CN104009165B - The preparation method of a kind of organic electroluminescence device - Google Patents
The preparation method of a kind of organic electroluminescence device Download PDFInfo
- Publication number
- CN104009165B CN104009165B CN201310059586.4A CN201310059586A CN104009165B CN 104009165 B CN104009165 B CN 104009165B CN 201310059586 A CN201310059586 A CN 201310059586A CN 104009165 B CN104009165 B CN 104009165B
- Authority
- CN
- China
- Prior art keywords
- layer
- glass
- charcoal
- zinc oxide
- aero gel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000011521 glass Substances 0.000 claims abstract description 70
- 239000004964 aerogel Substances 0.000 claims abstract description 59
- 239000011787 zinc oxide Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000002347 injection Methods 0.000 claims description 27
- 239000007924 injection Substances 0.000 claims description 27
- 238000007747 plating Methods 0.000 claims description 27
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 25
- 230000005540 biological transmission Effects 0.000 claims description 23
- ORNUPNRNNSVZTC-UHFFFAOYSA-N 2-vinylthiophene Chemical compound C=CC1=CC=CS1 ORNUPNRNNSVZTC-UHFFFAOYSA-N 0.000 claims description 15
- 239000007864 aqueous solution Substances 0.000 claims description 15
- 238000005566 electron beam evaporation Methods 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 14
- 229920006389 polyphenyl polymer Polymers 0.000 claims description 13
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 230000001133 acceleration Effects 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000010025 steaming Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 7
- 239000007858 starting material Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 61
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 16
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 12
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 12
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical group O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical group [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 6
- 229910000024 caesium carbonate Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 5
- 239000012153 distilled water Substances 0.000 description 5
- 238000011010 flushing procedure Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 4
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 4
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 238000010422 painting Methods 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- MWMNLUGPPZOPJQ-UHFFFAOYSA-N 4-(4-aminophenyl)-3-naphthalen-1-ylaniline Chemical class C1=CC(N)=CC=C1C1=CC=C(N)C=C1C1=CC=CC2=CC=CC=C12 MWMNLUGPPZOPJQ-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Tetranitrate Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 2
- 239000002957 persistent organic pollutant Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of organic electroluminescence device and its preparation method. Between substrate of glass and anode, prepare charcoal-aero gel layer and zinc oxide film successively as light removing layer, the light being originally transmitted into anode both sides can be made to return to bottom device by scattering, and avoid total reflection phenomenon, thus improve the light extraction efficiency of device. Preparation method of the present invention is simple, is easy to control and operation, and starting material easily obtain.
Description
Technical field
The invention belongs to field of organic electroluminescence, it is specifically related to the preparation method of a kind of organic electroluminescence device.
Background technology
Organic electroluminescence device (OLED) is a kind of is luminescent material taking organic materials, the electric energy applied can be converted into the energy conversion device of luminous energy. It has the outstanding properties such as ultra-thin, luminous, response are fast, low-power consumption, has application prospect very widely in fields such as display, illuminations.
The structure of organic electroluminescence device is sandwich structure, has pressed from both sides one or more layers organic film between negative electrode and conductive anode. Containing in the device of multilayered structure, inside the two poles of the earth, mainly comprise luminescent layer, input horizon and transport layer. Organic electroluminescence device is carrier injection type luminescent device, after anode and negative electrode add operating voltage, hole is from anode, electronics is injected into the organic material layer of device work respectively from negative electrode, two kinds of current carriers form hole-electronics to luminescence in luminous organic material, and then light sends from electrode.
In traditional luminescent device, general is all taking indium tin oxide transparent conducting film (ITO) substrate of glass as exiting surface, in this kind of structure, the outgoing of light can first be reflected through the absorption of ITO electro-conductive material, then carries out absorption and the reflection of a substrate of glass, finally just can shine in air, but there is refringence between glass and ITO interface, it is totally reflected when light can be made to arrive glass from ITO, causes the loss of bright dipping, thus it is lower to cause entirety to go out optical property.
Summary of the invention
In order to solve the problem, there is it is desirable to provide a kind of the organic electroluminescence device of relatively high light-emitting efficiency. Present invention also offers the preparation method of a kind of organic electroluminescence device.
First aspect, the present invention provides a kind of organic electroluminescence device, comprise the substrate of glass of stacking successively, light removing layer, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, described smooth removing layer comprises charcoal-aero gel layer and zinc oxide film, the material of described charcoal-aero gel layer comprises charcoal-aero gel, poly-3,4-bis-oxygen vinylthiophene and polyphenyl sulfonate, the material of described zinc oxide film is zinc oxide.
Preferably, substrate of glass be specific refractory power higher than 1.8 opticglass, the transmitance that wavelength is the visible ray of 400��700nm by described opticglass is greater than 90%.
Preferably, the glass trade mark that substrate of glass is selected is N-LAF36, N-LASF31A, N-LASF41 or N-LASF44.
This trade mark is Germany's Xiao Te trade mark (SCHOTT), wherein, the international glass code of N-LAF36 glass is 800424.443, the international glass code of N-LASF31A glass is 883408.551, the international glass code that the international glass code of N-LASF41 glass is 835431.485, N-LASF44 glass is 804465.444.
Charcoal-aero gel layer and zinc oxide film be cascading on the glass substrate as light removing layer.
The material of charcoal-aero gel layer comprises charcoal-aero gel, poly-3,4-bis-oxygen vinylthiophene and polyphenyl sulfonate (PEDOT: PSS).
Charcoal-aero gel has the features such as good conductivity, specific surface area is big, variable density scope is wide, and its structure is the good network structure of low density and stability, has higher porosity, is conducive to scattering of light.
Preferably, the particle diameter of charcoal-aero gel is 10��100nm.
Preferably, the thickness of charcoal-aero gel layer is 10��30 ��m.
Preferably, the total mass ratio of charcoal-aero gel and poly-3,4-bis-oxygen vinylthiophene and polyphenyl sulfonate is 1��20: 100.
Preferably, the mass ratio of poly-3,4-bis-oxygen vinylthiophene and polyphenyl sulfonate is 2: 1��6: 1.
Zinc oxide film is arranged on charcoal-aero gel layer.
Owing to zinc oxide (ZnO) belongs to nanostructure, crystalline size is bigger, light is had strong scattering process, the light being originally transmitted into anode both sides is made to return to bottom device by scattering, decrease the loss of light, and, zinc oxide specific refractory power is lower than anode, avoid the total reflection phenomenon that light is transmitted into substrate of glass process from anode to occur, thus improve the light extraction efficiency of device.
Preferably, the particle diameter of zinc oxide is 50��200nm.
Preferably, the thickness of zinc oxide film is 20��200nm.
Preferably, the material of anode is transparent conductive film, is selected from indium tin oxide (ITO), aluminium zinc oxide (AZO) or indium-zinc oxide (IZO). More preferably, the material of anode is ITO.
Preferably, the thickness of anode is 80��300nm. More preferably, the thickness of anode is 120nm.
The present invention prepares charcoal-aero gel layer and zinc oxide film successively as light removing layer between substrate of glass and anode, light can first arrive at zinc oxide film from anode injection, low-refraction due to zinc oxide and the strong scattering process to light, the light being originally transmitted into anode both sides can be made to return to bottom device by scattering, and avoid total reflection phenomenon, light can pass zinc oxide film effectively, arrives charcoal-aero gel layer. Charcoal-aero gel layer has higher porosity and low-refraction, and the present invention adopt specific refractory power higher than 1.8 opticglass as substrate, because this reducing the generation of the full transmitting of light between charcoal-aero gel layer and substrate of glass, thus improve the light extraction efficiency of device.
Anode arranges hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode successively.
Preferably, the material of hole injection layer is molybdic oxide (MoO3), tungstic oxide (WO3) or Vanadium Pentoxide in FLAKES (V2O5). More preferably, the material of hole injection layer is MoO3��
Preferably, the thickness of hole injection layer is 20��80nm. More preferably, the thickness of hole injection layer is 50nm.
Preferably, the material of hole transmission layer is 1,1-bis-[4-[N, N '-two (p-tolyl) amino] phenyl] hexanaphthene (TAPC), 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA) or N; N '-phenylbenzene-N; N '-two (1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines (NPB). More preferably, the material of hole transmission layer is NPB.
Preferably, the thickness of hole transmission layer is 20��60nm. More preferably, the thickness of hole transmission layer is 40nm.
Preferably, the material of luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl-pyridine-9-vinyl in Lip river of a specified duration)-4H-pyrans (DCJTB), 9,10-bis-(��-naphthyl) anthracene (ADN), 4,4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl (BCzVBi) or oxine aluminium (Alq3). More preferably, the material of luminescent layer is BCzVBi.
Preferably, the thickness of luminescent layer is 5��40nm. More preferably, the thickness of luminescent layer is 25nm.
The material of electron transfer layer is have higher electronic mobility, can the organic molecule material of effective conduction electron.
Preferably, the material of electron transfer layer is 4,7-phenylbenzene-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative or 1,3,5-tri-(1-phenyl-1H-benzoglyoxaline-2-base) benzene (TPBi).
More preferably, 1,2,4-triazole derivative is 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ). More preferably, the material of electron transfer layer is TPBi.
Preferably, the thickness of electron transfer layer is 40��250nm. More preferably, the thickness of electron transfer layer is 80nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs2CO3), cesium fluoride (CsF), nitrine caesium (CsN3) or lithium fluoride (LiF). More preferably, the material of electron injecting layer is LiF.
Preferably, the thickness of electron injecting layer is 0.5��10nm. More preferably, the thickness of electron injecting layer is 1nm.
Preferably, the material of negative electrode is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au). More preferably, the material of negative electrode is aluminium.
Preferably, the thickness of negative electrode is 80��250nm. More preferably, the thickness of negative electrode is 150nm.
Second aspect, the present invention provides the preparation method of a kind of organic electroluminescence device, comprises the following steps:
Cleaning substrate of glass is provided;
Preparing light removing layer on the glass substrate, described smooth removing layer comprises charcoal-aero gel layer and zinc oxide film:
The preparation process of described charcoal-aero gel layer, for mix in poly-3,4-bis-oxygen vinylthiophene and the polyphenyl sulfonate aqueous solution according to massfraction 1��20% by charcoal-aero gel, obtains mixed solution, is spin-coated in described substrate of glass by described mixed solution, then dries;
The preparation process of described zinc oxide film be by zinc oxide by electron beam evaporation plating on described charcoal-aero gel layer; The condition of described electron beam evaporation plating is energy density 10��100W/cm2;
On described zinc oxide film, magnetron sputtering transparent conductive film prepares anode again, and the condition of described magnetron sputtering is acceleration voltage 300��800V, magnetic field 50��200G, power density 1��40W/cm2;
On described anode, thermal resistance steaming is coated with standby hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively, and it is pressure 5 �� 10 that described thermal resistance steams plating condition-5��2 �� 10-3Pa, speed 0.1��1nm/s;
On described electron injecting layer, thermal resistance is steamed and is coated with standby negative electrode, and it is pressure 5 �� 10 that described thermal resistance steams plating condition-5��2 �� 10-3Pa, speed 1��10nm/s.
By the cleaning to substrate of glass, remove the organic pollutant of glass basic surface.
Specifically, the clean operation of substrate of glass is: by substrate of glass successively with distilled water, alcohol flushing, be then placed on soaked overnight in Virahol, removes the organic pollutant of glass surface, obtains the substrate of glass cleaned.
Preferably, substrate of glass be specific refractory power higher than 1.8 opticglass, and be that the transmitance of the visible ray of 400��700nm is greater than 90% to wavelength.
Preferably, the glass trade mark that substrate of glass is selected is N-LAF36, N-LASF31A, N-LASF41 or N-LASF44.
This trade mark is Germany's Xiao Te trade mark (SCHOTT), wherein, the international glass code of N-LAF36 glass is 800424.443, the international glass code of N-LASF31A glass is 883408.551, the international glass code that the international glass code of N-LASF41 glass is 835431.485, N-LASF44 glass is 804465.444.
Stacking prepares charcoal-aero gel layer and zinc oxide film as light removing layer successively on the glass substrate.
Charcoal-aero gel has the features such as good conductivity, specific surface area is big, variable density scope is wide, and its structure is the good network structure of low density and stability, has higher porosity, is conducive to scattering of light.
Charcoal-aero gel is added in poly-3,4-bis-oxygen vinylthiophene and the polyphenyl sulfonate aqueous solution and obtain mixed solution, this mixed solution is spin-coated in substrate of glass, then dry and obtain charcoal-aero gel layer. Wherein, the quality of the charcoal-aero gel added is the 1��20% of poly-3,4-bis-oxygen vinylthiophene and polyphenyl sulfonate aqueous solution quality.
Preferably, poly-3,4-bis-oxygen vinylthiophene and the polyphenyl sulfonate aqueous solution are commercially available common commodity.
Preferably, the mass ratio of poly-3,4-bis-oxygen vinylthiophene and described polyphenyl sulfonate is 2: 1��6: 1.
Preferably, the massfraction gathering poly-3,4-bis-oxygen vinylthiophene in 3,4-bis-oxygen vinylthiophene and the polyphenyl sulfonate aqueous solution is 1%��5%.
Preferably, the particle diameter of charcoal-aero gel is 10��100nm.
Preferably, the thickness of charcoal-aero gel layer is 10��30 ��m.
Preferably, spincoating conditions is rotating speed 2000��6000rpm, the time 10��60s.
Preferably, drying condition is temperature 50��200 DEG C, the time 15��40min.
Zinc oxide film is arranged on charcoal-aero gel layer by the method for electron beam evaporation plating, and the condition of electron beam evaporation plating is energy density 10��100W/cm2��
Owing to zinc oxide (ZnO) belongs to nanostructure, crystalline size is bigger, light is had strong scattering process, the light being originally transmitted into anode both sides is made to return to bottom device by scattering, decrease the loss of light, and, zinc oxide specific refractory power is lower than anode, avoid the total reflection phenomenon that light is transmitted into substrate of glass process from anode to occur, thus improve the light extraction efficiency of device.
Preferably, the particle diameter of zinc oxide is 50��200nm.
Preferably, the thickness of zinc oxide film is 20��200nm.
Preferably, the condition of electron beam evaporation plating is energy density 25��70W/cm2��
Anode is arranged on the another side of substrate of glass by the method for magnetron sputtering.
Preferably, the material of anode is transparent conductive film, is selected from indium tin oxide (ITO), aluminium zinc oxide (AZO) or indium-zinc oxide (IZO). More preferably, the material of anode is ITO.
Preferably, the thickness of anode is 80��300nm. More preferably, the thickness of anode is 120nm.
Preferably, the condition of magnetron sputtering is acceleration voltage 350��400V, magnetic field 100��180G, power density 20��35W/cm2��
The present invention prepares charcoal-aero gel layer and zinc oxide film successively as light removing layer between substrate of glass and anode, light can first arrive at zinc oxide film from anode injection, low-refraction due to zinc oxide and the strong scattering process to light, the light being originally transmitted into anode both sides can be made to return to bottom device by scattering, and avoid total reflection phenomenon, light can pass zinc oxide film effectively, arrives charcoal-aero gel layer.Charcoal-aero gel layer has higher porosity and low-refraction, and the present invention adopt specific refractory power higher than 1.8 opticglass as substrate, because this reducing the generation of the full transmitting of light between charcoal-aero gel layer and substrate of glass, thus improve the light extraction efficiency of device.
On anode, the method being steamed plating by thermal resistance arranges hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively, and it is pressure 5 �� 10 that thermal resistance steams plating condition-5��2 �� 10-3Pa, speed 0.1��1nm/s.
Preferably, thermal resistance steams the condition of plating hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is pressure 8 �� 10-5��5 �� 10-4Pa, speed 0.2��0.3nm/s.
Preferably, the material of hole injection layer is molybdic oxide (MoO3), tungstic oxide (WO3) or Vanadium Pentoxide in FLAKES (V2O5). More preferably, the material of hole injection layer is MoO3��
Preferably, the thickness of hole injection layer is 20��80nm. More preferably, the thickness of hole injection layer is 50nm.
Preferably, the material of hole transmission layer is 1,1-bis-[4-[N, N '-two (p-tolyl) amino] phenyl] hexanaphthene (TAPC), 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA) or N; N '-phenylbenzene-N; N '-two (1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines (NPB). More preferably, the material of hole transmission layer is NPB.
Preferably, the thickness of hole transmission layer is 20��60nm. More preferably, the thickness of hole transmission layer is 40nm.
Preferably, the material of luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl-pyridine-9-vinyl in Lip river of a specified duration)-4H-pyrans (DCJTB), 9,10-bis-(��-naphthyl) anthracene (ADN), 4,4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl (BCzVBi) or oxine aluminium (Alq3). More preferably, the material of luminescent layer is BCzVBi.
Preferably, the thickness of luminescent layer is 5��40nm. More preferably, the thickness of luminescent layer is 25nm.
The material of electron transfer layer is have higher electronic mobility, can the organic molecule material of effective conduction electron.
Preferably, the material of electron transfer layer is 4,7-phenylbenzene-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative or 1,3,5-tri-(1-phenyl-1H-benzoglyoxaline-2-base) benzene (TPBi).
More preferably, 1,2,4-triazole derivative is 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ). More preferably, the material of electron transfer layer is TPBi.
Preferably, the thickness of electron transfer layer is 40��250nm. More preferably, the thickness of electron transfer layer is 80nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs2CO3), cesium fluoride (CsF), nitrine caesium (CsN3) or lithium fluoride (LiF). More preferably, the material of electron injecting layer is LiF.
Preferably, the thickness of electron injecting layer is 0.5��10nm. More preferably, the thickness of electron injecting layer is 1nm.
On electron injecting layer, thermal resistance is steamed and is coated with standby negative electrode, and it is pressure 5 �� 10 that thermal resistance steams plating condition-5��2 �� 10-3Pa, speed 1��10nm/s.
Preferably, condition during thermal resistance evaporation cathode is pressure 5 �� 10-4Pa, speed 2��5nm/s.
Preferably, the material of negative electrode is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au). More preferably, the material of negative electrode is aluminium.
Preferably, the thickness of negative electrode is 80��250nm.More preferably, the thickness of negative electrode is 150nm.
The present invention has following useful effect:
(1) the present invention prepares charcoal-aero gel layer and zinc oxide film successively as light removing layer between substrate of glass and anode, light can first arrive at zinc oxide film from anode injection, low-refraction due to zinc oxide and the strong scattering process to light, the light being originally transmitted into anode both sides can be made to return to bottom device by scattering, and avoid total reflection phenomenon, light can pass zinc oxide film effectively, arrives charcoal-aero gel layer.
(2) charcoal-aero gel layer has higher porosity and low-refraction, and the present invention adopt specific refractory power higher than 1.8 opticglass as substrate, because this reducing the generation of the full transmitting of light between charcoal-aero gel layer and substrate of glass, thus improve the light extraction efficiency of device.
(3) preparation method of the present invention is simple, is easy to control and operation, and starting material easily obtain.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, it is briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structure iron of the organic electroluminescence device that the embodiment of the present invention 1 provides;
Fig. 2 is the organic electroluminescence device that provides of the embodiment of the present invention 1 and the brightness of existing organic electroluminescence device and the graph of a relation of luminous efficiency.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only the present invention's part embodiment, instead of whole embodiments. Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A preparation method for organic electroluminescence device, comprises the following steps:
(1), after N-LASF44 glass distilled water, alcohol flushing is clean, it is placed in Virahol and soaks an evening, obtain the substrate of glass cleaned;
(2) in high vacuum coating system (scientific instrument development center, Shenyang company limited), it is that the charcoal-aero gel of 20nm adds in PEDOT: the PSS aqueous solution according to massfraction 15% by particle diameter, obtain mixed solution, with the rotating speed of 3000rpm, mixed solution being revolved painting 20s is arranged in cleaning substrate of glass, 30min is dried afterwards at 100 DEG C, obtain the charcoal-aero gel layer that thickness is 25 ��m, wherein, in PEDOT: the PSS aqueous solution, the massfraction of PEDOT is the mass ratio of 3.5%, PEDOT and PSS is 3: 1;
Being that the ZnO of 80nm is arranged on charcoal-aero gel layer by electron beam evaporation plating by particle diameter, obtain the zinc oxide film that thickness is 100nm, wherein, the condition of electron beam evaporation plating is energy density 25W/cm2;
(3) preparing anode by magnetron sputtering ITO, thickness is 120nm, and condition is acceleration voltage 400V, magnetic field 100G, power density 20W/cm2;
(4) it is then 5 �� 10 at pressure-4When Pa, with the evaporation rate of 0.2nm/s on anode successively thermal resistance steam plating hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, it is coated with standby negative electrode with the evaporation rate of 5nm/s in the steaming of electron injecting layer surface resistance of heat transfer, obtains organic electroluminescence device.
Specifically, in the present embodiment, the material of hole injection layer is MoO3, thickness is 50nm; The material of hole transmission layer is NPB, and thickness is 40nm; The material of luminescent layer is BCzVBi, and thickness is 25nm; The material of electron transfer layer is TPBi, and thickness is 80nm; The material of electron injecting layer is LiF, and thickness is 1nm; The material of negative electrode is aluminium, and thickness is 150nm.
After above step completes, obtaining a kind of organic electroluminescence device, structure specifically represents and is: N-LASF44 glass/charcoal-aero gel/PEDOT: PSS/ZnO/ITO/MoO3/NPB/BCzVBi/TPBi/LiF/Al��
The Keithley2400 of Ji Shili company of the U.S. is utilized to test electric property, colourimeter (Konica Minolta company of Japan, model: CS-100A) test brightness and colourity, fiber spectrometer (ocean optics company of the U.S., model: USB4000) testing electroluminescent spectrum.
Fig. 1 is the structural representation of the organic electroluminescence device of the present embodiment. As shown in Figure 1, the structure of this organic electroluminescence device comprises the substrate of glass 10 of stacking successively, light removing layer 20, anode 30, hole injection layer 40, hole transmission layer 50, luminescent layer 60, electron transfer layer 70, electron injecting layer 80 and negative electrode 90, and wherein light removing layer comprises charcoal-aero gel layer 201, zinc oxide film 202.
Fig. 2 is the organic electroluminescence device of the present embodiment and the brightness of existing luminescent device and the graph of a relation of luminous efficiency. Wherein, curve 1 is the brightness of organic electroluminescence device and the graph of a relation of current efficiency of the present embodiment; Curve 2 is the brightness of existing luminescent device and the graph of a relation of current efficiency.
As can see from Figure 2, at different brightnesses, the luminous efficiency of the present embodiment organic electroluminescence device all big than existing luminescent device, maximum luminous efficiency is 6.21m/W, and existing luminescent device be only 4.4lm/W, and the luminous efficiency of existing luminescent device along with the increase of brightness and rapid decrease, this explanation, light takes out composite bed and is made up of charcoal-aero gel layer and zinc oxide film and can make in substrate that light shines high refractive index, thus it is extracted in air, and light is had very strong scattering by zinc oxide, bottom direction can be scattered back from the light of side outgoing, this kind of composite bed first passes through scattering, light extraction efficiency is improved again by reducing total reflection probability, thus improve luminous efficiency.
Embodiment 2
A preparation method for organic electroluminescence device, comprises the following steps:
(1), after N-LAF36 glass distilled water, alcohol flushing is clean, it is placed in Virahol and soaks an evening, obtain the substrate of glass cleaned;
(2) in high vacuum coating system (scientific instrument development center, Shenyang company limited), it is that the charcoal-aero gel of 10nm adds in PEDOT: the PSS aqueous solution according to massfraction 20% by particle diameter, obtain mixed solution, with the rotating speed of 2000rpm, mixed solution being revolved painting 10s is arranged in cleaning substrate of glass, 40min is dried afterwards at 50 DEG C, obtain the charcoal-aero gel layer that thickness is 30 ��m, wherein, in PEDOT: the PSS aqueous solution, the massfraction of PEDOT is the mass ratio of 1%, PEDOT and PSS is 2: 1;
Being that the ZnO of 200nm is arranged on charcoal-aero gel layer by electron beam evaporation plating by particle diameter, obtain the zinc oxide film that thickness is 20nm, wherein, the condition of electron beam evaporation plating is energy density 100W/cm2;
(3) preparing anode by magnetron sputtering IZO, thickness is 80nm, and condition is acceleration voltage 800V, magnetic field 200G, power density 1W/cm2;
(4) it is then 2 �� 10 at pressure-3When Pa, with the evaporation rate of 0.1nm/s on anode successively thermal resistance steam plating hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, it is coated with standby negative electrode with the evaporation rate of 10nm/s in the steaming of electron injecting layer surface resistance of heat transfer, obtains organic electroluminescence device.
Specifically, in the present embodiment, the material of hole injection layer is WO3, thickness is 40nm; The material of hole transmission layer is TAPC, and thickness is 45nm; The material of luminescent layer is DCJTB, and thickness is 5nm; The material of electron transfer layer is TAZ, and thickness is 65nm; The material of electron injecting layer is Cs2CO3, thickness is 10nm; The material of negative electrode is Pt, and thickness is 80nm.
After above step completes, obtaining a kind of organic electroluminescence device, structure specifically represents and is: N-LAF36 glass/charcoal-aero gel/PEDOT: PSS/ZnO/IZO/WO3/TAPC/DCJTB/TAZ/Cs2CO3/Pt��
Embodiment 3
A preparation method for organic electroluminescence device, comprises the following steps:
(1), after N-LASF31A glass distilled water, alcohol flushing is clean, it is placed in Virahol and soaks an evening, obtain the substrate of glass cleaned;
(2) in high vacuum coating system (scientific instrument development center, Shenyang company limited), it is that the charcoal-aero gel of 100nm adds in PEDOT: the PSS aqueous solution according to massfraction 1% by particle diameter, obtain mixed solution, with the rotating speed of 6000rpm, mixed solution being revolved painting 60s is arranged in cleaning substrate of glass, 15min is dried afterwards at 200 DEG C, obtain the charcoal-aero gel layer that thickness is 10 ��m, wherein, in PEDOT: the PSS aqueous solution, the massfraction of PEDOT is the mass ratio of 5%, PEDOT and PSS is 6: 1;
Being that the ZnO of 50nm is arranged on charcoal-aero gel layer by electron beam evaporation plating by particle diameter, obtain the zinc oxide film that thickness is 200nm, wherein, the condition of electron beam evaporation plating is energy density 10W/cm2;
(3) preparing anode by magnetron sputtering AZO, thickness is 300nm, and condition is acceleration voltage 300V, magnetic field 50G, power density 40W/cm2;
(4) it is then 5 �� 10 at pressure-5When Pa, with the evaporation rate of 1nm/s on anode successively thermal resistance steam plating hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, it is coated with standby negative electrode with the evaporation rate of 1nm/s in the steaming of electron injecting layer surface resistance of heat transfer, obtains organic electroluminescence device.
Specifically, in the present embodiment, the material of hole injection layer is V2O5, thickness is 20nm; The material of hole transmission layer is NPB, and thickness is 60nm; The material of luminescent layer is ADN, and thickness is 10nm; The material of electron transfer layer is Bphen, and thickness is 250nm; The material of electron injecting layer is CsF, and thickness is 0.5nm. The material material of negative electrode is Au, and thickness is 100nm.
After above step completes, obtaining a kind of organic electroluminescence device, structure specifically represents and is: N-LASF31A glass/charcoal-aero gel/PEDOT: PSS/ZnO/AZO/V2O5/NPB/ADN/Bphen/CsF/Au��
Embodiment 4
A preparation method for organic electroluminescence device, comprises the following steps:
(1), after N-LASF41 glass distilled water, alcohol flushing is clean, it is placed in Virahol and soaks an evening, obtain the substrate of glass cleaned;
(2) in high vacuum coating system (scientific instrument development center, Shenyang company limited), it is that the charcoal-aero gel of 50nm adds in PEDOT: the PSS aqueous solution according to massfraction 10% by particle diameter, obtain mixed solution, with the rotating speed of 4000rpm, mixed solution being revolved painting 15s is arranged in cleaning substrate of glass, 20min is dried afterwards at 100 DEG C, obtain the charcoal-aero gel layer that thickness is 20 ��m, wherein, in PEDOT: the PSS aqueous solution, the massfraction of PEDOT is the mass ratio of 2.5%, PEDOT and PSS is 3: 1;
Being that the ZnO of 150nm is arranged on charcoal-aero gel layer by electron beam evaporation plating by particle diameter, obtain the zinc oxide film that thickness is 150nm, wherein, the condition of electron beam evaporation plating is energy density 10W/cm2;
(3) preparing anode by magnetron sputtering ITO, thickness is 180nm, and condition is acceleration voltage 350V, magnetic field 180G, power density 35W/cm2;
(4) it is then 8 �� 10 at pressure-5When Pa, with the evaporation rate of 0.3nm/s on anode successively thermal resistance steam plating hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, it is coated with standby negative electrode with the evaporation rate of 2nm/s in the steaming of electron injecting layer surface resistance of heat transfer, obtains organic electroluminescence device.
Specifically, in the present embodiment, the material of hole injection layer is WO3, thickness is 80nm; The material of hole transmission layer is TCTA, and thickness is 20nm; The material of luminescent layer is Alq3, thickness is 40nm; The material of electron transfer layer is TPBi, and thickness is 40nm; The material of electron injecting layer is CsN3, thickness is 3nm; The material of negative electrode is Ag, and thickness is 250nm.
After above step completes, obtaining a kind of organic electroluminescence device, structure specifically represents and is: N-LASF41 glass/charcoal-aero gel/PEDOT: PSS/ZnO/ITO/WO3/TCTA/Alq3/TPBi/CsN3/Ag��
The foregoing is only the better embodiment of the present invention, not in order to limit the present invention, all any amendment, equivalent replacement and improvement etc. done within the spirit and principles in the present invention, all should be included within protection scope of the present invention.
Claims (4)
1. the preparation method of an organic electroluminescence device, it is characterised in that, comprise the following steps:
Cleaning substrate of glass is provided;
Preparing light removing layer on the glass substrate, described smooth removing layer comprises charcoal-aero gel layer and zinc oxide film:
The preparation process of described charcoal-aero gel layer, for mix in poly-3,4-bis-oxygen vinylthiophene and the polyphenyl sulfonate aqueous solution according to massfraction 1��20% by charcoal-aero gel, obtains mixed solution, is spin-coated in described substrate of glass by described mixed solution, then dries;
The preparation process of described zinc oxide film be by zinc oxide by electron beam evaporation plating on described charcoal-aero gel layer; The condition of described electron beam evaporation plating is energy density 10��100W/cm2;
On described zinc oxide film, magnetron sputtering transparent conductive film prepares anode again, and the condition of described magnetron sputtering is acceleration voltage 300��800V, magnetic field 50��200G, power density 1��40W/cm2;
On described anode, thermal resistance steaming is coated with standby hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively, and it is pressure 5 �� 10 that described thermal resistance steams plating condition-5��2 �� 10-3Pa, speed 0.1��1nm/s;
On described electron injecting layer, thermal resistance is steamed and is coated with standby negative electrode, and it is pressure 5 �� 10 that described thermal resistance steams plating condition-5��2 �� 10-3Pa, speed 1��10nm/s.
2. the preparation method of organic electroluminescence device as claimed in claim 1, it is characterized in that, described poly-3,4-bis-oxygen vinylthiophene and the polyphenyl sulfonate aqueous solution gather 3, the massfraction of 4-bis-oxygen vinylthiophene is 1%��5%, the mass ratio of described poly-3,4-bis-oxygen vinylthiophene and described polyphenyl sulfonate is 2: 1��6: 1.
3. the preparation method of organic electroluminescence device as claimed in claim 1, it is characterised in that, the particle diameter of described charcoal-aero gel is 10��100nm, and the particle diameter of described zinc oxide is 50��200nm.
4. the preparation method of organic electroluminescence device as claimed in claim 1, it is characterised in that, described substrate of glass be specific refractory power higher than 1.8 opticglass, and be that the transmitance of the visible ray of 400��700nm is greater than 90% to wavelength.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310059586.4A CN104009165B (en) | 2013-02-26 | 2013-02-26 | The preparation method of a kind of organic electroluminescence device |
| CN201610117475.8A CN105702859A (en) | 2013-02-26 | 2013-02-26 | Organic light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310059586.4A CN104009165B (en) | 2013-02-26 | 2013-02-26 | The preparation method of a kind of organic electroluminescence device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610117475.8A Division CN105702859A (en) | 2013-02-26 | 2013-02-26 | Organic light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104009165A CN104009165A (en) | 2014-08-27 |
| CN104009165B true CN104009165B (en) | 2016-06-08 |
Family
ID=51369742
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310059586.4A Expired - Fee Related CN104009165B (en) | 2013-02-26 | 2013-02-26 | The preparation method of a kind of organic electroluminescence device |
| CN201610117475.8A Pending CN105702859A (en) | 2013-02-26 | 2013-02-26 | Organic light-emitting device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610117475.8A Pending CN105702859A (en) | 2013-02-26 | 2013-02-26 | Organic light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN104009165B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109111662B (en) * | 2017-06-22 | 2020-07-10 | 华中科技大学 | Preparation method of carbon material conductive film |
| CN109980091A (en) * | 2019-04-04 | 2019-07-05 | 吉林大学 | A kind of Preparation method and use growing ZnO self-assembled nano structures |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1527648A (en) * | 2003-03-07 | 2004-09-08 | 财团法人工业技术研究院 | Organic electroluminesence device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005063839A (en) * | 2003-08-13 | 2005-03-10 | Toshiba Matsushita Display Technology Co Ltd | Optical device and organic electroluminescent display device |
| JP5005164B2 (en) * | 2004-03-03 | 2012-08-22 | 株式会社ジャパンディスプレイイースト | LIGHT EMITTING ELEMENT, LIGHT EMITTING DISPLAY DEVICE AND LIGHTING DEVICE |
| JP2006269163A (en) * | 2005-03-23 | 2006-10-05 | Konica Minolta Holdings Inc | Organic electroluminescent element |
| US7791271B2 (en) * | 2006-02-24 | 2010-09-07 | Global Oled Technology Llc | Top-emitting OLED device with light-scattering layer and color-conversion |
| EP2223353B8 (en) * | 2007-12-11 | 2018-08-29 | Lumileds Holding B.V. | Side-emitting, light emitting device with hybrid, top scattering-reflector |
| JP5028366B2 (en) * | 2008-09-11 | 2012-09-19 | 株式会社ジャパンディスプレイイースト | Organic light emitting device |
| CN101562077B (en) * | 2009-05-11 | 2011-05-04 | 湘潭大学 | Carbon aerogel composite pair electrode used for dye-sensitized solar cell and preparation method thereof |
| KR101094298B1 (en) * | 2009-08-18 | 2011-12-19 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display |
| CN102468444B (en) * | 2010-11-16 | 2015-09-09 | 海洋王照明科技股份有限公司 | A kind of organic electroluminescence device and preparation method thereof |
-
2013
- 2013-02-26 CN CN201310059586.4A patent/CN104009165B/en not_active Expired - Fee Related
- 2013-02-26 CN CN201610117475.8A patent/CN105702859A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1527648A (en) * | 2003-03-07 | 2004-09-08 | 财团法人工业技术研究院 | Organic electroluminesence device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104009165A (en) | 2014-08-27 |
| CN105702859A (en) | 2016-06-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104009165B (en) | The preparation method of a kind of organic electroluminescence device | |
| CN104009178A (en) | Organic electroluminescent device and preparation method | |
| CN104124367A (en) | Organic light-emitting device and preparation method thereof | |
| CN104009179A (en) | Organic electroluminescent device and preparation method | |
| CN104347801A (en) | Organic electroluminescence appliance and preparing method of organic electroluminescence appliance | |
| CN104124362A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124363A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124365A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124343A (en) | Organic light-emitting device and preparation method thereof | |
| CN103682125A (en) | Organic light-emitting device and preparation method thereof | |
| CN104009164A (en) | Organic electroluminescent device and preparation method | |
| CN104009168A (en) | Organic electroluminescent device and preparation method | |
| CN104051663A (en) | Organic electroluminescent device and manufacturing method thereof | |
| CN104124392A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124393A (en) | Organic light-emitting device and preparation method thereof | |
| CN104051664A (en) | Organic electroluminescent device and manufacturing method thereof | |
| CN104124395A (en) | Organic light-emitting device and preparation method thereof | |
| CN104009183A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104124357A (en) | Organic light-emitting device and preparation method thereof | |
| CN104051658A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124356A (en) | Organic light-emitting device and preparation method thereof | |
| CN104051644A (en) | Organic electroluminescent device and manufacturing method thereof | |
| CN104051656A (en) | Organic light-emitting device and preparation method thereof | |
| CN104051661A (en) | Organic electroluminescent device and manufacturing method thereof | |
| CN104124381A (en) | Organic electroluminescent device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160128 Address after: 530700 the Guangxi Zhuang Autonomous Region Hechi Du'an Yao Autonomous County of Chengjiang township six village 5 teams of ancient people Applicant after: Wei Lishu Address before: 518104, building four, building 403, building A3, manholes Industrial Zone, manhole community, Gonghe subdistrict, Gonghe, Shenzhen, Guangdong, Baoan District Applicant before: SHENZHEN OUKELI TECHNOLOGY Co.,Ltd. Effective date of registration: 20160128 Address after: 518104, building four, building 403, building A3, manholes Industrial Zone, manhole community, Gonghe subdistrict, Gonghe, Shenzhen, Guangdong, Baoan District Applicant after: SHENZHEN OUKELI TECHNOLOGY Co.,Ltd. Address before: 518000 Guangdong city of Shenzhen province A Nanshan District Haiwang building Nanhai Road Block 22 layer Applicant before: OCEAN'S KING LIGHTING SCIENCE & TECHNOLOGY Co.,Ltd. Applicant before: Shenzhen Haiyangwang Illumination Technology Co.,Ltd. Applicant before: SHEN ZHEN OCEAN'S KING LIGHTING ENGINEERING Co.,Ltd. |
|
| C14 | Grant of patent or utility model | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Li Feng Inventor after: Ma Chengbin Inventor after: Zhang Yuqi Inventor after: Wang Xin Inventor after: Yang Jing Inventor after: Chen Na Inventor after: Qiu Yong Inventor after: Yan Bingsheng Inventor after: Li Hao Inventor after: Ma Li Inventor after: Zhang Changbin Inventor after: Wang Yisheng Inventor after: Yang Hongchang Inventor after: Jiang Benfeng Inventor before: Zhou Mingjie Inventor before: Wang Ping Inventor before: Huang Hui |
|
| COR | Change of bibliographic data | ||
| GR01 | Patent grant | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160517 Address after: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Applicant after: State Grid Corporation of China Applicant after: SISHUI POWER SUPPLY COMPANY OF STATE GRID SHANDONG ELECTRIC POWER CO. Address before: 530700 the Guangxi Zhuang Autonomous Region Hechi Du'an Yao Autonomous County of Chengjiang township six village 5 teams of ancient people Applicant before: Wei Lishu |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160608 Termination date: 20170226 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |