CN104112755A - Flip chip solid-state light-emitting display - Google Patents
Flip chip solid-state light-emitting display Download PDFInfo
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- CN104112755A CN104112755A CN201310131060.2A CN201310131060A CN104112755A CN 104112755 A CN104112755 A CN 104112755A CN 201310131060 A CN201310131060 A CN 201310131060A CN 104112755 A CN104112755 A CN 104112755A
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Abstract
A flip chip solid-state light-emitting display provided by the present invention comprises a substrate, a plurality of solid-state light emitting sources and a plurality of thin film transistors, and the solid-state light emitting sources and the thin film transistors are arranged on the substrate adjacently. Each solid-state light emitting source is a light emitting diode, the light emitting diodes of the solid-state light emitting sources are arranged on the substrate by a flip chip structure, and the thin film transistors are electrically connected with the light emitting diodes of the solid-state light emitting sources via source electrodes or drain electrodes. According to the present invention, and by the flip chip light emitting diodes formed by combining the solid-state light emitting sources and the thin film transistors, the service life deterioration problem of the materials of the organic light emitting diodes during the preparation process can be solved effectively.
Description
Technical field
The present invention relates to a kind of crystal covering type solid-state luminous display, especially with the flip chip structure in solid luminescent source, replace a kind of crystal covering type solid-state luminous display in organic light emission source.
Background technology
The major technique of a new generation's flat-panel monitor (Flat-Panel Display), it is the positive type organic light emitting diode display (Active Matrix Organic Light Emitting Display, AMOLED) that utilizes organic material to manufacture.Although described positive type organic light emitting diode display have high brightness, screen reaction speed fast, compact, full-color, without subtense angle, do not need the advantages such as backlight and power saving.But luminous organic material is easily subject to the impact of processing environment in processing procedure, for example the aqueous vapor in environment can make organic material produce degradation phenomena.Therefore, positive type organic light emitting diode display need to just can complete making at the environment of vacuum, and need to seal and stop program to avoid making organic material deteriorated.In addition, organic material also has deteriorated problem of luminescent material life-span to exist, and is the problem that positive type organic light emitting diode display development need solves.
Summary of the invention
In view of this, be necessary to provide and can reduce such environmental effects and the good a kind of crystal covering type solid-state luminous display of radiating effect.
The invention provides a kind of crystal covering type solid-state luminous display, it comprises a substrate, a plurality of solid luminescents source and plurality of films transistor, described solid luminescent source and described thin-film transistor are adjacent to be arranged on described substrate, described solid luminescent source is to be a light-emitting diode, the light-emitting diode in described solid luminescent source is to cover crystalline substance (Flip Chip) structure to be arranged on described substrate, and described thin-film transistor is by source electrode or drain electrode and described solid luminescent source light-emitting diode electrically connect.
Compare prior art, crystal covering type solid-state luminous display of the present invention, by the light LED material characteristic in described solid luminescent source, avoid producing in processing procedure deteriorated problem, for example the nitride semiconductor LED in III-V family semiconductor just possesses long-life, high resistance environmental factor, high breakdown voltage and wide energy gap characteristic, and by flip chip structure, make the P type semiconductor of light-emitting diode approach described substrate, can improve radiating efficiency and avoid the semiconductor change electrical characteristics of being heated.
Accompanying drawing explanation
Fig. 1 is the assembled sectional view of the first execution mode of crystal covering type solid-state luminous display of the present invention.
Fig. 2 is the assembled sectional view of the second execution mode of crystal covering type solid-state luminous display of the present invention.
Fig. 3 is the schematic diagram of fluorescent material first execution mode of Fig. 1 crystal covering type solid-state luminous display.
Fig. 4 is the schematic diagram of fluorescent material second execution mode of Fig. 1 crystal covering type solid-state luminous display.
Main element symbol description
| Solid-state luminous display | 10、20 |
| Substrate | 12、22 |
| Resilient coating | 122 |
| Solid luminescent source | 14、24 |
| P type electrode | 141、241 |
| P type semiconductor layer | 142、242 |
| Luminescent layer | 143、243 |
| N type semiconductor layer | 144 |
| N-type electrode | 145、245 |
| Contact layer | 146、246 |
| Current-diffusion layer | 147、247 |
| Oxide semiconductor layer | 244 |
| Brilliant distributed Bragg reflecting layer of heap of stone | 248 |
| Via | 249 |
| Thin-film transistor | 16、26 |
| Gate electrode | 161、261 |
| Source electrode | 162、262 |
| Drain electrode | 163、263 |
| Insulating barrier | 164、264 |
| Active layer | 165、265 |
| Fluorescent material | 18 |
| Fluorescent plate | 182 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Below in conjunction with accompanying drawing, the present invention being done to one specifically introduces.
Referring to shown in Fig. 1, is the assembled sectional view of the first execution mode of crystal covering type solid-state luminous display of the present invention.It comprises a substrate 12, a plurality of solid luminescents source (Solid State Lighting) 14 and plurality of films transistor (Thin Film Transistor) 16 described solid-state luminous display 10.Described substrate 12 materials be for sapphire (Sapphire), silicon (Si), silicon-on-insulator (Silicon On Insulator, SOI), glass, gallium nitride (GaN), zinc oxide (ZnO) or plastics one of them.On the surface of described substrate 12, be provided with a resilient coating 122, described resilient coating 122 is to be buffer insulation layer (Insulation Buffer Layer).Described solid luminescent source 14 and described thin-film transistor 16 are set on described resilient coating 122, described solid luminescent source 14 is to be a light-emitting diode, and described solid luminescent source 14 light-emitting diodes are arranged on described substrate 12 to cover crystalline substance (Flip Chip) structure.Described solid luminescent source 14 light-emitting diodes can be selected from the light-emitting diode of oxide semiconductor, nitride-based semiconductor, phosphide semiconductor or arsenide semiconductor.Described solid luminescent source 14 light-emitting diodes can be also compound semiconductor (Compound Semiconductor), and it comprises III-V family, II-VI family or IV-IV family semiconductor.In this first execution mode, described solid luminescent source 14 light-emitting diodes are light-emitting diodes of a P-N type, and it comprises a P type electrode 141, p type semiconductor layer 142, luminescent layer 143, n type semiconductor layer 144 and a N-type electrode 145.Wherein, down, and described n type semiconductor layer 144 forms the flip chip structure of described solid luminescent source 14 light-emitting diodes upward to described p type semiconductor layer 142.Described p type semiconductor layer 142 tops arrange described luminescent layer 143, and described n type semiconductor layer 144 is set on described luminescent layer 143, and described n type semiconductor layer 144 arranges described N-type electrode 145 again.Described p type semiconductor layer 142 belows are fixedly connected on described substrate 12 by described P type electrode 141, and described P type electrode 141 is metal derby or metallic film.The flip chip structure of described solid luminescent source 14 light-emitting diodes, make described p type semiconductor layer 142 approach described substrate 12, thereby the heat that described p type semiconductor layer 142 produces can accelerate heat radiation by described substrate 12, avoids described p type semiconductor layer 142 be influenced by heat and change electrical characteristics.Between described p type semiconductor layer 142 and described P type electrode 141, further comprise 146 and current-diffusion layers of a contact layer (Contact Layer) (Current Spreading Layer) 147, described contact layer 146 is to be ohmic contact layer, coordinate described current-diffusion layer 147 to make current spread, can increase the luminous efficiency of described solid luminescent source 14 light-emitting diodes.In 14 light-emitting diodes of described solid luminescent source, described n type semiconductor layer 144 is metal-oxide semiconductor (MOS) or compound semiconductor, described metal-oxide semiconductor (MOS), for example zinc oxide (ZnO), zinc oxide gallium indium IGZO, described compound semiconductor, for example zinc selenide (ZnSe), GaAs (GaAs), AlGaInP (InGaAlP) or the indium gallium nitride aluminium (AlInGaN) in III-V family semiconductor.The metal-oxide semiconductor (MOS) of described n type semiconductor layer 144 can be the transparency electrode of described solid luminescent source 14 light-emitting diodes, in order to be electrically connected described thin-film transistor 16.Described thin-film transistor 16 is positioned at a side of described solid luminescent source 14 light-emitting diodes, and the gate electrode that described thin-film transistor 16 has (Gate Electrode) the 161st is downward arranged on described substrate 12, and the source electrode that described thin-film transistor 16 has (Source Electrode) 162 and drain electrode (Drain Electrode) the 163rd, towards top, in order to coordinate the flip chip structure that is electrically connected described solid luminescent source 14 light-emitting diodes.Between described solid luminescent source 14 and described thin-film transistor 16, having an insulating barrier (Insulation Layer) 164 arranges, described insulating barrier 164 is also covered in the top of described gate electrode 161 and an active layer (Active Layer) 165 is set on described insulating barrier 164, and described source electrode 162 and described drain electrode 163 are set on described active layer 165.Described insulating barrier 164 separates described gate electrode 161 and described source electrode 162 and described drain electrode 163 in described thin-film transistor 16, and is electrically connected with described solid luminescent source 14 light-emitting diodes by described source electrode 162 or described drain electrode 163.In the first embodiment, described source electrode 162 or described drain electrode 163 are connected with described solid luminescent source 14 light-emitting diodes, are to connect by described n type semiconductor layer 144.When described n type semiconductor layer 144 is metal-oxide semiconductor (MOS), described source electrode 162 or described drain electrode 163 are connected with described n type semiconductor layer 144.When transparency electrode that described n type semiconductor layer 144 is metal-oxide semiconductor (MOS), described source electrode 162 or described drain electrode 163 are connected with the N-type transparency electrode of described n type semiconductor layer 144.When the described N-type electrode 145 of metal is set on described n type semiconductor layer 144, described source electrode 162 or described drain electrode 163 are connected with described N-type electrode 145.In the same manner, described source electrode 162 or described drain electrode 163 are connected with described solid luminescent source 14 light-emitting diodes, also can be by different circuit design, described source electrode 162 or described drain electrode 163 and the described p type semiconductor layer 142 of described solid luminescent source 14 light-emitting diodes or the transparency electrode of described p type semiconductor layer 142 or described P type electrode 141 are connected.Luminescent layer 143 materials of described solid luminescent source 14 light-emitting diodes, be selected from tellurium selenium magnesium zinc cadmium (CdZnMgSeTe), InGaP aluminium (AlGaInP), Gallium indium arsenide aluminium (AlInGaAs), indium gallium nitride aluminium (AlInGaN), zinc oxide (ZnO), zinc oxide gallium indium IGZO or SiGe (SiGe) one of them.
Described thin-film transistor 16 is polycrystalline silicon semiconductor film transistor or oxide semiconductor thin-film transistor, the described active layer 165 of described thin-film transistor 16 can be selected from metal-oxide semiconductor (MOS), low temperature polycrystalline silicon (Low Temperature Poly Silicon, LTPS), amorphous silicon (Amorphous Silicon, a-Si).Described metal-oxide semiconductor (MOS) is selected from amorphism metal-oxide semiconductor (MOS), polycrystallinity metal-oxide semiconductor (MOS), crystallinity metal-oxide semiconductor (MOS), crystallite metal-oxide semiconductor (MOS) or nano-metal-oxide semiconductor.The described active layer 165 of described thin-film transistor 16 includes one of them of indium (In), gallium (Ca), aluminium (Al), zinc (Zn), cadmium (Cd), calcium (Ca), magnesium (Mg), tin (Sn) or lead (Pb).Preferably, described active layer 165 is to be indium oxide gallium zinc (Indium Gallium Zinc Oxide, IGZO), and therefore described active layer 165 can be used as the transparency electrode of described solid luminescent source 14 light-emitting diodes.The optional autoxidation silicon of described insulating barrier 164 (SiOx) of described thin-film transistor 16, silicon oxynitride (SiON), silicon nitride (SiNx), hafnium oxide (HfOx), aluminium oxide (AlOx), tantalum oxide (Ta2O5) or barium strontium titanate (BaSrTiOx).The described source electrode 162 of described thin-film transistor 16 or described drain electrode 163 have at least an electrode to include oxide transparent electrode or a metal electrode or a nonmetal transparency electrode.Described oxide transparent electrode is as tin indium oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO), indium oxide gallium zinc (IGZO), zinc oxide aluminum (Al-doped Zn Oxide, AZO) or tin-antiomony oxide (Antimony Tin Oxide, ATO).Described at least one metal of metal electrode composition is selected from nickel (Ni), titanium (Ti), chromium (Cr), aluminium (Al), gold (Au), silver (Ag), molybdenum (Mo), copper (Cu), platinum (Pt), palladium (Pd), cobalt (Co), tungsten (W) or alloy wherein.Described nonmetal transparency electrode comprises Graphene (Graphene), CNT (carbon nano-tube) (Carbon Nano Tubes, CNT) or graphite granule (Graphite Powder).Solid-state luminous display 10 described in above-mentioned the first execution mode, by oxide semiconductor, nitride-based semiconductor, phosphide semiconductor, arsenide semiconductor or the compound semiconductor materials characteristic of described solid luminescent source 14 light-emitting diodes, avoid producing in processing procedure deteriorated problem.Meanwhile, the flip chip structure setting in described solid luminescent source 14, can improve radiating efficiency and increase the stability of described solid-state luminous display 10.
It referring again to Fig. 2, is the assembled sectional view of the second execution mode of crystal covering type solid-state luminous display of the present invention.It comprises a substrate 22, a plurality of solid luminescents source (Solid State Lighting) 24 and plurality of films transistor (Thin Film Transistor) 26 described solid-state luminous display 20.On the surface of described substrate 22, be provided with an insulating barrier 222, described solid luminescent source 24 and described thin-film transistor 26 are set on described insulating barrier 222.Described solid luminescent source 24 is for light-emitting diode and be the light-emitting diode of a P-N type, and it comprises a P type electrode 241, p type semiconductor layer 242, luminescent layer 243, oxide semiconductor layer 244 and a N-type electrode 245.Compared to described solid-state luminous display 10, identically be that described solid luminescent source 24 light-emitting diodes are all flip chip structure, be that described p type semiconductor layer 242 is positioned at below towards described substrate 22, described luminescent layer 243 (or n type semiconductor layer) is positioned at described p type semiconductor layer 242 tops, and described oxide semiconductor layer 244 is set on described luminescent layer 243.Compared to described solid-state luminous display 10, difference is that described solid luminescent source 24 is to be connected and fixed on described substrate 22 with described N-type electrode 245, and described N-type electrode 245 again by a via 249 with 242 insulation of described p type semiconductor layer with described luminescent layer 243 or described oxide semiconductor layer 244 is connected.When described luminescent layer 243 is during for N type semiconductor, described N-type electrode 245 is connected (as shown in Figure 2) by described via 249 with described luminescent layer 243.When described oxide semiconductor layer 244 is metal-oxide semiconductor (MOS), described N-type electrode 245 is connected (in Fig. 2, not indicating) by described via 249 with described oxide semiconductor layer 244.In addition, between described p type semiconductor layer 242 and described N-type electrode 245, still there is the setting that can increase described solid luminescent source 24 light-emitting diode luminous efficiencies, except being same as described solid luminescent source 14, have a contact layer 246 and a current-diffusion layer 247, and there is Bragg reflecting layer (the Distributed Bragg Reflector Layer of an insulation, DBR Layer) 248 arrange, in order to more to promote luminous usefulness.The setting of the described N-type electrode 245 in described thin-film transistor 26 cooperation described solid luminescent sources 24 on described substrate 22, the described source electrode 262 of described thin-film transistor 26, described drain electrode 263 are arranged on described substrate 22, and described gate electrode 261 is arranged at the top of described thin-film transistor 26, thereby on described substrate 22, reach electrically connect with described N-type electrode 245 by described source electrode 262 or described drain electrode 263.The described source electrode 262 of described thin-film transistor 26 and described drain electrode 263 tops are to be an active layer 265, and described active layer 265 tops are to be an insulating barrier 264, and described insulating barrier 264 tops arrange described gate electrode 161.
In addition, described solid luminescent source 14 light-emitting diodes of the first execution mode further comprise at least one fluorescent material 18, and described fluorescent material 18 is positioned at the same side with described solid luminescent source 14 on described substrate 12.As shown in Figure 3, described fluorescent material 18 is encapsulated on described n type semiconductor layer 144 and forms fluorescence coating, and in described fluorescence coating, described fluorescent material 18 is positioned at the same side with described solid luminescent source 14 light-emitting diodes on described substrate 12.The irradiation of described fluorescent material 18 by described solid luminescent source 14 is to show different color of light.On described fluorescent material 18, further comprise a colored filter (not indicating in figure), at described fluorescent material 18, mix and use to form after white light, by described colored filter, filter to show three kinds of different color of light of red, green, blue.Described solid luminescent source 14 light-emitting diodes can send ultraviolet light, blue light, blue green light, green glow or ruddiness, in order to the required color of light of described fluorescent material 18 allotment of the different colours of arranging in pairs or groups.The collocation of wherein said solid luminescent source 14 LED color light and described fluorescent material 18 colors, again with blue LED collocation green and red fluorescence powder 18, or with the fluorescent material 18 of ultraviolet light-emitting diodes collocation red, green, blue for better selection.Described fluorescent material 18 can be a fluorescent plate 182, described fluorescent plate 182 is arranged at a side or the upper and lower both sides (as shown in Figure 4) of described solid-state luminous display 10, be that described fluorescent plate 182 is positioned on the light path of described solid-state luminous display 10, form long distance fluorescent plate 182 structures.
Crystal covering type solid-state luminous display of the present invention, material behavior and flip chip structure by described solid luminescent source light-emitting diode arrange, can effectively solve positive type organic light emitting diode display and on processing procedure, easily be subject to the deteriorated problem of environmental impact generation organic material, make the processing procedure of active display convenient, promote stability and the useful life of using.
In addition, those skilled in the art also can do other and change in spirit of the present invention, and certainly, the variation that these are done according to spirit of the present invention, within all should being included in the present invention's scope required for protection.
Claims (25)
1. a crystal covering type solid-state luminous display, it comprises a substrate, a plurality of solid luminescents source and plurality of films transistor, it is characterized in that: described solid luminescent source and described thin-film transistor are adjacent to be arranged on described substrate, described solid luminescent source is to be a light-emitting diode, the light-emitting diode in described solid luminescent source is to be arranged on described substrate with flip chip structure, and described thin-film transistor is by source electrode or drain electrode and described solid luminescent source light-emitting diode electrically connect.
2. crystal covering type solid-state luminous display as claimed in claim 1, it is characterized in that: on the surface of described substrate, be provided with a resilient coating, described resilient coating is to be buffer insulation layer, and described solid luminescent source and described thin-film transistor are set on described resilient coating.
3. crystal covering type solid-state luminous display as claimed in claim 1, is characterized in that: described baseplate material be for sapphire, silicon, silicon-on-insulator, glass, gallium nitride, zinc oxide or plastics one of them.
4. crystal covering type solid-state luminous display as claimed in claim 1, it is characterized in that: described solid luminescent source light-emitting diode is selected from oxide semiconductor, nitride-based semiconductor, phosphide semiconductor, arsenide semiconductor or compound semiconductor, described compound semiconductor comprises III-V family, II-VI family or IV-IV family semiconductor.
5. crystal covering type solid-state luminous display as claimed in claim 1, it is characterized in that: described solid luminescent source light-emitting diode is the light-emitting diode of a P-N type, it comprises a P type electrode, a p type semiconductor layer, a luminescent layer, a n type semiconductor layer and a N-type electrode, described p type semiconductor layer top arranges described luminescent layer, described n type semiconductor layer is set on described luminescent layer, described N-type electrode is set on described n type semiconductor layer again, and described p type semiconductor layer below is connected on described substrate by described P type electrode.
6. crystal covering type solid-state luminous display as claimed in claim 5, it is characterized in that: described n type semiconductor layer is metal-oxide semiconductor (MOS), described metal-oxide semiconductor (MOS) is zinc oxide or zinc oxide gallium indium, and described metal-oxide semiconductor (MOS) is the transparency electrode of described solid luminescent source light-emitting diode.
7. crystal covering type solid-state luminous display as claimed in claim 5, is characterized in that: described n type semiconductor layer is compound semiconductor, and described compound semiconductor is zinc selenide, GaAs, AlGaInP or the indium gallium nitride aluminium in III-V family semiconductor.
8. crystal covering type solid-state luminous display as claimed in claim 5, is characterized in that: between described p type semiconductor layer and described P type electrode, further comprise a contact layer and a current-diffusion layer.
9. crystal covering type solid-state luminous display as claimed in claim 5, is characterized in that: described luminescent layer material, be selected from tellurium selenium magnesium zinc cadmium, InGaP aluminium, Gallium indium arsenide aluminium, indium gallium nitride aluminium, zinc oxide, zinc oxide gallium indium or SiGe one of them.
10. crystal covering type solid-state luminous display as claimed in claim 1, it is characterized in that: described thin-film transistor is positioned at a side of described solid luminescent source light-emitting diode, the gate electrode that described thin-film transistor has is arranged on described substrate, on described gate electrode, there is an insulating barrier setting, an active layer is set on described insulating barrier, source electrode and drain electrode that described thin-film transistor has are set on described active layer, and described source electrode or described drain electrode and described solid luminescent source light-emitting diode are electrically connected.
11. crystal covering type solid-state luminous displays as claimed in claim 10, is characterized in that: described source electrode or described drain electrode are crossed logical described n type semiconductor layer, described p type semiconductor layer, described transparency electrode, described N-type electrode or described P type electrode and described solid luminescent source light-emitting diode is electrically connected.
12. crystal covering type solid-state luminous displays as claimed in claim 10, it is characterized in that: described active layer is selected from metal-oxide semiconductor (MOS), low temperature polycrystalline silicon, amorphous silicon, described metal-oxide semiconductor (MOS) is selected from amorphism metal-oxide semiconductor (MOS), polycrystallinity metal-oxide semiconductor (MOS), crystallinity metal-oxide semiconductor (MOS), crystallite metal-oxide semiconductor (MOS) or nano-metal-oxide semiconductor.
13. crystal covering type solid-state luminous displays as claimed in claim 12, is characterized in that: described active layer includes one of them of indium, gallium, aluminium, zinc, cadmium, calcium, magnesium, tin or lead.
14. crystal covering type solid-state luminous displays as claimed in claim 13, is characterized in that: described active layer is to be indium oxide gallium zinc, and described active layer is as the transparency electrode of described solid luminescent source light-emitting diode.
15. crystal covering type solid-state luminous displays as claimed in claim 10, is characterized in that: described insulating barrier is selected from silica, silicon oxynitride, silicon nitride, hafnium oxide, aluminium oxide, tantalum oxide or barium strontium titanate.
16. crystal covering type solid-state luminous displays as claimed in claim 10, is characterized in that: described source electrode or described drain electrode have at least an electrode to include oxide transparent electrode or a metal electrode or a nonmetal transparency electrode.
17. crystal covering type solid-state luminous displays as claimed in claim 16, is characterized in that: described oxide transparent electrode is as tin indium oxide, indium zinc oxide, indium oxide gallium zinc, zinc oxide aluminum or tin-antiomony oxide.
18. crystal covering type solid-state luminous displays as claimed in claim 16, is characterized in that: described at least one metal of metal electrode composition is selected from nickel, titanium, chromium, aluminium, gold, silver, molybdenum, copper, platinum, palladium, cobalt, tungsten or alloy wherein.
19. crystal covering type solid-state luminous displays as claimed in claim 16, is characterized in that: described nonmetal transparency electrode comprises Graphene, CNT (carbon nano-tube) or graphite granule.
20. crystal covering type solid-state luminous displays as claimed in claim 1, it is characterized in that: described solid luminescent source is to be the light-emitting diode of a P-N type, it comprises a P type electrode, a p type semiconductor layer, a luminescent layer, an oxide semiconductor layer and a N-type electrode, described N-type electrode is connected on described substrate, and by being connected with described luminescent layer or described oxide semiconductor layer with a via of described p type semiconductor layer insulation.
21. crystal covering type solid-state luminous displays as claimed in claim 20, is characterized in that: between described p type semiconductor layer and described N-type electrode, have the Bragg reflecting layer of a contact layer, a current-diffusion layer and an insulation.
22. crystal covering type solid-state luminous displays as claimed in claim 20, it is characterized in that: described thin-film transistor is set on described substrate, on the described source electrode of described thin-film transistor and described drain electrode, be to be an active layer, on described active layer, be to be an insulating barrier, described gate electrode is set on described insulating barrier, and described source electrode and described drain electrode are reached electrically connect with described N-type electrode on described substrate.
23. crystal covering type solid-state luminous displays as claimed in claim 1, is characterized in that: described solid luminescent source further comprises at least one fluorescent material, and described fluorescent material and described solid luminescent source are positioned at the same side on described substrate.
24. crystal covering type solid-state luminous displays as claimed in claim 23, is characterized in that: described fluorescent material is a fluorescent plate, and described fluorescent plate is positioned on the light path of described solid-state luminous display, form a long distance fluorescent plate structure.
25. crystal covering type solid-state luminous displays as claimed in claim 23, is characterized in that: on described fluorescent material, further comprise a colored filter.
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