CN103984126A - Plane magneto-optical isolator - Google Patents
Plane magneto-optical isolator Download PDFInfo
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- CN103984126A CN103984126A CN201410221850.4A CN201410221850A CN103984126A CN 103984126 A CN103984126 A CN 103984126A CN 201410221850 A CN201410221850 A CN 201410221850A CN 103984126 A CN103984126 A CN 103984126A
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- microstrip line
- magneto
- line layer
- optoisolator
- faraday rotor
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention aims at providing a plane magneto-optical isolator which is used for overcoming the defect that the existing magneto-optical isolator is large in size and incapable of meeting the requirements of miniaturization and planarization. The plane magneto-optical isolator comprises a polarizer, a faraday rotor and an analyzer, all of which are arranged in parallel to each other in a light passing direction; the plane magneto-optical isolator is characterized in that the faraday rotor is composed of a substrate, a magneto-optical thin film layer, a first microstrip line layer, an insulating layer and a second microstrip line layer, wherein the magneto-optical thin film layer, the first microstrip line layer, the insulating layer and the second microstrip line layer are symmetrically arranged at the two sides of the substrate. The first microstrip line layer is composed of transverse microstrip lines, while the second microstrip line layer is composed of longitudinal microstrip lines, or the first microstrip line layer is composed of the longitudinal microstrip lines, while the second microstrip line layer is composed of the transverse microstrip lines. Due to the optimized design of the faraday rotor structure, the size of the magneto-optical isolator is greatly reduced and the miniaturization and planarization of the magneto-optical isolator are realized.
Description
Technical field
The present invention relates to laser communication technology field, relate to a kind of planar magnetic optoisolator, particularly the optimal design of the Faraday rotor in planar magnetic optoisolator.
Background technology
In recent years, along with the development of laser communication, utilize the interaction of light and magnetic to improve the performance of laser communication.Magneto optic isolator is mainly in order to the reflected light in anti-locking system, the impact of device performance even to be damaged, and device is absolutely necessary in long distance or two-forty optical fiber telecommunications system.
Magneto optic isolator comprises Faraday rotor, be configured in Faraday rotor light incident side the polarizer and be configured in the analyzer of the light emitting side of Faraday rotor.Magneto optic isolator principle of work is mainly utilized Faraday effect, and Faraday effect is a kind of magneto-optic effect (magneto-optic effect) in light wave and magnetic field in medium, can make the rotation of the plane of polarization of light wave.Laser by the polarizer, rotates positive 45 ° through Faraday rotor plane of polarization from light incident side; After reflected light is by analyzer, incide Faraday rotor, plane of polarization rotates positive 45 ° again, forms the right angle plane of polarization of positive 90 ° with the polarizer, makes reflected light cannot see through the polarizer, thereby realizes the protection to Laser Devices.
Faraday rotor is as the core component of magneto optic isolator, and common structure comprises block magneto-optic memory technique and provides permanent magnet or the hot-wire coil of externally-applied magnetic field for magneto-optic memory technique.Faraday angle θ=V*H*L, wherein, V is Verdet constant, is the determined constant of material by Faraday rotor, H is magnetic flux density, L is the length on Faraday rotor optical propagation direction, and in magneto optic isolator, Faraday rotor requirement faraday angle is 45 °, can determine L.But at present common block magneto-optic memory technique faraday angle is all less, meeting faraday angle, be under the condition of 45 °, block magneto-optic memory technique thickness needs 10～20mm, add corresponding permanent magnet or hot-wire coil, the polarizer, analyzer, more than the size of magneto optic isolator reaches 70mm, cannot meet the requirement of laser module miniaturization, complanation in laser communication system completely.Therefore miniaturization, the complanation that, realizes magneto optic isolator becomes the emphasis of our research.
Summary of the invention
The object of the present invention is to provide a kind of planar magnetic optoisolator, large for overcoming existing magneto optic isolator size, cannot meet the defect of miniaturization, complanation requirement.
Technical scheme of the present invention is:
A kind of planar magnetic optoisolator, comprise the polarizer, Faraday rotor and the analyzer that along optical direction, are parallel to each other and place, it is characterized in that, described Faraday rotor consists of magneto-optic thin film layer, the first microstrip line layer, insulation course and the second microstrip line layer of substrate and the setting of substrate symmetria bilateralis.
Further, described the first microstrip line layer is horizontal microstrip line, and the second microstrip line layer is that longitudinal microstrip line or the first microstrip line layer are longitudinal microstrip line, and the second microstrip line layer is horizontal microstrip line.
Described magneto-optic thin film layer is garnet thin film material, and its faraday angle is greater than 0.23 °/um.
Between the described polarizer and Faraday rotor, be also provided with insulation course between analyzer and Faraday rotor.
The described polarizer and analyzer are film polaroid, and the polarizer and the analyzer direction of thoroughly shaking is mutually 45° angle.
Described substrate is GGG substrate.
The invention provides a kind of planar magnetic optoisolator, adopt garnet thin film material as magneto-optic memory technique, replace block magneto-optic memory technique, garnet thin film material faraday angle can reach 0.5 °/um, realizing 45 ° of needed light paths of Faraday rotor, be only 90um, greatly reduce Faraday rotor size; Utilize the microstrip line layer of two-layer energising to replace permanent magnet or hot-wire coil for magneto-optic thin film provides externally-applied magnetic field simultaneously, effectively reduced Faraday rotor size.To sum up, the present invention reduces magneto optic isolator size greatly by the optimal design of Faraday rotor structure, has realized miniaturization, the complanation of magneto optic isolator.
Accompanying drawing explanation
Fig. 1 is first, second microstrip line layer microstrip line distribution relation schematic diagram in planar magnetic optoisolator of the present invention.
Fig. 2 is a diagrammatic cross-section being listed as that the invention provides planar magnetic optoisolator, and wherein, 000 represents that optical axis, 100 is that the polarizer, 110 is that insulation course, 120 is that microstrip line, 130 is that analyzer, 140 is that magneto-optic thin film layer, 111 is substrate.
Fig. 3 is the index path of planar magnetic optoisolator of the present invention.
Embodiment
Below in conjunction with specific embodiment and accompanying drawing, the present invention is described in further detail, it should be noted that the present invention is not limited to this embodiment.
Planar magnetic optoisolator, comprise the polarizer 100, Faraday rotor and the analyzer 130 that along optical direction, are parallel to each other and place, wherein the polarizer and analyzer are film polaroid, the polarizer and the analyzer direction of thoroughly shaking is mutually 45° angle, between the polarizer and Faraday rotor, be also provided with insulation course between analyzer and Faraday rotor; Described Faraday rotor is comprised of the second microstrip line layer setting gradually along optical direction, insulation course, the first microstrip line layer, garnet, GGG substrate, garnet, the first microstrip line layer, insulation course, the second microstrip line layer, and wherein the second microstrip line layer, insulation course, the first microstrip line layer, garnet arrange along GGG substrate symmetria bilateralis.The first microstrip line layer insulate by insulation course mutually with the second microstrip line layer, and wherein the first microstrip line layer adopts horizontal microstrip line, the second microstrip line layer to adopt longitudinal microstrip line.
The present invention utilize the microstrip line of energising to replace switching on magnetic field that spiral pipe or permanent magnet produce.
According to Biot-Savart law
Wherein, I is the electric current in wire, is L path of integration, and dl is the small line element of electric current, for current source points to, waits to ask a vector of unit length of putting, and μ is that its value of permeability of vacuum is 4 π * 10
7.Follow according to required magnetic field size and can determine energising microstrip line size of current.
The garnet thin film material using in the present embodiment, under the laser of wavelength 1310nm, 1550um, magneto-optic faraday angle can reach 0.5 °/um, and realize 45 ° of needed light paths of Faraday rotor is only 90um.Greatly reduce Faraday rotor size, realized miniaturization, the complanation of magneto optic isolator.
Claims (7)
1. a planar magnetic optoisolator, comprise the polarizer, Faraday rotor and the analyzer that along optical direction, are parallel to each other and place, it is characterized in that, described Faraday rotor consists of magneto-optic thin film layer, the first microstrip line layer, insulation course and the second microstrip line layer of substrate and the setting of substrate symmetria bilateralis.
2. by a kind of planar magnetic optoisolator described in claim 1, it is characterized in that, described the first microstrip line layer adopts horizontal microstrip line, and the second microstrip line layer adopts longitudinal microstrip line.
3. by a kind of planar magnetic optoisolator described in claim 1, it is characterized in that, described the first microstrip line layer adopts longitudinal microstrip line, and the second microstrip line layer adopts horizontal microstrip line.
4. by arbitrary described planar magnetic optoisolator in claims 1 to 3, it is characterized in that, described magneto-optic thin film layer is garnet thin film material, and its faraday angle is greater than 0.23 °/um.
5. by arbitrary described planar magnetic optoisolator in claims 1 to 3, it is characterized in that, the described polarizer and analyzer are film polaroid, and the polarizer and the analyzer direction of thoroughly shaking is mutually 45° angle.
6. by arbitrary described planar magnetic optoisolator in claims 1 to 3, it is characterized in that, between the described polarizer and Faraday rotor, be also provided with insulation course between analyzer and Faraday rotor.
7. by arbitrary described planar magnetic optoisolator in claims 1 to 3, it is characterized in that, described substrate is GGG substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410221850.4A CN103984126A (en) | 2014-05-23 | 2014-05-23 | Plane magneto-optical isolator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410221850.4A CN103984126A (en) | 2014-05-23 | 2014-05-23 | Plane magneto-optical isolator |
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| Publication Number | Publication Date |
|---|---|
| CN103984126A true CN103984126A (en) | 2014-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410221850.4A Pending CN103984126A (en) | 2014-05-23 | 2014-05-23 | Plane magneto-optical isolator |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104764798A (en) * | 2015-03-26 | 2015-07-08 | 电子科技大学 | Visual magnetic flux leakage detection device |
| CN106443519A (en) * | 2016-09-27 | 2017-02-22 | 山东大学 | Measurement system and method for detecting magnetic field intensity using magnetic optical isolator |
| FR3050832A1 (en) * | 2016-04-28 | 2017-11-03 | Commissariat Energie Atomique | FARADAY ISOLATOR OPTICAL COUPLING DEVICE |
| WO2018041182A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Magnetic surface fast wave photodiode with magneto-optic material gap waveguide |
| WO2018041176A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Magnetic surface fast wave direction-controllable photodiode with magneto-optic material gap waveguide |
| CN111679458A (en) * | 2020-05-25 | 2020-09-18 | 电子科技大学 | Planar magneto-optical switch |
-
2014
- 2014-05-23 CN CN201410221850.4A patent/CN103984126A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104764798A (en) * | 2015-03-26 | 2015-07-08 | 电子科技大学 | Visual magnetic flux leakage detection device |
| CN104764798B (en) * | 2015-03-26 | 2018-08-07 | 电子科技大学 | A kind of visualization leakage magnetic detection device |
| FR3050832A1 (en) * | 2016-04-28 | 2017-11-03 | Commissariat Energie Atomique | FARADAY ISOLATOR OPTICAL COUPLING DEVICE |
| WO2018041182A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Magnetic surface fast wave photodiode with magneto-optic material gap waveguide |
| WO2018041176A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Magnetic surface fast wave direction-controllable photodiode with magneto-optic material gap waveguide |
| CN106443519A (en) * | 2016-09-27 | 2017-02-22 | 山东大学 | Measurement system and method for detecting magnetic field intensity using magnetic optical isolator |
| CN106443519B (en) * | 2016-09-27 | 2019-02-22 | 山东大学 | A kind of measuring system and method using magneto optic isolator detection magnetic field strength |
| CN111679458A (en) * | 2020-05-25 | 2020-09-18 | 电子科技大学 | Planar magneto-optical switch |
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Application publication date: 20140813 |
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