CN104007588A - Pixel structure, display device and manufacturing method - Google Patents
Pixel structure, display device and manufacturing method Download PDFInfo
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- CN104007588A CN104007588A CN201410228190.2A CN201410228190A CN104007588A CN 104007588 A CN104007588 A CN 104007588A CN 201410228190 A CN201410228190 A CN 201410228190A CN 104007588 A CN104007588 A CN 104007588A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Optical Filters (AREA)
Abstract
The invention discloses a pixel structure, a display device and a manufacturing method thereof. A metal data line, a black matrix, a first electrode layer and a second electrode layer are arranged in the pixel structure. Orthographic projection of the metal data line completely covers the black matrix, the first electrode layer and the second electrode layer are sequentially arranged between the metal data line and the black matrix, the first electrode layer is a plate electrode, the second electrode layer is a slit electrode, the non-overlapping area of the first electrode layer and the second electrode layer corresponds to the black matrix and the metal data line, and a gap is arranged in the first electrode layer arranged close to the metal data line at the position corresponding to the edge of the black matrix. By means of the pixel structure, the display device and the manufacturing method, the possibility that a pixel electrode and a public electrode are close to the opposite edge electric field can be reduced, and color mixing cannot happen easily under the condition that the black matrix is out of position.
Description
Technical field
The invention belongs to technical field of liquid crystal display, particularly a kind of dot structure, display device and manufacture method.
Background technology
Thin Film Transistor-LCD (TFT-LCD) is mainly divided into twisted nematic (Twist Nematic according to display mode, TN), vertical orientation (Vertical Align, VA), Plane Rotation (In Plane Switch, IPS) pattern, wherein after both wide visual angle technology that be current main flow, substantially solved TN pattern visual angle narrower with the serious problem of gray-scale inversion.
Senior super Wei Chang conversion (ADSDS, ADvanced Super Dimension Switch, be called for short ADS) the electric field formation multi-dimensional electric field that produces by electric field that in same plane, gap electrode edge produces and gap electrode layer and plate electrode interlayer of technology, make in liquid crystal cell between gap electrode, directly over electrode, all aligned liquid-crystal molecules can both produce rotation, thereby improved liquid crystal work efficiency and increased light transmission efficiency.Senior super dimension field switch technology can improve the picture quality of TFT-LCD product, has high resolving power, high permeability, low-power consumption, wide visual angle, high aperture, low aberration, without advantages such as water of compaction ripples (Push Mura).
Along with improving constantly of product resolution, the size of pixel is more and more less, requires also to improve constantly, so black matrix width reduces as far as possible for pixel aperture ratio; Public electrode due to ADS product is generally indium tin oxide (ITO) making simultaneously, wherein ITO resistance is higher, in order to reduce resistance capacitance (RC), postpone and increase memory capacitance, the area that can increase as far as possible public electrode when design public electrode, general ITO and data line can complete Overlap designs.
As shown in Figure 1, for existing high-resolution ADS dot structure vertical view, this vertical view is as just schematic diagram, in one plane illustrate relative position relation between various piece, wherein, 16 represent that the second electrode lay is pixel electrode, and 12 represent data line metal, and 22 represent to be positioned at the black matrix of data line metal 12 tops.
As shown in Figure 2, be the schematic cross-section of existing dot structure along A-B: wherein 11 is that incident is backlight; 12 is data line metal; 13 is organic flatness layer, generally adopts resin material to make; 14 is the first electrode layer, can be set to public electrode; 15 is insulation course, generally adopts silicon nitride material to make; 16 is the second electrode lay, can be set to pixel electrode.Wherein 21 for passing through the emergent light of color membrane substrates colored filter; 22 is the black matrix of color membrane substrates, generally adopts resin material to make, and the black matrix width of high-resolution products is generally less than 6.0um; 23 is color membrane substrates colored filter (for example red/green/blue pixel), usually adopts resin material to make; 24 is color membrane substrates flatness layer, generally adopts resin material to make.Wherein 31 is array base palte and the middle liquid crystal layer of color membrane substrates, and long axis of liquid crystal molecule can rotate along parallel electric field direction; 32 is the fringe field that pixel electrode and public electrode produce, and in electric field action region, liquid crystal molecule can deflect, and has emergent light, and during without electric field action, liquid crystal molecule zero deflection, without emergent light.
As shown in Figure 3, because the black matrix width of high-resolution products is generally all less than 6.0um, the overlapping width of black matrix 22 and data line metal 12 is less.If color membrane substrates and array base palte are to box during to a side generation slight shift, the fringe field scope that pixel electrode and public electrode form can approach and even exceed black matrix opposite side, i.e. the scope of liquid crystal layer deflection can approach and even exceed black matrix opposite side.When LCD shows separately red, green, blue picture, a sub-pix loads data voltage, and adjacent sub-pix is on-load voltage not.Beyond the emergent light 21 of first pixel, in black matrix 22 1 sides near neighbor, have slighter emergent light 25, therefore can cause the monochromatic emergent light (as red) of first pixel and the outgoing monochromatic light (as green) of neighbor that colour mixture (as yellow) occurs, this problem can be more serious in the situation of side-looking angle.
Summary of the invention
(1) technical matters that will solve
The technical problem to be solved in the present invention is: the dot structure, display device and the manufacture method that propose an a kind of senior super dimension display mode, can reduce pixel electrode and public electrode near the fringe field on opposite, in the situation that black matrix has skew, be not easy to occur colour mixture.
(2) technical scheme
In order to solve the problems of the technologies described above, the present invention proposes a kind of dot structure, in described dot structure, be provided with data line metal, black matrix, the first electrode layer and the second electrode lay, the orthogonal projection of described data line metal covers in described black matrix completely, between described data line metal and described black matrix, be disposed with the first electrode layer and the second electrode lay, described the first electrode layer is plate electrode, described the second electrode lay is slit-shaped electrode, the Non-overlapping Domain of described the first electrode layer and described the second electrode lay is corresponding to described black matrix and described data line metal, it is characterized in that, near the position corresponding to black matrix edge place in the first electrode layer of described data line metal setting, be provided with space.
Wherein, near the position corresponding to black matrix Liang Ge edge in described first electrode layer of described data line metal setting, be respectively provided with a space.
Wherein, the A/F in wherein said every space is 1.0～2.0um.
Wherein, described the first electrode layer is public electrode, and the second electrode lay is pixel electrode.
Wherein, described pixel electrode and described public electrode Non-overlapping Domain width are 2.0～4.0um.
The invention allows for a kind of display device, comprise array base palte and color membrane substrates and be located in liquid crystal layer therebetween, described display device comprises above-mentioned any one dot structure, described data line metal, the first electrode layer and the second electrode lay are successively set in array base palte, and described black arranged in matrix is in described color membrane substrates.
The manufacture method that the invention allows for a kind of dot structure, comprising: the step that forms data line metal, black matrix, the first electrode layer and the second electrode lay;
Wherein, the orthogonal projection of described data line metal covers in described black matrix completely, between described data line metal and black matrix, be disposed with the first electrode layer and the second electrode lay, the first electrode layer is plate electrode, the second electrode lay is slit-shaped electrode, the Non-overlapping Domain of described the first electrode layer and described the second electrode lay, corresponding to described black matrix and described data line metal, is provided with space near the position corresponding to black matrix edge place in described first electrode layer of described data line metal setting.
Wherein, near the position corresponding to black matrix Liang Ge edge in described first electrode layer of described data line metal setting, be respectively provided with a space.
Wherein, the A/F in wherein said every space is 1.0～2.0um.
Wherein, described the first electrode layer is public electrode, and the second electrode lay is pixel electrode, and described pixel electrode and described public electrode Non-overlapping Domain width are 2.0～4.0um.
(3) beneficial effect
According to dot structure of the present invention, display device and manufacture method, can reduce pixel electrode and public electrode near the fringe field on opposite, therefore the black matrix opposite side of liquid crystal deflecting element range distance has certain distance, in the situation that black matrix has skew, is not easy to occur colour mixture.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only examples more of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the dot structure vertical view of prior art middle high-resolution ADS;
Fig. 2 is that structure in Fig. 1 is along the schematic cross-section of A-B direction;
Fig. 3 is the Electric Field Distribution schematic diagram of prior art middle high-resolution ADS;
Fig. 4 is the dot structure vertical view of the embodiment of the present invention;
Fig. 5 is that the dot structure of the embodiment of the present invention is along the schematic cross-section of C-D direction.
Description of reference numerals in above-mentioned figure is as follows:
11: incident is backlight; 12: data line metal; 13: organic flatness layer; 14: the first electrode layers; 15: insulation course; 16: the second electrode lay; 17: space; 21: emergent light; 22: black matrix; 23: pixel; 24: color membrane substrates flatness layer; 25: emergent light; 31: liquid crystal; 32,33: fringe field.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, ordinary skill people, not making the every other embodiment obtaining under creative work prerequisite, belongs to the scope of protection of the invention.
A kind of dot structure has been proposed in embodiments of the invention, in this dot structure, be provided with data line metal, black matrix, the first electrode layer and the second electrode lay, the orthogonal projection of data line metal covers in black matrix completely, between data line metal and black matrix, be disposed with the first electrode layer and the second electrode lay, the first electrode layer is plate electrode, the second electrode lay is slit-shaped electrode, the Non-overlapping Domain of the first electrode layer and the second electrode lay is corresponding to black matrix and data line metal, by the position corresponding to black matrix edge place in the first electrode layer of data line metal setting, be provided with space.By this dot structure, can reduce the first electrode layer and the second electrode lay near the fringe field on opposite, so the black matrix opposite side of liquid crystal deflecting element range distance there is certain distance, in the situation that black matrix has skew, be not easy to occur colour mixture.
In dot structure, near the position corresponding to black matrix Liang Ge edge in the first electrode layer of data line metal setting, be respectively provided with a space, wherein the A/F in every space is 1.0～2.0um.By the setting of two spaces and A/F, can further reduce the first electrode layer and the second electrode lay near the fringe field on opposite, obtain more excellent visual effect.It should be noted that, in the present invention, can be provided with at least one space in the position corresponding to black matrix Yi Ge edge, this is not restricted, as long as gap can be set by the edge corresponding to black matrix, can realize and reduce fringe field.
In dot structure, the first electrode layer is public electrode, and the second electrode lay is pixel electrode, and pixel electrode and public electrode Non-overlapping Domain width are 2.0～4.0um.By the setting of public electrode, pixel electrode Non-overlapping Domain width, and and space A/F between size relationship, can guarantee that pixel electrode and public electrode obtain fully and reduce near the fringe field on opposite.
A kind of display device has also been proposed in embodiments of the invention, comprise array base palte and color membrane substrates and be located in liquid crystal layer therebetween, display device comprises above-mentioned any one dot structure, data line metal, the first electrode layer and the second electrode lay are successively set in array base palte, and black arranged in matrix is in color membrane substrates.
In embodiments of the invention, also proposed a kind of manufacture method of dot structure, having comprised: the step that forms data line metal, black matrix, the first electrode layer and the second electrode lay;
Wherein, the orthogonal projection of data line metal covers in black matrix completely, between data line metal and black matrix, be disposed with the first electrode layer and the second electrode lay, the first electrode layer is plate electrode, the second electrode lay is slit-shaped electrode, the Non-overlapping Domain of the first electrode layer and the second electrode lay, corresponding to black matrix and data line metal, is provided with space near the position corresponding to black matrix edge place in the first electrode layer of data line metal setting.
In the manufacture method of dot structure of the present invention, near the position corresponding to black matrix Liang Ge edge in the first electrode layer of data line metal setting, be respectively provided with a space, the A/F in wherein said every space is 1.0～2.0um, wherein, the first electrode layer is public electrode, the second electrode lay is pixel electrode, and pixel electrode and public electrode Non-overlapping Domain width are 2.0～4.0um.By the setting of two spaces and A/F, can further reduce pixel electrode and public electrode near the fringe field on opposite, obtain more excellent visual effect, can guarantee that pixel electrode and public electrode obtain reduction fully near the fringe field on opposite simultaneously.
As shown in Figure 4, vertical view for dot structure in the embodiment of the present invention, this vertical view is as just schematic diagram, in one plane illustrates relative position relation between various piece, wherein, in described dot structure, there is the first electrode layer 14, can be set to plate electrode, and the second electrode lay 16, can be set to slit-shaped electrode, the first electrode layer 14 arranges with the second electrode lay 16 insulation.The black matrix 22 that this dot structure also comprises data line metal 12 and is positioned at data line metal 12 tops, wherein the first electrode layer 14 has space 17 in the region corresponding to black matrix 22.The first electrode layer 14 and the second electrode lay 16 are set to public electrode and pixel electrode, and when the first electrode layer 14 is public electrode, the second electrode lay 16 is pixel electrode; When the first electrode layer 14 is pixel electrode, the second electrode lay 16 is public electrode.
As shown in Figure 5, for the schematic cross-section of dot structure in Fig. 4 along C-D direction, wherein have data line metal 12, generally adopt molybdenum to make, thickness is
; Flatness layer 13, generally adopts resin material to make, and thickness is 2.0um; The first electrode layer 14, thickness is
, can adopt indium tin oxide (ITO) to make; Insulation course 15, generally adopts silicon nitride material to make, and thickness is
; The second electrode lay 16, thickness is
, can adopt indium tin oxide (ITO) to make; Be positioned at the middle liquid crystal layer 31 of array base palte and color membrane substrates, long axis of liquid crystal molecule can rotate along parallel electric field direction; The black matrix 22 of color membrane substrates, generally adopts resin material to make, and the black matrix width of high-resolution products is generally less than 6.0um; Red/green/blue pixel 23 of color membrane substrates, adopts resin material to make; Color membrane substrates flatness layer 24, usually adopts resin material to make; Wherein the edge of the first electrode layer 14 below black matrix 22 has space, is preferably two spaces, and preferably gap length is 1.0～2.0um, and the first electrode layer 14 and the second electrode lay 16 non-overlapping portion partial widths are 2～4.0um.
As can be seen from Figure 5, the orthogonal projection of data line metal 12 covers in described black matrix 22 completely, and the Non-overlapping Domain of the first electrode layer 14 and the second electrode lay 16 is corresponding to black matrix 22 and data line metal 12.
As shown in Figure 5, wherein direction incident shown in incident 11 edges backlight, by the color membrane substrates colored filter one side outgoing formation emergent light 21 of panel.When dot structure is worked, the first electrode layer 14 produces fringe field 32,33 with the second electrode lay 16, the reach of this electric field is the first electrode layer 14 edges, by the space on the first electrode layer 14, shielded a part of electric field of the second electrode lay 16 and the first electrode layer 14 formation, reduced the first electrode layer 14 and the ADS electric field intensity of the second electrode lay 16 on pixel long side direction, in fringe field 32,33 scopes, long axis of liquid crystal molecule is mainly along plane deflection.Electric field 32 and electric field 33 have superposition within the specific limits, it should be noted that the intensity of electric field 33 is much smaller than the intensity of electric field 32.
Existence due to space, the second electrode lay 16 and the first electrode layer 14 have been reduced near the fringe field on opposite, therefore there is certain distance 1.0-2.0um at the black matrix of liquid crystal deflecting element range distance 22 opposite side edges, in the situation that black matrix 22 has skew, are not easy to occur colour mixture.
The manufacture method of the array base palte of dot structure is, forms data line metal 12 on underlay substrate, usually adopts molybdenum to make, and thickness is
deposit subsequently flatness layer 13 thereon, adopt resin material to make, thickness is 2.0um; On flatness layer 13, deposit the first electrode layer 14, thickness is
then by being patterned on the first electrode layer 14, form space, be preferably two spaces, preferred gap length is 1.0～2.0um, forms insulation course 15 subsequently on the first electrode layer 14, and insulation course 15 can be used silicon nitride material to make, and thickness is
at insulation course 15, form the second electrode lay 16 subsequently, thickness is
afterwards, form color membrane substrates.
Array base palte and color membrane substrates are carried out box, it should be noted that the orthogonal projection of data line metal 12 covers in black matrix 22 completely, the Non-overlapping Domain of the first electrode layer 14 and the second electrode lay 16 is corresponding to black matrix 22 and data line metal 12.
Dot structure of the present invention and manufacture method thereof can also be for the manufacture methods of display device and this display device.
Above embodiment is only for the present invention is described, but not limitation of the present invention.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is carried out to various combinations, revises or is equal to replacement, do not depart from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of claim of the present invention and scope.
Claims (10)
1. a dot structure, in described dot structure, be provided with data line metal, black matrix, the first electrode layer and the second electrode lay, the orthogonal projection of described data line metal covers in described black matrix completely, between described data line metal and described black matrix, be disposed with the first electrode layer and the second electrode lay, described the first electrode layer is plate electrode, described the second electrode lay is slit-shaped electrode, the Non-overlapping Domain of described the first electrode layer and described the second electrode lay is corresponding to described black matrix and described data line metal, it is characterized in that, near the position corresponding to black matrix edge place in the first electrode layer of described data line metal setting, be provided with space.
2. dot structure according to claim 1, is characterized in that, near the position corresponding to black matrix Liang Ge edge in described first electrode layer of described data line metal setting, is respectively provided with a space.
3. dot structure according to claim 2, is characterized in that, the A/F in wherein said every space is 1.0～2.0um.
4. dot structure according to claim 1, is characterized in that, described the first electrode layer is public electrode, and the second electrode lay is pixel electrode.
5. dot structure according to claim 4, is characterized in that, described pixel electrode and described public electrode Non-overlapping Domain width are 2.0～4.0um.
6. a display device, comprise array base palte and color membrane substrates and be located in liquid crystal layer therebetween, it is characterized in that, described display device comprises the arbitrary described dot structure of claim 1-5, described data line metal, the first electrode layer and the second electrode lay are successively set in array base palte, and described black arranged in matrix is in described color membrane substrates.
7. a manufacture method for dot structure, comprising: the step that forms data line metal, black matrix, the first electrode layer and the second electrode lay;
Wherein, the orthogonal projection of described data line metal covers in described black matrix completely, between described data line metal and black matrix, be disposed with the first electrode layer and the second electrode lay, the first electrode layer is plate electrode, the second electrode lay is slit-shaped electrode, the Non-overlapping Domain of described the first electrode layer and described the second electrode lay, corresponding to described black matrix and described data line metal, is provided with space near the position corresponding to black matrix edge place in described first electrode layer of described data line metal setting.
8. the manufacture method of dot structure according to claim 7, is characterized in that, near the position corresponding to black matrix Liang Ge edge in described first electrode layer of described data line metal setting, is respectively provided with a space.
9. the manufacture method of dot structure according to claim 8, is characterized in that, the A/F in wherein said every space is 1.0～2.0um.
10. the manufacture method of dot structure according to claim 7, is characterized in that, described the first electrode layer is public electrode, and the second electrode lay is pixel electrode, and described pixel electrode and described public electrode Non-overlapping Domain width are 2.0～4.0um.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410228190.2A CN104007588A (en) | 2014-05-27 | 2014-05-27 | Pixel structure, display device and manufacturing method |
| PCT/CN2014/085322 WO2015180275A1 (en) | 2014-05-27 | 2014-08-27 | Pixel structure and manufacturing method therefor, and display apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410228190.2A CN104007588A (en) | 2014-05-27 | 2014-05-27 | Pixel structure, display device and manufacturing method |
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| CN104007588A true CN104007588A (en) | 2014-08-27 |
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| CN201410228190.2A Pending CN104007588A (en) | 2014-05-27 | 2014-05-27 | Pixel structure, display device and manufacturing method |
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| WO (1) | WO2015180275A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108398834A (en) * | 2018-03-22 | 2018-08-14 | 京东方科技集团股份有限公司 | Display panel and the method for preparing display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020118330A1 (en) * | 2001-02-26 | 2002-08-29 | Yun-Bok Lee | Array substrate for in-plane switching mode liquid crystal display device and manufacturing method thereof |
| US20120327338A1 (en) * | 2011-06-27 | 2012-12-27 | Junichi Kobayashi | Liquid crystal display device |
| CN103558717A (en) * | 2013-11-15 | 2014-02-05 | 京东方科技集团股份有限公司 | Array substrate as well as manufacturing method and display device thereof |
| CN203519980U (en) * | 2013-09-30 | 2014-04-02 | 合肥京东方光电科技有限公司 | Array substrate and display device |
-
2014
- 2014-05-27 CN CN201410228190.2A patent/CN104007588A/en active Pending
- 2014-08-27 WO PCT/CN2014/085322 patent/WO2015180275A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020118330A1 (en) * | 2001-02-26 | 2002-08-29 | Yun-Bok Lee | Array substrate for in-plane switching mode liquid crystal display device and manufacturing method thereof |
| US20120327338A1 (en) * | 2011-06-27 | 2012-12-27 | Junichi Kobayashi | Liquid crystal display device |
| CN203519980U (en) * | 2013-09-30 | 2014-04-02 | 合肥京东方光电科技有限公司 | Array substrate and display device |
| CN103558717A (en) * | 2013-11-15 | 2014-02-05 | 京东方科技集团股份有限公司 | Array substrate as well as manufacturing method and display device thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108398834A (en) * | 2018-03-22 | 2018-08-14 | 京东方科技集团股份有限公司 | Display panel and the method for preparing display panel |
| US11204529B2 (en) | 2018-03-22 | 2021-12-21 | Boe Technology Group Co., Ltd. | Display panel and method for manufacturing the display panel |
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| WO2015180275A1 (en) | 2015-12-03 |
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Application publication date: 20140827 |