CN104009117A - Flexible thin film solar cell and preparing method thereof - Google Patents
Flexible thin film solar cell and preparing method thereof Download PDFInfo
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- CN104009117A CN104009117A CN201410205272.5A CN201410205272A CN104009117A CN 104009117 A CN104009117 A CN 104009117A CN 201410205272 A CN201410205272 A CN 201410205272A CN 104009117 A CN104009117 A CN 104009117A
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- 239000010409 thin film Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 48
- 238000002360 preparation method Methods 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000013081 microcrystal Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 229920003023 plastic Polymers 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000004033 plastic Substances 0.000 description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 238000005496 tempering Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparing method of a flexible thin film solar cell. The preparing method includes the steps that a first transparent conducting layer is formed on flexible glass fixed to a glass carrier, and a first opening is formed in the first transparent conducting layer; an emitting electrode thin film covering the first opening is formed on the first transparent conducting layer, and a second opening is formed; a second transparent conducting layer covering the second opening is formed on the emitting electrode thin film, and third openings are formed in the second transparent conducting layer and the emitting electrode thin film; a first flexible bonding layer is formed on the second transparent conducting layer; a first flexible thin plate is formed on the first flexible bonding layer; the structure is packaged, and the glass carrier is removed after packaging is conducted. Accordingly, the invention further provides the flexible thin film solar cell prepared through the preparing method. By means of the technical scheme, the debris rate of flexible thin film solar cell preparation can be effectively decreased, production efficiency is improved, and cell strength is enhanced.
Description
Technical field
The manufacture field that the invention belongs to thin-film solar cells, relates in particular to a kind of flexible thin-film solar cell and preparation method thereof.
Background technology
Along with being rooted in the hearts of the people of energy-conserving and environment-protective theory and developing rapidly of photovoltaic field, the technology of generating electricity with solar cell is constantly progressive, and the development of thin-film solar cells, particularly flexible thin-film solar cell has obtained marked improvement.But the substrate of existing flexible thin-film solar cell mostly is not Steel material thoroughly, in its preparation process, is difficult to realize the structure of a plurality of battery series connection on same substrate, and can only makes single flexible battery structure.Like this, when practical application, single battery need to be connected improve the use voltage of battery applications.This method has strengthened the processing preparation section of flexible solar battery application product to a great extent, and complexity is high.In addition, take the flexible solar battery that steel is not substrate thoroughly can not realize transparent effect.
At present, take the silicon-base thin-film battery industrialization technology that clear glass is substrate also quite ripe.Can be made into the battery component of a plurality of battery series connection, after these battery component encapsulation, can directly apply.Its preparation temperature is generally 200 ℃ of left and right, require simultaneously selected clear glass to specific laser without obvious absorption.
Transparent plastic has transparent and flexible feature concurrently, can be used as the candidate materials of flexible and transparent hull cell substrate.But the plastics of high-permeability, as plastics such as PET, PE, are generally being difficult to bear the high temperature of 200 ℃, therefore aspect silicon-base thin-film battery, be difficult to application.And resistant to elevated temperatures plastics, as PI etc., can obviously absorb for the laser of specific wavelength, as being 355nm for wavelength, absorptivity can reach more than 85%, can cause like this laser not realize the effect to transparency conducting layer TCO line insulation by PI.
Therefore, not there is having concurrently high temperature resistant and flexible material high light transmittance, or in silicon-base thin-film battery technique, do not have novelly under the prerequisite of the effective insulation technology of TCO conductive layer, there is huge challenge in preparation film battery assembly flexible and that connected by a plurality of batteries on same substrate.
Summary of the invention
The invention provides a kind of flexible thin-film solar cell of making a plurality of battery series connection on same substrate.
According to an aspect of the present invention, provide a kind of preparation method of flexible thin-film solar cell, described preparation method comprises step:
Step S101, it is on the glass carrier on 2～4mm that flexible glass is fixed on to thickness;
Step S102 forms the first transparency conducting layer in described flexible glass, and forms the first opening on described the first transparency conducting layer;
Step S103 forms emitter film on described the first transparency conducting layer, and described emitter film covers described the first opening, and on described emitter film, is close to described the first opening and forms the second opening;
Step S104 forms the second transparency conducting layer on described emitter film, and described the second transparency conducting layer covers described the second opening, and forms the 3rd opening on described the second transparency conducting layer and described emitter film;
Described the 3rd opening is close to described the second opening, and away from described the first opening;
Step S105 forms the first flexible adhesion layer on described the second transparency conducting layer;
Step S106 forms the first flexible thin on described the first flexible adhesion layer;
Step S107, encapsulates described flexible glass, the first transparency conducting layer, emitter film, the second transparency conducting layer, the first flexible adhesion layer and the first flexible thin, removes described glass carrier after encapsulation.
According to a specific embodiment of the present invention, after described step S107, also comprise:
Step 108, forms the second flexible adhesion layer and the second flexible thin successively at the another side of described flexible glass;
Step 109, encapsulates described flexible thin-film solar cell.
According to another aspect of the present invention, a kind of flexible thin-film solar cell is provided, and described flexible thin-film solar cell comprises from the bottom to top successively: flexible glass, the tandem thin-film battery being comprised of the first transparency conducting layer, emitter film and the second transparency conducting layer, the first flexible adhesion layer and the first flexible thin; Described flexible thin-film solar cell adopts preparation method's preparation provided by the invention.
According to a specific embodiment of the present invention, the opposite side in described flexible glass with respect to described tandem thin-film battery comprises successively: the second flexible adhesion layer and the second flexible thin.
The thickness that the present invention adopts has larger deformable amount in the flexible glass of 0.03～0.75mm, within the specific limits can be curling and show as flexibility; Simultaneously due to glass transparent, very little to the absorption of laser, can realize with traditional conventional silicon-base thin-film battery technique in the effect of laser scribing insulation.
Because the thickness of flexible glass is very little, thereby mechanical strength is very little, frangible.In battery preparation process, flexible glass is placed on heavy sheet glass carrier, can effectively avoid the fragmentation of flexible glass, thereby meet the requirement in battery preparation process mechanical transfer.When preparing in flexible glass after battery structure, bonding by flexible adhesion layer and flexible thin material, not only can complete the encapsulation of hull cell, and its mechanical strength of what is more important obviously strengthens, get rid of still can meet that finished product solar cell shifts after heavy sheet glass carrier, transportation and the requirement used.
Accompanying drawing explanation
By reading the detailed description that non-limiting example is done of doing with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Figure 1 shows that according to the schematic flow sheet of the preparation method of a kind of flexible thin-film solar cell provided by the invention embodiment;
Figure 2 shows that according to the schematic flow sheet of another embodiment of the preparation method of a kind of flexible thin-film solar cell provided by the invention;
Fig. 3～Figure 12 shows that according to the structural representation in the forming process of a kind of flexible thin-film solar cell provided by the invention.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Embodiment
Disclosing below provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and object clearly, itself do not indicate the relation between discussed various embodiment and/or setting.It should be noted that illustrated parts are not necessarily drawn in proportion in the accompanying drawings.The present invention has omitted the description of known assemblies and treatment technology and technique to avoid unnecessarily limiting the present invention.
With reference to figure 1, Figure 1 shows that according to the schematic flow sheet of the preparation method of a kind of flexible thin-film solar cell provided by the invention embodiment.
Step S101, it is on the glass carrier 100 on 2～4mm, as shown in Figure 3 that flexible glass 210 is fixed on to thickness.Preferably, the thickness of described flexible glass 210 is 0.03mm～0.75mm, for example: 0.03mm, 0.1mm, 0.3mm or 0.75mm.Preferably, in order to increase the hardness of the flexible thin-film solar cell of preparation, described flexible glass 210 is the thin glass of chemical method tempering.
With reference to figure 4 and Fig. 5, execution step S102 forms the first transparency conducting layer 310, and form the first opening on described the first transparency conducting layer 310 in described flexible glass 210.
The formation of the first transparency conducting layer (Transparent Conductive Oxide, TCO) 310 can adopt low temperature chemical vapor deposition method (LPCVD) the deposit transparent oxide material of the desirable energy science and technology of Oerlikon hull cell production system or Shanghai and form.Optionally, the material that forms described the first transparency conducting layer 310 comprises: tin oxide, tin indium oxide, indium oxide, boron-doping zinc oxide, Al-Doped ZnO and/or gallium-doped zinc oxide.Preferably adopt boron-doping zinc oxide (ZnO) to prepare the first transparency conducting layer 310.
Preferably, adopt the mode of laser burn to form the first opening on the first transparency conducting layer 310.Preferably, adopt the Ultra-Violet Laser that wavelength is 355nm to realize the formation to the first opening.
Step S103 forms emitter film 410 on described the first transparency conducting layer 310, and described emitter film 410 covers described the first opening, as shown in Figure 6.
Optionally, described emitter film 410 comprises one or more in amorphous silicon, microcrystal silicon, polysilicon and monocrystalline silicon thin film.Described amorphous silicon, microcrystal silicon, polysilicon or monocrystalline silicon thin film form the unijunction structure that comprises a p-n junction, n-p knot, p-i-n knot or n-i-p knot, or form the multijunction structure that comprises a plurality of p-n junctions, n-p knot, p-i-n knot or n-i-p knot.
The emitter film 410 with p-i-n structure that the amorphous silicon (a-Si) of take forms is example, it can adopt PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) mode deposit p-type, i type, three layers of amorphous silicon of N-shaped and obtain.Preferably, as need regulate light transmittance, can adjust the thickness of i layer (intrinsic layer) and adjust light transmittance.
With reference to figure 7, on described emitter film 410, be close to described the first opening and form the second opening afterwards.Preferably, adopt the mode of laser burn on emitter film 410, to form the second opening.Preferably, adopt the green laser that wavelength is 532nm to realize the formation to the second opening.
Step S104, as shown in Figure 8, on described emitter film, 410 form the second transparency conducting layer 320, and described the second transparency conducting layer 320 covers described the second opening.
Optionally, the second transparency conducting layer 320 can form by low temperature chemical vapor deposition method (LPCVD) deposition.
Optionally, the material of formation the second transparency conducting layer 320 comprises: tin oxide, tin indium oxide, indium oxide, boron-doping zinc oxide, Al-Doped ZnO and/or gallium-doped zinc oxide.Preferably adopt boron-doping zinc oxide (ZnO) to prepare the second transparency conducting layer 320.
With reference to figure 9, and form the 3rd opening on described the second transparency conducting layer 320 and described emitter film 410.It should be noted that described the 3rd opening is close to described the second opening, and away from described the first opening.The second opening is in centre, and the first opening and the 3rd opening divide the both sides that are listed in the second opening.The formation of the 3rd opening can make thin-film solar cells form cascaded structure.
Preferably, adopt the mode of laser burn on the second transparency conducting layer 320 and emitter film 410, to form the 3rd opening.Preferably, adopt the green laser that wavelength is 532nm to realize the formation to the 3rd opening.
After forming the 3rd opening, continue execution step S105, with reference to Figure 10, on described the second transparency conducting layer 320, lay the first flexible adhesion layer 510.Optionally, the formation material of the first flexible adhesion layer 510 includes but not limited to: PVB (PolyVinyl Butyral), EVA (ethylene-vinyl acetate copolymer) or transparent silicon resin film.
Step S106 lays the first flexible thin 610 on described the first flexible adhesion layer 510.Optionally, the formation material of described the first flexible thin 610 includes but not limited to: silica gel, resin, polyethylene kind, fluorine-contained film and the smooth light-passing plastic membrane material with suede structure etc.
Step S107, carries out laminating packaging to described flexible glass 210, the first transparency conducting layer 310, emitter film 410, the second transparency conducting layer 320, the first flexible adhesion layer 510 and the first flexible thin 610.After encapsulation, remove described glass carrier 100, as shown in figure 11.After encapsulation, form required flexible thin-film solar cell, owing to having formed each required layer in flexible glass 210, therefore removed after glass carrier 100, also can not affect the intensity of flexible thin-film solar cell.
Although the mechanical strength of flexible thin-film solar cell has met the requirement of the links such as application, loading, transportation, in order to make the mechanical strength of thin-film solar cells stronger, further reduce fragment rate, preferably, with reference to figure 2, after described step S107, also comprise:
Step 108 forms successively the second flexible adhesion layer 520 and the second flexible thin 530 in described flexible glass 210.As shown in figure 12, the second flexible adhesion layer 520 and the second flexible thin 530 are formed in flexible glass 210, with respect to the opposite side of first transparency conducting layer 310 other layers such as grade.
Optionally, the formation material of the second flexible adhesion layer 520 includes but not limited to: PVB (PolyVinylButyral), EVA (ethylene-vinyl acetate copolymer) or transparent silicon resin film.
Optionally, the formation material of described the second flexible thin 620 includes but not limited to: silica gel, resin, polyethylene kind, fluorine-contained film and the smooth light-passing plastic membrane material with suede structure etc.
Step 109, carries out laminating packaging to described flexible thin-film solar cell.Preferably, adopt the mode of lamination to encapsulate, use solar module laminating machine to carry out laminating packaging, complete the making of flexible thin-film battery.Flexible solar battery that above-mentioned manufacture method provides is simple in structure, easily realize, and has the prospect of large-scale application.
The present invention also provides a kind of flexible thin-film solar cell that adopts said method provided by the invention to prepare.This flexible thin-film solar cell comprises from the bottom to top successively: flexible glass 210, the tandem thin-film battery being comprised of the first transparency conducting layer 310, emitter film 410 and the second transparency conducting layer 320, the first flexible adhesion layer 510 and the first flexible thin 520.
Preferably, in order to increase the mechanical strength of flexible thin-film solar cell, further reduce fragment rate, opposite side in described flexible glass 210 with respect to described tandem thin-film battery also comprises successively: the second flexible adhesion layer 520 and the second flexible thin 620, namely carry out bilateral encapsulation to flexible thin-film solar cell.
Optionally, described emitter film 410 comprises one or more in amorphous silicon, microcrystal silicon, polysilicon and monocrystalline silicon thin film.Described amorphous silicon, microcrystal silicon, polysilicon or monocrystalline silicon thin film form the unijunction structure that comprises a p-n junction, n-p knot, p-i-n knot or n-i-p knot, or form the multijunction structure that comprises a plurality of p-n junctions, n-p knot, p-i-n knot or n-i-p knot.
Preferably, the thickness of described flexible glass is 0.03mm～0.75mm, for example: 0.03mm, 0.05mm, 0.1mm, 0.3mm or 0.75mm.
Because the claimed flexible thin-film solar cell of the present invention is to adopt the preparation method of flexible thin-film solar cell disclosed by the invention to prepare; therefore associated description that all can REFERENCE TO RELATED text about features such as materials used in this flexible thin-film solar cell structure, just repeats no more at this.
Because the thickness as the flexible glass of flexible thin-film solar cell substrate is very little in the present invention, so its mechanical strength is low and frangible.The present invention, in the preparation process of solar cell, places it in on heavy sheet glass carrier, has effectively avoided the fragmentation of flexible glass 210 substrates, thereby has met the requirement of glass substrate in battery preparation process mechanical transfer.When making in flexible glass after battery structure, bonding by flexible adhesion layer and flexible thin material, not only can complete the encapsulation of hull cell, can also make its mechanical strength obviously strengthen, meet the requirement that finished product solar cell shifts, transports and use.
Although describe in detail about example embodiment and advantage thereof, be to be understood that in the situation that do not depart from the protection range that spirit of the present invention and claims limit, can carry out various variations, substitutions and modifications to these embodiment.For other examples, when those of ordinary skill in the art should easily understand within keeping protection range of the present invention, the order of processing step can change.
In addition, range of application of the present invention is not limited to technique, mechanism, manufacture, material composition, means, method and the step of the specific embodiment of describing in specification.From disclosure of the present invention, as those of ordinary skill in the art, will easily understand, for the technique, mechanism, manufacture, material composition, means, method or the step that have existed or be about to develop at present later, wherein they carry out identical function or the identical result of acquisition cardinal principle of corresponding embodiment cardinal principle of describing with the present invention, according to the present invention, can apply them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection range.
Claims (10)
1. a preparation method for flexible thin-film solar cell, is characterized in that, described preparation method comprises step:
A) flexible glass being fixed on to thickness is on the glass carrier on 2～4mm;
B) in described flexible glass, form the first transparency conducting layer, and form the first opening on described the first transparency conducting layer;
C) on described the first transparency conducting layer, form emitter film, described emitter film covers described the first opening, and on described emitter film, is close to described the first opening and forms the second opening;
D) on described emitter film, form the second transparency conducting layer, described the second transparency conducting layer covers described the second opening, and forms the 3rd opening on described the second transparency conducting layer and described emitter film;
Described the 3rd opening is close to described the second opening, and away from described the first opening;
E) on described the second transparency conducting layer, form the first flexible adhesion layer;
F) on described the first flexible adhesion layer, form the first flexible thin;
G) described flexible glass, the first transparency conducting layer, emitter film, the second transparency conducting layer, the first flexible adhesion layer and the first flexible thin are encapsulated, after encapsulation, remove described glass carrier.
2. preparation method according to claim 1, is characterized in that, in described step g) also comprise afterwards step:
H) another side in described flexible glass forms the second flexible adhesion layer and the second flexible thin successively;
I) described flexible thin-film solar cell is encapsulated.
3. preparation method according to claim 1 and 2, is characterized in that, the thickness of described flexible glass is 0.03mm～0.75mm.
4. preparation method according to claim 3, is characterized in that, adopts the mode of laser burn to form described the first opening, described the second opening and described the 3rd opening.
5. preparation method according to claim 4, is characterized in that, adopts the laser that wavelength is 355nm to form described the first opening; Adopt the laser that wavelength is 532nm to form described the second opening and described the 3rd opening.
6. preparation method according to claim 1 and 2, is characterized in that, described emitter film comprises one or more in amorphous silicon, microcrystal silicon, polysilicon and monocrystalline silicon thin film;
Described amorphous silicon, microcrystal silicon, polysilicon or monocrystalline silicon thin film form the unijunction structure that comprises a p-n junction, n-p knot, p-i-n knot or n-i-p knot, or form the multijunction structure that comprises a plurality of p-n junctions, n-p knot, p-i-n knot or n-i-p knot.
7. a flexible thin-film solar cell, described flexible thin-film solar cell comprises from the bottom to top successively: flexible glass, the tandem thin-film battery being comprised of the first transparency conducting layer, emitter film and the second transparency conducting layer, the first flexible adhesion layer and the first flexible thin;
It is characterized in that,
Described flexible thin-film solar cell adopts any one preparation method's preparation in claim 1～6.
8. flexible thin-film solar cell according to claim 7, is characterized in that, the opposite side in described flexible glass with respect to described tandem thin-film battery comprises successively: the second flexible adhesion layer and the second flexible thin.
9. according to the flexible thin-film solar cell described in claim 7 or 8, it is characterized in that, described emitter film comprises one or more in amorphous silicon, microcrystal silicon, polysilicon and monocrystalline silicon thin film;
Described amorphous silicon, microcrystal silicon, polysilicon or monocrystalline silicon thin film form the unijunction structure that comprises a p-n junction, n-p knot, p-i-n knot or n-i-p knot, or form the multijunction structure that comprises a plurality of p-n junctions, n-p knot, p-i-n knot or n-i-p knot.
10. according to the flexible thin-film solar cell described in claim 7 or 8, it is characterized in that, the thickness of described flexible glass is 0.03mm～0.75mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410205272.5A CN104009117B (en) | 2014-05-15 | 2014-05-15 | Flexible thin film solar cell and preparing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410205272.5A CN104009117B (en) | 2014-05-15 | 2014-05-15 | Flexible thin film solar cell and preparing method thereof |
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| Publication Number | Publication Date |
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| CN104009117A true CN104009117A (en) | 2014-08-27 |
| CN104009117B CN104009117B (en) | 2017-02-01 |
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Citations (4)
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| US20060151023A1 (en) * | 2003-07-22 | 2006-07-13 | Akzo Nobel Nv | Process for manufacturing a solar cell foil using a temporary substrate |
| US20080264478A1 (en) * | 2007-02-26 | 2008-10-30 | Lg Electronics Inc. | Thin-film solar cell and method of manufacturing the same |
| CN101924156A (en) * | 2009-06-11 | 2010-12-22 | 亚洲太阳科技有限公司 | Hybrid serial or parallel thin film solar cell and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1202742A (en) * | 1997-06-17 | 1998-12-23 | 深圳日月环太阳能实业有限公司 | Method of producing intraconnected integrated amorphous-silicon solar cell |
| US20060151023A1 (en) * | 2003-07-22 | 2006-07-13 | Akzo Nobel Nv | Process for manufacturing a solar cell foil using a temporary substrate |
| US20080264478A1 (en) * | 2007-02-26 | 2008-10-30 | Lg Electronics Inc. | Thin-film solar cell and method of manufacturing the same |
| CN101924156A (en) * | 2009-06-11 | 2010-12-22 | 亚洲太阳科技有限公司 | Hybrid serial or parallel thin film solar cell and manufacturing method thereof |
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