CN104134852A - Broadband dual-polarized oscillator - Google Patents
Broadband dual-polarized oscillator Download PDFInfo
- Publication number
- CN104134852A CN104134852A CN201410316603.2A CN201410316603A CN104134852A CN 104134852 A CN104134852 A CN 104134852A CN 201410316603 A CN201410316603 A CN 201410316603A CN 104134852 A CN104134852 A CN 104134852A
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- Prior art keywords
- hole
- metal oscillator
- broadband dual
- semiconductor
- isolation blocking
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 230000005855 radiation Effects 0.000 claims abstract description 17
- 238000002955 isolation Methods 0.000 claims description 42
- 230000010287 polarization Effects 0.000 claims description 22
- 230000009977 dual effect Effects 0.000 claims description 19
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000005388 cross polarization Methods 0.000 abstract description 5
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000004088 simulation Methods 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 7
- 238000005094 computer simulation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- Transducers For Ultrasonic Waves (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention discloses a broadband dual-polarized oscillator. With the adoption of an excellent structural design, a semiconductor is creatively adopted onto an oscillator piece, a semiconductor structure is combined with the oscillator, through continual tests, the rectangular metal oscillator piece is designed and a semiconductor ring is arranged at the periphery of the oscillator piece, with the adoption of the structural design on the metal oscillator piece, flow length and speed of radiation signal stream on the metal oscillator piece are greatly improved, the working frequency band of the broadband antenna reaches 3,000MHz through simulation of a large number of computer software, the standard of 4G (four-generation) on frequency requirement is completely satisfied, relative bandwidth reaches 65.9 percent, the broadband dual-polarized oscillator has favorable gain and characteristics of front-to-rear ratio and cross polarization ratio.
Description
Technical field
The present invention relates to field of antenna, be specifically related to a kind of broadband dual polarization vibrator.
Background technology
At present, 4G network is more and more universal, and 5G network has also appearred in some country; From the angle of operator, for reduce investment outlay and consider follow-uply how to realize extendible capacity, compatibility, multisystem, multi-modulation scheme coexists more and more becomes a kind of trend.So antenna for base station is also had higher requirement, for meeting the frequency of different systems, the ultrabroad band antenna for base station such as 2000 ~ 3000MHz frequency range are extensively proposed; And to realize the broadband of antenna for base station, what first will face is exactly the bandwidth expansion problem as the radiating element of its core component, how in the frequency band of whole broadband, keep higher gain, wave beam convergence consistency, good front and back when high cross polarization ratio be a no small challenge; Especially ultrabroad band problem, meets 5G and 4G(LTE) etc. the oscillator that requires of high band and the antenna made from this oscillator be all to need the problem that will solve badly.
Summary of the invention
The object of the invention is to overcome above-described shortcoming, provide a kind of super wide radiation frequency, good front and back than and the broadband dual polarization vibrator of high cross polarization characteristic.
For achieving the above object, concrete scheme of the present invention is as follows: broadband dual polarization vibrator, include a support Ba Lun plate, and described support Ba Lun plate is provided with two groups, every group two, is just rectangular metal oscillator sheet; Described upper and lower two metal oscillator sheets are one group, and for radiation perpendicular polarization signal, two of described left and right metal oscillator sheet is one group, for radiation level polarized signal; Between described upper and lower two metal oscillator sheets, be provided with the first feed band line, between the metal oscillator sheet of two of described left and right, be provided with the second feed band line; Described support Ba Lun plate is provided with the first coaxial cable feed hole, and described the first coaxial cable feed hole is electrically connected with the first feed band line; On described support Ba Lun plate, be also provided with the second coaxial cable feed hole, described the second coaxial cable feed hole is electrically connected with the second feed band line;
The edge of described each metal oscillator sheet is provided with outer cage ring, on described each metal oscillator sheet, be respectively equipped with a plurality of the first isolation blocking-up holes that are arranged side by side near both sides, middle part on described each metal oscillator sheet is also provided with a plurality of the second isolation blocking-up holes that are arranged side by side, and the second isolation blocking-up hole is circle; Described outer cage ring is semiconductor, in described the first isolation blocking-up hole and the second isolation blocking-up hole, all fills and is provided with semiconductor;
Described each metal oscillator sheet is provided with the rectifier structure for rectification away from a side that supports Ba Lun plate, and described rectifier structure is rectangle, and described rectifier structure includes a plurality of rectifier tanks that are arranged side by side, and is provided with rectification road between rectifier tank; In described rectifier tank, also all fill and be provided with semiconductor.
Wherein, described the first isolation blocking-up hole is Parallel Rectangular; The upper following length in described the first isolation blocking-up hole is 4mm-7mm.
Wherein, described semiconductor is gallium arsenide semiconductor.
Wherein, the thickness of described each metal oscillator sheet is 2mm-2.5mm.
Wherein, the quantity in described the first isolation blocking-up hole is eight.
Wherein, the quantity in described the second isolation blocking-up hole is five.
Wherein, the distance in described the first coaxial cable feed hole and the second coaxial cable feed hole is greater than 4cm.
Wherein, described support Ba Lun plate is circular; Described support Ba Lun plate is pcb board, and its diameter is 10cm.
Wherein, the wide of described metal oscillator sheet is 6cm.
Beneficial effect of the present invention is: by good structural design, creationary semiconductor is applied on oscillator sheet, semiconductor structure is combined with oscillator, by continuous experiment, design rectangular metal oscillator sheet and be arranged with semiconductor circle outward, and structural design on metal oscillator sheet, its radiation signal stream flows to length and speed is all greatly improved at metal oscillator sheet, show that by the emulation of a large amount of computer softwares it has working band and has reached 3000MHz, meet 4G and 5G of future generation completely to frequency requirement standard, relative bandwidth reaches 65.9%, and it has good gain, front and back ratio, cross polarization specific characteristic.
Brief description of the drawings
Fig. 1 is vertical view of the present invention;
Fig. 2 is the partial enlarged drawing of Fig. 1;
Fig. 3 is that radiation signal is running into point flow graph of rectification mechanism;
Fig. 4 is profile of the present invention;
Fig. 5 is bandwidth emulation experiment datagram of the present invention;
Fig. 6 is gain emulation experiment datagram of the present invention;
Description of reference numerals in Fig. 1 to Fig. 6:
1-supports Ba Lun plate; 10-restrains breach;
11-the first feed band line; 12-the second feed band line;
11a-the first coaxial cable feed; 12a-the second coaxial cable feed;
3-metal oscillator sheet;
The outer cage ring of 4-;
5-rectifier structure; 51-rectification road;
6-the first isolation blocking-up hole;
7-the second isolation blocking-up hole;
9-obstructs hole.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation, is not practical range of the present invention is confined to this.
As shown in Figures 1 to 6, the broadband dual polarization vibrator described in the present embodiment, includes a support Ba Lun plate 1, and described support Ba Lun plate 1 is provided with two groups, every group two, the metal oscillator sheet 3 that is rectangle; Described upper and lower two metal oscillator sheets 3 are one group, and for radiation perpendicular polarization signal, two of described left and right metal oscillator sheet 3 is one group, for radiation level polarized signal; Between described upper and lower two metal oscillator sheets 3, be provided with the first feed band line 11, between the metal oscillator sheet 3 of two of described left and right, be provided with the second feed band line 12; Described support Ba Lun plate 1 is provided with the first coaxial cable feed 11a hole, and described the first coaxial cable feed 11a hole is electrically connected with the first feed band line 11; On described support Ba Lun plate 1, be also provided with the second coaxial cable feed 12a hole, described the second coaxial cable feed 12a hole is electrically connected with the second feed band line 12; The edge of described each metal oscillator sheet 3 is provided with outer cage ring 4, on described each metal oscillator sheet 3, be respectively equipped with a plurality of the first isolation blocking-up holes 6 that are arranged side by side near both sides, middle part on described each metal oscillator sheet 3 is also provided with a plurality of 7, the second isolation blocking-up holes 7, the second isolation blocking-up hole that are arranged side by side and is circle; Described outer cage ring 4 is semiconductor, and described the first isolation blocking-up hole 6 and the second interior all fillings in isolation blocking-up hole 7 are provided with semiconductor; Described each metal oscillator sheet 3 is provided with the rectifier structure 5 for rectification away from a side that supports Ba Lun plate 1, and described rectifier structure 5 is rectangle, and described rectifier structure 5 includes a plurality of rectifier tanks that are arranged side by side, and is provided with rectification road 51 between rectifier tank; In described rectifier tank, also all fill and be provided with semiconductor.In broadband dual polarization vibrator described in the present embodiment, described the first isolation blocking-up hole 6 is rectangle; The upper following length in described the first isolation blocking-up hole 6 is 4mm-7mm.Further, after the coaxial cable in the first coaxial cable feed 11a hole is connected with its feed, be connected and realize feed with the first feed band line 11, in like manner, after the coaxial cable in the second coaxial cable feed 12a hole is connected with its feed, be connected and realize feed with the second feed band line 12, the distributed diffusion of radiation current, its signal trend is isolated behind blocking-up hole 7 by the first isolation blocking-up hole 6 and second, it has possessed higher convergence and superelevation gain and super wide frequency band, by emulation of the computer software, it longitudinally gains and has reached nearly 13dBi, described the second isolation blocking-up hole 7 is circle, learns by emulation of the computer software, stationarity while flowing through that the second circular isolation blocking-up hole 7 can effectively increase radiation signal, relatively with have the structure of corner angle to be more suitable for irradiation stability to require high oscillator needs, show that by the emulation of a large amount of computer softwares it has working band and has reached 3000MHz, higher than current 4G frequency range, in the larger situation of described signal flow-disturbing, it is provided with the rectifier structure 5 for rectification at metal oscillator sheet 3 away from a side that supports Ba Lun plate 1, described rectifier structure 5 is rectangle, described rectifier structure 5 includes a plurality of rectifier tanks that are arranged side by side, between rectifier tank, be provided with rectification road 51, through over commutation passage, it has possessed fringe radiation signal more stably, learn by emulation of the computer software, make its gain more stable, convergence ratio is high, front and back are than outstanding feature, the edge of described each metal oscillator sheet 3 is provided with outer cage ring 4, described outer cage ring 4 is semiconductor, outer cage ring 4 effectively increases oscillator isolation for semiconductor energy, it is learnt by emulation of the computer software, its isolation reaches 50db, far above common oscillator, use semi-conductive outer cage ring 4, it also possesses preferably wave beam convergence consistency.Described the first isolation blocking-up hole 6 and the second interior all fillings in isolation blocking-up hole 7 are provided with semiconductor, have increased gain, have further increased frequency bandwidth, show that by the emulation of a large amount of computer softwares it has working band and has reached nearly 3000MHz, by good structural design, creationary semiconductor is applied on oscillator sheet, semiconductor structure is combined with oscillator, by continuous experiment, design rectangle metal oscillator sheet 3 and be arranged with semiconductor circle outward, and structural design on metal oscillator sheet 3, its radiation signal stream flows to length and speed is all greatly improved at metal oscillator sheet 3, show that by the emulation of a large amount of computer softwares it has working band and has reached 3000MHz, meet 4G and 5G of future generation completely to frequency requirement standard, relative bandwidth reaches 65.9%, and it has good gain, front and back ratio, cross polarization specific characteristic.Described metal oscillator sheet 3 is rectangle, and each angle is chamfering structure, can, in the situation that keeping electric current broadening wider, keep the ultimate range between oscillator sheet, increases its isolation, strengthens the antijamming capability of oscillator part.
In broadband dual polarization vibrator described in the present embodiment, described semiconductor is gallium arsenide semiconductor; By experiment and emulation of the computer software learn, the best results of gallium arsenide semiconductor, its good characteristic of semiconductor has increased frequency band range of the present invention and has improved oscillator irradiation stability.
In broadband dual polarization vibrator described in the present embodiment, the thickness of described each metal oscillator sheet 3 is 2mm-2.5mm; By emulation experiment and structural design adjustment repeatedly, in the time that the thickness of metal oscillator sheet 3 is 2mm-2.5mm, its radiation current is the most steady, and radiation is the most stable, is difficult for producing the jammr bands such as standing wave, and convergence is consistent.
The diameter in described the second isolation blocking-up hole 7 is 8mm; By emulation experiment and structural design adjustment repeatedly, when the diameter in described the second isolation blocking-up hole 7 is 8mm, make it have good gain extension, laterally gain also approaches 6dBi.The quantity in described the first isolation blocking-up hole 6 is eight; The quantity in described the second isolation blocking-up hole 7 is five, and by Computer Simulation, when this quantity, its effect is better.
The distance in described the first coaxial cable feed 11a hole and the second coaxial cable feed 12a hole is greater than 4cm; Described support Ba Lun plate 1 is circular; Described support Ba Lun plate 1 is pcb board, and its diameter is 10cm; So design, learns by emulation of the computer software, and its isolation is larger.
Each length of side of described metal oscillator sheet 3 is 6cm; In the time that each length of side is 6cm, its longitudinal length is just in time the half-wave length of radiation wavelength, and therefore its good stability, does not produce clutter.
In broadband dual polarization vibrator described in the present embodiment, between described two adjacent the second isolation blocking-up holes 7, be also provided with a plurality of holes 9 that obstruct, described in obstruct the interior filling in hole 9 and be provided with semiconductor; The described hole 9 that obstructs can further increase flow-disturbing effect, increases bandwidth, learns by emulation of the computer software, and it can increase by approximately 3% bandwidth.
In broadband dual polarization vibrator described in the present embodiment, a side of the close rectification mechanism of described outer cage ring 4 is provided with the convergence breach 10 of V-arrangement, and it can effectively increase convergence and isolation, and by Computer Simulation, its performance has good convergence.
The above is only a preferred embodiment of the present invention, and the equivalence of doing according to structure, feature and principle described in patent claim of the present invention therefore all changes or modifies, and is included in the protection range of patent application of the present invention.
Claims (9)
1. a broadband dual polarization vibrator, includes a support Ba Lun plate (1), it is characterized in that: described support Ba Lun plate (1) is provided with two groups, every group two, is just rectangular metal oscillator sheet (3); Described upper and lower two metal oscillator sheets (3) are one group, and for radiation perpendicular polarization signal, two the metal oscillator sheets in described left and right (3) are one group, for radiation level polarized signal; Between described upper and lower two metal oscillator sheets (3), be provided with the first feed band line (11), between two the metal oscillator sheets in described left and right (3), be provided with the second feed band line (12); Described support Ba Lun plate (1) is provided with the first coaxial cable feed (11a) hole, and described the first coaxial cable feed (11a) hole is electrically connected with the first feed band line (11); On described support Ba Lun plate (1), be also provided with the second coaxial cable feed (12a) hole, described the second coaxial cable feed (12a) hole is electrically connected with the second feed band line (12);
The edge of described each metal oscillator sheet (3) is provided with outer cage ring (4), described each metal oscillator sheet (3) is upper is respectively equipped with a plurality of the first isolation blocking-up holes (6) that are arranged side by side near both sides, middle part on described each metal oscillator sheet (3) is also provided with a plurality of the second isolation blocking-up holes (7) that are arranged side by side, and the second isolation blocking-up hole (7) is circle; Described outer cage ring (4) is semiconductor, in described the first isolation blocking-up hole (6) and the second isolation blocking-up hole (7), all fills and is provided with semiconductor;
Described each metal oscillator sheet (3) is provided with the rectifier structure (5) for rectification away from a side that supports Ba Lun plate (1), described rectifier structure (5) is rectangle, described rectifier structure (5) includes a plurality of rectifier tanks that are arranged side by side, and is provided with rectification road (51) between rectifier tank; In described rectifier tank, also all fill and be provided with semiconductor.
2. a kind of broadband dual polarization vibrator according to claim 1, is characterized in that: described the first isolation blocking-up hole (6) is Parallel Rectangular; The upper following length in described the first isolation blocking-up hole (6) is 4mm-7mm.
3. a kind of broadband dual polarization vibrator according to claim 1, is characterized in that: described semiconductor is gallium arsenide semiconductor.
4. a kind of broadband dual polarization vibrator according to claim 1, is characterized in that: the thickness of described each metal oscillator sheet (3) is 2mm-2.5mm.
5. a kind of broadband dual polarization vibrator according to claim 1, is characterized in that: the quantity in described the first isolation blocking-up hole (6) is eight.
6. a kind of broadband dual polarization vibrator according to claim 1, is characterized in that: the quantity in described the second isolation blocking-up hole (7) is five.
7. a kind of broadband dual polarization vibrator according to claim 1, is characterized in that: the distance in described the first coaxial cable feed (11a) hole and the second coaxial cable feed (12a) hole is greater than 4cm.
8. a kind of broadband dual polarization vibrator according to claim 1, is characterized in that: described support Ba Lun plate (1) is for circular; Described support Ba Lun plate (1) is pcb board, and its diameter is 10cm.
9. a kind of broadband dual polarization vibrator according to claim 1, is characterized in that: the wide of described metal oscillator sheet (3) is 6cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410316603.2A CN104134852B (en) | 2014-07-06 | 2014-07-06 | Broadband dual polarization vibrator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410316603.2A CN104134852B (en) | 2014-07-06 | 2014-07-06 | Broadband dual polarization vibrator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104134852A true CN104134852A (en) | 2014-11-05 |
| CN104134852B CN104134852B (en) | 2016-08-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410316603.2A Expired - Fee Related CN104134852B (en) | 2014-07-06 | 2014-07-06 | Broadband dual polarization vibrator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104134852B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107196048A (en) * | 2017-06-05 | 2017-09-22 | 东莞质研工业设计服务有限公司 | Dual-polarized antenna |
| WO2018010408A1 (en) * | 2016-07-11 | 2018-01-18 | 胡洁维 | Smart geological monitoring base station |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1387688A (en) * | 1999-10-29 | 2002-12-25 | 奥根流动电话通讯公司 | Antenna device for transmitting and/or receiving RF waves |
| US20030201941A1 (en) * | 2002-04-26 | 2003-10-30 | Masayoshi Aikawa | Multi-element planar array antenna |
| US20120068892A1 (en) * | 2010-09-21 | 2012-03-22 | Victor Shtrom | Antenna with Dual Polarization and Mountable Antenna Elements |
| CN102437408A (en) * | 2011-08-26 | 2012-05-02 | 北京华力创通科技股份有限公司 | Octagonal flat-type array antenna |
| CN203983461U (en) * | 2014-07-06 | 2014-12-03 | 宁波镇海弘润磁材科技有限公司 | Broadband dual polarization vibrator |
-
2014
- 2014-07-06 CN CN201410316603.2A patent/CN104134852B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1387688A (en) * | 1999-10-29 | 2002-12-25 | 奥根流动电话通讯公司 | Antenna device for transmitting and/or receiving RF waves |
| US20030201941A1 (en) * | 2002-04-26 | 2003-10-30 | Masayoshi Aikawa | Multi-element planar array antenna |
| US20120068892A1 (en) * | 2010-09-21 | 2012-03-22 | Victor Shtrom | Antenna with Dual Polarization and Mountable Antenna Elements |
| CN102437408A (en) * | 2011-08-26 | 2012-05-02 | 北京华力创通科技股份有限公司 | Octagonal flat-type array antenna |
| CN203983461U (en) * | 2014-07-06 | 2014-12-03 | 宁波镇海弘润磁材科技有限公司 | Broadband dual polarization vibrator |
Non-Patent Citations (2)
| Title |
|---|
| TERO RANTA 等: ""Next-Generation CMOS-on-Insulator Multi-element Network For Broadband Antenna Tuning"", 《PROCEEDINGS OF THE 43RD EUROPEAN MICROWAVE CONFERENCE》, 10 October 2013 (2013-10-10), pages 1567 - 1570 * |
| 沈洁: ""第5代移动通信系统展望"", 《电信科学》, 20 September 2013 (2013-09-20), pages 99 - 107 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018010408A1 (en) * | 2016-07-11 | 2018-01-18 | 胡洁维 | Smart geological monitoring base station |
| CN107196048A (en) * | 2017-06-05 | 2017-09-22 | 东莞质研工业设计服务有限公司 | Dual-polarized antenna |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104134852B (en) | 2016-08-24 |
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Address after: 246003 Anhui province Anqing City Jianxin Street No. 2 East Annex 204 Applicant after: Hu Jiewei Address before: 246000 C District, Anqing science and Technology Plaza, Anhui Applicant before: Hu Jiewei |
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Inventor after: Zhai Qiang Inventor after: Gao Guomei Inventor after: Yang Xuejing Inventor after: Wang Shandong Inventor after: Zhang Xiaobin Inventor after: Shou Hongying Inventor after: Li Fengxian Inventor after: Liu Cong Inventor before: Hu Jiewei |
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Effective date of registration: 20160727 Address after: 250200 Ji'nan, Zhangqiu, new government district, Fu Fu Street, No. 603 Applicant after: ZHANGQIU POWER SUPPLY COMPANY, STATE GRID SHANDONG ELECTRIC POWER Co. Applicant after: State Grid Corporation of China Address before: 250200 Ji'nan, Zhangqiu, new government district, Fu Fu Street, No. 603 Applicant before: ZHANGQIU POWER SUPPLY COMPANY, STATE GRID SHANDONG ELECTRIC POWER Co. Effective date of registration: 20160727 Address after: 250200 Ji'nan, Zhangqiu, new government district, Fu Fu Street, No. 603 Applicant after: ZHANGQIU POWER SUPPLY COMPANY, STATE GRID SHANDONG ELECTRIC POWER Co. Address before: 246003 Anhui province Anqing City Jianxin Street No. 2 East Annex 204 Applicant before: Hu Jiewei |
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