film and preparation method thereof and electroluminescent device Pending CN104178154A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446049A (en) * 1982-10-21 1984-05-01 Gte Laboratories Incorporated Yellow-emitting halophosphate phosphor of improved brightness and method
CN102127434A (en) * 2011-01-21 2011-07-20 中国科学院西安光学精密机械研究所 Preparation method of rare earth doped strontium fluorophosphate nanoparticles
CN102911666A (en) * 2011-08-05 2013-02-06 海洋王照明科技股份有限公司 Cerium-tin-codoped strontium chlorophosphate light-emitting film and preparation method thereof, and organic electroluminescent device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446049A (en) * 1982-10-21 1984-05-01 Gte Laboratories Incorporated Yellow-emitting halophosphate phosphor of improved brightness and method
CN102127434A (en) * 2011-01-21 2011-07-20 中国科学院西安光学精密机械研究所 Preparation method of rare earth doped strontium fluorophosphate nanoparticles
CN102911666A (en) * 2011-08-05 2013-02-06 海洋王照明科技股份有限公司 Cerium-tin-codoped strontium chlorophosphate light-emitting film and preparation method thereof, and organic electroluminescent device

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Title
逄茂林等: "发光薄膜的制备及应用", 《液晶与显示》 *

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Application publication date: 20141203