CN104051384B - The method for packing and device of semiconductor devices - Google Patents
The method for packing and device of semiconductor devices Download PDFInfo
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- CN104051384B CN104051384B CN201310359548.0A CN201310359548A CN104051384B CN 104051384 B CN104051384 B CN 104051384B CN 201310359548 A CN201310359548 A CN 201310359548A CN 104051384 B CN104051384 B CN 104051384B
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- layer
- conductive layer
- crystal seed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
Abstract
The invention discloses the redistributing layer in packaging（RDL）The method and apparatus that place reduces stress concentration.Packaging can include being located at the crystal seed layer above passivation layer, to cover the opening of passivation layer, and cover contact pad and contacted with contact pad.It is square over the passivation layer to be located above crystal seed layer and contacted with crystal seed layer into RDL, RDL, to cover the opening of passivation layer, and contact pad is electrically connected to by crystal seed layer.RDL has the end of the smooth surface comprising on-right angle.RDL end surface can have obtuse angle or curved surface.
Description
The cross reference of related application
This application claims entitled " the Methods and Apparatus of submitted on March 13rd, 2013
The priority of Packaging Semiconductor Devices " U.S. Provisional Patent Application the 61/779th, 663, its is complete
Portion's content is hereby expressly incorporated by reference.
Technical field
The present invention relates to semiconductor applications, more particularly, to the method for packing and device of semiconductor devices.
Background technology
Semiconductor devices is used for various applications, and such as personal computer, mobile phone, digital camera and other electronics are set
It is standby.Semiconductor devices is segmented into by device（Such as integrated circuit（IC）Tube core, packaging part, printed circuit board (PCB)（PCB）Be
System）The simple hierarchy constituted.Packaging part is the interface between IC tube cores and PCB.IC tube cores are by such as silicon
Semi-conducting material is made.Then, tube core is assembled into packaging part.Then, package die is attached directly to PCB or another linings
Bottom, so as to be defined as second level encapsulation.
More components are allowed to be integrated into given area by the continuous reduction of minimal parts size, semi-conductor industry is continuous
Improve various electric parts（Transistor, diode, resistor, capacitor etc.）Integration density.With past packaging part phase
Than these less electric parts are also required to the less packaging part using less area.Some for semiconductor devices are smaller
The packaging part of type includes the flat package in side（QFP）, pin grid array（PGA）, ball grid array（BGA）, flip-chip（FC）, it is three-dimensional
Integrated circuit（3DIC）, wafer-level packaging part（WLP）, crystal wafer chip dimension encapsulation part（WLCSP）And stacked package（PoP）
Device.
In typical manufacturing process, active device and passive device can be manufactured in substrate, and by such as being formed
The interconnection architecture of metal contact element on metal layer and dielectric layer connects active device and passive device.On metal layer
It is square into contact pad to be fabricated onto the connection of packaging part.Generally, can be by redistributing layer（RDL）Or cross tie part after passivation
（PPI）Wiring for connecting contact pad, then, forms the UBM pads for being connected to RDL, and the formation weldering on UBM pads
Ball is to set up chip（Such as i/o pads）Contact pad and packaging part substrate or lead frame between electrical contact
Part.
It was found that the encapsulating structure produced by typical manufacturing process has the passivation caused by the stress concentration at RDL
The problem of layer layering.Need to reduce the method and apparatus of the stress concentration at RDL to solve the passivation layer lamination problem of packaging part.
The content of the invention
To solve the above problems, the invention provides a kind of packaging, including：Contact pad, positioned at the surface of substrate
On；Dielectric layer, positioned at the surface of substrate, with the opening for exposing contact pad；And conductive layer, on dielectric layer
Side, covers the opening of dielectric layer, and is electrically connected to contact pad, wherein, conductive layer include crystal seed layer and with comprising top surface and
The end of side wall, side wall is extended with on-right angle away from substrate, and side wall is intersected with top surface with on-right angle.
Wherein, the top surface of the end of conductive layer has obtuse angle or curved surface.
Wherein, the end of conductive layer is stairstepping, and the top surface of the end of conductive layer has obtuse angle or curved surface.
Wherein, conductive layer is basic conforma layer, and thickness of the conductive layer positioned at the part of dielectric layer, which is substantially equal to, leads
Electric layer is located at the thickness in the opening of dielectric layer.
Wherein, conductive layer is included selected from basic by Ti, Al, Ni, vanadium nickel（NiV）, Cu, Cu alloy and combinations thereof institute
The conductive material of the group of composition.
Wherein, the thickness of dielectric layer is greater than about 5 μm.
Wherein, the obtuse angle of the top surface of the end of conductive layer is in the range of about 91 ° to about 120 °.
The device further comprises：Second insulating barrier, above conductive layer, the second insulating barrier, which has, exposes conductive layer
Opening；And under-bump metallization（UBM）Pad, is formed in the opening of the second insulating barrier and and conductive layers make contact.
In addition, a kind of method for forming packaging is additionally provided, including：Substrate is provided, on a surface of the substrate
With contact pad；Dielectric layer is formed on a surface of the substrate, and dielectric layer has the opening for exposing contact pad；On the dielectric layer
It is square into crystal seed layer, to cover the opening of dielectric layer, cover contact pad and contacted with contact pad；On the seed layer it is square into
Photoresist layer, photoresist layer, which has, includes light-sensitive compound（PAC）Other substrate materials；It is square into covering crystal seed on the seed layer
The photoetching agent pattern at the two ends of layer；In the region for the photoetching agent pattern covering not contacted above crystal seed layer and with crystal seed layer
Middle formation conductive layer, to cover the opening of dielectric layer, and is electrically connected to contact pad by crystal seed layer, wherein, conductive layer has
End close to the end of photoetching agent pattern, and conductive layer has the smooth top surface of on-right angle；And remove photoetching agent pattern.
Wherein：It is square into the photoetching including being formed the step of photoetching agent pattern with the surface comprising acute angle on the seed layer
Glue pattern；And in the region for not being photo-etched glue pattern covers formed conductive layer the step of include formed close to photoetching agent pattern
Conductive layer with end, the end of conductive layer has the top surface comprising obtuse angle.
Wherein：On the seed layer it is square into photoetching agent pattern the step of include：It is square into the first photoresist on the seed layer
Pattern；It is square into the second photoetching agent pattern on the seed layer, and the second photoetching agent pattern surround by the first photoetching agent pattern, its
In, the surface of the second photoetching agent pattern is less than the surface of the first photoetching agent pattern；Formation is connected to the first photoetching agent pattern and position
The 3rd photoetching agent pattern above the second photoetching agent pattern；And the second photoetching agent pattern is removed, while keeping the first photoetching
Glue pattern and the 3rd photoetching agent pattern are complete；And the step of conductive layer is formed in the region for not being photo-etched glue pattern covers is wrapped
Include：The Part I of conductive layer is formed, to fill the first photoresist figure not contacted above crystal seed layer and with crystal seed layer
The region of case covering, covers the opening of dielectric layer, and is electrically connected to contact pad by crystal seed layer；And the first of conductive layer
The Part II of upper formation conductive layer, to fill the region not covered by the 3rd photoetching agent pattern, the second of conductive layer
Part has close to the end of the 3rd photoetching agent pattern, and end has the smooth top surface comprising on-right angle.
This method further comprises：The first insulating barrier is formed between dielectric layer and crystal seed layer.
This method further comprises：It is square into the second insulation on the electrically conductive after the step of removing photoetching agent pattern
Layer；The opening of the second insulating barrier is formed, to expose conductive layer；And formed in the opening of the second insulating barrier and and conductive layer
The under-bump metallization of contact（UBM）Pad.
Wherein, on the dielectric layer it is square into crystal seed layer the step of include：Using selected from substantially include Cu, Ti, TiN, Ta,
Conductive material in the group that TaN, Cr, CrN, W, WN and combinations thereof are constituted forms crystal seed layer.
Wherein, the step of forming conductive layer includes：Using selected from substantially including Ti, Al, Ni, vanadium nickel（NiV）、Cu、Cu
Conductive material in the group that alloy and combinations thereof are constituted forms conductive layer.
In addition, a kind of packaging is additionally provided, including：Contact pad, on the surface of substrate；Dielectric layer, is located at
The surface of substrate, with the first opening for exposing contact pad；First insulating barrier, positioned at dielectric layer and and dielectric layer
Contact, fills the part of the first opening and is open to expose contact pad with second；And conductive layer, positioned at the first insulating barrier
Top, and the contact pad being electrically connected in the second opening, conductive layer include crystal seed layer and with the comprising top surface and side wall
One end, the angle between top surface and side wall is more than 90 degree, and side wall is extended with non-90 degree angle away from substrate.
Wherein, conductive layer has the second end for including curved surface top surface.
The device further comprises：Second insulating barrier, above conductive layer, wherein, the second insulating barrier, which has to expose, leads
The opening of electric layer；And under-bump metallization（UBM）Pad, is formed in the opening of the second insulating barrier and and conductive layers make contact.
Wherein, the first end of conductive layer is including the Part I positioned at dielectric layer, above Part I
Part II, and the top surface of the Part II of the end of conductive layer has obtuse angle or curved surface.
Wherein, conductive layer is basic conforma layer, and the thickness that conductive layer is located at the part above the first insulating barrier is substantially first-class
It is located at the thickness in the second opening in conductive layer.
Brief description of the drawings
In order to which the present invention and its advantage is more fully understood, the following description now carried out with reference to accompanying drawing as reference,
Wherein：
Fig. 1（a）To Fig. 1（d）Show the sectional view of the semiconductor packing device according to some embodiments；
Fig. 2（a）To Fig. 2（e）Show the sectional view for the technique that semiconductor packing device is formed according to some embodiments；With
And
Fig. 3（a）To Fig. 3（h）Show section for another technique that semiconductor packing device is formed according to some embodiments
Face figure.
Unless otherwise stated, the respective digital and label in different accompanying drawings generally represent corresponding part.Draw attached
Figure is not necessarily drawn to scale with the related fields of clearly preferred embodiment.
Embodiment
Below, the manufacture of embodiments of the invention is discussed in detail and uses.It should be appreciated, however, that embodiments of the invention
There is provided many applicable concepts that can be realized in various specific environments.The specific embodiment discussed illustrate only
Manufacture and the concrete mode using the present invention, rather than limitation the scope of the present invention
The invention discloses the redistributing layer for reducing packaging（RDL）The stress concentration and reduction packaging part at place
Passivation layer layering method and apparatus.Packaging can include being located at the crystal seed layer above passivation layer, to cover passivation layer
Opening, and cover contact pad and contacted with contact pad.RDL formation over the passivation layer above side and crystal seed layer and with
Crystal seed layer is contacted, and to cover the opening of passivation layer, and is electrically connected to contact pad by crystal seed layer.RDL end is on-right angle
Smooth surface.The surface of RDL ends can have obtuse angle or curved surface.With having rectangular conventional surface phase in RDL end
Than this kind of smooth surface of RDL end can reduce the stress concentration at RDL.On the other hand, improve packaging can
By property.
It should be understood that when element or layer be referred to as being located at another element or layer " on ", " being connected to " or " being coupled to " it is another
When element or layer, it on another element or layer or can be directly connected or coupled to another element or layer, or
Can have intermediary element or layer.As a comparison, being referred to as " on another element or layer " when element, " being directly connected to
To " or when " coupling directly to " another element or layer, then without intermediary element or layer.
Although it should be understood that term first, second, third, etc. can be used for describing various elements, part, area herein
Domain, layer and/or part, but these elements, part, region, layer and/or part should not be defined by this kind of term.This
A little terms are only used for distinguishing a kind of element, part, region, layer or part and another region, layer or part.Therefore, do not carrying on the back
In the case of teaching from concept of the present invention, the first element as described below, part, region, layer or part can be referred to as the
Two element, part, region, layer or part.
For the ease of description, " in ... lower section ", " ... under ", " bottom ", " in ... top ", the space such as " top "
Relative positional terms can be used for a description element as depicted or part and another herein（Or other）Member
The relation of part or part.It should be understood that in addition to the orientation described in figure, these relative space position terms are intended to include device
Different azimuth in use or operation.If for example, the device in upset accompanying drawing, is described as in other elements or part " it
Under " or the element of " lower section " " top " of other elements or part will be oriented in.Therefore, exemplary term " in ... top " or
" ... under " two kinds of orientation of above and below can be included in.Device can be otherwise oriented（It is rotated by 90 °
Or in other orientation）, and correspondingly explain descriptor herein for relative space position.
Term used herein is only used for describing specific exemplary embodiment and is not used in the general of the limitation present invention
Read.Unless be separately clearly described in context, otherwise singulative " one used herein（a）", " one（an）" and " this
It is individual（the）" be also used for including plural form.It will be further understood that term " comprising " and/or " including "（When in this kind of theory
When being used in bright book）, specify and there is defined part, integer, step, operation, element and/or part, but be not excluded for existing
Or extra one or more miscellaneous parts, integer, step, operation, element, part and/or their group.
" one embodiment " or " some embodiment " is quoted throughout the specification means that at least one embodiment includes
Particular elements, structure or the feature described on the embodiment.Therefore multiple positions in whole this specification occur
Phrase " in one embodiment " or " in certain embodiments " be not necessarily all referring to same embodiment.Moreover, at one or many
Particular elements, structure or feature can be combined in any suitable manner in individual embodiment.It should be understood that the following drawings does not have
Have drawn to scale；And these accompanying drawings are merely to illustrate.
Fig. 1（a）To Fig. 1（d）Show the sectional view of packaging 100.Packaging 100 includes substrate 101, positioned at lining
Active device 102 in bottom 101 and the contact pad on substrate 101 105, these devices are included in packaging part 100
Interior integrated circuit（IC）A part.Passivation layer 103 covers substrate 101, with the opening for exposing contact pad 105.First
Insulating barrier 107 is formed in the top of passivation layer 103 and with the opening for exposing contact pad 105.Crystal seed layer 109 forms exhausted first
Contact above edge layer 107 and with the first insulating barrier 107, to cover the opening of the first insulating barrier 107 and be connect with contact pad 105
Touch.Interconnected after passivation（PPI）Line 111（It is properly termed as redistributing layer（RDL）111）Formed in the top of crystal seed layer 109 and and crystal seed
Layer 109 is contacted, and is interconnected after passivation（PPI）Line 111 follows the profile of crystal seed layer 109 and covering contact pad 105.In the first insulation
Another insulating barrier 113 is formed on layer 107, to cover RDL111 and crystal seed layer 109.Insulating barrier 113 is with optional projection
Lower metallization（UBM）Pad 115 sets such as soldered ball（It is not independently illustrated）Joint outer part position at there is opening.Hereafter
Each part will be described in further detail.
Such as Fig. 1（a）To Fig. 1（d）It is shown, device 100 can be formed by silicon or other bulk semiconductor materials manufacture
On substrate 101.Device 100 can be a part for the basic semiconductor crystal wafer comprising unshowned extra semiconducter IC.Device
Part 100 can include active device and passive device, such as according to active device 102, conductive layer and the Jie of the electricity design of circuit
Electric layer.Device 100 is only used for showing a contact pad 105 by RDL111.Device 100 can include according to its Functional Design
The multiple contact pads connected by RDL network.According to the function of semiconductor devices, electric signal by RDL network from
Device 100 is sent to one or more solder projections on UBM.
Substrate 101 can include silicon-on-insulator substrate（SOI）Active layer or bulk silicon（Adulterate or undoped
's）.Generally, SOI substrate includes such as silicon, germanium, SiGe, SOI, sige-on-insulator（SGOI）Or combinations thereof is partly led
Body material layer.Other substrates that can be used include MULTILAYER SUBSTRATE, gradient and sink to the bottom or mix orientation substrate.Substrate 101 can be wrapped
Include active device 102, the shallow trench isolation of such as transistor（STI）Region and other passive devices.
Using patterning and depositing operation, conductive layer is formed contact pad 105.Device 100 can have its surface
On multiple contact pads 105.Contact pad 105 can be by aluminium（Al）, copper（Cu）, tin（Sn）, nickel（Ni）, gold（Au）, silver
（Ag）Or other conductive materials are made.The deposition of contact pad 105 uses electrolysis plating or electroless plating.Contact pad 105
Size, shape and position be only used for the purpose shown and be not used in be defined.Multiple contact pads of device 100（Do not show
Go out）Can be identical size or different sizes.
It can be formed on the surface of the substrate 101 for structural support and physics on side and the top of contact pad 105
The passivation layer 103 of isolation（It can be dielectric layer）.Passivation layer 103 can be by silicon nitride（SiN）, silica（SiO2）, nitrogen oxygen
SiClx（SiON）, polyimides（PI）, benzocyclobutene（BCB）, polybenzoxazoles（PBO）Or other insulating materials are made.Can
A part for passivation layer 103 is removed with the photoresist etch process limited by using mask, to manufacture opening for passivation layer 103
Mouthful, so as to expose the part of contact pad 105, and at the same time still cover the other parts of contact pad 105.Passivation layer 103
Thickness can be all as between in the range of about 5 μm to 20 μm in the range of greater than about 5 μm.Size, the shape of the opening of manufacture
Shape and position are for illustrative purposes only and be not used in and be defined.
First insulating barrier 107 can be formed in the top of passivation layer 103, and it follows the profile of passivation layer 103, fills Contact welding
The outs open of the passivation layer 103 of the top of disk 105.First insulating barrier 107 can be with the blunt of the endless top of full packing contact pad 105
Change the opening of layer 103, a part for exposing contact pad 105 can be conversely patterned to form to first insulating barrier
Opening, and at the same time still cover the remainder of contact pad 105.The patterning of first insulating barrier 107 can include photoetching
Technology.First insulating barrier 107 can be by such as epoxy resin, polyimides, benzocyclobutene（BCB）, polybenzoxazoles（PBO）
Deng polymer formed, but it is also possible to use other relatively soft materials（It is typically organic）Dielectric material.Forming method
Including spin coating or other conventional methods.For example, the thickness of the first insulating barrier 107 can be between about 5 μm and about 30 μm.
Cited size is only example in entire disclosure, and will be changed with the diminution of integrated circuit.
Crystal seed layer 109 is formed in the top of the first insulating barrier 107 and contacted with the first insulating barrier 107, to cover the first insulation
Layer 107 opening and contacted with contact pad 105.Use PVD（PVD）Technique or chemical vapor deposition（CVD）Work
Skill, crystal seed layer 109 can by such as Cu, Ti, TiN, Ta, TaN, Cr, CrN, W, WN conductive material or some other conduction materials
Material.The thickness of crystal seed layer 109 can be between about 10 angstroms（）ExtremelyIn the range of and preferred thickness between about 50 toIn the range of.Crystal seed layer 109 is essentially conforma layer, and wherein crystal seed layer 109 is located on the first insulating barrier 107 or passivation layer
The thickness of part on 103 is substantially equal to crystal seed layer 109 positioned at the first insulating barrier 107 or the side wall of the opening of passivation layer 103
On vertical component thickness, and also substantially equal to crystal seed layer 109 be located at the first insulating barrier 107 opening in thickness（With
In covering contact pad）.
RDL111 formation is contacted in the top of crystal seed layer 109 and with crystal seed layer 109, and RDL111 follows the profile of crystal seed layer 109,
And covering contact pad 105.RDL111 can be by such as Ti, Al, Ni, nickel vanadium（NiV）, Cu or Cu alloys manufacture.Forming method
Including electrolysis plating, electroless coating, sputtering, CVD method, PVD methods etc..RDL111 can be made up of individual layer or by using such as
The multilayer of Ti, TiW or Cr adhesive layer is made.RDL111 may be substantially of conforma layer, and wherein RDL111 is located at the first insulating barrier
The thickness of part on the crystal seed layer 109 of 107 tops is substantially equal to RDL111 on the side wall of the opening of the first insulating barrier 107
Vertical component thickness, and also substantially equal to RDL111 be located at the first insulating barrier 107 opening in thickness, with cover connect
Touch pad 105.Alternatively, RDL can have flat surfaces and not be therefore conforma layer.RDL111 height can be between for example
Between about 2 μm to about 10 μm, or betweenExtremelyIn the range of.The RDL111 shown height is merely to illustrate
The purpose of property rather than it is defined.
The crystal seed layer 109 and RDL111 of the top of first insulating barrier 107 can have narrow/wide or wedge shape（When passing through cross section
During observation）, and can have substantially invariable width and length.
Such as Fig. 1（a）To Fig. 1（d）Shown, RDL111 is located at the top of crystal seed layer 109.RDL111 end 209 and 211 has
The smooth top surface of on-right angle.Such as Fig. 1（a）To Fig. 1（d）Shown, the smooth top surface of RDL111 end 209 and 211 can have
Diversified forms.Except Fig. 1（a）To Fig. 1（d）Outside shown form, there can also be various other modes to be formed with on-right angle
The RDL111 of smooth top surface end, all mode aforesaid ways are included within the scope of the present invention.
For example, such as Fig. 1（a）Shown, the top surface of end 209 has obtuse angle 201 to replace the right angle generally having.
Similar obtuse angle 203 is formed at the top surface of RDL111 the other end 211.Angle 201 and 203 can be similar angle or difference
Angle, and can have angular range in various embodiments.For example, in certain embodiments, obtuse angle 201 and obtuse angle
203 can be in the range of about 91 ° and about 95 °, and in other embodiments, obtuse angle 201 and obtuse angle 203 can be between about
In the range of 96 ° to about 100 °, or can be in the range of about 101 ° to about 105 °, it might even be possible between about 106 ° to about
In the range of 120 °.
Alternatively, in such as Fig. 1（b）In another shown embodiment, RDL111 end 209 and 211, which can have, to be divided
The smooth corner of curved surface 201 and 203 is not included.Fig. 1（a）And Fig. 1（b）Two shown embodiments are all flat with on-right angle
The example of the RDL111 of sliding top surface end.
Still alternatively, such as Fig. 1（c）Shown, RDL111 can include two parts positioned at end, i.e. at one end positioned at crystalline substance
Plant the RDL111 of the top of layer 109 end section 209 and end section 1113.End section 1113 is located at the upper of crystal seed layer 109
Contact just and with crystal seed layer 109, and the edge at the edge of end section 1113 and crystal seed layer 109 is substantially aligned.End section 209
Positioned at the top of end section 1113, and be narrower than end section 1113 so that the part on the surface of end section 1113 not by
End section 209 is covered.End section 1113 can the standard rectangular surface with smooth top surface or comprising right angle.Terminal part
Divide 209 smooth top surfaces can with on-right angle.For example, end section 209, which can have, includes such as Fig. 1（c）Shown obtuse angle
201 top surface, or with including such as Fig. 1（d）The top surface of shown curved surface 201.
Similarly, such as Fig. 1（c）Shown, RDL111 the other end includes two parts, i.e. RDL111 is located at crystal seed layer 109
The top of end 207 end section 211 and end section 1115.End section 1115 be located at the top of crystal seed layer 109 and with crystalline substance
Layer 109 is planted to contact, and the edge at the edge of end section 1115 and crystal seed layer 109 is substantially aligned.End section 211 is located at end
The top of part 1115, and end section 1115 can be narrower than so that the part on the surface of end section 1115 is not by terminal part
Divide 211 coverings.Two parts 211 are collectively forming the staged profile of RDL111 end.End section 1115 can have smooth
Top surface or standard rectangular surface comprising right angle.End section 211 can have the smooth top surface of on-right angle.For example, such as Fig. 1
（c）Shown and such as Fig. 1（d）Shown, end section 211 can have the top surface for including obtuse angle 203.One end section 211
Smooth contour can be mutually independent with the smooth contour of another end section 209.For example, such as Fig. 1（d）It is shown, end section 211
With the top surface for including obtuse angle 203, and end section 209 has curved surface.
Such as Fig. 1（a）To Fig. 1（d）The embodiment of shown packaging 100 has the RDL111 comprising end, RDL111
End there is the smooth top surface of on-right angle.Compared with RDL111 traditional top surface of the end comprising right angle, this RDL111
End smooth top surface have some advantageous characteristics so that the stress concentration at RDL111 can be reduced.On the other hand, improve
The reliability of packaging 100.
Such as Fig. 1（a）To Fig. 1（d）It is shown, another insulating barrier 113 is formed on the first insulating barrier 107, to cover RDL111
With crystal seed layer 109.Insulating barrier 113 has the opening that photoetching technique can be used to manufacture.Insulating barrier 113 can be by such as asphalt mixtures modified by epoxy resin
Fat, polyimides, benzocyclobutene（BCB）, polybenzoxazoles（PBO）Deng polymer formed, but other can also be used
Relatively soft material（It is typically organic）Dielectric material.Forming method includes spin coating or other common methods.Insulating barrier 113
Thickness can be between e.g., from about 5 μm and about 30 μm.
Insulating barrier 113, which has, sets under-bump metallization（UBM）The opening of pad 115.Soldered ball（It is not shown）It can place
On UBM pads 115.The UBM pads 115 made electrical contact with RDL111 can be formed.UBM pads 115 can include such as titanium layer
Or the conductive material layer of nickel dam.UBM pads 115 can include multiple sublayers（It is not shown）.By such as titanium（Ti）, titanium oxide
（TiOx）, tantalum（Ta）, tantalum nitride（TaN）, nickel（Ni）Or copper（Cu）Any multilayer for being made of material be suitable for UBM pads 115
Formation.Any suitable material or material layer that can be used for UBM pads 115 are entirely included in the scope of the present embodiment
It is interior.The technique or the establishment UBM pads 115 of CVD techniques can such as be sputtered according to desired materials'use, evaporated.Can be with shape
Thickness into UBM pads 115 is between about 0.01 μm to about 10 μm, such as about 5 μm.Alternatively, in certain embodiments, may be used
Not need UBM pads 115.
In addition, conductive bonding material（It is not shown）The top of UBM pads 115 can be deposited on.Welding material can be any
Metal or conductive material, such as Sn, lead（Pb）, Ni, Au, Ag, Cu, bismuthine（Bi）With their alloy or other conduction materials
The mixture of material.In certain embodiments, soldered ball may be mounted on UBM pads 115.
Fig. 2 can be passed through（a）To Fig. 2（e）Sectional view shown in technique manufacture Fig. 1（a）Shown embodiment.Can be with
Manufactured by similar technique（It is not shown）Other embodiment.
Such as Fig. 2（a）It is shown there is provided substrate 101, with the active device 102 in substrate 101 and positioned at substrate
Contact pad 105 on 101 surface.The passivation with the opening for exposing contact pad 105 is formed on the surface of the substrate 101
Layer 103.First insulating barrier 107 is formed in the top of passivation layer 103 and with the opening for exposing contact pad 105.The shape of crystal seed layer 109
Into contacting in the top of the first insulating barrier 107 and with the first insulating barrier 107, to cover the opening of the first insulating barrier 107 and with contacting
Pad 105 is contacted.Crystal seed layer 109 can be formed by conductive material, the conductive material be selected from substantially by Cu, Al, Ti, TiN,
The group that Ta, TaN, Cr, CrN, W, WN and combinations thereof are constituted.In addition, by the disposed thereon photoresist of crystal seed layer 109
Material, photoresist layer 301 is formed in the top of crystal seed layer 109.
Photoresist layer 301 is designed to change when exposed to light the polymer coating of property.It is then possible to selectivity
Ground goes the exposed area or non-exposed area of removing coating with the surface below exposure.Such as Fig. 2（b）It is shown, photoresist can be removed
The part of layer 301 is with the top of crystal seed layer 109 formation photoetching agent pattern 301.The material of photoresist layer 301 can include some light
It is sensitized compound（PAC）.PAC is the polymer of Special Category.PAC effect is to suppress Other substrate materials in a developer molten
Solution.PAC is typically the phenodiazine quinone for being not dissolved in typical developer.When photoresist layer 301 is exposed to light, mainly pass through photoresist
The PAC components of layer 301 absorb the light incided on photoresist layer 301, and chemical change occurs for the phenodiazine quinone molecule of PAC components.
The non-exposed area of photoresist is not influenceed substantially by developer.PAC can be uniformly distributed by photoresist, or can control
PAC processed to set up inclined edge on a photoresist.Photoetching agent pattern 301 can cover the two ends of crystal seed layer 109, to keep brilliant
The remainder for planting layer 109 is uncovered.Photoetching agent pattern 301 can include having such as Fig. 2（b）The table of shown acute angle 401
Face.Can be by changing PR（Photoresist）The luminous intensity of 301 surface forms acute angle 401.For example, close to acute angle
The intensity of the top light of point 403 in 401 corner can be higher than the intensity close to the top light of point 405 of the bottom of acute angle 401.With
The more low intensive light of the top of point 405 is compared, and the light of the higher-strength of the top of point 403 can remove a little 403 lower sections and be mixed with PAC
More PR materials.Therefore, acute angle 401 is formed.Can also be by changing and designing along the luminous intensity at the difference of curved surface
Form the other shapes of such as curve form.
Such as Fig. 2（c）Shown, conductive material can be deposited on crystal seed layer in the region for not being photo-etched the covering of glue pattern 301
Contact above in the of 109 and with crystal seed layer 109, to form RDL111.RDL111 covers the opening of passivation layer, and passes through crystal seed layer 109
It is electrically connected to contact pad 105.RDL111 can be formed by conductive material, and the conductive material is selected from basic by Ti, Al, Ni, vanadium
Change nickel（NiV）, the group that is constituted of Cu, Cu alloy and combinations thereof.
Such as Fig. 2（d）It is shown, photoetching agent pattern 301 can be removed.RDL111 has close to the end of photoetching agent pattern 301
209 and end 211.Because photoetching agent pattern has acute angle 401, so end 209 and end 211 have includes obtuse angle respectively
201 and the top surface at obtuse angle 203.However, it is possible to be similarly formed any other form of the smooth top surface of on-right angle（Not in Fig. 2
（a）To Fig. 2（e）In show）.
Such as Fig. 2（e）It is shown, after photoetching agent pattern 301 is removed, the second insulating barrier can be formed above RDL111
113.It can form opening to expose RDL111 in the second insulating barrier 113.In addition, UBM pads 115 can form exhausted second
Contact in the opening of edge layer 113 and with RDL111.
In another example, Fig. 3 can be passed through（a）To Fig. 3（h）Sectional view shown in technique manufacture Fig. 1（c）It is shown
Embodiment.Similar technique can be passed through（It is not shown）Manufacture other embodiment.
Such as Fig. 3（a）It is shown there is provided substrate 101, wherein with the active device 102 in substrate 101 and positioned at lining
Contact pad 105 on the surface at bottom 101.Formed on the surface of the substrate 101 with the blunt of the opening for exposing contact pad 105
Change layer 103.First insulating barrier 107 is formed in the top of passivation layer 103 and with the opening for exposing contact pad 105.Crystal seed layer 109
Formed in the top of the first insulating barrier 107 and contacted with the first insulating barrier 107, to cover the opening of the first insulating barrier 107 and with connecing
Pad 105 is touched to contact.In addition, by that in the disposed thereon Other substrate materials of crystal seed layer 109, can be formed in the top of crystal seed layer 109
Photoresist layer 301.
Such as Fig. 3（b）It is shown, the part of photoresist layer 301 can be removed to form the first photoresist in the top of crystal seed layer 109
Pattern 301.Remaining first photoetching agent pattern 301 can cover the two ends of crystal seed layer 109, to keep the residue of crystal seed layer 109
Part is uncovered.First photoetching agent pattern 301 can include such as Fig. 3（b）The rectangular surface of shown tool.Alternatively,
One photoetching agent pattern 301 can include the smooth surface of on-right angle.
Such as Fig. 3（c）It is shown, the second photoetching agent pattern 303 can be formed not by the first photoetching agent pattern 301 cover and by
The top of crystal seed layer 109 in the circular region of first photoetching agent pattern 301.Thin layer is generally used by spin coating（Such as 1 micron）
Other substrate materials cover the whole surface of crystal seed layer 109 to form the second photoetching agent pattern 303.If foring unnecessary photoetching
Glue pattern 303, then can be by by photoetching agent pattern 303（Usually UV）Exposed to through template or mask（It is designed to permit
Xu Guang only falls on desired locations）Light remove redundance.Light guide causes the chemical change in exposure area., can according to system
Optionally to wash exposure area or unexposed area.After the redundance of photoetching agent pattern 303 is removed, it is ensured that the
The surface of two photoetching agent patterns 303 is less than the surface of the first photoetching agent pattern 301.
Such as Fig. 3（d）Shown, the 3rd photoetching agent pattern 305 can be formed in the top of the second photoetching agent pattern 303 and is connected to
First photoetching agent pattern 301.Generally used and formed with the material identical material for the first photoetching agent pattern 301 by spin coating
3rd photoetching agent pattern 305, and the material for being used for the second photoetching agent pattern 303 can be different.Second photoetching agent pattern 303 be by
The sacrifice layer being completely removed.The material of second photoetching agent pattern 303 can be boron phosphorus silicate glass（BPSG）, phosphosilicate
Glass（PSG）, polysilicon, the silica of low-pressure chemical vapor deposition or some other Other substrate materials.For the second photoetching
The material of the sacrifice layer of glue pattern 303 also depends on the material for crystal seed layer 109.Such as Fig. 3（e）It is shown, second can be removed
Photoetching agent pattern 303 and keep the first photoetching agent pattern 301 and the 3rd photoetching agent pattern 305 excellent.3rd photoresist figure
The material of case 305 can include some light-sensitive compounds（PAC）.PAC is the polymer of Special Category and for solvent-borne type, and PAC
Luminous intensity is reduced from top to lower curtate.Such as Fig. 3（d）Shown, the 3rd photoetching agent pattern 305 can include the table with acute angle 401
Face.Acute angle 401 can be formed by the luminous intensity of the surface of the 3rd photoetching agent pattern 305 of change.For example, close to acute angle
The luminous intensity of the top of point 403 in 401 corner can be higher than the luminous intensity close to the top of point 405 of the bottom of acute angle 401.With point
The more low intensive light of 405 tops is compared, and the light of the higher-strength of the top of point 403 can remove what a little 403 lower sections were mixed with PAC
More PR materials.Therefore, acute angle 401 is formed.It can also be formed by changing and designing along the luminous intensity of the difference of curved surface
The other shapes of such as curved shape.
Such as Fig. 3（f）It is shown, RDL111 can be formed, to fill not by the first photoetching agent pattern 301 and the 3rd photoresist figure
The region that case 305 is covered.The conductive material for forming RDL111 can be selected from basic by Ti, Al, Ni, vanadium nickel（NiV）、Cu、Cu
The group that alloy and combinations thereof are constituted.RDL111 covers the opening of passivation layer, and is connected to Contact welding by crystal seed layer 109
Disk 105.The first photoetching agent pattern 301 and the 3rd photoetching agent pattern 305 can be removed after RDL111 is formed.
RDL111 can include two parts.RDL111 Part I filling not by positioned at the top of crystal seed layer 109 and with crystalline substance
The region for the first photoetching agent pattern 301 covering that layer 109 is contacted is planted, to cover the opening of passivation layer 103, and passes through crystal seed layer electricity
It is connected to contact pad 105.RDL111 Part II is located above RDL111 Part I, to fill not by the 3rd photoetching
The region that glue pattern 305 is covered, wherein, RDL Part II has the He of end 209 close to the 3rd photoetching agent pattern 305
211, and end 209 and 211 has the smooth surface of on-right angle.Such as Fig. 3（f）Shown, in embodiment, end 209 and 211 has
There is the surface comprising obtuse angle 201 and obtuse angle 203 respectively.It is alternatively possible to be similarly formed any of the smooth top surface of on-right angle
Other forms（Not in Fig. 3（a）To Fig. 3（h）In show）.
Such as Fig. 3（g）It is shown, it can be formed above the second insulating barrier 113 in RDL111.Can be in the second insulating barrier 113
Opening is formed to expose RDL111.Such as Fig. 3（h）It is shown, UBM pads 115 can be formed in the opening of the second insulating barrier 113 and
Contacted with RDL111.
However, Fig. 2（a）To Fig. 2（e）And Fig. 3（a）To Fig. 3（h）Show the side that can be used for the RDL111 described in shaping
The embodiment of method, the purpose of these embodiments is only that the method for showing to use, rather than is limited by embodiment
It is fixed.Of course, it is possible to optionally with any suitable method for shaping RDL111, such as form RDL111, then use
Such as etch process（Etch process described in such as inventor Lee U.S. Patent No. 6,440,865, it is all interior
Appearance is hereby expressly incorporated by reference）Shape RDL111.All such methods are entirely included in the range of embodiment.
Embodiments of the invention have multiple advantageous characteristics.The embodiment of packaging has RDL, and RDL end has
The smooth top surface of on-right angle so that can reduce the stress at RDL compared with having rectangular traditional top surface with RDL end
Concentrate.This improves the reliability of packaging.
Although the present invention and its advantages have been described in detail, it is to be understood that can be wanted without departing substantially from appended right
In the case of seeking restriction the spirit and scope of the invention, a variety of changes are made, replaces and changes.Moreover, the model of the application
Enclose and be not limited in technique described in this specification, machine, manufacture, material component, device, the particular implementation of method and steps
Example.It is existing or Future Development to be used to perform as it will be recognized by one of ordinary skill in the art that by embodiments of the invention
To the technique according to the essentially identical function of the corresponding embodiment of the present invention or the essentially identical result of acquisition, machine
Device, manufacture, material component, device, method or the step present invention can be used.Correspondingly, appended claims mean bag
In the range of including such as technique, machine, manufacture, material component, device, method or step.In addition, each claim is constituted
One independent embodiment, and different claim and embodiment combination within the scope of the present invention.
Claims (20)
1. a kind of packaging, including：
Contact pad, on the surface of substrate；
Dielectric layer, positioned at the surface of the substrate, with the opening for exposing the contact pad；And
Conductive layer, positioned at the dielectric layer, covers the opening of the dielectric layer, and is electrically connected to the contact pad, its
In, the conductive layer includes crystal seed layer and with the end opened comprising top surface and side wall and with the open space of the dielectric layer,
The side wall is extended with on-right angle away from the substrate, and the side wall is intersected with the top surface with on-right angle, with
It is layered in avoiding the dielectric layer caused by the stress concentration of the end.
2. packaging according to claim 1, wherein, the top surface of the end of the conductive layer has obtuse angle or curved surface.
3. packaging according to claim 1, wherein, the end of the conductive layer is stairstepping, and the conductive layer
The top surface of end there is obtuse angle or curved surface.
4. packaging according to claim 1, wherein, the conductive layer is conforma layer, and the conductive layer is located at described
The thickness of the part of dielectric layer is equal to the thickness that the conductive layer is located in the opening of the dielectric layer.
5. packaging according to claim 1, wherein, the conductive layer includes being selected from by Ti, Al, Ni, vanadium nickel
(NiV), the conductive material for the group that Cu, Cu alloy and combinations thereof are constituted.
6. packaging according to claim 1, wherein, the thickness of the dielectric layer is more than 5 μm.
7. packaging according to claim 1, wherein, the obtuse angle of the top surface of the end of the conductive layer between 91 ° extremely
In the range of 120 °.
8. packaging according to claim 7, further comprises：
Second insulating barrier, above the conductive layer, second insulating barrier has the opening for exposing the conductive layer；And
Under-bump metallization (UBM) pad, formed in the opening of second insulating barrier and with the conductive layers make contact.
9. a kind of method for forming packaging, including：
Substrate is provided, there is contact pad on the surface of the substrate；
Dielectric layer is formed on the surface of the substrate, the dielectric layer has the opening for exposing the contact pad；
In dielectric layer formation crystal seed layer, to cover the opening of the dielectric layer, cover the contact pad and with institute
State contact pad contact；
Photoresist layer is formed above the crystal seed layer, the photoresist layer, which has, includes light-sensitive compound (PAC) photoresist
Material；
The photoetching agent pattern at the two ends of the covering crystal seed layer is formed above the crystal seed layer；
The shape in the region for the photoetching agent pattern covering not contacted above the crystal seed layer and with the crystal seed layer
Into conductive layer, to cover the opening of the dielectric layer, and the contact pad is electrically connected to by the crystal seed layer, wherein, institute
Stating conductive layer has close to the end of the photoetching agent pattern, and the end of the conductive layer has the smooth top surface of on-right angle
For avoid the dielectric layer caused by the stress concentration of the end from being layered and with the open space of the dielectric layer
Open；And
Remove the photoetching agent pattern.
10. the method according to claim 9 for forming packaging, wherein：
The step of forming the photoetching agent pattern above the crystal seed layer has comprising described in the surface of acute angle including being formed
Photoetching agent pattern；And
The step of forming the conductive layer in the region not covered by the photoetching agent pattern is included close to the photoresist figure
The conductive layer of the case formation with the end, the end of the conductive layer has the top surface comprising obtuse angle.
11. the method according to claim 9 for forming packaging, wherein：
The step of forming the photoetching agent pattern above the crystal seed layer includes：
The first photoetching agent pattern is formed above the crystal seed layer；
The second photoetching agent pattern is formed above the crystal seed layer, and second photoetching agent pattern is by the first photoresist figure
Case is surround, wherein, the surface of second photoetching agent pattern is less than the surface of first photoetching agent pattern；
Formed and be connected to first photoetching agent pattern and the 3rd photoetching agent pattern above second photoetching agent pattern；
And
Second photoetching agent pattern is removed, while keeping first photoetching agent pattern and the 3rd photoetching agent pattern complete；And
And
The step of forming the conductive layer in the region not covered by the photoetching agent pattern includes：
The Part I of the conductive layer is formed, to fill what is do not contacted above the crystal seed layer and with the crystal seed layer
The region of the first photoetching agent pattern covering, covers the opening of the dielectric layer, and be electrically connected to institute by the crystal seed layer
State contact pad；And
The Part II of the conductive layer is formed above the Part I of the conductive layer, to fill not by the 3rd photoetching
The region of glue pattern covers, the Part II of the conductive layer has close to the end of the 3rd photoetching agent pattern, and described
End has the smooth top surface comprising on-right angle.
12. the method according to claim 9 for forming packaging, further comprises：
The first insulating barrier is formed between the dielectric layer and the crystal seed layer.
13. the method according to claim 9 for forming packaging, further comprises：
After the step of removing the photoetching agent pattern, the second insulating barrier is formed above the conductive layer；
The opening of second insulating barrier is formed, to expose the conductive layer；And
Formed positioned at second insulating barrier opening in and with under-bump metallization (UBM) pad of the conductive layers make contact.
14. the method according to claim 9 for forming packaging, wherein, in dielectric layer formation institute
The step of stating crystal seed layer includes：Using selected from including Cu, Ti, TiN, Ta, TaN, Cr, CrN, W, WN and combinations thereof institute group
Into group in conductive material form the crystal seed layer.
15. the method according to claim 9 for forming packaging, wherein, the step of forming the conductive layer is wrapped
Include：Use the conduction material in the group constituted including Ti, Al, Ni, vanadium nickel (NiV), Cu, Cu alloy and combinations thereof
Expect to form the conductive layer.
16. a kind of packaging, including：
Contact pad, on the surface of substrate；
Dielectric layer, positioned at the surface of the substrate, with the first opening for exposing the contact pad；
First insulating barrier, is contacted positioned at the dielectric layer and with the dielectric layer, fill it is described first opening part and
It is open to expose the contact pad with second；And
Conductive layer, above first insulating barrier, and the contact pad being electrically connected in second opening, it is described
Conductive layer includes crystal seed layer and with the first end opened comprising top surface and side wall and with second open space, the top surface
Angle between the side wall is more than 90 degree, and the side wall is extended with non-90 degree angle away from the substrate,
For avoiding the dielectric layer caused by the stress concentration at the first end from being layered.
17. packaging according to claim 16, wherein, the conductive layer has the second end comprising curved surface top surface
Portion.
18. packaging according to claim 16, further comprises：
Second insulating barrier, above the conductive layer, wherein, second insulating barrier, which has, exposes the 3rd of the conductive layer
Opening；And
Under-bump metallization (UBM) pad, formed second insulating barrier the 3rd opening in and with the conductive layers make contact.
19. packaging according to claim 16, wherein, the first end of the conductive layer is included positioned at described
The Part I of dielectric layer, the Part II above the Part I, and the end of the conductive layer is described
The top surface of Part II has obtuse angle or curved surface.
20. packaging according to claim 16, wherein, the conductive layer is conforma layer, and the conductive layer is located at institute
The thickness for stating the part above the first insulating barrier is equal to the thickness that the conductive layer is located in the described second opening.
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| US201361779663P | 2013-03-13 | 2013-03-13 | |
| US61/779,663 | 2013-03-13 | ||
| US13/900,754 | 2013-05-23 | ||
| US13/900,754 US9082870B2 (en) | 2013-03-13 | 2013-05-23 | Methods and apparatus of packaging semiconductor devices |
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| CN104051384B true CN104051384B (en) | 2017-09-29 |
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| US9484307B2 (en) * | 2015-01-26 | 2016-11-01 | Advanced Semiconductor Engineering, Inc. | Fan-out wafer level packaging structure |
| CN105938803A (en) * | 2016-06-24 | 2016-09-14 | 南通富士通微电子股份有限公司 | Rewiring technology |
| US10269672B2 (en) * | 2017-08-24 | 2019-04-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
| CN109671698A (en) * | 2018-11-23 | 2019-04-23 | 中国科学院微电子研究所 | Reroute layer structure and preparation method thereof |
| US20200176377A1 (en) * | 2018-11-30 | 2020-06-04 | Nanya Technology Corporation | Electronic device and method of manufacturing the same |
| CN112582276A (en) * | 2019-09-28 | 2021-03-30 | 台湾积体电路制造股份有限公司 | Semiconductor structure and manufacturing method thereof |
| CN113517200A (en) * | 2020-05-27 | 2021-10-19 | 台湾积体电路制造股份有限公司 | Semiconductor device and method of forming the same |
| CN116288226B (en) * | 2023-05-23 | 2023-08-18 | 江西兆驰半导体有限公司 | Electron beam evaporation metal film stress monitoring method |
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| JP5287644B2 (en) * | 2009-09-30 | 2013-09-11 | Ｔｄｋ株式会社 | Thin film capacitor |
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| US4840924A (en) * | 1984-07-11 | 1989-06-20 | Nec Corporation | Method of fabricating a multichip package |
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