CN104134852A - Broadband dual-polarized oscillator - Google Patents
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- CN104134852A CN104134852A CN201410316603.2A CN201410316603A CN104134852A CN 104134852 A CN104134852 A CN 104134852A CN 201410316603 A CN201410316603 A CN 201410316603A CN 104134852 A CN104134852 A CN 104134852A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 238000002955 isolation Methods 0.000 claims description 55
- 230000000903 blocking effect Effects 0.000 claims description 40
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract description 14
- 238000004088 simulation Methods 0.000 abstract description 6
- 238000005388 cross polarization Methods 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005094 computer simulation Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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Abstract
Description
技术领域 technical field
本发明涉及天线领域,具体涉及一种宽频带双极化振子。 The invention relates to the field of antennas, in particular to a broadband dual-polarization vibrator.
背景技术 Background technique
目前,4G网络越来越普及,有些国家也出现了5G网络;从运营商的角度来讲,为节省投资及考虑后续如何实现可扩容性、兼容性、多系统、多制式共存已越来越成为一种趋势。如此对基站天线也提出了更高的要求,为满足不同制式的频率,2000~3000MHz 频段等超宽频带基站天线被广泛提出;而要实现基站天线的宽带化,首先要面临的就是作为其核心部件的辐射单元的带宽扩展问题,如何在整个宽带频带内,保持较高增益、波束收敛一致性、良好的前后比及高交叉极化比是一个不小的挑战;尤其是超宽频带问题,满足5G和4G(LTE)等高频段要求的振子和以该振子制作的天线均是亟需要解决的问题。 At present, 4G networks are becoming more and more popular, and 5G networks have also appeared in some countries; from the perspective of operators, in order to save investment and consider how to achieve scalability, compatibility, multi-system and multi-standard coexistence, it has become more and more become a trend. In this way, higher requirements are also put forward for base station antennas. In order to meet the frequencies of different standards, ultra-wideband base station antennas such as 2000~3000MHz frequency bands have been widely proposed; and to realize the broadbandization of base station antennas, the first thing to face is to serve as its core The bandwidth expansion of the radiation unit of the component is a big challenge, how to maintain high gain, beam convergence consistency, good front-to-back ratio and high cross-polarization ratio in the entire broadband frequency band; especially the ultra-wideband problem, An oscillator that meets the requirements of high-frequency bands such as 5G and 4G (LTE) and an antenna made of the oscillator are problems that need to be solved urgently.
发明内容 Contents of the invention
本发明的目的在于克服以上所述的缺点,提供一种超宽辐射频率、良好的前后比以及高交叉极化特性的宽频带双极化振子。 The purpose of the present invention is to overcome the above-mentioned shortcomings, and provide a broadband dual-polarization vibrator with ultra-wide radiation frequency, good front-to-back ratio and high cross-polarization characteristics.
为实现上述目的,本发明的具体方案如下:宽频带双极化振子,包括有一支撑巴伦板,所述支撑巴伦板上设有两组、每组两个、呈正长方形的金属振子片;所述上下两个金属振子片为一组,用于辐射垂直极化信号,所述左右两个金属振子片为一组,用于辐射水平极化信号;所述上下两个金属振子片之间设有第一馈电带线,所述左右两个金属振子片之间设有第二馈电带线;所述支撑巴伦板上设有第一同轴电缆馈电孔,所述第一同轴电缆馈电孔与第一馈电带线电连接;所述支撑巴伦板上还设有第二同轴电缆馈电孔,所述第二同轴电缆馈电孔与第二馈电带线电连接; In order to achieve the above object, the specific solution of the present invention is as follows: the broadband dual-polarized vibrator includes a supporting balun plate, and the supporting balun plate is provided with two groups of metal vibrator pieces in a rectangular shape; The upper and lower metal oscillator pieces form a group for radiating vertically polarized signals, and the left and right metal oscillator pieces form a group for radiating horizontally polarized signals; between the upper and lower metal oscillator pieces A first feeding strip line is provided, and a second feeding strip line is provided between the left and right metal vibrator pieces; a first coaxial cable feeding hole is provided on the supporting balun board, and the first coaxial cable feeding hole is provided on the first The coaxial cable feeding hole is electrically connected with the first feeding strip line; the second coaxial cable feeding hole is also provided on the supporting balun board, and the second coaxial cable feeding hole is connected with the second feeding Wired electrical connection;
所述每个金属振子片的边缘设有外隔离圈,所述每个金属振子片上靠近两侧分别设有复数个并排设置的第一隔离阻断孔,所述每个金属振子片上的中部还设有复数个并排设置的第二隔离阻断孔,第二隔离阻断孔均为圆形;所述外隔离圈为半导体,所述第一隔离阻断孔以及第二隔离阻断孔内均填充设有半导体; The edge of each metal vibrator piece is provided with an outer isolation ring, and each metal vibrator piece is provided with a plurality of first isolation blocking holes arranged side by side near the two sides, and the middle part of each metal vibrator piece is also There are a plurality of second isolation and blocking holes arranged side by side, and the second isolation and blocking holes are all circular; the outer isolation ring is a semiconductor, and the inside of the first isolation and blocking holes and the second isolation and blocking holes are all circular. filled with semiconductors;
所述每个金属振子片远离支撑巴伦板的一侧设有用于整流的整流结构,所述整流结构为矩形,所述整流结构包括有复数个并排设置的整流槽,整流槽之间设有整流道;所述整流槽内也均填充设有半导体。 Each metal vibrator piece is provided with a rectification structure for rectification on the side away from the supporting balun plate. The rectification structure is rectangular, and the rectification structure includes a plurality of rectification grooves arranged side by side. rectification channels; the rectification grooves are also filled with semiconductors.
其中,所述第一隔离阻断孔为平行矩形;所述第一隔离阻断孔的上下边的长度均为4mm-7mm。 Wherein, the first isolation and blocking holes are parallel rectangles; the lengths of the upper and lower sides of the first isolation and blocking holes are both 4mm-7mm.
其中,所述半导体为砷化镓半导体。 Wherein, the semiconductor is gallium arsenide semiconductor.
其中,所述每个金属振子片的厚度为2mm-2.5mm。 Wherein, the thickness of each metal oscillator piece is 2mm-2.5mm.
其中,所述第一隔离阻断孔的数量为八个。 Wherein, the number of the first isolation and blocking holes is eight.
其中,所述第二隔离阻断孔的数量为五个。 Wherein, the number of the second isolation and blocking holes is five.
其中,所述第一同轴电缆馈电孔与第二同轴电缆馈电孔的距离大于4cm。 Wherein, the distance between the first coaxial cable feeding hole and the second coaxial cable feeding hole is greater than 4cm.
其中,所述支撑巴伦板为圆形;所述支撑巴伦板为PCB板,其直径为10cm。 Wherein, the supporting balun board is circular; the supporting balun board is a PCB board with a diameter of 10 cm.
其中,所述金属振子片的宽为6cm。 Wherein, the width of the metal vibrator piece is 6 cm.
本发明的有益效果为:通过优良的结构设计,创造性的将半导体运用到振子片上,将半导体结构与振子结合,通过不断的实验,设计长方形的金属振子片以及外围设有半导体圈,以及金属振子片上的结构设计,其辐射信号流在金属振子片流向长度和速度都得到较大改善,通过大量计算机软件的仿真得出其具有工作频带达到了3000MHz,完全满足4G以及下一代5G对频率要求标准,相对带宽达到65.9%,且其具有良好的增益、前后比、交叉极化比特性。 The beneficial effects of the present invention are: through excellent structural design, creatively apply the semiconductor to the vibrator piece, combine the semiconductor structure with the vibrator, and design a rectangular metal vibrator piece with a semiconductor ring on the periphery and a metal vibrator through continuous experiments. The on-chip structural design has greatly improved the length and speed of the radiation signal flow in the flow direction of the metal vibrator piece. Through a large number of computer software simulations, it has been found that its working frequency band has reached 3000MHz, which fully meets the frequency requirements of 4G and the next generation 5G. , the relative bandwidth reaches 65.9%, and it has good gain, front-to-back ratio, and cross-polarization ratio characteristics.
附图说明 Description of drawings
图1是本发明的俯视图; Fig. 1 is a top view of the present invention;
图2是图1的局部放大图; Figure 2 is a partially enlarged view of Figure 1;
图3是辐射信号在遇到整流机构的分流图; Figure 3 is a shunt diagram of the radiation signal when it encounters the rectification mechanism;
图4是本发明的剖面图; Fig. 4 is a sectional view of the present invention;
图5是本发明的带宽仿真实验数据图; Fig. 5 is the bandwidth emulation experiment data figure of the present invention;
图6是本发明的增益仿真实验数据图; Fig. 6 is the gain simulation experiment data figure of the present invention;
图1至图6中的附图标记说明: Explanation of reference numerals among Fig. 1 to Fig. 6:
1-支撑巴伦板;10-收敛缺口; 1-supporting balun plate; 10-convergence gap;
11-第一馈电带线;12-第二馈电带线; 11-the first feeder strip line; 12-the second feeder strip line;
11a-第一同轴电缆馈电;12a-第二同轴电缆馈电; 11a-the first coaxial cable feed; 12a-the second coaxial cable feed;
3-金属振子片; 3-Metal vibrator piece;
4-外隔离圈; 4-outer isolation ring;
5-整流结构;51-整流道; 5-rectification structure; 51-rectification channel;
6-第一隔离阻断孔; 6-the first isolation blocking hole;
7-第二隔离阻断孔; 7-the second isolation blocking hole;
9-阻扰孔。 9 - Barrier holes.
具体实施方式 Detailed ways
下面结合附图和具体实施例对本发明作进一步详细的说明,并不是把本发明的实施范围局限于此。 The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments, and the implementation scope of the present invention is not limited thereto.
如图1至图6所示,本实施例所述的宽频带双极化振子,包括有一支撑巴伦板1,所述支撑巴伦板1上设有两组、每组两个、呈长方形的金属振子片3;所述上下两个金属振子片3为一组,用于辐射垂直极化信号,所述左右两个金属振子片3为一组,用于辐射水平极化信号;所述上下两个金属振子片3之间设有第一馈电带线11,所述左右两个金属振子片3之间设有第二馈电带线12;所述支撑巴伦板1上设有第一同轴电缆馈电11a孔,所述第一同轴电缆馈电11a孔与第一馈电带线11电连接;所述支撑巴伦板1上还设有第二同轴电缆馈电12a孔,所述第二同轴电缆馈电12a孔与第二馈电带线12电连接;所述每个金属振子片3的边缘设有外隔离圈4,所述每个金属振子片3上靠近两侧分别设有复数个并排设置的第一隔离阻断孔6,所述每个金属振子片3上的中部还设有复数个并排设置的第二隔离阻断孔7,第二隔离阻断孔7均为圆形;所述外隔离圈4为半导体,所述第一隔离阻断孔6以及第二隔离阻断孔7内均填充设有半导体;所述每个金属振子片3远离支撑巴伦板1的一侧设有用于整流的整流结构5,所述整流结构5为矩形,所述整流结构5包括有复数个并排设置的整流槽,整流槽之间设有整流道51;所述整流槽内也均填充设有半导体。本实施例所述的宽频带双极化振子中,所述第一隔离阻断孔6为矩形;所述第一隔离阻断孔6的上下边的长度均为4mm-7mm。进一步的,第一同轴电缆馈电11a孔的同轴电缆与其馈电连接后,与第一馈电带线11连接实现馈电,同理,第二同轴电缆馈电12a孔的同轴电缆与其馈电连接后,与第二馈电带线12连接实现馈电,辐射电流分布式扩散,其信号走向通过第一隔离阻断孔6以及第二隔离阻断孔7后,其具备了较高的收敛性和超高增益以及超宽的频带,通过计算机软件仿真,其纵向增益达到了近13dBi;所述第二隔离阻断孔7均为圆形,通过计算机软件仿真得知,圆形的第二隔离阻断孔7能有效增加辐射信号流过时平稳性,相对与有棱角的结构更适合对辐射稳定性要求高的振子需要;通过大量计算机软件的仿真得出其具有工作频带达到了3000MHz,高于目前4G频率范围,所述信号扰流较大的情况下,其在金属振子片3远离支撑巴伦板1的一侧设有用于整流的整流结构5,所述整流结构5为矩形,所述整流结构5包括有复数个并排设置的整流槽,整流槽之间设有整流道51,经过整流通道,其具备了更加平稳的边缘辐射信号,通过计算机软件仿真得知,使其增益更加稳定,收敛比高,前后比突出的特点;所述每个金属振子片3的边缘设有外隔离圈4,所述外隔离圈4为半导体,外隔离圈4为半导体能有效增加振子隔离度,其通过计算机软件仿真得知,其隔离度达到50db,远高于普通振子,运用半导体的外隔离圈4,其还具备较优的波束收敛一致性。所述第一隔离阻断孔6以及第二隔离阻断孔7内均填充设有半导体,增加了增益性,进一步的增加了频率带宽,通过大量计算机软件的仿真得出其具有工作频带达到了近3000MHz;通过优良的结构设计,创造性的将半导体运用到振子片上,将半导体结构与振子结合,通过不断的实验,设计长方形金属振子片3以及外围设有半导体圈,以及金属振子片3上的结构设计,其辐射信号流在金属振子片3流向长度和速度都得到较大改善,通过大量计算机软件的仿真得出其具有工作频带达到了3000MHz,完全满足4G以及下一代5G对频率要求标准,相对带宽达到65.9%,且其具有良好的增益、前后比、交叉极化比特性。所述金属振子片3呈长方形,每个角为倒角结构,可在保持电流展宽更宽的情况下,保持振子片间的最大距离,增加其隔离性,增强振子件的抗干扰能力。 As shown in Figures 1 to 6, the broadband dual-polarized vibrator described in this embodiment includes a supporting balun plate 1, and two groups of supporting balun plates 1 are arranged on the supporting balun plate 1, each group is two, and is rectangular. The metal vibrator piece 3; the upper and lower metal vibrator pieces 3 form a group for radiating vertically polarized signals, and the left and right two metal vibrator pieces 3 form a group for radiating horizontally polarized signals; A first feeder strip line 11 is provided between the upper and lower metal oscillator pieces 3, and a second feeder belt line 12 is provided between the left and right metal oscillator pieces 3; the supporting balun board 1 is provided with The first coaxial cable feed 11a hole, the first coaxial cable feed 11a hole is electrically connected to the first feed strip line 11; the supporting balun board 1 is also provided with a second coaxial cable feed 12a hole, the second coaxial cable feeder 12a hole is electrically connected to the second feeder strip line 12; the edge of each metal vibrator piece 3 is provided with an outer isolation ring 4, and each metal vibrator piece 3 There are a plurality of first isolation blocking holes 6 arranged side by side on the top and near the two sides, and a plurality of second isolation blocking holes 7 arranged side by side are also provided in the middle of each metal vibrator piece 3. The second isolation The blocking holes 7 are all circular; the outer isolation ring 4 is a semiconductor, and the first isolation blocking hole 6 and the second isolation blocking hole 7 are filled with semiconductors; each metal vibrator piece 3 A rectification structure 5 for rectification is provided on the side away from the supporting balun plate 1. The rectification structure 5 is rectangular. The rectification structure 5 includes a plurality of rectification grooves arranged side by side, and rectification channels 51 are arranged between the rectification grooves. ; The rectifier grooves are also filled with semiconductors. In the broadband dual-polarized vibrator described in this embodiment, the first isolation and blocking hole 6 is rectangular; the lengths of the upper and lower sides of the first isolation and blocking hole 6 are both 4mm-7mm. Further, after the coaxial cable of the first coaxial cable feeder 11a hole is connected to its feeder, it is connected to the first feeder strip line 11 to realize the feeder. Similarly, the coaxial cable of the second coaxial cable feeder 12a hole After the cable is connected to its feeder, it is connected to the second feeder strip line 12 to realize the feeder, and the radiation current is distributed and diffused. After the signal direction passes through the first isolation blocking hole 6 and the second isolation blocking hole 7, it has Higher convergence, ultra-high gain and ultra-wide frequency band, through computer software simulation, its longitudinal gain has reached nearly 13dBi; the second isolation blocking hole 7 is circular, and it is known through computer software simulation that the circular The shape of the second isolation blocking hole 7 can effectively increase the stability of the radiation signal when it flows through. Compared with the angular structure, it is more suitable for the needs of the vibrator with high radiation stability requirements; through the simulation of a large number of computer software, it has a working frequency band up to 3000MHz, which is higher than the current 4G frequency range. In the case of a large signal disturbance, a rectification structure 5 for rectification is provided on the side of the metal vibrator plate 3 away from the supporting balun board 1. The rectification structure 5 It is rectangular, and the rectification structure 5 includes a plurality of rectification grooves arranged side by side, rectification channels 51 are arranged between the rectification grooves, and through the rectification channels, it has a more stable edge radiation signal, which is known through computer software simulation, so that The gain is more stable, the convergence ratio is high, and the front-to-back ratio is prominent; the edge of each metal vibrator piece 3 is provided with an outer isolation ring 4, and the outer isolation ring 4 is a semiconductor, and the outer isolation ring 4 is a semiconductor. Vibrator isolation, it is known through computer software simulation that its isolation reaches 50db, which is much higher than that of ordinary vibrator, and the outer isolation ring 4 of semiconductor is used, which also has better beam convergence consistency. Both the first isolation and blocking hole 6 and the second isolation and blocking hole 7 are filled with semiconductors, which increases the gain and further increases the frequency bandwidth. Through the simulation of a large number of computer software, it can be concluded that its working frequency band has reached Nearly 3000MHz; Through excellent structural design, creatively apply semiconductors to the vibrator piece, combine the semiconductor structure with the vibrator, and through continuous experiments, design a rectangular metal vibrator piece 3 and a semiconductor ring on the periphery, and the metal vibrator piece 3. Structural design, the length and speed of the radiation signal flow in the metal vibrator piece 3 have been greatly improved. Through a large number of computer software simulations, it has been found that its working frequency band has reached 3000MHz, which fully meets the frequency requirements of 4G and the next generation of 5G. The relative bandwidth reaches 65.9%, and it has good gain, front-to-back ratio, and cross-polar ratio characteristics. The metal vibrator piece 3 is in the shape of a rectangle, and each corner is a chamfered structure, which can maintain the maximum distance between the vibrator pieces while keeping the current wider, increase its isolation, and enhance the anti-interference ability of the vibrator piece.
本实施例所述的宽频带双极化振子中,所述半导体为砷化镓半导体;通过实验以及计算机软件仿真得知,砷化镓半导体的效果最佳,其优良的半导体特性增加了本发明的频带范围和提高了振子辐射稳定性。 In the wide-band dual-polarization vibrator described in this embodiment, the semiconductor is a gallium arsenide semiconductor; through experiments and computer software simulation, it is known that the effect of gallium arsenide semiconductor is the best, and its excellent semiconductor characteristics increase the efficiency of the present invention. The frequency band range and the stability of the vibrator radiation are improved.
本实施例所述的宽频带双极化振子中,所述每个金属振子片3的厚度为2mm-2.5mm;通过多次的仿真实验及结构设计调整,当金属振子片3的厚度为2mm-2.5mm时,其辐射电流最为平稳,辐射最为稳定,不易产生驻波等干扰波段,收敛性一致。 In the broadband dual-polarization vibrator described in this embodiment, the thickness of each metal vibrator piece 3 is 2mm-2.5mm; through multiple simulation experiments and structural design adjustments, when the thickness of the metal vibrator piece 3 is 2mm At -2.5mm, the radiation current is the most stable, the radiation is the most stable, it is not easy to generate standing waves and other interference bands, and the convergence is consistent.
所述第二隔离阻断孔7的直径为8mm;通过多次的仿真实验及结构设计调整,所述第二隔离阻断孔7的直径为8mm时,使其具有良好的增益扩展性,横向增益也接近6dBi。所述第一隔离阻断孔6的数量为八个;所述第二隔离阻断孔7的数量为五个,通过计算机仿真,此数量时,其效果更佳。 The diameter of the second isolation and blocking hole 7 is 8 mm; through multiple simulation experiments and structural design adjustments, when the diameter of the second isolation and blocking hole 7 is 8 mm, it has good gain expandability, and the horizontal The gain is also close to 6dBi. The number of the first isolation and blocking holes 6 is eight; the number of the second isolation and blocking holes 7 is five. Through computer simulation, the effect is better when this number is used.
所述第一同轴电缆馈电11a孔与第二同轴电缆馈电12a孔的距离大于4cm;所述支撑巴伦板1为圆形;所述支撑巴伦板1为PCB板,其直径为10cm;如此设计,通过计算机软件仿真得知,其隔离度更大。 The distance between the hole of the first coaxial cable feeding 11a and the hole of the second coaxial cable feeding 12a is greater than 4cm; the supporting balun board 1 is circular; the supporting balun board 1 is a PCB board with a diameter of It is 10cm; in this way, it is known through computer software simulation that its isolation is greater.
所述金属振子片3的每一条边长为6cm;当每一条边长为6cm时,其纵向长度正好为辐射波长的半波长度,因此其稳定性好,不产生杂波。 The length of each side of the metal oscillator piece 3 is 6 cm; when the length of each side is 6 cm, its longitudinal length is just the half-wave length of the radiation wavelength, so it has good stability and does not generate clutter.
本实施例所述的宽频带双极化振子中,所述两个相邻的第二隔离阻断孔7之间还设有复数个阻扰孔9,所述阻扰孔9内填充设有半导体;所述阻扰孔9能进一步增加扰流效果,增加带宽,通过计算机软件仿真得知,其能增加约3%带宽。 In the broadband dual-polarized vibrator described in this embodiment, a plurality of blocking holes 9 are provided between the two adjacent second isolation blocking holes 7, and the blocking holes 9 are filled with Semiconductor; the baffle hole 9 can further increase the turbulence effect and increase the bandwidth. It is known through computer software simulation that it can increase the bandwidth by about 3%.
本实施例所述的宽频带双极化振子中,所述外隔离圈4的靠近整流机构的一侧设有V形的收敛缺口10,其能有效增加收敛性和隔离度,通过计算机仿真,其表现有良好的收敛性。 In the broadband dual-polarized vibrator described in this embodiment, a V-shaped convergence gap 10 is provided on the side of the outer isolation ring 4 close to the rectification mechanism, which can effectively increase the convergence and isolation. Through computer simulation, Its performance has good convergence.
以上所述仅是本发明的一个较佳实施例,故凡依本发明专利申请范围所述的构造、特征及原理所做的等效变化或修饰,包含在本发明专利申请的保护范围内。 The above is only a preferred embodiment of the present invention, so all equivalent changes or modifications made according to the structure, features and principles described in the patent application scope of the present invention are included in the protection scope of the patent application of the present invention.
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