CN103979960A - Preparation method of BCTZ-xBi<3+> system multifunctional electronic ceramic powder - Google Patents

Preparation method of BCTZ-xBi<3+> system multifunctional electronic ceramic powder Download PDF

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CN103979960A
CN103979960A CN201410195852.0A CN201410195852A CN103979960A CN 103979960 A CN103979960 A CN 103979960A CN 201410195852 A CN201410195852 A CN 201410195852A CN 103979960 A CN103979960 A CN 103979960A
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xbi
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蒲永平
孙梓雄
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Shaanxi University of Science and Technology
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Abstract

The invention discloses a preparation method of a BCTZ-xBi<3+> system multifunctional electronic ceramic powder. The method comprises the following steps: 1) respectively dissolving BaCl2 2H2O, CaCl2, ZrOCl2, 8H2O and Bi(NO3)3 in water, fully stirring until complete dissolution, mixing the aqueous solutions of the four substances to obtain a mixed solution; 2)adding TiCl4 and NaOH into the mixed solution, and fully stirring to obtain a BCTZ-xBi<3+> system powder precursor; 3) conducting thermal insulation treatment on the BCTZ-xBi<3+> system powder precursor in the hydrothermal environment to obtain a BCTZ-xBi<3+> system powder; 4) washing, precipitating, drying, grinding and molding the BCTZ-xBi<3+> system powder to obtain a BCTZ-xBi<3+> system blank; and 5) conducting microwave sintering on the BCTZ-xBi<3+> system blank in air atmosphere to obtain the BCTZ-xBi<3+> system multifunctional electronic ceramic powder. The invention employs the hydrothermal method to prepare ceramic with small grain, and through Bi ion doping, the ceramic eventually exhibits excellent relaxation behavior. The preparation process has the advantages of simpleness, short production cycle, low sintering temperature and short sintering time, is applicable to industrialized mass production.

Description

A kind of BCTZ -xbi 3+the preparation method of system multifunction electronic ceramic powder
Technical field
The invention belongs to field of functional materials, be specifically related to a kind of BCTZ-xBi 3+the preparation method of system multifunction electronic ceramic powder.
Background technology
BaTiO 3be a kind of perovskite typed dielectric substance of finding the earliest, at room temperature show good ferroelectric behavior, be once called as the pillar of electronic ceramics industry, be widely used in various electronic material components and parts.Relaxation ferroelectric relies on it to be better than the ferroelectric various features of tradition (as wide Curie's warm area and high-temperature electric hysteresis curves etc.), is paid attention to wherein BaTiO by increasing investigation of materials person 3the Relaxation Ferroelectrics of base is wherein maximum study hotspot.BCTZ (Ba 1-xca xti 1-xzr xo 3) system pottery has equally the performance of relaxation ferroelectric except having good piezoelectric property, and the BCTZ of pure phase is only difficult to obtain by changing the value of x the relaxation ferroelectric that performance is comparatively excellent.Therefore doping just becomes with solid solution the common method that improves BCTZ system ferroelectrics relaxation behavior.
Along with the raising that the growing and people of science and technology require electronic devices and components, increasing electronic devices and components are required to be applied in extreme condition as under high temperature, high frequency environment.And traditional electron ceramic material often has the defects such as the poor or frequency stability of temperature stability is poor, and relaxation ferroelectric has made up this leak just.In BCTZ system pottery, Bi 3+in the time of low concentration doping, first replace A position; Along with the raising of doping content, Bi 3+progress in oxygen octahedra and replace B position, produce dipole pilot polarization with O ion.Because dipole pilot polarization belongs to the polarization of relaxation type, in the time that frequency is higher, do not catch up with the variation of extra electric field, therefore only have when field frequencies range is lower outside polarization is had to contribution.
Nowadays, BCTZ system electronic pottery is only to use as a kind of leadless piezoelectric material material, very few to its research as Relaxation Ferroelectrics.The pure phase BCTZ pottery that some research is prepared by wet chemical method only shows faint relaxation behavior.
Summary of the invention
The object of the present invention is to provide a kind of BCTZ-xBi 3+the preparation method of system multifunction electronic ceramic powder, the method adopts hydrothermal method in conjunction with Microwave Sintering Techniques, has made at short notice the BCTZ-xBi of high-compactness, even grain size 3+ceramic powder.
The present invention is achieved through the following technical solutions:
A kind of BCTZ-xBi 3+the preparation method of system multifunction electronic ceramic powder, comprises the following steps:
1) press the mol ratio of Ba:Ca:Zr:Bi=0.9:0.1:0.1:x, by BaCl 22H 2o, CaCl 2, ZrOCl 28H 2o and Bi (NO 3) 3after mixing, add water, be stirred well to after dissolving completely, obtain mixing solutions; Wherein, 0 < x≤0.03;
2) press Ti:Ba:[OH-]=1:1:(5～10) mol ratio, by TiCl 4add in mixing solutions with NaOH, be stirred well to mixing solutions thick for white, obtain BCTZ-xBi 3+system powder precursor;
3) by BCTZ-xBi 3+system powder precursor is under 150～200 DEG C of thermal and hydric environments, and insulation 10～15h, is cooled to room temperature, obtains BCTZ-xBi 3+system powder;
4) by BCTZ-xBi 3+system powder is through washing, precipitation, then drying, grinding, moulding, obtains BCTZ-xBi 3+system base substrate;
5) by BCTZ-xBi 3+system base substrate carries out microwave sintering in air atmosphere, and sintering temperature is 1100～1300 DEG C, and soaking time is 5～10min, is then cooled to room temperature, obtains BCTZ-xBi 3+system multifunction electronic ceramic powder.
Step 1) in the span of x be 0.005～0.030.
Step 1) in the value of x be 0.005,0.010,0.015,0.020,0.025 or 0.030.
Step 3) be by BCTZ-xBi 3+system powder precursor is placed in hydrothermal reaction kettle and is incubated processing.
BCTZ-xBi 3+the packing ratio of system powder precursor in hydrothermal reaction kettle is 60%～80%.
Step 4) described washing, precipitation be by BCTZ-xBi 3+system powder is with after washed with de-ionized water, and centrifuging and taking precipitates, and repetitive scrubbing, precipitation operation are until the supernatant liquor AgNO after centrifugal 3till inspection does not have white precipitate.
Step 5) be by BCTZ-xBi 3+system base substrate is placed in retort furnace and carries out microwave sintering.
Compared with prior art, the present invention has following useful technique effect:
1, to adopt traditional hydrothermal method to obtain crystal grain tiny evenly and mix well-balanced BCTZ-xBi in the present invention 3+ceramic powder, the impurity of having avoided solid phase method to bring; By Microwave Sintering Techniques, greatly shorten sintering time and saved the energy, make pottery there is tiny and uniform grain-size;
2, the BCTZ-xBi that prepared by the present invention 3+ceramic powder, because grain-size is little and distributed components, the directric relaxation behavior being caused by structure fluctuating phase transformation and composition fluctuating phase transformation is comparatively obvious, has directric relaxation, thereby can still have good electric property at some extreme environments;
3, the present invention changes the value of x by trace, ceramic electrical parameter is changed in the larger context, thereby can be widely used in electronic ceramic fields;
4, the BCTZ-xBi making 3+ceramic powder is not leaded, has replaced traditional leaded piezoelectric PZT in the time of low doping concentration, has avoided the harm of lead poisoning to human body and environment, has the features such as high-k, wide Curie's warm area and low-dielectric loss simultaneously;
5, preparation technology of the present invention is simple, with short production cycle, compared with traditional multifunction electronic stupalith preparation method, greatly reduce sintering temperature and shortened sintering time, thereby applicable large-scale industrialization is produced.
Brief description of the drawings
Fig. 1 is the BCTZ-xBi that the present invention makes 3+system ceramic dielectric constant-temperature curve;
Wherein, (a)～(f) be respectively BCTZ-xBi 3+system pottery is at x=0.005,0.010,0.015,0.020,0.025 and specific inductivity-the temperature curve of 0.030 o'clock;
Fig. 2 is BCTZ-0.030Bi 3+the relaxation behavior parametric plot of relaxation ferroelectric.
Wherein, (a) for being elastivity-temperature curve; (b) be the curve of Curie-weiss formula institute matching.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, and the explanation of the invention is not limited.
BCTZ-xBi of the present invention 3+the preparation method of system multifunction electronic stupalith, specific as follows:
Carry out Ba according to molecular formula 0.9ca 0.1ti 0.9zr 0.1o 3-xBi 3+prepare burden, the raw material adopting is BaCl 22H 2o (s), CaCl 2(s), ZrOCl 28H 2o (s), TiCl 4and Bi (NO (l) 3) 3, utilize NaOH to regulate acid-basicity to make pH > 14 in solution.The raw material adopting is chemical pure.The preparation of material is according to following processing step:
1. first weigh BaCl according to stoichiometric ratio 22H 2o (s), CaCl 2(s), ZrOCl 28H 2o (s) and Bi (NO 3) 3(s), be configured to mix, leave standstill after solution.
2. by TiCl 4(l) dropwise add 1. in gained mixing solutions, stir, NaOH solid is added in above-mentioned gained mixture and is stirred until be white in color thick.Obtain BCTZ-x Bi 3+powder precursor.
3. by BCTZ-x Bi 3+powder precursor is poured in water heating kettle, and water heating kettle packing ratio is 60%～80%, be incubated 10～15h under 150～200 DEG C of thermal and hydric environments, obtains BCTZ-xBi 3+system powder.
Powder is repeatedly washed, precipitated by deionized water, until use AgNO 3till inspection does not have white precipitate.Finally dry, grinding, granulation, moulding.
4. the base substrate after moulding is carried out in air to microwave sintering, 1100～1300 DEG C of sintering temperatures, soaking time 5～10min, cool to room temperature with the furnace, obtains BCTZ-xBi 3+system multifunction electronic pottery.
Because microwave sintering is pottery to be heated by two kinds of modes of coupling of external heat source and microwave and pottery inside simultaneously, shorten greatly sintering time.The powder of preparing by hydrothermal method has that purity is high, the feature of even grain size, coordinates this type of heating fast of microwave sintering to suppress the growth of experience simultaneously.Obtain the higher and crystal particle scale of density BCTZ-xBi comparatively uniformly 3+system pottery.
Embodiment 1
A kind of BCTZ-xBi 3+the preparation method of system multifunction electronic pottery, comprises the following steps:
1) press the mol ratio of Ba:Ca:Zr:Bi=0.9:0.1:0.1:0.005, by BaCl 22H 2o, CaCl 2, ZrOCl 28H 2o and Bi (NO 3) 3soluble in water respectively, be stirred well to after dissolving completely, the aqueous solution of four kinds of materials is mixed, obtain mixing solutions;
2) press Ti:Ba:[OH -the mol ratio of]=1:1:5, by TiCl 4add in mixing solutions with NaOH, be stirred well to mixing solutions thick for white, obtain BCTZ-0.005Bi 3+system powder precursor;
3) by BCTZ-xBi 3+system powder precursor is placed in hydrothermal reaction kettle, at 150 DEG C, after insulation reaction 15h, is cooled to room temperature, obtains BCTZ-xBi 3+system powder; Wherein, the compactedness of hydrothermal reaction kettle is 60%;
4) by BCTZ-0.005Bi 3+system powder is with after washed with de-ionized water, and centrifuging and taking precipitation, is washed precipitation until the supernatant liquor AgNO after centrifugal at repetitive scrubbing 3till inspection does not have white precipitate, then drying, grinding, moulding, BCTZ-0.005Bi obtained 3+system base substrate;
5) by BCTZ-0.005Bi 3+system base substrate is placed in retort furnace, carries out microwave sintering in air atmosphere, and sintering temperature is 1100 DEG C, and soaking time is 10min, then cools to room temperature with the furnace, obtains BCTZ-0.005Bi 3+system multifunction electronic pottery.
Embodiment 2
A kind of BCTZ-xBi 3+the preparation method of system multifunction electronic pottery, comprises the following steps:
1) press the mol ratio of Ba:Ca:Zr:Bi=0.9:0.1:0.1:0.010, by BaCl 22H 2o, CaCl 2, ZrOCl 28H 2o and Bi (NO 3) 3soluble in water respectively, be stirred well to after dissolving completely, the aqueous solution of four kinds of materials is mixed, obtain mixing solutions;
2) press Ti:Ba:[OH-] mol ratio of=1:1:6, by TiCl 4add in mixing solutions with NaOH, be stirred well to mixing solutions thick for white, obtain BCTZ-0.010Bi 3+system powder precursor;
3) by BCTZ-0.010Bi 3+system powder precursor is placed in hydrothermal reaction kettle, at 160 DEG C, after insulation reaction 14h, is cooled to room temperature, obtains BCTZ-xBi 3+system powder; Wherein, the compactedness of hydrothermal reaction kettle is 70%;
4) by BCTZ-0.010Bi 3+system powder is with after washed with de-ionized water, and centrifuging and taking precipitation, is washed precipitation until the supernatant liquor AgNO after centrifugal at repetitive scrubbing 3till inspection does not have white precipitate, then drying, grinding, moulding, BCTZ-0.010Bi obtained 3+system base substrate;
5) by BCTZ-0.010Bi 3+system base substrate is placed in retort furnace, carries out microwave sintering in air atmosphere, and sintering temperature is 1200 DEG C, and soaking time is 8min, then cools to room temperature with the furnace, obtains BCTZ-0.010Bi 3+system multifunction electronic pottery.
Embodiment 3
A kind of BCTZ-xBi 3+the preparation method of system multifunction electronic pottery, comprises the following steps:
1) press the mol ratio of Ba:Ca:Zr:Bi=0.9:0.1:0.1:0.015, by BaCl 22H 2o, CaCl 2, ZrOCl 28H 2o and Bi (NO 3) 3soluble in water respectively, be stirred well to after dissolving completely, the aqueous solution of four kinds of materials is mixed, obtain mixing solutions;
2) press Ti:Ba:[OH -the mol ratio of]=1:1:7, by TiCl 4add in mixing solutions with NaOH, be stirred well to mixing solutions thick for white, obtain BCTZ-0.015Bi 3+system powder precursor;
3) by BCTZ-0.015Bi 3+system powder precursor is placed in hydrothermal reaction kettle, at 150 DEG C, after insulation reaction 15h, is cooled to room temperature, obtains BCTZ-0.015Bi 3+system powder; Wherein, the compactedness of hydrothermal reaction kettle is 60%;
4) by BCTZ-0.015Bi 3+system powder is with after washed with de-ionized water, and centrifuging and taking precipitation, is washed precipitation until the supernatant liquor AgNO after centrifugal at repetitive scrubbing 3till inspection does not have white precipitate, then drying, grinding, moulding, BCTZ-0.015Bi obtained 3+system base substrate;
5) by BCTZ-0.015Bi 3+system base substrate is placed in retort furnace, carries out microwave sintering in air atmosphere, and sintering temperature is 1300 DEG C, and soaking time is 5min, then cools to room temperature with the furnace, obtains BCTZ-0.015Bi 3+system multifunction electronic pottery.
Embodiment 4
A kind of BCTZ-xBi 3+the preparation method of system multifunction electronic pottery, comprises the following steps:
1) press the mol ratio of Ba:Ca:Zr:Bi=0.9:0.1:0.1:0.020, by BaCl 22H 2o, CaCl 2, ZrOCl 28H 2o and Bi (NO 3) 3soluble in water respectively, be stirred well to after dissolving completely, the aqueous solution of four kinds of materials is mixed, obtain mixing solutions;
2) press Ti:Ba:[OH-] mol ratio of=1:1:8, by TiCl 4add in mixing solutions with NaOH, be stirred well to mixing solutions thick for white, obtain BCTZ-0.020Bi 3+system powder precursor;
3) by BCTZ-0.020Bi 3+system powder precursor is placed in hydrothermal reaction kettle, at 170 DEG C, after insulation reaction 13h, is cooled to room temperature, obtains BCTZ-0.020Bi 3+system powder; Wherein, the compactedness of hydrothermal reaction kettle is 65%;
4) by BCTZ-0.020Bi 3+system powder is with after washed with de-ionized water, and centrifuging and taking precipitation, is washed precipitation until the supernatant liquor AgNO after centrifugal at repetitive scrubbing 3till inspection does not have white precipitate, then drying, grinding, moulding, BCTZ-0.020Bi obtained 3+system base substrate;
5) by BCTZ-0.020Bi 3+system base substrate is placed in retort furnace, carries out microwave sintering in air atmosphere, and sintering temperature is 1200 DEG C, and soaking time is 7min, then cools to room temperature with the furnace, obtains BCTZ-0.020Bi 3+system multifunction electronic pottery.
Embodiment 5
A kind of BCTZ-xBi 3+the preparation method of system multifunction electronic pottery, comprises the following steps:
1) press the mol ratio of Ba:Ca:Zr:Bi=0.9:0.1:0.1:0.025, by BaCl 22H 2o, CaCl 2, ZrOCl 28H 2o and Bi (NO 3) 3soluble in water respectively, be stirred well to after dissolving completely, the aqueous solution of four kinds of materials is mixed, obtain mixing solutions;
2) press Ti:Ba:[OH -the mol ratio of]=: 1:1:9, by TiCl 4add in mixing solutions with NaOH, be stirred well to mixing solutions thick for white, obtain BCTZ-0.025Bi 3+system powder precursor;
3) by BCTZ-0.025Bi 3+system powder precursor is placed in hydrothermal reaction kettle, at 180 DEG C, after insulation reaction 12h, is cooled to room temperature, obtains BCTZ-0.025Bi 3+system powder; Wherein, the compactedness of hydrothermal reaction kettle is 75%;
4) by BCTZ-0.025Bi 3+system powder is with after washed with de-ionized water, and centrifuging and taking precipitation, is washed precipitation until the supernatant liquor AgNO after centrifugal at repetitive scrubbing 3till inspection does not have white precipitate, then drying, grinding, moulding, BCTZ-0.025Bi obtained 3+system base substrate;
5) by BCTZ-0.025Bi 3+system base substrate is placed in retort furnace, carries out microwave sintering in air atmosphere, and sintering temperature is 1300 DEG C, and soaking time is 5min, then cools to room temperature with the furnace, obtains BCTZ-0.025Bi 3+system multifunction electronic pottery.
Embodiment 6
A kind of BCTZ-xBi 3+the preparation method of system multifunction electronic pottery, comprises the following steps:
1) press the mol ratio of Ba:Ca:Zr:Bi=0.9:0.1:0.1:0.030, by BaCl 22H 2o, CaCl 2, ZrOCl 28H 2o and Bi (NO 3) 3soluble in water respectively, be stirred well to after dissolving completely, the aqueous solution of four kinds of materials is mixed, obtain mixing solutions;
2) press Ti:Ba:[OH -the mol ratio of]=: 1:1:10, by TiCl 4add in mixing solutions with NaOH, be stirred well to mixing solutions thick for white, obtain BCTZ-0.030Bi 3+system powder precursor;
3) by BCTZ-0.030Bi 3+system powder precursor is placed in hydrothermal reaction kettle, at 200 DEG C, after insulation reaction 10h, is cooled to room temperature, obtains BCTZ-0.030Bi 3+system powder; Wherein, the compactedness of hydrothermal reaction kettle is 80%;
4) by BCTZ-0.030Bi 3+system powder is with after washed with de-ionized water, and centrifuging and taking precipitation, is washed precipitation until the supernatant liquor AgNO after centrifugal at repetitive scrubbing 3till inspection does not have white precipitate, then drying, grinding, moulding, BCTZ-0.030Bi obtained 3+system base substrate;
5) by BCTZ-0.030Bi 3+system base substrate is placed in retort furnace, carries out microwave sintering in air atmosphere, and sintering temperature is 1200 DEG C, and soaking time is 8min, then cools to room temperature with the furnace, obtains BCTZ-0.030Bi 3+system multifunction electronic pottery.
The BCTZ-xBi obtaining that above-described embodiment is made 3+the upper and lower both sides of system multifunction electronic ceramics sample are smooth with sand papering, are coated with Ag and starch as electrode, then carry out specific inductivity-temperature survey.Record pottery specific inductivity-temperature curve of (0.1～1000kHz) under different frequency.In Fig. 1, (a)～and (f) be respectively BCTZ-xBi3+ system pottery at x=0.005,0.010,0.015,0.020,0.025 and specific inductivity-the temperature curve of 0.030 o'clock, represent that along the direction of arrow frequency is increased gradually by 1kHz～1000kHz; Can find out, work as Bi 3+when doping content is lower, there is Curie peak 65 DEG C of left and right and along with Bi 3+the raising Curie temperature of doping decreases and occurs tripartite-tetragonal phase converting temperature (T o-T).Simultaneously along with Bi 3+the raising dielectric loss of doping obviously declines.In the time that x brings up to 0.020, as shown in Fig. 1 (d), Curie temperature is reduced to 55 DEG C and specific inductivity suddenly to be increased, and dielectric loss also suddenly increases.Known by the test to sample resistivity-temperature curve: two its resistivity of sample of x=0.015 and x=0.020 have reached semiconductor capacitor scope, and show positive temperature coefficient capacitor specific characteristics.The sample of x=0.020 60 DEG C following outside field frequencies range while being 0.1kHz, its specific inductivity has reached huge dielectric constant capacitor ranges.As shown in Fig. 1 (f), in the time that the doping of sample is 0.030, sample is converted into Relaxation Ferroelectrics.
Fig. 2 is BCTZ-0.030Bi 3+the relaxation behavior parametric plot of relaxation ferroelectric, wherein, (a) for being elastivity-temperature curve; (b) be the curve of Curie-weiss formula institute matching, γ=1.74 show that this system is relaxation ferroelectric; As can be seen from Figure 2, BCTZ-0.030Bi 3+system sample shows excellent relaxation behavior.
In sum, the inventive method is prepared powder by traditional hydrothermal method under supercritical environment, by changing Bi 3+the doping of ion adopts Microwave Sintering Techniques to carry out Fast Sintering to ceramic green simultaneously, has obtained fine and close BCTZ-xBi 3+electronic ceramics.By the change to VA main group element Bi doping x, make this pottery there is the performances such as dielectric, ferroelectric, piezoelectricity and can be used as PTC N-type semiconductorN electrical condenser and huge dielectric constant electrical condenser simultaneously, in the time that doping reaches x=0.03, this component pottery at room temperature can be used as a kind of good Relaxation Ferroelectrics.
In the present invention, first utilize traditional hydrothermal method to prepare powder precursor.Bi element form with ion in thermal and hydric environment enters in lattice.Compared with solid phase method, the advantage such as it is high that the powder that hydrothermal method is prepared has purity, and particle size is even.Adopt the mode of microwave sintering to carry out Fast Sintering to ceramic green simultaneously, obtained the finer and close and more uniform BCTZ-xBi of grain-size 3+system pottery.Microwave sintering can shorten sintering time greatly, has saved the energy and has improved efficiency.In the present invention, BCTZ itself is a kind of good leadless piezoelectric material material, has avoided the harm of traditional leaded PZT piezoelectric ceramics to environment and human body, has the features such as high-k, wide Curie's warm area and low-dielectric loss simultaneously.Improve gradually doping pottery and show relaxor ferroelectric behavior slightly, work as Bi 3+when doping is lower, sample shows relaxation behavior slightly, in the time that doping reaches 0.020, because " pinning effect " pottery of doping shows certain PTC behavior and has high specific inductivity.And in the time of x=0.030, due to reducing of grain-size extreme, pottery is thoroughly converted into Relaxation Ferroelectrics by traditional ferroelectrics.

Claims (7)

1. a BCTZ-xBi 3+the preparation method of system multifunction electronic ceramic powder, is characterized in that, comprises the following steps:
1) press the mol ratio of Ba:Ca:Zr:Bi=0.9:0.1:0.1:x, by BaCl 22H 2o, CaCl 2, ZrOCl 28H 2o and Bi (NO 3) 3after mixing, add water, be stirred well to after dissolving completely, obtain mixing solutions; Wherein, 0 < x≤0.03;
2) press Ti:Ba:[OH-]=1:1:(5～10) mol ratio, by TiCl 4add in mixing solutions with NaOH, be stirred well to mixing solutions thick for white, obtain BCTZ-xBi 3+system powder precursor;
3) by BCTZ-xBi 3+system powder precursor is under 150～200 DEG C of thermal and hydric environments, and insulation 10～15h, is cooled to room temperature, obtains BCTZ-xBi 3+system powder;
4) by BCTZ-xBi 3+system powder is through washing, precipitation, then drying, grinding, moulding, obtains BCTZ-xBi 3+system base substrate;
5) by BCTZ-xBi 3+system base substrate carries out microwave sintering in air atmosphere, and sintering temperature is 1100～1300 DEG C, and soaking time is 5～10min, is then cooled to room temperature, obtains BCTZ-xBi 3+system multifunction electronic ceramic powder.
2. a kind of BCTZ-xBi according to claim 1 3+the preparation method of system multifunction electronic ceramic powder, is characterized in that step 1) in the span of x be 0.005～0.030.
3. a kind of BCTZ-xBi according to claim 1 and 2 3+the preparation method of system multifunction electronic ceramic powder, is characterized in that step 1) in the value of x be 0.005,0.010,0.015,0.020,0.025 or 0.030.
4. a kind of BCTZ-xBi according to claim 1 3+the preparation method of system multifunction electronic ceramic powder, step 3) be by BCTZ-xBi 3+system powder precursor is placed in hydrothermal reaction kettle and is incubated processing.
5. a kind of BCTZ-xBi according to claim 4 3+the preparation method of system multifunction electronic ceramic powder, is characterized in that BCTZ-xBi 3+the packing ratio of system powder precursor in hydrothermal reaction kettle is 60%～80%.
6. a kind of BCTZ-xBi according to claim 1 3+the preparation method of system multifunction electronic ceramic powder, is characterized in that step 4) described washing, precipitation be by BCTZ-xBi 3+system powder is with after washed with de-ionized water, and centrifuging and taking precipitates, and repetitive scrubbing, precipitation operation are until the supernatant liquor AgNO after centrifugal 3till inspection does not have white precipitate.
7. a kind of BCTZ-xBi according to claim 1 3+the preparation method of system multifunction electronic ceramic powder, is characterized in that step 5) be by BCTZ-xBi 3+system base substrate is placed in retort furnace and carries out microwave sintering.
CN201410195852.0A 2014-05-09 2014-05-09 Preparation method of BCTZ-xBi<3+> system multifunctional electronic ceramic powder Pending CN103979960A (en)

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Application publication date: 20140813