CN104063005B - A kind of plasma load circuit autocontrol method - Google Patents
A kind of plasma load circuit autocontrol method Download PDFInfo
- Publication number
- CN104063005B CN104063005B CN201410261401.2A CN201410261401A CN104063005B CN 104063005 B CN104063005 B CN 104063005B CN 201410261401 A CN201410261401 A CN 201410261401A CN 104063005 B CN104063005 B CN 104063005B
- Authority
- CN
- China
- Prior art keywords
- load circuit
- plasma load
- microcontroller
- value
- setting value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of plasma load circuit autocontrol method, adopt microcontroller, microcontroller regulates input phase setting value and the incident power setting value of plasma load circuit by two-way dac channel, microcontroller is also by incident power measured value and the reflective power measured value of two-way analog to digital conversion channel acquisition plasma load circuit, by repeatedly regulating input phase setting value and the incident power setting value of plasma load circuit, can guarantee that plasma load circuit reflective power is minimum, the power that load absorbs is maximum.
Description
Technical field
The present invention relates to plasma load control method field, specifically a kind of plasma load circuit autocontrol method.
Background technology
Traditional automatic control technology utilizes additional control device, and certain duty of control object or parameter are automatically run according to predetermined rule.But be the circuit being connected to plasma load for control object, due to the instability of plasma, multiple parameters of circuit are all among constantly change, and the moving law of circuit also can change.At this moment, just a moving law cannot be preset to circuit.
summary of the inventionthe object of this invention is to provide a kind of plasma load circuit autocontrol method, to solve the problem that existing automatic control technology cannot be applicable to be connected to plasma load circuit.
In order to achieve the above object, the technical solution adopted in the present invention is:
A kind of plasma load circuit autocontrol method, it is characterized in that: adopt microcontroller, described microcontroller regulates input phase setting value and the incident power setting value of plasma load circuit respectively by two-way dac channel independent of each other, microcontroller also gathers incident power measured value and the reflective power measured value of plasma load circuit respectively by two-way analog to digital conversion passage independent of each other, comprise the following steps successively:
(1) write the input phase setting value of plasma load circuit and the initial value of incident power setting value, in the microcontroller, microcontroller regulates the input phase setting value of plasma load circuit and incident power setting value to be initial value by two-way dac channel respectively;
(2) the incident power setting value that, microcontroller fixes plasma load circuit by the second road dac channel is that initial value is constant, and the input phase setting value of plasma load circuit is changed by first via dac channel, microcontroller passes through the second tunnel analog to digital conversion channel acquisition when the input phase setting value of plasma load circuit changes simultaneously, the reflective power measured value that plasma load circuit is corresponding;
(3), microcontroller passes through comparison algorithm, find out the minimum value of each reflective power measured value collected in step (2), and by first via dac channel, the input phase set point adjustment of plasma load circuit is fixed as input phase setting value corresponding when reflective power measured value is minimum value;
(4), microcontroller by the incident power setting value of the second way mode convertion passages regulate plasma load circuit to the starting power value of plasma load circuit, and time delay a period of time;
(5) the incident power setting value that, microcontroller fixes plasma load circuit by the second road dac channel is that starting power value is constant, and the input phase setting value of plasma load circuit is changed by first via dac channel, microcontroller passes through the second tunnel analog to digital conversion channel acquisition again when the input phase setting value of plasma load circuit changes simultaneously, the reflective power measured value that plasma load circuit is corresponding;
(6), microcontroller passes through comparison algorithm, find out the minimum value of each reflective power measured value collected in step (5), and by first via dac channel by the input phase set point adjustment of plasma load circuit and input phase setting value corresponding when being fixed as that now reflective power measured value is minimum value;
(7), microcontroller is by the two-way analog to digital conversion channel acquisition now incident power measured value of plasma load circuit and reflective power measured value, and judge whether the difference of incident power measured value and reflective power measured value is less than the power-handling capability preset in the microcontroller, if be greater than this power-handling capability, then after time delay a period of time, again repetitive process from step (5), if be less than this power-handling capability, then microcontroller increases the incident power setting value of plasma load circuit by the second way mode convertion passages regulate, until the difference of incident power measured value and reflective power measured value is greater than this power-handling capability.
The invention has the beneficial effects as follows, can realize automatically controlling by plasma load circuit, guarantee that the reflective power of plasma load circuit is minimum, the power that plasma load circuit absorbs is maximum.
Accompanying drawing explanation
Fig. 1 adopts by the present invention the theory diagram of device.
Fig. 2 is the process flow diagram of the inventive method.
Embodiment
Shown in Fig. 1, Fig. 2, a kind of plasma load circuit autocontrol method, adopt microcontroller, microcontroller regulates input phase setting value and the incident power setting value of plasma load circuit respectively by two-way dac channel DAC1, DAC2 independent of each other, microcontroller also gathers incident power measured value and the reflective power measured value of plasma load circuit by two-way analog to digital conversion passage independent of each other ADC1, ADC2, comprise the following steps successively:
(1) write the input phase setting value of plasma load circuit and the initial value of incident power setting value, in the microcontroller, microcontroller regulates the input phase setting value of plasma load circuit and incident power setting value to be initial value by two-way dac channel respectively;
(2) the incident power setting value that, microcontroller fixes plasma load circuit by the second road dac channel DAC2 is that initial value is constant, and the input phase setting value of plasma load circuit is changed by first via dac channel DAC1, microcontroller gathers when the input phase setting value of plasma load circuit changes by the second tunnel analog to digital conversion passage ADC2 simultaneously, the reflective power measured value that plasma load circuit is corresponding;
(3), microcontroller passes through comparison algorithm, find out the minimum value of each reflective power measured value collected in step (2), and by first via dac channel DAC1, the input phase set point adjustment of plasma load circuit is fixed as input phase setting value corresponding when reflective power measured value is minimum value;
(4), microcontroller regulates the starting power value of incident power setting value to plasma load circuit of plasma load circuit by the second road dac channel DAC2, and time delay a period of time;
(5) the incident power setting value that, microcontroller fixes plasma load circuit by the second road dac channel DAC2 is that starting power value is constant, and the input phase setting value of plasma load circuit is changed by first via dac channel DAC1, microcontroller gathers when the input phase setting value of plasma load circuit changes by the second tunnel analog to digital conversion passage ADC2 again simultaneously, the reflective power measured value that plasma load circuit is corresponding;
(6), microcontroller passes through comparison algorithm, find out the minimum value of each reflective power measured value collected in step (5), and by first via dac channel DAC1 by the input phase set point adjustment of plasma load circuit and input phase setting value corresponding when being fixed as that now reflective power measured value is minimum value;
(7), microcontroller is by the two-way analog to digital conversion channel acquisition now incident power measured value of plasma load circuit and reflective power measured value, and judge whether the difference of incident power measured value and reflective power measured value is less than the power-handling capability preset in the microcontroller, if be greater than this power-handling capability, then after time delay a period of time, again repetitive process from step (5), if be less than this power-handling capability, then microcontroller regulates the incident power setting value increasing plasma load circuit by the second road dac channel DAC2, until the difference of incident power measured value and reflective power measured value is greater than this power-handling capability.
Claims (1)
1. a plasma load circuit autocontrol method, it is characterized in that: adopt microcontroller, described microcontroller regulates input phase setting value and the incident power setting value of plasma load circuit respectively by two-way dac channel independent of each other, microcontroller also gathers incident power measured value and the reflective power measured value of plasma load circuit respectively by two-way analog to digital conversion passage independent of each other, comprise the following steps successively:
(1) write the input phase setting value of plasma load circuit and the initial value of incident power setting value, in the microcontroller, microcontroller regulates the input phase setting value of plasma load circuit and incident power setting value to be initial value by two-way dac channel respectively;
(2) the incident power setting value that, microcontroller fixes plasma load circuit by the second road dac channel is that initial value is constant, and the input phase setting value of plasma load circuit is changed by first via dac channel, microcontroller passes through the second tunnel analog to digital conversion channel acquisition when the input phase setting value of plasma load circuit changes simultaneously, the reflective power measured value that plasma load circuit is corresponding;
(3), microcontroller passes through comparison algorithm, find out the minimum value of each reflective power measured value collected in step (2), and by first via dac channel, the input phase set point adjustment of plasma load circuit is fixed as input phase setting value corresponding when reflective power measured value is minimum value;
(4), microcontroller by the incident power setting value of the second way mode convertion passages regulate plasma load circuit to the starting power value of plasma load circuit, and time delay a period of time;
(5) the incident power setting value that, microcontroller fixes plasma load circuit by the second road dac channel is that starting power value is constant, and the input phase setting value of plasma load circuit is changed by first via dac channel, microcontroller passes through the second tunnel analog to digital conversion channel acquisition again when the input phase setting value of plasma load circuit changes simultaneously, the reflective power measured value that plasma load circuit is corresponding;
(6), microcontroller passes through comparison algorithm, find out the minimum value of each reflective power measured value collected in step (5), and by first via dac channel by the input phase set point adjustment of plasma load circuit and input phase setting value corresponding when being fixed as that now reflective power measured value is minimum value;
(7), microcontroller is by the two-way analog to digital conversion channel acquisition now incident power measured value of plasma load circuit and reflective power measured value, and judge whether the difference of incident power measured value and reflective power measured value is less than the power-handling capability preset in the microcontroller, if be greater than this power-handling capability, then after time delay a period of time, again repetitive process from step (5), if be less than this power-handling capability, then microcontroller increases the incident power setting value of plasma load circuit by the second way mode convertion passages regulate, until the difference of incident power measured value and reflective power measured value is greater than this power-handling capability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410261401.2A CN104063005B (en) | 2014-06-12 | 2014-06-12 | A kind of plasma load circuit autocontrol method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410261401.2A CN104063005B (en) | 2014-06-12 | 2014-06-12 | A kind of plasma load circuit autocontrol method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104063005A CN104063005A (en) | 2014-09-24 |
| CN104063005B true CN104063005B (en) | 2015-11-18 |
Family
ID=51550763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410261401.2A Active CN104063005B (en) | 2014-06-12 | 2014-06-12 | A kind of plasma load circuit autocontrol method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104063005B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104503533B (en) * | 2014-10-13 | 2017-01-11 | 中国电子科技集团公司第四十一研究所 | Automatic power linearity calibration method based on signal generator |
| JP7216617B2 (en) * | 2019-06-14 | 2023-02-01 | シャープ株式会社 | Dielectric heating system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1233147A (en) * | 1998-02-09 | 1999-10-27 | 恩尼技术公司 | Ratiometric autotuning algorithm for RF plasma generator |
| WO2010032345A1 (en) * | 2008-09-17 | 2010-03-25 | パナソニック株式会社 | Microwave heating device |
| CN102428751A (en) * | 2009-05-19 | 2012-04-25 | 松下电器产业株式会社 | Microwave heating device and microwave heating method |
| CN102830745A (en) * | 2012-08-27 | 2012-12-19 | 常州瑞思杰尔电子科技有限公司 | Closed-loop control circuit of radio-frequency power supply |
-
2014
- 2014-06-12 CN CN201410261401.2A patent/CN104063005B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1233147A (en) * | 1998-02-09 | 1999-10-27 | 恩尼技术公司 | Ratiometric autotuning algorithm for RF plasma generator |
| WO2010032345A1 (en) * | 2008-09-17 | 2010-03-25 | パナソニック株式会社 | Microwave heating device |
| CN102428751A (en) * | 2009-05-19 | 2012-04-25 | 松下电器产业株式会社 | Microwave heating device and microwave heating method |
| CN102830745A (en) * | 2012-08-27 | 2012-12-19 | 常州瑞思杰尔电子科技有限公司 | Closed-loop control circuit of radio-frequency power supply |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104063005A (en) | 2014-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103391015B (en) | A kind of variable parameter PI regulator parameter method of adjustment | |
| WO2014080337A3 (en) | Signal-level based control of power grid load systems | |
| EP2852018A3 (en) | Inrush control with multiple switches | |
| WO2011080702A3 (en) | Power factor corrector with high power factor at low load or high mains voltage conditions | |
| US20130106370A1 (en) | Method and device for controlling soft start of a power supply | |
| WO2014077958A3 (en) | Feed forward current mode switching regulator with improved transient response | |
| WO2014035771A3 (en) | System and method of adjusting a clock signal | |
| JP2014512801A5 (en) | ||
| WO2011149632A3 (en) | Driver with accurately controlled slew rate and limited current | |
| WO2006134848A3 (en) | Voltage conversion device | |
| CN104063005B (en) | A kind of plasma load circuit autocontrol method | |
| EP2811653A3 (en) | Digital power gating with state retention | |
| CN103746552B (en) | Control system and control method for stepless current limiting of switch power supply | |
| WO2013170287A3 (en) | Method for controlling a power source, and power source and process controller therefor | |
| CN202978706U (en) | Digital power based on FPGA | |
| TW201614941A (en) | Voltage converting controller and method of voltage converting control | |
| WO2014164755A3 (en) | Quantization error reduction in constant output current control drivers | |
| CN103248251A (en) | Automatic variable coefficient control method for inverter | |
| JP2017527954A5 (en) | ||
| TWI525974B (en) | DC/DC converter current compensation control method based on slitting and trimming | |
| CN203933571U (en) | The automatic adjustable clock multiplier circuit of a kind of duty ratio | |
| WO2014124883A3 (en) | Method of switching a semiconductor device | |
| WO2012041593A3 (en) | Recovery method for a device having an analogue current output for outputting a measured value or a manipulated variable | |
| CN105978432A (en) | Method of improving six-axis industrial robot current loop bandwidth | |
| CN204304862U (en) | Fast torque follow-up control circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |