CN104030728B - A kind of material post-treating method improving pyroelectric property - Google Patents

A kind of material post-treating method improving pyroelectric property Download PDF

Info

Publication number
CN104030728B
CN104030728B CN201410275895.XA CN201410275895A CN104030728B CN 104030728 B CN104030728 B CN 104030728B CN 201410275895 A CN201410275895 A CN 201410275895A CN 104030728 B CN104030728 B CN 104030728B
Authority
CN
China
Prior art keywords
piezoelectric
electric field
pyroelectric property
treating method
pyroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410275895.XA
Other languages
Chinese (zh)
Other versions
CN104030728A (en
Inventor
方必军
刘星
陈智慧
丁建宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shermer Energy Saving Technology Zhenjiang Co ltd
Original Assignee
Changzhou University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou University filed Critical Changzhou University
Priority to CN201410275895.XA priority Critical patent/CN104030728B/en
Publication of CN104030728A publication Critical patent/CN104030728A/en
Application granted granted Critical
Publication of CN104030728B publication Critical patent/CN104030728B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The present invention relates to a kind of material post-treating method improving piezoelectric pyroelectric property, belong to pyroelectricity Application Areas; Aging and add stress thermal treatment pre-treatment is carried out to piezoelectric by alternating-electric field, common direct current polarization technique is adopted to polarize to piezoelectric again, the pyroelectric property 20-30% of piezoelectric can be improved, be expected to obtain application at pyroelectric detector production field.

Description

A kind of material post-treating method improving pyroelectric property
Technical field
The present invention relates to a kind of material post-treating method improving piezoelectric pyroelectric property, belong to pyroelectricity Application Areas; Aging and add stress thermal treatment pre-treatment is carried out to piezoelectric by alternating-electric field, common direct current polarization technique is adopted to polarize to piezoelectric again, the pyroelectric property 20-30% of piezoelectric can be improved, be expected to obtain application at pyroelectric detector production field.
Background technology
Since the Gulf War, night vision (imaging) function of the infrared focal plane array device that US military uses, has startled international infrared scientific circles, has caused the fast development of global range infrared detector development.
Pyroelectricity material is the core parts of pyroelectric detector, its the good and bad effect directly determining infrared acquisition of performance, the pyroelectricity material of application at present mainly contains the stupaliths such as lithium tantalate (LT), TGS (TGS) and ferro-niobium lead zirconates (PZFN).
In recent years, Fang Bijun etc. find (1-x) Pb (Zn of improved Booth encoding growth 1/3nb 2/3) O 3-xPbTiO 3(PZNT) monocrystalline (BijunFang, etal., Growthandpyroelectricpropertiesof [001]-oriented (1-x) Pb (Zn 1/3nb 2/3) O 3-xPbTiO 3singlecrystals, Appl.Phys.Lett., 2007,91 (6): 062902/1-3), the 0.8Pb (Mg for preparing of reaction sintering 1/3nb 2/3) O 3-0.2PbTiO 3(0.8PMN-0.2PT) pottery (BijunFang, etal., Largepyroelectricresponseof0.8Pb (Mg 1/3nb 2/3) O 3-0.2PbTiO 3ceramicspreparedbyreaction-sinteringmethod, Mater.Lett., 2012,84:91-93) there is larger pyroelectric coefficient and the higher thermoelectricity detection figure of merit, dielectric, ermal physics and good mechanical performance, stable chemical nature, is applicable to make pyroelectric detector, is expected to obtain application in Uncooled infrared detection and image device.
Piezoelectric ceramics and piezoelectric monocrystal need to carry out direct current polarization process just can present pyroelectric property, common direct current polarization technique be under room temperature or certain temperature condition, apply a certain size DC electric field polarization the regular hour, piezoelectric itself does not need to carry out extra process, as everyone knows, except developing the novel pyroelectricity material of excellent combination property, exploring new material aftertreatment technology and polarization process, is the effective ways improving existing piezoelectric pyroelectric property.
Summary of the invention
The piezoelectric that the present invention selects is improved Booth encoding growth lead zinc niobium titanate(PZNT) prepared by monocrystalline and reaction sintering pMNT(PMNT) pottery, applies alternating-electric field respectively aging and add stress thermal treatment and carry out material aftertreatment, then carries out direct current polarization process with the condition of bibliographical information, adopt charge integration method to measure the pyroelectric coefficient of piezoelectric; Result shows, the material aftertreatment technology proposed by the present invention carries out pre-treatment to piezoelectric, then carries out common direct current polarization process, can improve the pyroelectric property 20-30% of piezoelectric, is expected to obtain application at pyroelectric detector production field.
Main contents of the present invention comprise:
Obtained the coercive field of piezoelectric by ferroelectric hysteresis loop measurement, under low frequency, weak electric field, carry out alternating-electric field burin-in process.
Described low frequency refers to below 1kHz, is preferably 1Hz-250Hz.
The strength of electric field of described weak electric field is the 20-50% of piezoelectric coercive field.
The time of described burin-in process is 10 5more than the cycle, for considering of efficiency and aging effect, be preferably 10 5-10 7cycle.
Described piezoelectric refers to PZNT monocrystalline and PMNT pottery.
The T of piezoelectric is obtained by dielectric temperature spectrometry 0or T mtemperature, T 0for the Curie-weiss temperature of normal frroelectrics, T mfor the temperature that the specific inductivity maximum value of relaxation ferroelectric is corresponding, apply 50MPa stress, at T 0or T mheat-treated 2-4h.
Piezoelectric after pre-treatment, adopts common direct current polarization technique to polarize to piezoelectric.
Embodiment
Embodiment 1:
PZNT95/5, PZNT91/9, PZNT85/15 monocrystalline [001] wafer of improved Booth encoding growth applies 200V/mm, 150V/mm, 450V/mm electric field (coercive field E of PZNT95/5, PZNT91/9, PZNT85/15 monocrystalline [001] wafer of improved Booth encoding growth respectively cbe respectively 742V/mm, 704V/mm, 1240V/mm) (BijunFang, etal., Successivechangeofphasetransitioncharacterinleadzincniob atetitanatesinglecrystals, JournalofthePhysicalSocietyofJapan, 2004,73 (4): 1090-1091.), under 250Hz frequency, alternating-electric field burin-in process 10 is carried out 5cycle; PZNT monocrystalline after alternating-electric field burin-in process applies 50MPa stress, respectively at 150 DEG C, 185 DEG C, 215 DEG C thermal treatment 2h; The pretreated PZNT monocrystalline of the material aftertreatment technology proposed by the present invention, adopts the condition of bibliographical information to carry out direct current polarization process: in 80 DEG C of silicone oil baths, apply 2kV/mm DC electric field polarization 15min, be cooled to room temperature under the condition that electric field reduces by half.
Embodiment 2:
0.8PMN-0.2PT pottery prepared by reaction sintering applies the 150V/mm electric field (E of 0.8PMN-0.2PT pottery prepared by reaction sintering c=316V/mm) (BijunFang, etal., Largepyroelectricresponseof0.8Pb (Mg 1/3nb 2/3) O 3-0.2PbTiO 3ceramicspreparedbyreaction-sinteringmethod, Mater.Lett., 2012,84:91-93), under 25Hz frequency, carry out alternating-electric field burin-in process 10 6cycle; 0.8PMN-0.2PT pottery after alternating-electric field burin-in process applies 50MPa stress, at 85 DEG C of thermal treatment 4h; The pretreated 0.8PMN-0.2PT pottery of the material aftertreatment technology proposed by the present invention, the condition of bibliographical information is adopted to carry out direct current polarization process: in 120 DEG C of silicone oil baths, to apply 2kV/mm DC electric field polarization 15min, under the condition that electric field reduces by half, be cooled to room temperature.
The pyroelectric coefficient of the PMNT pottery prepared by charge integration method, the PZNT monocrystalline utilizing computer-controlled PY2 pyroelectricity test macro measurement improved Booth encoding to grow, reaction sintering, temperature measuring precision 0.01 DEG C, charge measurement precision 10 -11c.
PMNT pottery prepared by PZNT monocrystalline, reaction sintering that table 1 provides improved Booth encoding growth applies relevant performance index to pyroelectricity; Can find out, the material aftertreatment technology proposed by the present invention carries out pre-treatment to piezoelectric, adopt common direct current polarization technique to polarize to piezoelectric again, specific inductivity, the dielectric loss of piezoelectric monocrystal and piezoelectric ceramics decrease, and pyroelectric coefficient improves 20-30%.
The performance quality of pyroelectricity material uses the current-responsive figure of merit usually f i =p/ c v, the voltage responsive figure of merit f v =p/ ( c v ), detection the figure of merit f d =p/ [ c v( tan ) 1/2] evaluate, wherein pfor pyroelectric coefficient, c vfor volume specific heat (J/m 3k), =8.854 10 -12f/m is permittivity of vacuum, for relative permittivity.The material aftertreatment technology that the present invention proposes makes the specific inductivity of the piezoelectric after polarizing and dielectric loss reduction, pyroelectric coefficient improve (table 1), is conducive to the Pyroelectric response figure of merit improving piezoelectric; The Pyroelectric response figure of merit of PMNT pottery prepared by the PZNT monocrystalline that the improved Booth encoding that table 2 is given by above-mentioned formulae discovery grows, reaction sintering; Can find out, the material aftertreatment technology that the present invention proposes improves the over-all properties of pyroelectricity material, is expected to obtain application at pyroelectric detector production field.
Table 1
Table 2

Claims (4)

1. improve a material post-treating method for pyroelectric property, the pyroelectric property 20-30% of piezoelectric can be improved, and the time stability of pyroelectric property improve, and it is characterized in that: comprise the following steps:
(1) under low-frequency ac weak electric field, to piezoelectric, carry out alternating-electric field burin-in process, eliminate space charge defect;
(2) 50MPa holding force is applied, at piezoelectric T 0or T mheat-treated 2-4h, eliminates the stress of the aging introducing of alternating-electric field, improves the polarization performance of ferroelectric domain;
(3) common direct current polarization technique is adopted to carry out direct current polarization process to piezoelectric;
Described low frequency refers to below 1kHz; The strength of electric field of described weak electric field is the 20-50% of piezoelectric coercive field;
The time of described burin-in process is 10 5more than the cycle.
2. a kind of material post-treating method improving pyroelectric property as claimed in claim 1, is characterized in that: described low frequency is 1Hz-250Hz.
3. a kind of material post-treating method improving pyroelectric property as claimed in claim 1, is characterized in that: the time of described burin-in process is 10 5-10 7cycle.
4. a kind of material post-treating method improving pyroelectric property as claimed in claim 1, is characterized in that: described piezoelectric refers to lead zinc niobium titanate monocrystalline and PMNT pottery.
CN201410275895.XA 2014-06-20 2014-06-20 A kind of material post-treating method improving pyroelectric property Active CN104030728B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410275895.XA CN104030728B (en) 2014-06-20 2014-06-20 A kind of material post-treating method improving pyroelectric property

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410275895.XA CN104030728B (en) 2014-06-20 2014-06-20 A kind of material post-treating method improving pyroelectric property

Publications (2)

Publication Number Publication Date
CN104030728A CN104030728A (en) 2014-09-10
CN104030728B true CN104030728B (en) 2015-12-09

Family

ID=51461758

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410275895.XA Active CN104030728B (en) 2014-06-20 2014-06-20 A kind of material post-treating method improving pyroelectric property

Country Status (1)

Country Link
CN (1) CN104030728B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106467411A (en) * 2016-09-08 2017-03-01 常州大学 A kind of material post-processing approach improving NBT base piezoelectric ceramics performance
CN106631156B (en) * 2016-09-08 2019-07-09 常州大学 A kind of material post-processing approach improving NKN base ceramics stability and piezoelectric property

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102492991A (en) * 2011-12-14 2012-06-13 常州大学 Lead niobate zincate-lead titanate (PZNT) single crystal material and pyroelectric application thereof
CN103601489A (en) * 2013-08-06 2014-02-26 常州大学 Pyroelectric material and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102492991A (en) * 2011-12-14 2012-06-13 常州大学 Lead niobate zincate-lead titanate (PZNT) single crystal material and pyroelectric application thereof
CN103601489A (en) * 2013-08-06 2014-02-26 常州大学 Pyroelectric material and preparation method thereof

Also Published As

Publication number Publication date
CN104030728A (en) 2014-09-10

Similar Documents

Publication Publication Date Title
Luo et al. Giant strains in non-textured (Bi1/2Na1/2) TiO3-based lead-free ceramics
He et al. Ferroelectric, photoelectric, and photovoltaic performance of silver niobate ceramics
Li et al. Defect dipoles and electrical properties of magnesium B-site substituted sodium potassium niobates
WO2016015462A1 (en) Tetragonal pyroelectric relaxor ferroelectric single crystal material and preparation method therefor
Yang et al. Structure and piezoelectric properties of Fe‐doped potassium sodium niobate tantalate lead‐free ceramics
Xie et al. Highly (100)‐oriented Bi (Ni1/2Hf1/2) O3‐PbTiO3 relaxor‐ferroelectric films for integrated piezoelectric energy harvesting and storage system
Jiang et al. Electrical properties of (1− x)(Bi0. 5Na0. 5) TiO3–xKNbO3 lead-free ceramics
Wang et al. Preparation and Electric Properties of Bi 0.5 Na 0.5 TiO 3–Bi (Mg 0.5 Ti 0.5) O 3 Lead‐Free Piezoceramics
Liu et al. All‐Ceramic Flexible Piezoelectric Energy Harvester
Kim et al. High‐performance (Na0. 5K0. 5) NbO3 thin film piezoelectric energy Harvester
Chen et al. Temperature Gradient Introduced Ferroelectric Self‐Poling in BiFeO 3 Ceramics
CN104030728B (en) A kind of material post-treating method improving pyroelectric property
Wang et al. Enhanced magnetoelectric coupling in Pb (Zr 0.52 Ti 0.48) O 3 film-on-CoFe 2 O 4 bulk ceramic composite with LaNiO 3 bottom electrode
Zhao et al. Pyroelectric performances of relaxor‐based ferroelectric single crystals and related infrared detectors
Rogazinskaya et al. Properties of nanoporous aluminum oxide with triglycine sulfate and Rochelle salt inclusions
Jiang et al. Application study of Mn-doped PIN-PMN-PT relaxor ferroelectric crystal grown by vertical gradient freeze method
Wang et al. Preparation and Electric Properties of Bi 0.5 Na 0.5 TiO 3–Bi (Al 0.5 Ga0. 5) O 3 Lead‐Free Piezoceramics
Huang et al. Significant polarization variation near room temperature of Ba0. 65Sr0. 35TiO3 thin films for pyroelectric energy harvesting
CN110527952A (en) A kind of barium titanate/nickel acid lanthanum ferroelectric superlattice material and preparation method thereof
Wang et al. Structure, electrical properties and temperature stability of PIN–PZN–PT piezoelectric ceramics with morphotropic phase boundary compositions
Bhadala et al. Synthesis, structural, electrical and thermal properties of ScFeO3 ceramic
Dai et al. Investigation of (1− x)(Bi0. 94La0. 06)(Ga0. 05Fe0. 95) O3–xPbTiO3 ceramics for high temperature applications
Tang et al. Pyroelectric energy harvesting and ferroelectric properties of Pb x Sr1-x TiO3 ceramics
Yang et al. Antiferroelectric single crystal of La0. 011Pb0. 984 (Lu1/2Nb1/2) O3 with high energy storage density
Wang et al. High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20201119

Address after: No. 159, Chengjiang Middle Road, Jiangyin City, Wuxi City, Jiangsu Province

Patentee after: Jiangyin Intellectual Property Operation Co.,Ltd.

Address before: Gehu Lake Road Wujin District 213164 Jiangsu city of Changzhou province No. 1

Patentee before: CHANGZHOU University

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20240207

Address after: Building B4, Central R&D Zone, No. 99 Jing15th Road, New District, Zhenjiang City, Jiangsu Province, 212000

Patentee after: Shermer energy saving technology (Zhenjiang) Co.,Ltd.

Country or region after: China

Address before: No. 159, Chengjiang Middle Road, Jiangyin City, Wuxi City, Jiangsu Province

Patentee before: Jiangyin Intellectual Property Operation Co.,Ltd.

Country or region before: China