CN104035252A - Wiring structure of array substrate - Google Patents
Wiring structure of array substrate Download PDFInfo
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- CN104035252A CN104035252A CN201410223031.3A CN201410223031A CN104035252A CN 104035252 A CN104035252 A CN 104035252A CN 201410223031 A CN201410223031 A CN 201410223031A CN 104035252 A CN104035252 A CN 104035252A
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Abstract
The invention provides a wiring structure of an array substrate. The wiring structure comprises the substrate, a plurality of gate lines and a plurality of data lines, wherein the gate lines and the data lines are arranged on the same side of the substrate. The wiring structure further comprises a plurality of metal wires. The metal wires are close to the gate lines and the data lines. When any gate line or data line is broken, the broken gate line or data line can be repaired by connecting the corresponding metal wire nearby. Due to the facts that the multiple metal wires are arranged on the array substrate in advance and the metal wires are close to the gate lines and the data lines, when any gate line or data line is broken, and the broken gate line or data can be repaired just by connecting a short connecting line between the corresponding metal wire and the gate line or the data line in a lap joint mode, compared with an existing long line repair structure, the extension length of a long line is greatly reduced, a wiring structure for broken-line repair is simplified, the tedious working procedure for connection of the long line can be avoided, efficiency and quality of line connection are obviously improved, and the yield of products is increased.
Description
Technical field
The present invention relates to a kind of wire structures, refer in particular to a kind of wire structures of array base palte.
Background technology
In the array processing procedure of current thin film transistor liquid crystal display (TFT-LCD) (TFT LCD), the object of last detection of process and repairing is the defect of detection arrays circuit, for detected defect, repair again, shown in Fig. 1, if gate line 20 or data line 30 etc. detected, there is disconnection defect, need to be by the gate line of disconnection 20 or the long line reparation of data line 30 when repairing, it is U-shaped that repair line 40 can be, and is crossed on the two ends at position of the generation fracture of gate line 20 or data line 30.
Adopt the mode of this coiling to repair, along with the length of gate line 20 or data line 30 increases, the length of the long line of required reparation is growth thereupon also, and the success ratio of reparation also can decrease, and the yields of product also declines.
Summary of the invention
The invention provides a kind of wire structures of array base palte, can improve the broken string of array base palte and repair success ratio.
The embodiment of the present invention provides a kind of wire structures of array base palte, some the gate lines and the data line that comprise substrate and be located at substrate homonymy, wherein, described wire structures also further comprises some wires, described metal wire is near gate line and data line, when arbitrary gate line or broken data wire, by accessing close metal wire, can realize the broken string reparation of corresponding gate line or data line.
Preferably, between described metal wire and gate line or data line, by two ends tie-in line, interconnect, under broken string state, two ends tie-in line welds access point on metal wire, described tie-in line is accessed by input end and the output terminal of gate line or data line, by tie-in line and metal wire closed communicating.Described tie-in line is by being deposited on metal material on array and forming.Like this, by being connected with metal wire, make the gate line of broken string or data line recover to be communicated with.
Preferably, the length of described metal wire is equal to or greater than the length of gate line, data line, described metal wire and gate line or data line are parallel to each other, described tie-in line is mutually vertical with metal wire, so that the tie-in line distance being connected across between metal wire and gate line, data line is the shortest, reduce the length of tie-in line, improve the success ratio that broken string is repaired.Wherein, the spacing between described metal wire and gate line or data line is 20-30 μ m.
Preferably, the material of the metal wire of close gate line is gate metal material, identical with the material of gate line; Material near data line is data wire metal material, identical with the material of data line, same to guarantee that broken string is repaired rear impedance phase, makes data transmission stable.
The embodiment of the present invention by setting in advance some metal line on array base palte, metal wire is near gate line and data line, when gate line or broken data wire, only need between metal wire and gate line or data line, overlap a bit of tie-in line, can realize the reparation of broken string, with respect to existing long line repair structure, greatly shortened the extended length of long line, simplified wire structures when broken string is repaired, both can avoid the loaded down with trivial details operation of conventional long line wiring, and obviously improved efficiency and the quality of wiring, improved the yield of product.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the wire structures of existing array base palte;
The schematic diagram of the wire structures of a kind of array base palte that Fig. 2 provides for the embodiment of the present invention.
Embodiment
For the long line broken string of existing array base palte, repair the low problem of success ratio, shown in Fig. 2, the invention provides a kind of wire structures of array base palte, some the gate lines 2 and the data line 3 that comprise substrate 1 and be located at substrate 1 homonymy, wherein, described wire structures also further comprises some wires 4, described metal wire 4 is near gate line 2 and data line 3, when arbitrary gate line 2 or data line 3 broken string, by accessing close metal wire 4, can realize the broken string reparation of corresponding gate line 2 or data line 3.
Two gate lines 2 and two data lines 3 on described substrate 1, laid are determined pixel regions, described two gate lines 2 are parallel to each other, two data lines 3 are also parallel to each other, be connected with the input/output terminal of controlling IC respectively, realize the transmission of data, gate line 2 for the conducting of controlling TFT with by, data line 3 is for controlling output voltage or the electric current of TFT.The quantity of metal wire 4 is identical with data line 3 with gate line 2, and in the present embodiment, described metal wire 4 is four, close with gate line 2 and data line 3 respectively, for when gate line 2 or data line 3 broken string, it is repaired.Wherein, metal wire 4 parallels with gate line 2, and is located at the inner side of two gate lines 2, and meetings such as its length or be greater than the length of gate line 2, data line 3 realize short-range broken string reparation to facilitate.Between described metal wire 4 and gate line 2 or data line 3, by two ends tie-in line 5, interconnect, under broken string state, two ends tie-in line 5 welds access point on metal wire 4, described tie-in line 5 is accessed by input end A and the output terminal B of gate line 2 or data line 3, by tie-in line 5 and metal wire 4 closed communicatings.Like this, by being connected with metal wire 4, make the gate line 2 of broken string or data line 3 recover to be communicated with.Tie-in line 5 is perpendicular with metal wire 4, so that the tie-in line distance being connected across between metal wire 4 and gate line 2, data line 3 is the shortest, reduces the length of tie-in line 5, improves the success ratio that broken string is repaired.Preferably, the spacing between described metal wire and gate line or data line is 20-30 μ m.After wiring, one end of tie-in line 5 is connected with output terminal B with the input end A of gate line 2 or data line 3, the other end is overlapped on metal wire 4, therefore, when gate line 2 or data line 3 broken string, only need to the input end A of corresponding gate line 2 or data line 3 and output terminal B with near metal wire 4 overlap joints, can realize broken string reparation, resume data transmission.Described tie-in line 5, by metal material is deposited on array and is formed, certainly, also can form in other way.
Wherein, the material of the metal wire 4 of close gate line is gate metal material, identical with the material of gate line 2; Material near data line 3 is data wire metal material, identical with the material of data line 3, same to guarantee that broken string is repaired rear impedance phase, makes data transmission stable.
The wire structures of a kind of array base palte of the present invention, in order to solve in wiring, the length of gate line or data line is longer, the problem easily breaking, a kind of broken string repair mode of shorting stub is provided, on array base palte, set in advance some metal line, metal wire is near gate line and data line, when gate line or broken data wire, only need between metal wire and gate line or data line, overlap a bit of tie-in line, can realize the reparation of broken string, with respect to existing long line repair structure, greatly shortened the winding length of tie-in line, simplified wire structures when broken string is repaired, both can avoid the loaded down with trivial details operation of long line wiring, and efficiency and the quality of wiring have obviously been improved, improved the yield of product.
By reference to the accompanying drawings embodiments of the invention are described above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; rather than restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not departing from the scope situation that aim of the present invention and claim protect, also can make a lot of forms, within these all belong to protection of the present invention.
Claims (9)
1. the wire structures of an array base palte, some the gate lines and the data line that comprise substrate and be located at substrate homonymy, it is characterized in that: described wire structures also further comprises some wires, near each described gate line and data line, be respectively arranged with described metal wire, when arbitrary gate line or broken data wire, by accessing close metal wire, realize the broken string reparation of corresponding gate line or data line.
2. the wire structures of array base palte according to claim 1, is characterized in that: when breaking reparation, described metal wire interconnects by tie-in line respectively and between the gate line of generation broken string or data line.
3. the wire structures of array base palte according to claim 2, is characterized in that: described tie-in line is accessed by input end and the output terminal of gate line or data line.
4. the wire structures of array base palte according to claim 3, is characterized in that: described tie-in line is by being deposited on metal material on array and forming.
5. the wire structures of array base palte according to claim 3, is characterized in that: the length of described metal wire is equal to or less than the length of gate line, data line.
6. the wire structures of array base palte according to claim 3, is characterized in that: described metal wire and gate line or data line are parallel to each other.
7. the wire structures of array base palte according to claim 6, is characterized in that: described tie-in line is mutually vertical with metal wire.
8. the wire structures of array base palte according to claim 2, is characterized in that: the material of the metal wire of close gate line is gate metal material, identical with the material of gate line; Material near data line is data wire metal material, identical with the material of data line.
9. the wire structures of array base palte according to claim 2, is characterized in that: the spacing between described metal wire and gate line or data line is 20-30 μ m.
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CN201410223031.3A CN104035252A (en) | 2014-05-23 | 2014-05-23 | Wiring structure of array substrate |
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CN201410223031.3A CN104035252A (en) | 2014-05-23 | 2014-05-23 | Wiring structure of array substrate |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104460071A (en) * | 2014-12-31 | 2015-03-25 | 深圳市华星光电技术有限公司 | Thin film transistor array substrate and liquid crystal display panel |
CN105467706A (en) * | 2016-01-15 | 2016-04-06 | 武汉华星光电技术有限公司 | Array substrate structure and array substrate broken line repairing method |
CN105511185A (en) * | 2016-01-15 | 2016-04-20 | 青岛海信电器股份有限公司 | Large-screen LCM liquid crystal display panel and repairing circuit thereof |
CN110456583A (en) * | 2019-06-11 | 2019-11-15 | 惠科股份有限公司 | Display panel, repairing method thereof and display device |
CN111399295A (en) * | 2020-04-26 | 2020-07-10 | 成都中电熊猫显示科技有限公司 | Broken line repairing method and device, electronic equipment and storage medium |
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CN1632684A (en) * | 2005-01-31 | 2005-06-29 | 广辉电子股份有限公司 | Liquid crystal panel structure and forming method thereof |
CN1716068A (en) * | 2004-06-28 | 2006-01-04 | Nec液晶技术株式会社 | Liquid crystal display substrate and method of repairing the same |
US20080024693A1 (en) * | 2006-07-28 | 2008-01-31 | Samsung Electronics Co., Ltd. | Liquid crystal display, method of manufacturing the same, and method of repairing the same |
CN101876760A (en) * | 2009-11-11 | 2010-11-03 | 友达光电股份有限公司 | Common repair structure for a signal line in a liquid crystal display |
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2014
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Patent Citations (4)
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CN1716068A (en) * | 2004-06-28 | 2006-01-04 | Nec液晶技术株式会社 | Liquid crystal display substrate and method of repairing the same |
CN1632684A (en) * | 2005-01-31 | 2005-06-29 | 广辉电子股份有限公司 | Liquid crystal panel structure and forming method thereof |
US20080024693A1 (en) * | 2006-07-28 | 2008-01-31 | Samsung Electronics Co., Ltd. | Liquid crystal display, method of manufacturing the same, and method of repairing the same |
CN101876760A (en) * | 2009-11-11 | 2010-11-03 | 友达光电股份有限公司 | Common repair structure for a signal line in a liquid crystal display |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104460071A (en) * | 2014-12-31 | 2015-03-25 | 深圳市华星光电技术有限公司 | Thin film transistor array substrate and liquid crystal display panel |
CN105467706A (en) * | 2016-01-15 | 2016-04-06 | 武汉华星光电技术有限公司 | Array substrate structure and array substrate broken line repairing method |
CN105511185A (en) * | 2016-01-15 | 2016-04-20 | 青岛海信电器股份有限公司 | Large-screen LCM liquid crystal display panel and repairing circuit thereof |
CN105467706B (en) * | 2016-01-15 | 2018-10-26 | 武汉华星光电技术有限公司 | Array base-plate structure and array substrate broken wire repair method |
CN105511185B (en) * | 2016-01-15 | 2019-09-17 | 青岛海信电器股份有限公司 | The liquid crystal display panel and its fix-up circuit of large-size screen monitors LCM |
CN110456583A (en) * | 2019-06-11 | 2019-11-15 | 惠科股份有限公司 | Display panel, repairing method thereof and display device |
CN111399295A (en) * | 2020-04-26 | 2020-07-10 | 成都中电熊猫显示科技有限公司 | Broken line repairing method and device, electronic equipment and storage medium |
CN111399295B (en) * | 2020-04-26 | 2022-11-29 | 成都中电熊猫显示科技有限公司 | Broken line repairing method and device, electronic equipment and storage medium |
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Application publication date: 20140910 |