CN104051216A - Plasma tuning rods in microwave processing systems - Google Patents

Plasma tuning rods in microwave processing systems Download PDF

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Publication number
CN104051216A
CN104051216A CN201410098636.4A CN201410098636A CN104051216A CN 104051216 A CN104051216 A CN 104051216A CN 201410098636 A CN201410098636 A CN 201410098636A CN 104051216 A CN104051216 A CN 104051216A
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China
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tuning
coupled
plasma
chamber
assembly
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CN201410098636.4A
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CN104051216B (en
Inventor
赵建平
岩俊彦
陈立
彼得·L·G·文泽克
梅里特·芬克
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority claimed from US13/834,690 external-priority patent/US9396955B2/en
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Abstract

The invention provides a plurality of plasma tuning rod subsystems. The plasma tuning rod subsystems can comprise one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.

Description

Plasma tuning plug in microwave resonator treatment system
The cross reference of related application
This application is the U.S. Patent application 13/249 that is entitled as " the plasma tuning plug in microwave resonator treatment system " of submitting on September 30th, 2011, the part of No. 485 (attorney TEA-071) continues, by reference the full content of No. 13/249,485, U.S. Patent application is herein incorporated.
Technical field
The present invention relates to substrate/processing of wafers, and relate more particularly to microwave processing system and method for the treatment of substrate and/or semiconductor wafer.
Background technology
Description of related art
Conventionally, during semiconductor processes, (dry method) plasma etch process for removing or etching material in glass-coated microwire or the via hole on being patterned in semiconductor chip or contact.Plasma etch process is usually directed to the semiconductor chip of the protective layer that covers patterning on having (for example photoresist layer) to be positioned in process chamber.
Once substrate is positioned in indoor, just with preassigned flow rate, ionogenic, dissociating gas mixture are incorporated into indoorly, make vacuum pump throttling to obtain environmental treatment pressure simultaneously.Thereafter, when a part for the gaseous species existing is followed while being ionized the collision with high energy electron after, formation plasma.And hot electron is used for the mist kind of some kind of dissociation, and produces the reactant species that is suitable for etch exposed face.Once formation plasma, just carrys out the exposure of etch substrate by plasma.This processing is regulated to obtain optimum condition, comprise suitable expected response substrate concentration and cluster ion, for example, with the various features in the exposed region of etch substrate (, groove, via hole, contact etc.).For example, need the substrate material of etching to comprise silicon dioxide (SiO 2), polysilicon and silicon nitride.
Traditionally, as mentioned above, various technology have been implemented for gas have been excited as the plasma for treatment substrate during manufacturing at semiconductor device.Especially, (" parallel-plate ") capacitance coupling plasma (CCP, capacitively coupled plasma) treatment system or inductively coupled plasma (ICP, inductively coupled plasma) treatment system has been widely used in plasma exciatiaon.Except the plasma source of other kinds, also have microwave plasma source (to comprise that those utilize electron cyclotron resonace (ECR, electron-cyclotron resonance) source), surface wave plasma (SWP, surface wave plasma) source and spiral plasma source.
Microwave processing system is better than CCP system, ICP system and resonant heating system and provides improved plasma treatment performance (particularly for etch processes) becoming common recognition.Microwave processing system is at relatively low Boltzmann electron temperature (Boltzmann electron temperature) (T e) generation highly ionized.In addition, EM(electromagnetism, electromagnetic) source is created in the more rich plasma of molecular species of electron excitation in the situation that molecular dissociation reduces conventionally.Yet the actual enforcement of microwave processing system still stands to comprise for example plasma stability and inhomogeneity several defect.
Summary of the invention
The present invention relates to microwave processing system, and relate in particular to the stable and/or uniform chamber assembly in microwave processing system.
According to embodiments of the invention, microwave processing system comprises: process chamber has the processing space for the treatment of substrate in process chamber; And the one or more chambeies assembly that is coupled to the side room wall of process chamber, in each chamber assembly, all there is electromagnetism (EM) energy tuning space.EM coupling regime group is based upon in EM energy tuning space, and barrier assembly group is coupled to side room wall and be configured to by an EM energy tuning space with process space isolation.Plasma tuning plug group is coupled to barrier assembly group, and plasma tuning plug group has to be disposed to be processed the plasma tuning part group in space and is disposed in EM energy tuning space and is coupled at least one the EM tuning part group in EM coupling regime group.Controller is coupled to one or more chambeies assembly, and its middle controller is configured to control the EM coupling regime group in EM energy tuning space, controls thus the plasma uniformity of processing in space.
Accompanying drawing explanation
Now will only with reference to schematic figures, describe embodiments of the invention by way of example, wherein corresponding Reference numeral represents corresponding part, and in the accompanying drawings:
Figure 1A-1C shows the different example view of the first microwave processing system according to an embodiment of the invention;
Fig. 2 A-2C shows the different example view of the second microwave processing system according to an embodiment of the invention;
Fig. 3 A-3C shows the different example view of the 3rd microwave processing system according to an embodiment of the invention;
Fig. 4 A-4C shows the different example view of the 4th microwave processing system according to an embodiment of the invention;
Fig. 5 A-5D shows the different views of exemplary plasma tuning plug according to an embodiment of the invention;
Fig. 6 A-6D shows the different views of other exemplary plasma tuning plugs according to an embodiment of the invention;
Fig. 7 A-7D shows the different views of exemplary plasma tuning plug according to an embodiment of the invention;
Fig. 8 shows according to an embodiment of the invention the flow chart for exemplary operation program;
Fig. 9 shows plasma process system according to an embodiment of the invention;
Figure 10 A-10B shows the different views of the optional embodiment of microwave processing system; And
Figure 11 A-11B shows the different views of another optional embodiment of microwave processing system.
Accompanying drawing is included into and forms a part for this specification, shows embodiments of the invention, and is used for explaining the present invention together with general description of the present invention given above and the detailed description that below provides.
Embodiment
In each embodiment, microwave processing system is disclosed.Yet, person of skill in the art will appreciate that, can in the situation that without one or more in detail or in the situation that other substitute and/or additional method, material or parts put into practice each embodiment.In other examples, be not shown specifically or describe material or operation to prevent the aspect of fuzzy each embodiment of the present invention.
Similarly, in order to describe, set forth concrete numeral, material and structure to thorough understanding of the present invention is provided.However, can put into practice the present invention without detail.In addition, understand that each embodiment shown in accompanying drawing is illustrative expression and not necessarily draws in proportion.
Run through the reference " embodiment " of this specification or " embodiment " or its variation and refer in conjunction with the described specific feature of this embodiment, structure, material or characteristic and be included at least one embodiment of the present invention, but do not represent that they are present in each embodiment.Therefore, the phrase such as " in one embodiment " or " in an embodiment " might not refer to identical embodiment of the present invention in the appearance that runs through the difference place of this specification.In addition, specific feature, structure, material or characteristic can combine in any suitable mode in one or more embodiments.
However, although should be appreciated that the invention character of having explained universal, being included in specification is also the feature that belongs to invention character.
With reference now to accompanying drawing,, wherein same Reference numeral is specified the same or corresponding part that runs through several views, and Figure 1A-1C shows the different views of the first microwave processing system according to an embodiment of the invention.The first microwave processing system 100 can be in plasma curtain depositing system (plasma curtain deposition system) or plasma enhanced deposition system.
Figure 1A shows the biopsy cavity marker devices top view of the process chamber 110 in the first microwave processing system 100.Top view shows first interface assembly 112a, the second interface module 112b and is coupled to first interface assembly 112a and the second interface module 112b and the x/y plan view of a plurality of additional locular wall 112 of formation processing chamber 110 thus.For example, locular wall 112 can have the wall thickness associated with it (t), and wall thickness (t) can change to about 5mm from about 1mm.First interface assembly 112a can have the first interface thickness (t associated with it i1), and first interface thickness (t i1) can change to about 10mm from about 1mm.The second interface module 112b can have the second interface thickness (t associated with it i2), and the second interface thickness (t i2) can change to about 10mm from about 1mm.Process space 115 and can there is the length (x associated with it t), and length (x t) can change to about 500mm from about 10mm.At this embodiment and below in all embodiment, be appreciated that provided size can be different from recorded size, for example, process space and can there is length or the radius that reaches several meters, and interface thickness and wall thickness can reach 30mm or more.
Top view shows the Section View of the first chamber assembly 168a therein with an EM energy tuning space 169a, and the first chamber assembly 168a can comprise the first chamber wall 165a, the second chamber wall 166a, at least one the 3rd chamber wall 167a and one or more additional chamber wall (not shown).For example, the first chamber assembly 168a can utilize the first chamber wall 165a to be coupled to first interface assembly 112a, and wall (165a, 166a and 167a) can comprise dielectric material and can have the wall thickness (t associated with it a), and wall thickness (t a) can change to about 5mm from about 1mm.In addition, an EM energy tuning space 169a can have the first length (x associated with it t1a) and the first width (y 1a), the first length (x t1a) can change to about 500mm from about 10mm, and the first width (y 1a) can change to about 50mm from about 5mm.
Top view also shows the Section View of the second chamber assembly 168b therein with the 2nd EM energy tuning space 169b, and the second chamber assembly 168b can comprise the first chamber wall 165b, the second chamber wall 166b, at least one the 3rd chamber wall 167b and one or more additional chamber wall (not shown).For example, the second chamber assembly 168b can utilize the first chamber wall 165b to be coupled to the second interface module 112b, and wall (165b, 166b and 167b) can comprise dielectric material and can have the wall thickness (t associated with it b), and wall thickness (t b) can change to about 5mm from about 1mm.In addition, the 2nd EM energy tuning space 169b can have the second length (x associated with it t1b) and the second width (y 1b), the second length (x t1b) can change to about 500mm from about 10mm, and the second width (y 1b) can change to about 50mm from about 5mm.At this embodiment and below in all embodiment, be appreciated that provided size can be different from recorded size, for example, chamber wall thickness can reach 30mm or more, and EM energy tuning space can have length and/or the width that reaches several meters.
In some example system, the first barrier assembly group (164a, 164b, 164c, 164d and 164e) can be coupled to first interface assembly 112a removably, and can be configured to isolation processing space 115 and an EM energy tuning space 169a.The first barrier assembly group (164a, 164b, 164c, 164d and 164e) can be for being coupled to first interface assembly 112a by the first plasma tuning plug group { (170a, 170b, 170c, 170d and 170e) and (175a, 175b, 175c, 175d and 175e) } removably.For example, the first plasma tuning part group (170a, 170b, 170c, 170d and 170e) can be configured in to be processed in space 115, and an EM tuning part group (175a, 175b, 175c, 175d and 175e) can be configured in an EM energy tuning space 169a.
The second barrier assembly group (164f, 164g, 164h, 164i and 164j) can be coupled to the second interface module 112b removably, and can be configured to isolation processing space 115 and the 2nd EM energy tuning space 169b.The second barrier assembly group (164f, 164g, 164h, 164i and 164j) can be for being coupled to the second interface module 112b by the second plasma tuning plug group { (170f, 170g, 170h, 170i and 170j) and (175f, 175g, 175h, 175i and 175j) } removably.For example, the second plasma tuning part group (170f, 170g, 170h, 170i and 170j) can be configured in to be processed in space 115, and the 2nd EM tuning part group (175f, 175g, 175h, 175i and 175j) can be configured in the 2nd EM energy tuning space 169b.
Still with reference to Figure 1A, the first plasma tuning plug (170a, 175a) can comprise dielectric material, can there is the first plasma tuning part 170a, the first plasma tuning part 170a can by the first plasma tuning apart from 171a, extend to process in space 115 arrive and utilize (x 2a) primary importance that limits.For example, the first plasma is tuning can change to about 400mm from about 10mm apart from 171a.At this embodiment and below in all embodiment, be appreciated that provided size can be different from recorded size, for example, distance can be 1 meter or longer, and no better than the full distance to processing the opposite side in space.
In the one EM energy tuning space 169a that can set up in the first chamber assembly 168a, an EM coupling regime 162a is based upon with the first chamber wall 165a at a distance of an EM coupling distance 176a place, and an EM tuning part 175a can extend in an EM coupling regime 162a.The one EM tuning part 175a can obtain the first microwave energy from an EM coupling regime 162a, and the first microwave energy can utilize the first plasma tuning part 170a and be sent to the primary importance (x that processes space 115 2a) locate.The one EM coupling regime 162a can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, an EM coupling distance 176a can change to about 10mm from about 0.01mm, and an EM coupling distance 176a can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).At this embodiment and below in all embodiment, be appreciated that provided size can be different from recorded size, for example, distance can reach 20mm or longer.
The first plasma tuning plates 161a can be coupled to the first control assembly 160a, and the first control assembly 160a can be tuning apart from 177a for the first plasma tuning plates 161a being moved to 163a the one EM with respect to an EM tuning part 175a of the first plasma tuning plug (170a, 175a) in an EM energy tuning space 169a.The first control assembly 160a and the first plasma tuning plates 161a can comprise dielectric material, and can be for being optimized be coupled to the microwave energy of an EM tuning part 175a of the first plasma tuning plug (170a, 175a) from an EM coupling regime 162a.Between an EM tuning part 175a that can be in an EM energy tuning space 169a and the first plasma tuning plates 161a, set up an EM tuning apart from 177a, and an EM is tuning apart from 177a, can change to about 1mm from about 0.01mm.At this embodiment and below in all embodiment, be appreciated that provided size can be different from recorded size, for example, distance can reach 20mm or longer.
The first plasma tuning plug (170a, 175a) can have the first diameter (d associated with it 1a), and the first diameter (d 1a) can change to about 1mm from about 0.01mm.The first plasma tuning plates 161a can have the first diameter (D associated with it 1a), and the first diameter (D 1a) can change to about 10mm from about 1mm.The one EM coupling regime 162a, the first control assembly 160a can have an x/y planar offset (x associated with it with the first plasma tuning plates 161a 1a), and an x/y planar offset (x 1a) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).For example, the first control assembly 160a can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1a).At this embodiment and below in all embodiment, be appreciated that plasma tuning plug and plate can have and reach 80mm or larger diameter, and control assembly diameter can reach 10mm or larger.
The second plasma tuning plug (170b, 175b) can comprise dielectric material, and can there is the second plasma tuning part 170b, the second plasma tuning part 170b can extend in space 115 that the second plasma is tuning to be arrived and utilize (x apart from 171b to processing 1b) second place that limits.For example, the second plasma is tuning can change to about 400mm from about 10mm apart from 171b.
In the one EM energy tuning space 169a that can set up in the first chamber assembly 168a, the 2nd EM coupling regime 162b is based upon with the first chamber wall 165a at a distance of the 2nd EM coupling distance 176b place, and the 2nd EM tuning part 175b can extend in the 2nd EM coupling regime 162b.The 2nd EM tuning part 175b can obtain the second microwave energy from the 2nd EM coupling regime 162b, and the second microwave energy can utilize the second plasma tuning part 170b and be sent to the second place (x that processes space 115 1b) locate.The 2nd EM coupling regime 162b can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 2nd EM coupling distance 176b can change to about 10mm from about 0.01mm, and the 2nd EM coupling distance 176b can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The second plasma tuning plates 161b can be coupled to the second control assembly 160b can be tuning apart from 177b for the second plasma tuning plates 161b being moved to 163b the 2nd EM with respect to the 2nd EM tuning part 175b of the second plasma tuning plug (170b, 175b) in an EM energy tuning space 169a.The second control assembly 160b and the second plasma tuning plates 161b can be for being optimized be coupled to the microwave energy of the 2nd EM tuning part 175b of the second plasma tuning plug (170b, 175b) from the 2nd EM coupling regime 162b.For example, between the 2nd EM tuning part 175b that can be in an EM energy tuning space 169a and the second plasma tuning plates 161b, set up the 2nd EM tuning apart from 177b, and the 2nd EM is tuning apart from 177b, can change to about 1mm from about 0.01mm.
The second plasma tuning plug (170b, 175b) can have the Second bobbin diameter (d associated with it 1b), and Second bobbin diameter (d 1b) can change to about 1mm from about 0.01mm.The second plasma tuning plates 161b can comprise dielectric material, and can have the Second bobbin diameter (D associated with it 1b), Second bobbin diameter (D 1b) can change to about 10mm from about 1mm.The 2nd EM coupling regime 162b, the second control assembly 160b can have the two x/y planar offset (x associated with it with the second plasma tuning plates 161b 1b), and the 2nd x/y planar offset (x 1b) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).For example, the second control assembly 160b can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1b).
C grade gas ions tuning plug (170c, 175c) can comprise dielectric material, and can there is C grade gas ions tuning part 170c, C grade gas ions tuning part 170c can extend in space 115 that C grade gas ions is tuning to be arrived and utilize (x apart from 171c to processing 2c) the 3rd position that limits.For example, C grade gas ions is tuning can change to about 400mm from about 10mm apart from 171c.
In the one EM energy tuning space 169a that can set up in the first chamber assembly 168a, the 3rd EM coupling regime 162c is based upon with the first chamber wall 165a at a distance of the 3rd EM coupling distance 176c place, and the 3rd EM tuning part 175c can extend in the 3rd EM coupling regime 162c.The 3rd EM tuning part 175c can obtain the 3rd microwave energy from the 3rd EM coupling regime 162c, and the 3rd microwave energy can utilize C grade gas ions tuning part 170c and be sent to the 3rd position (x that processes space 115 2c) locate.The 3rd EM coupling regime 162c can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 3rd EM coupling distance 176c can change to about 10mm from about 0.01mm, and the 3rd EM coupling distance 176c relies on wavelength, and can change to approximately (10 λ) from approximately (λ/4).
C grade gas ions tuning plates 161c can be coupled to the 3rd control assembly 160c, and can be tuning apart from 177c for C grade gas ions tuning plates 161c being moved to 163c the 3rd EM with respect to the 3rd EM tuning part 175c of C grade gas ions tuning plug (170c, 175c) in an EM energy tuning space 169a.The 3rd control assembly 160c and C grade gas ions tuning plates 161c can be for being optimized be coupled to the microwave energy of the 3rd EM tuning part 175c of C grade gas ions tuning plug (170c, 175c) from the 3rd EM coupling regime 162c.For example, between the 3rd EM tuning part 175c that can be in an EM energy tuning space 169a and C grade gas ions tuning plates 161c, set up the 3rd EM tuning apart from 177c, and the 3rd EM is tuning apart from 177c, can change to about 1mm from about 0.01mm.
C grade gas ions tuning plug (170c, 175c) can have the three diameter (d associated with it 1c), the 3rd diameter (d 1c) can change to about 1mm from about 0.01mm.C grade gas ions tuning plates 161c can comprise dielectric material, and can have the three diameter (D associated with it 1c), the 3rd diameter (D 1c) can change to about 10mm from about 1mm.The 3rd EM coupling regime 162c, the 3rd control assembly 160c can have the three x/y planar offset (x associated with it with C grade gas ions tuning plates 161c 1c), and the 3rd x/y planar offset (x 1c) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 3rd control assembly 160c can comprise dielectric material, and can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1c).
Fourth class gas ions tuning plug (170d, 175d) can comprise dielectric material, and can there is fourth class gas ions tuning part 170d, fourth class gas ions tuning part 170d can extend in space 115 that fourth class gas ions is tuning to be arrived and utilize (x apart from 171d to processing 2d) the 4th position that limits.For example, fourth class gas ions is tuning can change to about 400mm from about 10mm apart from 171d.
In the one EM energy tuning space 169a that can set up in the first chamber assembly 168a, the 4th EM coupling regime 162d is based upon with the first chamber wall 165a at a distance of the 4th EM coupling distance 176d place, and the 4th EM tuning part 175d can extend in the 4th EM coupling regime 162d.The 4th EM tuning part 175d can obtain the 4th microwave energy from the 4th EM coupling regime 162d, and the 4th microwave energy can utilize fourth class gas ions tuning part 170d and be sent to the 4th position (x that processes space 115 2d) locate.The 4th EM coupling regime 162d can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 4th EM coupling distance 176d can change to about 10mm from about 0.01mm, and the 4th EM coupling distance 176d can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
Fourth class gas ions tuning plates 161d can be coupled to the 4th control assembly 160d, and can be tuning apart from 177d for fourth class gas ions tuning plates 161d being moved to 163d the 4th EM with respect to the 4th EM tuning part 175d of fourth class gas ions tuning plug (170d, 175d) in an EM energy tuning space 169a.The 4th control assembly 160d and fourth class gas ions tuning plates 161d can be for being optimized be coupled to the microwave energy of the 4th EM tuning part 175d of fourth class gas ions tuning plug (170d, 175d) from the 4th EM coupling regime 162d.For example, between the 4th EM tuning part 175d that can be in an EM energy tuning space 169a and fourth class gas ions tuning plates 161d, set up the 4th EM tuning apart from 177d, and the 4th EM is tuning apart from 177d, can change to about 1mm from about 0.01mm.
Fourth class gas ions tuning plug (170d, 175d) can have the four diameter (d associated with it 1d), the 4th diameter (d 1d) can change to about 1mm from about 0.01mm.Fourth class gas ions tuning plates 161d can have the four diameter (D associated with it 1d), the 4th diameter (D 1d) can change to about 10mm from about 1mm.The 4th EM coupling regime 162d, the 4th control assembly 160d can have the four x/y planar offset (x associated with it with fourth class gas ions tuning plates 161d 1d), and the 4th x/y planar offset (x 1d) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 4th control assembly 160d can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1d).
The 5th plasma tuning plug (170e, 175e) can comprise dielectric material, and can there is the 5th plasma tuning part 170e, the 5th plasma tuning part 170e can extend in space 115 that the 5th plasma is tuning to be arrived and utilize (x apart from 171e to processing 2e) the 5th position that limits.For example, the 5th plasma is tuning can change to about 400mm from about 10mm apart from 171e.
In the one EM energy tuning space 169a that can set up in the first chamber assembly 168a, the 5th EM coupling regime 162e is based upon with the first chamber wall 165a at a distance of the 5th EM coupling distance 176e place, and the 5th EM tuning part 175e can extend in the 5th EM coupling regime 162e.The 5th EM tuning part 175e can obtain the 5th microwave energy from the 5th EM coupling regime 162e, and the 5th microwave energy can utilize the 5th plasma tuning part 170e and be sent to the 5th position (x that processes space 115 2e) locate.The 5th EM coupling regime 162e can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 5th EM coupling distance 176e can change to about 10mm from about 0.01mm, and the 5th EM coupling distance 176e can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 5th plasma tuning plates 161e can comprise dielectric material, and can be coupled to the 5th control assembly 160e, and can be tuning apart from 177e for the 5th plasma tuning plates 161e being moved to 163e the 5th EM with respect to the 5th EM tuning part 175e of the 5th plasma tuning plug (170e, 175e) in an EM energy tuning space 169a.The 5th control assembly 160e and the 5th plasma tuning plates 161e can be for being optimized be coupled to the microwave energy of the 5th EM tuning part 175e of the 5th plasma tuning plug (170e, 175e) from the 5th EM coupling regime 162e.For example, between the 5th EM tuning part 175e that can be in an EM energy tuning space 169a and the 5th plasma tuning plates 161e, set up the 5th EM tuning apart from 177e, and the 5th EM is tuning apart from 177e, can change to about 1mm from about 0.01mm.
The 5th plasma tuning plug (170e, 175e) can have the five diameter (d associated with it 1e), the 5th diameter (d 1e) can change to about 1mm from about 0.01mm.The 5th plasma tuning plates 161e can have the five diameter (D associated with it 1e), the 5th diameter (D 1e) can change to about 10mm from about 1mm.The 5th EM coupling regime 162e, the 5th control assembly 160e can have the five x/y planar offset (x associated with it with the 5th plasma tuning plates 161e 1e), and the 5th x/y planar offset (x 1e) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 5th control assembly 160e can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1e).
Still with reference to Figure 1A, the 6th plasma tuning plug (170f, 175f) can comprise dielectric material, and can there is the 6th plasma tuning part 170f, the 6th plasma tuning part 170f can extend in space 115 that the 6th plasma is tuning to be arrived and utilize (x apart from 171f to processing 2f) the 6th position that limits.The 6th plasma is tuning can change to about 400mm from about 10mm apart from 171f.
The 6th EM coupling regime 162f can comprise dielectric material, and in the 2nd EM energy tuning space 169b that can set up in the second chamber assembly 168b, the 6th EM coupling regime 162f is based upon with the first chamber wall 165b at a distance of the 6th EM coupling distance 176f place, and the 6th EM tuning part 175f can extend in the 6th EM coupling regime 162f.The 6th EM tuning part 175f can obtain the 6th microwave energy from the 6th EM coupling regime 162f, and the 6th microwave energy can utilize the 6th plasma tuning part 170f and be sent to the 6th position (x that processes space 115 2f) locate.The 6th EM coupling regime 162f can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.The 6th EM coupling distance 176f can change to about 10mm from about 0.01mm, or can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 6th plasma tuning plates 161f can comprise dielectric material, and can be coupled to the 6th control assembly 160f, and can be tuning apart from 177f for the 6th plasma tuning plates 161f being moved to 163f the 6th EM with respect to the 6th EM tuning part 175f of the 6th plasma tuning plug (170f, 175f) in the 2nd EM energy tuning space 169b.The 6th control assembly 160f and the 6th plasma tuning plates 161f can be for being optimized be coupled to the microwave energy of the 6th EM tuning part 175f of the 6th plasma tuning plug (170f, 175f) from the 6th EM coupling regime 162f.For example, between the 6th EM tuning part 175f that can be in the 2nd EM energy tuning space 169b and the 6th plasma tuning plates 161f, set up the 6th EM tuning apart from 177f, and the 6th EM is tuning apart from 177f, can change to about 1mm from about 0.01mm.
The 6th plasma tuning plug (170f, 175f) can have the six diameter (d associated with it 1f), the 6th diameter (d 1f) can change to about 1mm from about 0.01mm.The 6th plasma tuning plates 161f can have the six diameter (D associated with it 1f), the 6th diameter (D 1f) can change to about 10mm from about 1mm.The 6th EM coupling regime 162f, the 6th control assembly 160f can have the six x/y planar offset (x associated with it with the 6th plasma tuning plates 161f 1f), and the 6th x/y planar offset (x 1f) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 6th control assembly 160f can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1f).
The 7th plasma tuning plug (170g, 175g) can comprise dielectric material, and can there is the 7th plasma tuning part 170g, the 7th plasma tuning part 170g can extend in space 115 that the 7th plasma is tuning to be arrived and utilize (x2 apart from 171g to processing g) the 7th position that limits.The 7th plasma is tuning can change to about 400mm from about 10mm apart from 171g.
In the 2nd EM energy tuning space 169b that can set up in the second chamber assembly 168b, the 7th EM coupling regime 162g is based upon with the first chamber wall 165b at a distance of the 7th EM coupling distance 176g place, and the 7th EM tuning part 175g can extend in the 7th EM coupling regime 162g.The 7th EM tuning part 175g can obtain the 7th microwave energy from the 7th EM coupling regime 162g, and the 7th microwave energy can utilize the 7th plasma tuning part 170g and be sent to the 7th position (x that processes space 115 2g) locate.The 7th EM coupling regime 162g can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 7th EM coupling distance 176g can change to about 10mm from about 0.01mm, and the 7th EM coupling distance 176g can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 7th plasma tuning plates 161g can comprise dielectric material, and can be coupled to the 7th control assembly 160g, and can be tuning apart from 177g for the 7th plasma tuning plates 161g being moved to 163g the 7th EM with respect to the 7th EM tuning part 175g of the 7th plasma tuning plug (170g, 175g) in the 2nd EM energy tuning space 169b.The 7th control assembly 160g and the 7th plasma tuning plates 161g can be for being optimized be coupled to the microwave energy of the 7th EM tuning part 175g of the 7th plasma tuning plug (170g, 175g) from the 7th EM coupling regime 162g.For example, between the 7th EM tuning part 175g that can be in the 2nd EM energy tuning space 169b and the 7th plasma tuning plates 161g, set up the 7th EM tuning apart from 177g, and the 7th EM is tuning apart from 177g, can change to about 1mm from about 0.01mm.
The 7th plasma tuning plug (170g, 175g) can have the seven diameter (d associated with it 1g), the 7th diameter (d 1g) can change to about 1mm from about 0.01mm.The 7th plasma tuning plates 161g can have the seven diameter (D associated with it 1g), the 7th diameter (D 1g) can change to about 10mm from about 1mm.The 7th EM coupling regime 162g, the 7th control assembly 160g can have the seven x/y planar offset (x associated with it with the 7th plasma tuning plates 161g 1g), and the 7th x/y planar offset (x 1g) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 7th control assembly 160g can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1g).
The 8th plasma tuning plug (170h, 175h) can comprise dielectric material, and can there is the 8th plasma tuning part 170h, the 8th plasma tuning part 170h can extend in space 115 that the 8th plasma is tuning to be arrived and utilize (x apart from 171h to processing 2h) 8 positions that limits.The 8th plasma is tuning can change to about 400mm from about 10mm apart from 171h.
In the 2nd EM energy tuning space 169b that can set up in the second chamber assembly 168b, the 8th EM coupling regime 162h is based upon with the first chamber wall 165b at a distance of the 8th EM coupling distance 176h place, and the 8th EM tuning part 175h can extend in the 8th EM coupling regime 162h.The 8th EM tuning part 175h can obtain the 8th microwave energy from the 8th EM coupling regime 162h, and the 8th microwave energy can utilize the 8th plasma tuning part 170h and be sent to the 8 positions (x that processes space 115 2h) locate.The 8th EM coupling regime 162h can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 8th EM coupling distance 176h can change to about 10mm from about 0.01mm, and the 8th EM coupling distance 176h can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 8th plasma tuning plates 161h can comprise dielectric material, and can be coupled to the 8th control assembly 160h, and can be tuning apart from 177h for the 8th plasma tuning plates 161h being moved to 163h the 8th EM with respect to the 8th EM tuning part 175h of the 8th plasma tuning plug (170h, 175h) in the 2nd EM energy tuning space 169b.The 8th control assembly 160h and the 8th plasma tuning plates 161h can be for being optimized be coupled to the microwave energy of the 8th EM tuning part 175h of the 8th plasma tuning plug (170h, 175h) from the 8th EM coupling regime 162h.Between the 8th EM tuning part 175h that can be in the 2nd EM energy tuning space 169b and the 8th plasma tuning plates 161h, set up the 8th EM tuning apart from 177h, and the 8th EM is tuning apart from 177h, can change to about 1mm from about 0.01mm.
The 8th plasma tuning plug (170h, 175h) can have the eight diameter (d associated with it 1h), the 8th diameter (d 1h) can change to about 1mm from about 0.01mm.The 8th plasma tuning plates 161h can have the eight diameter (D associated with it 1h), the 8th diameter (D 1h) can change to about 10mm from about 1mm.The 8th EM coupling regime 162h, the 8th control assembly 160h can have the eight x/y planar offset (x associated with it with the 8th plasma tuning plates 161h 1h), and the 8th x/y planar offset (x 1h) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 8th control assembly 160h can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1h).
The 9th plasma tuning plug (170i, 175i) can comprise dielectric material, and can there is the 9th plasma tuning part 170i, the 9th plasma tuning part 170i can extend in space 115 that the 9th plasma is tuning to be arrived and utilize (x apart from 171i to processing 2i) the 9th position that limits.The 9th plasma is tuning can change to about 400mm from about 10mm apart from 171i.
In the 2nd EM energy tuning space 169b that can set up in the second chamber assembly 168b, the 9th EM coupling regime 162i is based upon with the first chamber wall 165b at a distance of the 9th EM coupling distance 176i place, and the 9th EM tuning part 175i can extend in the 9th EM coupling regime 162i.The 9th EM tuning part 175i can obtain the 9th microwave energy from the 9th EM coupling regime 162i, and the 9th microwave energy can utilize the 9th plasma tuning part 170i and be sent to the 9th position (x that processes space 115 2i) locate.The 9th EM coupling regime 162i can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 9th EM coupling distance 176i can change to about 10mm from about 0.01mm, and the 9th EM coupling distance 176i can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 9th plasma tuning plates 161i can comprise dielectric material, and can be coupled to the 9th control assembly 160i, and can be tuning apart from 177i for the 9th plasma tuning plates 161i being moved to 163i the 9th EM with respect to the 9th EM tuning part 175i of the 9th plasma tuning plug (170i, 175i) in the 2nd EM energy tuning space 169b.The 9th control assembly 160i and the 9th plasma tuning plates 161i can be for being optimized be coupled to the microwave energy of the 9th EM tuning part 175i of the 9th plasma tuning plug (170i, 175i) from the 9th EM coupling regime 162i.For example, between the 9th EM tuning part 175i that can be in the 2nd EM energy tuning space 169b and the 9th plasma tuning plates 161i, set up the 9th EM tuning apart from 177i, and the 9th EM is tuning apart from 177i, can change to about 1mm from about 0.01mm.
The 9th plasma tuning plug (170i, 175i) can have the nine diameter (d associated with it 1i), the 9th diameter (d 1i) can change to about 1mm from about 0.01mm.The 9th plasma tuning plates 161i can have the nine diameter (D associated with it 1i), the 9th diameter (D 1i) can change to about 10mm from about 1mm.The 9th EM coupling regime 162i, the 9th control assembly 160i can have the nine x/y planar offset (x associated with it with the 9th plasma tuning plates 161i 1i), and the 9th x/y planar offset (x 1i) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 9th control assembly 160i can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1i).
The tenth plasma tuning plug (170j, 175j) can comprise dielectric material, and can there is the tenth plasma tuning part 170j, the tenth plasma tuning part 170j can extend in space 115 that the tenth plasma is tuning to be arrived and utilize (x2 apart from 171j to processing j) X position that limits.For example, the tenth plasma is tuning can change to about 400mm from about 10mm apart from 171j.
In the 2nd EM energy tuning space 169b that can set up in the second chamber assembly 168b, the tenth EM coupling regime 162j is based upon with the first chamber wall 165b at a distance of the tenth EM coupling distance 176j place, and the tenth EM tuning part 175j can extend in the tenth EM coupling regime 162j.The tenth EM tuning part 175j can obtain the tenth microwave energy from the tenth EM coupling regime 162j, and the tenth microwave energy can utilize the tenth plasma tuning part 170j and be sent to the X position (x that processes space 115 2j) locate.The tenth EM coupling regime 162j can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the tenth EM coupling distance 176j can change to about 10mm from about 0.01mm, and the tenth EM coupling distance 176j can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The tenth plasma tuning plates 161j can comprise dielectric material, can be coupled to the tenth control assembly 160j, and can be tuning apart from 177j for the tenth plasma tuning plates 161j being moved to 163j the tenth EM with respect to the tenth EM tuning part 175j of the tenth plasma tuning plug (170j, 175j) in the 2nd EM energy tuning space 169b.The tenth control assembly 160j and the tenth plasma tuning plates 161j can be for being optimized be coupled to the microwave energy of the tenth EM tuning part 175j of the tenth plasma tuning plug (170j, 175j) from the tenth EM coupling regime 162j.For example, between the tenth EM tuning part 175j that can be in the 2nd EM energy tuning space 169b and the tenth plasma tuning plates 161j, set up the tenth EM tuning apart from 177j, and the tenth EM is tuning apart from 177j, can change to about 1mm from about 0.01mm.
The tenth plasma tuning plug (170j, 175j) can have the ten diameter (d associated with it 1j), the tenth diameter (d 1j) can change to about 1mm from about 0.01mm.The tenth plasma tuning plates 161j can have the ten diameter (D associated with it 1j), the tenth diameter (D 1j) can change to about 10mm from about 1mm.The tenth EM coupling regime 162j, the tenth control assembly 160j can have the ten x/y planar offset (x associated with it with the tenth plasma tuning plates 161j 1j), and the tenth x/y planar offset (x 1j) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The tenth control assembly 160j can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1j).
The top view of the first microwave processing system 100 comprises the top view of the first chamber control assembly 145a, and the top view of the first chamber control assembly 145a is shown as the top view that is coupled to the first chamber tuning plates 146a.The first chamber control assembly 145a can comprise dielectric material, and can have the first diameter (d associated with it 1aa), and the first diameter (d 1aa) can change to about 1mm from about 0.01mm.The first chamber tuning plates 146a can comprise dielectric material, and can have the Second bobbin diameter (D associated with it 1aa), and Second bobbin diameter (D 1aa) can change to about 10mm from about 1mm.That the first chamber control assembly 145a and the first chamber tuning plates 146a can have is associated with it, can change to from about 1mm an x/y planar offset (y of about 10mm 1aa).At this embodiment and below in all embodiment, be appreciated that the size providing can be different from recorded size, for example, the diameter of chamber control assembly and chamber tuning plates can reach respectively 10mm or larger and reach 80mm or larger.
In addition, the top view of the first microwave processing system 100 comprises the top view of the second chamber control assembly 145b, and the top view of the second chamber control assembly 145b is shown as the top view that is coupled to the second chamber tuning plates 146b.The second chamber control assembly 145b can comprise dielectric material, and can have the first additional diameter (d associated with it 1ba), and the first additional diameter (d 1ba) can change to about 1mm from about 0.01mm.The second chamber tuning plates 146b can have the second additional diameter (D associated with it 1ba), and the second additional diameter (D 1ba) can change to about 10mm from about 1mm.The second chamber control assembly 145b and the second chamber tuning plates 146b can comprise dielectric material, and can have the two x/y planar offset (y associated with it 1ba), and the 2nd x/y planar offset (y 1ba) can change to about 10mm from about 1mm.
Figure 1B shows the biopsy cavity marker devices front view of the process chamber 110 in the first microwave processing system 100.Front view shows each other the x/z plan view of a plurality of additional wall 112 of be coupled (the biopsy cavity marker devices front view that generates thus the processing space 115 in process chamber 110).The first microwave processing system 100 can be configured to form plasma in processing space 115.
Front view shows the Section View of the first chamber assembly 168a therein with an EM energy tuning space 169a, and the first chamber assembly 168a can comprise the first chamber wall 165a, the second chamber wall 166a, at least one the 3rd chamber wall 167a and one or more additional chamber wall (not shown).For example, the first chamber assembly 168a can utilize the first chamber wall 165a to be coupled to first interface assembly 112a.Front view also shows the Section View of the second chamber assembly 168b therein with the 2nd EM energy tuning space 169b, and the second chamber assembly 168b can comprise the first chamber wall 165b, the second chamber wall 166b, at least one the 3rd chamber wall 167b and one or more additional chamber wall (not shown).For example, the second chamber assembly 168b can utilize the first chamber wall 165b to be coupled to the second interface module 112b.
The partial elevation view (dashed-line view) of the first plasma tuning plug group (170a-170e) has been shown, the partial elevation view (dotted line view) of the partial elevation view (dashed-line view) of the first plasma tuning plates group (161a-161e), the second plasma tuning plug group (170f-170j) and the partial elevation view (dotted line view) of the second plasma tuning plates group (161f-161j) in Figure 1B.
The first plasma tuning plug group (170a-170e) can have an x/y planar offset group (x associated with it with the first plasma tuning plates group (161a-161e) 2a-e), and an x/y planar offset group (x 2a-e) can change to about 100mm from about 10mm.The first plasma tuning plug group (170a-170e) can have an x/z planar offset group (z associated with it with the first plasma tuning plates group (161a-161e) 1a-e), and an x/z planar offset group (z 1a-e) can change to about 400mm from about 100mm.
The second plasma tuning plug group (170f-170j) can have the two x/y planar offset group (x associated with it with the second plasma tuning plates group (161f-161j) 2f-j), and the 2nd x/y planar offset group (x 2f-j) can change to about 100mm from about 10mm.The second plasma tuning plug group (170f-170j) can have the two x/z planar offset group (z associated with it with the second plasma tuning plates group (161f-161j) 1f-j), and the 2nd x/z planar offset group (z 1f-j) can change to about 400mm from about 100mm.
Figure 1B shows the first microwave processing system 100 and can comprise and be coupled to locular wall 112 to obtain one or more plasma sensors 106 of the first plasma data.In addition, the first microwave processing system 100 can be configured to process the substrate of 200mm, the substrate of 300mm or larger sized substrate.In addition, can be configured separately with chamber rectangle columniform, square, so that the first microwave processing system 100 can be configured to substrate, wafer or the LCD of circular, square or rectangle process and no matter their size what kind of is, as skilled in the art will appreciate.Therefore,, although will describe each aspect of the present invention in conjunction with the processing of semiconductor chip, the present invention is not limited only to this.
As shown in Figure 1B, an EM source 150a can be coupled to the first chamber assembly 168a, and the 2nd EM source 150b can be coupled to the second chamber assembly 168b.The one EM source 150a can be coupled to the first matching network 152a, and the first matching network 152a can be coupled to the first coupling network 154a.The 2nd EM source 150b can be coupled to the second matching network 152b, and the second matching network 152b can be coupled to the second coupling network 154b.Alternatively, can use a plurality of matching network (not shown) or a plurality of coupling network (not shown).
The first coupling network 154a can be coupled to the first chamber assembly 168a removably, and the first chamber assembly 168a can be coupled to the top of the first interface assembly 112a of process chamber 110 removably.The first coupling network 154a can provide microwave energy for the EM energy tuning space 169a in the first chamber assembly 168a.The second coupling network 154b can be coupled to the second chamber assembly 168b removably, and the second chamber assembly 168b can be coupled to the top of the second interface module 112b of process chamber 110 removably.The second coupling network 154b can provide extra microwave energy for the 2nd EM energy tuning space 169b in the second chamber assembly 168b.Alternatively, can use other EM coupled structures.
As shown in Figure 1B, controller 195 can be coupled 196 to EM sources (150a, 150b), matching network (152a, 152b), coupling network (154a, 154b) and chamber assembly (168a, 168b), and controller 195 can utilize technical recipe to set up, control and optimize EM source (150a, 150b), matching network (152a, 152b), coupling network (154a, 154b) and chamber assembly (168a, 168b), to control the plasma uniformity of processing in space 115.For example, EM source (150a, 150b) can be in the frequency work from about 500MHz to about 5000MHz.In addition, controller 195 can be coupled 196 to plasma sensor 106 and processes sensor 107, and controller 195 can utilize technical recipe to set up, control and optimize the data from plasma sensor 106 and processes sensor 107, to control the plasma uniformity of processing in space 115.
In addition, controller 195 can be coupled 196 to gas supply system 140, is coupled to gas supply sub-component 141 and is coupled to gas tip 143.For example, gas supply system 140, gas supply sub-component 141 and gas tip 143 can be configured to that one or more are processed to gas and cause processing space 115, and can comprise flow control and/or flow measurement device.
During dry plasma etch, process gas and can comprise etchant, passivator or inert gas or the wherein combination of two or more.For example,, when plasma etching is such as silica (SiO x) or silicon nitride (Si xn y) dielectric film time, plasma etching gas composition generally includes such as C 4f 8, C 5f 8, C 3f 6, C 4f 6, CF 4deng at least one the fluorine-based chemical composition (C of carbon xf y), and/or can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z), and can there is inert gas, oxygen, CO or CO 2in at least one.In addition, for example, when etching polysilicon (polycrystalline silicon, polysilicon), plasma etching gas composition generally includes such as HBr, Cl 2, NF 3, or SF 6, or the halogen-containing gas of the combination of two or more wherein, and can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z) and inert gas, oxygen, CO or CO 2in at least one or wherein two or more.During plasma enhanced deposition, process gas and can comprise into film precursor (film forming precursor), reducibility gas or inert gas or the wherein combination of two or more.
As shown in Figure 1B, the first microwave processing system 100 can comprise control pressurer system 190 and be coupled to the port one 91 of process chamber 110, and is configured to emptying process chamber 110, and controls the pressure in process chamber 110.In addition, the first microwave processing system 100 can comprise the substrate holder 120 of processing space 115 for substrate 105 is arranged on.
The front view of the first microwave processing system 100 comprises the partial elevation view of the first chamber control assembly 145a, and the partial elevation view of the first chamber control assembly 145a is shown as the front view that is coupled to the first chamber tuning plates 146a.The first chamber control assembly 145a can have an x/z planar offset (z associated with it with the first chamber tuning plates 146a 1aa), and an x/z planar offset (z 1aa) can change to about 10mm from about 1mm.
The first chamber control assembly 145a can be for humorous apart from 148a by the first chamber tuning plates 146a mobile 147a intonation in an EM energy tuning space 169a.Controller 195 can be coupled 196 to chamber control assembly 145a, and controller 195 can utilize technical recipe to set up, control and to optimize intonation humorous apart from 148a, to control in real time and to maintain the plasma uniformity of processing in space 115.For example, intonation is humorous can change to about 10mm from about 0.01mm apart from 148a, and intonation humorous apart from 148a can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
In addition, the front view of the first microwave processing system 100 comprises the partial elevation view of the second chamber control assembly 145b, and the partial elevation view of the second chamber control assembly 145b is shown as the front view that is coupled to the second chamber tuning plates 146b.The second chamber control assembly 145b can have the two x/z planar offset (z associated with it with the second chamber tuning plates 146b 1ba), and the 2nd x/z planar offset (z 1ba) can change to about 10mm from about 1mm.
The second chamber control assembly 145b can be for humorous apart from 148b by the second chamber tuning plates 146b mobile 147b second intonation in the 2nd EM energy tuning space 169b.Controller 195 196 to the second chamber control assembly 145b that can be coupled, and controller 195 can utilize technical recipe to set up, control and to optimize the second intonation humorous apart from 148b, to control in real time and to maintain the plasma uniformity of processing in space 115.For example, the second intonation is humorous can change to about 10mm from about 0.01mm apart from 148b, and the second intonation humorous apart from 148b can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
Fig. 1 C shows the side view in partial cross-section of the process chamber 110 in the first microwave processing system 100.End view shows and is coupled to first interface assembly 112a and is coupled to the biopsy cavity marker devices y/z plan view that the second interface module 112b(generates the processing space 115 in process chamber 110 thus) the y/z plan view of a plurality of locular walls 112.The first microwave processing system 100 can be configured to form homogeneous plasma in processing space 115.
The partial side view of an EM energy tuning space 169a in the first chamber assembly 168a and the partial side view of the 2nd EM energy tuning space 169b in the second chamber assembly 168b have been shown in Fig. 1 C.The partial side view of the first plasma tuning plug group (170a-170e) has been shown, the partial side view of the partial side view of the first plasma tuning plates group (161a-161e), the second plasma tuning plug group (170f-170j) and the partial side view of the second plasma tuning plates group (161f-161j) in Fig. 1 C.
The end view of the first barrier assembly group (164a, 164b, 164c, 164d and 164e) and the second barrier assembly group (164f, 164g, 164h, 164i and 164j) has been shown in Fig. 1 C.For example, the first barrier assembly group (164a, 164b, 164c, 164d and 164e) can be for being coupled to first interface assembly 112a by the first plasma tuning plug group { (170a, 170b, 170c, 170d and 170e) and (175a, 175b, 175c, 175d and 175e) } removably.Each in the first barrier assembly group (164a, 164b, 164c, 164d and 164e) can be coupled to first interface assembly 112a removably.In addition, the second barrier assembly group (164f, 164g, 164h, 164i and 164j) can be for being coupled to the second interface module 112b by the second plasma tuning plug group { (170f, 170g, 170h, 170i and 170j) and (175f, 175g, 175h, 175i and 175j) } removably.Each in the second barrier assembly group (164f, 164g, 164h, 164i and 164j) can be coupled to the second interface module 112b removably.
As shown in Figure 1 C, the first plasma tuning plates group (161a, 161b, 161c, 161d and 161e) can be coupled to the first control assembly group (160a, 160b, 160c, 160d and 160e), and the first control assembly group (160a, 160b, 160c, 160d and 160e) can be for by the first plasma tuning plates group (161a, 161b, 161c, 161d and 161e) in an EM energy tuning space 169a with respect to EM tuning part (175a, 175b, 175c, 175d and 175e) mobile (163a, 163b, 163c, 163d and 163e) EM is tuning apart from group (177a, 177b, 177c, 177d and 177e).In addition, the second plasma tuning plates group (161f, 161g, 161h, 161i and 161j) can be coupled to the second control assembly group (160f, 160g, 160h, 160i and 160j), and the second control assembly group (160f, 160g, 160h, 160i and 160j) can be for by the second plasma tuning plates group (161f, 161g, 161h, 161i and 161j) in the 2nd EM energy tuning space 169b with respect to EM tuning part (175f, 175g, 175h, 175i and 175j) mobile (163f, 163g, 163h, 163i and 163j) the 2nd EM is tuning apart from group (177f, 177g, 177h, 177i and 177j).
The first control assembly group (160a, 160b, 160c, 160d and 160e) can be coupled 196 to controller 195, and controller 195 can utilize technical recipe to set up, control and it is tuning apart from group (177a, 177b, 177c, 177d and 177e) to optimize an EM, to control the plasma uniformity of processing in space 115.In addition, the second control assembly group (160f, 160g, 160h, 160i and 160j) can be coupled 196 to controller 195, and controller 195 can utilize technical recipe to set up, control and it is tuning apart from group (177f, 177g, 177h, 177i and 177j) to optimize the 2nd EM, to control the plasma uniformity of processing in space 115.
Controller 195 can be coupled 196 to EM sources (150a, 150b), matching network (152a, 152b), coupling network (154a, 154b) and chamber assembly (168a, 168b), and controller 195 can utilize technical recipe to set up, control and optimize EM source (150a, 150b), matching network (152a, 152b), coupling network (154a, 154b) and chamber assembly (168a, 168b), to control the plasma uniformity of processing in space 115.For example, EM source (150a, 150b) can be in the frequency work from about 500MHz to about 5000MHz.In addition, controller 195 can be coupled 196 to plasma sensor 106, processes sensor 107 and cavity sensor (108a and 108b), and controller 195 can utilize technical recipe to set up, control and optimize the data from plasma sensor 106, processes sensor 107 and cavity sensor (108a and 108b), to control the plasma uniformity of processing in space 115.
End view shows has overall width (y associated with it in y/z plane t) and total height (z t) process chamber 110.Overall width (y t) can change to about 500mm from about 50mm, and total height (z t) can change to about 500mm from about 50mm.
Fig. 2 A shows the biopsy cavity marker devices top view of the second process chamber 210 in the second microwave processing system 200.Top view shows first interface assembly 212a, the second interface module 212b and is coupled to first interface assembly 212a and the second interface module 212b and form thus the x/y plan view of a plurality of additional locular wall 212 of the second process chamber 210.For example, locular wall 212 can have the wall thickness associated with it (t), and wall thickness (t) can change to about 5mm from about 1mm.First interface assembly 212a can have the first interface thickness (t associated with it i1), and first interface thickness (t i1) can change to about 10mm from about 1mm.The second interface module 212b can have the second interface thickness (t associated with it i2), and the second interface thickness (t i2) can change to about 10mm from about 1mm.Process space 215 and can there is the length (x associated with it t), and length (x t) can change to about 500mm from about 10mm.
The top view of the second microwave processing system 200 shows the Section View of the first chamber assembly 268a therein with an EM energy tuning space 269a, and the first chamber assembly 268a can comprise the first chamber wall 265a, the second chamber wall 266a, at least one the 3rd chamber wall 267a and one or more additional chamber wall (not shown).For example, the first chamber assembly 268a can utilize the first chamber wall 265a to be coupled to first interface assembly 212a, and wall (265a, 266a and 267a) can comprise dielectric material and can have the wall thickness (t associated with it a), and wall thickness (t a) can change to about 5mm from about 1mm.In addition, an EM energy tuning space 269a can have the first length (x associated with it t1a) and the first width (y 1a), the first length (x t1a) can change to about 500mm from about 10mm, and the first width (y 1a) can change to about 50mm from about 5mm.
The top view of the second microwave processing system 200 also shows the Section View of the second chamber assembly 268b therein with the 2nd EM energy tuning space 269b, and the second chamber assembly 268b can comprise the first chamber wall 265b, the second chamber wall 266b, at least one the 3rd chamber wall 267b and one or more additional chamber wall (not shown).For example, the second chamber assembly 268b can utilize the first chamber wall 265b to be coupled to the second interface module 212b, and wall (265b, 266b and 267b) can comprise dielectric material and can have the wall thickness (t associated with it b), and wall thickness (t b) can change to about 5mm from about 1mm.In addition, the 2nd EM energy tuning space 269b can have the second length (x associated with it t1b) and the second width (y 1b), the second length (x t1b) can change to about 500mm from about 10mm, and the second width (y 1b) can change to about 50mm from about 5mm.
In some example system, the first barrier assembly group (264a, 264b, 264c and 264d) can be coupled to first interface assembly 212a removably, and can be configured to isolation processing space 215 and an EM energy tuning space 269a.The first barrier assembly group (264a, 264b, 264c and 264d) can be for being coupled to first interface assembly 212a by the first plasma tuning plug group { (270a, 270b, 270c and 270d) and (275a, 275b, 275c, 275d) } removably.For example, the first plasma tuning part group (270a, 270b, 270c and 270d) can be configured in to be processed in space 215, and an EM tuning part group (275a, 275b, 275c and 275d) can be configured in an EM energy tuning space 269a.
The second barrier assembly group (264e, 264f, 264g and 264h) can be coupled to the second interface module 212b removably, and can be configured to isolation processing space 215 and the 2nd EM energy tuning space 269b.The second barrier assembly group (264e, 264f, 264g and 264h) can be for being coupled to the second interface module 212b by the second plasma tuning plug group { (270e, 270f, 270g and 270h) and (275e, 275f, 275g and 275h) } removably.For example, the second plasma tuning part group (270e, 270f, 270g and 270h) can be configured in to be processed in space 215, and the 2nd EM tuning part group (275e, 275f, 275g and 275h) can be configured in the 2nd EM energy tuning space 269b.
Still with reference to figure 2A, the first plasma tuning plug (270a, 275a) can comprise dielectric material, and can there is the first plasma tuning part 270a, the first plasma tuning part 270a can extend in space 215 that the first plasma is tuning to be arrived and utilize (x apart from 271a to processing 2a) primary importance that limits.The first plasma is tuning can change to about 400mm from about 10mm apart from 271a.
In the one EM energy tuning space 269a that can set up in the first chamber assembly 268a, an EM coupling regime 262a is based upon with the first chamber wall 265a at a distance of an EM coupling distance 276a place, and an EM tuning part 275a can extend in an EM coupling regime 262a.The one EM tuning part 275a can obtain the first microwave energy from an EM coupling regime 262a, and the first microwave energy can utilize the first plasma tuning part 270a and be sent to the primary importance (x that processes space 215 2a) locate.The one EM coupling regime 262a can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, an EM coupling distance 276a can change to about 10mm from about 0.01mm, and an EM coupling distance 276a can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The first plasma tuning plates 261a can comprise dielectric material, can be coupled to the first control assembly 260a, and can be tuning apart from 277a for the first plasma tuning plates 261a being moved to 263a the one EM with respect to an EM tuning part 275a of the first plasma tuning plug (270a, 275a) in an EM energy tuning space 269a.The first control assembly 260a and the first plasma tuning plates 261a can be for being optimized be coupled to the microwave energy of an EM tuning part 275a of the first plasma tuning plug (270a, 275a) from an EM coupling regime 262a.For example, between an EM tuning part 275a that can be in an EM energy tuning space 269a and the first plasma tuning plates 261a, set up an EM tuning apart from 277a, and an EM is tuning, apart from 277a, can change to about 1mm from about 0.01mm.
The first plasma tuning plug (270a, 275a) can have the first diameter (d associated with it 1a), the first diameter (d 1a) can change to about 1mm from about 0.01mm.The first plasma tuning plates 261a can have the first diameter (D associated with it 1a), the first diameter (D 1a) can change to about 10mm from about 1mm.The one EM coupling regime 262a, the first control assembly 260a can have an x/ associated with it with the first plasma tuning plates 261a yplanar offset (x 1a), and an x/y planar offset (x 1a) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The first control assembly 260a can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1a).
The second plasma tuning plug (270b, 275b) can comprise dielectric material, and can there is the second plasma tuning part 270b, the second plasma tuning part 270b can extend in space 215 that the second plasma is tuning to be arrived and utilize (x apart from 271b to processing 2b) second place that limits.For example, the second plasma is tuning can change to about 400mm from about 10mm apart from 271b.
In the one EM energy tuning space 269a that can set up in the first chamber assembly 268a, the 2nd EM coupling regime 262b is based upon with the first chamber wall 265a at a distance of the 2nd EM coupling distance 276b place, and the 2nd EM tuning part 275b can extend in the 2nd EM coupling regime 262b.The 2nd EM tuning part 275b can obtain the second microwave energy from the 2nd EM coupling regime 262b, and the second microwave energy can utilize the second plasma tuning part 270b and be sent to the second place (x that processes space 215 1b) locate.The 2nd EM coupling regime 262b can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 2nd EM coupling distance 276b can change to about 10mm from about 0.01mm, and the 2nd EM coupling distance 276b can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The second plasma tuning plates 261b can comprise dielectric material, can be coupled to the second control assembly 260b, and can be tuning apart from 277b for the second plasma tuning plates 261b being moved to 263b the 2nd EM with respect to the 2nd EM tuning part 275b of the second plasma tuning plug (270b, 275b) in an EM energy tuning space 269a.The second control assembly 260b and the second plasma tuning plates 261b can be for being optimized be coupled to the microwave energy of the 2nd EM tuning part 275b of the second plasma tuning plug (270b, 275b) from the 2nd EM coupling regime 262b.For example, between the 2nd EM tuning part 275b that can be in an EM energy tuning space 269a and the second plasma tuning plates 261b, set up the 2nd EM tuning apart from 277b, and the 2nd EM is tuning, apart from 277b, can change to about 1mm from about 0.01mm.
The second plasma tuning plug (270b, 275b) can have the Second bobbin diameter (d associated with it 1b), Second bobbin diameter (d 1b) can change to about 1mm from about 0.01mm.The second plasma tuning plates 261b can have the Second bobbin diameter (D associated with it 1b), Second bobbin diameter (D 1b) can change to about 10mm from about 1mm.The 2nd EM coupling regime 262b, the second control assembly 260b can have the two x/y planar offset (x associated with it with the second plasma tuning plates 261b 1b), and the 2nd x/y planar offset (x 1b) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The second control assembly 260b can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1b).
C grade gas ions tuning plug (270c, 275c) can comprise dielectric material, and can there is C grade gas ions tuning part 270c, C grade gas ions tuning part 270c can extend in space 215 that C grade gas ions is tuning to be arrived and utilize (x apart from 271c to processing 2c) the 3rd position that limits.For example, C grade gas ions is tuning can change to about 400mm from about 10mm apart from 271c.
In the one EM energy tuning space 269a that can set up in the first chamber assembly 268a, the 3rd EM coupling regime 262c is based upon with the first chamber wall 265a at a distance of the 3rd EM coupling distance 276c place, and the 3rd EM tuning part 275c can extend in the 3rd EM coupling regime 262c.The 3rd EM tuning part 275c can obtain the 3rd microwave energy from the 3rd EM coupling regime 262c, and the 3rd microwave energy can utilize C grade gas ions tuning part 270c and be sent to the 3rd position (x that processes space 215 2c) locate.The 3rd EM coupling regime 262c can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 3rd EM coupling distance 276c can change to about 10mm from about 0.01mm, and the 3rd EM coupling distance 276c can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
C grade gas ions tuning plates 261c can comprise dielectric material, can be coupled to the 3rd control assembly 260c, and can be tuning apart from 277c for C grade gas ions tuning plates 261c being moved to 263c the 3rd EM with respect to the 3rd EM tuning part 275c of C grade gas ions tuning plug (270c, 275c) in an EM energy tuning space 269a.The 3rd control assembly 260c and C grade gas ions tuning plates 261c can be for being optimized be coupled to the microwave energy of the 3rd EM tuning part 275c of C grade gas ions tuning plug (270c, 275c) from the 3rd EM coupling regime 262c.For example, between the 3rd EM tuning part 275c that can be in an EM energy tuning space 269a and C grade gas ions tuning plates 261c, set up the 3rd EM tuning apart from 277c, and the 3rd EM is tuning, apart from 277c, can change to about 1mm from about 0.01mm.
C grade gas ions tuning plug (270c, 275c) can have the three diameter (d associated with it 1c), the 3rd diameter (d 1c) can change to about 1mm from about 0.01mm.C grade gas ions tuning plates 261c can have the three diameter (D associated with it 1c), the 3rd diameter (D 1c) can change to about 10mm from about 1mm.The 3rd EM coupling regime 262c, the 3rd control assembly 260c can have three x/ associated with it with C grade gas ions tuning plates 261c yplanar offset (x 1c), and the 3rd x/y planar offset (x 1c) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 3rd control assembly 260c can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1c).
Fourth class gas ions tuning plug (270d, 275d) can comprise dielectric material, and can there is fourth class gas ions tuning part 270d, fourth class gas ions tuning part 270d can extend in space 215 that fourth class gas ions is tuning to be arrived and utilize (x apart from 271d to processing 2d) the 4th position that limits.For example, fourth class gas ions is tuning can change to about 400mm from about 10mm apart from 271d.
In the one EM energy tuning space 269a that can set up in the first chamber assembly 268a, the 4th EM coupling regime 262d is based upon with the first chamber wall 265a at a distance of the 4th EM coupling distance 276d place, and the 4th EM tuning part 275d can extend in the 4th EM coupling regime 262d.The 4th EM tuning part 275d can obtain the 4th microwave energy from the 4th EM coupling regime 262d, and the 4th microwave energy can utilize fourth class gas ions tuning part 270d and be sent to the 4th position (x that processes space 215 2d) locate.The 4th EM coupling regime 262d can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 4th EM coupling distance 276d can change to about 10mm from about 0.01mm, and the 4th EM coupling distance 276d can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
Fourth class gas ions tuning plates 261d can comprise dielectric material, can be coupled to the 4th control assembly 260d, and can be tuning apart from 277d for fourth class gas ions tuning plates 261d being moved to 263d the 4th EM with respect to the 4th EM tuning part 275d of fourth class gas ions tuning plug (270d, 275d) in an EM energy tuning space 269a.The 4th control assembly 260d and fourth class gas ions tuning plates 261d can be for being optimized be coupled to the microwave energy of the 4th EM tuning part 275d of fourth class gas ions tuning plug (270d, 275d) from the 4th EM coupling regime 262d.For example, between the 4th EM tuning part 275d that can be in an EM energy tuning space 269a and fourth class gas ions tuning plates 261d, set up the 4th EM tuning apart from 277d, and the 4th EM is tuning, apart from 277d, can change to about 1mm from about 0.01mm.
Fourth class gas ions tuning plug (270d, 275d) can have the four diameter (d associated with it 1d), the 4th diameter (d 1d) can change to about 1mm from about 0.01mm.Fourth class gas ions tuning plates 261d can have the four diameter (D associated with it 1d), the 4th diameter (D 1d) can change to about 10mm from about 1mm.The 4th EM coupling regime 262d, the 4th control assembly 260d can have the four x/y planar offset (x associated with it with fourth class gas ions tuning plates 261d 1d), and the 4th x/y planar offset (x 1d) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 4th control assembly 260d can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1d).
The 5th plasma tuning plug (270e, 275e) can comprise dielectric material, and can there is the 5th plasma tuning part 270e, the 5th plasma tuning part 270e can extend in space 215 that the 5th plasma is tuning to be arrived and utilize (x apart from 271e to processing 2e) the 5th position that limits.For example, the 5th plasma is tuning can change to about 400mm from about 10mm apart from 271e.
In the 2nd EM energy tuning space 269b that can set up in the second chamber assembly 268b, the 5th EM coupling regime 262e is based upon with the first chamber wall 265b at a distance of the 5th EM coupling distance 276e place, and the 5th EM tuning part 275e can extend in the 5th EM coupling regime 262e.The 5th EM tuning part 275e can obtain the 5th microwave energy from the 5th EM coupling regime 262e, and the 5th microwave energy can utilize the 5th plasma tuning part 270e and be sent to the 5th position (x that processes space 215 2e) locate.The 5th EM coupling regime 262e can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 5th EM coupling distance 276e can change to about 10mm from about 0.01mm, and the 5th EM coupling distance 276e can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 5th plasma tuning plates 261e can comprise dielectric material, can be coupled to the 5th control assembly 260e, and can be tuning apart from 277e for the 5th plasma tuning plates 261e being moved to 263e the 5th EM with respect to the 5th EM tuning part 275e of the 5th plasma tuning plug (270e, 275e) in an EM energy tuning space 269a.The 5th control assembly 260e and the 5th plasma tuning plates 261e can be for being optimized be coupled to the microwave energy of the 5th EM tuning part 275e of the 5th plasma tuning plug (270e, 275e) from the 5th EM coupling regime 262e.For example, between the 5th EM tuning part 275e that can be in the 2nd EM energy tuning space 269b and the 5th plasma tuning plates 261e, set up the 5th EM tuning apart from 277e, and the 5th EM is tuning, apart from 277e, can change to about 1mm from about 0.01mm.
The 5th plasma tuning plug (270e, 275e) can have the five diameter (d associated with it 1e), the 5th diameter (d 1e) can change to about 1mm from about 0.01mm.The 5th plasma tuning plates 261e can have the five diameter (D associated with it 1e), the 5th diameter (D 1e) can change to about 10mm from about 1mm.The 5th EM coupling regime 262e, the 5th control assembly 260e can have the five x/y planar offset (x associated with it with the 5th plasma tuning plates 261e 1e), and the 5th x/y planar offset (x 1e) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 5th control assembly 260e can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1e).
Still with reference to figure 2A, the 6th plasma tuning plug (270f, 275f) can comprise dielectric material, and can there is the 6th plasma tuning part 270f, the 6th plasma tuning part 270f can extend in space 215 that the 6th plasma is tuning to be arrived and utilize (x apart from 271f to processing 2f) the 6th position that limits.The 6th plasma is tuning can change to about 400mm from about 10mm apart from 271f.
In the 2nd EM energy tuning space 269b that can set up in the second chamber assembly 268b, the 6th EM coupling regime 262f is based upon with the first chamber wall 265b at a distance of the 6th EM coupling distance 276f place, and the 6th EM tuning part 275f can extend in the 6th EM coupling regime 262f.The 6th EM tuning part 275f can obtain the 6th microwave energy from the 6th EM coupling regime 262f, and the 6th microwave energy can utilize the 6th plasma tuning part 270f and be sent to the 6th position (x that processes space 215 2f) locate.The 6th EM coupling regime 262f can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 6th EM coupling distance 276f can change to about 10mm from about 0.01mm, and the 6th EM coupling distance 276f can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 6th plasma tuning plates 261f can comprise dielectric material, can be coupled to the 6th control assembly 260f, and can be tuning apart from 277f for the 6th plasma tuning plates 261f being moved to 263f the 6th EM with respect to the 6th EM tuning part 275f of the 6th plasma tuning plug (270f, 275f) in the 2nd EM energy tuning space 269b.The 6th control assembly 260f and the 6th plasma tuning plates 261f can be for being optimized be coupled to the microwave energy of the 6th EM tuning part 275f of the 6th plasma tuning plug (270f, 275f) from the 6th EM coupling regime 262f.For example, between the 6th EM tuning part 275f that can be in the 2nd EM energy tuning space 269b and the 6th plasma tuning plates 261f, set up the 6th EM tuning apart from 277f, and the 6th EM is tuning, apart from 277f, can change to about 1mm from about 0.01mm.
The 6th plasma tuning plug (270f, 275f) can have the six diameter (d associated with it 1f), the 6th diameter (d 1f) can change to about 1mm from about 0.01mm.The 6th plasma tuning plates 261f can have the six diameter (D associated with it 1f), the 6th diameter (D 1f) can change to about 10mm from about 1mm.The 6th EM coupling regime 262f, the 6th control assembly 260f can have the six x/y planar offset (x associated with it with the 6th plasma tuning plates 261f 1f), and the 6th x/y planar offset (x 1f) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 6th control assembly 260f can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1f).
The 7th plasma tuning plug (270g, 275g) can comprise dielectric material, and can there is the 7th plasma tuning part 270g, the 7th plasma tuning part 270g can extend in space 215 that the 7th plasma is tuning to be arrived and utilize (x apart from 271g to processing 2g) the 7th position that limits.The 7th plasma is tuning can change to about 400mm from about 10mm apart from 271g.
In the 2nd EM energy tuning space 269b that can set up in the second chamber assembly 268b, the 7th EM coupling regime 262g is based upon with the first chamber wall 265b at a distance of the 7th EM coupling distance 276g place, and the 7th EM tuning part 275g can extend in the 7th EM coupling regime 262g.The 7th EM tuning part 275g can obtain the 7th microwave energy from the 7th EM coupling regime 262g, and the 7th microwave energy can utilize the 7th plasma tuning part 270g and be sent to the 7th position (x that processes space 215 2g) locate.The 7th EM coupling regime 262g can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 7th EM coupling distance 276g can change to about 10mm from about 0.01mm, and the 7th EM coupling distance 276g can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 7th plasma tuning plates 261g can comprise dielectric material, can be coupled to the 7th control assembly 260g, and can be tuning apart from 277g for the 7th plasma tuning plates 261g being moved to 263g the 7th EM with respect to the 7th EM tuning part 275g of the 7th plasma tuning plug (270g, 275g) in the 2nd EM energy tuning space 269b.The 7th control assembly 260g and the 7th plasma tuning plates 261g can be for being optimized be coupled to the microwave energy of the 7th EM tuning part 275g of the 7th plasma tuning plug (270g, 275g) from the 7th EM coupling regime 262g.For example, between the 7th EM tuning part 275g that can be in the 2nd EM energy tuning space 269b and the 7th plasma tuning plates 261g, set up the 7th EM tuning apart from 277g, and the 7th EM is tuning, apart from 277g, can change to about 1mm from about 0.01mm.
The 7th plasma tuning plug (270g, 275g) can have the seven diameter (d associated with it 1g), the 7th diameter (d 1g) can change to about 1mm from about 0.01mm.The 7th plasma tuning plates 261g can have the seven diameter (D associated with it 1g), the 7th diameter (D 1g) can change to about 10mm from about 1mm.The 7th EM coupling regime 262g, the 7th control assembly 260g can have the seven x/y planar offset (x associated with it with the 7th plasma tuning plates 261g 1g), and the 7th x/y planar offset (x 1g) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 7th control assembly 260g can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1g).
The 8th plasma tuning plug (270h, 275h) can comprise dielectric material, and can there is the 8th plasma tuning part 270h, the 8th plasma tuning part 270h can extend in space 215 that the 8th plasma is tuning to be arrived and utilize (x apart from 271h to processing 2h) 8 positions that limits.The 8th plasma is tuning can change to about 400mm from about 10mm apart from 271h.
In the 2nd EM energy tuning space 269b that can set up in the second chamber assembly 268b, the 8th EM coupling regime 262h is based upon with the first chamber wall 265b at a distance of the 8th EM coupling distance 276h place, and the 8th EM tuning part 275h can extend in the 8th EM coupling regime 262h.The 8th EM tuning part 275h can obtain the 8th microwave energy from the 8th EM coupling regime 262h, and the 8th microwave energy can utilize the 8th plasma tuning part 270h and be sent to the 8 positions (x that processes space 215 2h) locate.The 8th EM coupling regime 262h can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 8th EM coupling distance 276h can change to about 10mm from about 0.01mm, and the 8th EM coupling distance 276h can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 8th plasma tuning plates 261h can comprise dielectric material, can be coupled to the 8th control assembly 260h, and can be tuning apart from 277h for the 8th plasma tuning plates 261h being moved to 263h the 8th EM with respect to the 8th EM tuning part 275h of the 8th plasma tuning plug (270h, 275h) in the 2nd EM energy tuning space 269b.The 8th control assembly 260h and the 8th plasma tuning plates 261h can be for being optimized be coupled to the microwave energy of the 8th EM tuning part 275h of the 8th plasma tuning plug (270h, 275h) from the 8th EM coupling regime 262h.For example, between the 8th EM tuning part 275h that can be in the 2nd EM energy tuning space 269b and the 8th plasma tuning plates 261h, set up the 8th EM tuning apart from 277h, and the 8th EM is tuning, apart from 277h, can change to about 1mm from about 0.01mm.
The 8th plasma tuning plug (270h, 275h) can have the eight diameter (d associated with it 1h), the 8th diameter (d 1h) can change to about 1mm from about 0.01mm.The 8th plasma tuning plates 261h can have the eight diameter (D associated with it 1h), the 8th diameter (D 1h) can change to about 10mm from about 1mm.The 8th EM coupling regime 262h, the 8th control assembly 260h can have the eight x/y planar offset (x associated with it with the 8th plasma tuning plates 261h 1h), and the 8th x/y planar offset (x 1h) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 8th control assembly 260h can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1h).
The top view of the second microwave processing system 200 comprises the top view of the first chamber control assembly 245a, and the top view of the first chamber control assembly 245a is shown as the top view that is coupled to the first chamber tuning plates 246a.The first chamber control assembly 245a can comprise dielectric material, and can have the first diameter (d associated with it 1aa), and the first diameter (d 1aa) can change to about 1mm from about 0.01mm.The first chamber tuning plates 246a can comprise dielectric material, and can have the Second bobbin diameter (D associated with it 1aa), and Second bobbin diameter (D 1aa) can change to about 10mm from about 1mm.The first chamber control assembly 245a can have an x/y planar offset (y associated with it with the first chamber tuning plates 246a 1aa), and an x/y planar offset (y 1aa) can change to about 10mm from about 1mm.
In addition, the top view of the second microwave processing system 200 comprises the top view of the second chamber control assembly 245b, and the top view of the second chamber control assembly 245b is illustrated the top view that is coupled to the second chamber tuning plates 246b.The second chamber control assembly 245b can comprise dielectric material, and can have the first additional diameter (d associated with it 1ba), and the first additional diameter (d 1ba) can change to about 1mm from about 0.01mm.The second chamber tuning plates 246b can comprise dielectric material, and can have the second additional diameter (D associated with it 1ba), and the second additional diameter (D 1ba) can change to about 10mm from about 1mm.The second chamber control assembly 245b can have the two x/y planar offset (y associated with it with the second chamber tuning plates 246b 1ba), and the 2nd x/y planar offset (y 1ba) can change to about 10mm from about 1mm.
Fig. 2 B shows the biopsy cavity marker devices front view of the second process chamber 210 in the second microwave processing system 200.The x/z plan view of a plurality of additional wall 212 that front view shows (generating thus the biopsy cavity marker devices front view in the processing space 215 in the second process chamber 210) coupled to each other.The second microwave processing system 200 can be configured to form uniform plasma in processing space 215.
Front view shows the Section View of the first chamber assembly 268a therein with an EM energy tuning space 269a, and the first chamber assembly 268a can comprise the first chamber wall 265a, the second chamber wall 266a, at least one the 3rd chamber wall 267a and one or more additional chamber wall (not shown).For example, the first chamber assembly 268a can utilize the first chamber wall 265a to be coupled to first interface assembly 212a.Front view also shows the Section View of the second chamber assembly 268b therein with the 2nd EM energy tuning space 269b, and the second chamber assembly 268b can comprise the first chamber wall 265b, the second chamber wall 266b, at least one the 3rd chamber wall 267b and one or more additional chamber wall (not shown).For example, the second chamber assembly 268b can utilize the first chamber wall 265b to be coupled to the second interface module 212b.
The partial elevation view (dashed-line view) of the first plasma tuning plug group (270a-270d) has been shown, the partial elevation view (dotted line view) of the partial elevation view (dashed-line view) of the first plasma tuning plates group (261a-261d), the second plasma tuning plug group (270e-270h) and the partial elevation view (dotted line view) of the second plasma tuning plates group (261e-261h) in Fig. 2 B.
The first plasma tuning plug group (270a-270d) can have an x/y planar offset group (x associated with it with the first plasma tuning plates group (261a-261d) 2a-d), and an x/y planar offset group (x 2a-d) can change to about 100mm from about 10mm.The first plasma tuning plug group (270a-270d) can have an x/z planar offset group (z associated with it with the first plasma tuning plates group (261a-261d) 1a-d), and an x/z planar offset group (z 1a-d) can change to about 400mm from about 100mm.
The second plasma tuning plug group (270e-270h) can have the two x/y planar offset group (x associated with it with the second plasma tuning plates group (261e-261h) 2e-h), and the 2nd x/y planar offset group (x 2e-h) can change to about 100mm from about 10mm.The second plasma tuning plug group (270e-270h) can have the two x/z planar offset group (z associated with it with the second plasma tuning plates group (261e-261h) 1e-h), and the 2nd x/z planar offset group (z 1e-h) can change to about 400mm from about 100mm.
Fig. 2 B shows the second microwave processing system 200 can comprise one or more plasma sensors 206, and one or more plasma sensors 206 are coupled to locular wall 212 to obtain the first plasma data.In addition, the second microwave processing system 200 can be configured to process the substrate of 200mm, the substrate of 300mm or larger sized substrate.In addition, can be configured separately with chamber rectangle columniform, square, so that the second microwave processing system 200 can be configured to substrate, wafer or the LCD of circular, square or rectangle to process and no matter what kind of their size is, as skilled in the art will appreciate.Therefore,, although will describe each aspect of the present invention in conjunction with the processing of semiconductor chip, the present invention is not limited only to this.
As shown in Figure 2 B, an EM source 250a can be coupled to the first chamber assembly 268a, and the 2nd EM source 250b can be coupled to the second chamber assembly 268b.The one EM source 250a can be coupled to the first matching network 252a, and the first matching network 252a can be coupled to the first coupling network 254a.The 2nd EM source 250b can be coupled to the second matching network 252b, and the second matching network 252b can be coupled to the second coupling network 254b.Alternatively, can use a plurality of matching network (not shown) or a plurality of coupling network (not shown).
The first coupling network 254a can be coupled to the first chamber assembly 268a removably, and the first chamber assembly 268a can be coupled to the top of the first interface assembly 212a of process chamber 210 removably.The first coupling network 254a can provide microwave energy for the EM energy tuning space 269a in the first chamber assembly 268a.The second coupling network 254b can be coupled to the second chamber assembly 268b removably, and the second chamber assembly 268b can be coupled to the top of the second interface module 212b of process chamber 210 removably.The second coupling network 254b can provide additional microwave energy for the 2nd EM energy tuning space 269b in the second chamber assembly 268b.Alternatively, can use other EM coupled structures.
As shown in Figure 2 B, controller 295 can be coupled 296 to EM sources (250a, 250b), matching network (252a, 252b), coupling network (254a, 254b) and chamber assembly (268a, 268b), and controller 295 can utilize technical recipe to set up, control and optimize EM source (250a, 250b), matching network (252a, 252b), coupling network (254a, 254b) and chamber assembly (268a, 268b), to control the plasma uniformity of processing in space 215.For example, EM source (250a, 250b) can be in the frequency work from about 500MHz to about 5000MHz.In addition, controller 295 can be coupled 296 to plasma sensor 206 and processes sensor 207, and controller 295 can utilize technical recipe to set up, control and optimize the data from plasma sensor 206 and processes sensor 207, to control the plasma uniformity of processing in space 215.
In addition, controller 295 can be coupled 296 to gas supply system 240, is coupled to gas supply sub-component 241 and is coupled to gas tip 243.For example, gas supply system 240, gas supply sub-component 241 and gas tip 243 can be configured to that one or more are processed to gas and cause processing space 215, and can comprise flow control and/or flow measurement device.
During dry plasma etch, process gas and can comprise etchant, passivator or inert gas or the wherein combination of two or more.For example,, when plasma etching is such as silica (SiO x) or silicon nitride (Si xn y) dielectric film time, plasma etching gas composition generally includes such as C 4f 8, C 5f 8, C 3f 6, C 4f 6, CF 4deng at least one the fluorine-based chemical composition (C of carbon xf y), and/or can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z), and can there is inert gas, oxygen, CO or CO 2in at least one.In addition, for example, when etching polysilicon (polysilicon), plasma etching gas composition generally includes such as HBr, Cl 2, NF 3, or SF 6, or the halogen-containing gas of the combination of two or more wherein, and can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z) and inert gas, oxygen, CO or CO 2in at least one or wherein two or more.During plasma enhanced deposition, process gas and can comprise into film precursor, reducibility gas or inert gas or the wherein combination of two or more.
As shown in Figure 2 B, the second microwave processing system 200 can comprise port 291 and the control pressurer system 290 that is coupled to process chamber 210, and is configured to emptying process chamber 210, and controls the pressure in process chamber 210.In addition, the second microwave processing system 200 can comprise the substrate holder (substrate holder) 220 of processing space 215 for substrate 205 is arranged on.
The front view of the second microwave processing system 200 comprises the partial elevation view of the first chamber control assembly 245a, and the partial elevation view of the first chamber control assembly 245a is shown as the front view that is coupled to the first chamber tuning plates 246a.The first chamber control assembly 245a can have an x/z planar offset (z associated with it with the first chamber tuning plates 246a 1aa), and an x/z planar offset (z 1aa) can change to about 10mm from about 1mm.
The first chamber control assembly 245a can be humorous apart from 248a for the first chamber tuning plates 246a being moved to 247a intonation in an EM energy tuning space 269a.Controller 295 can be coupled 296 to chamber control assembly 245a, and controller 295 can utilize technical recipe to set up, control and to optimize intonation humorous apart from 248a, to control in real time and to maintain the plasma uniformity of processing in space 215.For example, intonation is humorous can change to about 10mm from about 0.01mm apart from 248a, and intonation humorous apart from 248a can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
In addition, the front view of the second microwave processing system 200 comprises the partial elevation view of the second chamber control assembly 245b, and the partial elevation view of the second chamber control assembly 245b is illustrated the front view that is coupled to the second chamber tuning plates 246b.The second chamber control assembly 245b can have the two x/z planar offset (z associated with it with the second chamber tuning plates 246b 1ba), the 2nd x/z planar offset (z 1ba) can change to about 10mm from about 1mm.
The second chamber control assembly 245b can be for humorous apart from 248b by the second chamber tuning plates 246b mobile 247b second intonation in the 2nd EM energy tuning space 269b.Controller 295 296 to the second chamber control assembly 245b that can be coupled, and controller 295 can utilize technical recipe to set up, control and to optimize the second intonation humorous apart from 248b, to control in real time and to maintain the plasma uniformity of processing in space 215.For example, the second intonation is humorous can change to about 10mm from about 0.01mm apart from 248b, and the second intonation humorous apart from 248b can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
Fig. 2 C shows the side view in partial cross-section of the second process chamber 210 in the second microwave processing system 200.End view shows and is coupled to first interface assembly 212a and is coupled to the side view in partial cross-section that the second interface module 212b(creates the processing space 215 in process chamber 210 thus) the y/z plan view of a plurality of locular walls 212.The second microwave processing system 200 can be configured to form plasma in processing space 215.
The partial side view of an EM energy tuning space 269a in the first chamber assembly 268a and the partial side view of the 2nd EM energy tuning space 269b in the second chamber assembly 268b have been shown in Fig. 2 C.The partial side view of the first plasma tuning plug group (270a-270d) has been shown, the partial side view of the partial side view of the first plasma tuning plates group (261a-261d), the second plasma tuning plug group (270e-270h) and the partial side view of the second plasma tuning plates group (261e-261h) in Fig. 2 C.
In Fig. 2 C, also show the end view of the first barrier assembly group (264a, 264b, 264c and 264d) and the second barrier assembly group (264e, 264f, 264g and 264h).For example, the first barrier assembly group (264a, 264b, 264c and 264d) can be for being coupled to first interface assembly 212a by the first plasma tuning plug group { (270a, 270b, 270c and 270d) and (275a, 275b, 275c and 275d) } removably.Each in the first barrier assembly group (264a, 264b, 264c and 264d) can be coupled to first interface assembly 212a removably.In addition, the second barrier assembly group (264e, 264f, 264g and 264h) can be for being coupled to the second interface module 212b by the second plasma tuning plug group { (270e, 270f, 270g and 270h) and (275e, 275f, 275g and 275h) } removably.Each in the second barrier assembly group (264e, 264f, 264g and 264h) can be coupled to the second interface module 212b removably.
As shown in Figure 2 C, the first plasma tuning plates group (261a, 261b, 261c and 261d) can be coupled to the first control assembly group (260a, 260b, 260c and 260d), and the first control assembly group (260a, 260b, 260c and 260d) can in an EM energy tuning space 269a by the first plasma tuning plates group (261a, 261b, 261c and 261d) with respect to EM tuning part (275a, 275b, 275c and 275d) mobile (263a, 263b, 263c and 263d) EM is tuning apart from group (277a, 277b, 277c and 277d).In addition, the second plasma tuning plates group (261e, 261f, 261g and 261h) can be coupled to the second control assembly group (260e, 260f, 260g and 260h), and the second control assembly group (260e, 260f, 260g and 260h) can be for tuning apart from group (277e, 277f, 277g and 277h) with respect to mobile (263e, 263f, 263g and 263h) the 2nd EM of EM tuning part (275e, 275f, 275g and 275h) by the second plasma tuning plates group (261e, 261f, 261g and 261h) in the 2nd EM energy tuning space 269b.
The first control assembly group (260a, 260b, 260c and 260d) can be coupled 296 to controller 295, and controller 295 can utilize technical recipe to set up, control and it is tuning apart from group (277a, 277b, 277c and 277d) to optimize an EM, to control the plasma uniformity of processing in space 215.In addition, the second control assembly group (260e, 260f, 260g and 260h) can be coupled 296 to controller 295, and controller 295 can utilize technical recipe to set up, control and it is tuning apart from group (277e, 277f, 277g and 277h) to optimize the 2nd EM, to control the plasma uniformity of processing in space 215.
Controller 295 can be coupled 296 to EM sources (250a, 250b), matching network (252a, 252b), coupling network (254a, 254b) and chamber assembly (268a, 268b), and controller 295 can utilize technical recipe to set up, control and optimize EM source (250a, 250b), matching network (252a, 252b), coupling network (254a, 254b) and chamber assembly (268a, 268b), to control the plasma uniformity of processing in space 215.For example, EM source (250a, 250b) can be in the frequency work from about 500MHz to about 5000MHz.In addition, controller 295 can be coupled 296 to plasma sensor 206, processes sensor 207 and cavity sensor (208a and 208b), and controller 295 can utilize technical recipe to set up, control and optimize the data from plasma sensor 206, processes sensor 207 and cavity sensor (208a and 208b), to control the plasma uniformity of processing in space 215.
End view shows has overall width (y associated with it in y/z plane t) and total height (z t) process chamber 210.For example, overall width (y t) can change to about 500mm from about 50mm, and total height (z t) can change to about 500mm from about 50mm.
Fig. 3 A shows the biopsy cavity marker devices top view of the 3rd process chamber 310 in the 3rd microwave processing system 300.Top view shows first interface assembly 312a, the second interface module 312b and is coupled to first interface assembly 312a and the second interface module 312b and form thus the x/y plan view of a plurality of additional locular wall 312 of the 3rd process chamber 310.For example, locular wall 312 can have the wall thickness associated with it (t), and wall thickness (t) can change to about 5mm from about 1mm.First interface assembly 312a can have the first interface thickness (t associated with it i1), and first interface thickness (t i1) can change to about 10mm from about 1mm.The second interface module 312b can have the second interface thickness (t associated with it i2), and the second interface thickness (t i2) can change to about 10mm from about 1mm.Process space 315 and can there is the length (x associated with it t), and length (x t) can change to about 500mm from about 10mm.
The top view of the 3rd microwave processing system 300 shows the Section View of the first chamber assembly 368a therein with an EM energy tuning space 369a, and the first chamber assembly 368a can comprise the first chamber wall 365a, the second chamber wall 366a, at least one the 3rd chamber wall 367a and one or more additional chamber wall (not shown).For example, the first chamber assembly 368a can utilize the first chamber wall 365a to be coupled to first interface assembly 312a, and wall (365a, 366a and 367a) can comprise dielectric material and can have the wall thickness (t associated with it a), and wall thickness (t a) can change to about 5mm from about 1mm.In addition, an EM energy tuning space 369a can have the first length (x associated with it t1a) and the first width (y 1a), the first length (x t1a) can change to about 500mm from about 10mm, and the first width (y 1a) can change to about 50mm from about 5mm.
The top view of the 3rd microwave processing system 300 also shows the Section View of the second chamber assembly 368b therein with the 2nd EM energy tuning space 369b, and the second chamber assembly 368b can comprise the first chamber wall 365b, the second chamber wall 366b, at least one the 3rd chamber wall 367b and one or more additional chamber wall (not shown).For example, the second chamber assembly 368b can utilize the first chamber wall 365b to be coupled to the second interface module 312b, and wall (365b, 366b and 367b) can comprise dielectric material and can have the wall thickness (t associated with it b), and wall thickness (t b) can change to about 5mm from about 1mm.In addition, the 2nd EM energy tuning space 369b can have the second length (x associated with it t1b) and the second width (y 1b), the second length (x t1b) can change to about 500mm from about 10mm, and the second width (y 1b) can change to about 50mm from about 5mm.
In some example system, the first barrier assembly group (364a, 364b and 364c) can be coupled to first interface assembly 312a removably, and can be configured to isolation processing space 315 and an EM energy tuning space 369a.The first barrier assembly group (364a, 364b and 364c) can be for being coupled to first interface assembly 312a by the first plasma tuning plug group { (370a, 370b and 370c) and (375a, 375b and 375c) } removably.For example, the first plasma tuning part group (370a, 370b and 370c) can be configured in to be processed in space 315, and an EM tuning part group (375a, 375b and 375c) can be configured in an EM energy tuning space 269a.
The second barrier assembly group (364d, 364e and 364f) can be coupled to the second interface module 312b removably, and can be configured to isolation processing space 315 and the 2nd EM energy tuning space 369b.The second barrier assembly group (364d, 364e and 364f) can be for being coupled to the second interface module 312b by the second plasma tuning plug group { (370d, 370e and 370f) and (375d, 375e and 375f) } removably.For example, the second plasma tuning part group (370d, 370e and 370f) can be configured in to be processed in space 315, and the 2nd EM tuning part group (375d, 375e and 375f) can be configured in the 2nd EM energy tuning space 369b.
Still with reference to figure 3A, the first plasma tuning plug (370a, 375a) can comprise dielectric material, and can there is the first plasma tuning part 370a, the first plasma tuning part 370a can extend in space 315 that the first plasma is tuning to be arrived and utilize (x apart from 371a to processing 2a) primary importance that limits.The first plasma is tuning can change to about 400mm from about 10mm apart from 371a.
In the one EM energy tuning space 369a that can set up in the first chamber assembly 368a, an EM coupling regime 362a is based upon with the first chamber wall 365a at a distance of an EM coupling distance 376a place, and an EM tuning part 375a can extend in an EM coupling regime 362a.The one EM tuning part 375a can obtain the first microwave energy from an EM coupling regime 362a, and the first microwave energy can utilize the first plasma tuning part 370a and be sent to the primary importance (x that processes space 315 2a) locate.The one EM coupling regime 362a can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, an EM coupling distance 376a can change to about 10mm from about 0.01mm, and an EM coupling distance 376a can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The first plasma tuning plates 361a can comprise dielectric material, can be coupled to the first control assembly 360a, and can be tuning apart from 377a for the first plasma tuning plates 361a being moved to 363a the one EM with respect to an EM tuning part 375a of the first plasma tuning plug (370a, 375a) in an EM energy tuning space 369a.The first control assembly 360a and the first plasma tuning plates 361a can be for being optimized be coupled to the microwave energy of an EM tuning part 375a of the first plasma tuning plug (370a, 375a) from an EM coupling regime 362a.For example, between an EM tuning part 375a that can be in an EM energy tuning space 369a and the first plasma tuning plates 361a, set up an EM tuning apart from 377a, and an EM is tuning, apart from 377a, can change to about 1mm from about 0.01mm.
The first plasma tuning plug (370a, 375a) can have the first diameter (d associated with it 1a), the first diameter (d 1a) can change to about 1mm from about 0.01mm.The first plasma tuning plates 361a can have the first diameter (D associated with it 1a), the first diameter (d 1a) can change to about 10mm from about 1mm.The one EM coupling regime 362a, the first control assembly 360a can have an x/y planar offset (x associated with it with the first plasma tuning plates 361a 1a), and an x/y planar offset (x 1a) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The first control assembly 360a can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1a).
The second plasma tuning plug (370b, 375b) can have the second plasma tuning part 370b, and the second plasma tuning part 370b can extend in space 315 that the second plasma is tuning to be arrived and utilize (x apart from 371b to processing 2b) second place that limits.For example, the second plasma is tuning can change to about 400mm from about 10mm apart from 371b.
In the one EM energy tuning space 369a that can set up in the first chamber assembly 368a, the 2nd EM coupling regime 362b is based upon with the first chamber wall 365a at a distance of the 2nd EM coupling distance 376b place, and the 2nd EM tuning part 375b can extend in the 2nd EM coupling regime 362b.The 2nd EM tuning part 375b can obtain the second microwave energy from the 2nd EM coupling regime 362b, and the second microwave energy can utilize the second plasma tuning part 370b and be sent to the second place (x that processes space 315 1b) locate.The 2nd EM coupling regime 362b can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 2nd EM coupling distance 376b can change to about 10mm from about 0.01mm, and the 2nd EM coupling distance 376b can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The second plasma tuning plates 361b can comprise dielectric material, can be coupled to the second control assembly 360b, and can be tuning apart from 377b for the second plasma tuning plates 361b being moved to 363b the 2nd EM with respect to the 2nd EM tuning part 375b of the second plasma tuning plug (370b, 375b) in an EM energy tuning space 369a.The second control assembly 360b and the second plasma tuning plates 361b can be for being optimized be coupled to the microwave energy of the 2nd EM tuning part 375b of the second plasma tuning plug (370b, 375b) from the 2nd EM coupling regime 362b.For example, between the 2nd EM tuning part 375b that can be in an EM energy tuning space 369a and the second plasma tuning plates 361b, set up the 2nd EM tuning apart from 377b, and the 2nd EM is tuning, apart from 377b, can change to about 1mm from about 0.01mm.
The second plasma tuning plug (370b, 375b) can have the Second bobbin diameter (d associated with it 1b),, Second bobbin diameter (d 1b) can change to about 1mm from about 0.01mm.The second plasma tuning plates 361b can have the Second bobbin diameter (D associated with it 1b), Second bobbin diameter (D 1b) can change to about 10mm from about 1mm.The 2nd EM coupling regime 362b, the second control assembly 360b can have the two x/y planar offset (x associated with it with the second plasma tuning plates 361b 1b), and the 2nd x/y planar offset (x 1b) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The second control assembly 360b can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1b).
C grade gas ions tuning plug (370c, 375c) can comprise dielectric material, and can there is C grade gas ions tuning part 370c, C grade gas ions tuning part 370c can to process in space 315, extend C grade gas ions tuning apart from 371c, arrive and utilize (x 2c) the 3rd position that limits.For example, C grade gas ions is tuning can change to about 400mm from about 10mm apart from 371c.
In the one EM energy tuning space 369a that can set up in the first chamber assembly 368a, the 3rd EM coupling regime 362c is based upon with the first chamber wall 365a at a distance of the 3rd EM coupling distance 376c place, and the 3rd EM tuning part 375c can extend in the 3rd EM coupling regime 362c.The 3rd EM tuning part 375c can obtain the 3rd microwave energy from the 3rd EM coupling regime 362c, and the 3rd microwave energy can utilize C grade gas ions tuning part 370c and be sent to the 3rd position (x that processes space 315 2c) locate.The 3rd EM coupling regime 362c can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.The 3rd EM coupling distance 376c can change to about 10mm from about 0.01mm, and the 3rd EM coupling distance 376c can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
C grade gas ions tuning plates 361c can comprise dielectric material, can be coupled to the 3rd control assembly 360c, and can be tuning apart from 377c for C grade gas ions tuning plates 361c being moved to 363c the 3rd EM with respect to the 3rd EM tuning part 375c of C grade gas ions tuning plug (370c, 375c) in an EM energy tuning space 369a.The 3rd control assembly 360c and C grade gas ions tuning plates 361c can be for being optimized be coupled to the microwave energy of the 3rd EM tuning part 375c of C grade gas ions tuning plug (370c, 375c) from the 3rd EM coupling regime 362c.For example, between the 3rd EM tuning part 375c that can be in an EM energy tuning space 369a and C grade gas ions tuning plates 361c, set up the 3rd EM tuning apart from 377c, and the 3rd EM is tuning, apart from 377c, can change to about 1mm from about 0.01mm.
C grade gas ions tuning plug (370c, 375c) can have the three diameter (d associated with it 1c), the 3rd diameter (d 1c) can change to about 1mm from about 0.01mm.C grade gas ions tuning plates 361c can have the three diameter (D associated with it 1c), the 3rd diameter (D 1c) can change to about 10mm from about 1mm.The 3rd EM coupling regime 362c, the 3rd control assembly 360c can have the three x/y planar offset (x associated with it with C grade gas ions tuning plates 361c 1c), and the 3rd x/y planar offset (x 1c) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).For example, the 3rd control assembly 360c can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1c).
Fourth class gas ions tuning plug (370d, 375d) can comprise dielectric material, and can there is fourth class gas ions tuning part 370d, fourth class gas ions tuning part 370d can extend in space 315 that fourth class gas ions is tuning to be arrived and utilize (x apart from 371d to processing 2d) the 4th position that limits.For example, fourth class gas ions is tuning can change to about 400mm from about 10mm apart from 371d.
In the 2nd EM energy tuning space 369b that can set up in the second chamber assembly 368b, the 4th EM coupling regime 362d is based upon with the first chamber wall 365b at a distance of the 4th EM coupling distance 376d place, and the 4th EM tuning part 375d can extend in the 4th EM coupling regime 362d.The 4th EM tuning part 375d can obtain the 4th microwave energy from the 4th EM coupling regime 362d, and the 4th microwave energy can utilize fourth class gas ions tuning part 370d and be sent to the 4th position (x that processes space 315 2d) locate.The 4th EM coupling regime 362d can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 4th EM coupling distance 376d can change to about 10mm from about 0.01mm, and the 4th EM coupling distance 376d can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
Fourth class gas ions tuning plates 361d can comprise dielectric material, can be coupled to the 4th control assembly 360d, and can be tuning apart from 377d for fourth class gas ions tuning plates 361d being moved to 363d the 4th EM with respect to the 4th EM tuning part 375d of fourth class gas ions tuning plug (370d, 375d) in the 2nd EM energy tuning space 369b.The 4th control assembly 360d and fourth class gas ions tuning plates 361d can be for being optimized be coupled to the microwave energy of the 4th EM tuning part 375d of fourth class gas ions tuning plug (370d, 375d) from the 4th EM coupling regime 362d.For example, between the 4th EM tuning part 375d that can be in the 2nd EM energy tuning space 369b and fourth class gas ions tuning plates 361d, set up the 4th EM tuning apart from 377d, and the 4th EM is tuning, apart from 377d, can change to about 1mm from about 0.01mm.
Fourth class gas ions tuning plug (370d, 375d) can have the four diameter (d associated with it 1d), the 4th diameter (d 1d) can change to about 1mm from about 0.01mm.Fourth class gas ions tuning plates 361d can have the four diameter (D associated with it 1d), the 4th diameter (D 1d) can change to about 10mm from about 1mm.The 4th EM coupling regime 362d, the 4th control assembly 360d can have the four x/y planar offset (x associated with it with fourth class gas ions tuning plates 361d 1d), and the 4th x/y planar offset (x 1d) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 4th control assembly 360d can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1d).
The 5th plasma tuning plug (370e, 375e) can comprise dielectric material, and can there is the 5th plasma tuning part 370e, the 5th plasma tuning part 370e can extend in space 315 that the 5th plasma is tuning to be arrived and utilize (x apart from 371e to processing 2e) the 5th position that limits.For example, the 5th plasma is tuning can change to about 400mm from about 10mm apart from 371e.
In the 2nd EM energy tuning space 369b that can set up in the second chamber assembly 368b, the 5th EM coupling regime 362e is based upon with the first chamber wall 365b at a distance of the 5th EM coupling distance 376e place, and the 5th EM tuning part 375e can extend in the 5th EM coupling regime 362e.The 5th EM tuning part 375e can obtain the 5th microwave energy from the 5th EM coupling regime 362e, and the 5th microwave energy can utilize the 5th plasma tuning part 370e and be sent to the 5th position (x that processes space 315 2e) locate.The 5th EM coupling regime 362e can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 5th EM coupling distance 376e can change to about 10mm from about 0.01mm, and the 5th EM coupling distance 376e can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 5th plasma tuning plates 361e can comprise dielectric material, can be coupled to the 5th control assembly 360e, and can be tuning apart from 377e for the 5th plasma tuning plates 361e being moved to 363e the 5th EM with respect to the 5th EM tuning part 375e of the 5th plasma tuning plug (370e, 375e) in an EM energy tuning space 369a.The 5th control assembly 360e and the 5th plasma tuning plates 361e can be for being optimized be coupled to the microwave energy of the 5th EM tuning part 375e of the 5th plasma tuning plug (370e, 375e) from the 5th EM coupling regime 362e.For example, between the 5th EM tuning part 375e that can be in the 2nd EM energy tuning space 369b and the 5th plasma tuning plates 361e, set up the 5th EM tuning apart from 377e, and the tuning distance 377 of the 5th EM ecan change to about 1mm from about 0.01mm.
The 5th plasma tuning plug (370e, 375e) can have the five diameter (d associated with it 1e), the 5th diameter (d 1e) can change to about 1mm from about 0.01mm.The 5th plasma tuning plates 361e can have the five diameter (D associated with it 1e), the 5th diameter (D 1e) can change to about 10mm from about 1mm.The 5th EM coupling regime 362e, the 5th control assembly 360e can have five x/ associated with it with the 5th plasma tuning plates 361e yplanar offset (x 1e), and the 5th x/y planar offset (x 1e) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 5th control assembly 360e can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1e).
Still with reference to figure 3A, the 6th plasma tuning plug (370f, 375f) can comprise dielectric material, and can there is the 6th plasma tuning part 370f, the 6th plasma tuning part 370f can extend in space 315 that the 6th plasma is tuning to be arrived and utilize (x apart from 371f to processing 2f) the 6th position that limits.For example, the 6th plasma is tuning can change to about 400mm from about 10mm apart from 371f.
In the 2nd EM energy tuning space 369b that can set up in the second chamber assembly 368b, the 6th EM coupling regime 362f is based upon with the first chamber wall 365b at a distance of the 6th EM coupling distance 376f place, and the 6th EM tuning part 375f can extend in the 6th EM coupling regime 362f.The 6th EM tuning part 375f can obtain the 6th microwave energy from the 6th EM coupling regime 362f, and the 6th microwave energy can utilize the 6th plasma tuning part 370f and be sent to the 6th position (x that processes space 315 2f) locate.The 6th EM coupling regime 362f can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 6th EM coupling distance 376f can change to about 10mm from about 0.01mm, and the 6th EM coupling distance 376f can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The 6th plasma tuning plates 361f can comprise dielectric material, and can be coupled to the 6th control assembly 360f, and can be tuning apart from 377f for the 6th plasma tuning plates 361f being moved to 363f the 6th EM with respect to the 6th EM tuning part 375f of the 6th plasma tuning plug (370f, 375f) in the 2nd EM energy tuning space 369b.The 6th control assembly 360f and the 6th plasma tuning plates 361f can be for being optimized be coupled to the microwave energy of the 6th EM tuning part 375f of the 6th plasma tuning plug (370f, 375f) from the 6th EM coupling regime 362f.For example, between the 6th EM tuning part 375f that can be in the 2nd EM energy tuning space 369b and the 6th plasma tuning plates 361f, set up the 6th EM tuning apart from 377f, and the 6th EM is tuning, apart from 377f, can change to about 1mm from about 0.01mm.
The 6th plasma tuning plug (370f, 375f) can have the six diameter (d associated with it 1f), the 6th diameter (d 1f) can change to about 1mm from about 0.01mm.The 6th plasma tuning plates 361f can have the six diameter (D associated with it 1f), the 6th diameter (D 1f) can change to about 10mm from about 1mm.The 6th EM coupling regime 362f, the 6th control assembly 360f can have the six x/y planar offset (x associated with it with the 6th plasma tuning plates 361f 1f), and the 6th x/y planar offset (x 1f) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 6th control assembly 360f can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1f).
The top view of the 3rd microwave processing system 300 comprises the top view of the first chamber control assembly 345a, and the top view of the first chamber control assembly 345a is shown as the top view that is coupled to the first chamber tuning plates 346a.The first chamber control assembly 345a can comprise dielectric material, and can have the first diameter (d associated with it 1aa), and the first diameter (d 1aa) can change to about 1mm from about 0.01mm.The first chamber tuning plates 346a can comprise dielectric material, and can have the Second bobbin diameter (D associated with it 1aa), and Second bobbin diameter (D 1aa) can change to about 10mm from about 1mm.The first chamber control assembly 345a can have an x/y planar offset (y associated with it with the first chamber tuning plates 346a 1aa), and an x/y planar offset (y 1aa) can change to about 10mm from about 1mm.
In addition, the top view of the 3rd microwave processing system 300 comprises the top view of the second chamber control assembly 345b, and the top view of the second chamber control assembly 345b is shown as the top view that is coupled to the second chamber tuning plates 346b.The second chamber control assembly 345b can comprise dielectric material, and can have the first additional diameter (d associated with it 1ba), and the first additional diameter (d 1ba) can change to about 1mm from about 0.01mm.The second chamber tuning plates 346b can comprise dielectric material, and can have the second additional diameter (D associated with it 1ba), and the second additional diameter (D 1ba) can change to about 10mm from about 1mm.The second chamber control assembly 345b can have the two x/y planar offset (y associated with it with the second chamber tuning plates 346b 1ba), and the 2nd x/y planar offset (y 1ba) can change to about 10mm from about 1mm.
Fig. 3 B shows the biopsy cavity marker devices front view of the 3rd process chamber 310 in the 3rd microwave processing system 300.Front view shows each other the x/z plan view of a plurality of additional wall 312 of be coupled (the biopsy cavity marker devices front view that generates thus the processing space 315 in the 3rd process chamber 310).The 3rd microwave processing system 300 can be configured to form uniform plasma in processing space 315.
Front view shows the Section View of the first chamber assembly 368a therein with an EM energy tuning space 369a, and the first chamber assembly 368a can comprise the first chamber wall 365a, the second chamber wall 366a, at least one the 3rd chamber wall 367a and one or more additional chamber wall (not shown).For example, the first chamber assembly 368a can utilize the first chamber wall 365a to be coupled to first interface assembly 312a.Front view also shows the Section View of the second chamber assembly 368b therein with the 2nd EM energy tuning space 369b, and the second chamber assembly 368b can comprise the first chamber wall 365b, the second chamber wall 366b, at least one the 3rd chamber wall 367b and one or more additional chamber wall (not shown).For example, the second chamber assembly 368b can utilize the first chamber wall 365b to be coupled to the second interface module 312b.
The partial elevation view (dashed-line view) of the first plasma tuning plug group (370a-370c) has been shown, the partial elevation view (dotted line view) of the partial elevation view (dashed-line view) of the first plasma tuning plates group (361a-361c), the second plasma tuning plug group (370d-370f) and the partial elevation view (dotted line view) of the second plasma tuning plates group (361d-361f) in Fig. 3 B.
The first plasma tuning plug group (370a-370c) can have an x/y planar offset group (x associated with it with the first plasma tuning plates group (361a-361c) 2a-c), and an x/y planar offset group (x 2a-c) can change to about 100mm from about 10mm.The first plasma tuning plug group (370a-370c) can have an x/z planar offset group (z associated with it with the first plasma tuning plates group (361a-361c) 1a-c), and an x/z planar offset group (z 1a-c) can change to about 400mm from about 100mm.
The second plasma tuning plug group (370d-370f) can have the two x/y planar offset group (x associated with it with the second plasma tuning plates group (361d-361f) 2d-f), and the 2nd x/y planar offset group (x 2d-f) can change to about 100mm from about 10mm.The second plasma tuning plug group (370d-370f) can have the two x/z planar offset group (z associated with it with the second plasma tuning plates group (361d-361f) 1d-f), the 2nd x/z planar offset group (z 1d-f) can change to about 400mm from about 100mm.
Fig. 3 B shows the 3rd microwave processing system 300 and can comprise and be coupled to locular wall 312 to obtain one or more plasma sensors 306 of the first plasma data.In addition, the 3rd microwave processing system 300 can be configured to process the substrate of 200mm, the substrate of 300mm or larger sized substrate.In addition, can be configured separately with chamber rectangle columniform, square, so that the 3rd microwave processing system 300 can be configured to substrate, wafer or the LCD of circular, square or rectangle process and no matter their size what kind of is, as skilled in the art will appreciate.Therefore,, although will describe each aspect of the present invention in conjunction with the processing of semiconductor chip, the present invention is not limited only to this.
As shown in Figure 3 B, an EM source 350a can be coupled to the first chamber assembly 368a, and the 2nd EM source 350b can be coupled to the second chamber assembly 368b.The one EM source 350a can be coupled to the first matching network 352a, and the first matching network 352a can be coupled to the first coupling network 354a.The 2nd EM source 350b can be coupled to the second matching network 352b, and the second matching network 352b can be coupled to the second coupling network 354b.Alternatively, can use a plurality of matching network (not shown) or a plurality of coupling network (not shown).
The first coupling network 354a can be coupled to the first chamber assembly 368a removably, and the first chamber assembly 368a can be coupled to the top of the first interface assembly 312a of process chamber 310 removably.The first coupling network 354a can provide microwave energy for the EM energy tuning space 369a in the first chamber assembly 368a.The second coupling network 354b can be coupled to the second chamber assembly 368b removably, and the second chamber assembly 368b can be coupled to the top of the second interface module 312b of process chamber 310 removably.The second coupling network 354b can provide additional microwave energy for the 2nd EM energy tuning space 369b in the second chamber assembly 368b.Alternatively, can use other EM coupled structures.
As shown in Figure 3 B, controller 395 can be coupled 396 to EM sources (350a, 350b), matching network (352a, 352b), coupling network (354a, 354b) and chamber assembly (368a, 368b), and controller 395 can utilize technical recipe to set up, control and optimize EM source (350a, 350b), matching network (352a, 352b), coupling network (354a, 354b) and chamber assembly (368a, 368b), to control the plasma uniformity of processing in space 315.For example, EM source (350a, 350b) can be in the frequency work from about 500MHz to about 5000MHz.In addition, controller 395 can be coupled 396 to plasma sensor 306 and processes sensor 307, and controller 395 can utilize technical recipe to set up, control and optimize the data from plasma sensor 306 and processes sensor 307, to control the plasma uniformity of processing in space 315.
In addition, controller 395 can be coupled 396 to gas supply system 340, is coupled to gas supply sub-component 341 and is coupled to gas tip 343.For example, gas supply system 340, gas supply sub-component 341 and gas tip 343 can be configured to that one or more are processed to gas and cause processing space 315, and can comprise flow control and/or flow measurement device.
During dry plasma etch, process gas and can comprise etchant, passivator or inert gas or the wherein combination of two or more.For example,, when plasma etching is such as silica (SiO x) or silicon nitride (Si xn y) dielectric film time, plasma etching gas composition generally includes such as C 4f 8, C 5f 8, C 3f 6, C 4f 6, CF 4deng at least one the fluorine-based chemical composition (C of carbon xf y), and/or can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z), and can there is inert gas, oxygen, CO or CO 2in at least one.In addition, for example, when etching polysilicon (polysilicon), plasma etching gas composition generally includes such as HBr, Cl 2, NF 3, or SF 6, or the halogen-containing gas of the combination of two or more wherein, and can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z) and inert gas, oxygen, CO or CO 2in at least one or wherein two or more.During plasma enhanced deposition, process gas and can comprise into film precursor, reducibility gas or inert gas or the wherein combination of two or more.
As shown in Figure 3 B, the 3rd microwave processing system 300 can comprise port 391 and the control pressurer system 390 that is coupled to process chamber 310, and is configured to emptying process chamber 310, and controls the pressure in process chamber 310.In addition, the 3rd microwave processing system 300 can comprise the substrate holder 320 of processing space 315 for substrate 305 is arranged on.
The front view of the 3rd microwave processing system 300 comprises the partial elevation view of the first chamber control assembly 345a, and the partial elevation view of the first chamber control assembly 345a is shown as the front view that is coupled to the first chamber tuning plates 346a.The first chamber control assembly 345a can have an x/z planar offset (z associated with it with the first chamber tuning plates 346a 1aa), and an x/z planar offset (z 1aa) can change to about 10mm from about 1mm.
The first chamber control assembly 345a can be humorous apart from 348a for the first chamber tuning plates 346a being moved to 347a intonation in an EM energy tuning space 369a.Controller 395 can be coupled 396 to chamber control assembly 345a, and controller 395 can utilize technical recipe to set up, control and to optimize intonation humorous apart from 348a, to control in real time and to maintain the plasma uniformity of processing in space 315.For example, intonation is humorous can change to about 10mm from about 0.01mm apart from 348a, and intonation humorous apart from 348a can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
In addition, the front view of the 3rd microwave processing system 300 comprises the partial elevation view of the second chamber control assembly 345b, and the partial elevation view of the second chamber control assembly 345b is shown as the front view that is coupled to the second chamber tuning plates 346b.The second chamber control assembly 345b can have the two x/z planar offset (z associated with it with the second chamber tuning plates 346b 1ba), and the 2nd x/z planar offset (z 1ba) can change to about 10mm from about 1mm.
The second chamber control assembly 345b can be humorous apart from 348b for the second chamber tuning plates 346b being moved to 347b the second intonation in the 2nd EM energy tuning space 369b.Controller 395 396 to the second chamber control assembly 345b that can be coupled, and controller 395 can utilize technical recipe to set up, control and to optimize the second intonation humorous apart from 348b, to control in real time and to maintain the plasma uniformity of processing in space 315.For example, the second intonation is humorous can change to about 10mm from about 0.01mm apart from 348b, and the second intonation humorous apart from 348b can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
Fig. 3 C shows the side view in partial cross-section of the 3rd process chamber 310 in the 3rd microwave processing system 300.End view shows and is coupled to first interface assembly 312a and is coupled to the side view in partial cross-section that the second interface module 312b(generates the processing space 315 in process chamber 310 thus) a plurality of locular walls 312 y/ z-plane view.The 3rd microwave processing system 300 can be configured to form uniform plasma in processing space 315.
The partial side view of an EM energy tuning space 369a in the first chamber assembly 368a and the partial side view of the 2nd EM energy tuning space 369b in the second chamber assembly 368b have been shown in Fig. 3 C.The partial side view of the first plasma tuning plug group (370a-370c) has been shown, the partial side view of the partial side view of the first plasma tuning plates group (361a-361c), the second plasma tuning plug group (370d-370f) and the partial side view of the second plasma tuning plates group (361d-361f) in Fig. 3 C.
In Fig. 3 C, also show the end view of the first barrier assembly group (364a, 364b and 364c) and the second barrier assembly group (364d, 364e and 364f).For example, the first barrier assembly group (364a, 364b and 364c) can be for being coupled to first interface assembly 312a by the first plasma tuning plug group { (370a, 370b and 370c) and (375a, 375b and 375c) } removably.Each in the first barrier assembly group (364a, 364b and 364c) can be coupled to first interface assembly 312a removably.In addition, the second barrier assembly group (364d, 364e and 364f) can be for being coupled to the second interface module 312b by the second plasma tuning plug group { (370d, 370e and 370f) and (375d, 375e and 375f) } removably.Each in the second barrier assembly group (364d, 364e and 364f) can be coupled to the second interface module 312b removably.
As shown in Figure 3 C, the first plasma tuning plates group (361a, 361b and 361c) can be coupled to the first control assembly group (360a, 360b and 360c), and the first control assembly group (360a, 360b and 360c) can be for tuning apart from group (377a, 377b and 377c) with respect to mobile (363a, 363b and the 363c) EM of EM tuning part (375a, 375b and 375c) by the first plasma tuning plates group (361a, 361b and 361c) in an EM energy tuning space 369a.In addition, the second plasma tuning plates group (361d, 361e and 361f) can be coupled to the second control assembly group (360d, 360e and 360f), and the second control assembly group (360d, 360e and 360f) can be for tuning apart from group (377d, 377e and 377f) with respect to mobile (363d, 363e and 363f) the 2nd EM of EM tuning part (375d, 375e and 375f) by the second plasma tuning plates group (361d, 361e and 361f) in the 2nd EM energy tuning space 369b.
The first control assembly group (360a, 360b and 360c) can be coupled 396 to controller 395, and controller 395 can utilize technical recipe to set up, control and it is tuning apart from group (377a, 377b and 377c) to optimize an EM, to control the plasma uniformity of processing in space 315.In addition, the second control assembly group (360d, 360e and 360f) can be coupled 396 to controller 395, and controller 395 can utilize technical recipe to set up, control and it is tuning apart from group (377d, 377e and 377f) to optimize the 2nd EM, to control the plasma uniformity of processing in space 315.
Controller 395 can be coupled 396 to EM sources (350a, 350b), matching network (352a, 352b), coupling network (354a, 354b) and chamber assembly (368a, 368b), and controller 395 can utilize technical recipe to set up, control and optimize EM source (350a, 350b), matching network (352a, 352b), coupling network (354a, 354b) and chamber assembly (368a, 368b), to control the plasma uniformity of processing in space 315.For example, EM source (350a, 350b) can be in the frequency work from about 500MHz to about 5000MHz.In addition, controller 395 can be coupled 396 to plasma sensor 306, processes sensor 307 and cavity sensor (308a and 308b), and controller 395 can utilize technical recipe to set up, control and optimize the data from plasma sensor 306, processes sensor 307 and cavity sensor (308a and 308b), to control the plasma uniformity of processing in space 315.
End view shows process chamber 310, and process chamber 310 has overall width (y associated with it in y/z plane t) and total height (z t).Overall width (y t) can change to about 500mm from about 50mm, and total height (z t) can change to about 500mm from about 50mm.
Fig. 4 A shows the biopsy cavity marker devices top view of the 4th process chamber 410 in the 4th microwave processing system 400.Top view shows first interface assembly 412a, the second interface module 412b and is coupled to first interface assembly 412a and the second interface module 412b and form thus the x/y plan view of a plurality of additional locular wall 412 of the 4th process chamber 410.For example, locular wall 412 can have the wall thickness associated with it (t), and wall thickness (t) can change to about 5mm from about 1mm.First interface assembly 412a can have the first interface thickness (t associated with it i1), and first interface thickness (t i1) can change to about 10mm from about 1mm.The second interface module 412b can have the second interface thickness (t associated with it i2), and the second interface thickness (t i2) can change to about 10mm from about 1mm.Process space 415 and can there is the length (x associated with it t), and length (x t) can change to about 500mm from about 10mm.
The top view of the 4th microwave processing system 400 shows the Section View of the first chamber assembly 468a therein with an EM energy tuning space 469a, and the first chamber assembly 468a can comprise the first chamber wall 465a, the second chamber wall 466a, at least one the 3rd chamber wall 467a and one or more additional chamber wall (not shown).For example, the first chamber assembly 468a can utilize the first chamber wall 465a to be coupled to first interface assembly 412a, and wall (465a, 466a and 467a) can comprise dielectric material and can have the wall thickness (t associated with it a), and wall thickness (t a) can change to about 5mm from about 1mm.In addition, an EM energy tuning space 469a can have the first length (x associated with it t1a) and the first width (y 1a), the first length (x t1a) can change to about 500mm from about 10mm, and the first width (y 1a) can change to about 50mm from about 5mm.
The top view of the 4th microwave processing system 400 also shows the Section View of the second chamber assembly 468b therein with the 2nd EM energy tuning space 469b, and the second chamber assembly 468b can comprise the first chamber wall 465b, the second chamber wall 466b, at least one the 3rd chamber wall 467b and one or more additional chamber wall (not shown).For example, the second chamber assembly 468b can utilize the first chamber wall 465b to be coupled to the second interface module 412b, and wall (465b, 466b and 467b) can comprise dielectric material, also can have the wall thickness (t associated with it b), and wall thickness (t b) can change to about 5mm from about 1mm.In addition, the 2nd EM energy tuning space 469b can have the second length (x associated with it t1b) and the second width (y 1b), the second length (x t1b) can change to about 500mm from about 10mm, and the second width (y 1b) can change to about 50mm from about 5mm.
In some example system, the first barrier assembly group (464a and 464b) can be coupled to first interface assembly 412a removably, and can be configured to isolation processing space 415 and an EM energy tuning space 469a.The first barrier assembly group (464a and 464b) can be for being coupled to first interface assembly 412a by the first plasma tuning plug group { (470a and 470b) and (475a and 475b) } removably.For example, the first plasma tuning part group (470a and 470b) can be configured in to be processed in space 415, and an EM tuning part group (475a and 475b) can be configured in an EM energy tuning space 469a.
The second barrier assembly group (464c and 464d) can be coupled to the second interface module 412b removably, and can be configured to isolation processing space 415 and the 2nd EM energy tuning space 469b.The second barrier assembly group (464c and 464d) can be for being coupled to the second interface module 412b by the second plasma tuning plug group { (470c and 470d) and (475c and 475d) } removably.For example, the second plasma tuning part group (470c and 470d) can be configured in to be processed in space 415, and the 2nd EM tuning part group (475c and 475d) can be configured in the 2nd EM energy tuning space 469b.
Still with reference to figure 4A, the first plasma tuning plug (470a, 475a) can comprise dielectric material, and can there is the first plasma tuning part 470a, the first plasma tuning part 470a can extend in space 415 that the first plasma is tuning to be arrived and utilize (x apart from 471a to processing 2a) primary importance that limits.The first plasma is tuning can change to about 400mm from about 10mm apart from 471a.
In the one EM energy tuning space 469a that can set up in the first chamber assembly 468a, an EM coupling regime 462a is based upon with the first chamber wall 465a at a distance of an EM coupling distance 476a place, and an EM tuning part 475a can extend in an EM coupling regime 462a.The one EM tuning part 475a can obtain the first microwave energy from an EM coupling regime 462a, and the first microwave energy can utilize the first plasma tuning part 470a and be sent to the primary importance (x that processes space 415 2a) locate.The one EM coupling regime 462a can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, an EM coupling distance 476a can change to about 10mm from about 0.01mm, and an EM coupling distance 476a can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The first plasma tuning plates 461a can comprise dielectric material, can be coupled to the first control assembly 460a, and can be tuning apart from 477a for the first plasma tuning plates 461a being moved to 463a the one EM with respect to an EM tuning part 475a of the first plasma tuning plug (470a, 475a) in an EM energy tuning space 469a.The first control assembly 460a and the first plasma tuning plates 461a can be for being optimized be coupled to the microwave energy of an EM tuning part 475a of the first plasma tuning plug (470a, 475a) from an EM coupling regime 462a.For example, between an EM tuning part 475a that can be in an EM energy tuning space 469a and the first plasma tuning plates 461a, set up an EM tuning apart from 477a, and an EM is tuning, apart from 477a, can change to about 1mm from about 0.01mm.
The first plasma tuning plug (470a, 475a) can have the first diameter (d associated with it 1a), the first diameter (d 1a) can change to about 1mm from about 0.01mm.The first plasma tuning plates 461a can have the first diameter (D associated with it 1a), the first diameter (D 1a) can change to about 10mm from about 1mm.The one EM coupling regime 462a, the first control assembly 460a can have an x/y planar offset (x associated with it with the first plasma tuning plates 461a 1a), and an x/y planar offset (x 1a) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The first control assembly 460a can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1a).
The second plasma tuning plug (470b, 475b) can have the second plasma tuning part 470b, and the second plasma tuning part 470b can extend in space 415 that the second plasma is tuning to be arrived and utilize (x apart from 471b to processing 1b) second place that limits.For example, the second plasma is tuning can change to about 400mm from about 10mm apart from 471b.
In the one EM energy tuning space 469a that can set up in the first chamber assembly 468a, the 2nd EM coupling regime 462b is based upon with the first chamber wall 465a at a distance of the 2nd EM coupling distance 476b place, and the 2nd EM tuning part 475b can extend in the 2nd EM coupling regime 462b.The 2nd EM tuning part 475b can obtain the second microwave energy from the 2nd EM coupling regime 462b, and the second microwave energy can utilize the second plasma tuning part 470b and be sent to the second place (x that processes space 415 1b) locate.The 2nd EM coupling regime 462b can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 2nd EM coupling distance 476b can change to about 10mm from about 0.01mm, and the 2nd EM coupling distance 476b can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
The second plasma tuning plates 461b can comprise dielectric material, can be coupled to the second control assembly 460b, and can be tuning apart from 477b for the second plasma tuning plates 461b being moved to 463b the 2nd EM with respect to the 2nd EM tuning part 475b of the second plasma tuning plug (470b, 475b) in an EM energy tuning space 469a.The second control assembly 460b and the second plasma tuning plates 461b can be for being optimized be coupled to the microwave energy of the 2nd EM tuning part 475b of the second plasma tuning plug (470b, 475b) from the 2nd EM coupling regime 462b.For example, between the 2nd EM tuning part 475b that can be in an EM energy tuning space 469a and the second plasma tuning plates 461b, set up the 2nd EM tuning apart from 477b, and the 2nd EM is tuning, apart from 477b, can change to about 1mm from about 0.01mm.
The second plasma tuning plug (470b, 475b) can have the Second bobbin diameter (d associated with it 1b), Second bobbin diameter (d 1b) can change to about 1mm from about 0.01mm.The second plasma tuning plates 461b can have the Second bobbin diameter (D associated with it 1b), Second bobbin diameter (D 1b) can change to about 10mm from about 1mm.The 2nd EM coupling regime 462b, the second control assembly 460b can have the two x/y planar offset (x associated with it with the second plasma tuning plates 461b 1b), and the 2nd x/y planar offset (x 1b) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The second control assembly 460b can comprise dielectric material, and can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1b).
C grade gas ions tuning plug (470c, 475c) can comprise dielectric material, and can there is C grade gas ions tuning part 470c, C grade gas ions tuning part 470c can extend in space 415 that C grade gas ions is tuning to be arrived and utilize (x apart from 471c to processing 2c) the 3rd position that limits.For example, C grade gas ions is tuning can change to about 400mm from about 10mm apart from 471c.
In the 2nd EM energy tuning space 469b that can set up in the second chamber assembly 468b, the 3rd EM coupling regime 462c is based upon with the first chamber wall 465a at a distance of the 3rd EM coupling distance 476c place, and the 3rd EM tuning part 475c can extend in the 3rd EM coupling regime 462c.The 3rd EM tuning part 475c can obtain the 3rd microwave energy from the 3rd EM coupling regime 462c, and the 3rd microwave energy can utilize C grade gas ions tuning part 470c and be sent to the 3rd position (x that processes space 415 2c) locate.The 3rd EM coupling regime 462c can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 3rd EM coupling distance 476c can change to about 10mm from about 0.01mm, and the 3rd EM coupling distance 476c can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
C grade gas ions tuning plates 461c can comprise dielectric material, can be coupled to the 3rd control assembly 460c, and can be tuning apart from 477c for C grade gas ions tuning plates 461c being moved to 463c the 3rd EM with respect to the 3rd EM tuning part 475c of C grade gas ions tuning plug (470c, 475c) in the 2nd EM energy tuning space 469b.The 3rd control assembly 460c and C grade gas ions tuning plates 461c can be for being optimized be coupled to the microwave energy of the 3rd EM tuning part 475c of C grade gas ions tuning plug (470c, 475c) from the 3rd EM coupling regime 462c.For example, between the 3rd EM tuning part 475c that can be in the 2nd EM energy tuning space 469b and C grade gas ions tuning plates 461c, set up the 3rd EM tuning apart from 477c, and the 3rd EM is tuning, apart from 477c, can change to about 1mm from about 0.01mm.
C grade gas ions tuning plug (470c, 475c) can have the three diameter (d associated with it 1c), the 3rd diameter (d 1c) can change to about 1mm from about 0.01mm.C grade gas ions tuning plates 461c can have the three diameter (D associated with it 1c), the 3rd diameter (D 1c) can change to about 10mm from about 1mm.The 3rd EM coupling regime 462c, the 3rd control assembly 460c can have the three x/y planar offset (x associated with it with C grade gas ions tuning plates 461c 1c), and the 3rd x/y planar offset (x 1c) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 3rd control assembly 460c can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1c).
Fourth class gas ions tuning plug (470d, 475d) can comprise dielectric material, and can there is fourth class gas ions tuning part 470d, fourth class gas ions tuning part 470d can extend in space 415 that fourth class gas ions is tuning to be arrived and utilize (x apart from 471d to processing 2d) the 4th position that limits.For example, fourth class gas ions is tuning can change to about 400mm from about 10mm apart from 471d.
In the 2nd EM energy tuning space 469b that can set up in the second chamber assembly 468b, the 4th EM coupling regime 462d is based upon with the first chamber wall 465a at a distance of the 4th EM coupling distance 476d place, and the 4th EM tuning part 475d can extend in the 4th EM coupling regime 462d.The 4th EM tuning part 475d can obtain the 4th microwave energy from the 4th EM coupling regime 462d, and the 4th microwave energy can utilize fourth class gas ions tuning part 470d and be sent to the 4th position (x that processes space 415 2d) locate.The 4th EM coupling regime 462d can comprise maximum field region, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.For example, the 4th EM coupling distance 476d can change to about 10mm from about 0.01mm, and the 4th EM coupling distance 476d can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
Fourth class gas ions tuning plates 461d can comprise dielectric material, can be coupled to the 4th control assembly 460d, and can be tuning apart from 477d for fourth class gas ions tuning plates 461d being moved to 463d the 4th EM with respect to the 4th EM tuning part 475d of fourth class gas ions tuning plug (470d, 475d) in the 2nd EM energy tuning space 469b.The 4th control assembly 460d and fourth class gas ions tuning plates 461d can be for being optimized be coupled to the microwave energy of the 4th EM tuning part 475d of fourth class gas ions tuning plug (470d, 475d) from the 4th EM coupling regime 462d.For example, between the 4th EM tuning part 475d that can be in the 2nd EM energy tuning space 469b and fourth class gas ions tuning plates 461d, set up the 4th EM tuning apart from 477d, and the 4th EM is tuning, apart from 477d, can change to about 1mm from about 0.01mm.
Fourth class gas ions tuning plug (470d, 475d) can have the four diameter (d associated with it 1d), the 4th diameter (d 1d) can change to about 1mm from about 0.01mm.Fourth class gas ions tuning plates 461d can have the four diameter (D associated with it 1d), the 4th diameter (D 1d) can change to about 10mm from about 1mm.The 4th EM coupling regime 462d, the 4th control assembly 460d can have the four x/y planar offset (x associated with it with fourth class gas ions tuning plates 461d 1d), and the 4th x/y planar offset (x 1d) can be rely on wavelength and can change to approximately from about quarter-wave (λ/4) (10 λ).The 4th control assembly 460d can comprise dielectric material, can have cylindrical structural and can change to from about 1mm the diameter (d of about 5mm 1d).
The top view of the 4th microwave processing system 400 comprises the top view of the first chamber control assembly 445a, and the top view of the first chamber control assembly 445a is shown as the top view that is coupled to the first chamber tuning plates 446a.The first chamber control assembly 445a can comprise dielectric material, and can have the first diameter (d associated with it 1aa), and the first diameter (d 1aa) can change to about 1mm from about 0.01mm.The first chamber tuning plates 446a can comprise dielectric material, and can have the Second bobbin diameter (D associated with it 1aa), and Second bobbin diameter (D 1aa) can change to about 10mm from about 1mm.The first chamber control assembly 445a can have an x/y planar offset (y associated with it with the first chamber tuning plates 446a 1aa), and an x/y planar offset (y 1aa) can change to about 10mm from about 1mm.
In addition, the top view of the 4th microwave processing system 400 comprises the top view of the second chamber control assembly 445b, and the top view of the second chamber control assembly 445b is illustrated the top view that is coupled to the second chamber tuning plates 446b.The second chamber control assembly 445b can comprise dielectric material, and can have the first additional diameter (d associated with it 1ba), and the first additional diameter (d 1ba) can change to about 1mm from about 0.01mm.The second chamber tuning plates 446b can comprise dielectric material, and can have the second additional diameter (D associated with it 1ba), and the second additional diameter (D 1ba) can change to about 10mm from about 1mm.The second chamber control assembly 445b can have the two x/y planar offset (y associated with it with the second chamber tuning plates 446b 1ba), and the 2nd x/y planar offset (y 1ba) can change to about 10mm from about 1mm.
Fig. 4 B shows the biopsy cavity marker devices front view of the 4th process chamber 410 in the 4th microwave processing system 400.The x/z plan view of a plurality of additional wall 412 that front view shows (generating thus the biopsy cavity marker devices front view in the processing space 415 in the 4th process chamber 410) coupled to each other.The 4th microwave processing system 400 can be configured to form plasma in processing space 415.
Front view shows the Section View of the first chamber assembly 468a therein with an EM energy tuning space 469a, and the first chamber assembly 468a can comprise the first chamber wall 465a, the second chamber wall 466a, at least one the 3rd chamber wall 467a and one or more additional chamber wall (not shown).For example, the first chamber assembly 468a can utilize the first chamber wall 465a to be coupled to first interface assembly 412a.Front view also shows the Section View of the second chamber assembly 468b therein with the 2nd EM energy tuning space 469b, and the second chamber assembly 468b can comprise the first chamber wall 465b, the second chamber wall 466b, at least one the 3rd chamber wall 467b and one or more additional chamber wall (not shown).For example, the second chamber assembly 468b can utilize the first chamber wall 465b to be coupled to the second interface module 412b.
The partial elevation view (dashed-line view) of the first plasma tuning plug group (470a and 470b) has been shown, the partial elevation view (dotted line view) of the partial elevation view (dashed-line view) of the first plasma tuning plates group (461a and 461b), the second plasma tuning plug group (470c and 470d) and the partial elevation view (dotted line view) of the second plasma tuning plates group (461c and 461d) in Fig. 4 B.
The first plasma tuning plug group (470a and 470b) can have an x/y planar offset group (x associated with it with the first plasma tuning plates group (461a and 461b) 2a-b), an x/y planar offset group (x 2a-b) can change to about 100mm from about 10mm.The first plasma tuning plug group (470a and 470b) can have an x/z planar offset group (z associated with it with the first plasma tuning plates group (461a and 461b) 1a-b), and an x/z planar offset group (z 1a-b) can change to about 400mm from about 100mm.
The second plasma tuning plug group (470c and 470d) can have the two x/y planar offset group (x associated with it with the second plasma tuning plates group (461c and 461d) 2c-d), and the 2nd x/y planar offset group (x 2c-d) can change to about 100mm from about 10mm.The second plasma tuning plug group (470c and 470d) can have the two x/z planar offset group (z associated with it with the second plasma tuning plates group (461c and 461d) 1c-d), and the 2nd x/z planar offset group (z 1c-d) can change to about 400mm from about 100mm.
Fig. 4 B shows the 4th microwave processing system 400 can comprise one or more plasma sensors 406, and one or more plasma sensors 406 are coupled to locular wall 412 to obtain the first plasma data.In addition, the 4th microwave processing system 400 can be configured to process the substrate of 200mm, the substrate of 300mm or larger sized substrate.In addition, can be configured separately with chamber rectangle columniform, square, so that the 4th microwave processing system 400 can be configured to, substrate, wafer or the LCD of circular, square or rectangle are processed and no matter what kind of their size is, as skilled in the art will appreciate.Therefore,, although will describe each aspect of the present invention in conjunction with the processing of semiconductor chip, the present invention is not limited only to this.
As shown in Figure 4 B, an EM source 450a can be coupled to the first chamber assembly 468a, and the 2nd EM source 450b can be coupled to the second chamber assembly 468b.The one EM source 450a can be coupled to the first matching network 452a, and the first matching network 452a can be coupled to the first coupling network 454a.The 2nd EM source 450b can be coupled to the second matching network 452b, and the second matching network 452b can be coupled to the second coupling network 454b.Alternatively, can use a plurality of matching network (not shown) or a plurality of coupling network (not shown).
The first coupling network 454a can be coupled to the first chamber assembly 468a removably, and the first chamber assembly 468a can be coupled to the top of the first interface assembly 412a of process chamber 410 removably.The first coupling network 454a can provide microwave energy for the EM energy tuning space 469a in the first chamber assembly 468a.The second coupling network 454b can be coupled to the second chamber assembly 468b removably, and the second chamber assembly 468b can be coupled to the top of the second interface module 412b of process chamber 410 removably.The second coupling network 454b can provide additional microwave energy for the 2nd EM energy tuning space 469b in the second chamber assembly 468b.Alternatively, can use other EM coupled structures.
As shown in Figure 4 B, controller 495 can be coupled 496 to EM sources (450a, 450b), matching network (452a, 452b), coupling network (454a, 454b) and chamber assembly (468a, 468b), and controller 495 can utilize technical recipe to set up, control and optimize EM source (450a, 450b), matching network (452a, 452b), coupling network (454a, 454b) and chamber assembly (468a, 468b), to control the plasma uniformity of processing in space 415.For example, EM source (450a, 450b) can be in the frequency work from about 500MHz to about 5000MHz.In addition, controller 495 can be coupled 496 to plasma sensor 406 and processes sensor 407, and controller 495 can utilize technical recipe to set up, control and optimize the data from plasma sensor 406 and processes sensor 407, to control the plasma uniformity of processing in space 415.
In addition, controller 495 can be coupled 496 to gas supply system 440, is coupled to gas supply sub-component 441 and is coupled to gas tip 443.For example, gas supply system 440, gas supply sub-component 441 and gas tip 443 can be configured to that one or more are processed to gas and cause processing space 415, and can comprise flow control and/or flow measurement device.
During dry plasma etch, process gas and can comprise etchant, passivator or inert gas or the wherein combination of two or more.For example,, when plasma etching is such as silica (SiO x) or silicon nitride (Si xn y) dielectric film time, plasma etching gas composition generally includes such as C 4f 8, C 5f 8, C 3f 6, C 4f 6, CF 4deng at least one the fluorine-based chemical composition (C of carbon xf y), and/or can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z), and can there is inert gas, oxygen, CO or CO 2in at least one.In addition, for example, when etching polysilicon (polycrystalline silicon, polysilicon), plasma etching gas composition generally includes such as HBr, Cl 2, NF 3, or SF 6, or the halogen-containing gas of the combination of two or more wherein, and can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z) and inert gas, oxygen, CO or CO 2in at least one or wherein two or more.During plasma enhanced deposition, process gas and can comprise into film precursor, reducibility gas or inert gas or the wherein combination of two or more.
As shown in Figure 4 B, the 4th microwave processing system 400 can comprise port 491 and the control pressurer system 490 that is coupled to process chamber 410, and is configured to emptying process chamber 410, and controls the pressure in process chamber 410.In addition, the 4th microwave processing system 400 can comprise the substrate holder 420 of processing space 415 for substrate 405 is arranged on.
The front view of the 4th microwave processing system 400 comprises the partial elevation view of the first chamber control assembly 445a, and the partial elevation view of the first chamber control assembly 445a is shown as the front view that is coupled to the first chamber tuning plates 446a.The first chamber control assembly 445a can have an x/z planar offset (z associated with it with the first chamber tuning plates 446a 1aa), and an x/z planar offset (z 1aa) can change to about 10mm from about 1mm.
The first chamber control assembly 445a can be humorous apart from 448a for the first chamber tuning plates 446a being moved to 447a the 4th intonation in an EM energy tuning space 469a.Controller 495 496 to the first chamber control assembly 445a that can be coupled, and controller 495 can utilize technical recipe to set up, control and to optimize the 4th intonation humorous apart from 448a, to control in real time and to maintain the plasma uniformity of processing in space 415.For example, the 4th intonation is humorous can change to about 10mm from about 0.01mm apart from 448a, and the 4th intonation humorous apart from 448a can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
In addition, the front view of the 4th microwave processing system 400 comprises the partial elevation view of the second chamber control assembly 445b, and the partial elevation view of the second chamber control assembly 445b is shown as the front view that is coupled to the second chamber tuning plates 446b.The second chamber control assembly 445b can have the two x/z planar offset (z associated with it with the second chamber tuning plates 446b 1ba), the 2nd x/z planar offset (z 1ba) can change to about 10mm from about 1mm.
The second chamber control assembly 445b can be humorous apart from 448b for the second chamber tuning plates 446b being moved to 447b the second intonation in the 2nd EM energy tuning space 469b.Controller 495 can be coupled to the second chamber control assembly 445b, and controller 495 can utilize technical recipe to set up, control and to optimize the second intonation humorous apart from 448b, to control in real time and to maintain the plasma uniformity of processing in space 415.For example, the second intonation is humorous can change to about 10mm from about 0.01mm apart from 448b, and the second intonation humorous apart from 448b can be rely on wavelength and can change to approximately (10 λ) from approximately (λ/4).
Fig. 4 C shows the side view in partial cross-section of the 4th process chamber 410 in the 4th microwave processing system 400.End view shows and is coupled to first interface assembly 412a and is coupled to the side view in partial cross-section that the second interface module 412b(generates the processing space 415 in process chamber 410 thus) the y/z plan view of a plurality of locular walls 412.The 4th microwave processing system 400 can be configured to form plasma in processing space 415.
The partial side view of an EM energy tuning space 469a in the first chamber assembly 468a and the partial side view of the 2nd EM energy tuning space 469b in the second chamber assembly 468b have been shown in Fig. 4 C.The partial side view of the first plasma tuning plug group (470a and 470b) has been shown, the partial side view of the partial side view of the first plasma tuning plates group (461a and 461b), the second plasma tuning plug group (470c and 470d) and the partial side view of the second plasma tuning plates group (461c and 461d) in Fig. 4 C.
In Fig. 4 C, also show the end view of the first barrier assembly group (464a and 464b) and the second barrier assembly group (464c and 464d).For example, the first barrier assembly group (464a and 464b) can be for being coupled to first interface assembly 412a by the first plasma tuning plug group { (470a and 470b) and (475a and 475b) } removably.Each in the first barrier assembly group (464a and 464b) can be coupled to first interface assembly 412a removably.In addition, the second barrier assembly group (464c and 464d) can be for being coupled to the second interface module 412b by the second plasma tuning plug group { (470c and 470d) and (475c and 475d) } removably.Each in the second barrier assembly group (464c and 464d) can be coupled to the second interface module 412b removably.
As shown in Figure 4 C, the first plasma tuning plates group (461a and 461b) can be coupled to the first control assembly group (460a and 460b), and the first control assembly group (460a and 460b) can be for tuning apart from group (477a and 477b) with respect to mobile (463a and the 463b) EM of EM tuning part (475a and 475b) by the first plasma tuning plates group (461a and 461b) in an EM energy tuning space 469a.In addition, the second plasma tuning plates group (461c and 461d) can be coupled to the second control assembly group (460c and 460d), and the second control assembly group (460c and 460d) can be for tuning apart from group (477c and 477d) with respect to mobile (463c and 463d) the 2nd EM of EM tuning part (475c and 475d) by the second plasma tuning plates group (461c and 461d) in the 2nd EM energy tuning space 469b.
The first control assembly group (460a and 460b) can be coupled 496 to controller 495, and controller 495 can utilize technical recipe to set up, control and it is tuning apart from group (477a and 477b) to optimize an EM, to control the plasma uniformity of processing in space 415.In addition, the second control assembly group (460c and 460d) can be coupled to controller 495, and controller 495 can utilize technical recipe to set up, control and it is tuning apart from group (477c and 477d) to optimize the 2nd EM, to control the plasma uniformity of processing in space 415.
Controller 495 can be coupled 496 to EM sources (450a, 450b), matching network (452a, 452b), coupling network (454a, 454b) and chamber assembly (468a, 468b), and controller 495 can utilize technical recipe to set up, control and optimize EM source (450a, 450b), matching network (452a, 452b), coupling network (454a, 454b) and chamber assembly (468a, 468b), to control the plasma uniformity of processing in space 415.For example, EM source (450a, 450b) can be in the frequency work from about 500MHz to about 5000MHz.In addition, controller 495 can be coupled 496 to plasma sensor 406, processes sensor 407 and cavity sensor (408a and 408b), and controller 495 can utilize technical recipe to set up, control and optimize the data from plasma sensor 406, processes sensor 407 and cavity sensor (408a and 408b), to control the plasma uniformity of processing in space 415.
End view shows process chamber 410, and process chamber 410 has overall width (y associated with it in y/z plane t) and total height (z t).For example, overall width (y t) can change to about 500mm from about 50mm, and total height (z t) can change to about 500mm from about 50mm.
Fig. 5 A-5D shows the different views of exemplary plasma tuning plug according to an embodiment of the invention.Fig. 5 A shows front view and the end view of the first exemplary plasma tuning plug (570a, 575a).The first plasma tuning part 570a can have the first length (y associated with it 11), and the first length (y 11) can change to about 400mm from about 1mm.The one EM tuning part 575a can have the length (y associated with it 12), and length (y 12) can change to about 400mm from about 1mm.The first plasma tuning part 570a can have the first height (x associated with it with an EM tuning part 575a 1), and the first height (x 1) can change to about 10mm from about 0.1mm.The first plasma tuning part 570a can have the first width (z associated with it with an EM tuning part 575a 1), and the first width (z 1) can change to about 10mm from about 0.1mm.
Fig. 5 B shows front view and the end view of the second exemplary plasma tuning plug (570b, 575b).The second plasma tuning part 570b can have the first length (y associated with it 21), and the first length (y 21) can change to about 400mm from about 1mm.The 2nd EM tuning part 575b can have the length (y associated with it 22), and length (y 22) can change to about 400mm from about 1mm.The second plasma tuning part 570b can have the second height (x associated with it with the 2nd EM tuning part 575b 2), and the second height (x 2) can change to about 10mm from about 0.1mm.The second plasma tuning part 570b can have the second width (z associated with it with the 2nd EM tuning part 575b 2), and the second width (z 2) can change to about 10mm from about 0.1mm.
Fig. 5 C shows front view and the end view of the 3rd exemplary plasma tuning plug (570c, 575c).C grade gas ions tuning part 570c can have the three length (y associated with it 31), and the 3rd length (y 31) can change to about 400mm from about 1mm.The 3rd EM tuning part 575c can have the length (y associated with it 32), and length (y 32) can change to about 400mm from about 1mm.C grade gas ions tuning part 570c can have the third high degree (x associated with it with the 3rd EM tuning part 575c 3), and third high degree (x 3) can change to about 10mm from about 0.1mm.C grade gas ions tuning part 570c can have the three width (z associated with it with the 3rd EM tuning part 575c 3), and the 3rd width (z 3) can change to about 10mm from about 0.1mm.
Fig. 5 D shows front view and the end view of the 4th exemplary plasma tuning plug (570d, 575d).Fourth class gas ions tuning part 570d can have the four length (y associated with it 41), and the 4th length (y 41) can change to about 400mm from about 1mm.The 4th EM tuning part 575d can have the length (y associated with it 42), and length (y 42) can change to about 400mm from about 1mm.Fourth class gas ions tuning part 570d can have the four height (x associated with it with the 4th EM tuning part 575d 4), and the 4th height (x 4) can change to about 10mm from about 0.1mm.Fourth class gas ions tuning part 570d can have the four width (z associated with it with the 4th EM tuning part 575d 4), and the 4th width (z 4) can change to about 10mm from about 0.1mm.
Fig. 6 A-6D shows the different views of exemplary plasma tuning plug according to an embodiment of the invention.Fig. 6 A shows front view and the end view of the first exemplary plasma tuning plug (670a, 675a).The first plasma tuning part 670a can have the first length (y associated with it 11), and the first length (y 11) can change to about 400mm from about 1mm.The one EM tuning part 675a can have the length (y associated with it 12), and length (y 12) can change to about 400mm from about 1mm.The first plasma tuning part 670a can have the first height (x associated with it with an EM tuning part 675a 1), and the first height (x 1) can change to about 10mm from about 0.1mm.The first plasma tuning part 670a can have the first width (z associated with it with an EM tuning part 675a 1), and the first width (z 1) can change to about 10mm from about 0.1mm.The first plasma tuning part 670a can have the first thickness (t associated with it with an EM tuning part 675a z1), and the first thickness (t z1) can change to about 1mm from about 0.01mm.
Fig. 6 B shows front view and the end view of the second exemplary plasma tuning plug (670b, 675b).The second plasma tuning part 670b can have the first length (y associated with it 21), and the first length (y 21) can change to about 400mm from about 1mm.The 2nd EM tuning part 675b can have the length (y associated with it 22), and length (y 22) can change to about 400mm from about 1mm.The second plasma tuning part 670b can have the second height (x associated with it with the 2nd EM tuning part 675b 2), and the second height (x 2) can change to about 10mm from about 0.1mm.The second plasma tuning part 670b can have the second width (z associated with it with the 2nd EM tuning part 675b 2), and the second width (z 2) can change to about 10mm from about 0.1mm.The second plasma tuning part 670b can have the second thickness (t associated with it with the 2nd EM tuning part 675b z2), and the second thickness (t z2) can change to about 1mm from about 0.01mm.
Fig. 6 C shows front view and the end view of the 3rd exemplary plasma tuning plug (670c, 675c).C grade gas ions tuning part 670c can have the three length (y associated with it 31), and the 3rd length (y 31) can change to about 400mm from about 1mm.The 3rd EM tuning part 675c can have the length (y associated with it 32), and length (y 32) can change to about 400mm from about 1mm.C grade gas ions tuning part 670c can have the third high degree (x associated with it with the 3rd EM tuning part 675c 3), and third high degree (x 3) can change to about 10mm from about 0.1mm.C grade gas ions tuning part 670c can have the three width (z associated with it with the 3rd EM tuning part 675c 3), and the 3rd width (z 3) can change to about 10mm from about 0.1mm.C grade gas ions tuning part 670c can have the three thickness (t associated with it with the 3rd EM tuning part 675c z3and t x3), and the 3rd thickness (t z3and t x3) can change to about 1mm from about 0.01mm.
Fig. 6 D shows front view and the end view of the 4th exemplary plasma tuning plug (670d, 675d).Fourth class gas ions tuning part 670d can have the four length (y associated with it 41), and the 4th length (y 41) can change to about 400mm from about 1mm.The 4th EM tuning part 675d can have the length (y associated with it 42), and length (y 42) can change to about 400mm from about 1mm.Fourth class gas ions tuning part 670d can have the four height (x associated with it with the 4th EM tuning part 675d 4), and the 4th height (x 4) can change to about 10mm from about 0.1mm.Fourth class gas ions tuning part 670d can have the four width (z associated with it with the 4th EM tuning part 675d 4), and the 4th width (z 4) can change to about 10mm from about 0.1mm.Fourth class gas ions tuning part 670d can have the four thickness (t associated with it with the 4th EM tuning part 675d z4and t x4), and the 4th thickness (t z4and t x4) can change to about 1mm from about 0.01mm.
Fig. 7 A-7D shows the different views of exemplary plasma tuning plug according to an embodiment of the invention.Fig. 7 A shows front view and the end view of the first exemplary plasma tuning plug (770a, 775a).The first plasma tuning part 770a can have the first length (y associated with it 11), and the first length (y 11) can change to about 400mm from about 1mm.The one EM tuning part 775a can have the length (y associated with it 12), and length (y 12) can change to about 400mm from about 1mm.The first plasma tuning part 770a can have the first height (x associated with it with an EM tuning part 775a 1), and the first height (x 1) can change to about 10mm from about 0.1mm.The first plasma tuning part 770a can have the first width (z associated with it with an EM tuning part 775a 1), and the first width (z 1) can change to about 10mm from about 0.1mm.Can in the first exemplary plasma tuning plug (770a, 775a), configure the first temperature control loop 772a.For example, temperature control fluid and/or gas can be flowed through the first temperature control loop 772a to control the temperature of the first exemplary plasma tuning plug (770a, 775a).The first temperature control loop 772a can have the first diameter (d associated with it z1), and the first diameter (d z1) can change to about 0.1mm from about 0.001mm.In addition, the first temperature control loop 772a has the first skew (l associated with it x11and l x12), and the first skew (l x11and l x12) can change to about 0.1mm from about 0.01mm.
Fig. 7 B shows front view and the end view of the second exemplary plasma tuning plug (770b, 775b).The second plasma tuning part 770b can have the first length (y associated with it 21), and the first length (y 21) can change to about 400mm from about 1mm.The 2nd EM tuning part 775b can have the length (y associated with it 22), and length (y 22) can change to about 400mm from about 1mm.The second plasma tuning part 770b can have the second height (x associated with it with the 2nd EM tuning part 775b 2), and the second height (x 2) can change to about 10mm from about 0.1mm.The second plasma tuning part 770b can have the second width (z associated with it with the 2nd EM tuning part 775b 2), and the second width (z 2) can change to about 10mm from about 0.1mm.Can in the second exemplary plasma tuning plug (770b, 775b), configure the second temperature control loop 772b.For example, temperature control fluid and/or gas can be flowed through the second temperature control loop 772b to control the temperature of the second exemplary plasma tuning plug (770b, 775b).The second temperature control loop 772b can have the Second bobbin diameter (d associated with it z2), and Second bobbin diameter (d z2) can change to about 0.1mm from about 0.001mm.In addition, the second temperature control loop 772b has the second skew (l associated with it x21and l x22), and the second skew (l x21and l x22) can change to about 0.1mm from about 0.01mm.
Fig. 7 C shows front view and the end view of the 3rd exemplary plasma tuning plug (770c, 775c).C grade gas ions tuning part 770c can have the three length (y associated with it 31), and the 3rd length (y 31) can change to about 400mm from about 1mm.The 3rd EM tuning part 775c can have the length (y associated with it 32), and length (y 32) can change to about 400mm from about 1mm.C grade gas ions tuning part 770c can have the third high degree (x associated with it with the 3rd EM tuning part 775c 3), and third high degree (x 3) can change to about 10mm from about 0.1mm.C grade gas ions tuning part 770c can have the three width (z associated with it with the 3rd EM tuning part 775c 3), and the 3rd width (z 3) can change to about 10mm from about 0.1mm.Can in the 3rd exemplary plasma tuning plug (770c, 775c), configure the 3rd temperature control loop 772c.For example, temperature control fluid and/or gas can be flowed through the 3rd temperature control loop 772c to control the temperature of the 3rd exemplary plasma tuning plug (770c, 775c).The 3rd temperature control loop 772c can have the three diameter (d associated with it z3), and the 3rd diameter (d z3) can change to about 0.1mm from about 0.001mm.In addition, the 3rd temperature control loop 772c has the three skew (l associated with it x31and l x32), and the 3rd skew (l x31and l x32) can change to about 0.1mm from about 0.01mm.
Fig. 7 D shows front view and the end view of the 4th exemplary plasma tuning plug (770d, 775d).Fourth class gas ions tuning part 770d can have the four length (y associated with it 41), and the 4th length (y 41) can change to about 400mm from about 1mm.The 4th EM tuning part 775d can have the length (y associated with it 42), and length (y 42) can change to about 400mm from about 1mm.Fourth class gas ions tuning part 770d can have the four height (x associated with it with the 4th EM tuning part 775d 4), and the 4th height (x 4) can change to about 10mm from about 0.1mm.Fourth class gas ions tuning part 770d can have the four width (z associated with it with the 4th EM tuning part 775d 4), and the 4th width (z 4) can change to about 10mm from about 0.1mm.Can in the 4th exemplary plasma tuning plug (770d, 775d), configure the 4th temperature control loop 772d.For example, temperature control fluid and/or gas can be flowed through the 4th temperature control loop 772d to control the temperature of the 4th exemplary plasma tuning plug (770d, 775d).The 4th temperature control loop 772d can have the four diameter (d associated with it z4), and the 4th diameter (d z4) can change to about 0.1mm from about 0.001mm.In addition, the 4th temperature control loop 772d has the four skew (l associated with it x41and l x42), and the 4th skew (l x41and l x42) can change to about 0.1mm from about 0.01mm.
Fig. 8 shows for the flow chart of exemplary operational process according to an embodiment of the invention.Exemplary multi-step process 800 has been shown in Fig. 8.
In 810, substrate can be positioned on the substrate holder in process chamber, and the first chamber assembly (168a, Fig. 1) and the second chamber assembly (168b, Fig. 1) can be coupled to process chamber.In another embodiment, can utilize first interface assembly (112a, first chamber assembly (168a, Fig. 1) that Fig. 1) will wherein have an EM energy tuning space (169a, Fig. 1) is coupled to the first process chamber (110, Fig. 1), and can utilize the second interface module (112b, Fig. 1) will wherein there is the second chamber assembly (168b of the 2nd EM energy tuning space (169b, Fig. 1), Fig. 1) be coupled to the first process chamber (110, Fig. 1).
In 820, can be by the first plasma tuning plug group { (170a-170e) and (175a-175e), Fig. 1 } from the first chamber assembly (168a, Fig. 1) by first interface assembly (112a, Fig. 1) configuration is to the first process chamber (110, processing space Fig. 1) (115, Fig. 1) in.The first barrier assembly group (164a-164e, Fig. 1) can be coupled to removably first interface assembly (112a, Fig. 1), and can be configured to isolate the first process chamber (110, processing space (115 Fig. 1), an EM energy tuning space (169a, Fig. 1) Fig. 1) and in the first chamber assembly (168a, Fig. 1).The first barrier assembly group (164a-164e, Fig. 1) can be for being coupled to first interface assembly (112a, Fig. 1) by the first plasma tuning plug group { (170a-170e) and (175a-175e), Fig. 1 } removably.For example, the first plasma tuning part (170a-170e, Fig. 1) can be configured in process space (115, Fig. 1) in, and an EM tuning part (175a-175e, Fig. 1) can be configured in an EM energy tuning space (169a, Fig. 1).
In 830, can be by the second plasma tuning plug group { (170f – 170j) and (175f-175j), Fig. 1 } from the second chamber assembly (168b, Fig. 1) by the second interface module (112b, Fig. 1) configuration is to the first process chamber (110, processing space Fig. 1) (115, Fig. 1) in.The second barrier assembly group (164f-164j, Fig. 1) can be coupled to removably the second interface module (112b, Fig. 1), and can be configured to isolate the first process chamber (110, processing space (115 Fig. 1), the 2nd EM energy tuning space (169b, Fig. 1) Fig. 1) and in the second chamber assembly (168b, Fig. 1).The second barrier assembly group (164f-164j, Fig. 1) can be for being coupled to the second interface module (112b, Fig. 1) by the second plasma tuning plug group { (170f – 170j) and (175f – 175j), Fig. 1 } removably.For example, the second plasma tuning part group (170f-170j, Fig. 1) can be configured in process space (115, Fig. 1) in, and the 2nd EM tuning part (175f-175j, Fig. 1) can be configured in the 2nd EM energy tuning space (169b, Fig. 1).
In 840, can be supplied in process chamber, on the first and second plasma tuning plugs by processing gas.During dry plasma etch, process gas and can comprise etchant, passivator or inert gas or the wherein combination of two or more.For example,, when plasma etching is such as silica (SiO x) or silicon nitride (Si xn y) dielectric film time, plasma etching gas composition generally includes such as C 4f 8, C 5f 8, C 3f 6, C 4f 6, CF 4deng at least one the fluorine-based chemical composition (C of carbon xf y), and/or can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z), and can there is inert gas, oxygen, CO or CO 2in at least one.In addition, for example, as etching polysilicon (pol ysilicon), time, plasma etching gas composition generally includes such as HBr, Cl 2, NF 3, or SF 6, or the halogen-containing gas of the combination of two or more wherein, and can comprise such as CHF 3, CH 2f 2deng at least one fluoro alkyl chemical composition (C xh yf z) and inert gas, oxygen, CO or CO 2in at least one or wherein two or more.During plasma enhanced deposition, process gas and can comprise into film precursor, reducibility gas or inert gas or the wherein combination of two or more.
In 850, can produce even microwave plasma by applying the first adjustable microwave signal to the first plasma tuning plug and applying the second adjustable microwave signal to the second plasma tuning plug, and in even microwave plasma treatment substrate.
In some systems, can be at the first chamber assembly (168a, an EM energy tuning space (169a who sets up Fig. 1), Fig. 1), an EM coupling regime group (162a-162e, Fig. 1) is based upon with the first chamber wall (165a, Fig. 1) at a distance of an EM coupling distance (176a-176e, Fig. 1) locate, and an EM tuning part group (175a-175e, Fig. 1) can extend in an EM coupling regime group (162a-162e, Fig. 1).The one EM tuning part (175a-175e, Fig. 1) can be from an EM coupling regime group (162a-162e, Fig. 1) obtain different adjustable microwave signal (energy), and different adjustable microwave signal (energy) can utilize the first plasma tuning part group (170a-170e, Fig. 1) be sent to process space (115, primary importance group (x Fig. 1) 2a-x 2e, Fig. 1) locate.The one EM coupling regime group (162a-162e, Fig. 1) can comprise territory, tunable E-place, territory, tunable H-place, territory, maximum E-place, territory, maximum H-place, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.
The first plasma tuning plates group (161a-161e, Fig. 1) can be coupled to the first control assembly group (160a-160e, Fig. 1), and can be at an EM energy tuning space (169a, Fig. 1) interior by the first plasma tuning plates group (161a-161e, Fig. 1) with respect to the first plasma tuning plug group { (170a-170e) and (175a-175e), Fig. 1 } an EM tuning part group (175a-175e, Fig. 1) move (163a-163e, Fig. 1) EM is tuning apart from group (177a-177e, Fig. 1).The first control assembly group (160a-160e, Fig. 1) He the first plasma tuning plates group (161a-161e, Fig. 1) can be for to from an EM coupling regime group (162a-162e, Fig. 1) be coupled to the first plasma tuning plug group { (170a-170e) and (175a-175e), Fig. 1 } the different tunable microwave signal (energy) of an EM tuning part group (175a-175e, Fig. 1) carry out tuning/optimize.For example, can be at an EM energy tuning space (169a, an EM Fig. 1) is tuning apart from group (177a-177e, Fig. 1) He the first plasma tuning plates group (161a-161e, Fig. 1), set up an EM tuning apart from group (177a-177e, Fig. 1), and an EM is tuning apart from group (177a-177e, Fig. 1), can change to about 1mm from about 0.01mm.One or more controllers (195, Fig. 1) can be coupled to the first control assembly group (160a-160e, Fig. 1), and can be for controlling/optimize the movement (163a-163e, Fig. 1) of the first plasma tuning plates group (161a-161e, Fig. 1).For example, one or more controllers (195, Fig. 1) can be tuning apart from group (177a-177e for controlling/optimize an EM, Fig. 1), during processing at substrate, generate, optimize and/or maintain process chamber (110, processing space Fig. 1) (115, Fig. 1) interior even microwave plasma.
In addition, can be at the second chamber assembly (168b, the 2nd EM energy tuning space (169b setting up Fig. 1), Fig. 1), the 2nd EM coupling regime group (162e-162j, Fig. 1) is based upon with the first chamber wall (165b, Fig. 1) at a distance of the 2nd EM coupling distance group (176e-176ej, Fig. 1) locate, and the 2nd EM tuning part group (175f-175j, Fig. 1) can extend in the 2nd EM coupling regime group (162f-162j, Fig. 1).The 2nd EM tuning part group (175f-175j, Fig. 1) can be from the 2nd EM coupling regime group (162f-162j, Fig. 1) obtain different tunable microwave signal (energy), and different adjustable microwave signal (energy) can utilize the second plasma tuning part group (170f-170j, Fig. 1) be sent to process space (115, second place group (x Fig. 1) 2f-x 2j, Fig. 1) locate.The 2nd EM coupling regime group (162f-162j, Fig. 1) can comprise territory, tunable E-place, territory, tunable H-place, territory, maximum E-place, territory, maximum H-place, maximum voltage region, ceiling capacity region or maximal current regions or its combination in any.
The second plasma tuning plates group (161f-161j, Fig. 1) can be coupled to the second control assembly group (160f-160j, Fig. 1), and can be at the 2nd EM energy tuning space (169b, Fig. 1) interior by the second plasma tuning plates group (161f-161j, Fig. 1) with respect to the second plasma tuning plug group { (170f-170j) and (175f-175j), Fig. 1 } the 2nd EM tuning part (175f-175j, Fig. 1) move (163f-163j, Fig. 1) the 2nd EM is tuning apart from group (177f-177j, Fig. 1).The second control assembly group (160f-160j, Fig. 1) He the second plasma tuning plates group (161f-161j, Fig. 1) can be for to from the 2nd EM coupling regime group (162f-162j, Fig. 1) be coupled to the second plasma tuning plug group { (170f-170j) and (175f-175j), Fig. 1 } the different tunable microwave signal (energy) of the 2nd EM tuning part group (175f-175j, Fig. 1) carry out tuning/optimize.For example, can be at the 2nd EM energy tuning space (169b, the 2nd EM Fig. 1) is tuning apart from group (177f-177j, Fig. 1) He the second plasma tuning plates group (161f-161j, Fig. 1), set up the 2nd EM tuning apart from group (177f-177j, Fig. 1), and the 2nd EM is tuning apart from group (177f-177j, Fig. 1), can change to about 1mm from about 0.01mm.One or more controllers (195, Fig. 1) can be coupled to the second control assembly group (160f-160j, Fig. 1), and can move group (163f-163j, Fig. 1) for controlling/optimize second of the second plasma tuning plates group (161f-161j, Fig. 1).For example, one or more controllers (195, Fig. 1) can be tuning apart from group (177f-177j for controlling/optimize the 2nd EM, Fig. 1), during processing at substrate, generate, optimize and/or maintain process chamber (110, processing space Fig. 1) (115, Fig. 1) interior even microwave plasma.
In addition, one or more controllers (195, Fig. 1) can be coupled to EM source (150a and 150b, Fig. 1), matching network (152a and 152b, Fig. 1), coupling network (154a and 154b, Fig. 1) and chamber assembly (168a and 168b, Fig. 1), and at least one controller (195, Fig. 1) can utilize technical recipe to set up, control and optimization EM source (150a and 150b, Fig. 1), matching network (152a and 152b, Fig. 1), coupling network (154a and 154b, Fig. 1) and chamber assembly (168a and 168b, Fig. 1), to control, process space (115, microwave plasma uniformity Fig. 1).
Fig. 9 shows plasma process system 900 according to an embodiment of the invention.Plasma process system 900 can comprise dry plasma etch system or plasma enhanced deposition system.
Plasma process system 900 comprises process chamber 910, and process chamber 910 has a plurality of locular walls 922 and the interface module (922a and 922b) that is configured to limit processing space 915.Plasma process system 900 is configured to support to process the substrate 905 in space 915.Substrate 905 is exposed to plasma or the process chemical of processing in space 915.Plasma process system 900 can comprise a plurality of chambeies assembly (968a, 968b, 968c, 968d, 968e and 968f) that is coupled to interface module (922a and 922b).The first chamber assembly 968a can be coupled to the first plasma tuning plug group (911a and 912a); The second chamber assembly 968b can be coupled to the second plasma tuning plug group (911b and 912b); The 3rd chamber assembly 968c can be coupled to C grade gas ions tuning plug group (911c and 912c); The 4th chamber assembly 968d can be coupled to fourth class gas ions tuning plug group (911d and 912d); The 5th chamber assembly 968e can be coupled to the 5th plasma tuning plug group (911e and 912e); And the 6th chamber assembly 968f can be coupled to the 6th plasma tuning plug group (911f and 912f).A plurality of plasma tuning plugs (911a, 912a, 911b, 912b, 911c, 912c, 911d, 912d, 911e, 912e, 911f and 912f) can be configured to form plasma in processing space 915.For example, chamber assembly (968a, 968b, 968c, 968d, 968e and 968f) and plasma tuning plug (911a, 912a, 911b, 912b, 911c, 912c, 911d, 912d, 911e, 912e, 911f and 912f) can be configured to use microwave system as described herein (100,200,300 or 400).
Figure 10 A shows the biopsy cavity marker devices top view of the optional embodiment of the process chamber 1010 in microwave processing system 1000.In this embodiment, process chamber 1010 is for having the cylindrical chamber of cylindrical side locular wall 1012.As utilizing previous embodiment, the first chamber assembly 1068a wherein with an EM energy tuning space 1069a is set up the chamber wall 1065a having such as be coupled to chamber wall 1012 by interface module (not shown).The first barrier assembly group (1064a and 1064b) is coupled by locular wall 1012 removably, and is configured to isolation processing space 1015 and an EM energy tuning space 1069a.The first barrier assembly group (1064a and 1064b) is for processing the first plasma tuning part group (1070a and 1070b) in space 1015 and the EM tuning part group (1075a and 1075b) being configured in an EM energy tuning space 1069a is coupled with being disposed at removably by the first plasma tuning plug group { (1070a and 1070b) and (1075a and 1075b) }.Similarly, second, the third and fourth chamber assembly (1068b, 1068c and 1068d) be also illustrated similarly and have therein second, the third and fourth EM energy tuning space (1069b, 1069c and 1069d), and second, the third and fourth barrier assembly group (1064c and 1064d), (1064e and 1064f) and (1064g and 1064h), and first, second and C grade gas ions tuning plug group { (1070c and 1070d) and (1075c and 1075d) }, { (1070e and 1070f) and (1075e and 1075f) } and { (1070g and 1070h) and (1075g and 1075h) }.The details of the parts that Figure 10 A describes can have and the same or analogous characteristic of the described characteristic of similar parts in above reference process system 100,200,300 and 400.Yet, be understandable that, in cylindrical chamber, if plasma tuning part is positioned to height identical in chamber 1010, in space 1015, to extend the plasma of the radius that is less than chamber tuning apart from 1071a-1071h to processing for plasma tuning part 1070a-1070h.
Similarly, as mentioned above, each chamber assembly 1068a-1068d can comprise EM coupling regime 1062a-1062h, plasma tuning plates 1061a-1061h and the control assembly 1060a-1060h being associated with each EM tuning part 1075a-1075h.In addition,, as described for treatment system 100,200,300 and 400 above, each chamber assembly 1068a-1068d can comprise chamber control assembly 1045a-1045d and chamber tuning plates 1046a-1046d.
As shown in the partial sectional view of the line 10B along Figure 10 A in Figure 10 B, substrate 1005 can be positioned on substrate holder, at the radial center place of chamber.Substrate holder 1020 can be fixed, or can be on vertical or translation direction movably.Substrate holder 1020 also can depart from the radial center of chamber 1010, and in any anticipated orientation, be fix or movably.Alternatively, and as will be described herein in more detail below, a plurality of substrates 1005 can be located on substrate holder 1020 isolated everybody be set up, and substrate holder 1020 can be that fix or rotatable in carousel-type, and/or vertically movably.
Figure 11 A shows the biopsy cavity marker devices top view of another embodiment of the process chamber 1110 in microwave processing system 1100.Be similar to process chamber 1010, process chamber 1110 is cylindrical chamber.Treatment system 1100 can have the annular chamber assembly 1168 that limits single EM energy tuning space 1169, rather than is positioned girth a plurality of chambeies assembly around.A plurality of barrier assemblies 1164 compartment of terrains are positioned at around the chamber 1110 that is coupled with plasma tuning plug (1170 and 1175), plasma tuning part 1170 radially extends in process chamber 1110, and EM tuning part 1175 extends in EM energy tuning space 1169, as utilize previous embodiment described.
The related plasma tuning plates 1171 of each plasma tuning plug (1170 and 1175) tool and control assembly 1160.As shown in the partial sectional view in Figure 11 B, as shown in imaginary line (plantom), plasma tuning plates 1161 and control assembly 1160 can be coupled to chamber assembly 1168 from the top (not shown) of chamber assembly from the bottom of chamber assembly or alternatively, but not plasma tuning plates and the control assembly of horizontally-guided.Chamber control assembly 1145 and chamber tuning plates 1146 are also set in chamber assembly 1168.Then, microwave energy can be such as injecting single annular chamber 168 by optional horn shape part 1198.
With reference to figure 11A, rotating disc type substrate holder 1120 is also shown for a plurality of substrates 1105 that support on it further, and a plurality of substrates 1105 can rotate further to guarantee the uniformity of plasma exposure.Substrate holder 1120 can be also that vertically movably this is optional feature certainly, because substrate holder can be fixed.
Although below only describe some embodiment of the present invention in detail, those skilled in the art will readily appreciate that, substantially deviates from the situation of novel teachings of the present invention and advantage, and the many modifications in embodiment are possible.Therefore, all such modifications are all intended within the scope of the invention involved.
Therefore, described description is not intended to restriction invention, and in view of the level of detail that proposed here, in the situation that to understand the modifications and variations of embodiment be possible described structure of the present invention, operation and behavior.Therefore, previous detailed description is not intended to or is intended to limit by any way the present invention, is to limit scope of the present invention by claims on the contrary.

Claims (20)

1. for the treatment of a microwave processing system for substrate, comprising:
Process chamber, comprises the processing space for the treatment of substrate at described process chamber;
The one or more chambeies assembly that is coupled to the side room wall of described process chamber all has electromagnetic energy tuning space in each chamber assembly,
Be based upon the electromagnetic coupled region group in described electromagnetic energy tuning space and be coupled to described side room wall and be configured to the barrier assembly group of described the first electromagnetic energy tuning space and the isolation of described processing space;
Be coupled to the plasma tuning plug group of described barrier assembly group, described plasma tuning plug group has the plasma tuning part group being disposed in described processing space, and is disposed in described electromagnetic energy tuning space and is coupled at least one the electromagnetic force tuning part group in the group of described electromagnetic coupled region; And
Be coupled to the controller of described one or more chambeies assembly, wherein said controller is configured to control the electromagnetic coupled region group in described electromagnetic energy tuning space, controls thus the plasma uniformity in described processing space.
2. microwave processing system according to claim 1, also comprises:
Be coupled to one or more coupling networks of described one or more chambeies assembly;
Be coupled to each the matching network in described one or more coupling network; And
Be coupled to the electromagnet source of described matching network, wherein said electromagnet source is configured to work in the frequency range from 500MHz to 5000MHz; Wherein said controller is coupled to described electromagnet source and is configured to control described electromagnet source, controls thus the plasma uniformity in described processing space.
3. microwave processing system according to claim 1, also comprises:
Plasma tuning plates group, described plasma tuning plates group is configured to approach the described electromagnetic coupled region group in described electromagnetic energy tuning space; And
Control assembly group, described control assembly group is coupled to described plasma tuning plates group by chamber component walls, and described in each, plasma tuning plates is all positioned and a corresponding position at a distance of electromagnetic coupled distance in described electromagnetic force tuning part by one of the correspondence in described the first control assembly; Wherein said controller is coupled to described control assembly group and is configured to control the tuning distance of described the first plasma, controls thus the plasma uniformity in described processing space.
4. microwave processing system according to claim 1, wherein said plasma tuning plug group and described one or more chambeies assembly comprise dielectric material.
5. microwave processing system according to claim 1, also comprises:
Be coupled to the gas tip of described process chamber;
Be coupled to the gas supply sub-component of described gas tip; And
Be coupled to the gas supply system of described gas supply sub-component, wherein said gas tip is configured to processing gas to cause described processing space, wherein said controller is coupled to described gas supply system, is coupled to described gas supply sub-component and is coupled to described gas tip, and be configured to control described gas supply system, described gas supply sub-component and described gas tip, control thus the plasma uniformity in described processing space.
6. microwave processing system according to claim 5, wherein said processing gas comprises two or more in following: C 4f 8, C 5f 8, C 3f 6, C 4f 6, CF 4, CHF 3, CH 2f 2, inert gas, oxygen, CO and CO 2.
7. microwave processing system according to claim 5, wherein said processing gas comprises two or more in following: HBr, Cl 2, NF 3, SF 6, CHF 3, CH 2f 2, inert gas, oxygen, CO and CO 2.
8. microwave processing system according to claim 1, also comprises:
Chamber tuning plates, described chamber tuning plates is configured in each electromagnetic energy tuning space of described one or more chambeies assembly; And
Chamber control assembly, described chamber control assembly is coupled to each chamber tuning plates, wherein said chamber tuning plates is located in and the wall of the described chamber assembly position at a distance of the humorous distance of intonation, wherein said controller is coupled to described chamber control assembly and is configured to control the humorous distance of described intonation, controls thus the plasma uniformity in described processing space.
9. microwave processing system according to claim 8, wherein said chamber tuning plates and described chamber control assembly comprise dielectric material.
10. for the treatment of a microwave processing system for substrate, comprising:
Process chamber, comprises the processing space for the treatment of substrate at described process chamber;
Utilize first interface assembly to be coupled to the first chamber assembly of described process chamber, in described the first chamber assembly, there is the first electromagnetic energy tuning space, described first interface assembly comprises the first barrier assembly, and wherein the first electromagnetic coupled region is to being based upon in the first electromagnetic energy tuning space;
Be coupled to the first plasma tuning plug pair of described the first barrier assembly, described the first plasma tuning plug is to having the plasma tuning part being disposed in described processing space, and there is the electromagnetic force tuning part being disposed in described the first electromagnetic energy tuning space, the first electromagnetic force tuning partial coupling to the first electromagnetic coupled region wherein, and the second electromagnetic force tuning partial coupling to the second electromagnetic coupled region;
Utilize the second interface module to be coupled to the second chamber assembly of described process chamber, in described the second chamber assembly, there is the second electromagnetic energy tuning space, described the second interface module comprises the second barrier assembly, and wherein the second electromagnetic coupled region is to being based upon in described the second electromagnetic energy tuning space;
Be coupled to the second plasma tuning plug pair of described the second barrier assembly, described the second plasma tuning plug is to having the second plasma tuning part being disposed in described processing space, and there is the second electromagnetic force tuning part being disposed in described the second electromagnetic energy tuning space, the 3rd electromagnetic force tuning partial coupling to the three electromagnetic coupled regions wherein, and the 4th electromagnetic force tuning partial coupling to the four electromagnetic coupled regions; And
Be coupled to the controller of described the first chamber assembly and described the second chamber assembly, wherein said controller be configured to control described the first electromagnetic coupled region in described the first electromagnetic energy tuning space to described the second electromagnetic energy tuning space in described the second electromagnetic coupled region pair, control thus the plasma uniformity in described processing space.
11. microwave processing system according to claim 10, also comprise:
Be coupled to the first coupling network of described the first chamber assembly;
Be coupled to the first matching network of described the first coupling network;
Be coupled to the first electromagnet source of described the first matching network, wherein said the first electromagnet source is configured to work in the frequency range from 500MHz to 5000MHz, wherein said controller is coupled to described the first electromagnet source and is configured to control described the first electromagnet source, controls thus the plasma uniformity in described processing space;
Be coupled to the second coupling network of described the second chamber assembly;
Be coupled to the second matching network of described the second coupling network; And
Be coupled to the second electromagnet source of described the second matching network, wherein said the second electromagnet source is configured to work within the scope of the second frequency from 500MHz to 5000MHz, wherein said controller is coupled to described the second electromagnet source and is configured to control described the second electromagnet source, controls thus the plasma uniformity in described processing space.
12. microwave processing system according to claim 10, also comprise:
The first plasma tuning plates pair, described the first plasma tuning plates is to being configured to approach described the first electromagnetic coupled region in described the first electromagnetic energy tuning space;
The first control assembly pair, described the first control assembly is to be coupled to described the first plasma tuning plates pair by the first chamber component walls, and the first plasma tuning plates is positioned and the position of described the first electromagnetic force tuning part at a distance of the first electromagnetic coupled distance by the first control assembly;
The second plasma tuning plates, by the second control assembly, be positioned and the position of described the second electromagnetic force tuning part at a distance of the second electromagnetic coupled distance, wherein said controller is coupled to described the first control assembly and described the second control assembly, described controller is configured to control described the first electromagnetic coupled distance and described the second electromagnetic coupled distance, controls thus the plasma uniformity in described processing space;
The second plasma tuning plates pair, described the second plasma tuning plates is to being configured to approach described the second electromagnetic coupled region in described the second electromagnetic energy tuning space;
The second control assembly pair, described the second control assembly is to be coupled to described the second plasma tuning plates pair by the second chamber component walls, and C grade gas ions tuning plates is positioned and the position of described the 3rd electromagnetic force tuning part at a distance of the 3rd electromagnetic coupled distance by the 3rd control assembly; And
Fourth class gas ions tuning plates, by the 4th control assembly, be positioned and the position of described the 4th electromagnetic force tuning part at a distance of the 4th electromagnetic coupled distance, wherein said controller is coupled to described the first control assembly and described the second control assembly, described controller is configured to control described the 3rd electromagnetic coupled distance and described the 4th electromagnetic coupled distance, controls thus the plasma uniformity in described processing space.
13. microwave processing system according to claim 10, also comprise:
Be coupled to the gas tip of described process chamber;
Be coupled to the gas supply sub-component of described gas tip; And
Be coupled to the gas supply system of described gas supply sub-component, wherein said gas tip is configured to processing gas to cause described processing space, wherein said controller is coupled to described gas supply system, is coupled to described gas supply sub-component, and be coupled to described gas tip, and be configured to control described gas supply system, described gas supply sub-component and described gas tip, control thus the plasma uniformity in described processing space.
14. 1 kinds of methods of utilizing microwave processing system treatment substrate, comprising:
Substrate is positioned in the processing space in process chamber;
Utilize interface module that one or more chambeies assembly is coupled to described process chamber, in the assembly of described one or more chambeies, there is electromagnetic energy tuning space, described interface module comprises barrier assembly group, and wherein electromagnetic coupled region group is based upon in described electromagnetic energy tuning space;
Plasma tuning plug group is coupled to described barrier assembly group, described plasma tuning plug group has the plasma tuning part group being disposed in described processing space, and is disposed in described electromagnetic energy tuning space and is coupled at least one the electromagnetic force tuning part group in the group of described electromagnetic coupled region; And
Controller is coupled to described one or more chambeies assembly, and wherein said controller is configured to control the electromagnetic coupled region group in described electromagnetic energy tuning space, controls thus the plasma uniformity in described processing space.
15. methods according to claim 14, also comprise:
One or more coupling networks are coupled to described one or more chambeies assembly;
Matching network is coupled to each in described one or more coupling network;
Electromagnet source is coupled to described matching network, wherein said electromagnet source is configured to work in the frequency range from 500MHz to 5000MHz, wherein said controller is coupled to described electromagnet source and is configured to control described electromagnet source, controls thus the plasma uniformity in described processing space.
16. methods according to claim 14, are wherein coupled to described process chamber by described one or more chambeies assembly and comprise:
Described the first and second chamber assemblies are coupled to described process chamber, and wherein said barrier assembly group comprises the first barrier assembly and the second barrier assembly, and wherein said electromagnetic coupled region group comprises the first electromagnetic coupled region and the second electromagnetic coupled region; And
Control described the first and second electromagnetic coupled regions in described electromagnetic energy tuning space, control thus the plasma uniformity in described processing space.
17. methods according to claim 14, also comprise:
Gas tip is coupled to described process chamber;
By gas, supply sub-component and be coupled to described gas tip; And
Gas supply system is coupled to described gas supply sub-component, wherein said gas tip is configured to processing gas to cause described processing space, wherein said controller is coupled to described gas supply system, is coupled to described gas supply sub-component and is coupled to described gas tip, and be configured to control described gas supply system, described gas supply sub-component and described gas tip, control thus the plasma uniformity in described processing space.
18. methods according to claim 17, wherein said processing gas comprises two or more in following: C 4f 8, C 5f 8, C 3f 6, C 4f 6, CF 4, CHF 3, CH 2f 2, inert gas, oxygen, CO and CO 2.
19. methods according to claim 17, wherein said processing gas comprises two or more in following: HBr, Cl 2, NF 3, SF 6, CHF 3, CH 2f 2, inert gas, oxygen, CO and CO 2.
20. methods according to claim 14, also comprise:
Chamber tuning plates is positioned in each electromagnetic energy tuning space of described one or more chambeies assembly;
Chamber control assembly is coupled to each chamber tuning plates, wherein said chamber tuning plates is located in and the wall of the described chamber assembly position at a distance of the humorous distance of intonation, wherein said controller is coupled to described chamber control assembly and is configured to control the humorous distance of described intonation, controls thus the plasma uniformity in described processing space.
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