CN104133542A - Power supply circuit - Google Patents
Power supply circuit Download PDFInfo
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- CN104133542A CN104133542A CN201310155151.XA CN201310155151A CN104133542A CN 104133542 A CN104133542 A CN 104133542A CN 201310155151 A CN201310155151 A CN 201310155151A CN 104133542 A CN104133542 A CN 104133542A
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- electronic switch
- overcurrent protection
- pin
- resistance
- process chip
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Abstract
The invention provides a power supply circuit, which comprises a voltage conversion module and an overcurrent protection module, wherein the overcurrent protection module comprises a control module, a first selection unit and a second selection unit; the first selection unit and the second selection unit respectively comprise an overcurrent protection resistor; the voltage conversion module comprises a processing chip and an inductor connected with each phase lead pin of the processing chip; the control module comprises a negative temperature coefficient thermistor; and the control module senses the temperature of the inductor connected with one phase lead pin through the negative temperature coefficient thermistor and outputs corresponding logic control signals so that the overcurrent protection resistors of the first selecting unit or the second selecting unit can be correspondingly provided for the processing chip, and the overcurrent protection for relevant elements in the circuit can be realized.
Description
Technical field
The present invention relates to a kind of power circuit.
Background technology
Conventionally, the core voltage controller of CPU has multiple duty, and CPU selects a phase pin of core voltage controller to work independently or multiple phase pin co-operation according to the operating voltage size that connects load.Core voltage controller is only having a phase pin to work independently and electric current difference when multiple phase pin co-operation; this just need to provide corresponding overcurrent protection threshold value for core voltage controller; when preventing the phase pin of core voltage controller switching work, cause the excessive damage mainboard of electric current and other elements.
Summary of the invention
In view of foregoing, be necessary to provide a kind of and can, according to the phase pin of the work of core voltage controller, adjust the power circuit of overcurrent protection threshold value.
A kind of power circuit, comprising:
One voltage transformation module, the inductance that comprises a process chip and be connected with each phase pin of process chip;
One control module, comprises a negative tempperature coefficient thermistor, the temperature of the inductance that described control module connects by out of phase pin described in negative tempperature coefficient thermistor sensing, and export corresponding logic control signal;
One first selected cell, comprise one first overcurrent protection resistance, described the first selected cell is connected with the overcurrent protection pin of control module and described process chip, in order to receive the corresponding logic control signal of control module, and the first overcurrent protection resistance is connected to the overcurrent protection pin of described process chip; And
One second selected cell; comprise one second overcurrent protection resistance; described the second selected cell is connected with the overcurrent protection pin of control module and described process chip; in order to receive the corresponding logic control signal of control module, and the second overcurrent protection resistance is connected to the overcurrent protection pin of described process chip.
The overcurrent protection module of power circuit of the present invention can according to process chip a phase pin work independently or the cooperative situation of multiple phase pin under and the resistance of different resistance is offered to the overcurrent protection pin of process chip; think that process chip sets corresponding overcurrent protection threshold value; thereby effectively protect associated electronic components, avoided electric current excessive and impaired.
Brief description of the drawings
Fig. 1 is the circuit diagram of the preferred embodiments of power circuit of the present invention.
Main element symbol description
| Power circuit | 100 |
| Voltage transformation module | 10 |
| Overcurrent protection module | 20 |
| Control module | 30 |
| The first selected cell | 40 |
| The second selected cell | 50 |
| Process chip | U1 |
| Comparer | U2 |
| Inductance | L1-L3 |
| Electric capacity | C1、C2 |
| Electronic switch | Q1-Q6、Q21-Q23 |
| Negative tempperature coefficient thermistor | R0 |
| Resistance | R1-R4 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Please refer to Fig. 1, the preferred embodiments of power circuit 100 of the present invention comprises a voltage transformation module 10 and an overcurrent protection module 20.Described overcurrent protection module 20 comprises a control module 30, one first selected cell 40 and one second selected cell 50.Described the first selected cell 40 comprises an overcurrent protection resistance R 2, and described the second selected cell 50 comprises an overcurrent protection resistance R 4.The inductance L 1-L3 that described voltage transformation module 10 comprises a process chip U1 and is connected with each phase pin phase1-phase3 of process chip U1, described control module 30 comprises a negative tempperature coefficient thermistor R0, the temperature of the inductance that described control module 30 connects by phase pin of negative tempperature coefficient thermistor R0 sensing, and export corresponding logic control signal, the temperature of this negative tempperature coefficient thermistor sensing inductance is temperature difference under the different operating state of power supply.
In the present embodiment, the process chip U1 of voltage transformation module 10 comprises that first to third phase position pin Phase1-Phase3, described first to third phase position pin Phase1-Phase3 connects respectively the first end of a corresponding inductance L1-L3, the second end of described inductance L 1-L3 is all by the first capacitor C 1 ground connection, described the second capacitor C 2 and described the first Capacitance parallel connection.Node between described the second capacitor C 2 and the second phase pin Phase2 is as the output end vo ut of voltage transformation module 10.Described process chip U1 also comprises that first leads to and drive pin Hgate1-Hgate3 and the first to the 3rd low pass to drive pin Lgate1-Lgate3 to third high, described voltage transformation module 10 also comprises electronic switch Q1-Q6, the first end of described electronic switch Q1 drives pin Hgate1 to be connected with the first high pass, and the second end of described electronic switch Q1 connects a voltage source vin; The first end of described electronic switch Q2 drives pin Lgate1 to be connected with the first low pass, and the second end of described electronic switch Q2 is connected with the 3rd end of electronic switch Q1, the 3rd end ground connection of described electronic switch Q2.The first end of described electronic switch Q3 drives pin Hgate2 to be connected with the second high pass, and the second end of described electronic switch Q3 connects described voltage source vin; The first end of described electronic switch Q4 drives pin Lgate2 to be connected with the second low pass, and the second end of described electronic switch Q4 is connected with the 3rd end of electronic switch Q3, the 3rd end ground connection of described electronic switch Q4.The first end of described electronic switch Q5 is connected with the logical pin Hgate3 that drives of third high, and the second end of described electronic switch Q5 connects described voltage source vin; The first end of described electronic switch Q6 drives pin Lgate3 to be connected with the 3rd low pass, and the second end of described electronic switch Q6 is connected with the 3rd end of electronic switch Q5, the 3rd end ground connection of described electronic switch Q6.
The corresponding high pass of phase pin of the pulse signal control work that described process chip U1 receives by pulse signal pin PWM drives pin and low pass to drive the respective electronic switch alternate conduction of pin, for example: the phase pin of work at present is Phase1, pulse signal control high pass drives pin Hgate1 and low pass to drive the respective electronic switch alternate conduction of pin Lgate1, thereby provides voltage to load by output end vo ut.
Control module 30 also comprises a comparer U2 and a resistance R 1, one end ground connection of described negative tempperature coefficient thermistor R0, the other end connects a power supply VCC by resistance R 1, the normal phase input end of described comparer U2 is connected with the node between described negative tempperature coefficient thermistor R0 and described resistance R 1, the inverting input of described comparer U2 connects a power supply VCC1, and the output end vo ut1 of described comparer U2 is connected with the input end of the first selected cell 40 and the second selected cell 50.
The first selected cell 40 comprises an overcurrent protection resistance R 2 and an electronic switch Q21.The first end of described electronic switch Q21 is connected with the output end vo ut1 of described comparer U2; the second end of described electronic switch Q21 is by described overcurrent protection resistance R 2 ground connection, and the 3rd end of electronic switch Q21 is connected with the overcurrent protection pin OCP of described process chip U1.
The second selected cell 50 comprises electronic switch Q22 and Q23, resistance R 3 and overcurrent protection resistance R 4; the first end of described electronic switch Q22 is connected with the output end vo ut1 of described comparer U2; the second end of described electronic switch Q22 connects described power supply VCC by a resistance R 3, the 3rd end ground connection of described electronic switch Q22.The first end of described electronic switch Q23 is connected with the second end of electronic switch Q22, and the second end of electronic switch Q23 is by described overcurrent protection resistance R 4 ground connection, and the 3rd end of described electronic switch Q23 is connected with the overcurrent protection pin OCP of described process chip U1.In the present embodiment, the current protection threshold value of described voltage transformation module 10 determines according to the resistance value of access overcurrent protection pin OCP.
In the present embodiment, described electronic switch Q1-Q6 and electronic switch Q21-Q23 are NMOS field effect transistor, and first end, the second end and the 3rd end of described electronic switch corresponds respectively to grid, drain electrode and the source electrode of NMOS field effect transistor.Certainly, in other embodiments, electronic switch Q1-Q6 and electronic switch Q21-Q23 are all replaceable has the switch of identical function for NPN type triode and other.
Below the principle of work to above-mentioned power circuit is described:
The clock pin CLOCK of process chip U1 receives the control signal from mainboard, to choose the phase pin of work of process chip U1.In the present embodiment, the duty of clock pin CLOCK select progressively phase pin Phase1-Phase3, even only has a phase pin job, the preferential selected phase pin of clock pin CLOCK Phase1 work, if only have two phase pin work, clock pin CLOCK selected phase pin Phase1 and phase pin Phase2 work.
When a phase pin in described first to third phase position pin Phase1-Phase3 is worked, , phase pin Phase1 work, the temperature of negative tempperature coefficient thermistor R0 inductive sensor L3, due to third phase position, pin Phase3 does not work, therefore inductance inductance L 3 does not have temperature, the resistance of negative tempperature coefficient thermistor R0 can not change because of inductance L 3, described comparer U2 exports a high level signal, the electronic switch Q21 conducting of described the first selected cell 40, the electronic switch Q22 conducting of described the second selected cell 50, electronic switch Q23 cut-off, described overcurrent protection resistance R 2 is connected to the overcurrent protection pin OCP of described process chip U1, described process chip U1 sets the current protection threshold value of described voltage transformation module 10 according to the resistance of resistance R 2.
When two phase pin in described first to third phase position pin Phase1-Phase3 are worked;; phase pin Phase1 and Phase2 all work; the temperature of the same inductive sensor L3 of negative tempperature coefficient thermistor R0; only have the principle in phase pin Phase1 when work identical with above-mentioned, described process chip U1 sets the current protection threshold value of described voltage transformation module 10 according to the resistance of resistance R 2.
When all phase pin of process chip U1, in the present embodiment first to third phase position pin Phase1-Phase3 while all working, the temperature of described negative tempperature coefficient thermistor R0 induction the 3rd inductance L 3, the resistance of negative tempperature coefficient thermistor R0 declines, described comparer U2 exports a low level signal, the electronic switch Q21 cut-off of described the first selected cell 40, the electronic switch Q22 cut-off of described the second selected cell 50, electronic switch Q23 conducting, described overcurrent protection resistance R 4 is connected to the overcurrent protection pin OCP of described process chip U1, described process chip U1 sets the current protection threshold value of described voltage transformation module 10 according to the resistance of resistance R 4.
The overcurrent protection module of power circuit of the present invention can according to process chip a phase pin work independently or the cooperative situation of multiple phase pin under and the resistance of different resistance is offered to the overcurrent protection pin of process chip; think that process chip sets corresponding overcurrent protection threshold value; thereby effectively protect associated electronic components, avoided electric current excessive and impaired.
Claims (6)
1. a power circuit, comprising:
One voltage transformation module, the inductance that comprises a process chip and be connected with each phase pin of process chip;
One control module, comprise a negative tempperature coefficient thermistor, the temperature of the inductance that described control module is connected with a phase pin of process chip by negative tempperature coefficient thermistor sensing, and export corresponding logic control signal, the temperature of this negative tempperature coefficient thermistor sensing inductance is temperature difference under the different operating state of power supply;
One first selected cell, comprises one first overcurrent protection resistance; And
One second selected cell, comprises one second overcurrent protection resistance;
Described first and second selected cell is all connected with the overcurrent protection pin of control module and described process chip; in order to receive the logic control signal of control module, and select the first overcurrent protection resistance or the second overcurrent protection resistance to be connected to according to this logic control signal the overcurrent protection pin of described process chip.
2. power circuit as claimed in claim 1, it is characterized in that: control module also comprises one first resistance and a comparer, one end ground connection of described negative tempperature coefficient thermistor, the other end connects one first power supply by the first resistance, the normal phase input end of described comparer is connected with the node between described negative tempperature coefficient thermistor and the first resistance, the inverting input of described comparer connects a second source, and the output of described comparer is connected with described the first selected cell and the second selected cell.
3. power circuit as claimed in claim 2; it is characterized in that: described the first selected cell also comprises one first electronic switch; the first end of described the first electronic switch is connected with the output terminal of described comparer; the second end of described the first electronic switch is by described the first overcurrent protection resistance eutral grounding, and the 3rd end of the first electronic switch is connected with the overcurrent protection pin of described process chip.
4. power circuit as claimed in claim 3, it is characterized in that: described the second selected cell also comprises one second electronic switch and the 3rd electronic switch, the first end of described the second electronic switch is connected with the output terminal of described comparer, the second end of described the second electronic switch connects described the first power supply by one second resistance, the 3rd end ground connection of described the second electronic switch, the first end of described the 3rd electronic switch is connected with the second end of the second electronic switch, the second end of the 3rd electronic switch is by described the second overcurrent protection resistance eutral grounding, the 3rd end of described the 3rd electronic switch is connected with the overcurrent protection pin of described process chip.
5. power circuit as claimed in claim 4, is characterized in that: the process chip of described voltage transformation module comprises that first to third phase position pin, the temperature of the inductance that this negative tempperature coefficient thermistor sensing is connected with third phase position pin; In the time that all phase pin are all worked, the temperature of the inductance that described negative tempperature coefficient thermistor induction third phase position pin connects, described comparer is exported a low level signal, the second electronic switch cut-off of described the second selected cell, the 3rd electronic switch conducting, the overcurrent protection pin of described process chip receives the resistance of described the second overcurrent protection resistance; In the time that described the first phase pin work or the first phase pin and the second phase pin are worked simultaneously; the temperature of the inductance that described negative tempperature coefficient thermistor induction third phase position pin connects; described comparer is exported a high level signal; the first electronic switch conducting of described the first selected cell, the overcurrent protection pin of described process chip receives the resistance of described the first overcurrent protection resistance.
6. power circuit as claimed in claim 5, it is characterized in that: the described first to the 3rd electronic switch is NMOS field effect transistor, the described first first end to the 3rd electronic switch, the second end and the 3rd end correspond respectively to grid, drain electrode and the source electrode of NMOS field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310155151.XA CN104133542A (en) | 2013-04-30 | 2013-04-30 | Power supply circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310155151.XA CN104133542A (en) | 2013-04-30 | 2013-04-30 | Power supply circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104133542A true CN104133542A (en) | 2014-11-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310155151.XA Pending CN104133542A (en) | 2013-04-30 | 2013-04-30 | Power supply circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104133542A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107705763A (en) * | 2017-10-12 | 2018-02-16 | 深圳市华星光电技术有限公司 | Level shifting circuit and liquid crystal display device |
-
2013
- 2013-04-30 CN CN201310155151.XA patent/CN104133542A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107705763A (en) * | 2017-10-12 | 2018-02-16 | 深圳市华星光电技术有限公司 | Level shifting circuit and liquid crystal display device |
| CN107705763B (en) * | 2017-10-12 | 2020-04-28 | 深圳市华星光电技术有限公司 | Level conversion circuit and liquid crystal display device |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Application publication date: 20141105 |