CN104070422A - Nanometer depth high-speed scratching method of submicron curvature radius single particle diamond needle tip - Google Patents
Nanometer depth high-speed scratching method of submicron curvature radius single particle diamond needle tip Download PDFInfo
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- CN104070422A CN104070422A CN201410324503.4A CN201410324503A CN104070422A CN 104070422 A CN104070422 A CN 104070422A CN 201410324503 A CN201410324503 A CN 201410324503A CN 104070422 A CN104070422 A CN 104070422A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
Abstract
The invention provides a nanometer depth high-speed scratching method of a submicron curvature radius single particle diamond needle tip, and belongs to the technical field of brittle crystal ultraprecise processing. The nanometer depth high-speed scratching method of the submicron curvature radius single particle diamond needle tip is characterized in that samples are silicon wafers, sapphires, magnesium oxide and silicon carbide wafers, a natural diamond is used as the raw material of the needle tip, the natural diamond is fixed on a metal rod body by a high-frequency welding method, a diamond abrasion wheel is used as an abrasive tool at the beginning, at last a cast iron plate is used as the abrasion wheel, the rotating speed of the abrasive tool is 30-60 m/s, and the grinding feed rate is 200 nanometers to two micrometers per second. The curvature radius of the single particle diamond needle tip is 50-950 nanometers, and the need tip is in a shape of a circular cone, a triangular pyramid and a rectangular pyramid. On an ultraprecise flat grinder, in the nanometer depth high-speed scratching process, the speed rate of the diamond needle tip is 1.7-40.2 m/s, the combined deviation of the flateness of the silicon wafers and the end face runout of the grinder is used for achieving the nanometer depth high-speed scratching experiment of the submicron curvature radius single particle diamond needle tip of brittle crystals. The nanometer depth high-speed scratching method of the submicron curvature radius single particle diamond needle tip has the advantages that the high-speed scratching method of the submicron curvature radius single particle diamond needle tip of the brittle crystals is achieved.
Description
Technical field
The invention belongs to brittle crystal Ultraprecision Machining field, relate to the processing method of brittle crystal superfine grinding, particularly a kind of sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed scratching method.
Background technology
Hard crisp wafer is as silicon chip, sapphire, magnesia, carborundum, be widely used in the fields such as military affairs, national defence, Aeronautics and Astronautics, these hard crisp wafers are becoming before high performance device substrate, generally experience crystal-pulling, scroll saw cuts into the techniques such as wafer, resin bond wheel grinding, chemically mechanical polishing.Traditional resin bond wheel grinding, because grinding damage layer is thicker, what easily cause hard crisp wafer collapses the manufacturing deficiencies such as limit, fragmentation, cut.For the hard crisp wafer of silicon chip, after chemically mechanical polishing, the circuit of also will growing, carries out thinning back side again after protection, due to the damage bed thickness of resinoid bond, easily causes the manufacturing deficiency such as warpage, fragmentation of silicon chip during attenuate.Although tradition is processed with shortcoming, the high-performance substrate of hard crisp wafer requires after ultraprecise processing, and hard crisp wafer surface is without machining damage, surface roughness R
a<1nm, micron order flatness.Traditional resin bond wheel is difficult to reach the requirement of the ultraprecise processing of high-performance substrate.For the ultraprecise processing method of development of new, will study the basic principle of superfine grinding, i.e. sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed scratching method.
The individual particle scratching method of research emery wheel mainly contains two kinds at present: a kind of is the abrasive wear of research emery wheel, and another kind is to adopt the abrasive particle of the method simulation emery wheel of quasistatic loading to be pressed into and scratching experimental technique.The size of the emery wheel of flat surface grinding is generally hundreds of millimeter, is difficult to directly to put into vacuum chamber and carries out ESEM sign.Common light microscope is owing to leaving image blur behind focal plane, obtains clearly comparatively difficulty of emery wheel microscopic appearance image, and the grit size of #3000 emery wheel is 5 microns, light microscope indistinguishable.On the other hand, the same particle before and after wheel grinding is difficult to find, and what have comes off, and the experience wear having is especially for the high fine grit emery wheel of granularity, more difficult.In addition, emery wheel is due to High Rotation Speed, and the surface of the work after grinding is the result of the reciprocal grinding of a plurality of abrasive particles rather than the grinding of single abrasive particle single.Therefore, people adopt the nanometer degree of depth of the method research emery wheel abrasive particle that quasistatic loads to be pressed into and scratching is tested, and nano impress and nanometer cut method simulate respectively that emery wheel is pressed into and scratching process.But the speed of the superfine grinding of emery wheel is generally 20-50m/s, and the speed of nano impress and cut is for being generally μ m/s magnitude, greatly differs from each other with the speed of real superfine grinding.
Summary of the invention
The object of the invention is to adopt sub-micron radius of curvature individual particle Diamond tip, realize fragility wafer nanometer degree of depth high speed scratching method.
Technical scheme of the present invention is that sample is silicon chip, sapphire, magnesia, silicon carbide wafer, adopting natural diamond is needle point raw material, natural diamond is fixed on metallic rod body by the method for high-frequency welding, grinding tool starts as skive, finally cylinder iron coil, grinding tool rotating speed is 30-60m/s, and grinding and feeding amount is 200nm-2 μ m/s.Individual particle Diamond tip radius of curvature is 50-950 nanometer, and needlepoint form is circular cone, triangular pyramid and rectangular pyramid.On ultraprecise surface grinding machine, during nanometer degree of depth high speed scratching, the speed of Diamond tip is 1.7-40.2m/s, utilize the combination deviation of the flatness of silicon chip and the end face run-out of grinding machine, complete the experiment of sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed scratching.
Sample is silicon chip, sapphire, magnesia, silicon carbide wafer.Silicon chip, as the monopolization material of semiconductor applications, has very important effect in semiconductor chip manufacture.Sapphire is widely used in photoelectricity window, and magnesia is as the backing material of high-temperature superconductor film.Silicon carbide wafer has the advantages such as high heat conductance, high disruptive field intensity, high saturated electrons drift speed and high bonding energy, it is semiconductor applications one of the most promising material, also being the desirable backing material of light emitting diode and laser diode, is one of key foundation material of photoelectricity industry.These four kinds of brittle crystals have excellent performance, in field separately, have very important application, therefore, select these four kinds of brittle crystals as the sample of typical sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed scratching experiment.
Adopting natural diamond is needle point raw material, and weight is 0.1-0.2 carat, and natural diamond is fixed on metallic rod body with Ni-based, iron-based or Co-based alloy powder by the method for high-frequency welding.Natural diamond is than artificial diamond, and intensity is better, organizes more even, in diamond, bubble is few, therefore crackle is few, can bear better power and hot percussion with respect to artificial diamond, therefore as the preferred material of individual particle Diamond tip nanometer degree of depth high speed scratching.Consider cost and the difficulty of processing of natural diamond, select the natural diamond of 0.1-0.2 carat proper.Natural diamond, in the process of grinding, bear the effect of larger grinding force, therefore natural diamond will be welded on metallic rod body.Adopt comparatively conventional Ni-based, iron-based, Co-based alloy powder that natural diamond is welded on metallic rod body.The intensity of this alloy powder wants high a lot of compared with simple metal, therefore considers to select a kind of as welding powder of Ni-based, iron-based or cobalt-based.
The method processing natural diamond that adopts superfine grinding, grinding tool starts as skive, finally cylinder iron coils, and grinding tool rotating speed is 30-60m/s, and grinding and feeding amount is 200nm-2 μ m/s.Because diamond is the hardest known in the world material, therefore also adopt the method processing natural diamond of skive high-speed grinding.In the process of grinding, due to the percussion of grinding force, and the effect of high-speed grinding heat, can there is carbonization in 700 degree left and right in diamond, thereby be worn away, so the grinding speed of superfine grinding natural diamond is extremely important.Consider the clearance of material, at first, the speed of abrasive grinding wheel can be selected lower slightly grinding speed, and as 30m/s, grinding and feeding speed can be larger, as 2 μ m/s, and choice for abrasive tools skive at this time; Along with the carrying out of grinding, adamantine needle point is progressively shaped, and in order to make the radius of curvature of needle point reach submicron order, grinding speed improves, and as 60m/s, grinding and feeding speed is reduced to 500nm/s.Radius of curvature until needle point reaches after requirement substantially, adopts cast iron plate as final polishing tool.Cast iron plate is difficult to grind off diamond, but cast iron plate at high temperature can with diamond generation chemical reaction, adamantine carbon atom can be penetrated in cast iron plate, thereby present graphitization feature, make Diamond tip surface become smooth, and remove under chemical action, reduce the damage layer thickness of Diamond tip.In order to produce grinding heat, grinding tool speed is now higher, and as 60m/s, grinding and feeding amount will reduce, if speed is 200nm/s.
Diamond tip after superfine grinding adopts the method for ion beam polishing to carry out dressing.Diamond tip after superfine grinding, reaches sub-micron radius of curvature Diamond tip and has belonged to difficult, further reduce radius of curvature to nanoscale, very difficult.Therefore, on the basis of the sub-micron radius of curvature individual particle Diamond tip after superfine grinding, then adopt the method for FIB polishing to carry out dressing, make the radius of curvature of needle point be reduced to nanoscale.And this method is to adopt the method for Ions Bombardment to remove carbon atom, be that the method that carbon atom is peeled off one by one realizes material removal, so residual impairment layer is minimum, negligible, so can reach nanoscale radius of curvature Diamond tip.
Individual particle Diamond tip radius of curvature is 50-950 nanometer, and needlepoint form is circular cone, triangular pyramid and rectangular pyramid.The percussion of considering the power of nanometer degree of depth high speed scratching process, the radius of curvature of needle point is unsuitable too small, otherwise scratching several times needle point just mill not, therefore selecting 50 nanometers is the lower limit of needle point radius of curvature.Therefore during superfine grinding, the grit size of #5000 Technique of Vitrified Diamond Wheels is 2 μ m, selects to be limited to 950 nanometers in the radius of curvature of sub-micron radius of curvature Diamond tip.The grain shape of actual emery wheel is typically taper shape, Rhizoma Sparganii taper and rectangular pyramid shape, therefore selects these three kinds of shapes as the machining shape of individual particle Diamond tip.
Sub-micron radius of curvature Diamond tip after processing is installed on ultraprecise surface grinding machine, utilizes the combination deviation of the flatness of silicon chip and the end face run-out of grinding machine, complete the experiment of sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed scratching.Japan produces Okamoto VG401MKII ultra-precision grinding machine, end face run-out is 50nm, the PV value of the flatness of 200mm business silicon chip after chemically mechanical polishing can reach 100nm, utilize the combination deviation of this 150nm, adopt flat surface grinding method, after tool setting completes, on the silicon chip that is 100mm at radius, under the condition without feeding, utilize the combination deviation of 150nm to realize nanometer degree of depth high speed scratching method in the starting stage of cut.
During nanometer degree of depth high speed scratching, the speed of Diamond tip is 1.7-40.2m/s.Generally, during flat surface grinding, the speed of emery wheel is 25-40m/s, and the speed of mainshaft of corresponding emery wheel is 1600-2200rpm.In this experiment, because the nanometer degree of depth scratching under low speed is also very important, therefore selecting the speed of mainshaft of emery wheel is 100-2400rpm, and the rotating speed of corresponding emery wheel is 1.7-40.2m/s.
Surface after nanometer degree of depth high speed scratching adopts transmitting Electronic Speculum test cut pattern and a width, original position is carried out FIB cutting test scratch depth, and original position is prepared into sample for use in transmitted electron microscope, in transmission electron microscope, carry out the imaging of sub-lattice surface distortion atomic lattice.The relative tungsten filament Electronic Speculum of resolution ratio of transmitting Electronic Speculum want high, especially for semiconductor and insulator sample.The experiment of nanometer degree of depth high speed scratching is wanted to find abrasive dust under transmitting Electronic Speculum on the scene and is produced and crisp key point of moulding transformation, width and the degree of depth that test these two points.ESEM can provide pattern and the width of cut microcell, but cannot provide the degree of depth of cut.Under ESEM, to interested microcell, to carry out depth test, generally carry out the cutting of original position FIB, that is to say in FIB field emission scanning electron microscope and characterize, then carry out ion beam cutting MTD.Otherwise, once mobile example will be difficult to find that interested microcell again.After ion beam cutting, the in-situ test degree of depth, and adopt the bonding small copper ring of manipulator in ion beam Electronic Speculum, original position is prepared into sample for use in transmitted electron microscope, carries out ion milling, qualified after, send into and in transmission electron microscope, carry out atomic scale lattice imaging.
Effect of the present invention and benefit are to adopt sub-micron radius of curvature individual particle Diamond tip, adopt the end face run-out of ultra-precision grinding machine and the combination deviation of business silicon chip flatness PV value, have realized brittle crystal nanometer degree of depth high speed scratching method.
The specific embodiment
Below in conjunction with technical scheme, describe the specific embodiment of the present invention in detail.
Choose natural diamond, weight is 0.1 carat, complete in crystal formation, flawless and bubble.According to natural diamond size and cutter finished size, require to make hue angle frock clamp, adopt #45 steel as rod body material, body of rod length is 29mm, rear end is the screwed hole of M6, length is 17mm, and front end is that diameter is the cylinder of 8mm, adamantine position is installed and is lathed 90 degree.According to the lines trend of natural diamond, select hardness the highest, a crystal face of applicable sharpening, marks.Front end at the body of rod gets out an aperture that is greater than diamond diameter, and the degree of depth is adamantine 2 times, and the index face of natural diamond is put into aperture upward together with Co-based alloy powder.With a graphite rod tip, get out one and diamond hole of the same size, withstand diamond, make diamond keep motionless in the process of high-frequency welding.The diamond body of rod and diamond are put into high-frequency welder together with graphite rod and carry out high-frequency welding, in welding process, with graphite rod, withstand diamond downwards, prevent from rotating, keep 5s clock motionless after alloy powder melting, then graphite rod is removed, and welding completes.Weld natural diamond is partly exposed, then handle body is processed into the size of drawing requirement.
The handle body processing is put into the frock clamp of ultra-precision grinding machine, then carried out superfine grinding.In grinding process, emery wheel and adamantine grinding adopt CCD to monitor in real time, monitored picture are shown enlarged on liquid crystal display, to adjust angle and the grinding parameter of diamond frock clamp.According to the order of corase grind, fine grinding and super grinding, change emery wheel, be followed successively by the emery wheel of W40, W20, W5, the rotating speed of emery wheel when corase grind is 35m/s, and grinding and feeding amount is 2 μ m/s, and the corase grind stage is mainly to remove diamond to the first one-step forming of Diamond tip.Enter subsequently the accurate grinding stage, grinding wheel speed is still 35m/s, and grinding and feeding amount is 1 μ m/s, and grinding diamond is to moulding.Enter subsequently the superfine grinding stage, grinding wheel speed is brought up to 50m/s, and grinding and feeding amount is reduced to 500nm/s, Precise Grinding triangularity, and leg-of-mutton projection angle is 120 degree.The grinding of final employing cast iron plate, grinding wheel speed is 50m/s, grinding and feeding amount is 200nm/s, to diamond grinding smooth surface.Then adopt high-speed steel to carry out grinding, grinding wheel speed is 50m/s, and grinding and feeding amount is 200nm/s, and to diamond surface light, grinding completes.
Whether manual detection diamond surface has or not breakage, crackle, weld firm.Adopt #120 emery wheel to carry out grinding metallic rod body, be ground to surface roughness R
abe 0.8 μ m.Oil removing, rust cleaning, washing, Passivation Treatment are carried out in metallic rod body surface, then the metallic rod body bubble after processing is done in the chromium plating liquid of catalyst at sulfuric acid and fluosilicic acid, be placed in drying oven and dry subsequently, complete plating.Before carrying out the experiment of nanometer degree of depth high speed scratching, will in diamond body of rod emission scan Electronic Speculum on the scene, Diamond tip be characterized.Adopting a transmitting ring to sweep Electronic Speculum (Quanta200, FEG, Netherlands) tests and characterizes Diamond tip pattern.Diamond tip is Rhizoma Sparganii taper, and needle point radius of curvature is about 150nm, and needle point angle is 120 degree, obtains scanning electron microscope image.
The diamond body of rod is installed in the grinding disc of aluminium alloy with the bolt tail of M6, and al alloy disk diameter is 336mm, and the diameter that the screwed hole of the diamond body of rod is installed is 320mm.The symmetrical opposite side of al alloy disk is installed the firm body of rod of same #45, just there is no diamond point, contraction in length 1mm, for 28mm, as dynamically balanced counterweight, use, after dynamic balancing detection is qualified, al alloy disk is installed on Okamoto VG401MKII ultra-precision grinding machine, starts to carry out the experiment of sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed scratching.
Sample is silicon (100) wafer after the chemically mechanical polishing of business, and diameter is 150mm, and thickness is 625 μ m.Silicon chip is adsorbed on ceramic vacuum sucker by the method for vacuum suction.Adopt the mode of manual tool setting to carry out tool setting, utilize the inverted image of Diamond tip on silicon chip to carry out preliminary tool setting, when inverted image will soon contact with needle point by the time, carry out slow tool setting, fine rotation air spindle emery wheel, by the time Diamond tip rotates and marks after slight cut on silicon chip, and manual tool setting completes.Write down the exact figure position of ultra-precision grinding machine, then carry out automatic cutter lifting setting, with the speed of 10 μ m/min, lift Diamond tip 20 μ m, write down the exact figure position of air spindle now.Start to carry out auto-feed setting.For per pass cut is separated, the ratio of the speed of mainshaft and rotating speed of table can not be integer, and therefore selecting the speed of mainshaft is 500rpm, and rotating speed of table is 99rpm, and the rotating speed of Diamond tip is 8.37m/s, and grinding and feeding amount is 1 μ m/min.Start to carry out the nanometer degree of depth high speed scratching experiment of individual particle Diamond tip.The grinding time is 20min, so that the digit position when reaching Diamond tip and lifting.After reaching, Diamond tip lifts Diamond tip 20 μ m with the speed of 10 μ m/min, checks whether silicon chip occurs cut.If do not occurred; continuation is with the scratching speed of 8.37m/s; grinding and feeding amount is that 1 μ m/min is to lower feeding 21min; surpass cutter position 1 μ m; then cutter lifting 20 μ m, look into the vestige seeing if there is after individual particle scratching, if it's not true; repeat downward 1 μ m/min and cutter lifting 20 μ m and view procedure, until there is cut.Cut is to put under from edge, from centre, marks.
Diamond tip after scratching is continued to put into a transmitting ring and sweep Electronic Speculum (Quanta200, FEG, Netherlands) in, test and characterize, find that individual particle Diamond tip carries out the rear needle point of nanometer degree of depth high speed scratching experiment and keeps complete, almost do not wear and tear, therefore can carry out test and the sign of silicon chip cut.The silicon chip that contains cut is selected to the fritter of the wide 1cm of diamond pen cut growth 2cm for suitable cut, put in FIB ESEM (LYRA3TESCAN, Czech Republic) and test and characterize.When characterizing, first sample is spent along cut width rotation 55, so not impact of beam width test.In test, find, per pass cut and another road cut are apart from 1mm left and right, each other without impact.Cut occurs that the width of abrasive dust is 93.06nm first, cut occur first crackle crisp-width of moulding transition point be 1184.22nm, then original position is carried out FIB cutting.First deposit one deck platinum and carry out surface protection, and then carry out FIB cutting, carry out original position electron beam patterning after cutting, the degree of depth recording is 60.74nm, due to rotary sample 55 degree, therefore the actual degree of depth is 74.15nm.Because the degree of depth of cut increases gradually, there is the crisp-degree of depth of moulding transformation, be 74.15nm, therefore the degree of depth along the shallow direction of cut is all less than 74.15nm, thereby this experiment has completed sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed cut method.
Claims (1)
1. a sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed scratching method, adopts sub-micron radius of curvature individual particle Diamond tip, realizes fragility wafer nanometer degree of depth high speed scratching method, it is characterized in that:
(1) sample is silicon chip, sapphire, magnesia, silicon carbide wafer;
(2) adopting natural diamond is needle point raw material, and weight is 0.1-0.2 carat, and natural diamond is fixed on metallic rod body with Ni-based, iron-based or Co-based alloy powder by the method for high-frequency welding;
(3) adopt the method processing natural diamond of superfine grinding, grinding tool starts as skive, finally cylinder iron coils, and grinding tool rotating speed is 30-60m/s, and grinding and feeding amount is 200nm-2 μ m/s;
(4) Diamond tip after superfine grinding adopts the method for ion beam polishing to carry out dressing;
(5) individual particle Diamond tip radius of curvature is 50-950 nanometer, and needlepoint form is circular cone, triangular pyramid and rectangular pyramid;
(6) the sub-micron radius of curvature Diamond tip after processing is installed on ultraprecise surface grinding machine, utilize the combination deviation of the flatness of silicon chip and the end face run-out of grinding machine, complete the experiment of sub-micron radius of curvature individual particle Diamond tip nanometer degree of depth high speed scratching;
(7) speed of Diamond tip is 1.7-40.2m/s during nanometer degree of depth high speed scratching;
(8) surface after nanometer degree of depth high speed scratching adopts transmitting Electronic Speculum test cut pattern and a width, original position is carried out FIB cutting test scratch depth, and original position is prepared into sample for use in transmitted electron microscope, in transmission electron microscope, carry out the imaging of sub-lattice surface distortion atomic lattice.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107505248A (en) * | 2017-08-21 | 2017-12-22 | 大连理工大学 | A kind of nanometer cutting-in high speed single-point scratching experimental rig and its test method |
| JP7406322B2 (en) | 2019-07-31 | 2023-12-27 | マニー株式会社 | dental diamond bur |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60177802A (en) * | 1984-02-22 | 1985-09-11 | Toshiba Corp | Mirror surface machining |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60177802A (en) * | 1984-02-22 | 1985-09-11 | Toshiba Corp | Mirror surface machining |
Non-Patent Citations (4)
| Title |
|---|
| 林思煌等: "单颗金刚石划擦玻璃的实验研究", 《金刚石与磨料磨具工程》, no. 5, 31 October 2008 (2008-10-31), pages 21 - 24 * |
| 王健全: "面向工程陶瓷的单颗粒金刚石磨粒划擦磨损规律", 《金刚石与磨料磨具工程》, vol. 32, no. 3, 30 June 2012 (2012-06-30), pages 1 - 5 * |
| 胡映宁等: "单颗粒金刚石平面划擦大理石的实验研究", 《金刚石与磨料磨具工程》, vol. 30, no. 5, 31 October 2010 (2010-10-31), pages 38 - 43 * |
| 胡珊珊等: "单颗粒金刚石划擦脆硬材料的表面形貌影响因素研究", 《金刚石与磨料磨具工程》, vol. 30, no. 1, 28 February 2010 (2010-02-28), pages 1 - 4 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107505248A (en) * | 2017-08-21 | 2017-12-22 | 大连理工大学 | A kind of nanometer cutting-in high speed single-point scratching experimental rig and its test method |
| CN107505248B (en) * | 2017-08-21 | 2019-07-16 | 大连理工大学 | A kind of nanometer of cutting-in high speed single-point scratching experimental rig and its test method |
| US11313783B2 (en) | 2017-08-21 | 2022-04-26 | Dalian University Of Technology | Nanometer cutting depth high-speed single-point scratch test device and test method thereof |
| JP7406322B2 (en) | 2019-07-31 | 2023-12-27 | マニー株式会社 | dental diamond bur |
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