CN104091822B - Full-color miniature OLED displayer structure and preparation technology thereof - Google Patents

Full-color miniature OLED displayer structure and preparation technology thereof Download PDF

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CN104091822B
CN104091822B CN201410377775.0A CN201410377775A CN104091822B CN 104091822 B CN104091822 B CN 104091822B CN 201410377775 A CN201410377775 A CN 201410377775A CN 104091822 B CN104091822 B CN 104091822B
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CN104091822A (en
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段瑜
朱亚安
张筱丹
王光华
季华夏
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YUNNAN NORTH OLIGHTEK OPTO-ELECTRONIC TECHNOLOGY Co Ltd
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YUNNAN NORTH OLIGHTEK OPTO-ELECTRONIC TECHNOLOGY Co Ltd
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Abstract

Full-color miniature OLED displayer structure and preparation technology thereof, relate to the full-color miniature organic light emitting display technical field that silicon chip is substrate, especially laser transfer technology formed the miniature OLED displayer structure of top emission true and preparation technology, it is characterized in that using laser transfer method to prepare luminescent layer, be used further in full-color miniature OLED display.The full-color miniature OLED displayer structure of one of the present invention and preparation technology thereof, use laser transfer technology to be applied to full-color miniature OLED displayer structure, and compared with traditional OLED displayer structure using color filter layers, light output rating significantly improves.

Description

Full-color miniature OLED displayer structure and preparation technology thereof
Technical field
The present invention relates to the full-color miniature organic light emitting display technical field that silicon chip is substrate, especially laser transfer The miniature OLED displayer structure of top emission true of technology formation and preparation technology thereof.
Background technology
OLED displayer structure have from main light emission, low-voltage direct-current driving, all solidstate, visual angle width, lightweight, can make A series of features such as large scale and flexible panel, technique are simple, and there are the potentiality of low cost, it is possible to meet current information Technology Times, to Display Technique higher performance and the requirement of bigger information capacity, becomes current scientific circles and industrial circle is the most popular One of problem.
Miniature OLED display refers to display size under 1 inch, the organic illuminator driven based on silicon base CMOS Part, pixel is up to more than 800 × 600.Owing to miniature OLED display volume is little, pixel request is high, cause miniature organic light emission R, G, B sub-pix spot size in display is less than 5 microns, and conventionally employed metal shield is corresponding evaporation on R, G, B sub-pix Red, green, blue material forms full-color technology and cannot realize.And use white light to combine color filter layers technology and realize miniature The method of OLED display true color, then can cause the significant losses of display brightness.As can accurately realize R, G, B Asia picture The substitute technology of the red, green, blue patterning of materials on element, laser transfer technology is developed recently.
Laser transfer principle is: laser passes through mask plate and corresponding optical module, forms square laser beam, a and b It is respectively the length and width of the laser projection laser beam to donor element substrate.Under the scanning of laser beam, by donor Thin layer to be transferred on device substrate is transferred on acceptor's device substrate.Laser transfer technology refers to swashing of lasing light emitter generation Light is converted into heat energy, and utilizes this heat energy to be transferred in target base plate by pattern forming material, thus forms pattern.It is to adopt Key prepared by full-color miniature OLED display is realized by laser transfer technology.
Summary of the invention
Present disclosure is for using metal shield corresponding evaporation red, green and blue material on R, G, B sub-pix In the case of material forms full-color display, use laser transfer technology, by controlling laser transfer technique, it is achieved full-color miniature OLED The preparation of display.
Full-color miniature OLED displayer structure, is formed at including a silicon substrate possessing circuit of display driving and one The full-color miniature OLED display of OLED on silicon substrate, it is characterised in that this full-color miniature OLED display includes:
One anode layer；
One hole functional layer, at least includes a hole injection layer and a hole transmission layer；
One luminescent layer between hole functional layer and electronic work ergosphere；
One electronic work ergosphere, including at least an electron injecting layer and an electron transfer layer；
One cathode layer；
One sealing film layer and a glass cover-plate；
The full-color miniature OLED display of the present invention, it is characterised in that specifically include following steps:
(1) being deposited with anode on a silicon substrate, anode material is Al, a kind of or the most several in Ag, Cr, Mo, Pt, Cu etc. Kind, the thickness of anode is 0.5-100nm；
(2) order evaporation hole injection layer, hole transmission layer on anode；Wherein hole injection layer material be CuPc, MoO3, any one in 1-TNATA, 2-TNATA, thickness is 5-30nm；
Hole transport layer material is any one in NPB, Spiro-TAD, TDAB, and thickness is 5-30nm；
(3) using laser thermal transfer method to be initially formed donor element, its step is as follows:
Prepare the donor element of red light emitting layer, green light emitting layer and blue light-emitting layer the most respectively；Wherein donor element Formed by structure base board, cushion, luminescent layer to be transferred；
Donor baseplate material is for using flexible polymer film, and substrate thicknesses range is 0.03-0.15mm；
Cushion is made up of three-decker, and ground floor is adjacent with substrate, for TiO2、SiO2、Al2O3In any one, thickness Scope is 500-1000nm；The second layer is positioned at above ground floor, for any one in metallic aluminium, bismuth, stannum, indium, zinc, tellurium and Aluminum, bismuth, stannum, indium, zinc, tellurium, titanium, molybdenum, tungsten, cobalt, nickel, platinum, gold, silver, ferrum, lead metal-oxide in any one compound Structure, thickness range is 300-1000nm；Third layer is positioned at above the second layer, and material, thickness are consistent with ground floor；
The thickness range of luminescent layer to be transferred is 10-50nm, luminescent layer to be transferred by object dopant material according to 0.01%- The weight ratio of 10% is doped in material of main part, wherein:
Red luminescent layer material of main part to be transferred is 8-hydroxyquinoline aluminum (Alq3), any in CBP, TPBi and TCTA One, dopant material be in DCM, DCJ and DCJTB any one；
Green luminescent layer material of main part 8-hydroxyquinoline aluminum (Alq to be transferred3), any one in CBP, TPBi and TCTA Kind, dopant material be in C545T, C545TB and C545TM any one；
The material of main part of blue luminescent layer to be transferred is ADN, in MADN, DSA, fluorenes class and pyrene and any one in derivant Kind, dopant material is mainly any one in TBP, DSA-Ph.
The donor element preparing red light emitting layer is placed on the hole transmission layer prepared, uses laser beam Forming square beam of light through mask plate and object lens, preparation red luminescent layer correspondence to be transferred on donor element is turned by laser beam Move on to be formed on hole transmission layer red light emitting layer；Take same method, the donor element of green light emitting layer and blueness are sent out Green light emitting layer and blue light-emitting layer is formed on the donor element of the photosphere corresponding hole transmission layer transferring to prepare respectively；
(4) on luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealing film layer it are deposited with in order；
Electron transfer layer is any one in Bphen, BCP, PBD, and thickness is 5-30 nm；Electron injecting layer material is LiF、Li2O、Li、Alq3In any one, thickness is 1-10 nm；Cathode layer materials is any one in Al, Mg, Ag, thick Degree is 1-10nm；
Sealing film layer material is Al2O3、SiN、SiO2In any one, thickness is 50-3000nm；
(5) patch cover glass protection display.
As preferably, the described laser transfer technique in step (3), it is characterised in that using wavelength is 1064nm's Nd:YAG laser instrument, laser power P is between 5-45W, and laser beam forms square beam of light, laser light through mask plate and object lens Beam width b, according to the subpixel size of miniature OLED display, is adjusted to 4-5 micron, and length a is adjusted between 2-50 micron, Laser light velocity scanning speed is set as between 0.3-0.7m/s.
In laser transfer technique, cushion primarily serve during minimizing thermal transfer imaging to the damage of structure base board and Luminescent layer is transferred to the effect on silicon substrate；Ground floor plays the minimizing thermal transfer imaging process effect to the damage of substrate, The second layer is mainly used in absorbing laser energy, laser light incident radiation is converted into heat energy, in order to luminescent layer is transferred to silicon substrate, Third layer is mainly used at utmost reducing damage and the pollution of the luminescent layer to transfer, reduces luminescent layer during thermal transfer Distortion.
The full-color miniature OLED displayer structure of one of the present invention and preparation technology thereof, use laser transfer technology to be applied to Full-color miniature OLED displayer structure, compared with traditional OLED displayer structure using color filter layers, light output rating is bright Aobvious raising.
Accompanying drawing explanation
Fig. 1 is the full-color miniature OLED displayer structure schematic diagram of one of the present invention.
Fig. 2 is the donor element schematic diagram of the present invention.
Fig. 3 is the laser transfer Method And Principle figure of the present invention.
Fig. 4 is the laser transfer sub-pix scattergram of the present invention.
Fig. 5 is the sub-pix microscope figure after the LASER HEAT transfer of the present invention.
Wherein, silicon substrate 1, anode 2, hole injection layer 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6, electronics is noted Entering layer 7, sealing film layer 8, glass cover-plate 9, to structure base board 10, cushion 11, luminescent layer 12 to be transferred.
Detailed description of the invention
Embodiment 1: the full-color miniature OLED display of the present invention, including a silicon substrate possessing circuit of display driving With a full-color miniature OLED display of OLED formed on a silicon substrate, it is characterised in that this full-color miniature OLED display bag Include:
One anode layer；
One hole functional layer, at least includes a hole injection layer and a hole transmission layer；
One luminescent layer between hole functional layer and electronic work ergosphere；
One electronic work ergosphere, including at least an electron injecting layer and an electron transfer layer；
One cathode layer；
One sealing film layer and a glass cover-plate；
The present invention uses laser transfer technology to prepare full-color miniature OLED display, it is characterised in that specifically include following step Rapid:
(1) being deposited with anode on a silicon substrate, anode material is Al, and the thickness of anode is 50nm；
(2) order evaporation hole injection layer, hole transmission layer on anode；Wherein hole injection layer material is CuPc, thick Degree is 5nm；
Hole transport layer material is NPB, and thickness is 5nm；
(3) using laser thermal transfer method to be initially formed donor element, its step is as follows:
Prepare the donor element of red light emitting layer, green light emitting layer and blue light-emitting layer the most respectively；Wherein donor element Formed by structure base board, cushion, luminescent layer to be transferred；
Donor baseplate material is for using flexible polymer film, and substrate thickness is 0.03mm；
Cushion is made up of three-decker, and ground floor is adjacent with substrate, and material is TiO2, thickness is 500nm；Second layer position Above ground floor, material is the composite construction of the metal-oxide of metallic aluminium and bismuth, and thickness is 300nm；Third layer is positioned at Two layers of top, material, thickness are consistent with ground floor；
The thickness of luminescent layer to be transferred is 30nm, luminescent layer to be transferred by object dopant material according to the weight of 0.01%-10% Amount ratio is doped in material of main part, wherein:
Red luminescent layer material of main part to be transferred is 8-hydroxyquinoline aluminum (Alq3), dopant material is DCM, and doping ratio is 1%；
Green luminescent layer material of main part 8-hydroxyquinoline aluminum to be transferred, dopant material is C545T, and doping ratio is 3%；
The material of main part of blue luminescent layer to be transferred is ADN, and dopant material is TBP, and doping ratio is 3%.
Being placed on the hole transmission layer prepared by the donor element preparing red light emitting layer, employing wavelength is The Nd:YAG laser instrument of 1064nm, laser power P is between 5W, and laser beam forms square beam of light through mask plate and object lens, Laser beam width b, according to the subpixel size of miniature OLED display, is adjusted to 4 microns, and length a is adjusted to 25 microns, swashs Light light velocity scanning speed is set as 0.3m/s.Laser beam will preparation red luminescent layer correspondence to be transferred transfer on donor element Red light emitting layer is formed on hole transmission layer；Take same method, by donor element and the blue-light-emitting of green light emitting layer Green light emitting layer and blue light-emitting layer is formed on the donor element of the layer corresponding hole transmission layer transferring to prepare respectively.
(4) on luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealing film layer it are deposited with in order；
Electron transfer layer is Bphen, and thickness is 5 nm；Electron injecting layer material is LiF, and thickness is 1 nm；Cathode layer material Material is Al, and thickness is 1nm；
Sealing film layer material is Al2O3, thickness is 50nm.
(5) patch cover glass protection display.
With 800*600 resolution, as a example by display area is the miniature OLED display of 0.6 inch, subpixel size designs Being 4 microns * 14 microns, LASER HEAT transfer can successfully realize R, G, and B material correspondence is transferred on sub-pix.
Embodiment 2: the full-color miniature OLED display of the present invention, including a silicon substrate possessing circuit of display driving With a full-color miniature OLED display of OLED formed on a silicon substrate, it is characterised in that this full-color miniature OLED display bag Include:
One anode layer；
One hole functional layer, at least includes a hole injection layer and a hole transmission layer；
One luminescent layer between hole functional layer and electronic work ergosphere；
One electronic work ergosphere, including at least an electron injecting layer and an electron transfer layer；
One cathode layer；
One sealing film layer and a glass cover-plate；
The present invention uses laser transfer technology to prepare full-color miniature OLED display, it is characterised in that specifically include following step Rapid:
(1) being deposited with anode on a silicon substrate, anode material is Ag, and the thickness of anode is 100nm；
(2) order evaporation hole injection layer, hole transmission layer on anode；Wherein hole injection layer material is MoO3, thick Degree is 30nm；
Hole transport layer material is Spiro-TAD, and thickness is 5-30nm；
(3) using laser thermal transfer method to be initially formed donor element, its step is as follows:
Prepare the donor element of red light emitting layer, green light emitting layer and blue light-emitting layer the most respectively；Wherein donor element Formed by structure base board, cushion, luminescent layer to be transferred；
Donor baseplate material is for using flexible polymer film, and substrate thickness is 0.15mm；
Cushion is made up of three-decker, and ground floor is adjacent with substrate, for SiO2, thickness is 1000nm；The second layer is positioned at Above ground floor, belonging to the composite construction in oxide for bismuth metal and titanium, thickness is 1000nm；Third layer is positioned on the second layer Side, material, thickness are consistent with ground floor；
The thickness range of luminescent layer to be transferred is 50nm, luminescent layer to be transferred by object dopant material according to 0.01%-10% Weight ratio be doped in material of main part, wherein:
Red luminescent layer material of main part to be transferred is CBP, and dopant material is DCJ, and doping ratio is 0.8%；
Green luminescent layer material of main part CBP to be transferred, dopant material is C545TB, and doping ratio is 4%；
The material of main part of blue luminescent layer to be transferred is MADN, and dopant material is mainly DSA-Ph, and doping ratio is 5%；
Being placed on the hole transmission layer prepared by the donor element preparing red light emitting layer, employing wavelength is The Nd:YAG laser instrument of 1064nm, laser power P is 20W, and laser beam forms square beam of light through mask plate and object lens, swashs Light width of light beam b, according to the subpixel size of miniature OLED display, is adjusted to 5 microns, and length a is adjusted between 25 microns, Laser light velocity scanning speed is set as 0.7m/s.Preparation red luminescent layer correspondence to be transferred on donor element is turned by laser beam Move on to be formed on hole transmission layer red light emitting layer；Take same method, the donor element of green light emitting layer and blueness are sent out Green light emitting layer and blue light-emitting layer is formed on the donor element of the photosphere corresponding hole transmission layer transferring to prepare respectively.
(4) on luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealing film layer it are deposited with in order；
Electron transfer layer is BCP, and thickness is 30 nm；Electron injecting layer material is Li2O, thickness is 10 nm；Cathode layer material Material is Al, and thickness is 10nm；
Sealing film layer material is SiO2In any one, thickness is 3000nm.
(5) patch cover glass protection display.

Claims (2)

  1. The most full-color miniature OLED displayer structure, is formed at silicon including a silicon substrate possessing circuit of display driving and one The full-color miniature OLED display of OLED on substrate, it is characterised in that this full-color miniature OLED display includes:
    One anode layer；
    One hole functional layer, at least includes a hole injection layer and a hole transmission layer；
    One luminescent layer between hole functional layer and electronic work ergosphere；
    One electronic work ergosphere, including at least an electron injecting layer and an electron transfer layer；
    One cathode layer；
    One sealing film layer and a glass cover-plate；
    Specifically include following steps:
    Being deposited with anode on a silicon substrate, anode material is Al, a kind of or the most several in Ag, Cr, Mo, Pt, Cu etc., anode Thickness is 0.5-100nm；
    Order evaporation hole injection layer, hole transmission layer on anode；Wherein hole injection layer material is CuPc, MoO3、1- Any one in TNATA, 2-TNATA, thickness is 5-30nm；
    Hole transport layer material is any one in NPB, Spiro-TAD, TDAB, and thickness is 5-30nm；
    Using laser thermal transfer method to be initially formed donor element, its step is as follows:
    Prepare the donor element of red light emitting layer, green light emitting layer and blue light-emitting layer respectively；Wherein donor element is by donor Substrate, cushion, luminescent layer to be transferred form；
    Donor baseplate material is for using flexible polymer film, and substrate thicknesses range is 0.03-0.15mm；
    Cushion is made up of three-decker, and ground floor is adjacent with substrate, for TiO2、SiO2、Al2O3In any one, thickness range For 500-1000nm；The second layer is positioned at above ground floor, for any one in metallic aluminium, bismuth, stannum, indium, zinc, tellurium and aluminum, bismuth, Stannum, indium, zinc, tellurium, titanium, molybdenum, tungsten, cobalt, nickel, platinum, gold, silver, ferrum, lead metal-oxide in any one composite construction, Thickness range is 300-1000nm；Third layer is positioned at above the second layer, and material, thickness are consistent with ground floor；
    The thickness range of luminescent layer to be transferred is 10-50nm, luminescent layer to be transferred by object dopant material according to 0.01%-10%'s Weight ratio is doped in material of main part, wherein:
    Red luminescent layer material of main part to be transferred is Alq3, any one in CBP, TPBi and TCTA, dopant material be DCM, In DCJ and DCJTB any one；
    Green luminescent layer material of main part Alq to be transferred3, any one in CBP, TPBi and TCTA, dopant material be C545T, In C545TB and C545TM any one；
    The material of main part of blue luminescent layer to be transferred is ADN, in MADN, DSA, fluorenes class and pyrene and in derivant any one, Dopant material is mainly any one in TBP, DSA-Ph；
    The donor element preparing red light emitting layer is placed on the hole transmission layer prepared, uses laser beam to pass through Mask plate and object lens form square beam of light, and preparation red luminescent layer correspondence to be transferred on donor element is transferred to by laser beam Red light emitting layer is formed on hole transmission layer；Take same method, by donor element and the blue light-emitting layer of green light emitting layer The donor element corresponding hole transmission layer transferring to prepare respectively on form green light emitting layer and blue light-emitting layer；
    Luminescent layer is deposited with electron transfer layer, electron injecting layer, cathode layer and sealing film layer in order；
    Electron transfer layer is any one in Bphen, BCP, PBD, and thickness is 5-30 nm；Electron injecting layer material be LiF, Li2O、Li、Alq3In any one, thickness is 1-10 nm；Cathode layer materials is any one in Al, Mg, Ag, and thickness is 1-10nm；
    Sealing film layer material is Al2O3、SiN、SiO2In any one, thickness is 50-3000nm；
    Patch cover glass protection display.
  2. Full-color miniature OLED displayer structure the most as claimed in claim 1, described laser thermal transfer method, it is characterised in that The Nd:YAG laser instrument using wavelength to be 1064nm, laser power P is between 5-45W, and laser beam passes through mask plate and object lens Forming square beam of light, laser beam width b, according to the subpixel size of miniature OLED display, is adjusted to 4-5 micron, length a Being adjusted between 2-50 micron, laser light velocity scanning speed is set as between 0.3-0.7m/s.
CN201410377775.0A 2014-08-04 2014-08-04 Full-color miniature OLED displayer structure and preparation technology thereof Active CN104091822B (en)

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CN108198955B (en) * 2017-12-14 2020-01-31 安徽熙泰智能科技有限公司 Vacuum laminating method of full-color silicon-based OLED micro-display device
CN109728061B (en) 2019-01-04 2021-03-23 京东方科技集团股份有限公司 Pixel structure, display panel and display device
CN110071144A (en) * 2019-04-08 2019-07-30 深圳市华星光电半导体显示技术有限公司 OLED display and preparation method
CN113363406A (en) * 2021-06-25 2021-09-07 安徽熙泰智能科技有限公司 Spin coating method suitable for Micro OLED and Micro OLED structure

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Application publication date: 20141008

Assignee: Kunming BOE Display Technology Co., Ltd.

Assignor: Yunnan North OLiGHTEK Opto-Electronic Technology Co., Ltd.

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Denomination of invention: Full-color mini type OLED (Organic Light Emitting Diode) displayer structure and manufacturing process thereof

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