CN104101949B - Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal - Google Patents
Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal Download PDFInfo
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- CN104101949B CN104101949B CN201410364388.3A CN201410364388A CN104101949B CN 104101949 B CN104101949 B CN 104101949B CN 201410364388 A CN201410364388 A CN 201410364388A CN 104101949 B CN104101949 B CN 104101949B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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Abstract
The invention discloses a cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal. The cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal comprises dielectric cylinders with high refractive index and background dielectric cylinders with low refractive index; panel dielectric cylinder cross connecting rods which are arranged in the cross direction and circular dielectric cylinders are connected to form into the dielectric cylinders with the high refractive index; the lattice constant of the square lattice is a; the width of the panel dielectric cylinders is 0.0558a; the semi-diameter of the cylinders is 0.31392a; the comparative value of the largest absolute forbidden band is 17.26755%. The photonic crystal has the advantages of belonging to the square lattice and being easy to achieve connection and coupling between different optical elements in an optical path and different optical paths and beneficial to reduction of costs, being large in absolute forbidden band and widely applied to large-scale integration optical path design.
Description
Technical field
The present invention relates to wide absolute band gap 2 D photon crystal.
Background technology
1987, the e.yablonovitch in U.S. bell laboratory discuss how to suppress spontaneous radiation and
The s.john of princeton university proposes photonic crystal (photonic crystal) independently of one another in discussion light subregion
Concept.Photonic crystal is the structure of matter that a kind of dielectric material is in periodic arrangement in space, generally by two kinds or two kinds
More than there is the artificial lens of differing dielectric constant material composition.
In frequency domain, te or tm ripple that any direction is propagated, the electromagnetic field density of states is that zero frequency separation is defined as photon
The complete forbidden band of te or tm of crystal, simultaneously the frequency separation for the complete forbidden band of te and tm be referred to as the absolute band gap of photonic crystal.
Design has the photonic crystal of complete forbidden band or absolute band gap, can effectively simply regulate and control macroscopical electromagnetic property of medium,
Including selecting wherein to propagate frequency band, pattern and the transmission path of electromagnetic wave, control the characteristics such as absorption or the radiation of its medium, be
Control photon motion, the basis of the various photonic devices of making.
For various photon crystal devices, forbidden photon band is wider, and the performance of device is better, and for example, forbidden photon band is got over
Width, then the working band of photon crystal wave-guide is wider, loss is less, the quality factor of photonic crystal resonant cavity and laser instrument
Higher, photonic crystal is better to the binding effect of spontaneous radiation, and the reflectivity of photon crystal reflecting mirror is more high.Have and prohibit completely
The photonic crystal of band and absolute band gap because all there is photon band gap to the light on the different directions of propagation, therefore have complete forbidden band with
The photonic crystal of absolute band gap receives extensive concern.
Traditionally, big relative forbidden band to be obtained, need using the non-tetragonal structure such as triangular crystal lattice, hexagonal lattice,
But in photonic crystal integrated optical circuit, light path can be made succinct using tetragonal structure, and be easy to provide the integrated of light path
Degree, and the absolute band gap width very little of traditional tetragonal photonic crystal, therefore have the tetragonal of big absolute band gap
It is the target that people pursue always that photonic crystal becomes.
Content of the invention
The purpose of the present invention is to overcome weak point of the prior art, provides one kind to be easy to light path integrated, definitely prohibits greatly
The new tetragonal photon crystal structure of bandwidth relative value.
For realizing object above, the present invention is achieved by the following technical programs.
The present invention includes high folding based on the big absolute band gap tetragonal photon crystal structure of cross connecting rod post and cylinder
Penetrate rate dielectric posts and low-refraction background media post, described high refractive index medium post is situated between by the flat board placed positioned at ten word directions
Matter post cross connecting rod connects circle dielectric posts composition；Described photon crystal structure is arranged to make up by tetragonal by cellular；Described
The distance of the low order end to right flat board connecting rod for the high order end of the left plate connecting rod of cellular is a；The lower flat board of described cellular is even
The distance of the top to upper flat plate connecting rod for the lowermost end of extension bar is a；The width d of described plating media post is 0.0558a, circle
The radius r of post is 0.31392a, and wherein a is the lattice paprmeter of tetragonal, and the relative value of corresponding maximum absolute band gap is
17.26755%；Described high refractive index medium is silicon, GaAs or titanium dioxide, and this high refractive index medium is silicon, the described back of the body
Scape medium is low refractive index dielectric, and described low refractive index dielectric is air, vacuum, magnesium fluoride or silica, this low refraction
Rate medium is air.
Described photon crystal structure includes high refractive index medium post and low-refraction background media post, and described height reflects
Rate dielectric posts connect circle dielectric posts by the plating media post cross connecting rod placed positioned at ten word directions and form；Described photon is brilliant
Body structure is arranged to make up by tetragonal by cellular；The high order end of the left plate connecting rod of described cellular is to right flat board connecting rod
The distance of low order end is a；The distance of the top to upper flat plate connecting rod for the lowermost end of the lower flat board connecting rod of described cellular is
a；The width of described plating media post is 0.055a≤d≤0.059a, the radius of described cylinder be 0.3096a≤r≤
0.3186a, wherein a are the lattice paprmeter of tetragonal, and the absolute band gap relative value of described photon crystal structure is more than 17%；Institute
Stating high refractive index medium is silicon, GaAs or titanium dioxide, and this high refractive index medium is silicon, and described background media is low refraction
Rate medium, described low refractive index dielectric is air, vacuum, magnesium fluoride or silica, and this low refractive index dielectric is air.
Described photon crystal structure includes high refractive index medium post and low-refraction background media post, and described height reflects
Rate dielectric posts connect circle dielectric posts by the plating media post cross connecting rod placed positioned at ten word directions and form；Described photonic crystal
Structure is arranged to make up by tetragonal by cellular；The high order end of the left plate connecting rod of described cellular is to right flat board connecting rod
The distance of right-hand member is a；The distance of the top to upper flat plate connecting rod for the lowermost end of the lower flat board connecting rod of described cellular is a；
The width of described plating media post is 0.055a≤d≤0.059a, and the radius of described cylinder is 0.3078a≤r≤0.3231a,
Wherein a is that the absolute band gap relative value of the photon crystal structure described in lattice paprmeter of tetragonal is more than 16.8%；Described high folding
Penetrating rate medium is silicon, GaAs or titanium dioxide, and this high refractive index medium is silicon, and described background media is situated between for low-refraction
Matter, described low refractive index dielectric is air, vacuum, magnesium fluoride or silica, and this low refractive index dielectric is air.
Described photon crystal structure includes high refractive index medium post and low-refraction background media post, and described height reflects
Rate dielectric posts connect circle dielectric posts by the plating media post cross connecting rod placed positioned at ten word directions and form；Described photon is brilliant
Body structure is arranged to make up by tetragonal by cellular；The high order end of the left plate connecting rod of described cellular is to right flat board connecting rod
The distance of low order end is a；The distance of the top to upper flat plate connecting rod for the lowermost end of the lower flat board connecting rod of described cellular is
a；The width of described plating media post is 0.055a≤d≤0.059a, and the radius of described cylinder is 0.306a≤r≤0.324a,
Wherein a is the lattice paprmeter of tetragonal, and the absolute band gap relative value of described photon crystal structure is more than 16.6%；Described high folding
Penetrating rate medium is silicon, GaAs or titanium dioxide, and this high refractive index medium is silicon, and described background media is situated between for low-refraction
Matter, described low refractive index dielectric is air, vacuum, magnesium fluoride or silica, and this low refractive index dielectric is air.
The photon crystal structure of the present invention can be widely applied in large-scale integrated light path design.It and prior art phase
Ratio has following good effect.
1. the photon crystal structure of the present invention has very big absolute band gap, be photonic crystal application provide bigger
Space, simultaneously also be photon crystal device design and manufacture bring bigger convenience and flexibility.
2. the photonic crystal of the present invention belongs to tetragonal, and light path is succinct, is easy to design it is easy to extensive light path is integrated；
3. between different optical elements and easy between different light paths in the light path of tetragonal photonic crystal of the present invention
In realizing connecting and coupling, advantageously reduce cost.
Brief description
Fig. 1 is the big absolute band gap square crystal lattice 2 D photon crystal structure based on cross connecting rod post and cylinder of the present invention
Schematic diagram.
Fig. 2 is the impact figure for absolute band gap relative value for the width of plating media post of the present invention.
Fig. 3 is the energy band diagram corresponding to maximum absolute band gap width relative value for the photon crystal structure of the present invention.
Fig. 4 is the argument structure figure of the photonic crystal maximum absolute band gap relative value shown in Fig. 1.
Specific embodiment
With reference to the accompanying drawings and detailed description the present invention is made with further details of elaboration.
The photon crystal structure of the present invention includes high refractive index medium post and low-refraction background media post, and whole photon is brilliant
Body structure is formed by tetragonal arrangement by cellular.Described high refractive index medium post is divided into two parts: circle dielectric posts and company
Connect the plating media post cross connecting rod placed positioned at ten word directions of round dielectric posts；Fig. 1 show a cellular of photonic crystal,
In figure dotted line represents the border of cellular, and this cellular is arranged to make up described photonic crystal by tetragonal；Described plating media post
Width d be 0.0558a, the radius r of cylinder is 0.31392a, and wherein a is the lattice paprmeter of tetragonal；High refractive index medium
For silicon, low refractive index dielectric is air, and the relative value of corresponding maximum absolute band gap is 17.26755%；Described plating media post
Width is 0.055a≤d≤0.059a, and the radius of described cylinder is 0.306a≤r≤0.324a, and wherein a is tetragonal
Lattice paprmeter；High refractive index medium is silicon, and low refractive index dielectric is air, the absolute band gap relative value of described photon crystal structure
More than 16.6%；The width of described plating media post is 0.055a≤d≤0.059a, and the radius of described cylinder is 0.3078a
≤ r≤0.3231a, wherein a are the lattice paprmeter of tetragonal；High refractive index medium is silicon, and low refractive index dielectric is air, institute
The absolute band gap relative value stating photon crystal structure is more than 16.8%；The width of described plating media post be 0.055a≤d≤
0.059a, the radius of described cylinder is 0.3096a≤r≤0.3186a, and wherein a is the lattice paprmeter of tetragonal；High refraction
Rate medium is silicon, and low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is more than 17%；Described
The distance of the low order end to right flat board connecting rod for the high order end of the left plate connecting rod of cellular is a；The lower flat board of described cellular is even
The distance of the top to upper flat plate connecting rod for the lowermost end of extension bar is a；Described high refractive index medium adopts silicon (si), arsenic
Gallium or titanium dioxide；Background media is low refractive index dielectric, and described low refractive index dielectric adopts vacuum, air, magnesium fluoride
Or silica.
Generally using the ratio of absolute band gap width and forbidden band centre frequency as energy gap inspection target, referred to as absolutely
To energy gap relative value.
Carry out substantial amounts of scrutiny using plane wave expansion method to obtain, maximum absolute band gap relative value is corresponding with it
Parameter.
Search research is optimized by steepest descent method to described photon crystal structure, maximum absolute band gap phase can be obtained
To value, concrete grammar is as follows:
(1) the first sweep limits determining two parameters is: the width d=(0.01a～0.2a) of plating media post, cylinder
Radius r=(0.1a～0.5a).
(2) coarse scanning is done based on plane wave expansion method, obtaining reasonable parameter d is 0.056a.
(3) high refractive index medium material adopts silicon, and low refractive index dielectric is air, and fixing d is 0.056a, based on plane wave
The method of development is scanned to r, obtains the result shown in Fig. 2.In Fig. 2, the value of r has in the range of 0.306～0.324 and compares
Big complete forbidden band, and have maximum absolute band gap relative value at r is equal to 0.31392a, it is gapratio1=17.26668%.
(4) high refractive index medium material adopts silicon, and low refractive index dielectric is air, and fixing r is 0.31392a, based on plane
Wave spread method is scanned to d, obtains optimal absolute band gap relative value gapratio2=17.26755%, and corresponding d value is
0.0558a.
(5) judge whether | (gapratio2-gapratio1)/(gapratio2+gapratio1) | is less than 1%, if it is not,
Then with the result of aforementioned each step, new round scanning is carried out to each parameter, until | (gapratio2-gapratio1)/
(gapratio2+gapratio1) | < 1% just terminates to search for, and finally obtains optimized absolute band gap relative value and its corresponding
Structural parameters.
The optimum results finally giving are: high refractive index medium adopts silicon, and low refractive index dielectric is air, d=
When 0.0558a, r=0.31392a, relative value=17.26755% of maximum absolute band gap.Its energy band diagram is as shown in figure 3, final
Photon crystal structure under structural parameters is as shown in figure 4, in figure dotted line represents the border of cellular.
Following 6 embodiments are provided according to result above:
Embodiment 1. high refractive index medium adopts silicon, and low refractive index dielectric is air, a=0.325, plating media post width
D=0.0558a=0.018135 micron, cylindrical radius r=0.31392a=0.102024 micron, obtained photonic crystal exhausted
It is (0.818722～0.688574) to forbidden band scope, the relative value of absolute band gap corresponds to 17.26755%.
Embodiment 2. high refractive index medium adopts silicon, and low refractive index dielectric is air, a=0.45, plating media post width d
=0.0558a=0.02511 micron, cylindrical radius r=0.31392a=0.141264 micron, obtained photonic crystal absolute
Forbidden band scope is (1.133615～0.95341), and the relative value of absolute band gap corresponds to 17.26755%.
Embodiment 3. high refractive index medium is adopted as silicon, and low refractive index dielectric is air, a=0.65, plating media post width
Degree d=0.0558a=0.03627 micron, cylindrical radius r=0.31392a=0.204048 micron, obtained photonic crystal
Absolute band gap scope is (1.637445～1.377148), and the relative value of absolute band gap corresponds to 17.26755%.
Embodiment 4. high refractive index medium adopts silicon, and low refractive index dielectric is air, a=0.35, plating media post width d
=0.56a=0.0196 micron, cylindrical radius r=0.32364a=0.113274 micron, the absolute taboo of obtained photonic crystal
Band scope is (0.893975～0.756888), and the relative value of absolute band gap corresponds to 16.60611%.
Embodiment 5. high refractive index medium adopts silicon, and low refractive index dielectric is air, a=0.475, plating media post width
D=0.0562a=0.026695 micron, cylinder half r=0.3204a=0.15219 micron, the absolute band gap of gained photonic crystal
Scope is (1.2073～1.020189), and the relative value of absolute band gap corresponds to 16.80116%.
Embodiment 6. high refractive index medium is adopted as silicon, and low refractive index dielectric is air, a=0.5, plating media post width
D=0.059a=0.0295 micron, cylindrical radius r=0.3125a=0.15625 micron, the absolute taboo of obtained photonic crystal
Band scope is (1.257292～1.060265), and the relative value of absolute band gap corresponds to 17.0011%.
Present invention described above all has improvements in specific embodiment and range of application, is not construed as to this
Bright restriction.
Claims (4)
1. a kind of big absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder is it is characterised in that described
Photon crystal structure includes high refractive index medium post and low-refraction background media post, and described high refractive index medium post is by being located at
The plating media post cross connecting rod that ten word directions are placed connects circle dielectric posts composition；Described photon crystal structure is just pressed by cellular
Square lattice arrangement is constituted；The distance of the low order end to right flat board connecting rod for the high order end of the left plate connecting rod of described cellular is a；
The distance of the top to upper flat plate connecting rod for the lowermost end of the lower flat board connecting rod of described cellular is a；Described plating media post
Width d be 0.0558a, the radius r of cylinder is 0.31392a, and wherein a is the lattice paprmeter of tetragonal, corresponding maximum definitely
The relative value of forbidden band is 17.26755%；Described high refractive index medium is silicon, and described low refractive index dielectric is air.
2. a kind of big absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder is it is characterised in that described
Photon crystal structure includes high refractive index medium post and low-refraction background media post, and described high refractive index medium post is by being located at
The plating media post cross connecting rod that ten word directions are placed connects circle dielectric posts composition；Described photon crystal structure is just pressed by cellular
Square lattice arrangement is constituted；The distance of the low order end to right flat board connecting rod for the high order end of the left plate connecting rod of described cellular is a；
The distance of the top to upper flat plate connecting rod for the lowermost end of the lower flat board connecting rod of described cellular is a；Described plating media post
Width be 0.055a≤d≤0.059a, the radius of described cylinder is 0.3096a≤r≤0.3186a, and wherein a is tetragonal
Lattice paprmeter, the absolute band gap relative value of described photon crystal structure is more than 17%；Described high refractive index medium is silicon, described
Low refractive index dielectric is air.
3. a kind of big absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder is it is characterised in that described
Photon crystal structure includes high refractive index medium post and low-refraction background media post, and described high refractive index medium post is by being located at
The plating media post cross connecting rod that ten word directions are placed connects circle dielectric posts composition；Described photon crystal structure is just pressed by cellular
Square lattice arrangement is constituted；The distance of the low order end to right flat board connecting rod for the high order end of the left plate connecting rod of described cellular is a；
The distance of the top to upper flat plate connecting rod for the lowermost end of the lower flat board connecting rod of described cellular is a；Described plating media post
Width be 0.055a≤d≤0.059a, the radius of described cylinder is 0.3078a≤r≤0.3231a, and wherein a is tetragonal
Photon crystal structure described in lattice paprmeter absolute band gap relative value be more than 16.8%；Described high refractive index medium is silicon, institute
Stating low refractive index dielectric is air.
4. a kind of big absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder is it is characterised in that described
Photon crystal structure includes high refractive index medium post and low-refraction background media post, and described high refractive index medium post is by being located at
The plating media post cross connecting rod that ten word directions are placed connects circle dielectric posts composition；Described photon crystal structure is just pressed by cellular
Square lattice arrangement is constituted；The distance of the low order end to right flat board connecting rod for the high order end of the left plate connecting rod of described cellular is a；
The distance of the top to upper flat plate connecting rod for the lowermost end of the lower flat board connecting rod of described cellular is a；Described plating media post
Width be 0.055a≤d≤0.059a, the radius of described cylinder is 0.306a≤r≤0.324a, and wherein a is tetragonal
Lattice paprmeter, the absolute band gap relative value of described photon crystal structure is more than 16.6%；Described high refractive index medium is silicon, described
Low refractive index dielectric is air.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410364388.3A CN104101949B (en) | 2014-07-28 | 2014-07-28 | Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal |
| PCT/CN2015/085346 WO2016015630A1 (en) | 2014-07-28 | 2015-07-28 | Large absolute band-gap square-lattice photonic crystal based on cross-rod cylinders and circular cylinders |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410364388.3A CN104101949B (en) | 2014-07-28 | 2014-07-28 | Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal |
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| CN104101949B true CN104101949B (en) | 2017-01-25 |
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| CN104101949B (en) * | 2014-07-28 | 2017-01-25 | 欧阳征标 | Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal |
| CN104459989B (en) * | 2014-12-10 | 2017-03-08 | 深圳市浩源光电技术有限公司 | High Extinction Ratio TE photoswitch based on slab photonic crystal |
| CN104459990B (en) * | 2014-12-10 | 2017-01-11 | 欧阳征标 | High-extinction-ratio polarization unrelated optical switch based on panel photonic crystals |
| CN104459991B (en) | 2014-12-10 | 2016-08-24 | 欧阳征标 | High-polarization based on slab photonic crystal and High Extinction Ratio TE photoswitch |
| CN104820264B (en) * | 2015-05-27 | 2017-11-14 | 欧阳征标 | Rotate hollow square post and rotary triangle post Two dimensional square lattice photonic crystal |
| CN104849806B (en) * | 2015-05-27 | 2017-10-03 | 欧阳征标 | Two dimensional square lattice photonic crystal based on cross connecting rod with rotation hollow square post |
| CN111308582B (en) * | 2020-03-06 | 2021-10-01 | 中南民族大学 | Two-dimensional photonic crystal slab, design method and optical device using the slab |
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| US20060062507A1 (en) * | 2003-04-23 | 2006-03-23 | Yanik Mehmet F | Bistable all optical devices in non-linear photonic crystals |
| CN100419463C (en) * | 2005-11-24 | 2008-09-17 | 中国科学院半导体研究所 | Square crystal lattice 2D photon crystal |
| CN100424236C (en) * | 2005-12-07 | 2008-10-08 | 中国科学院半导体研究所 | Two-dimensional photonic crystal with large absolute band gap |
| US7421171B2 (en) * | 2006-06-23 | 2008-09-02 | Massachusetts Institute Of Technology | Efficient terahertz sources by optical rectification in photonic crystals and metamaterials exploiting tailored transverse dispersion relations |
| CN103176272B (en) * | 2011-12-21 | 2015-07-01 | 北京邮电大学 | Maximum absolute band gap structure optimizing method of two-dimensional photonic crystal |
| CN103901536B (en) * | 2014-04-11 | 2016-08-17 | 深圳大学 | A kind of annulus bar and the Two dimensional square lattice photonic crystal of flat board connecting rod |
| CN104101949B (en) * | 2014-07-28 | 2017-01-25 | 欧阳征标 | Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal |
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| WO2016015630A1 (en) | 2016-02-04 |
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