CN104065296A - 300-kilovolt nanosecond pulser - Google Patents
300-kilovolt nanosecond pulser Download PDFInfo
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- CN104065296A CN104065296A CN201410329680.1A CN201410329680A CN104065296A CN 104065296 A CN104065296 A CN 104065296A CN 201410329680 A CN201410329680 A CN 201410329680A CN 104065296 A CN104065296 A CN 104065296A
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- stereotyped
- dull
- pulse forming
- blumlein
- line
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention provides a 300-kilovolt nanosecond pulser. The 300-kilovolt nanosecond pulser is formed by crossing and stacking sixteen single-stage panel Blumlein pulse forming lines, and each single stage of panel Blumlein pulse forming line comprises a ceramic solid-state panel transmission line, a GaAs light guide switch, a laser diode triggering system, a high-voltage diode and a non-inductive ceramic resistor load. The sixteen single-stage panel Blumlein pulse forming lines are compactly arranged on a platform to form the 300-kilovolt nanosecond pulser. According to the 300-kilovolt nanosecond pulser, the pulse width 16 times of the output voltage amplitude of one single-stage panel Blumlein pulse forming line can be obtained, and the nanosecond level short-pulse and high-voltage output is achieved. Circuit coupling and electromagnetic coupling among the single-stage panel Blumlein pulse forming lines are weakened.
Description
Technical field
The invention belongs to Pulse Power Techniques field, be specifically related to a kind of 300kV millimicrosecond pulse generator, can be used for producing the high voltage pulse that pulsewidth is nanosecond order.
Background technology
At present, all there is bulky, heavy shortcoming in most high voltages, high-power practical pulse power system device, and developing light, compact pulse power device is this art inexorable trend.Pulse Power Techniques not only have important function in military fields such as High-Power Microwave, accelerator, light laser and material modifications, and have advantage function in civilian technology fields such as biologic medical, food sterilizing, sewage disposals.In a large amount of research reports, the halfwidth of the high-voltage pulse of pulse power system output is wider, and system configuration is huge and heavy, and construction cost is expensive.The development of compact solid state pulse power system based on solid-state Plate-Transmission-Line technology always is the focus of domestic and international research, especially of greatest concern with the research of the Pulse Power Techniques of stacked Blumlein pulse forming line.Because this technology combines high energy storage technology, transmission line technology, switching technique together, greatly reduced the volume and weight of pulse power device, very easily realize miniaturization and the densification of pulse power system.
Summary of the invention
In order to overcome the huge heaviness of system configuration in existing Pulse Power Techniques, the deficiency of construction cost costliness, when realizing high voltage, the high-power output of pulse power device, guarantee that pulse power system structure is more light, compact, the invention provides a kind of 300kV millimicrosecond pulse generator.Described generator, adopts the stacked Blumlein line of multipath solid-state, by multiplication of voltage, designs and the every road of the Synchronization Control Blumlein wiretap conducting moment, realizes the pulse of multipath solid-state Blumlein line locking output voltage; Meanwhile, adopt special Decoupling Design, realize the potential pulse of every road Solid state Blumlein line output separate and be superimposed upon in load simultaneously, thereby obtain the high voltage pulse output of hundreds of kV.In this scheme, between each device of assembly, by optimized compact structure, design, connection and the fixation problem of individual device have been solved, not only can produce the about 10ns of pulse halfwidth, pulse amplitude reaches 300kV short pulse high voltage, and this assembly adds up and can be formed multicomponent structures by cordwood system type, and then obtain the pulse voltage of higher amplitude.
The technical solution adopted for the present invention to solve the technical problems is:
Described 300kV millimicrosecond pulse generator comprises the dull and stereotyped Blumlein pulse forming line of 16 single-stages.The dull and stereotyped Blumlein pulse forming line of single-stage contains ceramic solid-state Plate-Transmission-Line, GaAs photoconductive switch, laser diode triggering system, high-voltage diode, noninductive ceramic resistor load; Wherein, laser diode triggering system is comprised of laser diode drive and laser diode; Two solid-state Plate-Transmission-Lines of pottery overlap up and down, and GaAs photoconductive switch electrode two ends are connected on two electrodes of a solid-state Plate-Transmission-Line input of pottery wherein; Two electrodes of the solid-state Plate-Transmission-Line input of pottery, one connects input high-pressure side through high-voltage diode, and one connects input grounding end through long lead, can increase communication time, weakens the which couple of the dull and stereotyped Blumlein pulse forming line of each single-stage; Between the dull and stereotyped Blumlein pulse forming line output of the output high-pressure side of the dull and stereotyped Blumlein pulse forming line of the first order and afterbody earth terminal, be connected with noninductive ceramic resistor load; Laser diode triggering system is arranged on directly over GaAs photoconductive switch, makes the laser positive control of output be mapped to GaAs photoconductive switch surface; The dull and stereotyped Blumlein pulse forming line of 16 described single-stages is fixed on platform, dull and stereotyped Blumlein pulse forming lines at different levels are stacked step by step at output, between the dull and stereotyped Blumlein pulse forming line of adjacent single-stage in the stacked intersection of output, angle is 9 °, reaches the object that weakens the Space Coupling effect between dull and stereotyped Blumlein pulse forming lines at different levels.The dull and stereotyped Blumlein pulse forming line of described adjacent single-stage superposes step by step at output, reaches the object of voltage pulse output amplitude stacks at different levels.The quantity of the described dull and stereotyped Blumlein pulse forming line of single-stage is 16, and stack forms 300kV millimicrosecond pulse generator step by step.
The invention has the beneficial effects as follows, by multistage stacked Blumlein pulse forming line, can obtain 300kV millimicrosecond pulse generator; By increasing the electromagnetic communication time between each single-stage Blumlein pulse forming line in this generator, realize the which couple weakening between single-stage Blumlein pulse forming line; By the cross layered mode of the dull and stereotyped Blumlein pulse forming line of each single-stage, form multistage laminated flat Blumlein pulse forming line times laminated structure, weaken the electromagnetic coupled between the dull and stereotyped Blumlein pulse forming line of adjacent single-stage.
Accompanying drawing explanation
Fig. 1 is the dull and stereotyped Blumlein pulse forming line of the single-stage circuit theory diagrams in the present invention;
Fig. 2 is the structural representation of 300kV millimicrosecond pulse generator of the present invention;
Fig. 3 is circuit theory diagrams of the present invention;
Fig. 4 is output high voltage pulse oscillogram of the present invention;
In figure, 1. the noninductive ceramic resistor load 6. high-voltage diode 7. platform 8. input high-pressure side 9. input grounding ends (through long lead ground connection) of ceramic solid-state Plate-Transmission-Line 2.GaAs photoconductive switch 3. laser diode drive 4. laser diode 5. are 10. exported the dull and stereotyped Blumlein pulse forming line of earth terminal 11. output high-pressure side 12. fixture dull and stereotyped Blumlein pulse forming line 15. afterbodies of 13. stop screw 14. first order.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Embodiment 1
Fig. 1 is the dull and stereotyped Blumlein pulse forming line of the single-stage circuit theory diagrams in the present invention, and Fig. 2 is the structural representation of 300kV millimicrosecond pulse generator of the present invention.In Fig. 1 ~ 2,300kV millimicrosecond pulse generator of the present invention, comprise the dull and stereotyped Blumlein pulse forming line of single-stage, the dull and stereotyped Blumlein pulse forming line of single-stage contains ceramic solid-state Plate-Transmission-Line, GaAs photoconductive switch, laser diode triggering system, high-voltage diode, noninductive ceramic resistor load; Wherein, laser diode triggering system is comprised of laser diode drive and laser diode; Two solid-state Plate-Transmission-Lines of pottery overlap up and down, and GaAs photoconductive switch electrode two ends are connected on two electrodes of a solid-state Plate-Transmission-Line input of pottery wherein; Two electrodes of the solid-state Plate-Transmission-Line input of pottery, one connects input high-pressure side through high-voltage diode, and one connects input grounding end through long lead; Laser diode triggering system is arranged on directly over GaAs photoconductive switch, makes the laser positive control of output be mapped to GaAs photoconductive switch surface; The dull and stereotyped Blumlein pulse forming line of described single-stage is fixed on platform, and dull and stereotyped Blumlein pulse forming lines at different levels are stacked step by step at output, between the dull and stereotyped Blumlein pulse forming line of adjacent single-stage in the stacked intersection of output; Between the dull and stereotyped Blumlein pulse forming line output of the output high-pressure side of the dull and stereotyped Blumlein pulse forming line of the first order and afterbody earth terminal, be connected with noninductive ceramic resistor load.The dull and stereotyped Blumlein pulse forming line of adjacent single-stage superposes step by step at output, reaches the object of voltage pulse output amplitude stacks at different levels.
In the present embodiment, the quantity of the described dull and stereotyped Blumlein pulse forming line of single-stage is 16, and stack forms 300kV millimicrosecond pulse generator step by step.Wherein, the dull and stereotyped Blumlein pulse forming line of every one-level comprises ceramic solid-state Plate-Transmission-Line 1, GaAs photoconductive switch 2, laser diode drive 3, laser diode 4, noninductive ceramic resistor load 5, high-voltage diode 6, fixture 12, stop screw 13, its circuit theory as shown in Figure 1, outside long pulse power supply just, negative level is connected to the input grounding end 9 of high-voltage diode 6 and ceramic solid-state Plate-Transmission-Line 1, high-voltage diode 6 connects the input high-pressure side 8 of ceramic solid-state Plate-Transmission-Line 1 again, the solid-state Plate-Transmission-Line 1 of pottery is charged to amplitude maximum, by controlling laser diode, drive 3 exciting laser diode 4 output infrared lasers, laser triggers 2 conductings of GaAs photoconductive switch, through the shaping pulse of the dull and stereotyped Blumlein pulse forming line of single-stage, in noninductive ceramic resistor load 5, obtain the short pulse high voltage output that pulsewidth that amplitude equals input voltage is nanosecond order.In Fig. 1, the solid-state dull and stereotyped Blumlein pulse forming line thickness of single group pottery is 2 mm, withstand voltage 20 kV that are greater than, and the halfwidth of voltage pulse output waveform is about 10 ns, and voltage pulse output amplitude equals input voltage amplitude.
The angular range arranging between the dull and stereotyped Blumlein pulse forming line of described adjacent single-stage is 9 °, reaches the object that weakens the space electromagnetic coupling effect between dull and stereotyped Blumlein pulse forming lines at different levels; The dull and stereotyped Blumlein pulse forming line of single-stage all accesses high-voltage diode isolation and long lead, reaches the which couple weakening between dull and stereotyped Blumlein pulse forming lines at different levels; The dull and stereotyped Blumlein pulse forming line of each single-stage superposes step by step at output, reaches the object of voltage pulse output amplitude stacks at different levels.
As shown in Figure 2, platform 7 is set to stepped 16 layers to the annexation of 16 grades of stacked Blumlein pulse shaping line structures in the present embodiment, and each layer be spiral step by step, and ladder height is 2mm.By fixture 12 by the solid-state Plate-Transmission-Line 1 of the pottery of the first order, GaAs photoconductive switch 2 is spacing and be fixed on platform 7 ground floors, laser diode 4 is welded on laser diode drive 3, by stop screw 13, be fixed on platform 7 ground floors, input high-pressure side 8 connects high-voltage diode 6, high-voltage diode 6 connects one end of GaAs photoconductive switch 2, input grounding end 9 connects the other end of GaAs photoconductive switch 2 by fixture 12 contacts, input grounding end 9 is connected with earth terminal by long lead, forms the dull and stereotyped Blumlein pulse forming line 14 of the first order.Being connected and fixed between the solid-state Plate-Transmission-Line of pottery at different levels, GaAs photoconductive switch, laser diode, laser diode drive, high-voltage diode is identical with the dull and stereotyped Blumlein pulse forming line 14 of the first order, dull and stereotyped Blumlein pulse forming lines output high-pressure sides at different levels and the dull and stereotyped Blumlein pulse forming line output of previous stage earth terminal intersect 9 ° of contacts and are connected, and one-level flat board Blumlein pulse forming line is positioned on previous stage flat board Blumlein pulse forming line afterwards.Dull and stereotyped Blumlein pulse forming line thickness at different levels is 2mm, and 2mm cooperatively interacts with spiral step height.By fixture 12, two electrodes of noninductive ceramic resistor load 5 are connected respectively with the output earth terminal 10 of the 16 grade, the output high-pressure side 11 of the first order, form the 300kV millimicrosecond pulse generator of 16 grades of stacked Blumlein pulse forming lines.Wherein, 14 is the dull and stereotyped Blumlein pulse forming line of the first order, and 15 is the dull and stereotyped Blumlein pulse forming line of afterbody.
In the present embodiment, laser diode drive is fixed on platform 7 by stop screw, and stop screw 13 is one of stop screw of the fixedly laser diode drive of the second level.
Laser diode drive is fixed on platform 7 by stop screw, laser diode Output of laser hot spots at different levels can be radiated on GaAs photoconductive switchs at different levels completely, the distance of the upper surface of the light-emitting area of laser diode and GaAs photoconductive switch is 5mm, by stop screw, fixes.
Circuit theory of the present invention as shown in Figure 3,
s 1~
s 1616 photoconductive switchs that 300kV millimicrosecond pulse generator of the present invention adopts,
z 0the impedance of the solid-state Plate-Transmission-Line of single pottery,
u icharging voltage,
u oit is output high voltage pulse.Blumlein pulse forming line charged in parallels at different levels, control laser diode by external trigger technology and trigger the conducting of GaAs photoconductive switch, make dull and stereotyped Blumlein pulse forming line discharged in series at different levels, realize pulse voltage stack in noninductive ceramic resistor load.Specifically, external pulse power supply charges to voltage magnitude maximum by input high-pressure side and input grounding end to first to the 16 grade of dull and stereotyped Blumlein pulse forming line, by external trigger delay technique, control 16 laser diodes and synchronously export infrared laser, laser triggers 16 synchronous conductings of GaAs photoconductive switch, dull and stereotyped Blumlein pulse shaping line lockings at different levels are to noninductive ceramic resistor load 5 electric discharges, between the 16 grade of dull and stereotyped Blumlein pulse forming line output earth terminal 10 and the dull and stereotyped Blumlein pulse forming line output of first order high-pressure side 11, form 16 grades of superimposed pulse High voltage outputs, pulse voltage amplitude equals 16 times of charging voltage amplitudes.As shown in Figure 4, the halfwidth of this pulse voltage waveform is about 10 ns to the 300kV millimicrosecond pulse generator output waveform of 16 grades of laminated flat Blumlein pulse forming line formations, and pulse voltage amplitude is about 300kV, and has certain flat-top.
300kV millimicrosecond pulse generator integral body of the present invention is dipped in transformer oil, prevents the generation of each device edge flashing.
Claims (2)
1. a 300kV millimicrosecond pulse generator, it is characterized in that: described generator comprises the dull and stereotyped Blumlein pulse forming line of 16 single-stages, the dull and stereotyped Blumlein pulse forming line of single-stage contains ceramic solid-state Plate-Transmission-Line, GaAs photoconductive switch, laser diode triggering system, noninductive ceramic resistor load, high-voltage diode; Wherein, laser diode triggering system is comprised of laser diode drive and laser diode; Two solid-state Plate-Transmission-Lines of pottery overlap up and down, GaAs photoconductive switch electrode two ends are connected on two electrodes of a solid-state Plate-Transmission-Line input of pottery wherein, two electrodes of the solid-state Plate-Transmission-Line input of pottery, one connects input high-pressure side through high-voltage diode, and one connects input grounding end through long lead; Between the dull and stereotyped Blumlein pulse forming line output of the output high-pressure side of the dull and stereotyped Blumlein pulse forming line of the first order and afterbody earth terminal, be connected with noninductive ceramic resistor load; Laser diode triggering system is arranged on directly over GaAs photoconductive switch; The dull and stereotyped Blumlein pulse forming line of 16 described single-stages is fixed on platform, and dull and stereotyped Blumlein pulse forming lines at different levels are stacked step by step at output, the stacked certain angle that is crossed as between the adjacent dull and stereotyped Blumlein pulse shaping of single-stage line output terminal.
2. 300kV millimicrosecond pulse generator according to claim 1, is characterized in that: the angle in the stacked intersection of output between the dull and stereotyped Blumlein pulse forming line of described adjacent single-stage is 9 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410329680.1A CN104065296A (en) | 2014-07-11 | 2014-07-11 | 300-kilovolt nanosecond pulser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410329680.1A CN104065296A (en) | 2014-07-11 | 2014-07-11 | 300-kilovolt nanosecond pulser |
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| CN104065296A true CN104065296A (en) | 2014-09-24 |
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| CN201410329680.1A Pending CN104065296A (en) | 2014-07-11 | 2014-07-11 | 300-kilovolt nanosecond pulser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190834A (en) * | 2019-06-11 | 2019-08-30 | 中国工程物理研究院流体物理研究所 | A kind of single-stage and multistage pulses formation line and its induction superimposer based on glass-fiber-plate |
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| US20120098607A1 (en) * | 2010-10-21 | 2012-04-26 | Tatoian James Z | Modular microwave source |
| CN102664607A (en) * | 2012-05-14 | 2012-09-12 | 中国工程物理研究院应用电子学研究所 | Novel high-pressure square-wave pulse generating system |
| CN102931948A (en) * | 2012-08-15 | 2013-02-13 | 西北核技术研究所 | Fast switch and Blumlein line integrated high-pressure subnanosecond impulse source |
| CN103414369A (en) * | 2013-08-21 | 2013-11-27 | 中国工程物理研究院流体物理研究所 | Brew Rayne pulse-forming line voltage multiplier |
| CN204068756U (en) * | 2014-07-11 | 2014-12-31 | 中国工程物理研究院流体物理研究所 | A kind of 300kV millimicrosecond pulse generator |
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2014
- 2014-07-11 CN CN201410329680.1A patent/CN104065296A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120098607A1 (en) * | 2010-10-21 | 2012-04-26 | Tatoian James Z | Modular microwave source |
| CN102664607A (en) * | 2012-05-14 | 2012-09-12 | 中国工程物理研究院应用电子学研究所 | Novel high-pressure square-wave pulse generating system |
| CN102931948A (en) * | 2012-08-15 | 2013-02-13 | 西北核技术研究所 | Fast switch and Blumlein line integrated high-pressure subnanosecond impulse source |
| CN103414369A (en) * | 2013-08-21 | 2013-11-27 | 中国工程物理研究院流体物理研究所 | Brew Rayne pulse-forming line voltage multiplier |
| CN204068756U (en) * | 2014-07-11 | 2014-12-31 | 中国工程物理研究院流体物理研究所 | A kind of 300kV millimicrosecond pulse generator |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190834A (en) * | 2019-06-11 | 2019-08-30 | 中国工程物理研究院流体物理研究所 | A kind of single-stage and multistage pulses formation line and its induction superimposer based on glass-fiber-plate |
| CN110190834B (en) * | 2019-06-11 | 2024-05-03 | 中国工程物理研究院流体物理研究所 | Single-stage and multi-stage pulse forming wire based on glass fiber board and induction superposition device thereof |
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Application publication date: 20140924 |