CN104167461A - Manufacturing method of solar energy cell - Google Patents
Manufacturing method of solar energy cell Download PDFInfo
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- CN104167461A CN104167461A CN201310183555.XA CN201310183555A CN104167461A CN 104167461 A CN104167461 A CN 104167461A CN 201310183555 A CN201310183555 A CN 201310183555A CN 104167461 A CN104167461 A CN 104167461A
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- solar cell
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 abstract description 5
- 230000003667 anti-reflective effect Effects 0.000 abstract 2
- 238000007650 screen-printing Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000003292 glue Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003042 antagnostic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011536 re-plating Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a manufacturing method of a solar energy cell. The manufacturing method includes the steps: providing a semiconductor substrate which is provided with a light receiving surface provided with an anti-reflective layer and a shady surface; then screen printing a plurality of first electrode patterns on the anti-reflective layer; sintering the first electrode pattern; and then etching part of the first electrode, to reduce width of the first electrode; then electroplating the same materials as the first electrode on the first electrode, to form a front electrode of the solar energy cell.
Description
Technical field
The invention relates to a kind of manufacture method of solar cell, particularly relevant for a kind of manufacture method of front electrode of solar cell.
Background technology
Solar energy be a kind of have never exhaust and the free of contamination energy, when solving pollution that current fossil energy faces and short problem, be the focus attracting most attention always.Wherein, solar cell (solar cell) can directly be converted to electric energy by solar energy, is current considerable research topic.
The typical the most basic structure of solar cell can be divided for the semiconductor substrate being comprised of substrate and P-N diode, and semiconductor substrate has side to light and shady face, side to light has anti-reflecting layer, and the side to light of semiconductor substrate and shady face have respectively front electrode and backplate, for extraneous line.The front electrode of solar cell be designed to one of important technology promoting efficiency of solar cell.
The current conventional front electrode manufacture method of industry, one utilizes solar cell semi-finished product, carries out laser perforate, directly to electroplate on silicon on silicon nitride.Another kind utilizes solar cell finished product, on the elargol of front electrode, directly electroplates, and please refer to Figure 1A to Fig. 1 C, and it is the cross-sectional view illustrating according to the making flow process of known solar cell.As shown in Figure 1A, it is to illustrate semiconductor substrate 110, has a side to light 112 and shady face 114, wherein on side to light 112, has an anti-reflecting layer 120; Then, as shown in Figure 1B, in wire mark mode, elargol is printed in and on anti-reflecting layer, forms the first electrode pattern 130a, and sintering is cured; Then, as shown in Figure 1 C, to electroplate the conductivity of supplementing the first electrode pattern 130a.Yet, this method is in the process of elargol printing and sintering, have part elargol 132 splash electrode outside, as shown in Figure 1B, if first do not remove these, do not spill next elargol 132, during plating, can make to spill the elargol 132 and the first electrode pattern 130a that come links together, as shown in Figure 1 C, and the very large expansion line (front electrode 130b) of formation, the receipts light area of solar cell is reduced, significantly reduce its opto-electronic conversion usefulness, also violated original use and electroplated the object of making the wide electrode of fine rule.
In view of this, the utmost point needs a kind of manufacture method of solar cell at present, and above-mentioned disappearance is forgone, be the technical difficulties place that this case institute wish solves, phase can provide a kind of object of electroplating rear maintenance fine rule, to reduce the solar cell of shading-area, meets the demand of industry.
Summary of the invention
Main purpose of the present invention is to provide a kind of manufacture method of solar cell, and its step comprises provides semiconductor substrate, has a side to light and a shady face, and on side to light, have an anti-reflecting layer on this semiconductor substrate.Then, a plurality of the first electrode patterns of wire mark are on anti-reflecting layer, and sintering the first electrode pattern.Then, be etched to small part the first electrode pattern, to reduce the width of the first electrode pattern, the re-plating material identical with the first electrode pattern is on this first electrode pattern, to form the front electrode of solar cell.
According to one embodiment of the invention, the step that forms the first electrode pattern also comprises formation the second electrode pattern on the shady face of semiconductor substrate, and the second electrode pattern forms the backplate of solar cell after sintering step.
According to one embodiment of the invention, the first electrode pattern comprises a plurality of bus electrodes and a plurality of finger electrode, and after etching step, the width of finger electrode diminishes.
According to another embodiment of the present invention, the material of the first electrode pattern is to be selected from least one group being comprised of titanium, cobalt metal, tungsten metal, platinum, hafnium metal, tantalum metal, molybdenum, chromium metal, palladium metal, metal, silver metal and aluminum metal.
According to further embodiment of this invention, etching step is with a wet etch process, and comprising use one etching solution is NH
4oH/H
2o
2, Ce (NO
3)
2, HNO
3, 3HCl/H
2o
2or KI/I
2.
Accompanying drawing explanation
For above and other object of the present invention, feature, advantage and embodiment can be become apparent, appended the description of the drawings is as follows:
Figure 1A to Fig. 1 C is the cross-sectional view illustrating according to the making flow process of known solar cell;
Fig. 2 is the flow chart illustrating according to the manufacture method of the solar cell of an embodiment of the present invention;
Fig. 3 A to Fig. 3 D is the cross-sectional view illustrating according to the making flow process of the solar cell of an embodiment of the present invention;
Fig. 4 A to Fig. 4 C is the electron microscope picture illustrating according to the finger electrode of the solar cell of an embodiment of the present invention.
Embodiment
In order to make narration of the present invention more detailed and complete, below for embodiments of the present invention and specific embodiment illustrative description has been proposed; But this not implements or uses unique form of the specific embodiment of the invention.In execution mode, contained the feature of a plurality of specific embodiments and method step and its order with these specific embodiments of operation in order to construction.Yet, also can utilize other specific embodiments to reach identical or impartial function and step order.
In the following description, many specific detail will be described in detail so that reader can fully understand following embodiment.Yet, can without these specific detail in the situation that, put into practice embodiments of the invention.In other cases, for simplifying accompanying drawing, the structure of knowing is only schematically illustrated in figure with device.
The manufacture method of solar cell of the present invention, please refer to Fig. 2, and it is the flow chart illustrating according to the manufacture method of the solar cell of an embodiment of the present invention, in order to further to illustrate the technical characterictic of this case; And can be simultaneously with reference to Fig. 3 A to Fig. 3 D, it is to illustrate the cross-sectional view of making flow process according to the solar cell of above-mentioned execution mode.
Step 210 is for providing semiconductor substrate, as shown in Figure 3A, on this semiconductor substrate 310, have one in order to the side to light 312 in the face of external light, and the shady face 314 back to side to light, wherein semiconductor substrate 310 can comprise a P type doped layer and a N-type doped layer, P type doped layer is mutually stacking with N-type doped layer, and semiconductor substrate of the present invention is not limited to monocrystalline silicon wafer crystal (monocrystalline) or polysilicon handle wafer (multicrystalline).
In addition, as shown in Figure 3A, on side to light, there is an anti-reflecting layer 320, can pass through plasma-assisted chemical vapor phase deposition method (Plasma Enhenced Chemical Vapor Deposition; PECVD) form; The material of anti-reflecting layer can nitride (nitride) or oxide (oxide), for example, be silicon nitride.
Step 220 be a plurality of the first electrode pattern 330a of wire mark on anti-reflecting layer 320, as shown in Figure 3 B, this step is to utilize wire mark mode, prints the first electrode pattern to anti-reflecting layer according to a predetermined pattern.The first above-mentioned electrode pattern comprises a plurality of finger electrodes (finger electrode) and a plurality of bus electrode (bus bar electrode), and many finger electrodes that are arranged in parallel and bus electrode staggered.Wherein the fineness of bus electrode is greater than finger electrode, and finger electrode is derived in order to electric current that transform light energy is gone out, and bus electrode is further collected the electric current of being derived by finger electrode remittance abroad to external loading (not illustrating).
In step 220, the material of the first electrode pattern is to be selected from least one group being comprised of titanium, cobalt metal, tungsten metal, platinum, hafnium metal, tantalum metal, molybdenum, chromium metal, palladium metal, metal, silver metal and aluminum metal, yet the present invention is not limited to above-mentioned metal species.In one embodiment, it is to use elargol as the material of the first electrode pattern, following step be take elargol as example illustrates technical characterictic of the present invention.
Step 230 is sintering the first electrode pattern 330a, this step is that above-mentioned uncompleted solar battery panel is carried out to the sintering procedure of a proper temperature by a sintering furnace, sintering temperature is that approximately 400 degree are to 1000 degree, the side to light that makes elargol penetrate anti-reflecting layer and semiconductor substrate produces eutectic structure, forms the alloy of silication silver.
In another embodiment, step 220 also comprises formation one second electrode pattern on the shady face of semiconductor substrate, and this second electrode pattern forms the backplate of solar cell after the sintering step of step 230.The material of the second above-mentioned electrode pattern can be the metals such as aluminium, titanium or copper.Yet, relevant for the correlation technique of the formation of the second electrode pattern, not limited at this.
Step 240 is etching part the first electrode pattern 330a, to reduce the width of the first electrode pattern, and the first electrode pattern 330b as shown in Figure 3 C.This step is in the process due to elargol printing and sintering, have peripheral part that part elargol 332 (material of the first electrode pattern) splashes the first electrode pattern 330a, as shown in Figure 3 B, if do not remove these, do not spill the elargol 332 that comes, form very large expansion line after can causing follow-up plating step.Therefore, before carrying out plating step, the elargol on first antagonistic reflex layer carries out etching, in order to remove the elargol that spills, can reduce the width of finger electrode simultaneously, and the light-receiving area of solar cell is increased.
In step 240, wherein etching step is with a wet etch process, and it comprises use one etching solution is NH
4oH/H
2o
2, Ce (NO
3)
2, HNO
3, 3HCl/H
2o
2or KI/I
2.Yet the kind of etching solution is not limited to this, it is to select suitable etching solution because of the material of the first electrode pattern.In one embodiment, the material of the first electrode pattern is elargol, and etching step is to use HNO
3as etching solution.In another embodiment, etching step is that working concentration is 10% to 30% HNO
3as etching solution, etching period is 30 seconds to 5 minutes.
Step 250 is upper in the first electrode pattern 330b for electroplating the material identical with the first electrode pattern 330b, to form the front electrode 330c of solar cell, as shown in Figure 3 D.Compared to Fig. 1 C, the first electrode pattern that can obviously find out solar cell by Fig. 3 D, through etching, can obtain thinner front electrode 330c, and larger light-receiving area.According to one embodiment of the invention, this front electrode 330c being formed by the first electrode pattern 330b consists of silver metal.
Below enumerate several embodiment with elaboration method of the present invention more, right its use for illustrating only, not in order to limit the present invention, protection scope of the present invention when with accompanying claim the person of being defined be as the criterion.
comparative example 1
First, provide semiconductor substrate, have an anti-reflecting layer on its side to light, its material is silicon nitride.Then, wire mark elargol is in anti-reflecting layer, and in order to as front electrode, it comprises a plurality of bus electrodes and a plurality of finger electrode, and forms backplate on shady face, and wherein the material of backplate is aluminium glue and silver-colored aluminium glue.Then sintered electrode, sintering step is a process heating up stage by stage, in this comparative example, sintering temperature is to be heated up by the stage of 475 ℃, 580 ℃, 585 ℃, 590 ℃, 595 ℃, 675 ℃ to 970 ℃.After sintered electrode, carry out a front value test, the following list one of result.Then, electrosilvering is in front electrode.The basic parameter test result of the solar cell without etching step of comparative example 1 please refer to lower list one.
embodiment 1
First, provide semiconductor substrate, have an anti-reflecting layer on its side to light, its material is silicon nitride.Then, wire mark elargol is in anti-reflecting layer, and in order to as front electrode, it comprises a plurality of bus electrodes and a plurality of finger electrode, and forms backplate on shady face, and wherein the material of backplate is aluminium glue and silver-colored aluminium glue.Then sintered electrode, sintering step is a process heating up stage by stage, in this embodiment, sintering temperature is to be heated up by the stage of 475 ℃, 580 ℃, 585 ℃, 590 ℃, 595 ℃, 675 ℃ to 970 ℃.After sintered electrode, carry out a front value test, front value means the basic parameter test of carrying out before etching, the following list one of front value test result.After sintering step, salpeter solution (HNO3) the etching elargol that the concentration of take is 25%, removes spattering at electrode elargol around, then electroplates front electrode with silver.The basic parameter test result of the solar cell after etching of embodiment 1 please refer to lower list one.
Table one
Through as shown in Table 1, the average live width of the finger electrode before etching is 72.7 μ m (please refer to Fig. 4 A), and the average live width of the finger electrode of comparative example 1 is 81.36 μ m, and its width increases by 8.66 μ m; And the average live width of the finger electrode of embodiment 1 after etching, before electroplating is 50.59 μ m (please refer to Fig. 4 B), after electroplating, the average live width of finger electrode is 62.65 μ m (please refer to Fig. 4 C), and its width reduces by 10.05 μ m before than etching.In addition, the short circuit current of embodiment 1 (Isc) is 8.4978V, than large 0.0641V before etching; And compare with comparative example 1, the short circuit current of embodiment 1 (Isc) also than the short circuit current of comparative example 1 large 0.0152V, show that the usefulness of solar cell of the present invention after etching is better.
In sum, applying advantage of the present invention is after wire mark and sintering elargol, utilizes etching mode to remove and spatters at finger electrode elargol around, and dwindle the width of finger electrode; Therefore, electrode that can be thinner after plating, and increase the light-receiving area of solar cell face simultaneously, to promote the usefulness of solar cell.
Although the present invention discloses as above with execution mode; so it is not in order to limit the present invention; anyly be familiar with this skill person; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, so the scope that protection scope of the present invention ought define depending on appending claims is as the criterion.
Claims (10)
1. a manufacture method for solar cell, is characterized in that, comprises:
(a) provide semiconductor substrate, wherein on this semiconductor substrate, there is a side to light and a shady face, and on this side to light, there is an anti-reflecting layer;
(b) a plurality of the first electrode patterns of wire mark are on this anti-reflecting layer;
(c) those first electrode patterns of sintering;
(d) be etched to those first electrode patterns of small part, to reduce the width of those the first electrode patterns; And
(e) electroplate the material identical with those the first electrode patterns on those first electrode patterns, to form the front electrode of this solar cell.
2. the manufacture method of solar cell according to claim 1, it is characterized in that, step (b) also comprises formation one second electrode pattern on the shady face of this semiconductor substrate, and this second electrode pattern forms the backplate of this solar cell after the sintering step of step (c).
3. the manufacture method of solar cell according to claim 1, is characterized in that, this first electrode pattern comprises a plurality of bus electrodes and a plurality of finger electrode, and after the etching step of step (d), the width of those finger electrodes diminishes.
4. the manufacture method of solar cell according to claim 1, it is characterized in that, the material of this first electrode pattern is to be selected from least one group being comprised of titanium, cobalt metal, tungsten metal, platinum, hafnium metal, tantalum metal, molybdenum, chromium metal, palladium metal, metal, silver metal and aluminum metal.
5. the manufacture method of solar cell according to claim 1, is characterized in that, the material of this first electrode pattern is elargol.
6. the manufacture method of solar cell according to claim 1, is characterized in that, the material of this anti-reflecting layer is silicon nitride.
7. the manufacture method of solar cell according to claim 1, is characterized in that, this etching step is with a wet etch process.
8. the manufacture method of solar cell according to claim 1, is characterized in that, it is NH that this etching step comprises use one etching solution
4oH/H
2o
2, Ce (NO
3)
2, HNO
3, 3HCl/H
2o
2or KI/I
2.
9. the manufacture method of solar cell according to claim 1, is characterized in that, the material of this first electrode pattern is elargol, is to use HNO
3as etching solution.
10. the manufacture method of solar cell according to claim 1, is characterized in that, this etching step is the HNO of working concentration 10% to 30%
3as etching solution, and etching period is 30 seconds to 5 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310183555.XA CN104167461B (en) | 2013-05-17 | 2013-05-17 | The making method of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310183555.XA CN104167461B (en) | 2013-05-17 | 2013-05-17 | The making method of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104167461A true CN104167461A (en) | 2014-11-26 |
| CN104167461B CN104167461B (en) | 2016-06-01 |
Family
ID=51911201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310183555.XA Expired - Fee Related CN104167461B (en) | 2013-05-17 | 2013-05-17 | The making method of solar cell |
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| Country | Link |
|---|---|
| CN (1) | CN104167461B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108123010A (en) * | 2016-11-29 | 2018-06-05 | 茂迪股份有限公司 | Solar cell and method for manufacturing same |
| WO2018120434A1 (en) * | 2016-12-30 | 2018-07-05 | 常州亿晶光电科技有限公司 | Method for etching aluminum film of amorphous silicon solar cell |
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| WO2012000015A1 (en) * | 2010-07-02 | 2012-01-05 | Newsouth Innovations Pty Limited | Metal contact scheme for solar cells |
| EP2587547A1 (en) * | 2011-10-24 | 2013-05-01 | Applied Materials Italia Srl | Methods for the closed-loop feedback control of the printing of a multilayer pattern of a solar cell |
| US20130122641A1 (en) * | 2011-11-10 | 2013-05-16 | National Tsing Hua University | Method of Fabricating Buried Contacts of Solar Cell with Curved Trenches |
-
2013
- 2013-05-17 CN CN201310183555.XA patent/CN104167461B/en not_active Expired - Fee Related
Patent Citations (5)
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|---|---|---|---|---|
| JPS5818974A (en) * | 1981-07-27 | 1983-02-03 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric converting device |
| WO2012000015A1 (en) * | 2010-07-02 | 2012-01-05 | Newsouth Innovations Pty Limited | Metal contact scheme for solar cells |
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| EP2587547A1 (en) * | 2011-10-24 | 2013-05-01 | Applied Materials Italia Srl | Methods for the closed-loop feedback control of the printing of a multilayer pattern of a solar cell |
| US20130122641A1 (en) * | 2011-11-10 | 2013-05-16 | National Tsing Hua University | Method of Fabricating Buried Contacts of Solar Cell with Curved Trenches |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108123010A (en) * | 2016-11-29 | 2018-06-05 | 茂迪股份有限公司 | Solar cell and method for manufacturing same |
| WO2018120434A1 (en) * | 2016-12-30 | 2018-07-05 | 常州亿晶光电科技有限公司 | Method for etching aluminum film of amorphous silicon solar cell |
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