CN104157598A - Plasma nitrogen treatment apparatus, and gate medium layer preparation method and device - Google Patents
Plasma nitrogen treatment apparatus, and gate medium layer preparation method and device Download PDFInfo
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- CN104157598A CN104157598A CN201410415005.0A CN201410415005A CN104157598A CN 104157598 A CN104157598 A CN 104157598A CN 201410415005 A CN201410415005 A CN 201410415005A CN 104157598 A CN104157598 A CN 104157598A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Abstract
The invention discloses a plasma nitrogen treatment apparatus. The plasma nitrogen treatment apparatus comprises a vacuum treatment cavity for supporting a pedestal of a substrate with a silicon dioxide film, a gas supply mechanism for supplying a nitrogen-containing gas to the vacuum treatment cavity, a plasma generating mechanism for ionizing the nitrogen-containing gas to nitrogen plasma, and a cooling mechanism for cooling the pedestal to -100 DEG C to 0 DEG C before injecting the nitrogen plasma in the silicon dioxide film. The invention also provides a gate medium layer preparation device with the plasma nitrogen treatment apparatus, and a corresponding gate medium layer preparation method. According to the invention, the reliability of a gate medium layer can be effectively improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly the Apparatus and method for of a kind of plasma nitridation process device, making gate dielectric layer.
Background technology
Integrated circuit is made up of millions of basic components, and these basic components comprise transistor, capacitor and resistor.Transistor generally includes source electrode, drain electrode and gate stack, and the composition of gate stack is first to form a dielectric layer (being generally silicon dioxide) above substrate, then on dielectric layer, cover the film (as polysilicon) of one deck as electrode.
Along with the develop rapidly of very lagre scale integrated circuit (VLSIC) (VLSI) and ultra large scale integrated circuit (ULSI), the size of MOS device constantly reduces, for increase device reaction speed, improve the capacity of drive current and storage capacitance, in device, the thickness of silicon dioxide gate dielectric layer constantly reduces.But, along with the reduction of the thickness of silicon dioxide gate dielectric layer, there will be some to reduce the effect of device performances.For example,, because the situation that grid leakage current (gate leakage) raises appears in tunnel effect (tunneling effect); Boron in the gate electrode of boron doping (boron doped) can be penetrated into the silicon substrate of below, not only causes the drift of threshold voltage, and silicon dioxide gate dielectric layer is caused to the reliability of damage and reduction silicon dioxide gate dielectric layer; Thin silicon dioxide gate dielectric layer is easily subject to the impact of hot carrier injury (hot carrier damage), and the high energy carriers that moves through dielectric layer can injure or destroy grid; In addition, thin silicon dioxide gate dielectric layer is also easily subject to Negative Bias Temperature Instability (NBTI) to be affected, and threshold voltage or drive current drift about along with the operating process of grid.
On the other hand, from the formula of drive current and gate capacitance, gate capacitance is larger, and drive current is larger; And gate dielectric layer dielectric constant is larger, gate capacitance is larger.
Therefore, need a kind of alternative gate dielectric layer material, not only will have enough thick actual (real) thickness to reduce leakage current density, and can provide high grid capacitance to increase drive current.In order to achieve the above object, the dielectric constant that alternative gate dielectric layer material has need to be higher than the dielectric constant of silicon dioxide.
A kind of solution is that nitrogen is injected to silicon dioxide layer to form silicon oxynitride (SiOxNy) gate dielectric layer, silicon oxynitride layer can either stop boron to infiltrate in the silicon substrate of below, can improve again the dielectric constant of gate dielectric layer, and then allow to use thicker dielectric layer.In recent years, plasma nitrided technology (Decoupled Plasma Nitridation, DPN) be used to nitrided gate oxide layer, this technology can obtain at polysilicon gate/oxide layer interface high nitrogen-containing, thereby prevents that boron from infiltrating in medium of oxides layer.As shown in Figure 1, in prior art, the preparation of silicon oxynitride dielectric layer mainly comprises three steps,
1. oxide layer growth: silicon substrate, after acid tank cleans, adopts original position steam oxidation (In-Situ Steam Generation, ISSG) or furnace oxidation (Furnace Oxidation) method growth SiO
2dielectric layer
2. nitrogen doping: adopt decoupled plasma nitridation technique (Decoupled Plasma Nitridation:DPN) to SiO
2medium carries out the doping of nitrogen, and the technological temperature of this step is room temperature;
3. annealing process: adopt post-nitridation anneal technique (PNA, Post Nitridation Anneal) stablize nitrogen doping and repair the plasma damage in dielectric layer.
But, in above-mentioned preparation technology, because nitrogen gas plasma is still with certain speed and energy injection silicon dioxide layer, if excessive being difficult to of the plasma damage degree causing repair by PNA high annealing.On the other hand, the interface that the diffusion that also needs to control nitrogen gas plasma avoids accumulating in silicon dioxide layer and substrate is caused the migration velocity of channel carrier is had a negative impact.
Summary of the invention
Main purpose of the present invention is to overcome the defect of prior art, provides a kind of and can reduce plasma nitridation process device and corresponding gate dielectric layer making apparatus and the method for nitrogen Implantation to the damage of silicon dioxide film/silicon substrate boundary layer.
For reaching above-mentioned purpose, the invention provides a kind of plasma nitridation process device, to implement plasma nitrogen for silicon dioxide film on substrate and inject, it comprises vacuum treatment chamber, it has the pedestal for having the substrate of silicon dioxide film described in supporting; Supply with the gas supply mechanism of nitrogenous gas to described vacuum treatment chamber; The plasma that is nitrogen plasma by nitrogenous gas ionization indoor described vacuum chamber generates mechanism; And cooling body, for described pedestal being cooled to-100 DEG C～0 DEG C before described nitrogen plasma injects described silicon dioxide film.
Preferably, described plasma nitridation process device also comprises transport sector and controlling organization, and described transport sector is for having the substrate transfer of silicon dioxide film and be positioned over described pedestal described; Described controlling organization is for being placed on cooling described pedestal after certain hour at described substrate, controls described gas supply mechanism and supplies with nitrogenous gas and control described plasma and generate mechanism and generate nitrogen plasma.
Preferably, described in described controlling organization control, cooling body started cooling to described pedestal and continues to be cooled to described plasma nitrogen and inject and finish before described substrate is positioned on described pedestal.
Preferably, in described pedestal, be provided with cooling channel, described cooling channel has import and outlet, the output of described cooling body is connected with outlet with the import of described cooling channel by transfer line respectively with input, and it is by providing cooling agent and reclaiming cooling to described pedestal through the described cooling agent of heat exchange from described cooling channel to described cooling channel.
The present invention also provides a kind of gate dielectric layer making apparatus, and it comprises the film formation device for form silicon dioxide film on substrate; For described silicon dioxide film is implemented to the above-mentioned plasma nitridation process device that plasma nitrogen injects; Carry out high annealing to form the thermal annealing device of gate dielectric layer for the described silicon dioxide film that nitrogen is injected; For described substrate is transferred to the transport sector that described film formation device, plasma nitridation process device and thermal annealing device are processed successively; And control the keying of described film formation device, plasma nitridation process device and thermal annealing device and control the controlling organization of the conveying action of described transport sector.
Preferably, described film formation device comprises rapid thermal anneal process chamber and/or vertical furnace tube process cavity, and described rapid thermal anneal process chamber is original position steam oxidation process cavity and/or rapid thermal oxidation process chamber.
Preferably, described annealing device comprises rapid thermal anneal process chamber.
Preferably, described controlling organization is placed on after cooling described pedestal certain hour at described substrate, controls described gas supply mechanism supply nitrogenous gas and control described plasma to generate mechanism's generation nitrogen plasma.
Preferably, described in described controlling organization control, cooling body started cooling to described pedestal and continues to be cooled to described plasma nitrogen and inject and finish before described substrate is positioned on described pedestal.
Further, the present invention also provides a kind of method of utilizing the said equipment to make gate dielectric layer, and it comprises:
On described substrate, form described silicon dioxide film;
The pedestal of described plasma nitridation process device is cooled to-100 DEG C～0 DEG C;
After described pedestal is cooling, described silicon dioxide film is carried out to the injection of plasma nitrogen; And
The described silicon dioxide film that injects nitrogen is carried out to high annealing, form described gate dielectric layer.
Compared to prior art, plasma nitridation process device, gate dielectric layer manufacture method and equipment proposed by the invention passes through under low temperature environment nitrogen Implantation silicon dioxide film, promote the decrystallized of silicon dioxide film, the diffusion effect that not only can reduce nitrogen ion make the nitrogen ion that mixes more poly amass the upper surface in silicon dioxide film, and can interrupt more Si-O key and come with nitrogen ionic bonding to improve the combination rate of nitrogen ion.
Brief description of the drawings
Fig. 1 is the flow chart of gate dielectric layer manufacture method in prior art;
Fig. 2 is the schematic diagram of the plasma nitridation process device of one embodiment of the invention;
Fig. 3 is the calcspar of the gate dielectric layer making apparatus of one embodiment of the invention;
Fig. 4 is the flow chart of the gate dielectric layer manufacture method of one embodiment of the invention.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
Fig. 2 has shown the plasma nitridation process device of one embodiment of the invention, it is decoupled plasma nitridation processing unit, can be used for that the silicon dioxide film on substrate is implemented to plasma nitrogen injects, should be appreciated that, plasma nitridation process device is only exemplary, it can comprise still less or more element, or the arrangement of this element may be to that indicated in the drawings identical or different.
Refer to Fig. 2, plasma nitridation process device comprises vaccum processor chamber 1, and gas supply mechanism 3, plasma generate mechanism's (not shown) and cooling body 4.The bottom of vacuum treatment chamber 1 is provided with the pedestal 2 for supporting pending substrate W, on substrate W, is formed with silicon dioxide film.It is indoor that nitrogenous gas is supplied to vacuum chamber by gas supply mechanism 3.The sidewall of vacuum treatment chamber or top board can arrange gas and import parts, and gas supply mechanism 3 imports parts with gas and is connected, and nitrogenous gas arrives gas by gas line and imports parts and then be directed into vacuum chamber indoor.Vacuum treatment chamber 1 also can connect exhaust apparatus, and exhaust apparatus is discharged interior chamber 1 nitrogenous gas through reaction and byproduct of reaction, the vacuum degree that the interior maintenance of chamber 1 is specified.Plasma generates mechanism's (not shown) for the nitrogenous gas ionization in vacuum treatment chamber 1 is formed to nitrogen plasma.Plasma generates mechanism can have various ways, for example form electromagnetic field by nitrogenous gas plasma to the induction coil power supply of vacuum treatment chamber top board or sidewall outer setting in chamber 1 inside by radio frequency source RF, or by the flat plane antenna in multiple gaps, microwave being imported to the interior generation plasma of chamber 1, the present invention is not limited.Cooling body 4 was cooled to pedestal-100 DEG C～0 DEG C before silicon dioxide film being injected at nitrogen plasma.Specifically, in pedestal 2, be provided with cooling channel, cooling body 4 is connected with cooling channel by two transfer lines, its by provide to cooling channel cooling agent and from cooling channel reclaim through with pedestal 2 the cooling agent of pending substrate W heat exchange come pedestal coolingly, make the temperature of pedestal reach the temperature of setting.In the present embodiment, cooling body 4 carries out just pedestal being cooled to-100 DEG C～0 DEG C before the nitrogen Implantation of silicon dioxide film in chamber 1, and therefore the injection of nitrogen ion is to carry out under low temperature environment.And under low temperature environment, the decrystallized effect of the nitrogen ion pair silicon dioxide film injecting will be higher than the effect of room temperature condition, generate mechanism with plasma and comprise that radio frequency source taking pulse mode power output is as example, the diffusion effect that not only reduces nitrogen ion under the condition of power same as the prior art and duty ratio makes the nitrogen ion injecting can more approach the upper surface of silicon dioxide, and more Si-O key can be interrupted and provide more Si+ to come and N ionic bonding.Therefore, can mix more N ion by the adjusting of plasma nitrogen injection technology time or power simultaneously also less to the damage of silicon dioxide film/silicon substrate boundary layer to improve nitrogen content.
In addition, plasma nitridation process device also comprises transport sector and controlling organization.Also be provided with for carrying out substrate and move into the opening of taking out of at the sidewall of vacuum treatment chamber 1.Transport sector is moved into substrate in chamber 1 from opening, is positioned on pedestal 2.Controlling organization is placed on cooling pedestal 2 certain hours at substrate, after 1 minute, controlling gas supply mechanism 3 supplies with nitrogenous gas and controls plasma generation mechanism by nitrogenous gas ionization generation nitrogen plasma, thereby under low temperature environment, silicon dioxide film is carried out to nitrogen Implantation, in this process cooling body all the time to pedestal 2 cooling make its temperature remain on-100 DEG C～0 DEG C until nitrogen treatment finish.After nitrogen treatment completes, substrate is taken out of vacuum treatment chamber by transport sector.
Next, in connection with specific embodiment, gate dielectric layer making apparatus of the present invention and gate dielectric layer manufacture method are described in detail.
Please refer to Fig. 3, its demonstration be the calcspar of the gate dielectric layer making apparatus of the present embodiment.Gate dielectric layer making apparatus comprises the film formation device 31 for form silicon dioxide film on substrate, for silicon dioxide film is implemented to the plasma nitridation process device 32 that plasma nitrogen injects, carry out high annealing to form the thermal annealing device 33 of gate dielectric layer for the silicon dioxide film that nitrogen is injected, for substrate is transferred to film formation device 31 successively, the transport sector 34 that plasma nitridation process device 32 and thermal annealing device 33 are processed, and be controlled to film device 31, the controlling organization 35 of the conveying action of the keying of plasma nitridation process device 32 and thermal annealing device 33 and control transport sector.
Wherein, film formation device 31 is for the silicon dioxide film of growing, it can comprise rapid thermal anneal process chamber and/or vertical furnace tube process cavity, the growth that is to say silicon dioxide film can adopt rapid thermal anneal process to grow in rapid thermal anneal process chamber, also can in vertical furnace tube process cavity, adopt boiler tube thermal oxidation technology to grow, can also in these two process cavity, adopt respectively these corresponding two techniques to grow.Preferably, rapid thermal anneal process chamber is original position steam oxidation (In-Situ Steam Generation, ISSG) process cavity and/or rapid thermal oxidation (Rapid Thermal Oxidation, RTO) process cavity, like this, silicon dioxide film can adopt ISSG technique to grow in ISSG process cavity, also can in RTO process cavity, adopt RTO technique to grow, and can also in ISSG and these two process cavity of RTO, adopt respectively ISSG and RTO technique to grow.Plasma nitridation process device 32 is implemented nitrogen Implantation to silicon dioxide film by pedestal being cooled to-100 DEG C～0 DEG C under low temperature environment.The structure of plasma nitridation process device 32 is same as the previously described embodiments with action, and therefore not to repeat here.Annealing device 33 comprises that the silicon dioxide film adulterating to nitrogen in rapid thermal anneal process chamber carries out high-temperature annealing process, and this technique can be carried out under atmosphere of inert gases.Adopt high-temperature annealing process to stablize Si-N key on the one hand and make the nitrogen in silicon dioxide film stably-doped, repaired on the other hand the plasma damage of silicon dioxide film, thereby finally formed the gate dielectric layer of silicon oxynitride.Because the low-temperature plasma nitrogen carrying out in plasma nitridation process device 32 injects the upper surface place that makes more nitrogen ion accumulate in silicon dioxide film and also reduced the plasma damage of silicon dioxide film/silicon substrate boundary layer, therefore the final silicon oxynitride gate dielectric layer forming has high nitrogen-containing and performance is better in surface thereon.
Transport sector 34 transfers to successively film formation device 31, plasma nitridation process device 32 and thermal annealing device 33 by substrate and carries out respectively processing separately, and controlling organization 35 is controlled to the action of film device 31, plasma nitridation process device 32, thermal annealing device 33 and transport sector 34 to realize the preparation of gate dielectric layer.
Please refer to Fig. 4, the method for utilizing the said equipment to make gate dielectric layer comprises the following steps:
S1: form silicon dioxide film on substrate;
S2: the pedestal of plasma nitridation process device is cooled to-100 DEG C～0 DEG C;
S3: after pedestal is cooling, silicon dioxide film is carried out to the injection of plasma nitrogen;
S4: the silicon dioxide film that injects nitrogen is carried out to high annealing, form gate dielectric layer.
Wherein step S1 completes in film formation device 31, and step S2 and S3 complete in plasma nitridation process device 32, and step S4 completes in thermal annealing device 33.
Then in above-mentioned gate dielectric layer manufacturing process, there is as above each device of the making apparatus of the gate dielectric layer of structure and the action of mechanism and describe.
First, controlling organization 35 send signal make transport sector 34 by substrate transport to the chamber of film formation device 31, controlling organization 35 is controlled to film device and opens to carry out substrate is carried out to the growth technique of silicon dioxide film.In silicon dioxide film growth course, it is cooling that controlling organization 35 carries out the pedestal of the cooling body article on plasma nitrogen treatment device 32 of plasma nitridation process device 32, makes it to-100 DEG C～0 DEG C.After silicon dioxide film growth, controlling organization 35 makes transport sector that substrate is taken out of and be moved into from film formation device 31 in the vacuum treatment chamber 1 of plasma nitridation process device 32, to be placed on cooling pedestal and to control plasma nitrided device and carry out nitrogen Implantation step.Specifically, when substrate be placed on cooling pedestal certain hour as one minute after, controlling organization makes gas supply mechanism 3 supply with nitrogenous gas and controls plasma to generate mechanism by nitrogenous gas ionization generation nitrogen plasma, thereby under low temperature environment, silicon dioxide film is carried out to nitrogen Implantation, in this process cooling body all the time to pedestal 2 cooling make its temperature remain on-100 DEG C～0 DEG C until nitrogen treatment finish.After nitrogen treatment completes, transport sector is taken out of substrate vacuum treatment chamber and is moved into thermal annealing device 33.The corresponding control thermal annealing of controlling organization device 33 is carried out high-temperature thermal annealing technique, and the silicon dioxide film of nitrating is carried out plasma damage reparation and promotes the stable of nitrogen content, finally on substrate, forms silicon oxynitride gate dielectric layer.After high-temperature thermal annealing technique completes, by transport sector 34, the substrate with gate dielectric layer is taken out of.
In sum, the present invention is undertaken cooling by the pedestal of article on plasma nitrogen treatment device, under low temperature environment, carry out the injection of nitrogen plasma, the silicon oxynitride gate medium forming thus not only has higher dielectric constant, less plasma damage, and nitrogen content more poly amasss in gate medium surface, can avoid injuring through silicon dioxide or destroying grid, therefore has higher reliability.
Although the present invention discloses as above with preferred embodiment; so described many embodiment only give an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a plasma nitridation process device, implements plasma nitrogen for the silicon dioxide film on substrate and injects, and it is characterized in that, comprising:
Vacuum treatment chamber, it has the pedestal for having the substrate of silicon dioxide film described in supporting;
Supply with the gas supply mechanism of nitrogenous gas to described vacuum treatment chamber;
The plasma that is nitrogen plasma by nitrogenous gas ionization indoor described vacuum chamber generates mechanism; And
Cooling body, for being cooled to-100 DEG C～0 DEG C by described pedestal before described nitrogen plasma injects described silicon dioxide film.
2. plasma nitridation process device according to claim 1, is characterized in that, also comprises:
Transport sector, for having the substrate transfer of silicon dioxide film and be positioned over described pedestal described;
Controlling organization, for being placed at described substrate on cooling described pedestal after certain hour, controlling described gas supply mechanism and supplies with nitrogenous gas and control described plasma and generate mechanism and generate nitrogen plasma.
3. plasma nitridation process device according to claim 2, it is characterized in that, cooling body started cooling to described pedestal and continues to be cooled to described plasma nitrogen and inject and finish before described substrate is positioned on described pedestal described in described controlling organization control.
4. plasma nitridation process device according to claim 1, it is characterized in that, in described pedestal, be provided with cooling channel, described cooling channel has import and outlet, the output of described cooling body is connected with outlet with the import of described cooling channel by transfer line respectively with input, and it is by providing cooling agent and reclaiming cooling to described pedestal through the described cooling agent of heat exchange from described cooling channel to described cooling channel.
5. a gate dielectric layer making apparatus, is characterized in that, comprising:
Film formation device, for forming silicon dioxide film on substrate;
Plasma nitridation process device as described in claim 1 or 4, injects for described silicon dioxide film is implemented to plasma nitrogen;
Thermal annealing device, carries out high annealing to form gate dielectric layer for the described silicon dioxide film that nitrogen is injected;
Transport sector, processes for described substrate being transferred to successively to described film formation device, plasma nitridation process device and thermal annealing device; And
Controlling organization, controls the keying of described film formation device, plasma nitridation process device and thermal annealing device and controls the conveying action of described transport sector.
6. gate dielectric layer making apparatus according to claim 5, it is characterized in that, described film formation device comprises rapid thermal anneal process chamber and/or vertical furnace tube process cavity, and described rapid thermal anneal process chamber is original position steam oxidation process cavity and/or rapid thermal oxidation process chamber.
7. gate dielectric layer making apparatus according to claim 5, is characterized in that, described annealing device comprises rapid thermal anneal process chamber.
8. gate dielectric layer making apparatus according to claim 5, it is characterized in that, described controlling organization is placed on after cooling described pedestal certain hour at described substrate, controls described gas supply mechanism supply nitrogenous gas and control described plasma to generate mechanism's generation nitrogen plasma.
9. gate dielectric layer making apparatus according to claim 5, is characterized in that, cooling body started cooling to described pedestal and continues to be cooled to described plasma nitrogen and inject and finish before described substrate is positioned on described pedestal described in described controlling organization control.
10. a method of utilizing the gate dielectric layer making apparatus described in claim 5 to make gate dielectric layer, is characterized in that, comprising:
On described substrate, form described silicon dioxide film;
The pedestal of described plasma nitridation process device is cooled to-100 DEG C～0 DEG C;
After described pedestal is cooling, described silicon dioxide film is carried out to the injection of plasma nitrogen; And
The described silicon dioxide film that injects nitrogen is carried out to high annealing, form described gate dielectric layer.
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| CN104392948A (en) * | 2014-11-25 | 2015-03-04 | 上海华力微电子有限公司 | Device and method for preparing nitride grid dielectric layer |
| CN104465292A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
| CN112236843A (en) * | 2018-06-06 | 2021-01-15 | 堺显示器制品株式会社 | Laser annealing method, laser annealing apparatus, and method for manufacturing active matrix substrate |
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Application publication date: 20141119 |