CN104134596A - Absorption cavity device restraining double-interval coupling cavity 2 pi mode oscillation and debugging method of absorption cavity device - Google Patents
Absorption cavity device restraining double-interval coupling cavity 2 pi mode oscillation and debugging method of absorption cavity device Download PDFInfo
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- CN104134596A CN104134596A CN201410379750.4A CN201410379750A CN104134596A CN 104134596 A CN104134596 A CN 104134596A CN 201410379750 A CN201410379750 A CN 201410379750A CN 104134596 A CN104134596 A CN 104134596A
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Abstract
The invention provides an absorption cavity device restraining double-interval coupling cavity 2 pi mode oscillation. A double-tuned absorbing cavity of the high absorption cavity device is in resonance oscillation in a TM110 mode and a TM210 mode at the same time and is connected to a double-interval coupling cavity through coupling waveguides. Oscillation of two non-working modes with 2 pi mode field distribution in an output circuit of the double-interval coupling cavity can be effectively restrained, instability, caused by the oscillation, of a multiple-beam klystron can be eliminated, and the noise spectrum level can be reduced.
Description
Technical field
The present invention relates to electron trade electric vacuum technology field, relate in particular to a kind of absorbing cavity device that suppresses gap coupled cavity 2 pi-mode oscillations.
Background technology
In order to expand the bandwidth of multiple-beam klystron, conventionally adopt gap coupled cavity as Broadband emission circuit.Between two resonant cavitys due to gap coupled cavity output circuit, there is internal feedback,, can cause non-operating mode vibration under certain condition, cause multiple-beam klystron beam current and Beam transmission to decline, cause multiple-beam klystron sparking.In addition, under high frequency pumping, due to the existence of electron beam velocity variations or reverse on a small quantity electronics and secondary electron, to encourage other non-operating mode, form assorted spectrum, reduced the quality of output spectrum, cause the sparking of transmitter output waveguide and disturb other microwave electron system.Therefore, suppress the vibration of multiple-beam klystron non-operating mode to improving multiple-beam klystron performance, guarantee output spectrum weight and job stability, it is normally worked in microwave electron system, significant.
For operating frequency, be the multiple-beam klystron of low-frequency range (L and S-band), conventionally adopt the gap coupled cavity output circuit that is operated in π mould.Research and analyse with actual tubulation and show, this output circuit easily produces the non-operating mode vibration that field distribution is 2 π mode structures.The assorted spectrum producing in order to suppress the vibration of such non-operating mode, an external absorbing cavity on gap coupled cavity conventionally, this absorbing cavity is coupled by coupling aperture and gap coupled cavity, and suppressing the shape that resonance frequency is slightly higher than mode of operation is the TM of 2 π moulds
010the vibration of pattern.And actual tubulation work shows, resonance frequency is higher, and a shape is the TM of 2 π moulds
110pattern also can produce vibration under given conditions, and this vibration can have a strong impact on the stability of multiple-beam klystron DC state work equally.
Summary of the invention
(1) technical problem that will solve
In view of above-mentioned technical problem, the invention provides a kind of absorbing cavity device and adjustment method thereof that suppresses gap coupled cavity 2 pi-mode oscillations, to suppress the non-operating mode in gap coupled cavity.
(2) technical scheme
The absorbing cavity device that the present invention suppresses 2 pi-mode oscillations in gap coupled cavity comprises: double tunning absorbing cavity is hollow, rectangular sealing resonant cavity, its first end sealing, and at least part of area of its inner side chamber wall has microwave attenuation material; Rectangle coupled waveguide, is connected between second end and described gap coupled cavity of described double tunning absorbing cavity, over against the coupling slot of described gap coupled cavity one side, for the Mode Coupling between described double tunning absorbing cavity and gap coupled cavity.Wherein, two screws are offered in described double tunning absorbing cavity top, by these two screws, in described double tunning absorbing cavity, insert vertically downward the first tuning screw and second tune screw respectively, wherein, these two screws are all positioned at the center of described double tunning absorbing cavity broadside, make this double tunning absorbing cavity while resonance in TM
110pattern and TM
210pattern.
(3) beneficial effect
From technique scheme, can find out, absorbing cavity device and modulator approach thereof that the present invention suppresses 2 pi-mode oscillations in gap coupled cavity have following beneficial effect:
(1) double tunning absorbing cavity simultaneously resonance in TM
110pattern and TM
210pattern, it is connected to gap coupled cavity by coupled waveguide, thereby can effectively suppress to have in gap coupled cavity output circuit the vibration of two non-operating modes of 2 π mould field shapes distributions, eliminate the unsteadiness of the multiple-beam klystron being caused by such vibration, reduce sundry spectrum level simultaneously;
(2) two non-operating modes loadings that can simultaneously distribute to thering are 2 π mould field shapes, and it is very little to thering is the loading of the mode of operation that π mould field shape distributes, can guarantee when suppressing non-operating mode vibration, very little to the efficiency of multiple-beam klystron and power-frequency range properties influence;
(3) attenuating material coating and sintering are at absorbing cavity inner surface, and good heat dissipation, gives vent to anger little;
(4) volume is little, and preparation and assembly technology are simple.
Accompanying drawing explanation
Fig. 1 suppresses the longitudinal sectional view of the absorbing cavity device of double-gap coupling cavity of multiple-beam klystron 2 pi-mode oscillations according to the embodiment of the present invention;
Fig. 2 A is the longitudinal sectional view after absorbing cavity device shown in Fig. 1 and double-gap coupling cavity of multiple-beam klystron assembling;
Fig. 2 B is the transverse sectional view after absorbing cavity device shown in Fig. 1 and double-gap coupling cavity of multiple-beam klystron assembling.
[main element of the present invention]
100-absorbing cavity device;
110-double tunning absorbing cavity;
111-cavity; 112-chamber lid;
113-microwave attenuation material; 114-the first tuning screw;
115-second tune screw;
120-rectangle coupled waveguide;
121-the first rectangular waveguide hole; 122-the second rectangular waveguide hole;
200-double-gap coupling cavity of multiple-beam klystron;
210-cavity;
211-positioning step;
220-upper chamber cover;
230-cavity of resorption lid;
240-coupling iris;
241,242-coupling slot; 243-coupling loop;
244-exports rectangular waveguide.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.It should be noted that, in accompanying drawing or specification description, similar or identical part is all used identical figure number.The implementation that does not illustrate in accompanying drawing or describe is form known to a person of ordinary skill in the art in affiliated technical field.In addition, although the demonstration of the parameter that comprises particular value can be provided herein, should be appreciated that, parameter is without definitely equaling corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value.The direction term of mentioning in embodiment, such as " on ", D score, 'fornt', 'back', " left side ", " right side " etc., be only the direction with reference to accompanying drawing.Therefore, the direction term of use is to be not used for limiting the scope of the invention for explanation.
The present invention suppresses the device of double-gap coupling cavity of multiple-beam klystron 2 pi-mode oscillations, can effectively suppress to have in double-gap coupling cavity of multiple-beam klystron output circuit the vibration of two non-operating modes of 2 π mould field shapes distributions, the unsteadiness of the multiple-beam klystron that elimination is caused by such vibration reduces sundry spectrum level simultaneously.
In one exemplary embodiment of the present invention, provide a kind of generalized section that suppresses the absorbing cavity device of double-gap coupling cavity of multiple-beam klystron 2 pi-mode oscillations.Fig. 1 suppresses the generalized section of the device of double-gap coupling cavity of multiple-beam klystron 2 pi-mode oscillations according to the embodiment of the present invention.
As shown in Figure 1, the present embodiment absorbing cavity device 100 comprises: double tunning absorbing cavity 110 is the rectangular cavity of hollow; Rectangle coupled waveguide 120, be connected between double tunning absorbing cavity 110 and double-gap coupling cavity of multiple-beam klystron 200, over against the coupling slot of described double-gap coupling cavity of multiple-beam klystron 200 1 sides, for the Mode Coupling between double tunning absorbing cavity 110 and double-gap coupling cavity of multiple-beam klystron.Wherein, double tunning absorbing cavity 110 simultaneously resonance in TM
110pattern and TM
210pattern.
In the present embodiment, 110 while of double tunning absorbing cavity, resonance was at TM
110pattern and TM
210pattern, can suppress to have in double-gap coupling cavity of multiple-beam klystron 200 vibration of two non-operating modes of 2 π mould field shapes distributions effectively, eliminates the unsteadiness of the multiple-beam klystron being caused by such vibration, reduces sundry spectrum level simultaneously.
Below each part of the present embodiment absorbing cavity device 100 and gap coupled cavity 200 is elaborated.
Please refer to Fig. 1, double tunning absorbing cavity 110 comprises: cavity 111 and chamber lid 112.This cavity 111 and the common rectangular cavity that forms hollow of chamber lid 111.
It should be noted that, the size of this rectangular cavity is relevant with the frequency that double-gap coupling cavity of multiple-beam klystron need to absorb two non-operating modes.Those skilled in the art can be according to the difference of the frequency of work, the length and width high parameter of this rectangular cavity of rice design, no longer explanation herein.
Coating sintering microwave attenuation material 113 on the blind end of cavity 112 of the chamber of double tunning absorbing cavity lid 111 and double tunning absorbing cavity and the chamber wall of the surrounded surface of close blind end one side.Microwave attenuation material 113 is FeSiAl attenuating material.Certainly the present invention also can adopt the attenuating material of other types, if its meet relative dielectric constant δ, loss tangent Δ meets: 20≤δ≤25,0.6≤Δ≤0.8.The length L s that applies microwave attenuation material along the long limit of double tunning absorbing cavity meets with the ratio of the length L on the long limit of double tunning absorbing cavity: 0.6≤L
s/ L≤0.8.
It should be noted that, the area of coating sintering microwave attenuation material 113 is the bigger the better, but the main mould of microwave attenuation Effect of Materials for fear of coupling aperture position between double tunning absorbing cavity 110 and gap coupled cavity 200, in the present embodiment, only the part position of double tunning absorbing cavity 110 has been applied to microwave attenuation material 113.In addition it will be apparent to those skilled in the art that as long as the part area of this double tunning absorbing cavity 110 applies this microwave attenuation material, and needn't leave no choice but strictly meet region and the area of mentioning in the present embodiment.
Fig. 2 A is the longitudinal sectional view after the present embodiment absorbing cavity device and double-gap coupling cavity of multiple-beam klystron assembling.Fig. 2 B is the transverse sectional view after absorbing cavity device shown in Fig. 1 and double-gap coupling cavity of multiple-beam klystron assembling.Below in conjunction with Fig. 2 A and Fig. 2 B, introduce shape and the structure of coupled waveguide 120.
As shown in Figure 2 A and 2 B, the position corresponding with coupling slot, the right side of double-gap coupling cavity of multiple-beam klystron 200 has the second rectangular waveguide hole 122, this second rectangular waveguide hole 122 is along the lateral direction towards double-gap coupling cavity of multiple-beam klystron 200, and the width of broadside increases gradually.This second rectangular waveguide hole 122 forms the left side rectangular waveguide part of rectangle coupled waveguide 120.
As shown in Figure 2 A and 2 B, the sealing of the right side of double tunning absorbing cavity 110, left side has the first rectangular waveguide hole 121 over against the position of the second rectangular waveguide hole 122.The width value W of these the first rectangular waveguide hole 111 broadsides is constant, equals the width value of second rectangular waveguide hole the widest part broadside, and this width value W meets and double-gap coupling cavity of multiple-beam klystron 200 operation wavelength λ
0ratio W/ λ
0should be less than 0.4.
After by the present embodiment absorbing cavity device 100 and double-gap coupling cavity of multiple-beam klystron 200 assemblings, the first rectangular waveguide hole 121 and the second rectangular waveguide hole 122 are aimed at, and its periphery is sealed and matched, the rectangle coupled waveguide 120 of formation.
In the present embodiment, based on desired degree of coupling parameter, the width of double-gap coupling cavity of multiple-beam klystron right side the second rectangular waveguide hole 122 broadsides toward the outer side width increases gradually.The size that it will be understood by those skilled in the art that this rectangular waveguide hole is relevant with the degree of coupling, and width is larger, and the degree of coupling is larger, and considers the dimensional requirement of whole multiple-beam klystron, and this width can only be accomplished in limited range large as far as possible.And require width W and double-gap coupling cavity of multiple-beam klystron 200 operation wavelength λ
0ratio W/ λ
0should be less than 0.4, be to avoid other Mode Coupling to go out gap coupled cavity.
In addition, the height d of the first rectangular waveguide hole 121 and the second rectangular waveguide hole 122 remains constant, the height d of the coupling slot of this height d and double-gap coupling cavity of multiple-beam klystron 30
cratio d/d
cbetween 0.5～0.65.
On double tunning absorbing cavity chamber lid 112, have two screws, by these two screws, in double tunning absorbing cavity, insert the first tuning screw 114 and second tune screw 115 respectively.
The first tuning screw 113 and second tune screw 114 are all positioned at the center of double tunning absorbing cavity broadside (vertical double tunning absorbing cavity axis direction), and both drop on the horizontal line through above-mentioned the first rectangular waveguide hole 121 centers in the projection of horizontal plane.
For the first tuning screw 114, it is positioned near the center on the long limit of double tunning absorbing cavity (being parallel to double tunning absorbing cavity axis direction), and in the present embodiment, the first tuning screw 114 and described double tunning absorbing cavity be the distance L of blind end not
1, diameter D
1meet: 0.28L≤D
1≤ 0.36L, 0.4L≤L
1≤ 0.45L, wherein, L is the length on the long limit of rectangular cavity.
This first tuning screw 114 is finely tuned the interior TM of double tunning absorbing cavity 110 by capacitance tuning
110the resonance frequency of pattern, makes to have 2 π mould field shape distribution non-operating mode TM in itself and gap coupled cavity 110
010mould resonance.
For second tune screw 115, it is positioned near 3/4 place on the long limit of double tunning absorbing cavity, and in the present embodiment, second tune screw 115 and double tunning absorbing cavity 110 be the distance L of blind end not
2, diameter D
2meet: 0.16L≤D
2≤ 0.24L, 0.7L≤L
2≤ 0.75L.
Second tune screw 115 is finely tuned double tunning absorbing cavity TM by capacitance tuning
210the resonance frequency of pattern, makes to have 2 π mould field shape distribution non-operating mode TM in itself and gap coupled cavity
110mould resonance.
It should be noted that, the degree of depth that this two tuning screw 114 and 115 enters in double tunning absorbing cavity determines not have concrete scope in later stage debug process.As long as finally realize this double tunning absorbing cavity while resonance after its debugging in TM
110pattern and TM
210pattern just can.After debugging completes, this first tuning screw and second tune screw welding are on double tunning resonant cavity 110, and the degree of depth of inserting wherein remains unchanged.
Please refer to Fig. 2 A and Fig. 2 B, multiple-beam klystron Double-gap output cavity 200 comprises: cavity 210, and upper chamber cover 220, cavity of resorption lid 230, three surrounds sealing one output cavity jointly.This output cavity is coupled the Double-gap output cavity that diaphragm 240 is divided into up-down structure.
Radial outer periphery at coupling iris 240 arranges symmetrical two arc coupling slots (241 and 242).Wherein, the arc coupling slot 241 on right side is aimed at the second rectangular waveguide hole 122.This second rectangular waveguide hole 122 is alignd with first rectangular waveguide hole 121 in double tunning absorbing cavity left side.The position of left side arc coupling slot 242 arranges coupling loop 243, and the power of this gap coupled cavity mode of operation passes through this coupling loop 243 and outwards exports via the output rectangular waveguide 244 of this coupling loop periphery.
In addition, for the needs that assemble, at gap coupled cavity, towards a side of tuning absorbing cavity, positioning step 211 is set, when assembling, this double tunning absorbing cavity is snapped in this positioning step 211, is beneficial to location and the aligning of two rectangular waveguide hole 121 and 122.
In the present embodiment, double tunning absorbing cavity 110, tuning screw 114 and 115 material are oxygen-free copper.Below introduce the assembling process of the present embodiment absorbing cavity device: first, at the region of interest coating sintering microwave attenuation material of cavity 111, chamber lid 112; Then, cavity 111 and chamber lid 112 are welded together, form double tunning absorbing cavity 110; Again, double tunning absorbing cavity 110 is snapped on the positioning step 211 on double-gap coupling cavity of multiple-beam klystron 200 right sides, the first rectangular waveguide hole 121 and the second rectangular waveguide hole 122 alignment, weld both.
So far, the absorbing cavity device introduction of the present embodiment inhibition double-gap coupling cavity of multiple-beam klystron 2 pi-mode oscillations is complete.
In another exemplary embodiment of the present invention, a kind of adjustment method of above-mentioned absorbing cavity device is also provided, this adjustment method comprises: the degree of depth that conversion the first tuning screw 114 and second tune screw 115 insert in double tunning absorbing cavity 110, and find and make double tunning absorbing cavity while resonance at TM
110pattern and TM
210the position of pattern, after finding, is welded on the first tuning screw 114 and second tune screw 115 on cavity 111.
So far, the adjustment method of the absorbing cavity device of the present embodiment inhibition double-gap coupling cavity of multiple-beam klystron 2 pi-mode oscillations is introduced complete
So far, by reference to the accompanying drawings two embodiment of the present invention be have been described in detail.According to above, describe, absorbing cavity device and adjustment method thereof that those skilled in the art should suppress gap coupled cavity 2 pi-mode oscillations to the present invention have had clearly understanding.
In addition, the above-mentioned definition to each element and method is not limited in various concrete structures, shape or the mode of mentioning in embodiment, those of ordinary skills can change simply or replace it, for example: (1) above-described embodiment be take double-gap coupling cavity of multiple-beam klystron and described as example, the present invention is applicable equally for the gap coupled cavity of other types, it will be apparent to those skilled in the art that herein and repeat no more.
In sum, the present invention is by selecting shape and size, the coating material parameter of absorbing cavity, and regulates the degree of depth in diameter, position and the insertion double tunning absorbing cavity of tuning screw, make double tunning absorbing cavity simultaneously resonance at TM
110pattern and TM
210the position of pattern and size, can effectively suppress to have in double-gap coupling cavity of multiple-beam klystron output circuit the vibration of two non-operating modes of 2 π mould field shapes distributions, the unsteadiness of the multiple-beam klystron that elimination is caused by such vibration, reduce sundry spectrum level simultaneously, simultaneously very little to thering is the loading of the mode of operation that π mould field shape distributes.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. an absorbing cavity device that suppresses gap coupled cavity 2 pi-mode oscillations, is characterized in that, comprising:
Double tunning absorbing cavity (110), is hollow, rectangular sealing resonant cavity, its first end sealing, and at least part of area of its inner side chamber wall has microwave attenuation material;
Rectangle coupled waveguide (120), be connected between second end and described gap coupled cavity (200) of described double tunning absorbing cavity (110), over against the coupling slot of described gap coupled cavity (200) one sides, for the Mode Coupling between described double tunning absorbing cavity (110) and gap coupled cavity (200);
Wherein, two screws are offered in described double tunning absorbing cavity (110) top, by these two screws, in described double tunning absorbing cavity (110), insert vertically downward the first tuning screw (114) and second tune screw (115) respectively, wherein, these two screws are all positioned at the center of described double tunning absorbing cavity (110) broadside, make this double tunning absorbing cavity (110) while resonance in TM
110pattern and TM
210pattern.
2. absorbing cavity device according to claim 1, is characterized in that:
The diameter D of described the first tuning screw (114)
1, with the distance L of described double tunning absorbing cavity (100) second ends
1meet: 0.28L≤D
1≤ 0.36L, 0.4L≤L
1≤ 0.45L;
The diameter D of described second tune screw (115)
2, with the distance L of described double tunning absorbing cavity (100) second ends
2meet: 0.16L≤D
2≤ 0.24L, 0.7L≤L
2≤ 0.75L;
Wherein, L is the length on the long limit of described double tunning absorbing cavity.
3. absorbing cavity device according to claim 1, is characterized in that, the first end of described double tunning absorbing cavity (110) and near microwave attenuation material described in the chamber wall coating sintering of the first distolateral surrounding.
4. absorbing cavity device according to claim 3, is characterized in that, the relative dielectric constant δ of described microwave attenuation material, loss tangent Δ meet: 20≤δ≤25,0.6≤Δ≤0.8.
5. absorbing cavity device according to claim 4, is characterized in that, described microwave attenuation material is FeSiAl material.
6. absorbing cavity device according to claim 4, is characterized in that, the coated length of described microwave attenuation meets: 0.6≤L
s/ L≤0.8;
Wherein, L
sfor apply the length of microwave attenuation material along the long limit of described double tunning absorbing cavity, L is the length on the long limit of described double tunning absorbing cavity.
7. absorbing cavity device according to claim 1, is characterized in that:
The second rectangular waveguide hole (122) is offered in the position that described gap coupled cavity (200) is corresponding with described coupling slot;
Second of described double tunning absorbing cavity (110) is rectified the first rectangular waveguide hole (121) is offered in the position of described the second rectangular waveguide hole (122);
Described the first rectangular waveguide hole (121) and the second rectangular waveguide hole (122) are aimed at, and its periphery is sealed and matched, the described rectangle coupled waveguide (120) of formation.
8. absorbing cavity device according to claim 7, is characterized in that, described the second rectangular waveguide hole (122) is along the lateral direction towards gap coupled cavity, and the width value of broadside increases gradually;
The width value W of described the first rectangular waveguide hole (111) broadside is constant, equals the width value of described second rectangular waveguide hole the widest part broadside,
Wherein, the width value W of described the first rectangular waveguide hole (111) broadside meets: W/ λ
0≤ 0.4, λ
0operation wavelength for described gap coupled cavity (200).
9. according to the absorbing cavity device described in any one in claim 1 to 8, it is characterized in that the gap coupled cavity that described gap coupled cavity is multiple-beam klystron.
10. an adjustment method for absorbing cavity device described in any one in claim 1 to 8, is characterized in that, comprising:
Adjust described the first tuning screw (114) and second tune screw (115) and insert the degree of depth in double tunning absorbing cavity (110), find and make this double tunning absorbing cavity (110) while resonance at TM
110pattern and TM
210the position of pattern, after finding this position, is welded on described the first tuning screw (114) and second tune screw (115) on described double tunning absorbing cavity (110).
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| CN201410379750.4A CN104134596B (en) | 2014-08-04 | 2014-08-04 | The absorbing cavity device of suppression gap coupled cavity 2 pi-mode oscillation and adjustment method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410379750.4A CN104134596B (en) | 2014-08-04 | 2014-08-04 | The absorbing cavity device of suppression gap coupled cavity 2 pi-mode oscillation and adjustment method thereof |
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| CN104134596B CN104134596B (en) | 2016-09-21 |
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Cited By (2)
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| CN105428188A (en) * | 2015-12-18 | 2016-03-23 | 中国科学院电子学研究所 | Multi-link planar tuning component, and assembly clamp and assembly method therefor |
| CN112908810A (en) * | 2021-02-08 | 2021-06-04 | 电子科技大学 | High-frequency circuit of wedge-shaped confocal waveguide cyclotron device |
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| US5239272A (en) * | 1990-03-09 | 1993-08-24 | Eev Limited | Electron beam tube arrangements having primary and secondary output cavities |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105428188A (en) * | 2015-12-18 | 2016-03-23 | 中国科学院电子学研究所 | Multi-link planar tuning component, and assembly clamp and assembly method therefor |
| CN112908810A (en) * | 2021-02-08 | 2021-06-04 | 电子科技大学 | High-frequency circuit of wedge-shaped confocal waveguide cyclotron device |
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|---|---|
| CN104134596B (en) | 2016-09-21 |
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