CN104142697A - Temperature control device and method of high power device for space - Google Patents
Temperature control device and method of high power device for space Download PDFInfo
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- CN104142697A CN104142697A CN201410348079.7A CN201410348079A CN104142697A CN 104142697 A CN104142697 A CN 104142697A CN 201410348079 A CN201410348079 A CN 201410348079A CN 104142697 A CN104142697 A CN 104142697A
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
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- 230000005693 optoelectronics Effects 0.000 description 3
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- 230000009514 concussion Effects 0.000 description 2
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Abstract
The invention discloses a temperature control device and method for a high power device for space. The device comprises a direct-current power supply, a temperature sensor, the high power device, a TEC, a thermal insulation shell, a thermal capacity structural component, a temperature sensor data acquisition device, a temperature controller and a heat tube. The method includes the steps that before the high power device starts to work, the temperature of the working device in the thermal insulation shell is adjusted to the minimum value T0 of the normal working temperature through the TEC, during the working time t of the high power device, heat generated by the high power device is stored through the thermal capacity device, and the temperature of the high power device is made to be smaller than TMAX when work is finished. Through the temperature control device and method, the working temperature of the high power device can be accurately controlled at low cost easily, conveniently and effectively.
Description
Technical field
The present invention relates to domain of control temperature, relate in particular to a kind of attemperating unit and method of the high-power component of applying in space environment.
Background technology
Space environment refers to sharply changing environment of heat insulation vacuum and temperature-40 DEG C～50 DEG C; Space refers to that with high-power component normal working temperature is at 10 DEG C～30 DEG C near room temperatures, all kinds of optoelectronic devices more than thermal power 50W.Along with the high speed development of space technology, more high power light electron device is applied in various spacecrafts gradually.But the often very large and normal working temperature relatively low (10 DEG C～30 DEG C near room temperatures) that requires of the thermal value of high power light electron device, especially sharply change at vacuum heat-insulation and temperature in (40～50 DEG C) space environment, heat history effect causes device temperature sharply to rise until damage.Space with the temperature control technology of high-power component due to the conventional heat radiation in the ground such as space environment feature has been got rid of water-cooled, air-cooled Temp. control method.
Traditionally, the temperature control technology of space application generally conducts to spacecraft heat radiation position with heat pipe by the heat production of high-power component, then is diffused in space environment in heat radiation mode.Adopt in this way, once heat radiation position in high thermal environment, power device heat is difficult to derive, space environment heat may the reverse high-power component that enters, and causes temperature more surging.
In recent years, according to high-power component only need the to start shooting work characteristics of work finite time t for space, gradually the heat dissipation technology of hot buffering method is applied in temperature control, is temporarily stored in thermal capacitance device by producing heat in working time t, more otherwise storing heat got rid of or utilized.Although the thermal capacitance device heat storage capacity of hot buffering method is very strong, this passive way cannot accurately be controlled temperature.And, some accurate high-power component start working temperatures are at room temperature range (10 DEG C～30 DEG C), this just requires not only will adsorb in time producing heat in working time t, and high-power component operating ambient temperature also needs the stable lower level that is controlled at.Only be difficult to competent accurate temperature control with the thermal capacitance structural member of hot buffering method work.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, attemperating unit and the method for a kind of space high-power component temperature is provided, can realize easy, effectively, at low cost the accurate control to high-power component working temperature.
The invention provides a kind of space high-power component attemperating unit, comprise direct supply, temperature sensor, semiconductor chilling plate (TEC), thermally insulating housing, thermal capacitance device, temperature sensing data collector, temperature controller and heat pipe; High-power component, thermal capacitance device, semiconductor chilling plate, heat pipe are successively in succession; High-power component, thermal capacitance device, temperature sensor are wrapped in thermally insulating housing, and semiconductor chilling plate embeds in thermally insulating housing; Thermal capacitance device comprises thermal capacitance material, and holds the structural member of thermal capacitance material, and structural member is made up of high thermal conductivity materials, and temperature conductivity scope is preferably 100～400W/mK; Thermal capacitance device is for storing the heat discharging when high-power component is worked; Heat pipe simultaneously with spacecraft shell in succession, for heat is conducted to space environment; Temperature sensor contact high-power component, for detection of the temperature of described high-power component, and feeds back to temperature controller by detection signal through temperature sensing data collector; Temperature controller is used for comparing the real time temperature of preset temperature and high-power component, and generates corresponding temperature control signals; Semiconductor chilling plate heats/freezes under the effect of temperature control signals; Direct supply is used to described attemperating unit that operation power is provided.
Preferably in thermal capacitance device, thermal capacitance material is high latent heat material, and latent heat of phase change scope is preferably 150～300kJ/kg; Or high specific heat capacity material, specific heat capacity scope is preferably 500～1000J/kgK.
Preferably, high latent heat material is organometallics or polyalcohols organic substance, and high specific heat capacity material is aluminium alloy.
Preferably, organometallics is stratiform calcium state ore deposit, and polyalcohols organic substance is neopentyl glycol.
Preferably, thermally insulating housing is made up of teflon.
Preferably, temperature sensor is thermistor, and temperature sensing data collector is D/A converter module, and temperature controller is programmable control chip.
The present invention also provides a kind of space high-power component Temp. control method, and performing step is as follows:
(1) before high-power component is started working, detect in real time the temperature of high-power component by temperature sensor, then by temperature controller by temperature sensing data and the high-power component minimum temperature T that normally works
0compare, produce control signal, under the effect of control signal, by changing direction or the size of semiconductor chilling plate input current, make semiconductor chilling plate that high-power component is freezed in advance or be heated, and carry out heat conduction by heat pipe and space environment; By thermally insulating housing is set, described high-power component, thermal capacitance device, temperature sensor are wrapped in described thermally insulating housing, be installed in described thermally insulating housing embedded described semiconductor chilling plate, make thermally insulating housing become insulator under the adjusting of semiconductor chilling plate;
(2) when high-power component reaches normal work minimum temperature T
0after, serviceability temperature controller control semiconductor chilling plate, the power of reduction semiconductor chilling plate, makes high-power component temperature maintain T
0.
(3) after high-power component is started working, the heat that uses thermal capacitance device storage high-power component to produce, and by heat pipe, heat is conducted to space environment, make in high-power component working time t, the temperature of high-power component is no more than normal work and allows maximum temperature T
mAX;
(4), after high-power component quits work, described semiconductor chilling plate and power supply disconnect.
Wherein, in step (3), semiconductor chilling plate can freeze by high power, also can low-power freeze or not work.Because semi-conductive refrigeration is in short-term poor, for saving the energy, simplifying and control, preferably, the operating power of semiconductor chilling plate in step (3), maintains high-power component temperature with semiconductor chilling plate in step (2) and maintains T
0time operating power identical.
According to foregoing invention method, after high-power component quits work, disconnect being connected of semiconductor chilling plate and power supply, carry out again when needed foregoing invention method, high-power component is carried out to temperature control.Preferably, the step of foregoing invention method (4) can replace with: " high-power component quit work after, re-execute described step (1) to (3) ".According to this optimal technical scheme, adopt circulating temperature control, make the temperature of high-power component maintain normal working temperature scope T always
0to T
mAXbetween, thereby be convenient to the quick startup of high-power component, also extend the serviceable life of high-power component.
The technique effect that the present invention compared with prior art obtains is:
(1) the inventive method adopts the work initial temperature of active temperature control mode control high-power component, by estimating temperature rise degree, eliminate the impact of space environment temperature variation on high-power component temperature, than higher, more reliable without source heat-dissipating Temp. control method controllability, and temperature control process is easy, effective, cost is low;
(2) traditional temperature control PID mode changes near device temperature concussion work allowable temperature point, for the less for example power device below 10W of device of thermal power, concussion amplitude I is to be considered as stable temperature control, but for tens watts of higher calorific power devices, magnitude of vibrations is difficult to greatly suppress, can not be equivalent to the situation of temperature stabilization, control and lost efficacy.The thermal power that the inventive method produces while utilizing thermal capacitance device to absorb device work, reduce heat history speed, directly temperature rise degree is controlled, solved the problem that traditional PI D temperature control runs into, within device temperature being controlled to allowed band in given working time t.
(3) apparatus of the present invention and method can be in work certain hour t, heat production power is high and optoelectronic device that working temperature and area of dissipation are little, for example heat production power 50W is above, area of dissipation is less than 100mm × 100mm, working temperature is at the optoelectronic device of room temperature range (10 DEG C～30 DEG C), carries out effectively, temperature is accurately controlled cheaply.
(4) profile of apparatus of the present invention, without outstanding structure, is saved space; Blocking design, is convenient to install; Can realize easy, effectively, at low cost the accurate control to high-power component temperature.
Brief description of the drawings
Fig. 1 is attemperating unit schematic diagram of the present invention;
Fig. 2 is a kind of temperature control process process flow diagram of the present invention;
Fig. 3 is another temperature control process process flow diagram of the present invention;
Fig. 4 is that high-power component course of work heat of the present invention transmits schematic diagram;
Fig. 5 is volume element schematic diagram in finite element algorithm.
Embodiment
Below in conjunction with specific embodiment, introduce in detail a kind of space high-power component Temp. control method of the present invention and device.
As shown in Figure 1, attemperating unit of the present invention comprises direct supply 1, temperature sensor 2, semiconductor chilling plate (TEC) 4, thermally insulating housing 5, thermal capacitance device 6, temperature sensing data collector 7, temperature controller 8 and heat pipe 9; High-power component 3, thermal capacitance device 6, semiconductor chilling plate 4, heat pipe 9 are successively in succession, heat pipe 9 simultaneously with spacecraft shell 10 in succession, the heat that high-power component produces conducts in space environment through thermal capacitance device 6, semiconductor chilling plate 4, heat pipe 9, spacecraft shell 11; High-power component 3, thermal capacitance device 6, temperature sensor 2 are wrapped in thermally insulating housing 5, and semiconductor chilling plate 4 embeds in described thermally insulating housing 5; Thermal capacitance device 6 comprises thermal capacitance material, and holds the structural member of thermal capacitance material, and described structural member is made up of high thermal conductivity materials, as aluminium alloy; The heat that thermal capacitance device 6 one side discharge while work for storing high-power component 3, also conducts to space environment by heat on the other hand; Temperature sensor 2 contacts high-power component 3, for detection of the temperature of described high-power component 3, and detection signal is fed back to temperature controller 9 through temperature sensing data collector 7; Temperature controller 9 is for the real time temperature of preset temperature and high-power component relatively, and generates corresponding temperature control signals; Temperature control signals, by changing input current direction, the size of semiconductor chilling plate, is controlled heating/freezing of semiconductor chilling plate 4; Preset temperature parameter and temperature control program are predeterminable in temperature controller, and direct supply 1 is used to described attemperating unit that operation power is provided.Thermally insulating housing is made up of low heat conductivity heat-barrier material, as teflon.Temperature sensor is thermistor.Temperature sensing data sink is D/A converter module.Temperature controller is that programmable control chip is as FPGA.
Thermal capacitance material in thermal capacitance device 6 can be high latent heat material, preferably adopts solid-solid phase-change material, as polyalcohols organic substances such as the organometallicss such as stratiform calcium state ore deposit or neopentyl glycols (NPG).Phase-change material temperature in the time undergoing phase transition heat absorption remains unchanged, the temperature rise can effectively control high-power component work time.In the time that thermal capacitance material adopts high latent heat material, the structural member of thermal capacitance device 6 should seal thermal capacitance material.Thermal capacitance material in capacitance device 6 can be also high specific heat capacity material, preferably adopts aluminium alloy.
Below specific embodiments of the invention:
Choose accurate high power electronic device for a kind of space, floorage is 40mm × 100mm, 10 DEG C～30 DEG C of normal working temperature scopes, i.e. T
0=10 DEG C, T
mAX=30 DEG C, permission maximum temperature rise is 20K.When device is worked with rated power, heat production power P is 80W, and assigned work time t is 3min.
Temperature sensor used is pasted sheet type thermistor PT100, for it configures corresponding temperature sensing data collector; Semiconductor chilling plate maximum operating currenbt 4A used, voltage breakdown 15V; Thermally insulating housing used is teflon; Using FPGA as s operation control chip, realize temperature control.
As shown in Figure 2, adopt following Temp. control method to carry out temperature control: before high-power component is started working, detect in real time the temperature of high-power component by temperature sensor, then by temperature controller by temperature sensing data and the high-power component minimum temperature T that normally works
0compare, produce control signal, under the effect of control signal, high-power connection semiconductor chilling plate; When high-power component reaches normal work minimum temperature T
0after, serviceability temperature controller control semiconductor chilling plate, the power of reduction semiconductor chilling plate, makes high-power component temperature maintain T
0; Maintain the now input electric power of semiconductor chilling plate; High-power component is started working; After time t, high-power component quits work, and semiconductor chilling plate and power supply disconnect.
In addition as shown in Figure 3, also can be optimized above-mentioned Temp. control method: after high-power component working time t,, while quitting work, semiconductor chilling plate does not disconnect with power supply, but again inquires about high-power component temperature, and high-power component temperature is controlled to normal work minimum temperature T
0, reenter temperature controlled processes, to realize temperature cycles control, the temperature of high-power component is maintained within the scope of normal working temperature always.
Taking the Temp. control method shown in Fig. 2 as example, according to the difference of thermal capacitance material, test respectively as follows:
(1) thermal capacitance material adopts high latent heat material
A kind of latent heat of phase change of thermal capacitance material selection is 187kJ/kg, 20 DEG C of phase transformation temperature pointses, and density is density 1.3g/cm
3solid-solid phase transition material.Fill the about 77g of phase-change material mass M, volume is about 60cm
3.
Wherein, ρ
qit is the latent heat of phase change of phase-change material.
Attemperating unit is placed in incubator (in incubator 50 DEG C with virtual space ultimate temperature environment).Open in advance TEC cool/heat process, semiconductor chilling plate working current 4A, voltage 12V, after about 30min, reduces semiconductor chilling plate working current to 1A, and voltage 2V maintains the interior temperature stabilization of housing at 10 DEG C.The 3min of device continuous working subsequently, heat transfer process as shown in Figure 4.
Available Heat Conduction Differential Equations calculates its Temperature Distribution of device, according to result of calculation, device validity is evaluated.The 3min that works under thermal power 80W, the hot buffering course model of foundation is:
Wherein, ρ is thermal capacitance density of material, and c is thermal capacitance material specific heat capacity, and k is the thermal conductivity of thermal capacitance material.If thermal capacitance material is only the high specific heat capacity materials such as aluminium alloy, c is constant.For phase-change material, c is the function about temperature T:
Boundary condition is respectively:
1. high-power component and thermal capacitance material boundary temperature value
T
W＝10℃，(t≥t
P)
Wherein, t
pit is the phase transformation zero hour.
2. high-power component and thermal capacitance material boundary heat flow density value
Wherein, n is heat transfer direction, and S is thermal capacitance unit floorage sum.
Carry out the numerical simulation of Temperature Distribution by Finite Element Method, whole device is decomposed into the cubic units that several volumes are Δ V, as shown in Figure 5.Δ V is less, and result of calculation is more accurate.From t
0=0 moment, to i the volume element temperature difference Δ T that heat conduction forms in time Δ t
icalculate:
Wherein, P
inrepresent the thermal power vector of each of volume element, be input as on the occasion of, be output as negative value.And then draw the Temperature Distribution at Δ t whole hot snubber assembly of moment, using this result of calculation as next moment starting condition, iterative process is undertaken by finite element algorithm software.Thermal power P continues after 3min, and analysis result display device temperature rise Δ T is about 10K, and device temperature is still less than 30 DEG C, and actual experiment also demonstrates similar result, and device work temperature remains in allowed band.
(2) thermal capacitance material adopts respectively high specific heat capacity material
It is the aluminum alloy materials of 1200J/kg that thermal capacitance structure is selected a kind of thermal capacitance, allows maximum temperature rise 20K, the about 823g of so required quality m, and volume is about 305cm
3.
Wherein, ρ
cthe specific heat of aluminium alloy.
According to Temp. control method of the present invention, attemperating unit is placed in incubator (in incubator 50 DEG C with virtual space ultimate temperature environment).Open in advance TEC cool/heat process, semiconductor chilling plate working current 4A, voltage 12V, after about 30min, reduces semiconductor chilling plate working current to 1A, and voltage 2V maintains the interior temperature stabilization of housing at 10 DEG C.The 3min of power device continuous working subsequently.
Numerical simulation also demonstrates the result similar to first kind of way with actual experiment, and after power device work 3min, device temperature still, below 30 DEG C, has illustrated that the space high-power component attemperating unit in this embodiment is effective.
The present invention not detailed description is known to the skilled person technology.
Claims (10)
1. a space high-power component attemperating unit, is characterized in that: comprise direct supply (1), temperature sensor (2), semiconductor chilling plate (4), thermally insulating housing (5), thermal capacitance device (6), temperature sensing data collector (7), temperature controller (8) and heat pipe (9);
Described high-power component (3), thermal capacitance device (6), semiconductor chilling plate (4), heat pipe (10) are successively in succession; Described high-power component (3), thermal capacitance device (6), temperature sensor (2) are wrapped in described thermally insulating housing (5), and described semiconductor chilling plate (4) embeds in described thermally insulating housing (5); Described thermal capacitance device (6) comprises thermal capacitance material, and holds the structural member of thermal capacitance material, and described structural member is made up of high thermal conductivity materials, and thermal capacitance device (6) is for storing the heat discharging when high-power component (3) is worked; Described heat pipe (9) simultaneously with spacecraft shell (10) in succession, for heat is conducted to space environment;
Described temperature sensor (2) contact high-power component (3), for detection of the temperature of described high-power component (3), and detection signal is fed back to described temperature controller (8) through temperature sensing data collector (7); Temperature controller (8) is for the real time temperature of preset temperature and high-power component relatively, and generates corresponding temperature control signals; Described semiconductor chilling plate (4) heats/freezes under the effect of temperature control signals;
Described direct supply (1) is used to described attemperating unit that operation power is provided.
2. space according to claim 1 high-power component attemperating unit, is characterized in that: in described thermal capacitance device (6), thermal capacitance material is high latent heat material or high specific heat capacity material.
3. space according to claim 2 high-power component attemperating unit, is characterized in that: described high latent heat material is organometallics or polyalcohols organic substance, and described high specific heat capacity material is aluminium alloy.
4. space according to claim 3 high-power component attemperating unit, is characterized in that: described organometallics is stratiform calcium state ore deposit, and described polyalcohols organic substance is neopentyl glycol.
5. space according to claim 1 high-power component attemperating unit, is characterized in that: described in hold thermal capacitance material structural member made by aluminium alloy.
6. space according to claim 1 high-power component attemperating unit, is characterized in that: described thermally insulating housing (5) is made up of teflon.
7. space according to claim 1 high-power component attemperating unit, it is characterized in that: described temperature sensor (2) is thermistor, described temperature sensing data collector (7) is D/A converter module, and described temperature controller is programmable control chip.
8. a space high-power component Temp. control method, is characterized in that comprising the following steps:
(1) before high-power component is started working, detect in real time the temperature of high-power component by temperature sensor, then by temperature controller by temperature sensing data and the high-power component minimum temperature T that normally works
0compare, produce control signal, under the effect of control signal, by changing direction or the size of semiconductor chilling plate input current, make semiconductor chilling plate that high-power component is freezed in advance or be heated, and carry out heat conduction by heat pipe and space environment; By thermally insulating housing is set, high-power component, thermal capacitance device, temperature sensor are wrapped in described thermally insulating housing, be installed in described thermally insulating housing embedded described semiconductor chilling plate, make thermally insulating housing become insulator under the adjusting of semiconductor chilling plate;
(2) when high-power component reaches normal work minimum temperature T
0after, serviceability temperature controller control semiconductor chilling plate, the power of reduction semiconductor chilling plate, makes high-power component temperature maintain T
0;
(3) after high-power component is started working, the heat that uses thermal capacitance device storage high-power component to produce, and by heat pipe, heat is conducted to space environment, make in high-power component working time t, the temperature of high-power component is no more than normal work and allows maximum temperature T
mAX;
(4), after high-power component quits work, described semiconductor chilling plate and power supply disconnect.
9. space as claimed in claim 8 high-power component Temp. control method, it is characterized in that, execution step (4) after execution step (3), described step (4) is: after high-power component quits work, re-execute described step (1) to (3).
10. space high-power component Temp. control method according to claim 8 or claim 9, it is characterized in that: the operating power of semiconductor chilling plate in described step (3), maintains high-power component temperature with semiconductor chilling plate in step (2) and maintain T
0time operating power identical.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104679059A (en) * | 2014-12-26 | 2015-06-03 | 北京兆易创新科技股份有限公司 | Temperature control system of integrated circuit |
| CN106067680A (en) * | 2015-04-22 | 2016-11-02 | 通用电气能源能量变换技术有限公司 | Improved the life-span of semiconductor by reducing the temperature change in semiconductor by means of reactive power |
| CN106335717A (en) * | 2015-07-10 | 2017-01-18 | 青岛中集特种冷藏设备有限公司 | Measurement system for temperature in refrigerating container, control method and refrigerating container |
| CN108371180A (en) * | 2018-03-19 | 2018-08-07 | 华南理工大学 | A kind of embedded object and embedding method of the ethylene gas with sustained release performance |
| CN111367330A (en) * | 2020-03-05 | 2020-07-03 | 上海交通大学 | Airborne precision measurement instrument temperature control device based on heat pipe heat dissipation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1549074A (en) * | 2003-05-13 | 2004-11-24 | 大连理工大学 | Method and apapratus for temperature circulation control |
| CN101118104A (en) * | 2007-08-28 | 2008-02-06 | 武汉凌云光电科技有限责任公司 | High power compact thermostatic device without liquid cooling |
| JP2008118149A (en) * | 1997-04-04 | 2008-05-22 | Unisys Corp | Electronic mechanical assembly and method of thermally combining electronic device to heat exchange member |
| CN201327268Y (en) * | 2008-12-25 | 2009-10-14 | 上海神开石油化工装备股份有限公司 | Temperature control device of semi-conductive refrigeration and drying system |
| CN101813951A (en) * | 2009-12-07 | 2010-08-25 | 中国科学院西安光学精密机械研究所 | Temperature-controllable focal plane detector mechanism |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008118149A (en) * | 1997-04-04 | 2008-05-22 | Unisys Corp | Electronic mechanical assembly and method of thermally combining electronic device to heat exchange member |
| CN1549074A (en) * | 2003-05-13 | 2004-11-24 | 大连理工大学 | Method and apapratus for temperature circulation control |
| CN101118104A (en) * | 2007-08-28 | 2008-02-06 | 武汉凌云光电科技有限责任公司 | High power compact thermostatic device without liquid cooling |
| CN201327268Y (en) * | 2008-12-25 | 2009-10-14 | 上海神开石油化工装备股份有限公司 | Temperature control device of semi-conductive refrigeration and drying system |
| CN101813951A (en) * | 2009-12-07 | 2010-08-25 | 中国科学院西安光学精密机械研究所 | Temperature-controllable focal plane detector mechanism |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104679059A (en) * | 2014-12-26 | 2015-06-03 | 北京兆易创新科技股份有限公司 | Temperature control system of integrated circuit |
| CN106067680A (en) * | 2015-04-22 | 2016-11-02 | 通用电气能源能量变换技术有限公司 | Improved the life-span of semiconductor by reducing the temperature change in semiconductor by means of reactive power |
| CN106067680B (en) * | 2015-04-22 | 2021-06-25 | 通用电气能源能量变换技术有限公司 | Improving the lifetime of semiconductors by reducing temperature variations in the semiconductor by means of reactive power |
| CN106335717A (en) * | 2015-07-10 | 2017-01-18 | 青岛中集特种冷藏设备有限公司 | Measurement system for temperature in refrigerating container, control method and refrigerating container |
| CN108371180A (en) * | 2018-03-19 | 2018-08-07 | 华南理工大学 | A kind of embedded object and embedding method of the ethylene gas with sustained release performance |
| CN111367330A (en) * | 2020-03-05 | 2020-07-03 | 上海交通大学 | Airborne precision measurement instrument temperature control device based on heat pipe heat dissipation |
| CN111367330B (en) * | 2020-03-05 | 2021-08-03 | 上海交通大学 | Airborne precision measurement instrument temperature control device based on heat pipe heat dissipation |
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