CN104104076A - Low temperature voltage compensation mechanism - Google Patents
Low temperature voltage compensation mechanism Download PDFInfo
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- CN104104076A CN104104076A CN201310152463.5A CN201310152463A CN104104076A CN 104104076 A CN104104076 A CN 104104076A CN 201310152463 A CN201310152463 A CN 201310152463A CN 104104076 A CN104104076 A CN 104104076A
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- voltage
- thermistor
- control unit
- low temperature
- compensation mechanism
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Abstract
The invention discloses a low temperature voltage compensation mechanism, which comprises a voltage source, a voltage-dividing resistor, a thermal resistor, a protection resistor and a control unit, wherein the voltage source provides a power supply voltage; the voltage-dividing resistor and the thermal resistor are coupled to form a serial state, a node is defined at the coupling place, and the voltage-dividing resistor and the thermal resistor which form a serial state form a parallel state with the voltage source; the protection resistor and the control unit are coupled to form a serial state, the control unit is coupled at the node, and the protection resistor and the control unit which form a serial state form a parallel state with the voltage source. When the voltage of the node is greater than the preset voltage value, the control unit is triggered to enable the protection resistor to form a circuit conduction state, and as the protection resistor, the voltage-dividing resistor and the thermal resistor are in parallel state, the entire resistance of the region can be reduced, compensation action is then carried out on the power supply voltage, and a power supply voltage level which is stable relatively can be provided.
Description
Technical field
The invention relates to a kind of design of employs power supply, and particularly relevant for a kind of power supply unit that possesses low temperature voltage compensation mechanism.
Background technology
Current various integrated circuit (IC) assembly all has overheat protector function substantially with Protective IC itself; so; in actual applications; integrated circuit also must with plural peripheral circuit cooperating; and in periphery circuit design, can be applied to the electronic devices and components that various caloric values are higher, as field-effect transistor etc.And the temperature of these high febrifacient electronic devices and components often can surpass the temperature of integrated circuit, caused before the effect of IC self overheat protector Function, these high heat generation electronic devices and components have burnt, thereby cause unnecessary loss.
But, except high temperature easily causes the damage of electronic devices and components, under the situation of low temperature, also easily causing the situation that provides the circuit of voltage to have misoperation by electric capacity to occur, is mainly because the voltage for being provided by electric capacity easily rises under low temperature situation, causes spread of voltage.
Summary of the invention
In view of this, the object of this invention is to provide a kind of power supply unit that possesses low temperature voltage compensation mechanism, guarantee under low temperature environment, VCC voltage to be compensated, so that metastable VCC voltage quasi position to be provided, and then guarantee power supply unit regular event.
For reaching above-mentioned or other object, the present invention proposes a kind of low temperature voltage compensation mechanism, it includes a voltage source provides supply power voltage, couple the divider resistance and the thermistor that form series connection, and at the place of coupling, be defined as a node, and the divider resistance and the thermistor that form series connection aspect are formation aspect in parallel with voltage source.Couple the protective resistance and the control unit that form series connection, control unit is also coupled on node, and the protective resistance and the control unit that form series connection aspect are formation aspect in parallel with this voltage source.
In sum; when the voltage of node is greater than a predeterminated voltage value; control unit will be triggered and make protective resistance form circuit turn-on state; because protective resistance is kenel in parallel with divider resistance and thermistor; therefore can reduce the overall resistance in this region; and then supply power voltage is made to compensating movement, so that metastable supply power voltage level to be provided.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the first preferred embodiment of the present invention;
Fig. 2 is the schematic diagram of the second preferred embodiment of the present invention; And
Fig. 3 is the schematic diagram of the 3rd preferred embodiment of the present invention.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and coordinate appended graphicly, be described in detail below.
Refer to shown in Fig. 1, it is the schematic diagram of the first preferred embodiment of the present invention.The present invention includes a voltage source 100, a divider resistance 110, a thermistor 120, a protective resistance 130 and a control unit 140.
Voltage source 100 is main so that the supply power voltage Vcc of direct current to be provided, and voltage source 100 its main first again energy being discharged after electric capacity by energy storage, to offer the power source with peripheral circuit 160.
Divider resistance 110 can couple and form the aspect of connecting with thermistor 120, and has a node 150 at the place's of coupling definable, and the divider resistance 110 and the thermistor 120 that wherein form series connection aspect are formation aspect in parallel with voltage source 100.Thermistor 120 in the present embodiment is mainly negative tempperature coefficient thermistor, and the electric current of voltage source 100 can be successively first sees through after divider resistance 110 again to thermistor 120, finally ground connection again.
Protective resistance 130 and control unit 140 also can couple the aspect that forms series connection, and the protective resistance 130 and the control unit 140 that form series connection aspect be formation aspect in parallel with voltage source 100, and have formation ground connection.Wherein, protective resistance 130 is all to have identical effect with the priority of the link order of control unit 140 at this, therefore do not repeated.And control unit 140 is coupled on node 150 in addition, and control unit 140 can be MOSFET or other equivalent assembly.
When ambient temperature is not during lower than a preset temperature value, the magnitude of voltage of node 150 cannot cannot make higher than predeterminated voltage value control unit 140 form the state triggering; Anti-is down to after preset temperature value when ambient temperature, relatively can make the voltage of node 150 higher than predeterminated voltage value, can make by this to control single 140 yuan and form the state triggering, and then 130 states that can form circuit turn-on of protective resistance.Because protective resistance 130 is kenel in parallel with divider resistance 110 and thermistor 120, thus the overall resistance in this region can be reduced, and then supply power voltage is made to compensating movement, so that metastable supply power voltage level to be provided.
Refer to shown in Fig. 2, it is the schematic diagram of the second preferred embodiment of the present invention.The present embodiment is only described and not the existing together of last embodiment, and all the other are identical locates no longer to be repeated.The thermistor 120 of the present embodiment is mainly semistor, and the electric current of voltage source 100 can be successively first sees through after thermistor 120 again to divider resistance 110, finally ground connection again.When ambient temperature, be down to after preset temperature value, also relatively can make the voltage of node 150 higher than predeterminated voltage value, can make by this to control single 140 yuan and form the state triggering, and then 130 states that can form circuit turn-on of protective resistance.Because protective resistance 130 is kenel in parallel with divider resistance 110 and thermistor 120, thus the overall resistance in this region can be reduced, and then supply power voltage is made to compensating movement, so that metastable supply power voltage level to be provided.
Refer to shown in Fig. 3, it is the schematic diagram of the 3rd preferred embodiment of the present invention.The present embodiment is only described and not the existing together of front two embodiment, and all the other are identical locates no longer to be repeated.The present embodiment replaces divider resistance 110 and the thermistor 120 of front two embodiment with the first thermistor 122 and the second thermistor 124.First thermistor 122 of the present embodiment is mainly semistor, the second 124 of thermistors are mainly negative tempperature coefficient thermistor, and the electric current of voltage source 100 can be successively first sees through again to the second thermistor 124 after the first thermistor 122, last ground connection again.When ambient temperature, be down to after preset temperature value, also relatively can make the voltage of node 150 higher than predeterminated voltage value, can make by this to control single 140 yuan and form the state triggering, and then 130 states that can form circuit turn-on of protective resistance.Because protective resistance 130 is kenel in parallel with the first thermistor 122 and the second thermistor 124, thus the overall resistance in this region can be reduced, and then supply power voltage is made to compensating movement, so that metastable supply power voltage level to be provided.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention ought be that the scope that claim defines is as the criterion.
Claims (9)
1. a low temperature voltage compensation mechanism, is characterized in that including:
One voltage source, is to provide a supply power voltage;
One divider resistance;
One thermistor, it is to couple and form the aspect of connect with this divider resistance, and at the place of coupling, is defined as a node, and this divider resistance and this thermistor that form series connection aspect are formation aspect in parallel with this voltage source;
One protective resistance; And
One control unit, it is to couple and form the aspect of connect with this protective resistance, and is coupled to this node, and this protective resistance and this control unit that form series connection aspect are formation aspect in parallel with this voltage source.
2. low temperature voltage compensation mechanism as claimed in claim 1, wherein this thermistor is negative tempperature coefficient thermistor, this voltage source sees through this divider resistance and this thermistor ground connection successively.
3. low temperature voltage compensation mechanism as claimed in claim 1, wherein this thermistor is semistor, this voltage source sees through this thermistor and this divider resistance ground connection successively.
4. low temperature voltage compensation mechanism as claimed in claim 2 or claim 3, when wherein the voltage of this node is greater than a predeterminated voltage value, this control unit will be triggered and make this protective resistance form circuit turn-on state.
5. low temperature voltage compensation mechanism as claimed in claim 4, wherein this control unit is to be MOSFET.
6. a low temperature voltage compensation mechanism, is characterized in that including:
One voltage source, is to provide a supply power voltage;
One first thermistor;
One second thermistor, it is to couple and form the aspect of connect with this first thermistor, and at the place of coupling, is defined as a node, and this first thermistor and this second thermistor that form series connection aspect are formation aspect in parallel with this voltage source;
One protective resistance; And
One control unit, it is to couple and form the aspect of connect with this protective resistance, and is coupled to this node, and this protective resistance and this control unit that form series connection aspect are formation aspect in parallel with this voltage source.
7. low temperature voltage compensation mechanism as claimed in claim 6, wherein this first thermistor is semistor, and this second thermistor is negative tempperature coefficient thermistor, this voltage source sees through this first thermistor and this second thermistor ground connection successively.
8. low temperature voltage compensation mechanism as claimed in claim 7, when wherein the voltage of this node is greater than a predeterminated voltage value, this control unit will be triggered and make this protective resistance form circuit turn-on state.
9. low temperature voltage compensation mechanism as claimed in claim 8, wherein this control unit is to be MOSFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310152463.5A CN104104076A (en) | 2013-04-15 | 2013-04-15 | Low temperature voltage compensation mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310152463.5A CN104104076A (en) | 2013-04-15 | 2013-04-15 | Low temperature voltage compensation mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104104076A true CN104104076A (en) | 2014-10-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201310152463.5A Pending CN104104076A (en) | 2013-04-15 | 2013-04-15 | Low temperature voltage compensation mechanism |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2176442Y (en) * | 1993-08-14 | 1994-09-07 | 关学忠 | Automatic low temperature protecter of vehicle engine |
| JP2001286066A (en) * | 2000-03-30 | 2001-10-12 | Tdk Corp | Protection circuit for secondary cell |
| CN101164216A (en) * | 2005-04-08 | 2008-04-16 | 优昵森电子有限公司 | Circuit and chip for protecting battery, method of manufacturing the same and battery pack having the same |
| CN103036203A (en) * | 2011-10-10 | 2013-04-10 | 鸿富锦精密工业（深圳）有限公司 | Protection circuit |
-
2013
- 2013-04-15 CN CN201310152463.5A patent/CN104104076A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2176442Y (en) * | 1993-08-14 | 1994-09-07 | 关学忠 | Automatic low temperature protecter of vehicle engine |
| JP2001286066A (en) * | 2000-03-30 | 2001-10-12 | Tdk Corp | Protection circuit for secondary cell |
| CN101164216A (en) * | 2005-04-08 | 2008-04-16 | 优昵森电子有限公司 | Circuit and chip for protecting battery, method of manufacturing the same and battery pack having the same |
| CN103036203A (en) * | 2011-10-10 | 2013-04-10 | 鸿富锦精密工业（深圳）有限公司 | Protection circuit |
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Application publication date: 20141015 |
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| WD01 | Invention patent application deemed withdrawn after publication |