CN104134850B - Dual polarization antenna - Google Patents
Dual polarization antenna Download PDFInfo
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- CN104134850B CN104134850B CN201410316601.3A CN201410316601A CN104134850B CN 104134850 B CN104134850 B CN 104134850B CN 201410316601 A CN201410316601 A CN 201410316601A CN 104134850 B CN104134850 B CN 104134850B
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- metal oscillator
- blocking aperture
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Abstract
The open a kind of dual polarization antenna of the present invention; By excellent structure design, design pentagon metal oscillator sheet and it is arranged with semi-conductor circle outward, and the structure design on metal oscillator sheet, its radiation signal stream flows to length and speed is all greatly improved at metal oscillator sheet, show that it has work frequency band and reaches nearly 3000MHz by the emulation of a large amount of computer software, meeting 4G completely to frequency requirement standard, relative bandwidth reaches 65.9%, and it has good gain, front and back ratio, cross polarization specific characteristic.
Description
Technical field
The present invention relates to field of antenna, it is specifically related to a kind of dual polarization antenna.
Background technology
At present, 4G network is more and more universal, and 5G network has also occurred in some country; From the angle of operator, for reduce investment outlay and consider follow-up how to realize extendible capacity, compatibility, multisystem, multi-standard coexist more and more becomes a kind of trend. So antenna for base station being it is also proposed higher requirement, for meeting the frequency of different systems, the ultrabroad band antenna for base station such as 2000 ~ 3000MHz frequency range are extensively proposed; And to be realized the broadband of antenna for base station, what first to be faced is exactly the bandwidth expansion problem of the radiating element as its core component, how in the frequency band of whole broadband, keep higher gain, wave beam convergence consistence, good front and back when high cross polarization ratio be a no small challenge; Especially ultrabroad band problem, meets 5G and 4G(LTE) oscillator of contour band requirement and the antenna that makes with this oscillator be all need the problem to be solved badly.
Summary of the invention
It is an object of the invention to overcome above-described shortcoming, it is provided that the dual polarization antenna of a kind of ultra-wide radiation frequency, good front and back ratio and high cross polarization characteristic.
For achieving the above object, the concrete scheme of the present invention is as follows: dual polarization antenna, include reflector, and the multiple radiating elements being located on reflector, described radiating element includes a support Ba Lun plate, and described support Ba Lun plate is provided with two groups, often organizes two, metal oscillator sheet in regular pentagon; Upper and lower two metal oscillator sheets are one group, and for radiating vertical polarization signal, two, left and right metal oscillator sheet is one group, for radiation level polarization signal; It is provided with the first feed strip line between upper and lower two metal oscillator sheets, between the metal oscillator sheet of two, left and right, it is provided with the 2nd feed strip line; Described support Ba Lun plate is provided with the first coaxial cable feed hole, and described first coaxial cable feed hole is electrically connected with the first feed strip line; Also being provided with the 2nd coaxial cable feed hole on described support Ba Lun plate, described 2nd coaxial cable feed hole is electrically connected with the 2nd feed strip line; The edge of each metal oscillator sheet described is provided with outer isolation circle, each metal oscillator sheet described is respectively equipped with multiple the first isolation blocking aperture being arranged side by side near both sides, middle part on each metal oscillator sheet described is also provided with multiple the 2nd isolation blocking aperture being arranged side by side, and the 2nd isolation blocking aperture is circle; Described outer isolation circle for semi-conductor, is all filled in described first isolation blocking aperture and the 2nd isolation blocking aperture and is provided with semi-conductor; Each metal oscillator sheet described is provided with the rectifier structure for rectification away from the side supporting Ba Lun plate, and described rectifier structure is trilateral, and described rectifier structure includes multiple rectification groove being arranged side by side, and is provided with rectification road between rectification groove; Also all fill in described rectification groove and it is provided with semi-conductor.
Wherein, described first isolation blocking aperture is parallelogram; The upper following length of described first isolation blocking aperture is 4mm-7mm.
Wherein, described semi-conductor is gallium arsenide semiconductor.
Wherein, the thickness of each metal oscillator sheet described is 2mm-2.5mm.
Wherein, the quantity of described first isolation blocking aperture is six.
Wherein, the quantity of described 2nd isolation blocking aperture is five.
Wherein, the distance in described first coaxial cable feed hole and the 2nd coaxial cable feed hole is greater than 4cm.
Wherein, described support Ba Lun plate is circular; Described support Ba Lun plate is pcb board, and its diameter is 10cm.
Wherein, each the length of side of described metal oscillator sheet is 6cm.
The useful effect of the present invention is: by excellent structure design, creative applies on oscillator sheet by semi-conductor, semiconductor structure is combined with oscillator, by continuous experiment, design pentagon metal oscillator sheet and it is arranged with semi-conductor circle outward, and the structure design on metal oscillator sheet, its radiation signal stream flows to length and speed is all greatly improved at metal oscillator sheet, show that it has work frequency band and reaches 3000MHz by the emulation of a large amount of computer software, meet 4G and 5G of future generation completely to frequency requirement standard, relative bandwidth reaches 65.9%, and it has good gain, front and back ratio, cross polarization specific characteristic.
Accompanying drawing explanation
Fig. 1 is the vertical view of the radiating element of the present invention;
Fig. 2 is the partial enlargement figure of Fig. 1;
Fig. 3 is that radiation signal is running into the shunting figure of rectification mechanism;
Fig. 4 is the sectional view of the radiating element of the present invention;
Fig. 5 is the bandwidth emulation experiment data plot of the present invention;
Fig. 6 is the gain emulation experiment data plot of the present invention;
Fig. 7 is the vertical view of the present invention;
Description of reference numerals in Fig. 1 to Fig. 7: 1-supports Ba Lun plate; 10-restrains breach; 2-reflector; 11-first feed strip line; 12-the 2nd feed strip line; 11a-first coaxial cable feed; 12a-the 2nd coaxial cable feed; 3-metal oscillator sheet; Circle is isolated outside 4-; 5-rectifier structure; 51-rectification road; 6-first isolates blocking aperture; 7-the 2nd isolates blocking aperture; 9-obstructs hole.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation, is not that the practical range of the present invention is confined to this.
As shown in Figures 1 to 7, dual polarization antenna described in the present embodiment, includes reflector 2, and the multiple radiating elements being located on reflector, described radiating element includes a support Ba Lun plate 1, and described support Ba Lun plate 1 is provided with two groups, often organizes two, metal oscillator sheet 3 in regular pentagon, upper and lower two metal oscillator sheets 3 are one group, and for radiating vertical polarization signal, two, left and right metal oscillator sheet 3 is one group, for radiation level polarization signal, it is provided with the first feed strip line 11 between upper and lower two metal oscillator sheets 3, between the metal oscillator sheet 3 of two, left and right, it is provided with the 2nd feed strip line 12, described support Ba Lun plate 1 is provided with the first coaxial cable feed 11a hole, and described first coaxial cable feed 11a hole is electrically connected with the first feed strip line 11, also being provided with the 2nd coaxial cable feed 12a hole on described support Ba Lun plate 1, described 2nd coaxial cable feed 12a hole is electrically connected with the 2nd feed strip line 12, the edge of each metal oscillator sheet 3 described is provided with outer isolation circle 4, each metal oscillator sheet 3 described is respectively equipped with multiple the first isolation blocking aperture 6 being arranged side by side near both sides, middle part on each metal oscillator sheet 3 described is also provided with multiple the 2nd isolation blocking aperture the 7, two isolation blocking aperture 7 being arranged side by side and is circle, described outer isolation circle 4 be semi-conductor, and in described first isolation blocking aperture 6 and the 2nd isolation blocking aperture 7, all filling is provided with semi-conductor, each metal oscillator sheet 3 described is provided with the rectifier structure 5 for rectification away from the side supporting Ba Lun plate 1, and described rectifier structure 5 is trilateral, and described rectifier structure 5 includes multiple rectification groove being arranged side by side, and is provided with rectification road 51 between rectification groove, also all fill in described rectification groove and it is provided with semi-conductor. in dual polarization antenna described in the present embodiment, described first isolation blocking aperture 6 is parallelogram, the upper following length of described first isolation blocking aperture 6 is 4mm-7mm. further, after the concentric cable in the first coaxial cable feed 11a hole is connected with its feed, it is connected with the first feed strip line 11 and realizes feed, with reason, after the concentric cable in the 2nd coaxial cable feed 12a hole is connected with its feed, it is connected with the 2nd feed strip line 12 and realizes feed, radiation electric flow point cloth spreads, its signal trend is by after the first isolation blocking aperture 6 and the 2nd isolation blocking aperture 7, it has possessed higher convergency and superelevation gain and ultra-wide band, by emulation of the computer software, its longitudinal gain reaches nearly 13dBi, described 2nd isolation blocking aperture 7 is circle so that it is having good gain extension, horizontal gain is also close to 6dBi, being learnt by emulation of the computer software, the 2nd circular isolation blocking aperture 7 can effectively increase stationarity when radiation signal flows through, relatively with have the structure of corner angle to be more suitable for irradiation stability requires high oscillator needs, show that it has work frequency band and reaches 3000MHz by the emulation of a large amount of computer software, far above current 4G range of frequency, when described signal flow-disturbing is bigger, it is provided with the rectifier structure 5 for rectification at metal oscillator sheet 3 away from the side supporting Ba Lun plate 1, described rectifier structure 5 is trilateral, described rectifier structure 5 includes multiple rectification groove being arranged side by side, rectification road 51 it is provided with between rectification groove, through overcommutation passage, it has possessed fringe radiation signal more stably, learnt by emulation of the computer software, make its gain more stable, convergence is than high, front and back are than outstanding feature, the edge of each metal oscillator sheet 3 described is provided with outer isolation circle 4, described outer isolation circle 4 is semi-conductor, outer isolation circle 4 effectively increases oscillator isolation for semiconductor energy, it is learnt by emulation of the computer software, its isolation reaches 50db, far above common oscillator, using the outer isolation circle 4 of semi-conductor, it also possesses preferably wave beam convergence consistence.Described first isolation blocking aperture 6 and the 2nd isolation blocking aperture 7 in all fill be provided with semi-conductor, add incremental, further adds frequency bandwidth, show that it has work frequency band and reaches nearly 3000MHz by the emulation of a large amount of computer software, by excellent structure design, creative applies on oscillator sheet by semi-conductor, semiconductor structure is combined with oscillator, by continuous experiment, design pentagon metal oscillator sheet 3 and it is arranged with semi-conductor circle outward, and the structure design on metal oscillator sheet 3, its radiation signal stream flows to length and speed is all greatly improved at metal oscillator sheet 3, show that it has work frequency band and reaches 3000MHz by the emulation of a large amount of computer software, meet 4G and 5G of future generation completely to frequency requirement standard, relative bandwidth reaches 65.9%, and it has good gain, front and back ratio, cross polarization specific characteristic. described metal oscillator sheet 3, can when keeping maximum oscillator sheet spacing in regular pentagon so that it is electric current exhibition width is wider, increases its frequency response characteristic, increases bandwidth.
In dual polarization antenna described in the present embodiment, described semi-conductor is gallium arsenide semiconductor; By experiment and emulation of the computer software learn, the best results of gallium arsenide semiconductor, its excellent characteristic of semiconductor adds the frequency band range of the present invention and improves element radiates stability.
In dual polarization antenna described in the present embodiment, the thickness of each metal oscillator sheet 3 described is 2mm-2.5mm; Being adjusted by emulation experiment repeatedly and structure design, when the thickness of metal oscillator sheet 3 is 2mm-2.5mm, its radiation electric current is the most steady, radiates the most stable, not easily produces the interference wave bands such as standing wave, and convergency is consistent.
The diameter of described 2nd isolation blocking aperture 7 is 8mm; Adjusted by emulation experiment repeatedly and structure design, when the diameter of described 2nd isolation blocking aperture 7 is 8mm so that it is having good gain extension, horizontal gain is also close to 6dBi. The quantity of described first isolation blocking aperture 6 is six; The quantity of described 2nd isolation blocking aperture 7 is five, and by Computer Simulation, during this quantity, its effect is better.
The distance in described first coaxial cable feed 11a hole and the 2nd coaxial cable feed 12a hole is greater than 4cm; Described support Ba Lun plate 1 is circular; Described support Ba Lun plate 1 is pcb board, and its diameter is 10cm; So design, is learnt by emulation of the computer software, and its isolation is bigger.
Each the length of side of described metal oscillator sheet 3 is 6cm; When each the length of side is 6cm, its longitudinal length is just the half-wave length of radiation wavelength, therefore its good stability, does not produce clutter.
In dual polarization antenna described in the present embodiment, be also provided with between described two adjacent two isolation blocking aperture 7 and multiple obstruct hole 9, described in obstruct to fill in hole 9 and be provided with semi-conductor; The described hole 9 that obstructs can increase flow-disturbing effect further, increases bandwidth, is learnt by emulation of the computer software, and it can increase about 3% bandwidth.
In dual polarization antenna described in the present embodiment, the both sides of the close rectification mechanism of described outer isolation circle 4 are provided with the convergence breach 10 of V shape, and it can effectively increase convergency and isolation, and by Computer Simulation, its performance has good convergency.
The above is only a better embodiment of the present invention, therefore all equivalences done according to the structure described in patent application scope of the present invention, feature and principle change or modify, and are included in the protection domain of patent application of the present invention.
Claims (7)
1. a dual polarization antenna, include reflector (2), and the multiple radiating elements being located on reflector, described radiating element includes support Ba Lun plate (1), it is characterised in that: described support Ba Lun plate (1) is provided with two groups, often organizes two, metal oscillator sheet (3) in regular pentagon; Upper and lower two metals oscillator sheet (3) are one group, and for radiating vertical polarization signal, two, left and right metal oscillator sheet (3) is one group, for radiation level polarization signal; It is provided with the first feed strip line (11) between upper and lower two metals oscillator sheet (3), between metal oscillator sheet (3) of two, left and right, it is provided with the 2nd feed strip line (12); Described support Ba Lun plate (1) is provided with the first coaxial cable feed (11a) hole, and described first coaxial cable feed (11a) hole is electrically connected with the first feed strip line (11); Described support Ba Lun plate (1) is also provided with the 2nd coaxial cable feed (12a) hole, described 2nd coaxial cable feed (12a) Kong Yu bis-feed strip line (12) electrical connection; The edge of each metal oscillator sheet (3) described is provided with outer isolation circle (4), each metal oscillator sheet (3) described is upper is respectively equipped with multiple the first isolation blocking aperture (6) being arranged side by side near both sides, middle part on each metal oscillator sheet (3) described is also provided with multiple the 2nd isolation blocking aperture (7) being arranged side by side, and the 2nd isolation blocking aperture (7) is circle; Described outer isolation circle (4) is semi-conductor, all fills and be provided with semi-conductor in described first isolation blocking aperture (6) and the 2nd isolation blocking aperture (7); Each metal oscillator sheet (3) described is provided with the rectifier structure for rectification (5) away from the side supporting Ba Lun plate (1), described rectifier structure (5) is trilateral, described rectifier structure (5) includes multiple rectification groove being arranged side by side, and is provided with rectification road (51) between rectification groove; Also all fill in described rectification groove and it is provided with semi-conductor;
The thickness of each metal oscillator sheet (3) described is 2mm-2.5mm; The quantity of described first isolation blocking aperture (6) is six.
2. a kind of dual polarization antenna according to claim 1, it is characterised in that: described first isolation blocking aperture (6) is parallelogram; The upper following length of described first isolation blocking aperture (6) is 4mm-7mm.
3. a kind of dual polarization antenna according to claim 1, it is characterised in that: described semi-conductor is gallium arsenide semiconductor.
4. a kind of dual polarization antenna according to claim 1, it is characterised in that: the quantity of described 2nd isolation blocking aperture (7) is five.
5. a kind of dual polarization antenna according to claim 1, it is characterised in that: the distance in described first coaxial cable feed (11a) Kong Yu bis-coaxial cable feed (12a) hole is greater than 4cm.
6. a kind of dual polarization antenna according to claim 1, it is characterised in that: described support Ba Lun plate (1) is circular; Described support Ba Lun plate (1) is pcb board, and its diameter is 10cm.
7. a kind of dual polarization antenna according to claim 1, it is characterised in that: each the length of side of described metal oscillator sheet (3) is 6cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410316601.3A CN104134850B (en) | 2014-07-06 | 2014-07-06 | Dual polarization antenna |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410316601.3A CN104134850B (en) | 2014-07-06 | 2014-07-06 | Dual polarization antenna |
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| CN104134850A CN104134850A (en) | 2014-11-05 |
| CN104134850B true CN104134850B (en) | 2016-06-01 |
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| CN105680161A (en) * | 2016-01-19 | 2016-06-15 | 李万 | Bipolar microstrip oscillator with isolation strip |
| CN105703067A (en) * | 2016-01-19 | 2016-06-22 | 李万 | Antenna |
| CN105609938A (en) * | 2016-01-19 | 2016-05-25 | 李万 | Broadband antenna |
| CN105811304A (en) * | 2016-04-22 | 2016-07-27 | 李万 | Hot source detection power network inspection device |
| CN105914643A (en) * | 2016-04-22 | 2016-08-31 | 李万 | Power network patrol inspection device capable of recording information |
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| KR0140601B1 (en) * | 1995-03-31 | 1998-07-01 | 배순훈 | Polarization receiver |
| CN101552375A (en) * | 2009-05-14 | 2009-10-07 | 关淇 | Low intermodulation printed circuit boards antenna |
| JP5252513B2 (en) * | 2010-08-31 | 2013-07-31 | カシオ計算機株式会社 | Multi-frequency circularly polarized antenna |
| CN204118237U (en) * | 2014-07-06 | 2015-01-21 | 胡洁维 | Dual polarized antenna |
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Address after: 246003 Anhui province Anqing City Jianxin Street No. 2 East Annex 204 Applicant after: Hu Jiewei Address before: 246000 C District, Anqing science and Technology Plaza, Anhui Applicant before: Hu Jiewei |
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Inventor after: Chen Youxian Inventor before: Hu Jiewei |
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Effective date of registration: 20160503 Address after: Baini town Sanshui District of Guangdong city in Foshan province 528000 poly Jin Road No. 23 Applicant after: FOSHAN DILONG COMMUNICATION EQUIPMENT CO., LTD. Address before: 246003 Anhui province Anqing City Jianxin Street No. 2 East Annex 204 Applicant before: Hu Jiewei |
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