CN104124358A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
- Publication number
- CN104124358A CN104124358A CN201310143911.5A CN201310143911A CN104124358A CN 104124358 A CN104124358 A CN 104124358A CN 201310143911 A CN201310143911 A CN 201310143911A CN 104124358 A CN104124358 A CN 104124358A
- Authority
- CN
- China
- Prior art keywords
- layer
- organic electroluminescence
- electroluminescence device
- thickness
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides an organic light-emitting device comprising a conductive anode substrate, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a composite cathode layer. The above-mentioned layers are successively laminated. The composite cathode layer includes a first metal layer, a doping layer, and a second metal layer, wherein the layers are successively laminated. Materials used by the first metal layer and the second metal layer are selected from silver, aluminum, platinum or gold; the doping layer is made of a mixing material formed by an organosilicone micromolecule material doped with VB group metallic oxide, wherein the organosilicone micromolecule material can be diphenyl di (o-tolyl) silicon, p-di(triphenylsilyl) benzene, 1,3-bis(triphenylsilyl)benzene or p-bis (triphenylsilyl)benzene and the VB group metallic oxide can be tantalum pentoxide, vanadium pentoxide, or niobium pentoxide. Because of the composite cathode layer, the light can be scattered, thereby improving the luminous efficiency of the device. In addition, the invention also provides a preparation method of the organic light-emitting device.
Description
Technical field
The present invention relates to organic electroluminescence device, be specifically related to a kind of organic electroluminescence device and preparation method thereof.
Background technology
1987, the C.W.Tang of Eastman Kodak company of the U.S. and VanSlyke reported the breakthrough in organic electroluminescent research.Utilize ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, under 10V, brightness reaches 1000cd/m
2, its luminous efficiency is 1.51lm/W, life-span to be greater than 100 hours.
In traditional luminescent device, it is to be transmitted into device outside that the light of device inside only has 18% left and right, and other part can consume in device outside with other forms, this be due between interface, there is refractive index poor (as the specific refractivity between glass and ITO, glass refraction is that 1.5, ITO is 1.8, light arrives glass from ITO, will there is total reflection), caused the loss of total reflection, thereby it is lower to cause the entirety of luminescent device to go out optical property.
Summary of the invention
For overcoming the defect of above-mentioned prior art, the invention provides a kind of organic electroluminescence device and preparation method thereof.By prepare composite cathode layer on electron injecting layer, improve the luminous efficiency of organic electroluminescence device.
On the one hand, the invention provides a kind of organic electroluminescence device, comprise the conductive anode substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the composite cathode layer that stack gradually, described composite cathode layer comprises the first metal layer, doped layer and the second metal level that lamination arranges successively
The material of described the first metal layer is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au), the material of described doped layer is the composite material that organosilicon small molecule material doping VB family metal oxide forms, described organosilicon small molecule material is diphenyl two (o-tolyl) silicon (UGH1), p-bis-(triphenyl silicon) benzene (UGH2), 1, two (triphenyl silicon) benzene (UGH3) of 3-or two (triphenyl silicon) benzene (UGH4) of p-; Described VB family metal oxide is tantalum pentoxide (Ta
2o
5), vanadic oxide (V
2o
5) or niobium pentaoxide (Nb
2o
5), the material of described the second metal level is silver, aluminium, platinum or gold.
Preferably, in described doped layer, the mass ratio of described organosilicon small molecule material and VB family metal oxide is 1:0.5～2.
Preferably, the thickness of described the first metal layer is 5～30nm.
Preferably, the thickness of described doped layer is 20～100nm.
Preferably, the thickness of described the second metal level is 200～500nm.
Composite cathode layer comprises the first metal layer, doped layer and the second metal level that lamination arranges successively.On electron injecting layer, prepare the first metal layer, can improve the transmitance of light, simultaneously, form the smooth metallic diaphragm of one deck, the roughness of electron injecting layer is reduced, boundary defect reduces, then prepare one deck doped layer, formed by organosilicon small molecule material and VB family metal oxide, organosilicon small molecule material at room temperature just can crystallization, after crystallization, make film surface present wave structure, when light is during from this side outgoing, can change the refraction angle of light, make light carry out scattering, reduce to the light of device both sides transmitting, and VB family metal oxide has very strong transmitance in visible-range, reach more than 85%, can make most light transmission, finally prepare again the second metal level, main plaing a part conducted electricity and reflects, this composite cathode layer finally can effectively improve luminous efficiency.
Conductive anode substrate can be conducting glass substrate or organic PETG substrate that conducts electricity.Preferably, conductive anode substrate is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO).More preferably, conductive anode substrate is indium tin oxide glass.
The material of hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer is not done concrete restriction, and this area current material is all applicable to the present invention.
Preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5), the thickness of hole injection layer is 20～80nm.
More preferably, the material of hole injection layer is MoO
3, thickness is 35nm.
Preferably, the material of hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), thickness is 20～60nm.
More preferably, the material of hole transmission layer is N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine (NPB), thickness is 50nm.
Preferably, the luminescent material of luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) or oxine aluminium (Alq
3), thickness is 5～40nm.
More preferably, the luminescent material of luminescent layer is two (the 9-ethyl-3-carbazole vinyl)-1 of 4,4'-, 1'-biphenyl (BCzVBi), and thickness is 30nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and 4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI), thickness is 40～300nm.
More preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), and thickness is 250nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); Thickness is 0.5～10nm.
More preferably, the material of electron injecting layer is lithium fluoride (LiF), and thickness is 1nm.
On the other hand, the invention provides a kind of preparation method of organic electroluminescence device, comprise the following steps:
On conductive anode substrate, prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
On described electron injecting layer, prepare composite cathode layer: first on described electron injecting layer, prepare the first metal layer by the mode of vacuum evaporation, on described the first metal layer, prepare doped layer by the mode of electron beam evaporation plating again, finally on doped layer, prepare the second metal level by the mode of vacuum evaporation, obtain organic electroluminescence device;
The material of described the first metal layer is silver, aluminium, platinum or gold, the material of described doped layer is the composite material that organosilicon small molecule material doping VB family metal oxide forms, described organosilicon small molecule material is diphenyl two (o-tolyl) silicon, p-bis-(triphenyl silicon) benzene, 1, two (triphenyl silicon) benzene of 3-or two (triphenyl silicon) benzene of p-; Described VB family metal oxide is tantalum pentoxide, vanadic oxide or niobium pentaoxide; The material of described the second metal level is silver, aluminium, platinum or gold;
The energy density of described electron beam evaporation plating is 10～l00W/cm
2, the material evaporation speed of described doped layer is 1～10nm/s; In described vacuum evaporation process, vacuum degree is 2 × 10
-3～5 × 10
-5pa, the material evaporation speed of described the first metal layer and the second metal level is 1～10nm/s.
Preferably, in described doped layer, the mass ratio of described organosilicon small molecule material and VB family metal oxide is 1:0.5～2.
Preferably, the thickness of described the first metal layer is 5～30nm.
Preferably, the thickness of described doped layer is 20～100nm.
Preferably, the thickness of described the second metal level is 200～500nm.
Conductive anode substrate can be conducting glass substrate or organic PETG substrate that conducts electricity.Preferably, conductive anode substrate is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO).More preferably, conductive anode substrate is indium tin oxide glass.
Preferably, anode substrate is carried out to following clean: adopt successively liquid detergent, the each ultrasonic cleaning of deionized water 15 minutes, and then stand-by by oven for drying.
The material of hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer is not done concrete restriction, and this area current material is all applicable to the present invention.Hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer all can adopt the mode of vacuum evaporation to prepare, and its concrete operations condition is not made particular determination.
Preferably, the temperature of vacuum evaporation is 100～500 DEG C, and vacuum degree is 1 × 10
-3～1 × 10
-5pa.
Preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5), the thickness of hole injection layer is 20～80nm.
More preferably, the material of hole injection layer is MoO
3, thickness is 35nm.
Preferably, the material of hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), thickness is 20～60nm.
More preferably, the material of hole transmission layer is N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine (NPB), thickness is 50nm.
Preferably, the luminescent material of luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) or oxine aluminium (Alq
3), thickness is 5～40nm.
More preferably, the luminescent material of luminescent layer is two (the 9-ethyl-3-carbazole vinyl)-1 of 4,4'-, 1'-biphenyl (BCzVBi), and thickness is 30nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and 4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI), thickness is 40～300nm.
More preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), and thickness is 250nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); Thickness is 0.5～10nm.
More preferably, the material of electron injecting layer is lithium fluoride (LiF), and thickness is 1nm.
The invention provides a kind of organic electroluminescence device and preparation method thereof and there is following beneficial effect:
(1) organic electroluminescence device provided by the invention, there is composite cathode layer structure, composite cathode layer comprises the first metal layer, doped layer and the second metal level that lamination arranges successively, the first metal layer can improve the transmitance of light, simultaneously, form the smooth metallic diaphragm of one deck, the roughness of electron injecting layer is reduced, boundary defect reduces; The easy crystallization of organosilicon small molecule material of doped layer, after crystallization, make film surface present wave structure, this structure can change the refraction angle of light, make light carry out scattering, reduce to the light of device both sides transmitting, and VB family metal oxide has very strong transmitance in visible-range, can make most light transmission; The second metal level mainly plays conduction and reflection, and this composite cathode layer finally can effectively improve luminous efficiency;
(2) preparation technology of organic electroluminescence device of the present invention is simple, and easily large area preparation is suitable for large-scale industrialization and uses.
Brief description of the drawings
Fig. 1 is the structural representation of the organic electroluminescence device prepared of the embodiment of the present invention 1;
Fig. 2 is the current density of organic electroluminescence device and the graph of a relation of luminous efficiency prepared by the embodiment of the present invention 1 and comparative example.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on ito glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 DEG C, and vacuum degree is 1 × 10
-5pa.Wherein, the material of hole injection layer is MoO
3, thickness is 35nm; The material of hole transmission layer is TAPC, and thickness is 50nm; The material of luminescent layer is BCzVBi, and light emitting layer thickness is 30nm; The material of electron transfer layer is Bphen, and thickness is 250nm; The material of electron injecting layer is LiF, and thickness is 1nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises the first metal layer, doped layer and the second metal level that stack gradually;
The preparation of composite cathode layer: first prepare by the mode of vacuum evaporation the first metal layer that a layer thickness is 15nm on described electron injecting layer, material is Ag, and evaporation speed is 3nm/s; On described the first metal layer, prepare by the mode of electron beam evaporation plating the doped layer that a layer thickness is 50nm again, material is UGH2 and Ta
2o
5the composite material forming (is expressed as UGH2:Ta
2o
5), UGH2 and Ta
2o
5mass ratio be 1:1, evaporation speed is 3nm/s, the energy density of electron beam evaporation plating is 30W/cm
2; Finally on doped layer, prepare by the mode of vacuum evaporation the second metal level that a layer thickness is 400nm, material is Al, and evaporation speed is 3nm/s, and the vacuum degree of vacuum evaporation process is 8 × 10
-5pa.
Fig. 1 is the structural representation of the organic electroluminescence device that makes of the embodiment of the present invention 1.As shown in Figure 1, the present embodiment organic electroluminescence device, comprises ito glass substrate 1, hole injection layer 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, electron injecting layer 6 and composite cathode layer 7 successively.Described composite cathode layer 7 comprises that a layer thickness is the second metal level 73 that the first metal layer 71 of 15nm, doped layer 72 that a layer thickness is 50nm and a layer thickness are 400nm successively.The structure of this organic electroluminescence device is: ito glass/MoO
3/ TAPC/BCzVBi/Bphen/LiF/Ag/UGH2:Ta
2o
5(1:1)/Al, wherein, slash "/" represents layer structure, UGH2:Ta
2o
5in colon ": " represent to mix, 1:1 represents the former and the latter's mass ratio, after in embodiment each meaning that meets expression identical.
Embodiment 2
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on AZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 DEG C, and vacuum degree is 1 × 10
-5pa.Wherein, the material of hole injection layer is WO
3, thickness is 80nm; The material of hole transmission layer is TCTA, and thickness is 60nm; The material of luminescent layer is ADN, and thickness is 5nm; The material of electron transfer layer is Bphen, and thickness is 200nm; The material of electron injecting layer is CsN
3, thickness is 10nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises the first metal layer, doped layer and the second metal level that stack gradually;
The preparation of composite cathode layer: first prepare by the mode of vacuum evaporation the first metal layer that a layer thickness is 5nm on described electron injecting layer, material is Al, and evaporation speed is 10nm/s; On described the first metal layer, prepare by the mode of electron beam evaporation plating the doped layer that a layer thickness is 100nm again, material is UGH1 and V
2o
5the composite material forming (is expressed as UGH1:V
2o
5), UGH1 and V
2o
5mass ratio be 1:2, evaporation speed is 10nm/s, the energy density of electron beam evaporation plating is 10W/cm
2; Finally on doped layer, prepare by the mode of vacuum evaporation the second metal level that a layer thickness is 200nm, material is Ag, and evaporation speed is 10nm/s, and the vacuum degree of vacuum evaporation process is 2 × 10
-3pa.
The structure of the organic electroluminescence device that the present embodiment provides is: AZO glass/WO
3/ TCTA/ADN/Bphen/CsN
3/ Al/UGH1:V
2o
5(1:2)/Ag.
Embodiment 3
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on IZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 DEG C, and vacuum degree is 1 × 10
-5pa.Wherein, the material of hole injection layer is V
2o
5, thickness is 20nm; The material of hole transmission layer is TCTA, and thickness is 30nm; The material of luminescent layer is Alq
3, thickness is 40nm; The material of electron transfer layer is TPBi, and thickness is 60nm; The material of electron injecting layer is CsF, and thickness is 0.5nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises the first metal layer, doped layer and the second metal level that stack gradually;
The preparation of composite cathode layer: first prepare by the mode of vacuum evaporation the first metal layer that a layer thickness is 30nm on described electron injecting layer, material is Au, and evaporation speed is 1nm/s; On described the first metal layer, prepare by the mode of electron beam evaporation plating the doped layer that a layer thickness is 20nm again, material is UGH3 and Nb
2o
5the composite material forming (is expressed as UGH3:Nb
2o
5), UGH3 and Nb
2o
5mass ratio be 1:0.5, evaporation speed is 1nm/s, the energy density of electron beam evaporation plating is 100W/cm
2; Finally on doped layer, prepare by the mode of vacuum evaporation the second metal level that a layer thickness is 500nm, material is Pt, and evaporation speed is 1nm/s, and the vacuum degree of vacuum evaporation process is 5 × 10
-5pa.
The structure of the organic electroluminescence device that the present embodiment provides is: IZO glass/V
2o
5/ TCTA/Alq
3/ TPBi/CsF/Au/UGH3:Nb
2o
5(1:0.5)/Pt.
Embodiment 4
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on IZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 DEG C, and vacuum degree is 1 × 10
-5pa.Wherein, the material of hole injection layer is MoO
3, thickness is 30nm; The material of hole transmission layer is TAPC, and thickness is 50nm; The material of luminescent layer is DCJTB, and thickness is 5nm; The material of electron transfer layer is Bphen, and thickness is 40nm; The material of electron injecting layer is Cs
2cO
3, thickness is 1nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises the first metal layer, doped layer and the second metal level that stack gradually;
The preparation of composite cathode layer: first prepare by the mode of vacuum evaporation the first metal layer that a layer thickness is 10nm on described electron injecting layer, material is Pt, and evaporation speed is 5nm/s; On described the first metal layer, prepare by the mode of electron beam evaporation plating the doped layer that a layer thickness is 60nm again, material is UGH4 and Ta
2o
5the composite material forming (is expressed as UGH4:Ta
2o
5), UGH4 and Ta
2o
5mass ratio be 1:1.5, evaporation speed is 5nm/s, the energy density of electron beam evaporation plating is 80W/cm
2; Finally on doped layer, prepare by the mode of vacuum evaporation the second metal level that a layer thickness is 350nm, material is Au, and evaporation speed is 5nm/s, and the vacuum degree of vacuum evaporation process is 5 × 10
-4pa.
The structure of the organic electroluminescence device that the present embodiment provides is: IZO glass/MoO
3/ TAPC/DCJTB/Bphen/Cs
2cO
3/ Pt/UGH4:Ta
2o
5(1:1.5)/Au.
Comparative example
For embodying creativeness of the present invention, the present invention is also provided with comparative example, the difference of comparative example and embodiment 1 is that the negative electrode in comparative example is metal simple-substance silver (Ag), and thickness is 120nm, and the concrete structure of comparative example's organic electroluminescence device is: ito glass/MoO
3/ TAPC/BCzVBi/Bphen/LiF/Ag, respectively corresponding conductive anode substrate of glass, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode.
Adopt the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the current-voltage tester Keithley2400 test electric property of Keithley company of the U.S., CS-100A colorimeter test brightness and the colourity of Konica Minolta company of Japan, obtain the luminous efficiency of organic electroluminescence device with current density change curve, to investigate the luminous efficiency of device, tested object is organic electroluminescence device prepared by embodiment 1 and comparative example.Test result as shown in Figure 2.
Fig. 2 is the current density of organic electroluminescence device and the graph of a relation of luminous efficiency prepared by embodiment 1 and comparative example.Wherein, curve 1 is prepared for embodiment 1 the current density of organic electroluminescence device and the graph of a relation of luminous efficiency; The current density of organic electroluminescence device and the graph of a relation of luminous efficiency that curve 2 is prepared for comparative example.As can see from Figure 2, under different current densities, all large than comparative example of the luminous efficiency of organic electroluminescence device prepared by embodiment 1, the maximum luminous efficiency that embodiment 1 is prepared with organic electroluminescence devices is 6.33lm/W, and that comparative example is only 3.49lm/W, meanwhile, along with the increase of current density, the luminous efficiency decay of organic electroluminescence device prepared by embodiment 1 is slower, still remains on a higher numerical value.This explanation, the first metal layer can make the roughness of electron injecting layer reduce, boundary defect reduces, doped layer makes film surface present wave structure, make light carry out scattering, make most light transmission, and the second metal level, be mainly the effect of playing conduction and reflection, composite cathode layer has finally effectively improved the luminous efficiency of device.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. an organic electroluminescence device, comprise the conductive anode substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the composite cathode layer that stack gradually, it is characterized in that, described composite cathode layer comprises the first metal layer, doped layer and the second metal level that lamination arranges successively
The material of described the first metal layer is silver, aluminium, platinum or gold, the material of described doped layer is the composite material that organosilicon small molecule material doping VB family metal oxide forms, described organosilicon small molecule material is diphenyl two (o-tolyl) silicon, p-bis-(triphenyl silicon) benzene, 1, two (triphenyl silicon) benzene of 3-or two (triphenyl silicon) benzene of p-; Described VB family metal oxide is tantalum pentoxide, vanadic oxide or niobium pentaoxide; The material of described the second metal level is silver, aluminium, platinum or gold.
2. organic electroluminescence device as claimed in claim 1, is characterized in that, in described doped layer, the mass ratio of described organosilicon small molecule material and VB family metal oxide is 1:0.5～2.
3. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described the first metal layer is 5～30nm.
4. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described doped layer is 20～100nm.
5. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described the second metal level is 200～500nm.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
On conductive anode substrate, prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
On described electron injecting layer, prepare composite cathode layer: first on described electron injecting layer, prepare the first metal layer by the mode of vacuum evaporation, on described the first metal layer, prepare doped layer by the mode of electron beam evaporation plating again, finally on doped layer, prepare the second metal level by the mode of vacuum evaporation, obtain organic electroluminescence device;
The material of described the first metal layer is silver, aluminium, platinum or gold, the material of described doped layer is the composite material that organosilicon small molecule material doping VB family metal oxide forms, described organosilicon small molecule material is diphenyl two (o-tolyl) silicon, p-bis-(triphenyl silicon) benzene, 1, two (triphenyl silicon) benzene of 3-or two (triphenyl silicon) benzene of p-; Described VB family metal oxide is tantalum pentoxide, vanadic oxide or niobium pentaoxide; The material of described the second metal level is silver, aluminium, platinum or gold;
The energy density of described electron beam evaporation plating is 10～l00W/cm
2, the material evaporation speed of described doped layer is 1～10nm/s; In described vacuum evaporation process, vacuum degree is 2 × 10
-3～5 × 10
-5pa, the material evaporation speed of described the first metal layer and the second metal level is 1～10nm/s.
7. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, in described doped layer, the mass ratio of described organosilicon small molecule material and VB family metal oxide is 1:0.5～2.
8. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness of described the first metal layer is 5～30nm.
9. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness of described doped layer is 20～100nm.
10. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness of described the second metal level is 200～500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310143911.5A CN104124358A (en) | 2013-04-24 | 2013-04-24 | Organic light-emitting device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310143911.5A CN104124358A (en) | 2013-04-24 | 2013-04-24 | Organic light-emitting device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104124358A true CN104124358A (en) | 2014-10-29 |
Family
ID=51769699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310143911.5A Pending CN104124358A (en) | 2013-04-24 | 2013-04-24 | Organic light-emitting device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104124358A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017085068A1 (en) * | 2015-11-16 | 2017-05-26 | Osram Oled Gmbh | Organic light-emitting diode and method for producing an organic light-emitting diode |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1668154A (en) * | 2005-03-21 | 2005-09-14 | 友达光电股份有限公司 | Organic electroluminescent element, panel display and portable electronic device |
| CN1967901A (en) * | 2005-11-18 | 2007-05-23 | 精工电子有限公司 | Electroluminescence element and display device using the same |
| CN101853877A (en) * | 2009-02-09 | 2010-10-06 | 三星移动显示器株式会社 | Organic light emitting diode display |
| EP2287939A1 (en) * | 2008-05-21 | 2011-02-23 | Pioneer Corporation | Organic electroluminescent element |
| CN102257100A (en) * | 2008-12-18 | 2011-11-23 | 剑桥实业有限公司 | Wide temperature-range smectic liquid crystal materials |
| CN102569663A (en) * | 2010-12-16 | 2012-07-11 | 财团法人工业技术研究院 | Stacked electrode and photoelectric element |
-
2013
- 2013-04-24 CN CN201310143911.5A patent/CN104124358A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1668154A (en) * | 2005-03-21 | 2005-09-14 | 友达光电股份有限公司 | Organic electroluminescent element, panel display and portable electronic device |
| CN1967901A (en) * | 2005-11-18 | 2007-05-23 | 精工电子有限公司 | Electroluminescence element and display device using the same |
| EP2287939A1 (en) * | 2008-05-21 | 2011-02-23 | Pioneer Corporation | Organic electroluminescent element |
| CN102257100A (en) * | 2008-12-18 | 2011-11-23 | 剑桥实业有限公司 | Wide temperature-range smectic liquid crystal materials |
| CN101853877A (en) * | 2009-02-09 | 2010-10-06 | 三星移动显示器株式会社 | Organic light emitting diode display |
| CN102569663A (en) * | 2010-12-16 | 2012-07-11 | 财团法人工业技术研究院 | Stacked electrode and photoelectric element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017085068A1 (en) * | 2015-11-16 | 2017-05-26 | Osram Oled Gmbh | Organic light-emitting diode and method for producing an organic light-emitting diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104124367A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124368A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124370A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124358A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124362A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124364A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124354A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124363A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124343A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124357A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124396A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104124352A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124342A (en) | Organic light-emitting device and preparation method thereof | |
| CN104518145A (en) | Organic electroluminescent device and method for preparing same | |
| CN104518150A (en) | Organic electroluminescent device and method for preparing same | |
| CN104124338A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124340A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124341A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124339A (en) | Organic light-emitting device and preparation method thereof | |
| CN104051662A (en) | Composite anode and manufacturing method thereof, and organic electroluminescent device and manufacturing method thereof | |
| CN104518106A (en) | Organic light-emitting device and making method thereof | |
| CN104124381A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104659229A (en) | Organic electroluminescence device and manufacturing method for organic electroluminescence device | |
| CN104124350A (en) | Organic light-emitting device and preparation method thereof | |
| CN104466001A (en) | Organic electroluminescent device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141029 |