CN103985669A - Metal interconnection structure and manufacture method thereof - Google Patents
Metal interconnection structure and manufacture method thereof Download PDFInfo
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- CN103985669A CN103985669A CN201410217927.0A CN201410217927A CN103985669A CN 103985669 A CN103985669 A CN 103985669A CN 201410217927 A CN201410217927 A CN 201410217927A CN 103985669 A CN103985669 A CN 103985669A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
The invention provides a metal interconnection structure and a manufacture method thereof. The growth area of a carbon nano tube is increased through a groove, formed through etching, of a previous metal interconnection layer, high-density growth of the carbon nano tube is facilitated, the formed high-density carbon nanao tube can serve as a growth source of a regenerated carbon nano tube in a subsequent through hole, density of the regenerated carbon nano tube in the through hole is improved, and accordingly the density of the carbon nano tubes growing from through holes is guaranteed and performance of the metal interconnection structure is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of metal interconnect structure and manufacture method thereof.
Background technology
Along with further dwindling of copper-connection critical size, rely on merely copper to do the requirement that conductor has been difficult to meet electricity aspect, so having started to test some new materials, researcher replaces copper.
Carbon nano-tube (CNT) as the potential substitution material of copper-connection, can significantly reduce conductor resistance, and can not be subject to electromigratory puzzlement at present, but how CNT is incorporated in copper-connection, is a very large challenge.
Please refer to Figure 1A and 1B, in prior art (Towards Future VLSI Interconnects Using Aligned Carbon Nanotubes, 2011IEEE), proposed two kinds of feasible integration flow processs, but all face the problem self existing.A kind of is the flow process shown in Figure 1A (a), this flow process (a) uses catalyst granules (catalyst particle) as growth source in advance, rely on the guiding of electric field on interconnection layer Metal1, to form vertical CNT, between adjacent C NT and CNT, form CNT through hole (via), adopt again the method for CVD to form dielectric layer, be equivalent to epitaxial growth in through hole and go out all thick catalysis epitaxial loayer (blanket catalyst film) SiO
2, then forming interconnection layer Metal2, its defect is higher to the requirement of mechanical strength of CNT through hole; Another kind is the flow process shown in Figure 1B (b), this flow process (b) is similar to traditional single Damascus, in the dielectric layer through hole (via) having formed, with catalyst granules (catalyst particle) as growth source, dependence ties up effect (crowding-effect), make CNT vertical-growth in dielectric layer through hole, its defect, the CNT density that this flow process grows out be that the CNT that flow process (a) grows out compares on the low side.
Therefore, need a kind of new metal interconnect structure and manufacture method thereof, at least can avoid the above-mentioned defect of part.
Summary of the invention
The object of the present invention is to provide a kind of metal interconnect structure and manufacture method thereof, can guarantee the carbon nano-tube CNT density that grows out in through hole, improve the performance of metal interconnect structure.
For addressing the above problem, the present invention proposes a kind of manufacture method of metal interconnect structure, comprising:
The Semiconductor substrate that is formed with last metal interconnecting layer and last connected medium layer is provided, and described metal interconnecting layer is formed in the groove of described last connected medium layer;
Described last metal interconnecting layer is returned to etching;
On front one deck metal interconnecting layer after returning etching, form a plurality of vertical carbon nano-tube;
On the device surface that forms described carbon nano-tube, deposit middle dielectric layer;
In described middle dielectric layer, form the through hole at expose portion carbon nano-tube top;
Regrowth carbon nano-tube in described through hole;
At the device surface that includes regrowth carbon nano-tube, form next connected medium layer;
Described next connected medium layer is carried out forming next metal interconnecting layer after etching groove.
Further, described last metal interconnecting layer and described next metal interconnecting layer are copper interconnection layer.
Further, adopt wet etching to return etching to described last metal interconnecting layer.
Further, the etching liquid that described wet etching adopts is that acid is that etching liquid or ammoniacal liquor are etching liquid.
Further, the etching depth that returns of described last metal interconnecting layer is greater than 2nm.
Further, the step that forms a plurality of vertical carbon nano-tube on the front one deck metal interconnecting layer after returning etching comprises:
On the mask of employing patterning and front one deck metal interconnecting layer of catalyst granules after described time etching, form growth source;
On front one deck metal interconnecting layer of the guiding that utilizes described growth source and rely on electric field after returning etching, form a plurality of vertical carbon nano-tube.
Further, described growth source is Ferrocene (ferrocene).
Further, adopt physical gas-phase deposition to form described growth source.
Further, adopt chemical vapor deposition method or plasma gas-phase deposit technique, on the front one deck metal interconnecting layer after returning etching, form a plurality of vertical carbon nano-tube.
Further, the degree of depth of described through hole can not expose described growth source.
The present invention also provides a kind of metal interconnect structure, comprises successively forming: the fluted last connected medium layer of tool; Be filled in the groove of described last connected medium layer and top surface lower than the last metal interconnecting layer of the top surface of described last connected medium layer; Be formed on described front one deck metal interconnecting layer and a plurality of vertical carbon nano-tube that the top surface of top surface and described last connected medium layer maintains an equal level; Be formed at the top surface of described last connected medium layer and a plurality of vertical carbon nano-tube and be filled in the middle dielectric layer between described a plurality of vertical carbon nano-tube, in described middle dielectric layer, be formed with through hole; Be formed at the regrowth carbon nano-tube in described through hole; Be formed at the top surface of described middle dielectric layer and regrowth carbon nano-tube and be filled in next the connected medium layer between described regrowth carbon nano-tube, in described next connected medium layer, be formed with the groove that exposes described regrowth carbon nano-tube top; And be filled in next metal interconnecting layer in the groove of described next connected medium layer.
Compared with prior art, metal interconnect structure provided by the invention and manufacture method thereof, can utilize the growth area that groove that etching forms has increased carbon nano-tube that returns of last metal interconnecting layer, be more conducive to the high-density growth of carbon nano-tube, the high-density carbon nano-tube forming thus can be used as the growth source of regrowth carbon nano-tube in through hole, improve the high density of regrowth carbon nano-tube in through hole, can guarantee thus the density of the carbon nano-tube that grows out in through hole, improve the performance of metal interconnect structure.
Accompanying drawing explanation
Figure 1A and Figure 1B are copper interconnection structure manufacturing process and the device architecture schematic diagrames thereof that includes carbon nano-tube in prior art;
Fig. 2 is the manufacture method flow chart of the metal interconnect structure of the specific embodiment of the invention;
Fig. 3 A to 3F is the device architecture schematic diagram in the manufacturing process shown in Fig. 2.
Embodiment
For object of the present invention, feature are become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described, yet the present invention can realize by different forms, should not think and just be confined to described embodiment.
Please refer to Fig. 2, the present invention proposes a kind of manufacture method of metal interconnect structure, comprises the following steps:
S1, provides the Semiconductor substrate that is formed with last metal interconnecting layer and last connected medium layer, and described metal interconnecting layer is formed in the groove of described last connected medium layer;
S2, returns etching to described last metal interconnecting layer;
S3, forms a plurality of vertical carbon nano-tube on the front one deck metal interconnecting layer after returning etching;
S4 deposits middle dielectric layer on the device surface that forms described carbon nano-tube;
S5 forms the through hole at expose portion carbon nano-tube top in described middle dielectric layer;
S6, regrowth carbon nano-tube in described through hole;
S7, forms next connected medium layer at the device surface that includes regrowth carbon nano-tube;
S8, carries out forming next metal interconnecting layer after etching groove to described next connected medium layer.
Please refer to Fig. 3 A, in step S1, the Semiconductor substrate providing comprises last metal interconnecting layer 12 and last connected medium layer 11, and described metal interconnecting layer 12 is formed in the groove of described last connected medium layer 11.In the present embodiment, provide the detailed process of described Semiconductor substrate to comprise:
First, provide a substrate (not shown);
Then, in described substrate, the super low-K material of deposition forms described last connected medium layer 11;
Then, last connected medium layer 11 described in photoetching etching, is formed for metal interconnected groove (not shown);
Then, in described groove, form and stop after inculating crystal layer (not shown), adopt copper to electroplate (ECP) process filling interconnection copper, form described last metal interconnecting layer 12;
Then, top chemical-mechanical planarization (CMP), obtains described Semiconductor substrate.
Please refer to Fig. 3 B, in step S2, adopt wet-etching technology to return etching to described last metal interconnecting layer 12, form groove 13.The etching liquid that described wet-etching technology adopts can be etching liquid for acid, can be also etching liquid for ammoniacal liquor.The etching depth that returns of described last metal interconnecting layer is greater than 2nm, and the degree of depth of groove 13 is greater than 2nm.Wherein, much bigger than the area of through hole via groove 13, be more conducive to the high-density growth of carbon nano-tube CNT.。
Please refer to Fig. 3 C, in step S3, on the front one deck metal interconnecting layer 12 after returning etching, form a plurality of vertical carbon nano-tube (CNT array) 15, specifically comprise:
On the mask of employing patterning and front one deck metal interconnecting layer of catalyst granules after described time etching, by physical gas-phase deposition (PVD), form growth source (catalyst particle) 14, wherein, described growth source can be Ferrocene (ferrocene), is not limited to Ferrocene;
On front one deck metal interconnecting layer 12 of the guiding that utilizes described growth source 14 and rely on electric field after returning etching, chemical vapour deposition (CVD) (CVD) or plasma gas-phase deposit (PECVD) form a plurality of vertical carbon nano-tube 15, carbon nano-tube 15 has higher density, forms through hole 16 between adjacent carbons nanotube 15.
Wherein, in step S3, increase electric field and can control the direction of growth of carbon nano-tube 15 in groove (trench), and, because electric current under electric field action is the direction conduction along carbon nano-tube 15, so the carbon nano-tube 15 of groove first half resistance in the direction along groove is larger, can not become main conductive layer.
Please refer to Fig. 3 D, in step S4, device surface after forming carbon nano-tube (CNT array) 15 deposits ultralow K dielectric material (ULK), forms middle dielectric layer 17, wherein in ultralow K dielectric material deposition process, is filled in the through hole 16 between described carbon nano-tube.
Please continue to refer to Fig. 3 D, in step S5, adopt the etching method for forming through hole in dual damascene process, described middle dielectric layer 17 is carried out to photoetching and via etch, form through hole 18, the width of described through hole 18 can expose the top of part carbon nano-tube 15, but the degree of depth can not expose described growth source 14.
Please refer to Fig. 3 E, in step S6, utilize the carbon nano-tube 15 exposing in step S5 as growth source, and rely on the guiding of electric field in through hole 18, to form a plurality of regrowth carbon nano-tube 19, between adjacent carbons nanotube 19, form through hole 20.In this step, using the high density CNT that formed as growth source, be more conducive to the growth of CNT, so can form highdensity CNT in through hole, i.e. the density of regrowth carbon nano-tube 19 CNT that middle flow process (b) grows out compared to existing technology wants high a lot.
Please refer to Fig. 3 F, in step S7, device surface after the regrowth carbon nano-tube 19 of having grown, again adopt ultralow K deposition of material, form next connected medium layer 21, next connected medium layer 21 covers the top surface of described middle dielectric layer 17 and regrowth carbon nano-tube 19 and is filled in the through hole 20 between described regrowth carbon nano-tube 19.
Please continue to refer to Fig. 3 F, in step S8, first, adopt the etching groove step of dual damascene process to carry out etching formation groove to next connected medium layer 21, described groove can expose the top surface of regrowth carbon nano-tube 19; Then adopt copper electroplating technology in described groove, to fill interconnection copper, form next interconnecting metal layer.Between copper is electroplated, also can first in groove, form and stop inculating crystal layer.
Please refer to Fig. 3 F, the present invention also provides a kind of metal interconnect structure, comprises successively forming: the fluted last connected medium layer 11 of tool; Be filled in the groove of described last connected medium layer 11 and top surface lower than the last metal interconnecting layer 12 of the top surface of described last connected medium layer 11; Be formed on described front one deck metal interconnecting layer 12 and a plurality of vertical carbon nano-tube 15 that the top surface of top surface and described last connected medium layer 11 maintains an equal level; Be formed at the top surface of described last connected medium layer 11 and a plurality of vertical carbon nano-tube 15 and be filled in the middle dielectric layer 17 between described a plurality of vertical carbon nano-tube 15, in described middle dielectric layer 17, be formed with through hole; Be formed at the regrowth carbon nano-tube 19 in described through hole; Be formed at the top surface of described middle dielectric layer 17 and regrowth carbon nano-tube 19 and be filled in next the connected medium layer 21 between described regrowth carbon nano-tube 19, in described next connected medium layer 21, be formed with the groove that exposes described regrowth carbon nano-tube 19 tops; And be filled in next metal interconnecting layer 22 in the groove of described next connected medium layer 21.
In sum, metal interconnect structure provided by the invention and manufacture method thereof, can utilize the growth area that groove that etching forms has increased carbon nano-tube that returns of last metal interconnecting layer, be more conducive to the high-density growth of carbon nano-tube, the high-density carbon nano-tube forming thus can be used as the growth source of regrowth carbon nano-tube in through hole, improve the high density of regrowth carbon nano-tube in through hole, can guarantee thus the density of the carbon nano-tube that grows out in through hole, improve the performance of metal interconnect structure.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (10)
1. a manufacture method for metal interconnect structure, is characterized in that, comprising:
The Semiconductor substrate that is formed with last metal interconnecting layer and last connected medium layer is provided, and described metal interconnecting layer is formed in the groove of described last connected medium layer;
Described last metal interconnecting layer is returned to etching;
On front one deck metal interconnecting layer after returning etching, form a plurality of vertical carbon nano-tube;
On the device surface that forms described carbon nano-tube, deposit middle dielectric layer;
In described middle dielectric layer, form the through hole at expose portion carbon nano-tube top;
Regrowth carbon nano-tube in described through hole;
At the device surface that includes regrowth carbon nano-tube, form next connected medium layer;
Described next connected medium layer is carried out forming next metal interconnecting layer after etching groove.
2. the manufacture method of metal interconnect structure as claimed in claim 1, is characterized in that, described last metal interconnecting layer and described next metal interconnecting layer are copper interconnection layer.
3. the manufacture method of metal interconnect structure as claimed in claim 1, is characterized in that, adopts wet etching to return etching to described last metal interconnecting layer.
4. the manufacture method of metal interconnect structure as claimed in claim 3, is characterized in that, the etching liquid that described wet etching adopts is that acid is that etching liquid or ammoniacal liquor are etching liquid.
5. the manufacture method of metal interconnect structure as claimed in claim 1, is characterized in that, the etching depth that returns of described last metal interconnecting layer is greater than 2nm.
6. the manufacture method of metal interconnect structure as claimed in claim 1, is characterized in that, the step that forms a plurality of vertical carbon nano-tube on the front one deck metal interconnecting layer after returning etching comprises:
On the mask of employing patterning and front one deck metal interconnecting layer of catalyst granules after described time etching, form growth source;
On front one deck metal interconnecting layer of the guiding that utilizes described growth source and rely on electric field after returning etching, form a plurality of vertical carbon nano-tube.
7. the manufacture method of metal interconnect structure as claimed in claim 1, is characterized in that, described growth source is ferrocene.
8. the manufacture method of metal interconnect structure as claimed in claim 1, it is characterized in that, adopt physical gas-phase deposition to form described growth source, adopt chemical vapor deposition method or plasma gas-phase deposit technique, on the front one deck metal interconnecting layer after returning etching, form a plurality of vertical carbon nano-tube.
9. the manufacture method of metal interconnect structure as claimed in claim 1, is characterized in that, the degree of depth of described through hole can not expose described growth source.
10. a metal interconnect structure, is characterized in that, comprises successively forming: the fluted last connected medium layer of tool; Be filled in the groove of described last connected medium layer and top surface lower than the last metal interconnecting layer of the top surface of described last connected medium layer; Be formed on described front one deck metal interconnecting layer and a plurality of vertical carbon nano-tube that the top surface of top surface and described last connected medium layer maintains an equal level; Be formed at the top surface of described last connected medium layer and a plurality of vertical carbon nano-tube and be filled in the middle dielectric layer between described a plurality of vertical carbon nano-tube, in described middle dielectric layer, be formed with through hole; Be formed at the regrowth carbon nano-tube in described through hole; Be formed at the top surface of described middle dielectric layer and regrowth carbon nano-tube and be filled in next the connected medium layer between described regrowth carbon nano-tube, in described next connected medium layer, be formed with the groove that exposes described regrowth carbon nano-tube top; And be filled in next metal interconnecting layer in the groove of described next connected medium layer.
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| CN201410217927.0A CN103985669B (en) | 2014-05-21 | 2014-05-21 | Metal interconnection structure and manufacture method thereof |
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| CN103985669B CN103985669B (en) | 2016-06-22 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1521301A1 (en) * | 2003-09-30 | 2005-04-06 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Method of formation of airgaps around interconnecting line |
| US20090142934A1 (en) * | 2005-12-09 | 2009-06-04 | Freescale Semiconductor, Inc. | Method of forming semiconductor device having nanotube structures |
| CN101652873A (en) * | 2007-04-05 | 2010-02-17 | 美光科技公司 | Memory devices having electrodes comprising nanowires, systems including same and methods of forming same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1521301A1 (en) * | 2003-09-30 | 2005-04-06 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Method of formation of airgaps around interconnecting line |
| US20090142934A1 (en) * | 2005-12-09 | 2009-06-04 | Freescale Semiconductor, Inc. | Method of forming semiconductor device having nanotube structures |
| CN101652873A (en) * | 2007-04-05 | 2010-02-17 | 美光科技公司 | Memory devices having electrodes comprising nanowires, systems including same and methods of forming same |
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