CN104075973B - A kind of device and method of nondestructive measurement nano-wire array specific surface area and closeness - Google Patents

Abstract

<b>the invention discloses the device of a kind of nondestructive measurement nano-wire array specific surface area and closeness, described nano-wire array is vertical at conductive basal layer end face, this device includes electrolyzer, it is located at the back electrode of described conductive basal layer bottom surface, be located at described nano-wire array respective side to electrode, and be covered in described conductive basal layer end face and do not grow the insulating barrier of nano wire region; In described nano-wire array and described electrolyte electrode immersed in described electrolyzer, described conductive basal layer and described back electrode are arranged with the insulation of described electrolyte simultaneously, finally described back electrode and described to electrode between plus bias</b><b><i>u</i></b><b>form electrolyzer loop structure, have an advantage in that, it is nondestructive measurement that the present invention measures the method for nano-wire array specific surface area and closeness, and the specific surface area and the closeness that are simultaneously suitable for large area one-dimensional nano structure array are measured, and will not destroy the integrity of nano-wire array.</b>

Description

A kind of device and method of nondestructive measurement nano-wire array specific surface area and closeness

Technical field

The present invention relates to a kind of measurement apparatus and method, especially relate to the device and method of a kind of nondestructive measurement nano-wire array specific surface area and closeness.

Background technology

Specific surface area refers to the total surface area sum of the material of unit mass, and iu is: m²/ g, specific surface area is to weigh the Important Parameters of substance characteristics. The specialized equipment measuring the specific surface area of porous/nano material and powder at present is all based on BET (three scientist Brunauer, Emmett and Teller) theory to carry out data process, and namely Cleaning Principle is famous BET Adsorptive Theory of Real Gases. This quasi-instrument is usually by the detection change of testing sample quality, the change of chamber pressure or makes comparisons with standard sample and determines the adsorbance of Adsorbate Gas, and then theoretical and calculate specific surface area according to BET.

Specific surface area based on Adsorptive Theory of Real Gases measures the current comparative maturity of technology, is widely used, and can measure porous/nano material and the powder of arbitrary shape, but need to treat that test sample is placed individually in the fixing container of specific environment when its shortcoming is to measure. no matter for the one-dimensional nano structure array obtained by method from top to bottom or method growth from bottom to top, gained nano material be all stand on suprabasil. in order to utilize the construction features of nano material array, it is generally not capable of from substrate, separate nano material. but, when substrate volume is bigger (under normal circumstances, substrate is very big relative to nano material and powder), the nano-structure array as a whole with matrix cannot be directly introduced in the middle of current main-stream investigating instrument for surface area device, even if being put in reluctantly by the way of reduction of cutting into slices, air blowing in measurement process and vibration etc. process also can destroy the integrity standing on suprabasil nano-wire array, and the measurement comprising substrate can affect result accuracy, namely current main-stream is measured technology and cannot be realized nondestructively measuring the specific surface area of one-dimensional nano structure array.

Measure the closeness of one-dimensional nano structure array, the i.e. quantity of one-dimensional nano structure in unit are, the top shape appearance figure of nano-structure array is usually first shot by ultramicroscope, calculate the quantity of one-dimentional structure according to aberration again through image analysis software, and the aberration of nano wire and the background accuracy important to software analysis in picture, the only significantly reliability of aberration guarantee result. Namely the method utilizes ultramicroscope to serve as eyes to carry out the quantity of several one-dimensional nano structure. Owing to individual ultramicroscope picture correspondence shoots the finiteness of area, the method once can only check the closeness in finite region, represents entirety by the density in regional area. When each different time of the closeness in zones of different, the method needs the array in whole area is divided into multiple zonule, takes pictures one by one and analyzes. Closeness for large area one-dimensional nano structure array is measured, and the method needs the picture number shot excessive, now no longer applicable.

Summary of the invention

The present invention seeks to: provide the device and method of a kind of nondestructive measurement nano-wire array specific surface area and closeness, these apparatus and method are applicable to measure specific surface area and the closeness of the nano-wire array of one-dimensional rule or approximate regulation.

The technical scheme is that the device of a kind of nondestructive measurement nano-wire array specific surface area and closeness, described nano-wire array is vertical at conductive basal layer end face, this device includes electrolyzer, it is located at the back electrode of described conductive basal layer bottom surface, be located at described nano-wire array respective side to electrode, and be covered in described conductive basal layer end face and do not grow the insulating barrier of nano wire region; In described nano-wire array and described electrolyte electrode immersed in described electrolyzer; The resistivity of described electrolyte is less than the 1/1000 of tested nano-wire array resistivity; Described conductive basal layer and described back electrode are arranged with the insulation of described electrolyte simultaneously, finally described back electrode and described to electrode between become electrolyzer loop structure plus bias U-shaped.

Preferably, in the side of described conductive basal layer, the side of described back electrode and lower surface thereof be equipped with insulated enclosure layer.

Preferably, it is provided with the substrate installing hole for placing conductive basal layer bottom described electrolyzer or on sidewall, and is provided with insulated enclosure circle between described substrate installing hole and described conductive basal layer.

Preferably, described insulating barrier one in silicon oxide inorganic insulating membrane, silicon nitride inorganic insulating membrane, Alumina Inorganic dielectric film, aluminium nitride inorganic insulating membrane, polyimides organic insulating film, polyethylene organic insulating film, polyvinylidene fluoride organic insulating film, politef organic insulating film.

A kind of method of nondestructive measurement nano-wire array specific surface area and closeness, comprises the following steps:

1) adopt conductive basal layer as the substrate of nano-wire array, and make back electrode in the bottom surface of this conductive basal layer;

2) nanowire region area deposition one layer insulating is not grown at above-mentioned conductive basal layer end face, by in electrolyte electrode immersed successively in electrolyzer of described nano-wire array and its respective side, the resistivity of described electrolyte is less than the 1/1000 of tested nano-wire array resistivity, and ensure nano-wire array and electrode is not directly contacted with, described conductive basal layer and described back electrode are arranged with the insulation of described electrolyte simultaneously, then back electrode and to electrode between become electrolyzer loop structure plus bias U-shaped, and measure the electric current I by described electrolyzer loop;

3) based on above-mentioned bias U and electric current I, and in conjunction with following formula:

$A_{speciflc}=\frac{I\mathrm{\&rho;}L{\&Integral;}_0^{R}rf\left(r\right)dr}{\mathrm{\&Delta;}m\&CenterDot;U\&lsqb;{\&Integral;}_0^{R}r\ln (L+\sqrt{L^2+r^2})f\left(r\right)dr-f_0^{R}r\ln rf\left(r\right)dr\&rsqb;}$ With

$S=\frac{I\mathrm{\&rho;}}{A_{gemo}\&CenterDot;2\mathrm{\&pi;}U\&lsqb;{\&Integral;}_0^{R}r\ln (L+\sqrt{L^2+r^2})f\left(r\right)dr-{\&Integral;}_0^{R}r\ln rf\left(r\right)dr\&rsqb;},$ Calculate the specific surface area A obtaining nano-wire array_specificAnd closeness S;

Wherein U is bias, and I is current value, and ρ is the resistivity corresponding to nano-material, and L is the height of nano-wire array, and R is the maximum radius of nano wire, the radius distribution function that f (r) is nano wire, and Δ m is the quality of nano-wire array, A_gemoThe geometric area of the substrate shared by nano-wire array.

Preferably, described insulating barrier one in silicon oxide inorganic insulating membrane, silicon nitride inorganic insulating membrane, Alumina Inorganic dielectric film, aluminium nitride inorganic insulating membrane, polyimides organic insulating film, polyethylene organic insulating film, polyvinylidene fluoride organic insulating film, politef organic insulating film.

Preferably, in the side of described conductive basal layer, the side of described back electrode and lower surface thereof be respectively provided with insulated enclosure layer.

Preferably, bottom described electrolyzer or sidewall be arranged to place the substrate installing hole of conductive basal layer, and insulated enclosure circle is set between described substrate installing hole and described conductive basal layer.

Measuring principle: when solid contacts with liquid, certain contact berrier can be formed, but when adding bigger voltage at solid and liquid two ends and form loop, by selecting suitable electrolyte, the pressure drop between solid-liquid interface accounts for the ratio of applying bias and can be down to only small and can ignore. Now, electrolyte is equivalent to and one end of solid formation Ohmic contact, on solid-liquid interface, the voltage of any point and solid back electrode can closely be considered as equal to applying bias, can be approximated to loop current (i corresponding to the solid-liquid interface of infinite multiple tiny area and back electrode by the loop current (I) of whole solid-liquid interface_j) be formed in parallel (I=Σ_ji_j). Solid-liquid interface area can be extrapolated by measuring the total current value obtained, i.e. the surface area of solid electrode, concrete grammar is as follows:

For being grown in suprabasil nano-wire array, first setting about from the single nano-wire standing on substrate, the hypothesis of this model has:

1) it is injected into the carrier inside nano-wire array from electrolyte to be along nano wire side and nano wire bottom center beeline and transmit, by the total current of single nano-wire equal to by the electric current superposition outside the nano wire from substrate different distance;

2) radius of nano wire is relative to highly much smaller, and apex area can be ignored relative to outside area;

3) the contact berrier height between nano wire and substrate is much smaller relative to outer bias, can ignore.

The specific surface area A of nano-wire array of the present invention_specificAnd the closeness S derivation of equation is as follows:

The electric current (i (r)) flowing through single nano-wire can calculate by method shown in Fig. 1, and by being highly x, (dash area) electric current di that width is outside the nano wire of dx can be write as:

$di=\frac{2\mathrm{\&pi;}r\&CenterDot;U}{\mathrm{\&rho;}}\frac{dx}{\sqrt{x^2+r^2}}---\left(1\right)$

Wherein ρ is the resistivity of tested nano wire sample, and U is applying bias value, and r is the radius of nano wire. The height of whole nano wire is integrated, obtains:

$i\left(r\right)={\&Integral;}_0^{L}di=\frac{2\mathrm{\&pi;}r\&CenterDot;U}{\mathrm{\&rho;}}{\&Integral;}_0^L\frac{dx}{\sqrt{x^2+r^2}}---\left(2\right)$

Wherein L is the height of nano wire, solves integration and obtains:

$i\left(r\right)=\frac{2\mathrm{\&pi;}r\&CenterDot;U}{\mathrm{\&rho;}}ln\frac{L+\sqrt{L^2+r^2}}{r}---\left(3\right)$

L is write as the expression formula of i (r):

$L=\frac{r}{2}\&CenterDot;\frac{\exp \left(\frac{i\left(r\right)\mathrm{\&rho;}}{\mathrm{\&pi;}rU}\right)-1}{\exp \left(\frac{i\left(r\right)\mathrm{\&rho;}}{2\mathrm{\&pi;}rU}\right)}---\left(4\right)$

Have according to model hypothesis:

A (r)=2 π rL (5)

(4) formula is substituted into (5) formula, can obtain:

$A\left(r\right)={\mathrm{\&pi;r}}^2\frac{\exp \left(\frac{i\left(r\right)\mathrm{\&rho;}}{\mathrm{\&pi;}rU}\right)-1}{\exp \left(\frac{i\left(r\right)\mathrm{\&rho;}}{2\mathrm{\&pi;}rU}\right)}={\mathrm{\&pi;r}}^2\frac{\exp \left(\frac{2i\left(r\right)K}{rU}\right)-1}{\exp \left(\frac{i\left(r\right)K}{rU}\right)},$ Wherein $K=\frac{\mathrm{\&rho;}}{2\mathrm{\&pi;}}---\left(6\right)$

Assume that the wire diameter distribution function of nano-wire array is that (namely radius is that to account for the ratio of all nano wires be f (r) for the nano wire of r to f (r), and Σ f (r)=1), then the average surface area of every nano wire is represented by:

$A_{ave}=\&Integral;A\left(r\right)f\left(r\right)dr=2\mathrm{\&pi;}L{\&Integral;}_0^{R}rf\left(r\right)dr---\left(7\right)$

By the average current of every nano wire it is:

$I_{ava}={\&Integral;}_0^{R}i\left(r\right)f\left(r\right)dr---\left(8\right)$

Bring (3) formula into (8) formula to obtain:

$I_{ave}=\frac{2\mathrm{\&pi;}v}{\mathrm{\&rho;}}\&lsqb;{\&Integral;}_0^{R}r\ln (L+\sqrt{L^2+r^2})f\left(r\right)dr-{\&Integral;}_0^{R}r\ln rf\left(r\right)dr\&rsqb;---\left(9\right)$

Finally write as:

$I_{ave}=\frac{U}{K}\&lsqb;{\&Integral;}_0^{R}r\ln (L+\sqrt{L^2+r^2})f\left(r\right)dr-{\&Integral;}_0^{R}r\ln rf\left(r\right)dr\&rsqb;---\left(10\right)$

The total quantity N of nano wire is:

N=I/I_ave(11)

The total surface area A of nano-wire array_allFor:

A_all=NA_ave(12)

The specific surface area A of nano-wire array_specificFor:

A_specific=A_all/Δm(13)

What wherein Δ m was substrate before and after growth nano-wire array is of poor quality.

The closeness S of nano wire is:

S=N/A_gemo(14)

Wherein A_gemoThe geometric area of the substrate shared by nano-wire array.

Analyze and derivation according to above, obtain I in conjunction with measured under certain outer bias U, can draw:

$A_{apeciflc}=\frac{I\mathrm{\&rho;}L{\&Integral;}_0^{R}rf\left(r\right)dr}{\mathrm{\&Delta;}m\&CenterDot;U\&lsqb;{\&Integral;}_0^{R}r\ln (L+\sqrt{L^2+r^2})f\left(r\right)dr-{\&Integral;}_0^{R}r\ln rf\left(r\right)dr\&rsqb;}---\left(15\right)$

$S=\frac{I\mathrm{\&rho;}}{A_{gemo}\&CenterDot;2\mathrm{\&pi;}U\&lsqb;{\&Integral;}_0^{R}r\ln (L+\sqrt{L^2+r^2})f\left(r\right)dr-{\&Integral;}_0^{R}r\ln rf\left(r\right)dr\&rsqb;}---\left(16\right)$

Wherein U is bias, and I is current value, and ρ is the resistivity corresponding to nano-material, and L is the height of nano-wire array, and R is the maximum radius of nano wire, the radius distribution function that f (r) is nano wire, and Δ m is the weight of nano-wire array, A_gemoGeometric area for the covered substrate of nano-wire array.

Nano-wire array (i.e. f (r for single-size₀)=1), (15) and (16) formula can be reduced to:

$A_{specific}=\frac{I\mathrm{\&rho;}L}{\mathrm{\&Delta;}m\&CenterDot;U\ln \frac{L+\sqrt{L^2+{r_0}^2}}{r_0}}---\left(17\right)$

$S=\frac{I\mathrm{\&rho;}}{A_{gemo}\&CenterDot;2{\mathrm{\&pi;r}}_{0}U\ln \frac{L+\sqrt{L^2+{r_0}^2}}{r_0}}---\left(18\right)$

Wherein U is bias, and I is current value, and ρ is the resistivity corresponding to nano-material, and L is the height of homogeneous nano-wire array, r₀For the radius of homogeneous nano wire, Δ m is the weight of nano-wire array, A_gemoSpatial area shared by nano-wire array.

The realizing method of last layer insulating barrier is not deposited by nano wire overlay area, with reference to shown in Fig. 4 at conductive basal layer end face:

1) obtain being grown on the nano-wire array to be measured of conductive basal layer end face;

2) utilize technique for atomic layer deposition at the insulating barrier (such as the Alumina Inorganic dielectric film that 100nm is thick) of nano-wire array and one layer of uniform thickness of conductive basal layer superficial deposit;

3) being deposited with one layer of gold thin film protective layer along nano wire vertical direction, the area deposition namely only not growing nano-wire array on nano wire top and conductive basal layer has gold thin film protective layer;

4) the Alumina Inorganic dielectric film of nano wire top and side is removed in the selective etch agent using Alumina Inorganic dielectric film, and the gold thin film protective layer being positioned at nano wire top Alumina Inorganic dielectric film upper surface also departs from nano wire therewith.

5) finally removing residue gold thin film protective layer with etching agent, final realization is not being deposited one layer of Alumina Inorganic dielectric film on nano wire overlay area.

The invention have the advantage that

1. the present invention measures the method for nano-wire array specific surface area and closeness is nondestructive measurement, and the specific surface area and the closeness that are simultaneously suitable for large area one-dimensional nano structure array are measured, and will not destroy the integrity of nano-wire array.

2. the measuring method of the present invention is applicable to the nano-wire array of multiple material, nano material for different resistivity, having only to the resistivity ensureing electrolyte less than the 1 ‰ of nano material resistivity, namely electrolyte is little as far as possible with the contact berrier of nano-material to be measured can meet measurement requirement.

3. the present invention has no special requirements to measuring environment, it is not necessary to heating, evacuation or ventilation.

Accompanying drawing explanation

Below in conjunction with drawings and Examples, the invention will be further described:

Fig. 1 is the current diagram by single nano-wire;

Fig. 2 is the vertical nano-wire array specific surface area placed and closeness test device schematic diagram;

Fig. 3 is nano-wire array specific surface area and the closeness test device schematic diagram of horizontal positioned;

Fig. 4 is the technical process not growing nanowire region area deposition one layer insulating at conductive basal layer;

Wherein: 1 zinc oxide nano-wire array, 2ITO conductive basal layer, 3 electrolyzers, 3-1 electrolyte, 4 back electrodes, 5 pairs of electrodes, 6 Alumina Inorganic dielectric films.

Detailed description of the invention

Embodiment one:

Preparing zinc oxide nano-wire array 1 on ITO conductive basal layer 2, shared by zinc oxide nano-wire array 1, the area on ITO conductive basal layer 2 surface is 0.25cm²ITO conductive basal layer 2 is of poor quality for 10mg in the front and back of growth of zinc oxide nano linear array 1, the resistivity of zinc oxide nanowire is 100 Ω cm, deposits the thick Alumina Inorganic dielectric film 6 of last layer 50nm in ITO conductive basal layer 2 end face not oxidized zinc nano wire overlay area.

The bottom surface having the ITO conductive basal layer 2 of zinc oxide nano-wire array 1 in above-mentioned growth makes back electrode 4, prepare to be provided with bottom what a the electrolyzer 3 (spatial area shared by perforated area and surveyed nano-wire array is suitable) of substrate installing hole, insulated enclosure circle is adopted to be sealed in bottom electrolyzer 3 by ITO conductive basal layer 2, zinc oxide nano-wire array 1 is located in electrolyzer 3, inside electrolyzer 3, inject the KCl electrolyte 3-1 of 1mol/L again, be only now that zinc oxide nano-wire array 1 directly contacts with KCl electrolyte 3-1 with Alumina Inorganic dielectric film 6.

Again in electrolyzer 3, place Pt sheet above zinc oxide nano-wire array 1 as to electricity level 5 (as shown in Figure 2), precision digital source table (provide bias and measure current values) is used to connect back electrode 4 and to electricity level 5, under dark situation, plus bias, recording when biasing U and being 2.0V, electric current I is 5.0A.

If the zinc oxide nano-wire array grown 1 is uniform-dimension maybe can be approximately uniform-dimension, and obtains the radius r of single zinc oxide nanowire by electronic scanner microscope measurement₀For 80nm, height L is 5 μm, and the specific surface area that can extrapolate zinc oxide nano-wire array 1 based on formula (17) and (18) is 25.8890cm²/ g, closeness is 4.1203 × 10⁶/cm²。

Embodiment two:

Preparing zinc oxide nano-wire array 1 on ITO conductive basal layer 2, shared by zinc oxide nano-wire array 1, the area on ITO conductive basal layer 2 surface is 0.25cm²ITO conductive basal layer 2 is of poor quality for 10mg in the front and back of growth of zinc oxide nano linear array 1, the resistivity of zinc oxide nanowire is 100 Ω cm, deposits the thick Alumina Inorganic dielectric film 6 of last layer 50nm in ITO conductive basal layer 2 end face not oxidized zinc nano wire overlay area.

The bottom surface having the ITO conductive basal layer 2 of zinc oxide nano-wire array 1 in above-mentioned growth makes back electrode 4, prepare what a sidewall and be provided with the electrolyzer 3 (spatial area shared by perforated area and surveyed nano-wire array is suitable) of substrate installing hole, adopt insulated enclosure circle that ITO conductive basal layer 2 is sealed in electrolyzer 3 sidewall, zinc oxide nano-wire array 1 is located in electrolyzer 3, inside electrolyzer 3, inject the KCl electrolyte 3-1 of 1mol/L again, be only now that zinc oxide nano-wire array 1 directly contacts with KCl electrolyte 3-1 with Alumina Inorganic dielectric film 6.

Again in electrolyzer 3, the opposite of zinc oxide nano-wire array 1 place Pt sheet as to electricity level 5 (as shown in Figure 3), precision digital source table (provide bias and measure current values) is used to connect back electrode 4 and to electricity level 5, under dark situation, plus bias, recording when biasing U and being 2.0V, electric current I is 5.0A.

If the radius size of zinc oxide nano-wire array 1 to be measured has two values, i.e. radius r₁Zinc oxide nanowire for 80nm accounts for the 20% of sum, radius r₂Account for the 80% of sum for the zinc oxide nanowire of 100nm, the height L of single zinc oxide nanowire is 5 μm, then now extrapolating the specific surface area of zinc oxide nano-wire array 1 according to formula (15) and (16) is 26.92596cm²/ g, closeness is 3.57112 × 10⁶/cm²。

Embodiment one and embodiment two are typically based on the growth conditions of nano-wire array about the accounting of the radius size of nano-wire array to be measured and obtain, the i.e. distribution of catalyst particle size or the distribution of sizes of mask plate in growth method from top to bottom in growth method from bottom to top, owing to the present invention measures specific surface area and the closeness of nano-wire array, for nano-wire array to be measured, its radius distribution is known maybe can be measured by other technologies/be estimated, the same just as the surface area of conductive substrates shared by quality and the nano-wire array of nano-wire array is known conditions.

Notice that the specific surface area value with above-mentioned examples measure nano-wire array out is less than common porous material, this mainly due to this nanowire alignment sparse caused by, for the nano-wire array of dense arrangement, corresponding specific surface area is up to 1m²/ more than g. Additionally, the surface area herein calculating out and specific surface area can be slightly more on the low side than practical situation, error is mainly derived from the nanowire sidewalls area that nano wire apex area is left in the basket and is covered by insulating barrier, and when nano wire draw ratio is more than 50, usual error is lower than 1%. For having the nano wire of semiconductor property, should be noted that so that nano wire is under forward bias during biasing, and the size of resistivity also can to a certain degree affect the accuracy of measurement result, when resistance is too little (< 0.01 Ω cm), requiring that voltage and current measurement precision is high especially, it is bigger that the result that otherwise the method obtains can deviate reality.

The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations. All within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.

Claims (8)

1. the device of a nondestructive measurement nano-wire array specific surface area and closeness, described nano-wire array is vertical at conductive basal layer end face, it is characterized in that, this device includes electrolyzer, it is located at the back electrode of described conductive basal layer bottom surface, be located at described nano-wire array respective side to electrode, and be covered in described conductive basal layer end face and do not grow the insulating barrier of nano wire region; In described nano-wire array and described electrolyte electrode immersed in described electrolyzer; The resistivity of described electrolyte is less than the 1/1000 of tested nano-wire array resistivity; Described conductive basal layer and described back electrode are arranged with the insulation of described electrolyte simultaneously, finally described back electrode and described to electrode between become electrolyzer loop structure plus bias U-shaped.

2. the device of nondestructive measurement nano-wire array specific surface area according to claim 1 and closeness, it is characterised in that in the side of described conductive basal layer, the side of described back electrode and lower surface thereof be equipped with insulated enclosure layer.

3. the device of nondestructive measurement nano-wire array specific surface area according to claim 1 and closeness, it is characterized in that, it is provided with the substrate installing hole for placing conductive basal layer bottom described electrolyzer or on sidewall, and is provided with insulated enclosure circle between described substrate installing hole and described conductive basal layer.

4. the device of nondestructive measurement nano-wire array specific surface area according to claim 1 and closeness, it is characterized in that, described insulating barrier one in silicon oxide inorganic insulating membrane, silicon nitride inorganic insulating membrane, Alumina Inorganic dielectric film, aluminium nitride inorganic insulating membrane, polyimides organic insulating film, polyethylene organic insulating film, polyvinylidene fluoride organic insulating film, politef organic insulating film.

5. the method for a nondestructive measurement nano-wire array specific surface area and closeness, it is characterised in that comprise the following steps:

1) adopt conductive basal layer as the substrate of nano-wire array, and make back electrode in the bottom surface of this conductive basal layer;

2) nanowire region area deposition one layer insulating is not grown at above-mentioned conductive basal layer end face, by in electrolyte electrode immersed successively in electrolyzer of described nano-wire array and its respective side, the resistivity of described electrolyte is less than the 1/1000 of tested nano-wire array resistivity, and ensure nano-wire array and electrode is not directly contacted with, described conductive basal layer and described back electrode are arranged with the insulation of described electrolyte simultaneously, then back electrode and to electrode between become electrolyzer loop structure plus bias U-shaped, and measure the electric current I by described electrolyzer loop;

3) based on above-mentioned bias U and electric current I, and in conjunction with following formula:

$A_{specific}=\frac{I\mathrm{\&rho;}L{\&Integral;}_0^{R}rf\left(r\right)dr}{\mathrm{\&Delta;}m\&CenterDot;U\&lsqb;{\&Integral;}_0^{R}rln(L+\sqrt{L^2+r^2})f\left(r\right)dr-{\&Integral;}_0^{R}r\ln rf\left(r\right)dr\&rsqb;}$ With

$S=\frac{I\mathrm{\&rho;}}{A_{gemo}\&CenterDot;2\mathrm{\&pi;}U\&lsqb;{\&Integral;}_0^{R}rln(L+\sqrt{L^2+r^2})f\left(r\right)dr-{\&Integral;}_0^{R}r\ln rf\left(r\right)dr\&rsqb;},$ Calculate the specific surface area A obtaining nano-wire array_specificAnd closeness S;

Wherein U is bias, and I is current value, and ρ is the resistivity corresponding to nano-material, and L is the height of nano-wire array, and R is the maximum radius of nano wire, the radius distribution function that f (r) is nano wire, and Δ m is the quality of nano-wire array, A_gemoThe geometric area of the substrate shared by nano-wire array.

6. the method for nondestructive measurement nano-wire array specific surface area according to claim 5 and closeness, it is characterized in that, described insulating barrier one in silicon oxide inorganic insulating membrane, silicon nitride inorganic insulating membrane, Alumina Inorganic dielectric film, aluminium nitride inorganic insulating membrane, polyimides organic insulating film, polyethylene organic insulating film, polyvinylidene fluoride organic insulating film, politef organic insulating film.

7. the method for nondestructive measurement nano-wire array specific surface area according to claim 5 and closeness, it is characterised in that in the side of described conductive basal layer, the side of described back electrode and lower surface thereof be respectively provided with insulated enclosure layer.

8. the method for nondestructive measurement nano-wire array specific surface area according to claim 5 and closeness, it is characterized in that, bottom described electrolyzer or sidewall be arranged to place the substrate installing hole of conductive basal layer, and insulated enclosure circle is set between described substrate installing hole and described conductive basal layer.