CN104165815B - A kind of method of differentiating silicon steel punched chip performance by measuring microhardness - Google Patents

A kind of method of differentiating silicon steel punched chip performance by measuring microhardness Download PDF

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CN104165815B
CN104165815B CN201410395406.4A CN201410395406A CN104165815B CN 104165815 B CN104165815 B CN 104165815B CN 201410395406 A CN201410395406 A CN 201410395406A CN 104165815 B CN104165815 B CN 104165815B
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punching
hardness
test
stress influence
time
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CN104165815A (en
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石文敏
冯大军
杜光梁
骆忠汉
毛炯辉
陈圣林
吕黎
党宁员
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Wuhan Iron and Steel Co Ltd
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Abstract

A kind of method of differentiating silicon steel punched chip performance by measuring microhardness: obtain test punching; To polishing after metallographic specimen polishing; Carry out HV hardness test with microhardness testers; Draw punching quality discrimination curve map according to the hardness number of each test point; Differentiate: by one of two kinds of methods below, the punching performance of silicon steel sheet is differentiated: in the time of the μ m of width >=1000 in stress influence district, illustrate and have punching quality problems; When the width < in stress influence district is during in 1000 μ m, illustrate without punching quality problems; Or in the time that the stress influence sector width of two punching samples equates, differentiate with the difference of the average hardness in edge and non-stress influence district. The present invention carries has encircleed a kind of micro-HV hardness of passing through to measure, and draws hardness curve, and find out differentiation point according to the HV hardness number of the each point of testing, and carrys out objective, accurately to differentiate cold-reduced silicon sheet punching performance method with this; And use simple, workable.

Description

A kind of method of differentiating silicon steel punched chip performance by measuring microhardness
Technical field
The present invention relates to a kind of detection method of metallicity, belong to particularly a kind of method of differentiating silicon steel punched chip performance by measuring microhardness.
Background technology
Cold rolled silicon steel is mainly as core materials such as motor, transformers. Its processing mode is Punching Technology, and the continuous punching of many employing automatic high speed punch presses at present. But after punching processing, magnetic property (iron loss, magnetic induction intensity) has produced larger decline, and this has brought unfavorable factor to the good magnetic property that makes full use of cold-reduced silicon sheet.
Because the quality of steel band punching performance directly affects punching quality and the loss to mould, therefore more and more high to the punching performance requirement of electric steel plate. it also becomes one of properties of product that user pays close attention to most. Cold rolled silicon steel punching performance is good, can improve the life cycle of punch die, ensures punching size accurately and reduces die-cut burr, finally ensures the performance of finished product motor.
At present, to still ununified standard and method of testing of the punching performance after cold-reduced silicon sheet punching, have plenty of the index using the alternating bending frequency of finished steel plate as indirect examination punching performance, also have according to die wear situation, as judged as the punching number of standard to wear away 0.025mm. The actual punching number of high velocity ram machine that the cold-reduced silicon sheet miniature, micro-machine is used is often reached till 0.05mm height with punching burr judges. The most frequently used is generally by ensureing that under the prerequisite of punching quality, the die-cut number of times according to mould within the adjacent reconditioning cycle is weighed the quality of cold-reduced silicon sheet punching performance.
Also also have from the height of burr and judge punching performance. In actual punching, can produce two kinds of dissimilar burrs, as Fig. 1 and Fig. 2, it is called to outer burr and inner burr. Can adopt miking for outer burr, but inner burr cannot actual measurement. And the actual punching number of high velocity ram machine reaching till 0.05mm height from punching burr judges, or the quality that the die-cut number of times within the adjacent reconditioning cycle is weighed steel band punching from mould often also can be brought increasing error.
At present, punching press meeting brings larger adverse effect to the silicon steel sheet magnetic property of little micromachine iron core, has become industry common recognition, has also caused the attention increasingly of each silicon steel application enterprise, and enterprise is in the urgent need to the guidance of the reliable punching performance evaluation method of science.
For this reason, propose the punching performance evaluation method of little micromachine iron core silicon-steel sheet, the research of punching press method of evaluating performance is met to long term growth and the layout of whole national silicon steel industry.
Everybody it is generally acknowledged, the principal element that affects electrical sheet punching performance has die materials, die-cut gap, lubricating oil, punching shape, coating kind and quality and steel band mechanical property for punching. First few items depends primarily on user's actual service condition, for two of quality and steel band mechanical properties, directly depends on the quality of cold-reduced silicon sheet self. In the situation that punching condition is certain, in same die materials, die-cut gap, for punching under lubricating oil, punching shape, the how more accurately punching performance of objective appraisal cold-reduced silicon sheet, become the problem that each large Electrical Enterprises and silicon steel manufacturing enterprise are concerned about, this also contributes to cold-reduced silicon sheet manufacturing enterprise to improve its product quality, strengthen its product competitiveness, can improve again silicon steel material punching simultaneously, reduce motor product energy consumption, meet national energy-saving and reduce discharging policy, will produce huge social benefit.
According to punching theory, punching process should be divided three phases:
First stage is the bending stage. In this stage, after drift contacts with steel disc, steel disc starts bending, and slides and produce wearing and tearing along rushing tool face. The loss of this stage mould is mainly surface wear, and between the size of wear extent and slippage and mould and steel disc, the size of coefficient of friction is relevant. be that slippage is less, coefficient of friction is less, wear extent also can reduce. And slippage is relevant with the ductility of steel disc, ductility is larger, and slippage is also larger, and the surface wear of mould also can strengthen.
Second stage is the die-cut stage. In this stage, drift incision steel disc. steel disc is subject to serious work hardening. and punch die edge is worn. The degree of wear is relevant with the degree of steel disc work hardening, also proportional with the percentage of drift incision steel disc amount.
Phase III is the fracture stage. When steel disc is not reached critical fracture strength by incision part, rupture, in the wearing and tearing of drift and Die Gap generation limit portion. The wearing and tearing of limit portion are relevant with die clearance.
Huang Liming, Zhao's boundary China waits people to study the impact of Punching-shearing Process on Magnetic Performance of Cold-rolled Silicon Steel Sheets, respectively three kinds of cold-reduced silicon sheet punchings are become to the sample of different in width, after assembled, test, result shows that cold-reduced silicon sheet adds man-hour in punching, the plastic deformation scope that its edge produces is relatively-stationary, that is to say, its edge effect is that punching shear does not produce significant change with the variation of punching width, punching shear will produce in relatively-stationary scope, and stress influence sector width is certain. Therefore the cold-reduced silicon sheet large to punching width, edge effect is relatively little, and the cold-reduced silicon sheet narrow to width, it is large that edge effect is wanted relatively.
Therefore the key index that, judges silicon steel punched chip quality is exactly width and the STRESS VARIATION size of determining stress influence district. In the second stage of punching process, punching shear makes the punching edge of silicon steel sheet produce crystal grain distortion and distortion of lattice, and local generation plastic deformation, causes edge hardness to rise. Therefore the size of punching stress and coverage can be reflected indirectly by the amplification of hardness and fluctuation range.
Summary of the invention
The present invention is directed to the die-cut number of times within the adjacent reconditioning cycle with mould that prior art exists, to weigh cold-reduced silicon sheet punching performance inaccurate or adopt the simple error that burr after cold-reduced silicon sheet punching or ovality evaluation punching bring, the deficiency that can not objectively respond punching performance measured, provide a kind of by measuring micro-HV hardness, draw hardness curve according to the HV hardness number of the each point of testing, and find out differentiation point, carry out objective, accurately to differentiate cold-reduced silicon sheet punching performance method with this.
Realize the measure of above-mentioned purpose:
Differentiate a method for silicon steel punched chip performance by measuring microhardness, its step:
1) obtain test punching: first silicon steel sheet is carried out on mould to punching, then intercept rectangle metallographic specimen from edge to center position at the same position corresponding with mould;
2) said sample is carried out to polishing: by polishing after metallographic specimen polishing, surface of polished roughness Ra < 0.1 μ m;
3) adopt microhardness testers to carry out HV hardness test: test is carried out to middle part successively from the edge with burr, and distributes along mid-depth line; Control load is at 10 ~ 20g, and load and HV hardness are positive correlation, and in afterburner process held stationary; Till being retained to sample testing point plastic deformation not occurring under selected load, after carry out again the test of another test point; The step-length control of test point is 90 ~ 110 μ m; In the time that the tested for hardness value fluctuation range of continuous 5 test points is in ± 10, stop hardness test;
4) draw punching quality discrimination curve map according to the hardness number of each test point, its method:
The ordinate of A, Critical curve figure is HV hardness, abscissa be number of checkpoints and set test point and test point between step-length long-pending, unit is: micron;
The hardness number of B, the each test point of foundation is drawn out hardness curve;
C, draw out the discriminant line parallel with abscissa with the average hardness value that stops five stable test points before tested for hardness, and crossing with the hardness curve of drawing; This joining is called differentiation point; The region of differentiating between point and the origin of coordinates is called stress influence district, uses V1Represent; Differentiate point and be called non-stress influence district along the region of abscissa direction, use V2Represent;
5) differentiate: by one of two kinds of methods below, the punching performance of silicon steel sheet is differentiated:
A, in the time of the μ m of width >=1000 in stress influence district, illustrate and have punching quality problems; When the width < in stress influence district is during in 1000 μ m, illustrate without punching quality problems, the lower explanation punching quality of its value is better; Or
B, two punching samples of employing carry out contrast test: in the time of the μ m of width >=1000 in punching sample stress influence district, illustrate and have punching quality problems; In the time that the width in stress influence district is less than 1000 μ m, illustrate without punching quality problems;
In the time that the stress influence sector width of two punching samples equates, differentiate with the difference of the average hardness in edge and non-stress influence district: in the time of difference >=80 of the hardness number of first test point of edge with burr and the average hardness in non-stress influence district, illustrate and have punching quality problems; When in the time that the difference of the hardness number of first test point of edge with burr and the average hardness in non-stress influence district is less than 80, illustrate without punching quality problems, and difference more the bright punching quality of novel is better.
It is characterized in that: described load becomes positive correlation with HV hardness, refer to that load is chosen in 10 ~ 14g in the time of punching sample HV hardness≤150; In the time that punching sample HV hardness is greater than 150 to 220, load is chosen at 15 ~ 18g; In the time that punching sample HV hardness is greater than 220, load is chosen in 19 ~ 20g.
It is characterized in that: the position deviation along metallographic specimen mid-depth line distribution tests point is controlled at ± 10% in.
The present invention compared with prior art, having overcome with mould the die-cut number of times within the adjacent reconditioning cycle, to weigh cold-reduced silicon sheet punching performance inaccurate, or adopt simple burr or the ovality of measuring after cold-reduced silicon sheet punching to evaluate the error that punching brings, can not objectively respond the deficiency of punching performance, carry and having encircleed by measuring micro-HV hardness, draw hardness curve according to the HV hardness number of the each point of testing, and find out differentiation point, carry out objective, accurately to differentiate cold-reduced silicon sheet punching performance method with this; And use simple, workable.
Brief description of the drawings
Fig. 1 is the outer burr figure of cold-reduced silicon sheet punching;
Fig. 2 is the inner burr figure of cold-reduced silicon sheet punching;
Fig. 3 hardness test point is at phase sample thickness center line distribution schematic diagram;
Fig. 4 is the micro-vickers hardness test curve schematic diagram of the embodiment of the present invention 1;
Fig. 5 is the micro-vickers hardness test curve schematic diagram of the embodiment of the present invention 7;
Fig. 6 is the micro-vickers hardness test curve schematic diagram of the embodiment of the present invention 11;
Illustrate:
Discriminant line in Fig. 4 is that the average hardness value of five stable test points before it stops tested for hardness is 185 to make;
Discriminant line in Fig. 5 is that the average hardness value of five stable test points before it stops tested for hardness is 111 to make;
Discriminant line in Fig. 6 respectively by sample 3 and sample 4 average hardness value of five stable test points before it stops tested for hardness doing for 128 and 108 correspondences;
Fig. 4 to Fig. 6 is only representational.
Detailed description of the invention
Below the present invention is described in detail:
Table 1 is the relevant parameter list of each embodiment punching;
Following embodiment all carries out according to this step:
1) obtain test punching: first silicon steel sheet is carried out on mould to punching, then intercept rectangle metallographic specimen from edge to center position at the same position corresponding with mould;
2) said sample is carried out to polishing: by polishing after metallographic specimen polishing, surface of polished roughness Ra < 0.1 μ m;
3) adopt microhardness testers to carry out HV hardness test: test is carried out to middle part successively from the edge with burr, and distributes along mid-depth line; Control load is at 10 ~ 20g, and load and HV hardness are positive correlation, and in afterburner process held stationary; Till being retained to sample testing point plastic deformation not occurring under selected load, after carry out again the test of another test point; The step-length control of test point is 90 ~ 110 μ m; In the time that the tested for hardness value fluctuation range of continuous 5 test points is in ± 10, stop hardness test;
4) draw punching quality discrimination curve map according to the hardness number of each test point, its method:
The ordinate of A, Critical curve figure is HV hardness, abscissa be number of checkpoints and set test point and test point between step-length long-pending, unit is: micron;
The hardness number of B, the each test point of foundation is drawn out hardness curve;
C, draw out the discriminant line parallel with abscissa with the average hardness value that stops five stable test points before tested for hardness, and crossing with the hardness curve of drawing; This joining is called differentiation point; The region of differentiating between point and the origin of coordinates is called stress influence district, uses V1Represent; Differentiate point and be called non-stress influence district along the region of abscissa direction, use V2Represent;
5) differentiate: by one of two kinds of methods below, the punching performance of silicon steel sheet is differentiated:
A, in the time of the μ m of width >=1000 in stress influence district, illustrate and have punching quality problems; When the width < in stress influence district is during in 1000 μ m, illustrate without punching quality problems, the lower explanation punching quality of its value is better; Or
B, two punching samples of employing carry out contrast test: in the time of the μ m of width >=1000 in punching sample stress influence district, illustrate and have punching quality problems; In the time that the width in stress influence district is less than 1000 μ m, illustrate without punching quality problems;
In the time that the stress influence sector width of two punching samples equates, differentiate with the difference of the average hardness in edge and non-stress influence district: in the time of difference >=80 of the hardness number of first test point of edge with burr and the average hardness in non-stress influence district, illustrate and have punching quality problems; When in the time that the difference of the hardness number of first test point of edge with burr and the average hardness in non-stress influence district is less than 80, illustrate without punching quality problems, and difference more the bright punching quality of novel is better.
In the time of punching sample hardness≤150, load is chosen in 10 ~ 14g; In the time that punching sample hardness is greater than 150 to 220, load is chosen at 15 ~ 18g; In the time that punching sample hardness is greater than 220, load is chosen in 19 ~ 20g.
Table 1 is the relevant parameter of employing method A differentiation silicon steel material punching
Table 2 is the relevant parameter of employing method B differentiation silicon steel material punching
In table 1: hardness all refers to Vickers hardness (HV); The micro-HV hardness V of edge1Represent the average HV hardness V in non-stress influence district2Represent;
Material in table 1 is all non-oriented silicon steel sheets that 0.5mm specification is thick, on same 30mm × 300mm punch die, carry out punching, sample after measurement punching is chosen the same position of corresponding punch die, and punching sample is tested the micro-vickers hardness under different loads under micro Vickers.
As can be seen from Table 1, result and the actual conditions of the present invention's judgement are coincide, and absolutely prove that the present invention can objective, accurately differentiate cold-reduced silicon sheet punching performance completely, and use simple, workable.
Above-described embodiment only exemplifies for the best, and is not the restriction to embodiments of the present invention.

Claims (3)

1. differentiate a method for silicon steel punched chip performance by measuring microhardness, its step:
1) obtain test punching: first silicon steel sheet is carried out on mould to punching, then intercept rectangle metallographic specimen from edge to center position at the same position corresponding with mould;
2) said sample is carried out to polishing: by polishing after metallographic specimen polishing, surface of polished roughness Ra < 0.1 μ m;
3) adopt microhardness testers to carry out HV hardness test: test is carried out to middle part successively from the edge with burr, and distributes along mid-depth line; Control load is at 10 ~ 20g, and load and HV hardness are positive correlation, and in afterburner process held stationary; Till being retained to sample testing point plastic deformation not occurring under selected load, after carry out again the test of another test point; The step-length control of test point is 90 ~ 110 μ m; In the time that the tested for hardness value fluctuation range of continuous 5 test points is in ± 10, stop hardness test;
4) draw punching quality discrimination curve map according to the hardness number of each test point, its method:
The ordinate of A, Critical curve figure is HV hardness, abscissa be number of checkpoints and set test point and test point between step-length long-pending, unit is: micron;
The hardness number of B, the each test point of foundation is drawn out hardness curve;
C, draw out the discriminant line parallel with abscissa with the average hardness value that stops five stable test points before tested for hardness, and crossing with the hardness curve of drawing; Joining is called differentiation point; The region of differentiating between point and the origin of coordinates is called stress influence district, uses V1Represent; Differentiate point and be called non-stress influence district along the region of abscissa direction, use V2Represent;
5) differentiate: by one of two kinds of methods below, the punching performance of silicon steel sheet is differentiated:
A, in the time of the μ m of width >=1000 in stress influence district, illustrate and have punching quality problems; In the time of the width < in stress influence district 1000 μ m, illustrate without punching quality problems, the lower explanation punching quality of its value is better; Or
B, two punching samples of employing carry out contrast test: in the time of the μ m of width >=1000 in punching sample stress influence district, illustrate and have punching quality problems; In the time that the width in stress influence district is less than 1000 μ m, illustrate without punching quality problems;
In the time that the stress influence sector width of two punching samples equates, differentiate with the difference of the average hardness in edge and non-stress influence district: in the time of difference >=80 of the hardness number of first test point of edge with burr and the average hardness in non-stress influence district, illustrate and have punching quality problems; In the time that the difference of the hardness number of first test point of edge with burr and the average hardness in non-stress influence district is less than 80, illustrate without punching quality problems, and difference more the bright punching quality of novel is better.
2. a kind of method of differentiating silicon steel punched chip performance by measuring microhardness as claimed in claim 1, is characterized in that: described load becomes positive correlation with HV hardness, refers to that load is chosen in 10 ~ 14g in the time of punching sample HV hardness≤150; In the time of punching sample 150 < HV hardness≤220, load is chosen at 15 ~ 18g; In the time that punching sample HV hardness is greater than 220, load is chosen in 19 ~ 20g.
3. a kind of method of differentiating silicon steel punched chip performance by measuring microhardness as claimed in claim 1, is characterized in that: the position deviation along metallographic specimen mid-depth line distribution tests point is controlled at ± 10% in.
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