CN104091997A - T-shaped E-face stub - Google Patents
T-shaped E-face stub Download PDFInfo
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- CN104091997A CN104091997A CN201410352951.5A CN201410352951A CN104091997A CN 104091997 A CN104091997 A CN 104091997A CN 201410352951 A CN201410352951 A CN 201410352951A CN 104091997 A CN104091997 A CN 104091997A
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Abstract
The invention discloses a T-shaped E-face stub which comprises a coupling cavity, a port A, a port B, a port C and at least one one-stage or two-stage or multi-stage matching section. One end of the matching section is connected with the coupling cavity, and the other end of the matching section is connected with the port A or the port B or the port C. According to the T-shaped E-face stub, a compact wideband waveguide power divider is obtained. The T-shaped E-face stub is simple and compact in structure, and capable of being integrally machined with other microwave components at a time conveniently, and becoming an important component of an integrated waveguide system; the T-shaped E-face stub has the advantages that up to 30% of phase pairs are used as the bandwidth, the machining and adjusting cost is low, the precision of width phases between output ends is high, and the T-shaped E-face stub can be widely applied to the radar, missile guidance, communication, military and civil fields.
Description
Technical field
The present invention relates to a kind of power splitter, specifically, relate to the compact wideband power distributor that a kind of amplitude and phase equalization are good.
Background technology
Power splitter is a kind of universal component in modern microwave communication and Military Electronics system.Waveguide power divider, due to features such as its power capacity are high, insertion loss is low, is applied very extensive.T shape E face detail both can use separately, also can form multichannel power division network by serial connection, for fields such as phased array radar, antenna array and power are synthetic.T shape E face detail can be various transmission line forms, but the most general with waveguide T shape E face detail (being generally called hybrid-T branch).Existing waveguide T shape E face detail has the following disadvantages: 1) bandwidth deficiency.The relative bandwidth of operation of the waveguide T shape E face detail on market is generally in 15% left and right.2) miniaturization restriction, prior art cannot be carried out good full bandwidth coupling to port A in very little space.
Summary of the invention
The object of the present invention is to provide amplitude and phase equalization good, bandwidth of operation can reach more than 30% compact broadband T shape E face detail power divider relatively.
To achieve these goals, the technical solution used in the present invention is as follows:
T shape E face detail, comprises coupling cavity, port A, port B, port C, it is characterized in that, also comprise at least one one-level or two-stage or multistage matching section, one end of this matching section is connected with coupling cavity, and the other end of this matching section and port A or port B or port C are connected.
When improving port A as input, the coupling of this T shape E face detail in broadband range, the width of each matching section arranges as follows: for the matching section being connected with port A, exist one to be arranged in horizontal plane butt coupling chamber a bit and a line segment AX of upper another point of port A, constant or dull the diminishing of the direction of the matching section that should be connected with port A and the port A Breadth Maximum edge in a certain plane perpendicular to line segment AX from coupling cavity to port A; For the matching section being connected with port B, exist one to be arranged in horizontal plane butt coupling chamber a bit and a line segment BY of upper another point of port B, the direction constant or dull change of the matching section that should be connected with port B and the port B Breadth Maximum edge in a certain plane perpendicular to line segment BY from coupling cavity to port B is large; For the matching section being connected with port C, exist one to be arranged in horizontal plane butt coupling chamber a bit and a line segment CZ of upper another point of port C, the direction constant or dull change of the matching section that should be connected with port C and the port C Breadth Maximum edge in a certain plane perpendicular to line segment CZ from coupling cavity to port C is large.
Described T shape E face detail inside is filled by air.For the miniaturization of device, we also can make described T shape E face detail inside by other Filled Dielectrics.The summation structure of coupling cavity and all matching sections is structure Q, and the full-size of structure Q in three dimensions is less than 2.5 times of wavelength corresponding in infinitely-great this filled media this T shape E face detail central task frequency.
In order to realize the broadband character of device, port A is set to input, the reflection coefficient of port A that we make this T shape E face detail in the relative bandwidth of operation that is greater than 30% lower than-15dB.
For the ease of utilizing Numerical-control Milling Machines processing, be convenient to the integrated of this device and other microwave device, all parts of this T shape E face detail, the upper surface that comprises coupling cavity, port A, port B, port C and all matching sections is all a part for same plane.Like this, the microwave device that this T shape E face detail is connected with other can be divided into base and cover plate machines.Wherein between base and cover plate, there is no very high contraposition requirement.
In order to realize good amplitude and phase equalization between two outputs, all parts of this T shape E face detail, comprise that coupling cavity, port A, port B, port C and all matching sections form mirror image.The matching section being connected with port A is mirror image, and its symmetrical plane is symmetrical plane X.All parts of this T shape E face detail, comprise that coupling cavity, port A, port B, port C and all matching sections form mirror image with respect to symmetrical plane X.Specifically, self becomes mirror image taking symmetrical plane X as the plane of symmetry for coupling cavity 1, port A2.Port B3 taking symmetrical plane X as the plane of symmetry and port C4 form mirror image.The matching section 11 of connectivity port B3 taking symmetrical plane X as the plane of symmetry and the matching section 11 of connectivity port C4 form mirror image.
The direction of an electric field of the center of port A, port B and port C is all in horizontal plane.
Port A, port B, the port C of this T shape E face detail can be respectively rectangular waveguide, circular waveguide, ridge waveguide, substrate integration wave-guide or with any one in line.
For the ease of revising mismachining tolerance, coupling cavity is or/and the upper surface of matching section can arrange the micrometer adjusting screw that can regulate from the outside its insertion depth.
The normal direction of the port A of this T shape E face detail is greater than 60 degree and is less than 120 degree with port B or/and the angle between the normal direction of port C, the most common with 90 degree.Or the normal direction of port A is greater than 150 degree and is less than 210 degree with port B or/and the angle between the normal direction of port C, the most common with 180 degree.
The invention provides a kind of compact conformation T shape E face detail.Wherein, port A can realize matched well in broadband range.Because this T shape E face detail can be divided into base and cover plate, adopt respectively that Numerical-control Milling Machines is disposable to be machined, in the time that serial connection forms multichannel power division network mutually, all circuit can be divided into base and cover plate, adopt respectively that Numerical-control Milling Machines is disposable to be machined, can greatly simplify thus processing, ensure better machining accuracy simultaneously.Compared with existing E face T-branch, this invention has significant advantage at aspects such as relative bandwidth of operation gold and port A couplings.Meanwhile, the T shape E face detail of rectangular waveguide can be in integrated waveguide network.
Operation principle of the present invention can be summarized as follows: be divided into after two-way when microwave signal enters into coupling cavity by port A, due to the discontinuity in transmitting procedure, signal will be reflected at port A.By special cavity structure being set in coupling cavity and introducing extra reflection at port A or/and output arranges matching section, can make being reflected in wide-band of port A be cancelled, thereby realize the good coupling in broadband.The present invention allows multiple discontinuities directly closely connect, thereby realizes the matched well of the port A of the T shape E face detail in wide-band.
Brief description of the drawings
Fig. 1 is the schematic top plan view of embodiment 1
Fig. 2 is the schematic top plan view of embodiment 2
The corresponding title of attached number in the figure: 1-coupling cavity, 2-port A, 3-port B, 4-port C, 11-matching section.
In this specification, part noun provides as follows:
Horizontal plane, namely paper herein.Horizontal direction, is namely positioned at the direction of horizontal plane.Vertical direction, the namely direction vertical with horizontal plane.
Normal direction: refer to the direction away from T shape E face detail perpendicular to port A or port B or port C end face.In figure, arrow P represents the normal direction of each port.
The full-size of Arbitrary 3 D structure in three dimensions: the maximum of the distance of any two points in this three-dimensional structure.
Mirror image symmetry: for Arbitrary 3 D enclosure space, there is a plane symmetry plane X, for the arbitrfary point A in this three-dimensional enclosure space, total corresponding points B existing in this three-dimensional enclosure space, make line segment AB vertical with this plane X, and line segment AB is divided into two parts equal in length by the intersection point of line segment AB and plane X.At this moment, this three-dimensional enclosure space is called mirror image symmetry, and plane X is called plane of mirror symmetry.
Relatively bandwidth of operation: if the flat rate scope of the work of a microwave device from f1 to f2, its relative bandwidth of operation is defined as: the absolute value of [2* (f2-f1)/(f2+f1)].
Matching section and the port Breadth Maximum in a certain plane perpendicular to line segment AX: matching section and port and the maximum perpendicular to the sectional view of a certain plane of line segment AX width in the horizontal direction.
Matching section and the port depth capacity in a certain plane perpendicular to line segment AX: matching section and port and the maximum perpendicular to the sectional view of a certain plane of the line segment AX degree of depth in vertical direction.
Embodiment
embodiment 1
As shown in Figure 1, T shape E face detail, comprises coupling cavity 1, and port A2, port B3, port C4, also comprise the matching section 11 of 31 grade.One end of this matching section 11 is connected with coupling cavity 1, and the other end of this matching section 11 and port A2 or port B3 or port C4 are connected.
Port A2 is input.The matching section 11 being connected with port A2 and the port A2 Breadth Maximum in a certain plane perpendicular to line segment AX is constant or dull diminishing along the direction from coupling cavity 1 to port A2.The matching section 11 being connected with port B3 and the port B3 Breadth Maximum in a certain plane perpendicular to line segment BY is large along the constant or dull change of direction from coupling cavity 1 to port B3.The matching section 11 being connected with port C4 and the port C4 Breadth Maximum in a certain plane perpendicular to line segment CZ is large along the constant or dull change of direction from coupling cavity 1 to port C4.
The reflection coefficient of the port A2 of this T shape E face detail in the relative bandwidth of operation that is greater than 30% lower than-15dB.
Described T shape E face detail inside is filled by air dielectric.The summation structure of coupling cavity 1 and all matching sections 11 is structure Q.The full-size of structure Q in three dimensions is less than 2.5 times of wavelength corresponding in infinitely-great this filled media this T shape E face detail central task frequency.
All parts of this T shape E face detail, the upper surface that comprises coupling cavity 1, port A2, port B3, port C4 and all matching sections 11 is all a part for same plane.
The matching section 11 being connected with port A2 is mirror image, and its symmetrical plane is X.All parts of this T shape E face detail, comprise that coupling cavity 1, port A2, port B3, port C4 and all matching sections 11 form mirror image with respect to symmetrical plane X.Specifically, self becomes mirror image taking symmetrical plane X as the plane of symmetry for coupling cavity 1, port A2.Port B3 taking symmetrical plane X as the plane of symmetry and port C4 form mirror image.The matching section 11 of connectivity port B3 taking symmetrical plane X as the plane of symmetry and the matching section 11 of connectivity port C4 form mirror image.
The direction of an electric field of the center of described port A2 is in horizontal plane, and the direction of an electric field of the center of port B3 and port C4 is also in horizontal plane.
Described port A2, port B3, port C4 are rectangular waveguide.
Angle between normal direction and port B3 and the normal direction of port C4 of the port A2 of this T shape E face detail equals 90 degree.So this T shape E face detail forms compact E face hybrid-T power splitter.
embodiment 2
As shown in Figure 2, compared with embodiment 1, the difference of this embodiment is only, 1, the normal direction of described port A2 is contrary with the normal direction of port B3 and port C4.So this T shape E face detail forms compact E face y-shaped waveguide power splitter.
Above are only for example, provided preferably implementation more of the present invention.In actual production, coupling cavity 1 can be the cavity of various shapes, and inside can also arrange various metal boss or groove.
That T shape E face detail of the present invention has is simple and compact for structure, the relative bandwidth up to 30%, processing and debugging cost are low, amplitude and the feature such as phase equalization is good between output.They both can be used separately, more can be for forming multi-path power divider.Particularly its directrix plane structure, these devices can be divided into base and cover plate, adopt respectively that Numerical-control Milling Machines is disposable to be machined, and have ensured well the machining accuracy of device and have greatly cut down finished cost.This device can be widely used in military affairs and the civil areas such as radar, missile guidance, communication.
Claims (8)
1.T shape E face detail, comprise coupling cavity (1), port A(2), port B(3), port C(4), it is characterized in that, also comprise at least one one-level or two-stage or multistage matching section (11), one end of this matching section (11) is connected with coupling cavity (1), the other end of this matching section (11) and port A(2) or port B(3) or port C(4) be connected;
For with port A(2) matching section (11) that is connected, exist one be arranged in horizontal plane butt coupling chamber (1) certain a bit and port A(2) a line segment AX of upper another point, should and port A(2) matching section (11) and the port A(2 that are connected) Breadth Maximum edge in a certain plane perpendicular to line segment AX is from coupling cavity (1) to port A(2) constant or dull the diminishing of direction; For with port B(3) matching section (11) that is connected, exist one be arranged in horizontal plane butt coupling chamber (1) certain a bit and port B(3) a line segment BY of upper another point, should and port B(3) matching section (11) and the port B(3 that are connected) Breadth Maximum edge in a certain plane perpendicular to line segment BY is from coupling cavity (1) to port B(3) the constant or dull change of direction large; For with port C(4) matching section (11) that is connected, exist one be arranged in horizontal plane butt coupling chamber (1) certain a bit and port C(4) a line segment CZ of upper another point, should and port C(4) matching section (11) and the port C(4 that are connected) Breadth Maximum edge in a certain plane perpendicular to line segment CZ is from coupling cavity (1) to port C(4) the constant or dull change of direction large; Described port A(2), port B(3) and port C(4) the direction of an electric field of center all in horizontal plane.
2. T shape E face detail according to claim 1, is characterized in that, the port A(2 of this T shape E face detail) reflection coefficient in the relative bandwidth of operation that is greater than 30% lower than-15dB.
3. T shape E face detail according to claim 1, is characterized in that, described T shape E face detail inside is by air dielectric or other Filled Dielectrics; The summation structure of coupling cavity (1) and all matching sections (11) is structure Q, and the full-size of structure Q in three dimensions is less than 2.5 times of wavelength corresponding in infinitely-great this filled media this T shape E face detail central task frequency.
4. according to the T shape E face detail described in claim 1, it is characterized in that coupling cavity (1), port A(2), port B(3), port C(4) and the upper surface of all matching sections (11) be all a part for same plane.
5. T shape E face detail according to claim 1, is characterized in that, with port A(2) matching section (11) that is connected is mirror image, the symmetrical plane of this matching section (11) is symmetrical plane X; All parts of this T shape E face detail, comprise coupling cavity (1), port A(2), port B(3), port C(4) and all matching sections (11) with respect to symmetrical plane X form mirror image.
6. according to the T shape E face detail described in any one in claim 1-5, it is characterized in that described port A(2), port B(3), port C(4) can be respectively rectangular waveguide, circular waveguide, ridge waveguide, substrate integration wave-guide or with any one in line.
7. according to the T shape E face detail described in any one in claim 1-5, it is characterized in that port A(2) normal direction and port B(3) or/and port C(4) and normal direction between angle be greater than 60 degree and be less than 120 degree.
8. according to the T shape E face detail described in any one in claim 1-5, it is characterized in that port A(2) normal direction and port B(3) or/and port C(4) and normal direction between angle be greater than 150 degree and be less than 210 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410352951.5A CN104091997A (en) | 2014-07-24 | 2014-07-24 | T-shaped E-face stub |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410352951.5A CN104091997A (en) | 2014-07-24 | 2014-07-24 | T-shaped E-face stub |
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| CN104091997A true CN104091997A (en) | 2014-10-08 |
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| CN201410352951.5A Pending CN104091997A (en) | 2014-07-24 | 2014-07-24 | T-shaped E-face stub |
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Citations (7)
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|---|---|---|---|---|
| US3375472A (en) * | 1966-06-06 | 1968-03-26 | Microwave Ass | Broadband structures for waveguide hybrid tee's |
| US3657668A (en) * | 1969-06-06 | 1972-04-18 | Int Standard Electric Corp | Hybrid t-junction constructed in waveguide having a cut-off frequency above the operating frequency |
| JP5132406B2 (en) * | 2008-04-21 | 2013-01-30 | 三菱電機株式会社 | T-branch waveguide |
| CN103107404A (en) * | 2013-03-11 | 2013-05-15 | 成都赛纳赛德科技有限公司 | Loaded H-plane equiphase power divider |
| CN103107402A (en) * | 2013-03-11 | 2013-05-15 | 成都赛纳赛德科技有限公司 | H-plane waveguide power divider |
| CN103414001A (en) * | 2013-07-18 | 2013-11-27 | 北京遥测技术研究所 | Plane unequal-power-division waveguide H-T power division network |
| CN204011618U (en) * | 2014-07-24 | 2014-12-10 | 成都赛纳赛德科技有限公司 | Compact T shape E face detail |
-
2014
- 2014-07-24 CN CN201410352951.5A patent/CN104091997A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3375472A (en) * | 1966-06-06 | 1968-03-26 | Microwave Ass | Broadband structures for waveguide hybrid tee's |
| US3657668A (en) * | 1969-06-06 | 1972-04-18 | Int Standard Electric Corp | Hybrid t-junction constructed in waveguide having a cut-off frequency above the operating frequency |
| JP5132406B2 (en) * | 2008-04-21 | 2013-01-30 | 三菱電機株式会社 | T-branch waveguide |
| CN103107404A (en) * | 2013-03-11 | 2013-05-15 | 成都赛纳赛德科技有限公司 | Loaded H-plane equiphase power divider |
| CN103107402A (en) * | 2013-03-11 | 2013-05-15 | 成都赛纳赛德科技有限公司 | H-plane waveguide power divider |
| CN103414001A (en) * | 2013-07-18 | 2013-11-27 | 北京遥测技术研究所 | Plane unequal-power-division waveguide H-T power division network |
| CN204011618U (en) * | 2014-07-24 | 2014-12-10 | 成都赛纳赛德科技有限公司 | Compact T shape E face detail |
Non-Patent Citations (1)
| Title |
|---|
| WANG LEI，等: "A Novel Power Splitter Based on the Waveguide E-type T junction", 《2012 5TH GLOBAL SYMPOSIUM ON MILLIMETER WAVES》 * |
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Application publication date: 20141008 |