CN1040556C - Target making process of low-activity surface-intensity radioactive source - Google Patents

Target making process of low-activity surface-intensity radioactive source Download PDF

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Publication number
CN1040556C
CN1040556C CN94105880A CN94105880A CN1040556C CN 1040556 C CN1040556 C CN 1040556C CN 94105880 A CN94105880 A CN 94105880A CN 94105880 A CN94105880 A CN 94105880A CN 1040556 C CN1040556 C CN 1040556C
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China
Prior art keywords
iridium
tin
tic
film
grain
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Expired - Fee Related
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CN94105880A
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Chinese (zh)
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CN1099813A (en
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山常起
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China Institute of Atomic of Energy
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China Institute of Atomic of Energy
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Publication of CN1040556C publication Critical patent/CN1040556C/en
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Abstract

The present invention relates to a target-making process of low-activity surface strong radioactive source, and is characterized by that after the processes of cutting, polishing and cleaning, the surface of iridium grain is plated with TiN + TiC + TiN composite film by means of evaporation deposition method, and the film and base material are alloyed. The composite film plated on the surface of the iridium source core manufactured by the new process is tightly combined with a base material, is radiation-resistant, high-temperature-resistant and low-activity, and after irradiation, the radioactive powder on the surface of the source core is rarely dropped, thereby meeting the medical standard. The iridium grain produced by the method has low cost, good quality, and remarkable economic and social benefits.

Description

Low activity surface strong radiation source target making technology
The invention belongs to the plating technic field of metallic substance, be specifically related to a kind of system target technology of low activity surface strong radiation source.
Radioactive source treatment cancer was adopted by people in 1901, used radium-226, cobalt-60, caesium-137 at first, radioactive source is put into body carry out close-range treatment, begin is to use the hand loading of source by the medical worker, this kind method can only be operated the radioactive source of low dose rate, and is long to the patient time, weak curative effect.Developed into afterwards by machine loading of source in the patient body, be called afterloading source.Along with the reach of science, lead to the electrical integrated afterloading source treatment machine of company's kickoff mechanism from the end of the eighties by Holland's nuclear, be characterized in by computer-controlled high intelligent distant control operation.The radioactive source that is used for the treatment of cancer can be done to such an extent that volume is little, and activity is big, and general in the world radioactive source is the miniature source of Φ 1.1 * 6.5mm at present, and activity is up to the iridium-192 of 10Ci.
China has introduced this kind treatment machine, because the source transformation period of its use has only 72 days, needs often to change, but this iridium-192 source, domestic can not production needs import, and costs an arm and a leg.This provenance production difficulty is big, requires high.Therefore provenance directly contacts with the internal organs of treatment, requires to produce surface, the source radionuclide contamination of Φ 1.1 * 6.5mm less than 180Bg.Be difficult to reach this requirement with traditional system target technology.Use traditional technology to produce the source of 100Ci, irradiation opisthogenesis wicking surface radiation powder comes off up to 22.5mCi, the most close with the present invention by retrieval document is that U.S. Pat 4497874 discloses at the cobalt metal skin and plates the TiN+TiC layer process, is used for the cutting tool field.Japan's non-patent literature discloses the production technique in iridium-192 source that is used for the treatment of tumour, at the surperficial platinum plating layer of iridium.Above document all has the different of essence with the present invention.
The object of the present invention is to provide a kind of irradiation opisthogenesis wicking surface radioactive powder to come off seldom, the novel system target technology of low activity surface strong radiation source.
Technical scheme of the present invention is as follows:
It with diameter the iridium wire of 0.5-1mm is cut into 1-5mm length with wire cutting machine iridium grain, because the iridium grain otch that downcuts is jagged, adding diameter with the powder emery of 0.149~0.037mm again is the agate ball of 5-10mm on ball mill ball milling 24-72 hour, burr is ground off, otch is worn into garden shape, and with the polishing of 0.04mm glass powder, scavenging solution cleans again, dehydration of alcohol, fluorine cleans in Lyons.
Pack in the netted film coating apparatus cleaned iridium grain promptly that size is equipped with in the stainless (steel) wire cylinder of Φ 0.3mm aperture on Φ 76 * 200mm wall into, the cylinder that the iridium grain will be housed is again put into coating equipment, carries out plated film, and coating equipment is Japanese import IPB30/30 TType evaporation coating machine.This process using evaporation deposition method carries out plated film, is provided with heating unit in the coating equipment Ti is melted, and makes it become steam, and the rotation that the iridium grain does not stop with 5-10 rev/min speed when the iridium grain is heated to 450-600 ℃, deposits about 400-600A earlier on the iridium grain θTi, titanium layer thickness can be read on coating equipment.Feed N subsequently routinely 2Gas generates the thick TiN film of about 0.5-1.5 μ m, feeds C more routinely 2H 2Gas generates the thick TiN+TiC composite membrane of about 2.5 μ m-3.5 μ m.Feed N again 2, generate 3-4 μ mTiN+TiC+TiN composite membrane, the iridium grain behind the plated film at 300-450 ℃ at H 2Annealing is 10-7 days in the atmosphere, generates the blocking layer (CH that stops the iridium atom diffusion in the TiN lattice 4) -Film thickness all can be by reading on the coating equipment.Iridium grain behind the plated film is put into reactor more routinely and is shone, and the neutron flux of irradiation is 1 * 10 14-1 * 10 15N/cm 2S, irradiation time is 60-7 days.Take out the packing of heat release chamber then, welding gets final product.
With the iridium source core that this novel process is made, upper layer alloying, and have anti-irradiation, resistant to elevated temperatures advantage, composite membrane and iridium matrix consistency are good, uniform film thickness, source core surface low activity, its radioactive powder of iridium source of producing 100Ci comes off and has only 2.95 * 10 -3MCi, source surface wiping dosage is significantly less than 180Bg, fully conformance with standard.The source quality that the present invention produces is good, cost is low, 3 yuan/.Little to the production site radiocontamination, price is 2000 dollars/on the world market.
The afterloading source of manufacturing of the present invention offers Cancer Hospital of Chinese Academy of Medical Sciences, 301 Hospital of PLA, and unit clinic trial such as 307 hospitals, respond well, reach external like product level.And detect through China Atomic Energy Science Research Institute's Isotope Research, quality meets the requirements fully.
The present invention has following embodiment:
The iridium wire of Φ 0.7 is cut into the iridium grain of Φ 0.7 * 4mm with wire cutting machine tool, use 0.037mm powder emery and Φ 5mm agate ball 10: 1 ball milling 72 hours on ball mill again, polish with the 0.037mm glass sand again, clean through scavenging solution, dehydration of alcohol, clean with fluorine Lyons, the Φ 76 * 200mm that at last the iridium grain packed into has in the stainless (steel) wire cylinder of Φ 0.3mm aperture again, and the cylinder that the iridium grain will be housed is again put into coating equipment and carried out plated film.The coating equipment inner heating device melts Ti, forms the Ti steam, and cylinder gyrates with 5 rev/mins of speed, when the iridium grain is heated to 450 ℃, deposits 500A on the iridium grain θTi, can be by reading on the coating equipment.Feed N more routinely 2Gas generates the thick TiN film of 1 μ m, feeds C more routinely 2H 2Gas generates the thick TiN+TiC of 2.5 μ m.Feed N again 2, generate 3 μ m TiN+TiC+TiN composite membranes, the iridium grain behind the plated film at 350 ℃ at H 2Annealing is 7 days in the atmosphere, generates the blocking layer (CH that stops the iridium atom diffusion in the TiC lattice 4) -Iridium grain behind the plated film is put into reactor routinely and is shone, and in heavy water reactor, neutron flux is 1 * 10 14n/ cm 2Irradiation is 60 days under the condition of S, takes out packing then and gets final product.Iridium grain source core goes out heap behind 60 days irradiation, need source core is carried out 20 minutes ultrasonic cleaning before the source of doing, and the result who cleans for the source core of 100Ci shows that the radioactivity that washes down has only 2.95 * 10 -3MCi.
In order to simulate heap according to iridium grain source core, film and matrix thermal shock resistance will plate the iridium grain of TiN+TiC+TiN composite membrane, 500 ℃ of insulation annealings are 4 months in air, for simulation stops, reactor startup iridium grain variation of temperature,, drop to room temperature by 500 ℃ taking out rapidly through 4 months iridium grain of 500 ℃ of annealing, on electronic probe, amplify 3000 times of observations then, it is intact that film and matrix still combine, and confirms that the film and the matrix consistency of plating with this technology are good, heat shock resistance.

Claims (3)

1. low activity surface strong radiation source target making technology, the cutting, ball milling, cleaning, the filming process that comprise iridium wire is characterized in that the iridium grain being packed in the film coating apparatus of vacuum plating unit into slow rotation, adopt evaporation deposition method to follow these steps at iridium grain surface lining TiN+TiC+TiN composite membrane
A. at first on the iridium grain, deposit 400-600A θTitanium, the Heating temperature of iridium grain is 450-600 ℃
B. generate the thick TiN film of 0.5-1.5 μ m
C. generate the thick TiN+TiC film of 2.5-3.5 μ m
D. generate the thick TiN+TiC+TiN composite membrane of 3-4 μ m
E. the iridium grain behind the plated film is at 300-450 ℃ of H 2Annealing is 10-7 days in the atmosphere, generates the blocking layer (CH that stops the iridium atom diffusion in the TiC lattice 4) -
2. low activity surface strong radiation source target making technology according to claim 1 feeds N routinely when it is characterized in that generating the TiN film 2Gas feeds C routinely when generating the TiN+TiC composite membrane 2H 2Gas when generating 3-4 μ mTiN+TiC+TiN composite membrane, feeds N again 2
3. low activity surface strong radiation source target making technology according to claim 1 is characterized in that netted film coating apparatus velocity of rotation in coating equipment is 5-10 rev/min.
CN94105880A 1994-06-01 1994-06-01 Target making process of low-activity surface-intensity radioactive source Expired - Fee Related CN1040556C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN94105880A CN1040556C (en) 1994-06-01 1994-06-01 Target making process of low-activity surface-intensity radioactive source

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Application Number Priority Date Filing Date Title
CN94105880A CN1040556C (en) 1994-06-01 1994-06-01 Target making process of low-activity surface-intensity radioactive source

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CN1099813A CN1099813A (en) 1995-03-08
CN1040556C true CN1040556C (en) 1998-11-04

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106875999B (en) * 2017-01-03 2019-01-29 中国原子能科学研究院 One kind is for irradiating production fission99The slightly enriched uranium uranium foil target part of Mo

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170821A (en) * 1985-02-08 1986-08-13 Citizen Watch Co Ltd Mixed nitride/carbide film formed by ion plating
CN1055957A (en) * 1991-04-20 1991-11-06 中国科学院电工研究所 Ion plating technology for titanium carbonitride coatings
US5116694A (en) * 1985-01-21 1992-05-26 Sumitomo Electric Industries, Ltd. Coated cemented carbides

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116694A (en) * 1985-01-21 1992-05-26 Sumitomo Electric Industries, Ltd. Coated cemented carbides
GB2170821A (en) * 1985-02-08 1986-08-13 Citizen Watch Co Ltd Mixed nitride/carbide film formed by ion plating
CN1055957A (en) * 1991-04-20 1991-11-06 中国科学院电工研究所 Ion plating technology for titanium carbonitride coatings

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