CN103974506A - Light-emitting device with temperature compensation - Google Patents
Light-emitting device with temperature compensation Download PDFInfo
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- CN103974506A CN103974506A CN201410044257.7A CN201410044257A CN103974506A CN 103974506 A CN103974506 A CN 103974506A CN 201410044257 A CN201410044257 A CN 201410044257A CN 103974506 A CN103974506 A CN 103974506A
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Abstract
The present application provides a light-emitting device comprising a first light-emitting diode group, a second light-emitting diode group that is connected in parallel to the first light-emitting diode group, a temperature compensation element electrically connected to the second light-emitting diode group, a first switching element connected between the secong light-emitting diode group and the temperature compensation element. By controlling the resistance of the temperature compensation element, the attenuation of the optical output power of the second light-emitting diode group in the temperature rise due to a hot-cold coefficient, and thus a function of temperature compensation is fulfilled.
Description
Technical field
The present invention relates to a kind of light-emitting device, especially comprise a switch element and be connected between temperature compensating element and a light-emitting diode group.
Background technology
Incandescent lamp is because of hot luminous.On the contrary, the luminous mechanism of light-emitting diode (light-emitting diode, LED) is the combination in electronics and electric hole, and therefore light-emitting diode is called as cold light source.
In addition, light-emitting diode has the advantages such as high-durability, the life-span is long, light and handy, power consumption is low, therefore illumination market is now placed high hopes for light-emitting diode, be regarded as illuminations of new generation, replace gradually conventional light source, and be applied to various fields, as traffic sign, backlight module, street lighting, Medical Devices etc.
In the application of lighting field, generally need make light-emitting diode produce the spectrum of light (white light) recently and be accustomed to cooperation human eye vision.Aforementioned white applications can, by Red, Blue, Green light-emitting diode, by circuit design allotment operating current, blend together white light according to different proportion.Because circuit module cost is high and complex circuit designs, this application is not general at present.Can excite red, green, blue look phosphor powder to make to send ruddiness, green glow, blue light by ultraviolet spectra light-emitting diode (UV-LED) in addition, then blend together white light.But because the luminous efficiency of current UV-LED is still waited to improve, not yet general in product application.
But in the time of electric current input light-emitting diode, except the changing the mechanism of electric energy-luminous energy, some electric energy can be transformed into heat energy, and then causes the change of many photoelectric characteristics.Fig. 1 shows junction temperature (the junction temperature when light-emitting diode; Tj) while rising to 80 DEG C by 20 DEG C, the curve chart of the photoelectric characteristic of blue light and red light-emitting diode; Wherein, the longitudinal axis shows the relative value in the time that the optical characteristics value of light-emitting device during in each junction temperature and junction temperature are 20 DEG C, and example comprises optical output power (Po as shown in FIG.; Diamond symbols), wavelength shift (Wd; Triangle symbol) and magnitude of voltage (Vf forward; Square symbol); Solid line in figure represents the indicatrix of blue light-emitting diode, and dotted line represents the indicatrix of red light-emitting diode.In the time that junction temperature is increased to 80 DEG C by 20 DEG C, the optical output power of blue light-emitting diode declines approximately 12%, that is its hot cold coefficient (Hot/Cold Factor) is about 0.88; Decline approximately 37% for the optical output power of red light-emitting diode, that is its hot cold coefficient is about 0.63.In addition, aspect the skew of wavelength, blue light and red light-emitting diode there is no too big difference, only change and slight variations with Tj; Aspect the variation of voltage forward, in the time that Tj is increased to 80 DEG C by 20 DEG C, respectively decline approximately 7～8% amplitude of blue light and red light-emitting diode, that is, determining under current practice decline approximately 7～8% amplitude of the equivalent resistance of blue light and red light-emitting diode.In sum, because the interdependency difference of the photoelectric characteristic of ruddiness and blue light-emitting diode to temperature, just can occur from operating initially to arriving the bad phenomenon of red/blue laser output power proportions variation during this section of stable state.When the warm white light emitting device being made up of ruddiness and blue light-emitting diode when light-emitting device is applied on lighting field, also because of ruddiness and and the cold coefficient difference of heat of blue light-emitting diode, make illuminator initial occur that the color of light is unstable when stablizing in lighting, cause the inconvenience in use.
Summary of the invention
Therefore, the present invention relates to light-emitting device in.
Light-emitting device, comprises: one first light-emitting diode group; One second light-emitting diode group, is connected in parallel to the first light-emitting diode group; One temperature compensating element, is connected to the second light-emitting diode group; And one first switch element, be connected between the second light-emitting diode group and temperature compensating element.
For above and other object of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and coordinate accompanying drawing, be described in detail below
Brief description of the drawings
Fig. 1 is the influence curve figure of the photoelectric characteristic of junction temperature to light-emitting device.
Fig. 2 A is the schematic diagram of light-emitting device in the first embodiment of the present invention.
Fig. 2 B is the schematic diagram of light-emitting device in the second embodiment of the present invention.
Fig. 3 is the schematic diagram of light-emitting device in the third embodiment of the present invention.
Fig. 4 is the schematic diagram of light-emitting device in the fourth embodiment of the present invention.
Fig. 5 is the schematic diagram of light-emitting device in the fifth embodiment of the present invention.
Fig. 6 is the schematic diagram of light-emitting device in the sixth embodiment of the present invention.
Fig. 6 A is the schematic diagram of light-emitting device in another embodiment of the present invention.
Fig. 6 B is the schematic diagram of light-emitting device in another embodiment of the present invention.
Fig. 7 is the structural representation of the light-emitting diode group of light-emitting device in above-described embodiment.
Fig. 8 is the structural representation of light-emitting device in the fifth embodiment of the present invention or the 6th embodiment.
Fig. 9 is the schematic diagram of light-emitting device in the seventh embodiment of the present invention.
Figure 10 A～Figure 10 D is the schematic diagram of light-emitting device under different temperatures operation in the seventh embodiment of the present invention.
Figure 11 A～Figure 11 D is the schematic diagram of light-emitting device in the eighth embodiment of the present invention.
Figure 12 A, Figure 12 B are the schematic diagram of light-emitting device in the ninth embodiment of the present invention.
Figure 13 is the schematic diagram of light-emitting device in the tenth embodiment of the present invention.
Figure 14 is the schematic diagram of light-emitting device in the 11st embodiment of the present invention.
[symbol description]
200,400,600,601,602,800,900 light-emitting devices
202,502,802 first light-emitting diode groups
204,503,804 second light-emitting diode groups
206,405,506,605 thermistors
208,408,507,508,808,810,902,904,906 light emitting diodes
206 first resistance
207 second resistance
201 first mechanism's parts
402,700 light-emitting diode groups
501 support plates
504 the 3rd light-emitting diode groups
509 electrodes
510 first light-emitting diode (LED) modules
511 voltage modulated devices
520 second light-emitting diode (LED) modules
607,608 switch elements
609 resistance
711 irrigation canals and ditches
720 N-shaped contact layers
730 N-shaped bond courses
740 active layers
750 p-type bond courses
760 p-type contact layers
770 connect wire
780 insulating barriers
82,82', 82'', 92 temperature compensating elements
821 resistor assemblies
8211,923 resistance
8212,921 marmems
830 switching circuits
831 temperature sensing circuits
832 temperature sensing units
840 current detection circuits
841 current detecting units
9211 contacts
922 power springs
Embodiment
Following examples will be accompanied by brief description of the drawings concept of the present invention, and in accompanying drawing or explanation, similar or identical part is used identical label, and in the accompanying drawings, the shape of element or thickness can expand or dwindle.Need pay special attention to, the element that does not illustrate in figure or describe, can be the form known to those skilled in the art.
Fig. 2 A shows the first embodiment circuit diagram of light-emitting device of the present invention, and light-emitting device 200 comprises one first light-emitting diode group 202, one second light-emitting diode group 204 and a temperature compensating element.Temperature compensating element comprises one first resistance, for example, have the thermistor 206 of positive temperature coefficient.The first light-emitting diode group 202 comprises the light emitting diode 208 that tool first quantity is one another in series, the second light-emitting diode group 204 comprises the light emitting diode 208 that tool second quantity is one another in series, and the first light-emitting diode group 202 electrically connects with the second light-emitting diode group 204; Wherein, light emitting diode 208 in the first light-emitting diode group 202 and the second light-emitting diode group 204 has a hot cold coefficient and is not more than 0.9 or be preferably not more than 0.85 or be more preferably not more than 0.8, and comprise the light-emitting diode that can send wave-length coverage and be positioned at visible ray or invisible light scope, for example comprise the light-emitting diode of ruddiness, blue light or ultraviolet wavelength scope, or be main light-emitting diode by AlGaInP series material or GaN series material.The cold coefficient of heat refers to that light-emitting diode is for example, in the optical output power of one first temperature (: T=80 DEG C) and light-emitting diode for example, in the ratio of the optical output power of one second temperature (: T=20 DEG C).The second temperature is less than the first temperature.Optical output power is decided to be 100(or 1 by standardization and light-emitting diode the optical output power of T=20 DEG C).
In the present embodiment, be electrically in parallel between the second light-emitting diode group 204 and thermistor 206, the first light-emitting diode group 202 has an equivalent built-in resistance value R
1, the second light-emitting diode group 204 has an equivalent built-in resistance value R
2, and thermistor 206 has a resistance value R
pTC, wherein R
1and R
2approximately reduce with temperature rise.As shown in Figure 1, in the time that light emitting diode 208 is ruddiness or blue light-emitting diode, and T rises to 80 DEG C, R by 20 DEG C
1and R
2approximately reduce 7～8% separately.There is the resistance value R of the thermistor 206 of positive temperature coefficient
pTCthere is a relational expression with temperature, that is, in the time of temperature rise, R
pTCcan rise with a linearity or non-linear relation.In the operating period of light-emitting device 200, one approximately between the electric current I of 20～1000 milliamperes (mA)
1, flow through the first light-emitting diode group 202, and split into the electric current I of the second light-emitting diode group 204 that flows through
2and the electric current I of the thermistor 206 of flowing through
3, wherein I
1=I
2+ I
3.In addition, the potential difference of the second light-emitting diode group 204 2 ends equals the potential difference of thermistor 206 2 ends, i.e. I
3* R
pTC=I
2* R
2, therefore, can learn the electric current I of the second light-emitting diode group 204 that flows through from above two relational expressions
2approximately with R
pTC/ (R
2+ R
pTC) be proportionate, i.e. I
2respectively with R
pTCbe proportionate and and R
2be negative correlation.In the present embodiment, in the time of operation, the temperature of light-emitting device 200 can rise.For example: in the time that temperature rises to the stable temperature (the first temperature) of 80 DEG C by the startup operation temperature (the second temperature) of 20 DEG C, the resistance value R of thermistor 206
pTCbecause temperature rise is risen thereupon, and the resistance value R of the second light-emitting diode group 204
2because temperature rise reduces thereupon, therefore, at fixed current (I
1for fixed value) situation under, by the electric current I of the second light-emitting diode group 204
2thereby increase, and the optical output power of the second light-emitting diode group 204 is also with I
2increase and improve.In other words, the optical output power of the second light-emitting diode group 204 can be utilized R
pTCcontrolled, because of the decay that its hot cold coefficient is produced when the temperature rise, reached the function of temperature-compensating with the optical output power that reduces by the second light-emitting diode group 204.In addition, the light emitting diode quantity having by adjusting first and second light-emitting diode group, or select the thermistor of applicable temperature coefficient, also can offset or control its hot cold coefficient of light-emitting device and be subject to the decay of the optical output power that temperature rise causes.It is noted that, temperature can be junction temperature or ambient temperature, and junction temperature equals ambient temperature in the time of stable state.
In one embodiment, the first light-emitting diode group 202 can send blue light and the second light-emitting diode group 204 with 450nm～490nm wavelength and can send the ruddiness with 610nm～650nm wavelength.The light emitting diode 208 that light emitting diode 208 in the first light-emitting diode group 202 comprises in the cold coefficient of heat and the second light-emitting diode group 204 that is greater than 0.85 comprises the cold coefficient of heat that is less than 0.85.
Fig. 2 B shows the second embodiment circuit diagram of light-emitting device of the present invention.The first light-emitting diode group 202 can send blue light and the second light-emitting diode group 204 with 450nm～490nm wavelength can send the ruddiness with 610nm～650nm wavelength.Temperature compensating element comprises one first resistance 206 and one second resistance 207.In the present embodiment, the first resistance 206 and the second light-emitting diode group 204 are connected in parallel.The second resistance 207 and the first resistance 206 are connected in series and are connected in parallel with the second light-emitting diode group 204.In the present embodiment, the first resistance 206, for example thermistor, has one first temperature coefficient of resistance, and the second resistance 207 has one second temperature coefficient of resistance.The absolute value of the first temperature coefficient of resistance is than the absolute value of the second temperature coefficient of resistance more than large ten times.In addition, the first temperature coefficient of resistance and the second temperature coefficient of resistance be all on the occasion of.In one embodiment, the first resistance 206 has one first resistance value and the second resistance 207 has one second resistance value.The first resistance value is less than the second resistance value.According to actual demand, the first resistance value also can be more than or equal to the second resistance value.
It is noted that, light-emitting device 200 has one first colour temperature and has one second colour temperature in the second temperature in the first temperature.The second colour temperature is less than the first colour temperature.When the brightness of light-emitting device 200 is greater than 800 lumen-hours, the difference of the first colour temperature and the second colour temperature is less than 300K.The first colour temperature is greater than the second colour temperature.The difference of the first temperature and the second temperature is greater than 20 DEG C.
As shown in Figure 3, the disclosed thermistor 206 with positive temperature coefficient of the third embodiment of the present invention, can be simultaneously electrically in parallel with the first light-emitting diode group 202 and the second light-emitting diode group 204.Therefore,, when the temperature rise of light-emitting device 300, the electric current by the first light-emitting diode group 202 and the second light-emitting diode group 204 is high during compared with initial temperature.
Fig. 4 shows the 4th embodiment circuit diagram of light-emitting device of the present invention, and light-emitting device 400 comprises a light-emitting diode group 402 and and have the thermistor 405 of negative temperature coefficient.Light-emitting diode group 402 comprises the multiple light emitting diodes 408 that are one another in series, light-emitting diode group 402 comprises the light-emitting diode that can send wave-length coverage and be positioned at visible ray or invisible light scope, for example comprise the light-emitting diode of ruddiness, blue light or ultraviolet wavelength scope, or be main light-emitting diode by AlGaInP series material or GaN series material.
In the present embodiment, between light-emitting diode group 402 and thermistor 405, for electrically to connect, light-emitting diode group 402 has an equivalent built-in resistance value R
1, thermistor 406 has a resistance value R
nTC; Wherein R
1approximately reduce with temperature rise.As shown in Figure 1, in the time that light emitting diode 408 is ruddiness or blue light-emitting diode, T rises to 80 DEG C, R by 20 DEG C
1approximately reduce 7～8%.There is the resistance value R of the thermistor 405 of negative temperature coefficient
nTCthere is a relational expression with temperature, for example, in the time of temperature rise, R
nTCcan decline with a linearity or non-linear relation.Light-emitting device 400 is when surely voltage-operated, at input value V
indetermine under voltage, flow through the electric current I of light-emitting diode group 402
1approximately between 20～1000 milliamperes.According to Ohm's law, electric current I
1be inversely proportional to the all-in resistance of thermistor 405 with light-emitting diode group 402, that is I
1=V
in/ (R
1+ R
nTC).In other words, by the electric current I of light-emitting diode group 402
1with R
nTCand R
1be negative correlation.In the present embodiment, when operation, the temperature of light-emitting device 400 can rise.For example: in the time that temperature rises to the stable temperature (the first temperature) of 80 DEG C by the startup operation temperature (the second temperature) of 20 DEG C, the resistance value R of thermistor 405
nTCand the resistance value R of light-emitting diode group 402
1all decline with temperature rise as aforementioned, therefore, I
1rise thereupon, make the optical output power of light-emitting diode group 402 with I
1rise and improve.In other words, the optical output power of light-emitting diode group 402 can be utilized R
nTCcontrolled, because of the decay that its hot cold coefficient is produced when the temperature rise, reached the function of temperature-compensating with the optical output power that reduces light-emitting diode group 402.In addition, by adjusting the light emitting diode quantity that has of light-emitting diode group 402, and/or select the thermistor of applicable temperature coefficient, also can reduce light-emitting device and decayed by the optical output power that temperature rise causes because of its hot cold coefficient.
Fig. 5 is the 5th embodiment circuit diagram that shows light-emitting device 500 of the present invention.Light-emitting device 500 comprise one first light emitting module 510, one and first the second light emitting module 520 of being connected in parallel of light emitting module 510 and one and second light emitting module 520 be electrically connected and have the thermistor 506 of positive temperature coefficient.The first light emitting module 510 comprises one first light-emitting diode group 502, the second light emitting modules 520 and comprises one second light-emitting diode group 503 and one the 3rd light-emitting diode group 504.The first light-emitting diode group 502 comprises the first light emitting diode 507 that tool first quantity is one another in series, the second light-emitting diode group 503 comprises the second light emitting diode 508, the three light-emitting diode groups 504 that tool second quantity is one another in series and comprises the second light emitting diode 508 that a tool the 3rd quantity is one another in series; Wherein, thermistor 506 is electrically in parallel with the 3rd light-emitting diode group 504, and electrically connects with the second light-emitting diode group 503.The first light emitting module 510 or the first light emitting diode 507 have a hot cold coefficient and are approximately greater than 0.85; The second light emitting module 520 or the second light emitting diode 508 have a hot cold coefficient and are less than the first light emitting module 510 or the first light emitting diode 507, and for example hot cold coefficient is less than 0.85, or is preferably less than 0.8.In the present embodiment, the first light emitting diode 507 comprises hot cold coefficient and is about 0.88 and can send the blue light-emitting diode with 450nm～490nm wavelength; The second light emitting diode 508 comprises hot cold coefficient and is about 0.63 and can send the red light-emitting diode with 610nm～650nm wavelength, but not as limit, also can comprise other and can send the light-emitting diode of visible wavelength or invisible light wave-length coverage, the for example light-emitting diode of green glow, gold-tinted or ultraviolet wavelength scope, or be main light-emitting diode by AlGaInP series material or GaN series material.
In the present embodiment, be electrically in parallel between the 3rd light-emitting diode group 504 and thermistor 506, the second light-emitting diode group 503 has an equivalent built-in resistance value R
1, the 3rd light-emitting diode group 504 has an equivalent built-in resistance value R
2, thermistor 506 has a resistance value R
pTC, wherein R
1and R
2approximately reduce with temperature rise.As shown in Figure 1, in the time that the second light emitting diode is ruddiness or blue light-emitting diode, R
1and R
2approximately reduce 7～8% separately; And there are thermistor 506 its resistance value R of positive temperature coefficient
pTCthere is a relational expression with temperature, for example, in the time of temperature rise, R
pTCcan rise with a linearity or non-linear relation.In the operating period of light-emitting device 500, an electric current I
0split into the I that flows through the first light emitting module 510
1and flow through the I of the second light emitting module 520
2.Through the 3rd light-emitting diode group 504 of the second light emitting module 520 during with thermistor 506, I
2split into the I of the 3rd light-emitting diode group 504 that flows through
3and the I of the thermistor 506 of flowing through
4, wherein I
2=I
3+ I
4.Again, the potential difference of the 3rd light-emitting diode group 504 2 ends equals the potential difference of thermistor 506 2 ends, i.e. I
4* R
pTC=I
3* R
2.Therefore, can learn the electric current I of the 3rd light-emitting diode group 504 that flows through from above two relational expressions
3with R
pTC/ (R
2+ R
pTC) be proportionate, i.e. I
3respectively with R
pTCbe proportionate, and and R
2be negative correlation.In the present embodiment, in the time of operation, the temperature of light-emitting device 500 can rise, for example: in the time that temperature rises to the stable temperature (the first temperature) of 80 DEG C by the startup operation temperature (the second temperature) of 20 DEG C, the resistance value R of thermistor 506
pTCbecause temperature rise is risen thereupon, and the resistance value R of the 3rd light-emitting diode group 504
2because temperature rise reduces thereupon, therefore, I
3rise with temperature rise, make the optical output power of the 3rd light-emitting diode group 504 with I
3rise and improve.In the present embodiment, because the cold coefficient of the heat of the first light emitting module 510 is large compared with the second light emitting module 520, therefore the amplitude that the optical output power of the second light emitting module 520 fails with temperature rise is greater than the first light emitting module 510, causes the photochromic photochromic skew toward the first light emitting module 510 with temperature rise that mixes that the first light emitting module 510 sends with the second light emitting module 520.But by the R that controls thermistor 506
pTC, the optical output power that can reduce by the second light emitting module 520, because of the decay that its hot cold coefficient produces when the temperature rise, reaches the function of temperature-compensating.In addition, the light emitting diode quantity having by adjusting second and third light-emitting diode group, or select the thermistor of applicable temperature coefficient, also can offset or control the second light emitting module and be subject to the decay of the optical output power that temperature rise causes because of its hot cold coefficient.Moreover, in the present embodiment, disclosed thermistor 506 can be simultaneously electrically in parallel with the second light-emitting diode group 503 and the 3rd light-emitting diode group 504, therefore, in the time that the temperature of light-emitting device raises, the electric current by the second light-emitting diode group 503 and the 3rd light-emitting diode group 504 be height during compared with initial temperature.
The of the present invention the 6th light-emitting device 600 of implementing as shown in Figure 6.The difference of the 6th embodiment and the 5th embodiment is that the thermistor 605 that the second light emitting module 520 and has a negative temperature coefficient is connected in series, and based on being similar to the 4th embodiment and the 5th embodiment, reaches temperature-compensating function of the present invention.In addition, the first light emitting module and the second light emitting module of the aforementioned the 5th and the 6th embodiment are not limited to be connected in parallel, and also can be connected to separately independent current source or a voltage source of controlling, and still belong to a part of the present invention.
Fig. 6 A is another embodiment circuit diagram that shows light-emitting device 601 of the present invention.Light-emitting device 601 comprises one first light emitting module 510, one second light emitting module 520, a thermistor 605(temperature compensating element) and a switch element 607.In the present embodiment, the first light emitting module 510 comprises one first light-emitting diode group 502, the second light emitting modules 520 and comprises one second light-emitting diode group 504.The first light emitting diode 502 can send that to have a crest wavelength be the blue light of 450nm～490nm wavelength; The second light emitting diode can send that to have a crest wavelength be the ruddiness of 610nm～650nm wavelength.The cold coefficient of heat of the second light emitting module 520 is less than the cold coefficient of heat of the first light emitting module 510.In other words, the temperature coefficient of the second light emitting module 520 is greater than the temperature coefficient (the second light emitting module 520 light output efficiencies are subject to the impact of temperature to be greater than the first light emitting module 510) of the first light emitting module 510.The first light emitting module 510 and the second light emitting module 520 are connected in parallel.The second light emitting module 520 is connected to thermistor 605.Thermistor 605 is one to have the resistance (R_NTC) of negative temperature coefficient.Switch element 607 is connected electrically between the second light emitting module 520 and thermistor 605.In this embodiment, switch element 607 is a two-carrier junction transistor (BJT), therefore, and the electric current (I of the second light-emitting diode group 504 that flows through
c) electric current (I of the thermistor 605 that equals in fact to flow through
e).In detail, three nodes of two-carrier junction transistor tool (node): emitter-base bandgap grading (emitter, node E), collector (collector, node C) and base stage (base, Node B).Node C is connected to the second light-emitting diode group 504 and node E is connected to thermistor 605.One voltage modulated device 511 is connected between node M and node N.The voltage of node M equals the voltage of Node B.Should be noted, put on the voltage (V between node M and the node N of voltage modulated device 511
mN) equal the voltage (V between Node B and node N
bN).Voltage (V between Node B and node N
bN) comprise the junction voltage (V between Node B and node E
bE) and stride across the voltage (V of thermistor 605
r_NTC), therefore, V
mN=V
bE+ V
r_NTC.For example: the diode that voltage modulated device 511 comprises two silica-based materials, therefore V
mN=1.4V, and in the time that two-carrier junction transistor is a silicon transistor, junction voltage V
bE=0.7V; Be V
r_NTC=1.4V-0.7V=0.7V.According to Ohm's law V
r_NTC=I
e* R_NTC, electric current I
ecan be by V
r_NTCand R_NTC adjusts or determines.Similarly, because I
c≒ I
e, the electric current (I of the second light-emitting diode group 504 that flows through
c) also can be by V
r_NTCand R_NTC determines.In another embodiment, switch element 607 can comprise power two-carrier junction transistor, two-carrier junction transistor, heterojunction double carrier transistor, Metal-oxide-semicondutor field-effect transistor, power metal-oxide-semiconductcor field effect transistor, High Electron Mobility Transistor (HEMT), thyristor (SCR), igbt (IGBT) or and combination.
For example, with reference to figure 6A: light-emitting device 601 operates under certain voltage.Light-emitting device 601 is in the operating period of 20 DEG C of temperature, the electric current I of the first light-emitting diode group 502 that flows through
1 (20 DEG C)at fixing input voltage V
inbe about 20～1000 milliamperes (mA), and the electric current I of flow through the second light-emitting diode group 504 and thermistor 605
c (20 DEG C)(≒ I
e (20 DEG C)) at fixing input voltage V
inbe about 20～1000 milliamperes (mA).Because the second light-emitting diode group 504 is connected in series with switch element 607 and thermistor 605, fixing input voltage V
inbe the forward voltage (V of the second light-emitting diode group 504
lED), the voltage (V of node C and node E
cE) and thermistor 605 voltage (V
r_NTC) summation, i.e. V
in=V
lED+ V
cE+ V
r_NTC.
It should be noted that because thermistor 605 is one to have the resistance (R_NTC) of negative temperature coefficient, the resistance value R of thermistor
nTCcan reduce along with temperature rise.Although the voltage of voltage modulated device 511 also can reduce along with temperature rise, so its variability is much smaller than thermistor 605.Therefore, at 80 DEG C of temperature, thermistor 605 net currents of flowing through increase, and the electric current of the thermistor 605 of flowing through is large 20 DEG C of temperature at 80 DEG C of ratios of temperature.More person, because the electric current (I of the second light-emitting diode group 504 that flows through
c) equal in fact electric current (I
e), electric current (I
c) also and then increase, that is the electric current of the second light-emitting diode group 504 that flows through is large 20 DEG C of temperature at 80 DEG C of ratios of temperature.By this, the optical output power of the second light-emitting diode group 504 can be slowed down because of the decay that the cold coefficient of its less heat (or larger temperature coefficient) produces when the temperature rise, and then makes the relative stable state ratio between the ruddiness optical output power of the second light-emitting diode group 504 and the blue light optical output power of the first light-emitting diode group 502 under different temperatures, maintain certain value.Therefore, under different temperatures, light-emitting device 601 still has a stable colour temperature.
In the present embodiment, the function of switch element 607 regulates (regulate) flow through electric current of the second light-emitting diode group 504 during operation.,, in the time of voltage deviation one preset range, electric current still can be controlled in a preset range.Particularly, in manufacture process, the forward voltage (V of the second light-emitting diode group 504
lED) perhaps with preset value deviation to some extent.But, due to the existence of switch element 607, can apply an offset voltage (off voltage) on switch element 607.Therefore, do not need for example individually to adjust thermistor 605(because of light-emitting diode group forward voltage differences to each other: there are different forward two light-emitting diode groups of voltage and can be connected to individually identical thermistor), and maintain same current value by switch element 607 can make the to flow through operating current of light-emitting diode group.In addition, when temperature rises to 80 DEG C from 20 DEG C, because the forward voltage (V of the second light-emitting diode group 504
lED) can reduce extra voltage variation (the Δ V=V of the second light-emitting diode group 504
lED (20 DEG C)-VLED
(80 DEG C)) also can put on switch element 607, and do not affect the voltage that strides across thermistor 605.Furthermore, because of Circnit Layout for this reason, the electric current (I of the second light-emitting diode group 504 that flows through
c) mainly determined by voltage modulated device 511, therefore, by switch element 607, under different temperatures, electric current still can remain on a predetermined value.Fig. 6 B shows another embodiment circuit diagram of light-emitting device 602 of the present invention.Light-emitting device 602 has the circuit diagram of a similar light-emitting device 601.One switch element 608 and a resistance 609 are electrically connected to the first light-emitting diode group 502.Switch element 608 is placed between the first light-emitting diode group 502 and resistance 609.Similarly, due to this Circnit Layout, the electric current of the electric current of the first light-emitting diode group 502 that flows through and the second light-emitting diode group 504 that flows through is mainly determined by voltage modulated device 511.In addition, by switch element 608, as the forward voltage (V of the first light-emitting diode group 502
lED) while reducing along with temperature rise, the first light-emitting diode group 502 is extra voltage variation (the Δ V=V of voltage forward
lED (20 DEG C)-VLED
(80 DEG C)) also can put on switch element 608, and electric current still maintains a predetermined value.Switch element 608 comprises power two-carrier junction transistor, two-carrier junction transistor, heterojunction double carrier transistor, Metal-oxide-semicondutor field-effect transistor, power metal-oxide-semiconductcor field effect transistor, High Electron Mobility Transistor (HEMT), thyristor (SCR), igbt (IGBT) or and combination.Thermistor 605 has one first temperature coefficient of resistance and resistance 609 has one second temperature coefficient of resistance; The absolute value of the first temperature coefficient of resistance is than the absolute value of the second temperature coefficient of resistance more than large ten times.
Fig. 7 shows the structural representation of the light-emitting diode group that the aforementioned each embodiment of the present invention discloses.Light-emitting diode group 700 comprises that a substrate 710 and multiple light emitting diode jointly grow up or are engaged on substrate 710 with an array form, and separates with irrigation canals and ditches 711.Each multiple light emitting diode comprises that a N-shaped contact layer 720 is formed on substrate 710, one N-shaped bond course (cladding layer) 730 is formed on contact layer 720, one active layer (active layer) 740 is formed on N-shaped bond course 730, one p-type bond course 750 is formed on active layer 740, one p-type contact layer 760 is formed on p-type bond course 750, one connect N-shaped contact layer 720 that wire 770 is electrically connected each light emitting diode to the p-type contact layer 760 of another light emitting diode to form a cascaded structure, and one insulating barrier 780 be formed at irrigation canals and ditches 711 and be connected between wire 770, to prevent from not keeping away the short circuit paths of wanting.N-shaped bond course 730 and p-type bond course 750 provide respectively electronics and electric hole, make electronics, electric hole in active layer 740 in conjunction with luminous.Contact layer provides an ohmic contact interface between an electrode and bond course.In one embodiment of the invention, light-emitting diode group 700 comprises multiple light emitting diodes and is jointly formed at the array high voltage single-chip of single substrate, for example for send blue light and operating voltage the blue light array high voltage single-chip of 60～120V or send ruddiness and operating voltage at the ruddiness array high voltage single-chip of 30～50V.Operating voltage depends on the quantity of the light emitting diode of series connection.Wherein, the material of described N-shaped or p-type contact layer, N-shaped or p-type bond course or active layer comprises III-V compounds of group, for example, comprise Al
xin
yga
(1-x-y)n or Al
xin
yga
(1-x-y)p, wherein, 0≤x, y≤1; (x+y)≤1.
Fig. 8 is the structural representation of light-emitting device of the present invention the 5th or the 6th embodiment, wherein the first light emitting module 510 of light-emitting device 500 or 600 comprises the blue light array high voltage single-chip disclosing as Fig. 7, and the second light emitting module 520 comprises the ruddiness array high voltage single-chip disclosing as Fig. 7 and is electrically connected at a thermistor 506 or 605; Two electrodes 509 are electrically connected to the first light emitting module 510 and the second light emitting module 520 and in order to receive a power supply signal; Wherein, the first light emitting module 510, the second light emitting module 520, temperature compensating element (thermistor 506,605) and electrode 509 are formed on a support plate 501 jointly.
Fig. 9 is the 7th embodiment circuit diagram that shows light-emitting device 800 of the present invention.Light-emitting device 800 comprises one first light-emitting diode group 802 and one second light-emitting diode group 804.The first light-emitting diode group 802 comprises the first light emitting diode 808 that tool first quantity is one another in series, the second light-emitting diode group 804 comprises the second light emitting diode 810, the first light-emitting diode groups 802 that tool second quantity is one another in series and is one another in series and is connected with the second light-emitting diode group 804.Light emitting diode 808,810 comprises the light-emitting diode that can send wave-length coverage and be positioned at visible ray or invisible light scope, for example comprise the light-emitting diode of ruddiness, blue light or ultraviolet wavelength scope, or be main light-emitting diode by AlGaInP series material or GaN series material.In this embodiment, the first light-emitting diode group 802 can send blue light and the second light-emitting diode group 804 with 450nm～490nm wavelength and can send the ruddiness with 610nm～650nm wavelength.Light-emitting device 800 also comprises a temperature compensating element 82 and is connected in parallel to the second light-emitting diode group 804.Temperature compensating element 82 can be an electronic operation form or a mechanically actuated operation form.In the present embodiment, temperature compensating element 82 is mechanically actuated operation form and comprises multiple resistor assemblies 821.Each resistor assembly 821 comprises a resistance 8211 and a mechanical switch 8212.Switch 8212 comprises micro-actuator, unidirectional or two-way shape memory alloys (one-way or two way-shaped memory alloy), bimetal leaf (bi-metallic strip) or capillary temperature detect switch (TDS) (capillary thermostat switch).Resistance 8211 in each resistor assembly 821 has identical resistance value.In another embodiment, the resistance 8211 in each resistor assembly 821 can have according to actual demand different resistance values.The number of resistor assembly 821 also can change.Switch can leave according to design the control of (disconnected) or pass (connected) along with temperature.
In the present embodiment, switch 8212 is a two-way shape memory alloys, and the shape of marmem can the deformation along with temperature change.In a first stage, with reference to Figure 10 A, light-emitting device 800 is the operating period of 20 DEG C, and marmem 8212 is connected to resistance 8211, make resistance 8211(in the present embodiment, taking three resistance as example) be connected in parallel to the second light-emitting diode group 804.Therefore, the flow through electric current I of 20～1000 milliamperes of the first light-emitting diode group 802
11split into the electric current I of the second light-emitting diode group 804 that flows through
21and the electric current I of the temperature compensating element 82 of flowing through
31; Wherein, I
11=I
21+ I
31.In a second stage, with reference to Figure 10 B, temperature is 40 DEG C, the wherein shape deformation of a marmem 8212 and make a resistance 8211 not be connected to the second light-emitting diode group 804, therefore the all-in resistance of resistor assembly 821 increases (that is the resistance of temperature compensating element increases) and flows through the electric current I of temperature compensating element 82
32(<I
31) diminish.The electric current I of the first light-emitting diode group 802 because flow through
12(=I
11=I
22+ I
32) fix, when the resistance of temperature compensating element 82 increases, the electric current I of the second light-emitting diode group 804 that flows through
22(>I
21) therefore increase.Similarly, in a phase III, with reference to Figure 10 C, temperature is 60 DEG C, the also deformation and make two resistance 8211 not be connected to the first light-emitting diode group 804 of the shape of another marmem 8212, therefore compared to Figure 10 B, the all-in resistance of resistor assembly 821 increases (that is the resistance of temperature compensating element also increases), and flows through the electric current I of temperature compensating element 82
33(<I
32) diminish.The flow through electric current I of the second light-emitting diode group 804
23(>I
22) therefore increase.In a fourth stage, with reference to Figure 10 D, temperature is 80 DEG C, all deformation and make all resistance 8211 not be connected to the second light-emitting diode group 804 of the shape of three marmems 8212, the electric current I of the first light-emitting diode group 802 that therefore flows through
14(=I
11=I
12=I
13) do not shunted and this electric current second 804(I of light-emitting diode group that also flows through
24>I
23).By being connected between off resistance assembly 821 and the second light-emitting diode group 804, the all-in resistance of resistor assembly 821 can increase (resistance that is temperature compensating element increases) thereupon, and in the time that the electric current of flow through temperature compensating element 82 and the second light-emitting diode group 804 that flows through is fixed value, the increase of resistor assembly 821 all-in resistances can make to flow through, and the electric current of temperature compensating element 82 reduces and the electric current of the second light-emitting diode group 804 that flows through increases.Therefore, the resistance of temperature controllable compensating element,, because of the decay that its hot cold coefficient is produced when the temperature rise, reaches the function of temperature-compensating with the optical output power that reduces by the second light-emitting diode group 804.Should be noted, when the resistance value of each resistor assembly is while being identical, between first stage and second stage, the first difference of resistance value is less than second stage and the second difference of resistance value between the phase III.The second difference is less than the 3rd difference of resistance value between phase III and fourth stage.In one embodiment, the resistance value of each resistor assembly can be difference.
Figure 11 A～Figure 11 C is for showing light-emitting device of the present invention the 8th embodiment circuit diagram.As shown in Figure 11 A, temperature compensating element 82' is connected in parallel to the second light-emitting diode group 804.Temperature compensating element 82' comprises first resistance 8214, one with one first resistance value and has the second resistance 8215 and a switch 8212 of one second resistance value.The second resistance value is less than the first resistance value.The first resistance value is at least larger more than two times than the second resistance value.Switch 8212 is a marmem.The operating period of 20 DEG C, as shown in Figure 11 B, switch 8212 is connected to the second resistance 8215 and is not connected to the first resistance 8214.The flow through electric current I of the first light-emitting diode group 802
15split into the electric current I of the second light-emitting diode group 804 that flows through
25and the electric current I of second resistance 8215 of flowing through
35; Wherein, I
15=I
25+ I
35.In the time of temperature 50 C, as shown in Figure 11 C, the alteration of form of switch 8212 thereby disconnect the resistance value that is greater than the second resistance with the resistance value that is connected and is connected to the first resistance 8214, the first resistance of the second resistance 8215.The electric current I of the first light-emitting diode group 802 because flow through
16(=I
15=I
26+ I
36) fix, when the resistance of temperature compensating element 82' increases, the electric current I of the temperature compensating element 82' that flows through
36(<I
35) can reduce, and then the electric current I of the second light-emitting diode group 804 that makes to flow through
26(>I
25) increase.In the time of 80 DEG C of temperature, as shown in Figure 11 D, the alteration of form of switch 8212 and not all being connected with the first resistance 8214 and the second resistance 8215, by this, the electric current I of the first light-emitting diode group 802 that flows through
17do not shunted and this electric current second 804(I of light-emitting diode group that also flows through
27>I
26).Therefore, the resistance of temperature controllable compensating element, 82', because of the decay that its hot cold coefficient is produced when the temperature rise, reaches the function of temperature-compensating with the optical output power that reduces by the second light-emitting diode group 804.
Figure 12 A and Figure 12 B are for showing light-emitting device of the present invention the 9th embodiment circuit diagram.As shown in Figure 12 A, temperature compensating element 92 comprises an one-way shape memory alloy 921, a power spring 922 and a resistance 923.In the time of 20 DEG C of temperature, marmem 921 has an end points and is fixed on an end points of power spring 922, and this end points of marmem 921 forms and is connected at a contact 9211 with the second light-emitting diode group 804.Power spring 922 has another end points and is connected with resistance 923, and therefore resistance 923 and the second light-emitting diode group 804 are connected in parallel.The flow through electric current I of the first light-emitting diode group 802
18split into the electric current I of the second light-emitting diode group 804 that flows through
28and the electric current I of the resistance 923 of flowing through
38.In the time of 80 DEG C of temperature (or 40 DEG C or 60 DEG C), marmem 921 can change shapes and stress on power spring 922, disconnects by this being connected between power spring 922 and resistance 923, as shown in Figure 12 B.Therefore, the flow through electric current I of the first light-emitting diode group 802
19do not shunted and this electric current second light-emitting diode group 804 that also flows through.Then, in the time that temperature is reduced to 20 DEG C from 80 DEG C, the spring force (restoring force) being present in power spring 922 is released and forces marmem 921 to be connected to the second light-emitting diode group 804, thereby again makes resistance 923 and the second light-emitting diode group 804 be connected in parallel.
Figure 13 shows light-emitting device of the present invention the tenth embodiment circuit diagram.Temperature compensating element 82'' is an electronic operation form and comprises a temperature sensing unit 832, a temperature sensing circuit 831, a switching circuit 830 and multiple resistance 834.Switching circuit 830 comprises two-carrier junction transistor, power two-carrier junction transistor, heterojunction double carrier transistor, Metal-oxide-semicondutor field-effect transistor, power metal-oxide-semiconductcor field effect transistor, High Electron Mobility Transistor (HEMT), thyristor (SCR), igbt (IGBT) or and combination.Temperature sensing circuit 831 and switching circuit 830 can be integrated into an integrated circuit.When operation, temperature sensing unit 832 sensing one temperature also transmit a signal to temperature sensing circuit 831.Afterwards, the signal of temperature sensing circuit 831 based on from temperature sensing unit 832 connects resistance 834 with control switch circuit 830 or do not connect the second light-emitting diode group 804.Similar Fig. 9～Figure 10 D the 7th embodiment that is presented at, in the time of 20 DEG C of temperature, all resistance 834 is all connected in parallel with the second light-emitting diode group 804.In the time of 40 DEG C of temperature, one of them resistance is not connected with the second light-emitting diode group 804.In the time of temperature 60 C, two resistance are not connected with the second light-emitting diode group 804.In the time of 80 DEG C of temperature, all resistance is not all connected with the second light-emitting diode group 804.
Figure 14 shows light-emitting device 900 the 11 embodiment circuit diagram of the present invention.Light-emitting device 900 comprises one first light-emitting diode group 902 and one second light-emitting diode group 904.The first light-emitting diode group 902 comprises the light emitting diode 908 that tool first quantity is one another in series, the second light-emitting diode group 904 comprises the light emitting diode 908 that tool second quantity is one another in series, and the first light-emitting diode group 902 electrically connects with the second light-emitting diode group 904.Light-emitting device 900 has the similar structure of light-emitting device with the tenth embodiment.It is electrically in parallel with the second light-emitting diode group 904 that light-emitting device 900 also comprises a light emitting diode 906.Light emitting diode 906,908,910 comprises the light-emitting diode that can send wave-length coverage and be positioned at visible ray or invisible light scope, for example comprise the light-emitting diode of ruddiness, blue light or ultraviolet wavelength scope, or be main light-emitting diode by AlGaInP series material or GaN series material.Light-emitting device 900 comprises temperature compensating element 82'', a current detecting unit 841 and a current detection circuit 840.Current detecting unit detects the electric current of the second light-emitting diode group 904 that flows through and transmits a signal to current detection circuit 840.Afterwards, whether the current signal of current detection circuit 840 based on from current detecting unit 841 be luminous to control light emitting diode 906.In the present embodiment, light emitting diode 906,910 glows and light emitting diode 908 blue light-emittings.In the time that electric current is less than 3mA, the decay of the light output efficiency of red light-emitting diode is greater than the decay of the light output efficiency of blue light-emitting diode.Therefore,, in the time that current detecting unit 841 detects that the electric current of the second light-emitting diode group 904 that flows through is less than 3mA, can be sent to current detection circuit 840 to control and to make light emitting diode 906 luminous from the signal of current detecting unit 841.In this embodiment, temperature compensating element 82'' current detection circuit 840 can be integrated into an integrated circuit.
Need be appreciated that, in the present invention, the above embodiments in appropriate circumstances, are to combine mutually or to replace, but not only limit to described specific embodiment.The cited each embodiment of the present invention is only in order to the present invention to be described, not in order to limit the scope of the invention.Those skilled in the art's any apparent modification made for the present invention or change connect and do not depart from spirit of the present invention and scope.
Claims (10)
1. a light-emitting device, comprises:
One first light-emitting diode group;
One second light-emitting diode group, is connected in parallel to this first light-emitting diode group;
One temperature compensating element, is connected to this second light-emitting diode group; And
One first switch element, is connected to this second light-emitting diode group and this temperature compensating element.
2. light-emitting device as claimed in claim 1, wherein, this temperature compensating element comprises a thermistor with negative temperature coefficient.
3. light-emitting device as claimed in claim 1, wherein, this the first light-emitting diode group is configured to send to be had light that a crest value is 450nm～490nm and this second light-emitting diode group and is configured to send and has the light that a crest value is 600nm～650nm, or this second light-emitting diode group has a cold coefficient of heat that is less than this first light-emitting diode group.
4. light-emitting device as claimed in claim 1, also comprises a voltage modulated device, is electrically connected to this temperature compensating element and this first switch element.
5. light-emitting device as claimed in claim 1, also comprises a support plate, and wherein this first light-emitting diode group, this second light-emitting diode group and this temperature compensating element are formed on this support plate.
6. light-emitting device as claimed in claim 1, also comprises a resistance and is electrically connected to this first light-emitting diode group, and wherein, this temperature compensating element has one first temperature coefficient of resistance and this resistance has one second temperature coefficient of resistance; The absolute value of this first temperature coefficient of resistance is than the absolute value of this second temperature coefficient of resistance more than large ten times.
7. light-emitting device as claimed in claim 1, also comprises a resistance, a second switch element and a voltage modulated device, and wherein this voltage modulated device is electrically connected to this resistance and this second switch element.
8. light-emitting device as claimed in claim 1, wherein, this light-emitting device operates in certain voltage.
9. light-emitting device as claimed in claim 1, wherein, an electric current of flowing through this second light-emitting diode group equals in fact an electric current of flowing through this temperature compensating element.
10. light-emitting device as claimed in claim 1, wherein, one first voltage puts on this first switch element and a second voltage puts on this first switch element in one second temperature in one first temperature, and wherein, this first temperature is greater than this second temperature and this first voltage is greater than this second voltage.
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| CN201910164450.7A CN110072315B (en) | 2013-02-05 | 2014-01-30 | Light emitting device with temperature compensation element |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/759,735 | 2013-02-05 | ||
| US13/759,735 US20130140590A1 (en) | 2010-07-28 | 2013-02-05 | Light-emitting device with temperature compensation |
| US13/957,139 | 2013-08-01 | ||
| US13/957,139 US9913338B2 (en) | 2010-07-28 | 2013-08-01 | Light-emitting device with temperature compensation |
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| CN201910164450.7A Division CN110072315B (en) | 2013-02-05 | 2014-01-30 | Light emitting device with temperature compensation element |
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Cited By (2)
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| CN106444958A (en) * | 2015-08-07 | 2017-02-22 | 日本电气太空技术株式会社 | Temperature-compensated voltage divider circuit |
| CN108877642A (en) * | 2017-05-12 | 2018-11-23 | 京东方科技集团股份有限公司 | Luminescence component, display base plate and display device |
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| CN110767618B (en) * | 2019-11-01 | 2021-07-13 | 芜湖市智行天下工业设计有限公司 | Heat dissipation and protection architecture to power module |
| CN115411204A (en) * | 2021-05-27 | 2022-11-29 | 京东方科技集团股份有限公司 | Display device and display substrate |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN110072315A (en) | 2019-07-30 |
| TWI605730B (en) | 2017-11-11 |
| CN110072315B (en) | 2022-04-12 |
| TW201433208A (en) | 2014-08-16 |
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