CN104104012A - InP-based intermediate infrared InAsBi quantum well structure - Google Patents
InP-based intermediate infrared InAsBi quantum well structure Download PDFInfo
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- CN104104012A CN104104012A CN201410247131.XA CN201410247131A CN104104012A CN 104104012 A CN104104012 A CN 104104012A CN 201410247131 A CN201410247131 A CN 201410247131A CN 104104012 A CN104104012 A CN 104104012A
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- quantum well
- inp
- well structure
- inasbi
- infrared
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Abstract
The invention relates to an InP-based intermediate infrared InAsBi quantum well structure. InAsBi serves as a potential well layer of the quantum well structure, and In0.53Ga0.47As matched with InP or InxGa1-xAs (x is greater than 0 and less than 0.53) with a lattice constant less than that of InP serves as a barrier layer of the quantum well structure. An InP substrate adopted by the quantum well structure has excellent substrate quality compared with a GaSb substrate, so that the preparation cost of a device can be lowered; a quantum well adopts InAsBi as the potential well layer, so that middle infrared band light emitting can be achieved due to a narrow band gap; and compared with a quantum cascade laser prepared by utilizing sub-interband transition, a semiconductor light source prepared by utilizing quantum well interband transition has the advantages of low threshold current and high electro-optical conversion efficiency.
Description
Technical field
The invention belongs to Semiconductor Optoeletronic Materials field, particularly infrared InAsBi quantum well structure in a kind of InP base.
Background technology
Middle-infrared band has comprised many important molecule fundamental frequency characteristic spectral lines, there is very little atmosphere optical absorption characteristics, the light sources such as the laser of middle-infrared band and light-emitting diode all have very important application prospect civilian with military field, as civilian environmental monitoring, chemical substance are surveyed and the field such as medical diagnosis, and the laser radar of military domain, anti-ly hit target identification etc.The semiconductor laser of being made by semi-conducting material is because the advantages such as efficiency is high, volume is little, lightweight especially receive publicity.In realization, the mode of infrared semiconductor laser mainly contains three kinds of approach: I type quantum-well laser, interband cascade lasers (Interband Cascade Laser, ICL) and quantum cascade laser (Quantum Cascade Laser, QCL).Wherein, I type quantum-well laser is as a kind of relatively traditional scheme, its structure is relatively simple, preparation condition is relatively ripe, by electric current, inject the energy difference of the quasi-Fermi level in electronics and hole is increased to the energy that makes to be greater than institute's radiation photon, thereby realize the reversion of charge carrier, the voltage of laser only need can make laser realize work a little more than voltage corresponding to radiation photon energy in theory, makes device have higher transformation efficiency.At present, the InGaAsSb/AlGa on GaSb substrate (In) AsSb quantum-well laser is that main middle-infrared band I type quantum well semiconductor laser device is realized means, at a plurality of wave bands below 3.4 microns, has realized room temperature continuous-wave lasing.But the growth of antimonide multicomponent material exists mutually not solution crack, and device etching technics also has larger difficulty, high-quality GaSb substrate is also difficult to obtain.
Quantum-well laser on InP substrate has more ripe materials and devices technique, mate with InP substrate lattice or InGaAs (P) the system quantum-well laser of strain compensation can be in 1.3 microns and 1.55 microns of work of near-infrared communication band, under the promotion of optical-fibre communications, obtained develop rapidly, comparatively ripe.By the In component in increase quantum well and the thickness of potential well, can make the emission wavelength of InGaAs quantum well extend into middle-infrared band scope to long wave.But be subject to the impact of quantum well strain and the restriction of critical thickness, the long wavelength who realizes is at present about 2.4 microns.By construct the what is called that lattice constant is larger than InP " virtual substrate " at InP Grown resilient coating, and then growth InAs quantum-well laser structure, can make laser emission wavelength reach near longer 3 microns.But mutation quantum-well laser has very high requirement to Material growth, and using InAs material and as the quantum-well laser of potential well, be subject to energy gap (0.35eV) restriction of InAs material, emission wavelength is difficult to break through 3 microns.
In recent years, rare bismuth semi-conducting material has caused in the world more and more concern because having the important characteristic of a lot of uniquenesses.It is found that after adding bismuth in Dang III-V family material and can produce the band-gap narrowing that is similar to rare nitrogen material.And bismuth element is mainly to valence band generation effect, very little to conduction band effect, hole mobility just reduces slightly along with the rising of bi concns, can as rare nitrogen material, significantly not reduce electron mobility and produce a large amount of non-radiative recombination centers.And play surfactant in the growth of bismuth element III-V family material under common growth temperature, be conducive to form smooth interface, the optical characteristics of reinforcing material.
Summary of the invention
Technical problem to be solved by this invention is to provide infrared InAsBi quantum well structure in a kind of InP base, and this quantum well structure adopts InAsBi as potential well layer, owing to having narrow band gap, can realize middle-infrared band luminous.
Infrared InAsBi quantum well structure in a kind of InP base of the present invention, adopts InAsBi as the potential well layer of quantum well structure, adopts the In mating with InP simultaneously
0.53ga
0.47the In that As or lattice constant are less than InP
xga
1-xas, 0<x<0.53 are as the barrier layer of quantum well structure.
Described quantum well structure is grown on InP substrate.
First grown InP resilient coating on described InP substrate.
Described quantum well structure can adopt InAs
0.95bi
0.05as potential well layer, adopt In
0.4ga
0.6as is as barrier layer.
Described quantum well structure is for adopting InAs
0.94bi
0.06as potential well layer, adopt In
0.53ga
0.47as is as barrier layer.
The band-to-band transition wavelength of described quantum well structure reaches middle-infrared band, is applicable in preparation the mid-infrared light source devices such as infrared quantum trap laser, light-emitting diode.
beneficial effect
The relative GaSb substrate of InP substrate of the present invention has preferably substrate quality, can reduce device preparation cost; Quantum well adopts InAsBi as potential well layer, owing to having narrow band gap, can realize middle-infrared band luminous; Utilize semiconductor light sources prepared by quantum well band-to-band transition to compare with utilizing the quantum cascade laser of intersubband transitions, have advantages of that threshold current is low, electro-optical efficiency is high.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the quantum well structure schematic diagram of embodiment 1;
Fig. 3 is the quantum well structure schematic diagram of embodiment 2.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment 1
The InAs that the preparation InP base emission wavelength of take is 3.1 microns
0.95bi
0.05double quantum well is example:
(1) will be at InP Grown InAs
0.95bi
0.05double quantum well structure, one deck 100nm InP resilient coating of first growing;
(2) the thick In of growth one deck 20nm
0.4ga
0.6as material is as barrier layer;
(3) the thick InAs of growth one deck 5nm
0.95bi
0.05material is as potential well layer;
(4) regrow the In that one deck 20nm is thick
0.4ga
0.6as material is as barrier layer;
(5) regrow the InAs that one deck 5nm is thick
0.95bi
0.05material is as the potential well layer of second quantum well;
(6) finally regrow the In that one deck 20nm is thick
0.4ga
0.6as material, as barrier layer, completes the growth of this double quantum well structure, and the room temperature luminous wavelength of quantum well is about 3.1 microns.
Embodiment 2
The InAs that the preparation InP base emission wavelength of take is 3.0 microns
0.94bi
0.06three quantum well are example:
(1) will be at InP Grown InAs
0.94bi
0.06three quantum well structures, one deck 100nm InP resilient coating of first growing;
(2) the thick In of growth one deck 15nm
0.53ga
0.47as material is as barrier layer;
(3) the thick InAs of growth one deck 4nm
0.94bi
0.06material is as potential well layer;
(4) regrow the In that one deck 15nm is thick
0.53ga
0.47as material is as barrier layer;
(5) be again cycled to repeat and carry out twice above-mentioned (3) and (4) process, complete the growth of this three quantum well structure, the room temperature luminous wavelength of quantum well is about 3.0 microns.
Claims (5)
1. an infrared InAsBi quantum well structure in InP base, is characterized in that: adopt InAsBi as the potential well layer of quantum well structure, adopt the In mating with InP simultaneously
0.53ga
0.47the In that As or lattice constant are less than InP
xga
1-xas, 0<x<0.53 are as the barrier layer of quantum well structure.
2. infrared InAsBi quantum well structure in a kind of InP base according to claim 1, is characterized in that: described quantum well structure is grown on InP substrate.
3. infrared InAsBi quantum well structure in a kind of InP base according to claim 1, is characterized in that: described quantum well structure is for adopting InAs
0.95bi
0.05as potential well layer, adopt In
0.4ga
0.6as is as barrier layer.
4. infrared InAsBi quantum well structure in a kind of InP base according to claim 1, is characterized in that: described quantum well structure is for adopting InAs
0.94bi
0.06as potential well layer, adopt In
0.53ga
0.47as is as barrier layer.
5. infrared InAsBi quantum well structure in a kind of InP base according to claim 1, is characterized in that: the band-to-band transition wavelength of described quantum well structure reaches middle-infrared band.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109217109A (en) * | 2018-08-29 | 2019-01-15 | 中国科学院半导体研究所 | Quantum well structure, epitaxial structure based on digital alloy potential barrier and preparation method thereof |
| RU189723U1 (en) * | 2018-12-21 | 2019-05-31 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) | Crystal of a tunable quantum-cascade laser |
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| US20110204214A1 (en) * | 2010-02-21 | 2011-08-25 | Technion Research & Development Foundation Ltd. | Method and system for detecting light |
| US20110254471A1 (en) * | 2010-02-21 | 2011-10-20 | Technion Research & Development Foundation Ltd. | Light emitting system and method of fabricating and using the same |
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| CN103367575A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Rare bismuth semiconductor quantum well structure improved in heat stability and preparation method for rare bismuth semiconductor quantum well structure |
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2014
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| US20110204214A1 (en) * | 2010-02-21 | 2011-08-25 | Technion Research & Development Foundation Ltd. | Method and system for detecting light |
| US20110254471A1 (en) * | 2010-02-21 | 2011-10-20 | Technion Research & Development Foundation Ltd. | Light emitting system and method of fabricating and using the same |
| CN101982905A (en) * | 2010-09-25 | 2011-03-02 | 中国科学院上海微系统与信息技术研究所 | InP-based strained quantum well structure with pseudo-substrate and preparation method thereof |
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Non-Patent Citations (2)
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| I.C.SANDALL ET AL.: "Demonstration of InAsBi photoresponse beyond 3.5um", 《APPLIED PHYSICS LETTERS》 * |
| PRESTON T.WEBSTER ET AL.: "Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices", 《JOURNAL OF VACUUM SCIENCE &TECHNOLOGY B》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109217109A (en) * | 2018-08-29 | 2019-01-15 | 中国科学院半导体研究所 | Quantum well structure, epitaxial structure based on digital alloy potential barrier and preparation method thereof |
| RU189723U1 (en) * | 2018-12-21 | 2019-05-31 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) | Crystal of a tunable quantum-cascade laser |
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Application publication date: 20141015 |